US20100252198A1 - Plasma processing apparatus and method - Google Patents
Plasma processing apparatus and method Download PDFInfo
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- US20100252198A1 US20100252198A1 US12/816,440 US81644010A US2010252198A1 US 20100252198 A1 US20100252198 A1 US 20100252198A1 US 81644010 A US81644010 A US 81644010A US 2010252198 A1 US2010252198 A1 US 2010252198A1
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- chemical component
- emitting member
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- 238000000034 method Methods 0.000 title claims abstract description 105
- 239000000126 substance Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 24
- 238000005530 etching Methods 0.000 description 23
- 238000001020 plasma etching Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Definitions
- the present invention relates to a plasma processing apparatus and a plasma processing method for processing a substrate with plasma generated in a process vessel.
- plasma processing by a plasma processing apparatus is widely used for subjecting a semiconductor wafer to processing such as etching and film formation.
- a plasma processing apparatus includes, in a process vessel, upper and lower electrodes facing each other, and a radio-frequency power is supplied to the lower electrode on which, for example, a substrate is placed to generate plasma between the lower electrode and the upper electrode, thereby processing the substrate.
- a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, wherein a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and wherein an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.
- the ions in the plasma is made to enter the chemical component emitting member exposed in the process vessel, thereby causing the chemical component emitting member to emit a chemical component necessary for processing a substrate, so that it is possible to improve the plasma processing.
- the chemical component emitting member may be disposed on a lower surface of the upper electrode.
- the chemical component emitting member may be a focus ring provided around a periphery of the lower electrode.
- the chemical component emitting member may be disposed around the plasma generated in the process vessel.
- the chemical component necessary for processing the substrate is, for example, oxygen.
- the chemical component emitting member is made of, for example, SiO 2 .
- the chemical component necessary for processing the substrate is, for example, fluorine.
- the chemical component emitting member is made of, for example, fluorocarbon resin.
- a plasma processing method in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, wherein a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is disposed in the process vessel in an exposed state, and wherein impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is varied, thereby controlling an emission amount of the component necessary for processing the substrate emitted into the process vessel from the chemical component emitting member.
- the chemical component necessary for processing the substrate is, for example, oxygen.
- the chemical component emitting member is made of, for example, SiO 2 .
- the chemical component necessary for processing the substrate is, for example, fluorine.
- the chemical component emitting member is made of, for example, fluorocarbon resin.
- the present invention by making the ions in the plasma enter the chemical component emitting member exposed in the process vessel, it is possible for the chemical component emitting member to emit the component necessary for processing the substrate, and by the chemical component emitted in this manner, it is possible to improve performance of the plasma processing such as etching rate and etching anisotropy.
- performance of the plasma processing such as etching rate and etching anisotropy.
- impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source, an amount of the ions entering the chemical component emitting member from the plasma is adjusted, so that it is possible to easily control an emission amount of the chemical component necessary for processing the substrate emitted from the chemical component emitting member into the process vessel.
- FIG. 1 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment of the present invention
- FIG. 2 is a circuitry diagram of an impedance varying part
- FIG. 3( a ) and FIG. 3( b ) are views to explain a case where of a hole is formed in a semiconductor wafer by etching, FIG. 3( a ) showing a state where etching with high anisotropy is performed and FIG. 3( b ) showing a state where the hole has a bowing shape;
- FIG. 4 is a circuit diagram showing a modified example of an impedance varying circuit
- FIG. 5 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment where a focus ring serves as a chemical component emitting member;
- FIG. 6 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment where a chemical component emitting member is disposed around plasma generated in a process vessel;
- FIG. 7 is a graph showing etching rate in center and peripheral edge portions of a semiconductor wafer.
- FIG. 8 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment including sensors detecting emission intensity (radical density) of plasma in the center and peripheral edge portions of the semiconductor wafer.
- FIG. 1 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus 1 as a plasma processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a circuitry diagram of an impedance varying part 40 .
- constituent elements having substantially the same functions and structures are denoted by the same reference numerals and symbols, and repeated description thereof will be omitted.
- the plasma etching apparatus 1 includes a process vessel 2 in, for example, a substantially cylindrical shape.
- An inner wall surface of the process vessel 2 is covered by a protective film of, for example, alumina.
- the process vessel 2 is electrically grounded.
- a columnar electrode support table 11 is provided via an insulation plate 10 .
