US20110073929A1

US20110073929A1 - High coupling memory cell

Info

Publication number: US20110073929A1
Application number: US12/962,012
Authority: US
Inventors: Sukesh Sandhu; Gurtej S. Sandhu
Original assignee: Micron Technology Inc
Current assignee: Micron Technology Inc
Priority date: 2004-07-27
Filing date: 2010-12-07
Publication date: 2011-03-31
Also published as: US20060211201A1; US20060258095A1; US7749837B2; US20060024885A1; US7396720B2

Abstract

A first dielectric layer is formed over a substrate. A single layer first conductive layer that acts as a floating gate is formed over the first dielectric layer. A trough is formed in the first conductive layer to increase the capacitive coupling of the floating gate with a control gate. An intergate dielectric layer is formed over the floating gate layer. A second conductive layer is formed over the second dielectric layer to act as a control gate.

Description

RELATED APPLICATION

This Application is a Divisional of U.S. application Ser. No. 11/440,351, Titled “HIGH COUPLING MEMORY CELL,” filed May 24, 2006 (pending) which is a Continuation of U.S. application Ser. No. 10/899,913, filed Jul. 27, 2004, now U.S. Pat. No. 7,396,720 issued on Jul. 8, 2008, which are commonly assigned and incorporated herein by reference.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to memory devices and in particular the present invention relates to non-volatile memory devices.

BACKGROUND OF THE INVENTION

Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic devices. There are many different types of memory including random-access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), and flash memory.
Flash memory devices have developed into a popular source of non-volatile memory for a wide range of electronic applications. Flash memory devices typically use a one-transistor memory cell that allows for high memory densities, high reliability, and low power consumption. Common uses for flash memory include personal computers, personal digital assistants (PDAs), digital cameras, and cellular telephones. Program code and system data such as a basic input/output system (BIOS) are typically stored in flash memory devices for use in personal computer systems.
The performance and density of flash memory devices need to improve as the performance of computer systems increase. For example, a flash memory transistor that can be programmed faster with greater reliability could increase system performance. One way to increase performance and increase memory density is to reduce the size of the memory cell.
One problem, however, with decreasing cell component dimensions is that the surface area of the cell's floating gate also decreases. This leads to a decrease in the capacitance of the effective capacitor formed between the floating gate layer and the control gate layer. The decrease in effective capacitance results in a reduction of the capacitive coupling ratio. The poorly coupled voltage to floating gate limits the programming and accessing speed characteristics of the memory device.
For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for a way to decrease memory cell dimensions without degrading cell performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of one embodiment of one or more steps in fabricating the high coupling memory cell of the present invention.

FIG. 2 shows a cross-sectional view of one embodiment of one or more steps in fabricating the high coupling memory cell of the present invention.

FIG. 3 shows a cross-sectional view of one embodiment of one or more steps in fabricating the high coupling memory cell of the present invention.

FIG. 4 shows a cross-sectional view of one embodiment of one or more steps in fabricating the high coupling memory cell of the present invention.

FIG. 5 shows a cross-sectional view of one embodiment of one or more steps in fabricating the high coupling memory cell of the present invention.

FIG. 6 shows a cross-sectional view of one embodiment of one or more steps in fabricating the high coupling memory cell of the present invention.

FIG. 7 shows a cross-sectional view of another embodiment of a high coupling memory cell of the present invention.

