US20110030389A1 - Heat exchanger - Google Patents
Heat exchanger Download PDFInfo
- Publication number
- US20110030389A1 US20110030389A1 US12/850,348 US85034810A US2011030389A1 US 20110030389 A1 US20110030389 A1 US 20110030389A1 US 85034810 A US85034810 A US 85034810A US 2011030389 A1 US2011030389 A1 US 2011030389A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor elements
- type thermoelectric
- thermoelectric semiconductor
- fluid passage
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
Definitions
- the present invention relates to a heat exchanger, and more particularly, to a heat exchanger including a thermoelectric module (Peltier module) in which a plurality of P type thermoelectric semiconductor elements and a plurality of N type thermoelectric semiconductor elements are electrically connected in series by electrodes and thermally arranged in parallel.
- a thermoelectric module Peltier module
- FIG. 11A shows the structure of a typical thermoelectric module 50 that allows for mutual conversion of heat energy and electrical energy.
- the thermoelectric module 50 includes a plurality of P type thermoelectric semiconductor elements 51 and a plurality of N type thermoelectric semiconductor elements 52 .
- the P type thermoelectric semiconductor elements 51 and the N type thermoelectric semiconductor elements 52 are alternately arranged on a two dimensional plane and electrically connected in series by electrodes 53 .
- electrodes 53 When the thermoelectric module 50 is supplied with DC current, heat is absorbed at one of upper and lower heat exchanging surfaces of the thermoelectric module 50 and dissipated at the other one of the heat exchanging surfaces.
- FIG. 11B shows a heat exchanger 55 including the thermoelectric module 50 .
- the upper and lower electrodes 53 are coupled to ceramic insulative plates 54 .
- the heat exchanger 55 includes a fluid passage 57 .
- a temperature-controlled fluid 56 flows through the fluid passage 57 , which is formed at one heat exchanging side of the thermoelectric module 50 .
- the heat exchanger 55 further includes a fluid passage 59 .
- a temperature-controlling medium 58 heating medium or cooling medium for heating or cooling the temperature-controlled fluid 56 flows through the fluid passage 59 , which is formed at the other heat exchanging side.
- the insulative plates 54 and the inner wall surfaces of the fluid passages 57 and 59 are arranged between the electrodes 53 and the temperature-controlled fluid 56 or between the electrodes 53 and the temperature-controlling medium 58 .
- This structure produces thermal resistance that lowers the efficiency of heat transfer.
- the difference in the coefficient of thermal expansion between the insulative plates 54 and the P type thermoelectric semiconductor elements 51 and the difference in the coefficient of thermal expansion between the insulative plate 54 and the N type thermoelectric semiconductor elements 52 produces thermal stress applied to the coupled portions and the semiconductor elements. This lowers the durability of the coupled portions and the semiconductor elements.
- thermoelectric module 50 A heat exchanger using a thermoelectric module that has satisfactory heat transfer efficiency and transfers heat with small heat variations has been proposed.
- This structure does not use the insulative plates 54 , and the electrodes 53 on at least one of the heat exchanging surfaces of the thermoelectric module 50 are in direct contact with the fluid in the fluid passages 57 and 59 (for example, refer to Japanese Laid-Open Patent Publication No. 11-68173).
- an electrical insulator 60 is filled and solidified in gaps formed between the P type thermoelectric semiconductor elements 51 and the N type thermoelectric semiconductor elements 52 .
- the electrical insulator 60 provides for insulation and increases the structural strength of the thermoelectric module 50 .
- thermoelectric module 50 itself forms the passage wall of the fluid passage 59 .
- the temperature-controlling medium 58 is in direct contact with the electrical insulator 60 and the electrodes 53 .
- the publication describes another structure in which there is also no passage wall between the upper fluid passage 57 and the thermoelectric module 50 .
- thermoelectric conversion unit heat exchanger
- heat exchanger heat exchanger
- thermoelectric module 62 thermoelectric conversion unit
- a refrigerant passage 63 is formed in the refrigerant jacket 61 .
- thermoelectric module 62 a heat absorption side electrode 64 , an N type thermoelectric semiconductor element 65 , a heat dissipation side electrode 66 , and a P type thermoelectric semiconductor element 67 are electrically connected in this order to form a single unit. A plurality of such units (three units in the drawing) are connected in series.
- the heat absorption side electrodes 64 are formed to be planar and coupled to an insulative substrate 68 . End faces of an N type thermoelectric semiconductor element 65 and a P type thermoelectric semiconductor element 67 are each electrically coupled to each heat absorption side electrode 64 .
- the heat dissipation side electrodes 66 each have an extension 66 a formed on the surface opposite to the surface coupled to the corresponding N type thermoelectric semiconductor element 65 and P type thermoelectric semiconductor element 67 .
- the extensions 66 a which are coated by insulative layers, are inserted into holes formed at predetermined intervals in the refrigerant jacket 61 . This exposes the extensions 66 a in the refrigerant passage 63 .
- the heat absorption side electrodes 64 may also have extensions, which are inserted into holes formed at predetermined intervals in the refrigerant jacket 61 and exposed in a refrigerant passage.
- thermoelectric module 50 does not have the insulative plate 54 .
- the electrodes 53 are in contact with the fluids (temperature-controlled fluid 56 or temperature-controlling medium 58 ) in the fluid passages 57 and 59 . This increases the heat transfer efficiency in comparison to a structure including the insulative plate 54 .
- the heat exchange surface (heat transfer surface) that comes into contact with fluid is substantially planar and only includes shallow recesses between the electrodes 53 . This forms a boundary layer when fluid flows in parallel with the heat exchange surface and greatly affects the heat exchange capacity.
- thermoelectric conversion unit of Japanese Laid-Open Patent Publication No. 2000-286459 the extensions 66 a of the heat dissipation side electrodes 66 are exposed in the refrigerant passage 63 .
- the extensions 66 a agitate the refrigerant flowing through the refrigerant passage 63 .
- the effect of the turbulent flow increases the heat dissipating efficiency in comparison with the structure of Japanese Laid-Open Patent Publication No. 11-68173 of which the electrodes do not include such extensions.
- the number of holes formed in the refrigerant jacket 61 must be the same as the number of the heat dissipation side electrodes 66 , and the holes receiving the extensions 66 a must be sealed. This increases the burden on manufacturing and raises the manufacturing cost. Further, depending on the state of the seal, the force of the refrigerant applied to the extensions 66 a may act on the coupled portions between the heat dissipation side electrodes 66 and the N type thermoelectric semiconductor elements 65 and on the coupled portions between the heat dissipation side electrodes 66 and the P type thermoelectric semiconductor elements 67 . This lowers durability.
- thermoelectric module includes a plurality of P type thermoelectric semiconductor elements and a plurality of N type thermoelectric semiconductor elements that are thermally arranged in parallel. Heat dissipation side electrodes formed by planar plates and heat absorption side electrodes formed by planar plates electrically connect in series the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements.
- An electrical insulator couples the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements so as to impede fluid movement between the first fluid passage and the second fluid passage.
- the heat dissipation side electrodes are exposed in the first fluid passage and the heat absorption side electrodes are exposed in the second fluid passage.
- At least the heat dissipation side of the thermoelectric module includes valleys and ridges with the heat dissipation side electrodes being free from projections.
- FIG. 1 is a schematic cross-sectional view showing a heat exchanger according to a first embodiment of the present invention
- FIG. 2 is a schematic perspective view showing a thermoelectric module of FIG. 1 in a state in which an electrical insulator is partially removed from the thermoelectric module;
- FIG. 3A is a plan view showing a thermoelectric module of FIG. 1 in a state in which electrodes are removed from the thermoelectric module;
- FIG. 3B is a cross-sectional diagram taken along line 3 B- 3 B in FIG. 3A ;
- FIG. 4 is a schematic cross-sectional view showing a state in which thermoelectric semiconductor elements are arranged in a lower mold
- FIG. 5 is a schematic cross-sectional diagram showing a state in which resin is filled in a mold to form the electrical insulator
- FIG. 6 is a schematic cross-sectional view showing a heat exchanger according to a second embodiment of the present invention.
- FIG. 7 is a schematic perspective view showing a thermoelectric module of FIG. 6 in a state in which an electrical insulator is partially removed from the thermoelectric module;
- FIG. 8A is a schematic cross-sectional view showing a heat exchanger according to a third embodiment of the present invention.
- FIG. 8B is a schematic perspective view showing a thermoelectric module of FIG. 8A in a state in which an electrical insulator is partially removed from the thermoelectric module;
- FIG. 9A is a schematic cross-sectional view showing a heat exchanger according to a fourth embodiment of the present invention.