- a lower electrode 12 as a radio-frequency electrode serving also as a mounting table for placing a substrate W thereon is provided.
- a center portion of an upper surface of the lower electrode 12 protrudes in a columnar shape, and the substrate (semiconductor wafer) W is held on this protruding portion 12 a .
- a ring-shaped focus ring 13 made of quartz is provided around a periphery of the protruding portion 12 a of the lower electrode 12 .
- an upper electrode 20 in, for example, a substantially disk shape is attached so as to make a pair with the lower electrode 12 .
- a ring-shaped insulator 21 is interposed to electrically insulate the upper electrode 20 from the ceiling wall portion of the process vessel 2 .
- a first radio-frequency line 27 supplying a radio-frequency power for plasma generation from a first radio-frequency power source 26 via a matching circuit 25 is electrically connected to the upper electrode 20 .
- This first radio-frequency power source 26 generates, for example, a 60 MHz radio-frequency power and supplies the radio-frequency power for plasma generation to the upper electrode 20 .
- a large number of gas ejecting holes 30 are formed in a lower surface of the upper electrode 20 .
- the gas ejecting holes 30 communicate with a gas supply source 32 via a gas supply pipe 31 connected to an upper surface of the upper electrode 20 .
- the gas supply source 32 stores a process gas for etching.
- the process gas introduced from the gas supply source 32 into the upper electrode 20 through the gas supply pipe 31 is supplied into the process vessel 2 through the plurality of gas ejecting holes 30 .
- a chemical component emitting member 33 which is a feature of the present invention is provided in an exposed state in the process vessel 2 .
- This chemical component emitting member 33 is attached in electrical continuity to the upper electrode 20 , and the chemical component emitting member 33 and the upper electrode 20 are equal in potential.
- plasma P is generated in the process vessel 2 by supply of the radio-frequency power to the upper electrode 20 and the lower electrode 12 , ions in the plasma P are made to enter the chemical component emitting member 33 , thereby causing the chemical component emitting member 33 to emit a component necessary for processing the semiconductor wafer W into the process vessel 2 .
- a material of the chemical component emitting member 33 can be, for example, SiO 2 , though differing depending on a component to be emitted into the process vessel 2 .
- the chemical component emitting member 33 thus made of SiO 2 can emit oxygen as a component necessary for processing the semiconductor wafer W into the process vessel 2 , when the ions in the plasma P enter the chemical component emitting member 33 .
- the chemical component emitting member 33 can be made of, for example, fluorocarbon resin.
- the chemical component emitting member 33 thus made of fluorocarbon resin can emit fluorine as a component necessary for processing the semiconductor wafer W into the process vessel 2 , when ions in the plasma P enter the chemical component emitting member 33 .
- the chemical component emitting member 33 of the embodiment shown in FIG. 1 is attached to cover the center portion of the lower surface of the upper electrode 20 .
- holes for passing the process gas therethrough are formed in the chemical component emitting member 33 , in correspondence to the gas ejecting holes 30 formed in the lower surface of the upper electrode 20 . Therefore, the process gas introduced into the upper electrode 20 from the gas supply source 32 is smoothly supplied into the process vessel 2 through the plurality of gas ejecting holes 30 without being obstructed by the chemical component emitting member 33 .
- an impedance varying circuit 41 including an impedance varying part 40 varying impedance on the chemical component emitting member 33 side of the plasma P generated in the process vessel 2 to frequency of a second radio-frequency power source 51 is connected to a position between the upper electrode 20 and the matching circuit 25 in the aforesaid radio-frequency line 27 .
- the chemical component emitting member 33 and the upper electrode 20 are in electrical continuity to each other and are equal in potential, as described above.
- the impedance varying circuit 41 is connected to the first radio-frequency line 27 for supplying the radio-frequency power to the upper electrode 20 from the first radio-frequency power source 26 , so that the impedance varying part 40 can vary the impedance on the chemical component emitting member 33 side of the plasma P generated in the process vessel 2 (equal to impedance on the upper electrode 20 side) to frequency of the first radio-frequency power source 26 .
- the impedance varying part 40 is included in the impedance circuit 41 connecting the first radio-frequency line 27 and the ground side and is composed of a fixed coil 42 with inductance of, for example, about 200 nH and a variable capacitor 43 which are serially connected.
- a fixed coil 42 with inductance of, for example, about 200 nH and a variable capacitor 43 which are serially connected.