FIG. 8 shows a block diagram for one embodiment of an electronic system of the present invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference is made to the accompanying drawings that form a part hereof and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. In the drawings, like numerals describe substantially similar components throughout the several views. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and equivalents thereof. The term wafer or substrate used in the following description includes any base semiconductor structure. Both are to be understood as including silicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI) technology, thin film transistor (TFT) technology, doped and undoped semiconductors, epitaxial layers of a silicon supported by a base semiconductor structure, as well as other semiconductor structures well known to one skilled in the art. Furthermore, when reference is made to a wafer or substrate in the following description, previous process steps may have been utilized to form regions/junctions in the base semiconductor structure, and terms wafer or substrate include the underlying layers containing such regions/junctions. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and equivalents thereof.
FIG. 1 illustrates a cross-sectional view of one embodiment for fabrication of high coupling memory cells of the present invention. In this figure, a sacrificial pad oxide layer 102 is formed over a semiconductor substrate 100. In one embodiment, the pad oxide layer 102 is a silicon oxide material that may be formed by thermal oxidation, low pressure chemical vapor deposition (LPCVD), or some other process. A mask layer 104 is formed over the pad oxide layer 102. In one embodiment, this layer 104 is a silicon nitride mask that can be formed by reacting dichlorosilane with ammonia through an LPCVD process. Alternate embodiments can use other mask materials formed by alternate processes.
Shallow trench isolation (STI), in one embodiment, separates the active areas 210-212 of the cells with trenches 200 and 202. The mask layer 104 provides for a raised, insulator filler in the trenches. In one embodiment, the trenches 200 and 202 are filled with an oxide dielectric material. The trenches 200 and 202 may be filled using high-density plasma deposition, LPCVD, or some other method. Excess oxide outside the trenches 200 and 202 can be removed by an etch back or chemical mechanical polishing (CMP) process, using the mask layer 104 as a polishing stop layer.
The sacrificial nitride mask 104 is removed in FIG. 3 to expose the pad oxide 102 and protruding oxide isolation areas 200 and 202. The sacrificial pad oxide 102 can then go through an isotropic oxide strip process to remove pad oxide material.
The isotropic oxide strip process also widens the area by narrowing the upper portions of the protruding oxide isolation areas 200 and 202 to form the shapes illustrated. This widens the area for the subsequent floating gate layer 400. In one embodiment, each side of the upper portions of the protruding oxide isolation areas 200 and 202 take on a substantially concave shape after the isotropic oxide strip process.
A gate oxide layer 105 is then formed over the substrate 100 as illustrated in FIG. 4. This layer 105 may also be referred to as the tunnel dielectric layer 105.
The floating gate 400 is a conductive layer that is formed on the tunnel dielectric layer 105, as illustrated in FIG. 4. The floating gate 400 may be formed as one or more layers of doped polysilicon. In one embodiment, the floating gate 400 is a single layer of insitu doped polysilicon or other conductive material. The floating gate 400 may be formed by a deposition process such that stops at the tops of the upper portions of the oxide isolation areas 200 and 202. In one embodiment, an LPCVD method employing silane as the silicon source material can be used to deposit the floating gate 400. A CMP process is used on the floating gate layer 400 to planerize. Alternate embodiments may use other processes. The single layer process provides less steps in the fabrication process in order to save fabrication time and also requires fewer consumables to fabricate.
A pattern is then formed over the floating gate layer 400 with an etch resist. The floating gate layer 400 is then etched to generate troughs in the floating gate. This step creates additional surface area in the floating gate to increase the capacitive coupling of the floating gate 400 to the control gate. The etch timing determines the depth of the troughs. In one embodiment, the troughs are 50% of the thickness of the floating gate layer. The embodiments of the present invention, however, are not limited to any one depth for the troughs.
The tops of the isolation areas 200 and 202 are also etched so that the oxide material is lowered below the surface of the floating gate layer 400, as illustrated in FIG. 6. In one embodiment, the upper portion oxide of the isolation areas 200 and 202 is removed such that the oxide extends through 50% of the thickness of the floating gate layer 400. The embodiments of the present invention, however, are not limited to any one percentage of extension of the oxide isolation areas 200 and 202 through the floating gate layer 400.
FIG. 6 further illustrates that an intergate dielectric layer 600 is formed over the floating gate 400. This layer 600 may be an oxide-nitride-oxide (ONO) layer, a nitride-oxide (NO) layer, or some other dielectric layer.
Another conductive layer 602 is formed over the dielectric layer 600 to act as the control gate for the memory cell. This layer 600 can be a doped polysilicon material and may contain more than one conductive material such as a polysilicon/silicide/metal structure. The control gate layer 600 is part of a wordline of a memory array. In the embodiment illustrated in FIG. 6, the wordline of the memory array extends laterally across the figure as shown.
FIG. 7 illustrates an alternate embodiment of a high coupling memory cell of the present invention. This embodiment alters the floating gate etching step previously discussed in order to form a multi-level trough 710 and 711 in the floating gate 712 over the oxide isolation areas 700 and 701.
This embodiment can be fabricated by performing multiple etch processes, substantially similar to that discussed previously, to produce the multi-level floating gate over the active areas. The oxide isolation areas are then etched to reduce the oxide material below the surface of the floating gate layer 712. The multi-level embodiment of the present invention provides a greatly increased surface area for the floating gate, thus increasing the capacitive coupling of the memory cell.
The embodiment of FIG. 7 shows two levels being etched into the floating gate 712. However, the embodiments of the present invention are not limited to any certain quantity of levels to increase the floating gate surface area to enhance its coupling to the control gate.
The embodiments of the high coupling memory cell of the present invention are illustrated in a flash memory cell. The flash memory cell can be part of a NAND-architecture flash memory array, a NOR-architecture flash memory array, or any other type of flash memory array. The embodiments of the present invention are not limited to non-volatile memory cells. Any memory cell requiring high capacitive coupling between various layers are encompassed by the present invention.
FIG. 8 illustrates a functional block diagram of a memory device 800 that can incorporate the flash memory cells of the present invention. The memory device 800 is coupled to a processor 810. The processor 810 may be a microprocessor or some other type of controlling circuitry that generates memory control signals. The memory device 800 and the processor 810 form part of a memory system 820. The memory device 800 has been simplified to focus on features of the memory that are helpful in understanding the present invention.
The memory device includes an array of flash memory cells 830. The memory array 830 is arranged in banks of rows and columns. The control gates of each row of memory cells is coupled with a wordline while the drain and source connections of the memory cells are coupled to bitlines. As is well known in the art, the connection of the cells to the bitlines depends on whether the array is a NAND architecture or a NOR architecture. The memory cells of the present invention can be arranged in either a NAND or NOR architecture as well as other architectures.
An address buffer circuit 840 is provided to latch address signals provided on address input connections A0-Ax 842. Address signals are received and decoded by a row decoder 844 and a column decoder 846 to access the memory array 830. It will be appreciated by those skilled in the art, with the benefit of the present description, that the number of address input connections depends on the density and architecture of the memory array 830. That is, the number of addresses increases with both increased memory cell counts and increased bank and block counts.
The memory device 800 reads data in the memory array 830 by sensing voltage or current changes in the memory array columns using sense amplifier/buffer circuitry 850. The sense amplifier/buffer circuitry, in one embodiment, is coupled to read and latch a row of data from the memory array 830. Data input and output buffer circuitry 860 is included for bi-directional data communication over a plurality of data connections 862 with the controller 810. Write circuitry 855 is provided to write data to the memory array.
Control circuitry 870 decodes signals provided on control connections 872 from the processor 810. These signals are used to control the operations on the memory array 830, including data read, data write, and erase operations. The control circuitry 870 may be a state machine, a sequencer, or some other type of controller.
The flash memory device illustrated in FIG. 8 has been simplified to facilitate a basic understanding of the features of the memory and is for purposes of illustration only. A more detailed understanding of internal circuitry and functions of flash memories are known to those skilled in the art. Alternate embodiments may include the flash memory cell of the present invention in other types of electronic systems.