- FIG. 9B is an enlarged cross-sectional view showing part of the thermoelectric module of FIG. 9A ;
- FIG. 9C is a plan view showing the thermoelectric module of FIG. 9A ;
- FIGS. 10A and 10B are schematic perspective views showing projections in a further embodiment
- FIG. 11A is a schematic diagram showing a prior art thermoelectric module
- FIG. 11B is a schematic cross-sectional diagram showing a heat exchanger using the thermoelectric module of FIG. 11A ;
- FIG. 12 is a schematic cross-sectional diagram showing another prior art heat exchanger.
- FIG. 13 is a schematic cross-sectional diagram showing a further prior art heat exchanger.
- FIGS. 1 to 5 A first embodiment of the present invention will now be discussed with reference to FIGS. 1 to 5 .
- a heat exchanger includes a thermoelectric module 11 .
- a first fluid 12 flows through a first fluid passage 13 , which is located at a heat dissipation side (upper side as viewed in FIG. 1 ) of the thermoelectric module 11 .
- a second fluid 14 flows through a second fluid passage 15 , which is located at a heat absorption side (lower side as viewed in FIG. 1 ) of the thermoelectric module 11 .
- the thermoelectric module 11 includes a plurality of P type thermoelectric semiconductor elements 16 and a plurality of N type thermoelectric semiconductor elements 17 .
- the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 are electrically connected in series by electrodes and thermally arranged in parallel.
- the phrase “thermally arranged in parallel” refers to a state in which the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 have heat dissipation side surfaces that are all arranged on one side of the thermoelectric module 11 and heat absorption side surfaces that are all arranged on the other side of the thermoelectric module 11 .
- the first fluid passage 13 and the second fluid passage 15 are formed to be flat at least at portions that receive the thermoelectric module 11 . Openings 13 a and 15 a , which face toward each other, are respectively formed in the first fluid passage 13 and the second fluid passage 15 to receive the thermoelectric module 11 .
- the thermoelectric module 11 includes heat dissipation side electrodes 18 and heat absorption side electrodes 19 . In a state in which the heat dissipation side electrodes 18 are exposed in the first fluid passage 13 and the heat absorption side electrodes 19 are exposed in the second fluid passage 15 , the thermoelectric module 11 is arranged between the first fluid passage 13 and second fluid passage 15 , which are spaced from each other by spacers 20 .
- an electrical insulator 21 which is formed from a polymeric material, couples the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 . This impedes the movement of fluid between the first fluid passage 13 and the second fluid passage 15 .
- a thermosetting resin, a thermoplastic resin, or rubber may be used as the polymeric material.
- the preferable material for the electrical insulator 21 is thermosetting resin since thermosetting resin functions to increase the structural strength of the thermoelectric module 11 in addition to insulating the P type thermoelectric semiconductor elements 16 from the N type thermoelectric semiconductor elements 17 .
- the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 are arranged in a plurality of lines so as to form a matrix array in which the P type thermoelectric semiconductor elements 16 are arranged adjacent to the N type thermoelectric semiconductor elements 17 .
- the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 are each formed to have the shape of a square pillar and each have metalized surfaces that are coupled to the electrodes 18 and 19 .
- the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 may be soldered and electrically coupled to the electrodes 18 and 19 .
- the electrodes 18 and 19 are each formed by a metal planar plate having a length allowing for the coupling of one set of a P type thermoelectric semiconductor element 16 and an N type thermoelectric semiconductor element 17 . Further, the electrodes 18 and 19 each have an electrode surface, which is free from projections and which forms a main heat exchange surface of the thermoelectric module 11 .
- the electrical insulator 21 includes a plurality of projections 21 a , which are formed in parts of the heat dissipation side and heat absorption side of the thermoelectric module 11 .
- the projections 21 a each project further from the electrodes 18 and 19 into the first fluid passage 13 or second fluid passage 15 .
- the heat dissipation side and heat absorption side of the thermoelectric module 11 include valleys and ridges with the electrodes 18 and 19 being free from projections.
- the projections 21 a formed at the heat dissipation side have the shape of a parallelepiped, which extends in a direction perpendicular to the direction the first fluid 12 flows in the first fluid passage 13 .
- the projections 21 a are arranged in a zigzagged manner.
- the projections 21 a formed at the heat absorption side are arranged in the same manner.
- the electrodes 18 arranged at the heat dissipation side are all connected to the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 , which extend parallel to the direction the projections 21 a extend. Thus, the electrodes 18 do not interfere with the projections 21 a regardless of the locations of the projections 21 a .
- the phrase “the direction the projections 21 a extend” refer to the widthwise direction of the fluid passage 15 , that is, the direction perpendicular to the direction fluid flows.
- the electrodes 19 arranged at the heat absorption side are arranged in a direction perpendicular to the direction the projections 21 a extend, that is, in the flow direction of the fluid 14 .
- the projections 21 a are formed at positions that do not interfere with the electrodes 19 .
- thermoelectric module 11 Insert molding is performed to form a thermoelectric element unit that couples the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 to the electrical insulator 21 . Then, the end faces of the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 are soldered to the electrodes 18 and 19 to manufacture the thermoelectric module 11 .
- insert molding As shown in FIG. 4 , the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 are positioned and arranged in a lower mold 22 a . Then, as shown in FIG.
- thermoelectric element unit After an upper mold 22 b closes the lower mold 22 a , an unhardened thermosetting resin is charged into the lower and upper molds 22 a and 22 b and heated for hardening. This forms the thermoelectric element unit.
- the positioning of the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 is performed by arranging one end of each of the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 in shallow recesses formed in the lower mold 22 a.
- the heat exchanger is used by applying DC voltage to the electrodes 18 and 19 so that the side of the thermoelectric module 11 facing toward the first fluid passage 13 serves as the heat dissipation side and the side facing toward the second fluid passage 15 serves as the heat absorption side. Further, the first fluid 12 and the second fluid 14 flow in the same direction in the first fluid passage 13 and the second fluid passage 15 , for example, from the left toward the right as viewed in FIG. 1 .
- the first fluid 12 circulates through a path that includes a cooling fan (not shown).
- the heat absorption side electrodes 19 absorb heat from the second fluid 14 , and the heat dissipation side electrodes 18 dissipate heat to the first fluid 12 . That is, direct heat transfer is performed between the electrodes 19 and the second fluid 14 , and direct heat transfer is performed between the electrodes 18 and the first fluid 12 .
- laminar flow boundary layers are produced at the surfaces of the heat dissipation side electrode 18 and the heat absorption side electrodes 19 that serve as heat exchange surfaces. An increase in the influence of the boundary layer would decrease the heat exchange capacity.
- thermoelectric module 11 includes the projections 21 a at the heat dissipation side and heat absorption side so as to form valleys and ridges.
- turbulent flows are produced in the first fluid 12 flowing through the first fluid passage 13 and the second fluid 14 flowing through the second fluid passage 15 at portions corresponding to the thermoelectric module 11 .
- the turbulent flows function to reduce the influence of the boundary layer at the heat exchange surface so that heat exchange is efficiently performed at the heat dissipation side and heat absorption side.
- the first embodiment has the advantages described below.
- the heat dissipation side electrodes 18 and the heat absorption side electrodes 19 are respectively exposed in the first fluid passage 13 and the second fluid passage 15 .
- the electrodes 18 and 19 are in direct contact with fluid (i.e., the first fluid 12 or the second fluid 14 ), and heat exchange is performed efficiently.
- the electrical insulator 21 which is formed from a polymeric material, couples the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 . This impedes the movement of fluid between the first fluid passage 13 and the second fluid passage 15 .
- the electrodes 18 and 19 are formed by planar plates, and the heat dissipation side and heat absorption side of the thermoelectric module 11 include valleys and ridges. Accordingly, the turbulent flow produced by the flow of fluid functions to reduce the influence of a boundary layer at the heat exchange surface so that heat exchange is efficiently performed at the heat dissipation side and heat absorption side. Thus, the heat exchanger efficiently performs heat exchange.
- the valleys and ridges at the heat dissipation side of the thermoelectric module 11 are formed by the projections 21 a , which project from parts of the electrical insulator 21 .
- the projections 21 a project further from the electrodes 18 into the first fluid passage 13 .
- the valleys and ridges at the heat absorption side of the thermoelectric module 11 are formed by the projections 21 a , which project from parts of the electrical insulator 21 .
- the projections 21 a project further from the electrodes 19 into the second fluid passage 15 . In this manner, valleys and ridges are formed in the heat dissipation side and heat absorption side without forming projections (extensions) on the electrodes 18 and 19 .