- a second radio-frequency line 52 for supplying a radio-frequency power for bias from the second radio-frequency power source 51 via a matching circuit 50 is electrically connected to the lower electrode 12 .
- This second radio-frequency power source 51 generates a radio-frequency power with a frequency lower than that of the first radio-frequency power source 26 , for example, a 13.56 MHz radio-frequency power, and supplies the radio-frequency power for bias to the lower electrode 12 .
- the plasma P is sometimes generated in the process vessel 2 also by this second radio-frequency power source 51 .
- an exhaust pipe 60 connected to an exhaust mechanism (not shown) is connected to a lower portion of the process vessel 2 .
- an exhaust pipe 60 connected to an exhaust mechanism (not shown) is connected to a lower portion of the process vessel 2 .
- the substrate W is carried into the process vessel 2 to be placed on the lower electrode 12 as shown in FIG. 1 .
- the inside of the process vessel 2 is exhausted through the exhaust pipe 60 to be reduced in pressure, and further a predetermined process gas supplied from the gas supply source 32 is supplied into the process vessel 2 through the gas ejecting holes 30 .
- the first radio-frequency power source 26 supplies the radio-frequency power for plasma generation of, for example, 60 MHz to the upper electrode 20 .
- the second radio-frequency power source 51 supplies the radio-frequency power for bias of, for example, 13.56 MHz to the lower electrode 12 .
- the radio-frequency power is applied between the lower electrode 12 and the upper electrode 20 and the plasma P is generated between the lower electrode 12 and the upper electrode 20 in the process vessel 2 .
- the plasma P active species, ions, and so on are generated from the process gas, so that a surface film of the semiconductor wafer W placed on the lower electrode 12 is etched.
- the supply of the radio-frequency powers to the upper electrode 20 and the lower electrode 12 and the supply of the process gas into the process vessel 2 are stopped, the wafer W is carried out of the process vessel 2 , and a series of the plasma etching processes is finished.
- the capacitance of the variable capacitor 43 is adjusted in the above-described impedance varying part 40 connected to the chemical component emitting member 33 , whereby the impedance on the chemical component emitting member 33 side (upper electrode 20 side) of the plasma P is changed so as to resonate the frequency of the second radio-frequency power source 51 .
- the impedance on the chemical component emitting member 33 side of the plasma P is thus changed, so that the ions in the plasma P are made to enter the chemical component emitting member 33 . Consequently, the chemical component emitting member 33 can be caused to emit a component necessary for processing the semiconductor wafer W into the process vessel 2 .
- appropriately selecting a material of the chemical component emitting member 33 can change the component which is emitted into the process vessel 2 from the chemical component emitting member 33 by the entrance of the ions.
- SiO 2 is used as the material of the chemical component emitting member 33 . This enables the chemical component emitting member 33 to emit oxygen into the process vessel 2 when the ions in the plasma P enter the chemical component emitting member 33 .
- the hole 70 formed in the surface of the semiconductor wafer W has a bowing shape.
- fluorocarbon resin for instance, is used as the material of the chemical component emitting member 33 . Consequently, when the ions in the plasma P enter the chemical component emitting member 33 , the chemical component emitting member 33 emits fluorine indispensable for etching the oxide film into the process vessel 2 , which can increase etching rate.
- the plasma etching apparatus 1 of this embodiment by appropriately selecting the material of the chemical component emitting member 33 disposed in an exposed state in the process vessel 2 , it is possible to cause the chemical component emitting member 33 to emit the component necessary for processing the semiconductor wafer W when the ions in the plasma P are made to enter the chemical component emitting member 33 . Consequently, anisotropy of the etching can be enhanced and the etching rate can be also increased.
- concentration of the process gas or the ion generation state in the process vessel 2 is monitored, and based on the monitoring result, the impedance on the chemical component emitting member 33 side of the plasma P generated in the process vessel 2 to the frequency of the second radio-frequency power source 51 is varied to adjust an incident amount of the ions entering the chemical component emitting member 3 from the plasma P. Consequently, it is possible to easily control an emission amount of the component such as oxygen or fluorine influencing the plasma processing, which is emitted into the process vessel 2 from the chemical component emitting member 33 .
- FIG. 4 is a circuit diagram showing another structure of the impedance varying part 40 .