CONCLUSION

In summary, the embodiments of the present invention increase the capacitive coupling of a floating gate to a control gate in a memory cell. This is accomplished without increasing the size of the memory cell. By etching vertical troughs having one or more levels into the floating gate, the surface area of the floating gate is increased, thereby increasing the capacitive coupling with the control gate. The increased capacitive coupling increases the programming and access performance of the cell.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. Many adaptations of the invention will be apparent to those of ordinary skill in the art. Accordingly, this application is intended to cover any adaptations or variations of the invention. It is manifestly intended that this invention be limited only by the following claims and equivalents thereof.

Claims

1. A non-volatile memory device comprising:

a plurality of first dielectric layers formed over a substrate;

a plurality of isolation trenches formed between each of the first dielectric layers and in the substrate;

a plurality of floating gates, each having multi-level troughs, formed over each of the first dielectric layers and between each pair of isolation trenches;

a second dielectric layer formed over each floating gate; and

a control gate formed over each second dielectric layer.

2. The non-volatile memory device of claim 1 wherein the plurality of floating gates and the control gate are doped polysilicon.

3. The non-volatile memory device of claim 1 wherein the non-volatile memory device is a flash memory cell.

4. The non-volatile memory device of claim 1 wherein the first dielectric layer comprises a tunnel dielectric layer.

5. The non-volatile memory device of claim 1 wherein the floating gate comprises a single floating gate layer.

6. The non-volatile memory device of claim 1 wherein the second dielectric layer comprises an integrated dielectric layer.

7. The non-volatile memory device of claim 1 wherein the plurality of isolation trenches each separate active areas of the device.

8. The non-volatile memory device of claim 1 wherein the plurality of isolation trenches each comprise a protruding isolation area that includes an upper portion and a lower portion, wherein the upper portion extends above the first dielectric layer.

9. The non-volatile memory device of claim 8 wherein each side of the upper portion has a substantially concave shape.

10. The non-volatile memory device of claim 8 wherein the top of the upper portion is below an upper surface of each floating gate.

11. The non-volatile memory device of claim 8 wherein the upper portion extends through 50% of the thickness of each floating gate.

12. The non-volatile memory device of claim 8 wherein uppermost edges of the upper portion are narrower than edges of the lower portion.

13. The non-volatile memory device of claim 1 wherein each trough is 50% of the thickness of each floating gate.

14. The non-volatile memory device of claim 1 wherein each trough is formed over an isolation trench.

15. The non-volatile memory device of claim 1 wherein each trough is formed adjacent to an isolation trench.

16. The non-volatile memory device of claim 1 wherein the second dielectric layer comprises an oxide-nitride-oxide (ONO) layer.

17. The non-volatile memory device of claim 1 wherein the second dielectric layer comprises a nitride-oxide (NO) layer.