- the portions at which the electrodes 18 and 19 are coupled to the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 are free from the force of fluid that is applied to the projections. This prevents the durability of such coupled portions from being lowered, which, in turn, prevents the durability of the heat exchanger from being lowered. Moreover, in comparison with a structure that forms projections on electrodes, the manufacturing costs may be reduced.
- thermoelectric element unit by coupling the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 with the electrical insulator 21 while ensuring electric insulation
- the portions that become the projections 21 a are elongated from the other portions of the electrical insulator 21 . This facilitates manufacturing in comparison to a structure that couples the projections 21 a , or extensions, in a subsequent process.
- the electrodes 18 and 19 are formed by metal planar plates. Further, the connection positions of the electrodes 18 and 19 and the formation positions of the projections 21 a are set so that interference does not occur between the electrodes 18 and 19 and the projections 21 a . This simplifies the structures and formation of the electrodes 18 and 19 .
- a second embodiment will now be discussed with reference to FIGS. 6 and 7 .
- This embodiment differs from the first embodiment in the shape of the projections 21 a , which form the valleys and ridges in the heat dissipation side and heat absorption side of the thermoelectric module 11 .
- like or same reference numerals are given to those components that are basically the same as the corresponding components of the first embodiment. Such components will now be described in detail.
- the projections 21 a are formed to be in contact with the inner wall surface of the first fluid passage 13 and the second fluid passage 15 .
- the heat dissipation side projections 21 a are projected to form a plurality of (three in this embodiment) flow paths 13 b in the first fluid passage 13 .
- the arrangement of the heat dissipation side electrodes 18 and the heat absorption side electrodes 19 is the same as the first embodiment.
- the heat absorption side projections 21 a are projected to form a plurality of (two in this embodiment) flow paths 15 b in the second fluid passage 15 so that the projections 21 a do not interfere with the electrodes 19 .
- Each flow path 15 b is 1.5 times longer than each flow path 13 b.
- the first fluid 12 that flows through the first fluid passage 13 passes through the portion corresponding to the thermoelectric module 11 , the first fluid 12 is divided into three when entering the three flow paths 13 b .
- Each flow path 13 b is formed to meander and does not extend straight.
- the first fluid 12 produces a turbulent flow in each flow path 13 b .
- the second fluid 14 that flows through the second fluid passage 15 is divided into two when entering the two flow paths 15 b .
- the second fluid 14 produces a turbulent flow in each flow path 15 b .
- the turbulent flow functions to reduce the influence of a boundary layer at the heat exchange surface, and heat exchange is efficiently performed at the heat dissipation side and heat absorption side.
- the second embodiment has the advantages described below.
- the first fluid 12 in the first fluid passage 13 and the second fluid 14 in the second fluid passage 15 flow along the flow paths 13 b and 15 b , which are formed by part of the electrical insulator 21 . This facilitates calculation of the heat exchange efficiency for each of the electrodes 18 and 19 .
- thermoelectric module 11 is supported between the first fluid passage 13 and the second fluid passage 15 in a state in which the projections 21 a are in contact with the inner wall surfaces of the first and second fluid passages 13 and 15 .
- the projections 21 a have distal ends that abut against the inner wall surface of the first fluid passage 13 and the inner wall surface of the second fluid passage 15 . This allows for elimination of the spacer 20 .
- thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 have end faces that are not arranged along the same plane.
- like or same reference numerals are given to those components that are basically the same as the corresponding components of the first embodiment. Such components will now be described in detail.
- the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 are all formed to have the same size. However, the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 have end faces arranged in rows, the locations of which are alternately varied. In this state, the electrical insulator 21 couples the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 . Accordingly, the thermoelectric module 11 in its entirety has valleys and ridges formed in both of the heat dissipation and heat absorption sides. Further, as shown in FIG.
- thermoelectric module 11 is arranged between the first fluid passage 13 and the second fluid passage 15 in a state in which projections 23 extend in a direction perpendicular to the direction the first fluid 12 and second fluid 14 flow (from the left toward the right in FIG. 8A ).
- the electrodes 18 connected to the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 at the heat dissipation side of the thermoelectric module 11 all extend parallel to the extending direction the projections 23 .
- the electrodes 18 are formed to be planar.
- the electrodes 19 coupled to the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 at the heat absorption side are each connected to a P type thermoelectric semiconductor element 16 that serves as a projection 23 and an N type thermoelectric semiconductor element 17 that does not serve as one.
- an electrode 19 is bent into the shape of a crank to allow for the connection of the electrode 19 .
- valleys and ridges are also formed at portions in the heat dissipation side and heat absorption side of the thermoelectric module 11 .
- turbulent flows are produced in the first fluid 12 , which flows through the first fluid passage 13 , and the second fluid 14 , which flows through the second fluid passage 15 , at portions corresponding to the thermoelectric module 11 .
- the electrical insulator 21 couples the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 by performing insert molding with a mold having a cavity shaped differently from that of the first embodiment. Further, the electrodes 19 that are bent into the shape of a crank are easily manufactured by pressing a metal plate.
- this embodiment has the advantages described below.
- thermoelectric module 11 The valleys and ridges at the heat dissipation side of the thermoelectric module 11 are formed by coupling the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 with the electrical insulator 21 so that their end faces are arranged on different planes. Accordingly, the thermoelectric module 11 is easily manufactured by varying the locations of the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 that have the same size and using the electrodes 19 that are formed by bending planar plates into a crank shape.
- the projections 23 are formed to extend entirely in the widthwise direction of the first fluid passage 13 and the second fluid passage 15 (i.e., the direction perpendicular to the direction in which fluid flows). Thus, there is a tendency for a turbulent flow to be easily produced along the entire heat exchange surface.
- thermoelectric modules A fourth embodiment will now be discussed with reference to FIGS. 9A to 9C .
- This embodiment differs from each of the embodiments discussed above in that there are a plurality of thermoelectric modules.
- like or same reference numerals are given to those components that are basically the same as the corresponding components of the first embodiment. Such components will now be described in detail.
- a heat exchanger includes a plurality of (four in this embodiment) thermoelectric modules 11 arranged between the first fluid passage 13 and the second fluid passage 15 .
- each thermoelectric module 11 includes a total of thirty-six P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 .
- each thermoelectric module 11 includes a total of sixteen P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 .
- each thermoelectric module 11 includes less semiconductor elements than that of the first embodiment.
- the total number of the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 in the four thermoelectric modules 11 is sixty-four. Thus, the total number of the semiconductor elements is greater than that of the first embodiment.
- thermoelectric module 11 As shown in FIGS. 9B and 9C , a packing 24 is formed integrally with the periphery of each thermoelectric module 11 . Further, as shown in FIG. 9B , the packing 24 holds the corresponding thermoelectric module 11 between the first fluid passage 13 and the second fluid passage 15 . Projections 21 a projecting into the first fluid passage 13 and the second fluid passage 15 are formed at the heat dissipation side and heat absorption side of each thermoelectric module 11 . The thermoelectric modules 11 are connected in series by electrode terminals (not shown). Further, the thermoelectric modules 11 are all simultaneously supplied with the same current.
- this embodiment has the advantages described below.
- thermoelectric module 11 is independently attached by the corresponding packing 24 to the first fluid passage 13 and the second fluid passage 15 to form the entire heat exchanger.
- the heat exchanger may increase the number of thermoelectric modules 11 accordingly, with each thermoelectric module 11 having a relatively small number of the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 . This lowers the manufacturing cost of the thermoelectric module 11 , which, in turn, lowers the manufacturing cost of the heat exchanger.
- the defective thermoelectric module 11 may be located by detecting the voltage or current between the terminals of each thermoelectric module 11 .
- the shape of the projections 21 a is not limited to a parallelepiped and may be a triangular solid as shown in FIG. 10A or saw-toothed as shown in FIG. 10B . Further, the length of the projections 21 a may be varied. Alternatively, projections 21 a of different shapes and lengths may be used in combination. The shapes, lengths, and the like of the projections 21 a that allow for efficient heat exchange vary in accordance with the physical properties (e.g., viscosity) or flow velocity of the first fluid 12 and second fluid 14 . It is thus preferable that experiments be conducted to obtain the shape, length, and the like that allows for a suitable turbulent flow to be easily produced when setting the shape, length, and location of the projections 21 a.
- the physical properties e.g., viscosity
- the shape and length of the first fluid passage 13 and the second fluid passage 15 varies in accordance with the amount of heat generated by the thermoelectric module 11 and the physical properties (e.g., viscosity) and flow velocity of the refrigerant. It is thus preferable that experiments be conducted to obtain the shape, length, and the like that allows for a suitable turbulent flow to be easily produced when setting the shape, length, and location of the first and second fluid passages 13 and 15 .