- the impedance varying part 40 shown in FIG. 4 has circuitry in which a fixed capacitor 75 , a fixed coil 76 , and a variable capacitor 77 are serially connected and a fixed coil 78 is connected in parallel to the variable capacitor 77 , in the impedance varying circuit 41 connecting the first radio-frequency line 27 and the ground side.
- the impedance varying part 40 shown in FIG. 4 can also easily vary the impedance on the chemical component emitting member 33 side of the plasma P to the frequency of the second radio-frequency power source 51 , by varying the capacitance of the variable capacitor 77 . Further, connecting the fixed coil 78 in parallel to the variable capacitor 77 facilitates fine adjustment. Further, providing the fixed capacitor 75 makes it possible to shift radio-frequency voltage flowing to the ground side from the impedance varying circuit 41 , which contributes to the protection of the impedance varying part 40 .
- FIG. 1 the case is described where the chemical component emitting member 33 is disposed on the lower surface of the upper electrode 20 , but this is not restrictive, but the chemical component emitting member may be disposed at any place exposed to the plasma P generated in the process vessel 2 .
- FIG. 5 shows an example where the focus ring 13 disposed around the periphery of the lower electrode is used as the chemical component emitting member.
- the impedance varying circuit 41 including the impedance varying part 40 is connected to the focus ring 13 , thereby varying the impedance on the focus ring 13 (chemical component emitting member) side of the plasma P generated in the process vessel 2 to frequency of the first radio-frequency power source 26 or the second radio-frequency power source 51 .
- the focus ring 13 by making the ions in the plasma P enter the focus ring 13 , it is possible to cause the focus ring 13 to emit the component such as oxygen or fluorine necessary for processing the semiconductor wafer W into the process vessel 2 .
- a member (focus ring 13 ) originally provided in the process vessel 2 for other purpose may be used as the chemical component emitting member.
- a member other than the focus ring 13 may be used.
- FIG. 6 shows an example where a cylindrical chemical component emitting member 80 is disposed to surround the plasma P generated in the process vessel 2 .
- the chemical component emitting member 80 is attached to the ceiling portion of the process vessel 2 via an insulating member 81 .
- the impedance varying circuit 41 including the impedance varying part 40 is connected to the chemical component emitting member 80 , thereby varying impedance on the chemical component emitting member 80 side of the plasma P generated in the process vessel 2 to frequency of the first radio-frequency power source 26 or the second radio-frequency power source 51 .
- the chemical component emitting member 80 by making the ions in the plasma P enter the chemical component emitting member 80 surrounding the plasma P, it is possible to cause the chemical component emitting member 80 to emit the component such as oxygen or fluorine necessary for processing the semiconductor wafer W from the plasma P into the process vessel 2 .
- etching rate E/R is higher in the center of the semiconductor wafer W and etching rate E/R is lower in a peripheral edge portion of the semiconductor wafer W, as shown in FIG. 7 .
- the component such as oxygen or fluorine is emitted from the focus ring 13 or the chemical component emitting member 80 disposed around the plasma P, thereby increasing the etching rate E/R in the peripheral edge portion of the semiconductor wafer W, so that in-plane processing uniformity can be enhanced.
- the chemical component emitting member 33 disposed on the center of the lower surface of the upper electrode 20 is caused to emit the component such as oxygen or fluorine.
- the component such as oxygen or fluorine is emitted from the chemical component emitting member 33 provided on the center of the lower surface of the upper electrode 20 as shown in FIG. 1 , thereby increasing the etching rate E/R in the center portion of the semiconductor wafer W, so that in-plane uniformity of the processing can be enhanced.
- sensors 90 , 91 detecting emission intensity (radical density) of the plasma P in the process vessel 2 are mounted in a center portion and a peripheral edge portion of the ceiling portion of the process vessel 2 .
- the emission intensities in the center portion and the peripheral edge portion of the semiconductor wafer W are inputted from these sensors 90 , 91 to a computing device 93 via a spectroscope 92 .
- the computing device 93 computes an adjustment angle of the variable capacitor 43 of the impedance varying part 40 which is to be controlled, based on a ratio of the emission intensities in the center portion and the peripheral portion of the semiconductor wafer W.
- variable capacitor 43 While the variable capacitor 43 is controlled based on thus computed adjustment angle, the ions in the plasma P are made to enter the chemical component emitting member 33 , which can equalize the emission intensities (radical densities) in the center portion and the peripheral edge portion of the semiconductor wafer W. Consequently, uniform plasma processing is enabled.
- the chemical component emitting member 33 shown in FIG. 1 , disposed on the lower surface of the upper electrode 20
- the chemical component emitting member, shown in FIG. 5 constituted by the focus ring 13
- the chemical component emitting member 80 shown in FIG. 6 , disposed around the plasma P may be appropriately combined.
- the radio-frequency power sources 26 , 51 are connected to the upper electrode 20 and the lower electrode 12 respectively, but this is not restrictive.
- the present invention is of course applicable to a case where a radio-frequency power source is connected to only one of the electrodes.
- the present invention is applied to the plasma etching apparatus 1 , but the present invention is also applicable to a plasma processing apparatus for performing substrate processing other than etching, for example, for performing film formation.
- the substrate processed in the plasma processing apparatus of the present invention may be any of a semiconductor wafer, an organic EL substrate, a substrate for FPD (flat panel display), and the like.
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Abstract
In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to an electrode disposed in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.
Description
- This application is a divisional of U.S. patent application Ser. No. 11/691,678, filed Mar. 27, 2007, and contains subject matter related to Japanese Patent Application No. 2006-097446, filed on Mar. 31, 2006 and Provisional Application No. 60/792,317, filed on Apr. 17, 2006, the entire contents of which being incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates to a plasma processing apparatus and a plasma processing method for processing a substrate with plasma generated in a process vessel.
- 2. Description of the Related Art
- In manufacturing processes of, for example, a semiconductor device, a liquid crystal display device, and the like, plasma processing by a plasma processing apparatus is widely used for subjecting a semiconductor wafer to processing such as etching and film formation. Such a plasma processing apparatus includes, in a process vessel, upper and lower electrodes facing each other, and a radio-frequency power is supplied to the lower electrode on which, for example, a substrate is placed to generate plasma between the lower electrode and the upper electrode, thereby processing the substrate.
- In this plasma processing apparatus, conventionally, in order to enhance anisotropy of etching and increase etching rate and deposition rate for increased product yields, various process gases have been used and pressure and temperature of the process gases have been adjusted. Further, the present applicant has disclosed a method to keep high in-plane uniformity of plasma processing by varying impedance on an electrode side of the plasma generated in the process vessel to frequency of a radio-frequency power source (see, for example, Japanese Patent Application Laid-open No. 2004-96066).
- For members such as the upper electrode and the lower electrode exposed in the process vessel, a material from which as little contamination as possible is generated by the plasma generated in the process vessel is used. As a measure for preventing these members from being affected by the plasma, their sidewall inner surfaces exposed in the process vessel are anodized, for instance. Thus, it has been a conventional tendency that the emission of components necessary for processing the substrate from the members exposed in the process vessel is reduced as much as possible.
- It is an object of the present invention to improve plasma processing by causing a member exposed in a process vessel to emit a component necessary for processing a substrate when the substrate is processed with plasma generated in the process vessel.
- To attain the above object, according to the present invention, there is provided a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, wherein a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and wherein an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.
- According to this plasma processing apparatus, the ions in the plasma is made to enter the chemical component emitting member exposed in the process vessel, thereby causing the chemical component emitting member to emit a chemical component necessary for processing a substrate, so that it is possible to improve the plasma processing.
- In this plasma processing apparatus, the chemical component emitting member may be disposed on a lower surface of the upper electrode. Alternatively, the chemical component emitting member may be a focus ring provided around a periphery of the lower electrode. Alternatively, the chemical component emitting member may be disposed around the plasma generated in the process vessel.
- The chemical component necessary for processing the substrate is, for example, oxygen. In this case, the chemical component emitting member is made of, for example, SiO2.
- Alternatively, the chemical component necessary for processing the substrate is, for example, fluorine. In this case, the chemical component emitting member is made of, for example, fluorocarbon resin.
- According to another aspect of the present invention, there is provided a plasma processing method in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, wherein a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is disposed in the process vessel in an exposed state, and wherein impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is varied, thereby controlling an emission amount of the component necessary for processing the substrate emitted into the process vessel from the chemical component emitting member.
- In this plasma processing method, the chemical component necessary for processing the substrate is, for example, oxygen. In this case, the chemical component emitting member is made of, for example, SiO2. Alternatively, the chemical component necessary for processing the substrate is, for example, fluorine. In this case, the chemical component emitting member is made of, for example, fluorocarbon resin.