- thermoelectric module 11 is not limited to a structure in which the valleys and ridges are arranged on both of the heat dissipation side and the heat absorption side. It is only required that the valleys and ridges be arranged on at least the heat dissipation side.
- the amount of heat generated at the heat dissipation side is approximately four times greater than the heat absorbed at the heat absorption side. This allows for the requirements of the heat exchanger to be easily fulfilled by efficiently exchanging heat at the heat dissipation side.
- the first fluid 12 and the second fluid 14 are not limited to an insulative liquid and may be an insulative gas (e.g., air) or a conductive liquid.
- an insulative coating must be applied to the surfaces of the electrodes 18 and 19 that contact the first fluid 12 and the second fluid 14 .
- the projections 21 a do not have to be formed by extending parts of the electrical insulators 21 and may be formed by adhering discrete components to the electrical insulator 21 . In this case, after connecting the electrodes 18 and 19 to the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 , the projections 21 a may be coupled to the electrical insulator 21 so as to intersect the electrodes 18 and 19 . This allows for the arrangement of the projections 21 a and the electrodes 18 and 19 in an intersecting state without any problems and thereby increases the degree of freedom for the locations of the projections 21 a.
- first fluid 12 and the second fluid 14 do not have to flow in the same direction.
- the first fluid 12 in the first fluid passage 13 and the second fluid 14 in the second fluid passage 15 may flow in opposite directions (opposed flow).
- the valleys and ridges on the heat dissipation side and heat absorption side of the thermoelectric module 11 are provided without arranging the end faces of the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 on the same plane. Further, the end faces of the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 are arranged in rows, the locations of which are alternately varied. However, the present invention is not limited to such a structure. For example, the locations of just one half of the end faces in each row may be alternately varied. Alternatively, the locations of every single end face or every two end faces may be alternately varied.
- the electrical insulator 21 that couples the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 do not necessarily have to be formed at locations corresponding to the projections 23 .
- thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 When arranging the valleys and ridges on the heat dissipation side and heat absorption side of the thermoelectric module 11 without arranging the end faces of the P type thermoelectric semiconductor elements 16 and N type thermoelectric semiconductor elements 17 on the same plane, P type thermoelectric semiconductor elements 16 of two different lengths and N type thermoelectric semiconductor elements 17 of two different lengths may be used.
- thermoelectric module 11 The matrix array of the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 that form the thermoelectric module 11 do not have to include the same number of rows and columns.
- the P type thermoelectric semiconductor elements 16 and the N type thermoelectric semiconductor elements 17 do not have to have the shape of a square pillar and may have the shape of another type of a polygonal pillar or a cylindrical pillar.
- the other embodiments may also include the packing 24 that is formed around the thermoelectric module 11 and attaches the thermoelectric module 11 between the first fluid passage 13 and the second fluid passage 15 .
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Devices For Blowing Cold Air, Devices For Blowing Warm Air, And Means For Preventing Water Condensation In Air Conditioning Units (AREA)
Abstract
A heat exchanger includes a thermoelectric module. A first fluid passage is arranged at a heat dissipation side of the thermoelectric module and a second fluid passage is arranged at a heat absorption side of the thermoelectric module. The thermoelectric module includes P type and N type thermoelectric semiconductor elements. An electrical insulator couples the P type and N type thermoelectric semiconductor elements. Heat dissipation side electrodes are exposed in the first fluid passage and heat absorption side electrodes are exposed in the second fluid passage. At least the heat dissipation side of the thermoelectric module includes valleys and ridges with the heat dissipation side electrode being free from projections.
Description
- The present invention relates to a heat exchanger, and more particularly, to a heat exchanger including a thermoelectric module (Peltier module) in which a plurality of P type thermoelectric semiconductor elements and a plurality of N type thermoelectric semiconductor elements are electrically connected in series by electrodes and thermally arranged in parallel.
-
FIG. 11A shows the structure of a typicalthermoelectric module 50 that allows for mutual conversion of heat energy and electrical energy. Thethermoelectric module 50 includes a plurality of P typethermoelectric semiconductor elements 51 and a plurality of N typethermoelectric semiconductor elements 52. The P typethermoelectric semiconductor elements 51 and the N typethermoelectric semiconductor elements 52 are alternately arranged on a two dimensional plane and electrically connected in series byelectrodes 53. When thethermoelectric module 50 is supplied with DC current, heat is absorbed at one of upper and lower heat exchanging surfaces of thethermoelectric module 50 and dissipated at the other one of the heat exchanging surfaces.FIG. 11B shows aheat exchanger 55 including thethermoelectric module 50. The upper andlower electrodes 53 are coupled to ceramicinsulative plates 54. This forms a sandwiching structure in which the P typethermoelectric semiconductor elements 51, the N typethermoelectric semiconductor elements 52, and theelectrodes 53 are held between theinsulative plates 54. Theheat exchanger 55 includes afluid passage 57. A temperature-controlledfluid 56 flows through thefluid passage 57, which is formed at one heat exchanging side of thethermoelectric module 50. Theheat exchanger 55 further includes afluid passage 59. A temperature-controlling medium 58 (heating medium or cooling medium) for heating or cooling the temperature-controlledfluid 56 flows through thefluid passage 59, which is formed at the other heat exchanging side. - In the structure of the
heat exchanger 55 shown inFIG. 11B , theinsulative plates 54 and the inner wall surfaces of thefluid passages electrodes 53 and the temperature-controlledfluid 56 or between theelectrodes 53 and the temperature-controllingmedium 58. This structure produces thermal resistance that lowers the efficiency of heat transfer. Further, the difference in the coefficient of thermal expansion between theinsulative plates 54 and the P typethermoelectric semiconductor elements 51 and the difference in the coefficient of thermal expansion between theinsulative plate 54 and the N typethermoelectric semiconductor elements 52 produces thermal stress applied to the coupled portions and the semiconductor elements. This lowers the durability of the coupled portions and the semiconductor elements. - A heat exchanger using a thermoelectric module that has satisfactory heat transfer efficiency and transfers heat with small heat variations has been proposed. This structure does not use the
insulative plates 54, and theelectrodes 53 on at least one of the heat exchanging surfaces of thethermoelectric module 50 are in direct contact with the fluid in thefluid passages 57 and 59 (for example, refer to Japanese Laid-Open Patent Publication No. 11-68173). In thethermoelectric module 50 of this heat exchanger, as shown inFIG. 12 , anelectrical insulator 60 is filled and solidified in gaps formed between the P typethermoelectric semiconductor elements 51 and the N typethermoelectric semiconductor elements 52. Theelectrical insulator 60 provides for insulation and increases the structural strength of thethermoelectric module 50. There is no passage wall between thelower fluid passage 59 and thethermoelectric module 50. Thethermoelectric module 50 itself forms the passage wall of thefluid passage 59. Thus, the temperature-controllingmedium 58 is in direct contact with theelectrical insulator 60 and theelectrodes 53. The publication describes another structure in which there is also no passage wall between theupper fluid passage 57 and thethermoelectric module 50. - To improve the heat dissipation efficiency, a thermoelectric conversion unit (heat exchanger) including heat dissipation side electrodes having heat dissipation portions exposed in a refrigerant passage has been proposed (Japanese Laid-Open Patent Publication No. 2000-286459). As shown in
FIG. 13 , the heat exchanger includes arefrigerant jacket 61 and a thermoelectric module 62 (thermoelectric conversion unit). Arefrigerant passage 63 is formed in therefrigerant jacket 61. In thethermoelectric module 62, a heatabsorption side electrode 64, an N typethermoelectric semiconductor element 65, a heatdissipation side electrode 66, and a P typethermoelectric semiconductor element 67 are electrically connected in this order to form a single unit. A plurality of such units (three units in the drawing) are connected in series. - The heat
absorption side electrodes 64 are formed to be planar and coupled to aninsulative substrate 68. End faces of an N typethermoelectric semiconductor element 65 and a P typethermoelectric semiconductor element 67 are each electrically coupled to each heatabsorption side electrode 64. The heatdissipation side electrodes 66 each have anextension 66 a formed on the surface opposite to the surface coupled to the corresponding N typethermoelectric semiconductor element 65 and P typethermoelectric semiconductor element 67. Theextensions 66 a, which are coated by insulative layers, are inserted into holes formed at predetermined intervals in therefrigerant jacket 61. This exposes theextensions 66 a in therefrigerant passage 63. In addition to the heatdissipation side electrodes 66, the heatabsorption side electrodes 64 may also have extensions, which are inserted into holes formed at predetermined intervals in therefrigerant jacket 61 and exposed in a refrigerant passage. - In the heat exchanger of Japanese Laid-Open Patent Publication No. 11-68173, at least one of the heat transfer sides of the
thermoelectric module 50 does not have theinsulative plate 54. Further, theelectrodes 53 are in contact with the fluids (temperature-controlledfluid 56 or temperature-controlling medium 58) in thefluid passages insulative plate 54. However, the heat exchange surface (heat transfer surface) that comes into contact with fluid is substantially planar and only includes shallow recesses between theelectrodes 53. This forms a boundary layer when fluid flows in parallel with the heat exchange surface and greatly affects the heat exchange capacity. - In the thermoelectric conversion unit of Japanese Laid-Open Patent Publication No. 2000-286459, the
extensions 66 a of the heatdissipation side electrodes 66 are exposed in therefrigerant passage 63. Thus, theextensions 66 a agitate the refrigerant flowing through therefrigerant passage 63. The effect of the turbulent flow increases the heat dissipating efficiency in comparison with the structure of Japanese Laid-Open Patent Publication No. 11-68173 of which the electrodes do not include such extensions. However, in the structure of Japanese Laid-Open Patent Publication No. 2000-286459, the number of holes formed in therefrigerant jacket 61 must be the same as the number of the heatdissipation side electrodes 66, and the holes receiving theextensions 66 a must be sealed. This increases the burden on manufacturing and raises the manufacturing cost. Further, depending on the state of the seal, the force of the refrigerant applied to theextensions 66 a may act on the coupled portions between the heatdissipation side electrodes 66 and the N typethermoelectric semiconductor elements 65 and on the coupled portions between the heatdissipation side electrodes 66 and the P typethermoelectric semiconductor elements 67. This lowers durability. - It is an object of the present invention to provide a heat exchanger that performs heat exchange efficiently and includes a plurality of P type thermoelectric semiconductor elements and a plurality of N type thermoelectric semiconductor elements that are electrically connected in series and thermally arranged in parallel.
- One aspect of the present invention is a heat exchanger including a thermoelectric module. Heat exchange is performed between a first fluid flowing through a first fluid passage arranged at a heat dissipation side of the thermoelectric module and a second fluid flowing through a second fluid passage arranged at a heat absorption side of the thermoelectric module. The thermoelectric module includes a plurality of P type thermoelectric semiconductor elements and a plurality of N type thermoelectric semiconductor elements that are thermally arranged in parallel. Heat dissipation side electrodes formed by planar plates and heat absorption side electrodes formed by planar plates electrically connect in series the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements. An electrical insulator couples the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements so as to impede fluid movement between the first fluid passage and the second fluid passage. The heat dissipation side electrodes are exposed in the first fluid passage and the heat absorption side electrodes are exposed in the second fluid passage. At least the heat dissipation side of the thermoelectric module includes valleys and ridges with the heat dissipation side electrodes being free from projections.
- Other aspects and advantages of the present invention will become apparent from the following description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
- The invention, together with objects and advantages thereof, may best be understood by reference to the following description of the presently preferred embodiments together with the accompanying drawings in which:
-
FIG. 1 is a schematic cross-sectional view showing a heat exchanger according to a first embodiment of the present invention; -
FIG. 2 is a schematic perspective view showing a thermoelectric module ofFIG. 1 in a state in which an electrical insulator is partially removed from the thermoelectric module; -
FIG. 3A is a plan view showing a thermoelectric module ofFIG. 1 in a state in which electrodes are removed from the thermoelectric module; -
FIG. 3B is a cross-sectional diagram taken alongline 3B-3B inFIG. 3A ; -
FIG. 4 is a schematic cross-sectional view showing a state in which thermoelectric semiconductor elements are arranged in a lower mold; -
FIG. 5 is a schematic cross-sectional diagram showing a state in which resin is filled in a mold to form the electrical insulator; -
FIG. 6 is a schematic cross-sectional view showing a heat exchanger according to a second embodiment of the present invention; -
FIG. 7 is a schematic perspective view showing a thermoelectric module ofFIG. 6 in a state in which an electrical insulator is partially removed from the thermoelectric module; -
FIG. 8A is a schematic cross-sectional view showing a heat exchanger according to a third embodiment of the present invention; -
FIG. 8B is a schematic perspective view showing a thermoelectric module ofFIG. 8A in a state in which an electrical insulator is partially removed from the thermoelectric module; -
FIG. 9A is a schematic cross-sectional view showing a heat exchanger according to a fourth embodiment of the present invention; -
FIG. 9B is an enlarged cross-sectional view showing part of the thermoelectric module ofFIG. 9A ; -
FIG. 9C is a plan view showing the thermoelectric module ofFIG. 9A ; -
FIGS. 10A and 10B are schematic perspective views showing projections in a further embodiment; -
FIG. 11A is a schematic diagram showing a prior art thermoelectric module; -
FIG. 11B is a schematic cross-sectional diagram showing a heat exchanger using the thermoelectric module ofFIG. 11A ; -
FIG. 12 is a schematic cross-sectional diagram showing another prior art heat exchanger; and -
FIG. 13 is a schematic cross-sectional diagram showing a further prior art heat exchanger. - A first embodiment of the present invention will now be discussed with reference to
FIGS. 1 to 5 . - Referring to
FIG. 1 , a heat exchanger includes athermoelectric module 11. Afirst fluid 12 flows through afirst fluid passage 13, which is located at a heat dissipation side (upper side as viewed inFIG. 1 ) of thethermoelectric module 11. Asecond fluid 14 flows through asecond fluid passage 15, which is located at a heat absorption side (lower side as viewed inFIG. 1 ) of thethermoelectric module 11. - The
thermoelectric module 11 includes a plurality of P typethermoelectric semiconductor elements 16 and a plurality of N typethermoelectric semiconductor elements 17. The P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 are electrically connected in series by electrodes and thermally arranged in parallel. The phrase “thermally arranged in parallel” refers to a state in which the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 have heat dissipation side surfaces that are all arranged on one side of thethermoelectric module 11 and heat absorption side surfaces that are all arranged on the other side of thethermoelectric module 11. - The
first fluid passage 13 and thesecond fluid passage 15 are formed to be flat at least at portions that receive thethermoelectric module 11.Openings first fluid passage 13 and thesecond fluid passage 15 to receive thethermoelectric module 11. Thethermoelectric module 11 includes heatdissipation side electrodes 18 and heatabsorption side electrodes 19. In a state in which the heatdissipation side electrodes 18 are exposed in thefirst fluid passage 13 and the heatabsorption side electrodes 19 are exposed in thesecond fluid passage 15, thethermoelectric module 11 is arranged between thefirst fluid passage 13 andsecond fluid passage 15, which are spaced from each other byspacers 20. In thethermoelectric module 11, anelectrical insulator 21, which is formed from a polymeric material, couples the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17. This impedes the movement of fluid between thefirst fluid passage 13 and thesecond fluid passage 15. A thermosetting resin, a thermoplastic resin, or rubber may be used as the polymeric material. However, the preferable material for theelectrical insulator 21 is thermosetting resin since thermosetting resin functions to increase the structural strength of thethermoelectric module 11 in addition to insulating the P typethermoelectric semiconductor elements 16 from the N typethermoelectric semiconductor elements 17. - As shown in
FIG. 3A , the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 are arranged in a plurality of lines so as to form a matrix array in which the P typethermoelectric semiconductor elements 16 are arranged adjacent to the N typethermoelectric semiconductor elements 17. The P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 are each formed to have the shape of a square pillar and each have metalized surfaces that are coupled to theelectrodes thermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 may be soldered and electrically coupled to theelectrodes electrodes thermoelectric semiconductor element 16 and an N typethermoelectric semiconductor element 17. Further, theelectrodes thermoelectric module 11. - The
electrical insulator 21 includes a plurality ofprojections 21 a, which are formed in parts of the heat dissipation side and heat absorption side of thethermoelectric module 11. Theprojections 21 a each project further from theelectrodes first fluid passage 13 orsecond fluid passage 15. In other words, the heat dissipation side and heat absorption side of thethermoelectric module 11 include valleys and ridges with theelectrodes FIGS. 2 and 3( a), theprojections 21 a formed at the heat dissipation side have the shape of a parallelepiped, which extends in a direction perpendicular to the direction thefirst fluid 12 flows in thefirst fluid passage 13. Theprojections 21 a are arranged in a zigzagged manner. Theprojections 21 a formed at the heat absorption side are arranged in the same manner. - The
electrodes 18 arranged at the heat dissipation side are all connected to the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17, which extend parallel to the direction theprojections 21 a extend. Thus, theelectrodes 18 do not interfere with theprojections 21 a regardless of the locations of theprojections 21 a. The phrase “the direction theprojections 21 a extend” refer to the widthwise direction of thefluid passage 15, that is, the direction perpendicular to the direction fluid flows. Among theelectrodes 19 arranged at the heat absorption side, theelectrodes 19 at the two sides of thethermoelectric module 11 with respect to the direction theprojections 21 a extend are arranged in a direction perpendicular to the direction theprojections 21 a extend, that is, in the flow direction of the fluid 14. Thus, theprojections 21 a are formed at positions that do not interfere with theelectrodes 19. - The manufacturing of the
thermoelectric module 11 will now be described. Insert molding is performed to form a thermoelectric element unit that couples the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 to theelectrical insulator 21. Then, the end faces of the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 are soldered to theelectrodes thermoelectric module 11. When performing insert molding, as shown inFIG. 4 , the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 are positioned and arranged in alower mold 22 a. Then, as shown inFIG. 5 , after anupper mold 22 b closes thelower mold 22 a, an unhardened thermosetting resin is charged into the lower andupper molds thermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 is performed by arranging one end of each of the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 in shallow recesses formed in thelower mold 22 a. - The operation of the heat exchanger will now be described. The heat exchanger is used by applying DC voltage to the
electrodes thermoelectric module 11 facing toward thefirst fluid passage 13 serves as the heat dissipation side and the side facing toward thesecond fluid passage 15 serves as the heat absorption side. Further, thefirst fluid 12 and thesecond fluid 14 flow in the same direction in thefirst fluid passage 13 and thesecond fluid passage 15, for example, from the left toward the right as viewed inFIG. 1 . Thefirst fluid 12 circulates through a path that includes a cooling fan (not shown). - When the
thermoelectric module 11 is activated, the heatabsorption side electrodes 19 absorb heat from thesecond fluid 14, and the heatdissipation side electrodes 18 dissipate heat to thefirst fluid 12. That is, direct heat transfer is performed between theelectrodes 19 and thesecond fluid 14, and direct heat transfer is performed between theelectrodes 18 and thefirst fluid 12. When fluid travels in a laminar flow, laminar flow boundary layers are produced at the surfaces of the heatdissipation side electrode 18 and the heatabsorption side electrodes 19 that serve as heat exchange surfaces. An increase in the influence of the boundary layer would decrease the heat exchange capacity. However, thethermoelectric module 11 includes theprojections 21 a at the heat dissipation side and heat absorption side so as to form valleys and ridges. Thus, turbulent flows are produced in thefirst fluid 12 flowing through thefirst fluid passage 13 and thesecond fluid 14 flowing through thesecond fluid passage 15 at portions corresponding to thethermoelectric module 11. The turbulent flows function to reduce the influence of the boundary layer at the heat exchange surface so that heat exchange is efficiently performed at the heat dissipation side and heat absorption side. - The first embodiment has the advantages described below.
- (1) The heat
dissipation side electrodes 18 and the heatabsorption side electrodes 19 are respectively exposed in thefirst fluid passage 13 and thesecond fluid passage 15. Thus, theelectrodes first fluid 12 or the second fluid 14), and heat exchange is performed efficiently. - (2) The
electrical insulator 21, which is formed from a polymeric material, couples the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17. This impedes the movement of fluid between thefirst fluid passage 13 and thesecond fluid passage 15. Theelectrodes thermoelectric module 11 include valleys and ridges. Accordingly, the turbulent flow produced by the flow of fluid functions to reduce the influence of a boundary layer at the heat exchange surface so that heat exchange is efficiently performed at the heat dissipation side and heat absorption side. Thus, the heat exchanger efficiently performs heat exchange. - (3) The valleys and ridges at the heat dissipation side of the
thermoelectric module 11 are formed by theprojections 21 a, which project from parts of theelectrical insulator 21. Theprojections 21 a project further from theelectrodes 18 into thefirst fluid passage 13. The valleys and ridges at the heat absorption side of thethermoelectric module 11 are formed by theprojections 21 a, which project from parts of theelectrical insulator 21. Theprojections 21 a project further from theelectrodes 19 into thesecond fluid passage 15. In this manner, valleys and ridges are formed in the heat dissipation side and heat absorption side without forming projections (extensions) on theelectrodes electrodes electrodes electrodes thermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 are free from the force of fluid that is applied to the projections. This prevents the durability of such coupled portions from being lowered, which, in turn, prevents the durability of the heat exchanger from being lowered. Moreover, in comparison with a structure that forms projections on electrodes, the manufacturing costs may be reduced. - (4) When using a mold to form the thermoelectric element unit by coupling the P type
thermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 with theelectrical insulator 21 while ensuring electric insulation, the portions that become theprojections 21 a are elongated from the other portions of theelectrical insulator 21. This facilitates manufacturing in comparison to a structure that couples theprojections 21 a, or extensions, in a subsequent process. - (5) The
electrodes electrodes projections 21 a are set so that interference does not occur between theelectrodes projections 21 a. This simplifies the structures and formation of theelectrodes - A second embodiment will now be discussed with reference to
FIGS. 6 and 7 . This embodiment differs from the first embodiment in the shape of theprojections 21 a, which form the valleys and ridges in the heat dissipation side and heat absorption side of thethermoelectric module 11. To avoid redundancy, like or same reference numerals are given to those components that are basically the same as the corresponding components of the first embodiment. Such components will now be described in detail. - As shown in
FIG. 6 , theprojections 21 a are formed to be in contact with the inner wall surface of thefirst fluid passage 13 and thesecond fluid passage 15. As shown inFIG. 7 , the heatdissipation side projections 21 a are projected to form a plurality of (three in this embodiment)flow paths 13 b in thefirst fluid passage 13. The arrangement of the heatdissipation side electrodes 18 and the heatabsorption side electrodes 19 is the same as the first embodiment. Thus, the heatabsorption side projections 21 a are projected to form a plurality of (two in this embodiment)flow paths 15 b in thesecond fluid passage 15 so that theprojections 21 a do not interfere with theelectrodes 19. Eachflow path 15 b is 1.5 times longer than eachflow path 13 b. - In the heat exchanger of this embodiment, as the
first fluid 12 that flows through thefirst fluid passage 13 passes through the portion corresponding to thethermoelectric module 11, thefirst fluid 12 is divided into three when entering the threeflow paths 13 b. Eachflow path 13 b is formed to meander and does not extend straight. Thus, thefirst fluid 12 produces a turbulent flow in eachflow path 13 b. Further, thesecond fluid 14 that flows through thesecond fluid passage 15 is divided into two when entering the twoflow paths 15 b. Thesecond fluid 14 produces a turbulent flow in eachflow path 15 b. Further, whenever thesecond fluid 14 meanders back and forth in theflow path 15 b, thesecond fluid 14 travels over a distance that is 1.5 times longer than the meandering distance of theflow paths 13 b. As a result, the turbulent flow functions to reduce the influence of a boundary layer at the heat exchange surface, and heat exchange is efficiently performed at the heat dissipation side and heat absorption side. - Accordingly, in addition to advantages (1) to (5) of the first embodiment, the second embodiment has the advantages described below.
- (6) The
first fluid 12 in thefirst fluid passage 13 and thesecond fluid 14 in thesecond fluid passage 15 flow along theflow paths electrical insulator 21. This facilitates calculation of the heat exchange efficiency for each of theelectrodes - (7) The
thermoelectric module 11 is supported between thefirst fluid passage 13 and thesecond fluid passage 15 in a state in which theprojections 21 a are in contact with the inner wall surfaces of the first and secondfluid passages projections 21 a have distal ends that abut against the inner wall surface of thefirst fluid passage 13 and the inner wall surface of thesecond fluid passage 15. This allows for elimination of thespacer 20. - A third embodiment will now be discussed with reference to
FIGS. 8A and 8B . This embodiment differs from the first embodiment in that the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 have end faces that are not arranged along the same plane. To avoid redundancy, like or same reference numerals are given to those components that are basically the same as the corresponding components of the first embodiment. Such components will now be described in detail. - As shown in
FIGS. 8A and 8B , the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 are all formed to have the same size. However, the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 have end faces arranged in rows, the locations of which are alternately varied. In this state, theelectrical insulator 21 couples the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17. Accordingly, thethermoelectric module 11 in its entirety has valleys and ridges formed in both of the heat dissipation and heat absorption sides. Further, as shown inFIG. 8A , thethermoelectric module 11 is arranged between thefirst fluid passage 13 and thesecond fluid passage 15 in a state in whichprojections 23 extend in a direction perpendicular to the direction thefirst fluid 12 andsecond fluid 14 flow (from the left toward the right inFIG. 8A ). Theelectrodes 18 connected to the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 at the heat dissipation side of thethermoelectric module 11 all extend parallel to the extending direction theprojections 23. Thus, theelectrodes 18 are formed to be planar. However, among theelectrodes 19 coupled to the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 at the heat absorption side, theelectrodes 19 located at the two sides of thethermoelectric module 11 with respect to the direction theprojections 23 extend are each connected to a P typethermoelectric semiconductor element 16 that serves as aprojection 23 and an N typethermoelectric semiconductor element 17 that does not serve as one. Thus, such anelectrode 19 is bent into the shape of a crank to allow for the connection of theelectrode 19. - In this embodiment, valleys and ridges are also formed at portions in the heat dissipation side and heat absorption side of the
thermoelectric module 11. Thus, turbulent flows are produced in thefirst fluid 12, which flows through thefirst fluid passage 13, and thesecond fluid 14, which flows through thesecond fluid passage 15, at portions corresponding to thethermoelectric module 11. Theelectrical insulator 21 couples the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 by performing insert molding with a mold having a cavity shaped differently from that of the first embodiment. Further, theelectrodes 19 that are bent into the shape of a crank are easily manufactured by pressing a metal plate. - Accordingly, in addition to advantages (1) and (2) of the first embodiment, this embodiment has the advantages described below.
- (8) The valleys and ridges at the heat dissipation side of the
thermoelectric module 11 are formed by coupling the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 with theelectrical insulator 21 so that their end faces are arranged on different planes. Accordingly, thethermoelectric module 11 is easily manufactured by varying the locations of the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 that have the same size and using theelectrodes 19 that are formed by bending planar plates into a crank shape. - (9) The
projections 23 are formed to extend entirely in the widthwise direction of thefirst fluid passage 13 and the second fluid passage 15 (i.e., the direction perpendicular to the direction in which fluid flows). Thus, there is a tendency for a turbulent flow to be easily produced along the entire heat exchange surface. - A fourth embodiment will now be discussed with reference to
FIGS. 9A to 9C . This embodiment differs from each of the embodiments discussed above in that there are a plurality of thermoelectric modules. To avoid redundancy, like or same reference numerals are given to those components that are basically the same as the corresponding components of the first embodiment. Such components will now be described in detail. - As shown in
FIG. 9A , a heat exchanger includes a plurality of (four in this embodiment)thermoelectric modules 11 arranged between thefirst fluid passage 13 and thesecond fluid passage 15. In the embodiments discussed above, eachthermoelectric module 11 includes a total of thirty-six P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17. In this embodiment, eachthermoelectric module 11 includes a total of sixteen P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17. Thus, eachthermoelectric module 11 includes less semiconductor elements than that of the first embodiment. However, the total number of the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 in the fourthermoelectric modules 11 is sixty-four. Thus, the total number of the semiconductor elements is greater than that of the first embodiment. - As shown in
FIGS. 9B and 9C , a packing 24 is formed integrally with the periphery of eachthermoelectric module 11. Further, as shown inFIG. 9B , the packing 24 holds the correspondingthermoelectric module 11 between thefirst fluid passage 13 and thesecond fluid passage 15.Projections 21 a projecting into thefirst fluid passage 13 and thesecond fluid passage 15 are formed at the heat dissipation side and heat absorption side of eachthermoelectric module 11. Thethermoelectric modules 11 are connected in series by electrode terminals (not shown). Further, thethermoelectric modules 11 are all simultaneously supplied with the same current. - In addition to advantages (1) to (5) of the first embodiment, this embodiment has the advantages described below.
- (10) Each
thermoelectric module 11 is independently attached by the corresponding packing 24 to thefirst fluid passage 13 and thesecond fluid passage 15 to form the entire heat exchanger. When the heat exchanger requires a large number of the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17, the heat exchanger may increase the number ofthermoelectric modules 11 accordingly, with eachthermoelectric module 11 having a relatively small number of the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17. This lowers the manufacturing cost of thethermoelectric module 11, which, in turn, lowers the manufacturing cost of the heat exchanger. Further, when one of thethermoelectric modules 11 becomes defective, only the defectivethermoelectric module 11 needs to be replaced. This facilitates maintenance. When the heat exchanger fails to function normally, the defectivethermoelectric module 11 may be located by detecting the voltage or current between the terminals of eachthermoelectric module 11. - It should be apparent to those skilled in the art that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention. Particularly, it should be understood that the present invention may be embodied in the following forms.
- The shape of the
projections 21 a is not limited to a parallelepiped and may be a triangular solid as shown inFIG. 10A or saw-toothed as shown inFIG. 10B . Further, the length of theprojections 21 a may be varied. Alternatively,projections 21 a of different shapes and lengths may be used in combination. The shapes, lengths, and the like of theprojections 21 a that allow for efficient heat exchange vary in accordance with the physical properties (e.g., viscosity) or flow velocity of thefirst fluid 12 andsecond fluid 14. It is thus preferable that experiments be conducted to obtain the shape, length, and the like that allows for a suitable turbulent flow to be easily produced when setting the shape, length, and location of theprojections 21 a. - The shape and length of the
first fluid passage 13 and thesecond fluid passage 15 varies in accordance with the amount of heat generated by thethermoelectric module 11 and the physical properties (e.g., viscosity) and flow velocity of the refrigerant. It is thus preferable that experiments be conducted to obtain the shape, length, and the like that allows for a suitable turbulent flow to be easily produced when setting the shape, length, and location of the first and secondfluid passages - The
thermoelectric module 11 is not limited to a structure in which the valleys and ridges are arranged on both of the heat dissipation side and the heat absorption side. It is only required that the valleys and ridges be arranged on at least the heat dissipation side. The amount of heat generated at the heat dissipation side is approximately four times greater than the heat absorbed at the heat absorption side. This allows for the requirements of the heat exchanger to be easily fulfilled by efficiently exchanging heat at the heat dissipation side. - The
first fluid 12 and thesecond fluid 14 are not limited to an insulative liquid and may be an insulative gas (e.g., air) or a conductive liquid. When using a conductive liquid, an insulative coating must be applied to the surfaces of theelectrodes first fluid 12 and thesecond fluid 14. - The
projections 21 a do not have to be formed by extending parts of theelectrical insulators 21 and may be formed by adhering discrete components to theelectrical insulator 21. In this case, after connecting theelectrodes thermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17, theprojections 21 a may be coupled to theelectrical insulator 21 so as to intersect theelectrodes projections 21 a and theelectrodes projections 21 a. - In the
first fluid passage 13 and thesecond fluid passage 15, thefirst fluid 12 and thesecond fluid 14 do not have to flow in the same direction. Thefirst fluid 12 in thefirst fluid passage 13 and thesecond fluid 14 in thesecond fluid passage 15 may flow in opposite directions (opposed flow). - In the third embodiment, the valleys and ridges on the heat dissipation side and heat absorption side of the
thermoelectric module 11 are provided without arranging the end faces of the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 on the same plane. Further, the end faces of the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 are arranged in rows, the locations of which are alternately varied. However, the present invention is not limited to such a structure. For example, the locations of just one half of the end faces in each row may be alternately varied. Alternatively, the locations of every single end face or every two end faces may be alternately varied. - In the third embodiment, the
electrical insulator 21 that couples the P typethermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 do not necessarily have to be formed at locations corresponding to theprojections 23. - When arranging the valleys and ridges on the heat dissipation side and heat absorption side of the
thermoelectric module 11 without arranging the end faces of the P typethermoelectric semiconductor elements 16 and N typethermoelectric semiconductor elements 17 on the same plane, P typethermoelectric semiconductor elements 16 of two different lengths and N typethermoelectric semiconductor elements 17 of two different lengths may be used. - The matrix array of the P type
thermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 that form thethermoelectric module 11 do not have to include the same number of rows and columns. - The P type
thermoelectric semiconductor elements 16 and the N typethermoelectric semiconductor elements 17 do not have to have the shape of a square pillar and may have the shape of another type of a polygonal pillar or a cylindrical pillar. - In addition to the fourth embodiment, the other embodiments may also include the packing 24 that is formed around the
thermoelectric module 11 and attaches thethermoelectric module 11 between thefirst fluid passage 13 and thesecond fluid passage 15. - The present examples and embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalence of the appended claims.
Claims (6)
1. A heat exchanger comprising:
a thermoelectric module, in which heat exchange is performed between a first fluid flowing through a first fluid passage arranged at a heat dissipation side of the thermoelectric module and a second fluid flowing through a second fluid passage arranged at a heat absorption side of the thermoelectric module, the thermoelectric module including:
a plurality of P type thermoelectric semiconductor elements and a plurality of N type thermoelectric semiconductor elements that are thermally arranged in parallel;
heat dissipation side electrodes formed by planar plates and heat absorption side electrodes formed by planar plates that electrically connect in series the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements;
an electrical insulator that couples the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements so as to impede fluid movement between the first fluid passage and the second fluid passage;
wherein the heat dissipation side electrodes are exposed in the first fluid passage and the heat absorption side electrodes are exposed in the second fluid passage; and
at least the heat dissipation side of the thermoelectric module includes valleys and ridges with the heat dissipation side electrodes being free from projections.
2. The heat exchanger according to claim 1 , wherein the valleys and ridges are formed by part of the electrical insulator projected into the first fluid passage further from the heat dissipation side electrode.
3. The heat exchanger according to claim 2 , the part of the electrical insulator forms a plurality of flow paths in the first fluid passage.
4. The heat exchanger according to claim 2 , wherein the part of the electrical insulator projected into the first fluid passage is formed integrally with part of the electrical insulator that couples the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements.
5. The heat exchanger according to claim 2 , wherein the part of the electrical insulator projected into the first fluid passage is formed discretely from part of the electrical insulator that couples the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements and adhered to said part.
6. The heat exchanger according to claim 1 , wherein the valleys and ridges are formed by coupling the P type thermoelectric semiconductor elements and the N type thermoelectric semiconductor elements with the electrical insulator so that end faces of the P type thermoelectric semiconductor elements and N type thermoelectric semiconductor elements are located on different planes.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009182502A JP2011035305A (en) | 2009-08-05 | 2009-08-05 | Heat exchanger |
JP2009-182502 | 2009-08-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20110030389A1 true US20110030389A1 (en) | 2011-02-10 |
Family
ID=43063497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/850,348 Abandoned US20110030389A1 (en) | 2009-08-05 | 2010-08-04 | Heat exchanger |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110030389A1 (en) |
EP (1) | EP2282356A3 (en) |
JP (1) | JP2011035305A (en) |
CN (1) | CN101995113A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090236087A1 (en) * | 2008-03-19 | 2009-09-24 | Yamaha Corporation | Heat exchange device |
US20140150463A1 (en) * | 2012-12-05 | 2014-06-05 | Kelk Ltd. | Thermoelectric module |
TWI660528B (en) * | 2014-05-13 | 2019-05-21 | 韓商Lg伊諾特股份有限公司 | Heat conversion device |
US10340435B2 (en) | 2015-11-24 | 2019-07-02 | Industrial Technology Research Institute | Thermoelectric conversion device |
US10804453B2 (en) | 2015-07-15 | 2020-10-13 | Mahle International Gmbh | Peltier-element |
US11430936B2 (en) | 2018-08-21 | 2022-08-30 | Lg Chem, Ltd. | Thermoelectric module |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102111604B1 (en) * | 2014-05-13 | 2020-05-15 | 엘지이노텍 주식회사 | Device using thermoelectric moudule |
DE102015213295A1 (en) * | 2015-07-15 | 2017-01-19 | Mahle International Gmbh | Thermoelectric heat exchanger |
KR101806661B1 (en) * | 2016-01-26 | 2017-12-07 | 현대자동차주식회사 | Apparatus for manufacuring the thermoelectric module |
CN106152598A (en) * | 2016-08-22 | 2016-11-23 | 广东富信科技股份有限公司 | Semiconductor refrigeration system |
KR102429506B1 (en) * | 2018-06-26 | 2022-08-05 | 현대자동차주식회사 | Thermoelectric conversion module and method for manufacturing thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2309984A1 (en) * | 1975-04-29 | 1976-11-26 | Cit Alcatel | Thermo electric pile with PN junctions - has spaced plates extending from hot and cold wings, forming circulating paths |
JPH10144967A (en) * | 1996-11-06 | 1998-05-29 | Nhk Spring Co Ltd | Thermoelectric element module for cooling |
CN1236428A (en) * | 1996-11-08 | 1999-11-24 | 松下冷机株式会社 | Thermoelectric module-containing heat exchanger unit and thermoelectric cooling system |
JPH1168173A (en) | 1997-08-08 | 1999-03-09 | Komatsu Ltd | Heat exchanger using thermoelectric module |
JP2000286459A (en) | 1999-03-30 | 2000-10-13 | Aisin Seiki Co Ltd | Thermoelectric conversion device |
US6637210B2 (en) * | 2001-02-09 | 2003-10-28 | Bsst Llc | Thermoelectric transient cooling and heating systems |
DE60207230T2 (en) * | 2001-04-24 | 2006-07-13 | Top-Cool Holding B.V. | ELECTRONIC COOLER |
JP4305252B2 (en) * | 2004-04-02 | 2009-07-29 | 株式会社デンソー | Waste heat recovery device |
CN2773567Y (en) * | 2005-02-04 | 2006-04-19 | 林昌亮 | Soft refrigerating assembly structure |
TWI338390B (en) * | 2007-07-12 | 2011-03-01 | Ind Tech Res Inst | Flexible thermoelectric device and manufacturing method thereof |
-
2009
- 2009-08-05 JP JP2009182502A patent/JP2011035305A/en active Pending
-
2010
- 2010-07-28 EP EP10171074.7A patent/EP2282356A3/en not_active Withdrawn
- 2010-08-03 CN CN2010102493043A patent/CN101995113A/en active Pending
- 2010-08-04 US US12/850,348 patent/US20110030389A1/en not_active Abandoned
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090236087A1 (en) * | 2008-03-19 | 2009-09-24 | Yamaha Corporation | Heat exchange device |
US20140150463A1 (en) * | 2012-12-05 | 2014-06-05 | Kelk Ltd. | Thermoelectric module |
US9170036B2 (en) * | 2012-12-05 | 2015-10-27 | Kelk Ltd. | Thermoelectric module |
TWI660528B (en) * | 2014-05-13 | 2019-05-21 | 韓商Lg伊諾特股份有限公司 | Heat conversion device |
US10804453B2 (en) | 2015-07-15 | 2020-10-13 | Mahle International Gmbh | Peltier-element |
US10340435B2 (en) | 2015-11-24 | 2019-07-02 | Industrial Technology Research Institute | Thermoelectric conversion device |
US11430936B2 (en) | 2018-08-21 | 2022-08-30 | Lg Chem, Ltd. | Thermoelectric module |
Also Published As
Publication number | Publication date |
---|---|
EP2282356A3 (en) | 2013-11-27 |
JP2011035305A (en) | 2011-02-17 |
EP2282356A2 (en) | 2011-02-09 |
CN101995113A (en) | 2011-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20110030389A1 (en) | Heat exchanger | |
JP5511737B2 (en) | Thermoelectric device with improved thermal separation | |
US10991869B2 (en) | Thermoelectric device having a plurality of sealing materials | |
JP4581802B2 (en) | Thermoelectric converter | |
JP2003124531A (en) | Thermoelectric module | |
US20080000511A1 (en) | Thermoelectric conversion device and manufacture method of the same | |
JP2005523589A (en) | Modular thermocouple and laminate | |
US20130327369A1 (en) | Thermoelectric system with mechanically compliant element | |
JP2006179843A (en) | Thermoelectric conversion device and manufacturing method thereof | |
JP4770973B2 (en) | Heat exchanger | |
US20180226557A1 (en) | Thermoelectric heat exchanger | |
CN110880484B (en) | Semiconductor device with a semiconductor device having a plurality of semiconductor chips | |
CN115244764A (en) | Battery pack | |
JP2008066459A (en) | Thermoelectric element module and thermoelectric conversion device employing it | |
JP5742613B2 (en) | Flat type thin film thermoelectric module | |
JPH1168173A (en) | Heat exchanger using thermoelectric module | |
KR20220145759A (en) | Flexible Heater and the Manufacturing Method thereof | |
KR101177266B1 (en) | Heat Exchanger using Thermoelectric Modules | |
US10355191B2 (en) | Thermoelectric heat exchanger | |
EP4012788B1 (en) | Thermoelectric conversion element | |
JP4626263B2 (en) | Thermoelectric conversion device and method for manufacturing the thermoelectric conversion device | |
CN210091843U (en) | PTC thermistor for high voltage and assembly thereof | |
CN110880627B (en) | Battery cooling device for cooling battery or assembly structure with battery cooling device | |
US20240215118A1 (en) | Flexible heater and method for manufacturing same | |
CN113396305B (en) | PTC heater |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MORISAKU, NAOTO;AKIYAMA, HIROKUNI;REEL/FRAME:024798/0390 Effective date: 20100726 |
|
STCB | Information on status: application discontinuation |
Free format text: EXPRESSLY ABANDONED -- DURING EXAMINATION |