- According to the present invention, by making the ions in the plasma enter the chemical component emitting member exposed in the process vessel, it is possible for the chemical component emitting member to emit the component necessary for processing the substrate, and by the chemical component emitted in this manner, it is possible to improve performance of the plasma processing such as etching rate and etching anisotropy. In this case, by varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source, an amount of the ions entering the chemical component emitting member from the plasma is adjusted, so that it is possible to easily control an emission amount of the chemical component necessary for processing the substrate emitted from the chemical component emitting member into the process vessel.
-
FIG. 1 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment of the present invention; -
FIG. 2 is a circuitry diagram of an impedance varying part; -
FIG. 3( a) andFIG. 3( b) are views to explain a case where of a hole is formed in a semiconductor wafer by etching,FIG. 3( a) showing a state where etching with high anisotropy is performed andFIG. 3( b) showing a state where the hole has a bowing shape; -
FIG. 4 is a circuit diagram showing a modified example of an impedance varying circuit; -
FIG. 5 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment where a focus ring serves as a chemical component emitting member; -
FIG. 6 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment where a chemical component emitting member is disposed around plasma generated in a process vessel; -
FIG. 7 is a graph showing etching rate in center and peripheral edge portions of a semiconductor wafer; and -
FIG. 8 is a vertical cross-sectional view showing a schematic construction of a plasma etching apparatus according to an embodiment including sensors detecting emission intensity (radical density) of plasma in the center and peripheral edge portions of the semiconductor wafer. - Hereinafter, preferred embodiments of the present invention will be described.
FIG. 1 is a vertical cross-sectional view showing a schematic construction of aplasma etching apparatus 1 as a plasma processing apparatus according to an embodiment of the present invention.FIG. 2 is a circuitry diagram of animpedance varying part 40. In the present specification and drawings, constituent elements having substantially the same functions and structures are denoted by the same reference numerals and symbols, and repeated description thereof will be omitted. - As shown in
FIG. 1 , theplasma etching apparatus 1 includes aprocess vessel 2 in, for example, a substantially cylindrical shape. An inner wall surface of theprocess vessel 2 is covered by a protective film of, for example, alumina. Theprocess vessel 2 is electrically grounded. - For example, in a center bottom portion in the
process vessel 2, a columnar electrode support table 11 is provided via aninsulation plate 10. On the electrode support table 11, alower electrode 12 as a radio-frequency electrode serving also as a mounting table for placing a substrate W thereon is provided. For example, a center portion of an upper surface of thelower electrode 12 protrudes in a columnar shape, and the substrate (semiconductor wafer) W is held on this protrudingportion 12 a. A ring-shaped focus ring 13 made of quartz is provided around a periphery of theprotruding portion 12 a of thelower electrode 12. - In a ceiling portion facing the
lower electrode 12 in theprocess vessel 2, anupper electrode 20 in, for example, a substantially disk shape is attached so as to make a pair with thelower electrode 12. In a contact portion between theupper electrode 20 and a ceiling wall portion of theprocess vessel 2, a ring-shaped insulator 21 is interposed to electrically insulate theupper electrode 20 from the ceiling wall portion of theprocess vessel 2. - A first radio-
frequency line 27 supplying a radio-frequency power for plasma generation from a first radio-frequency power source 26 via a matchingcircuit 25 is electrically connected to theupper electrode 20. This first radio-frequency power source 26 generates, for example, a 60 MHz radio-frequency power and supplies the radio-frequency power for plasma generation to theupper electrode 20. - For example, a large number of gas ejecting
holes 30 are formed in a lower surface of theupper electrode 20. The gas ejectingholes 30 communicate with agas supply source 32 via agas supply pipe 31 connected to an upper surface of theupper electrode 20. Thegas supply source 32 stores a process gas for etching. The process gas introduced from thegas supply source 32 into theupper electrode 20 through thegas supply pipe 31 is supplied into theprocess vessel 2 through the plurality of gas ejectingholes 30. - Further, on a center portion of the lower surface of the
upper electrode 20, a chemicalcomponent emitting member 33 which is a feature of the present invention is provided in an exposed state in theprocess vessel 2. This chemicalcomponent emitting member 33 is attached in electrical continuity to theupper electrode 20, and the chemicalcomponent emitting member 33 and theupper electrode 20 are equal in potential. As will be described later, when plasma P is generated in theprocess vessel 2 by supply of the radio-frequency power to theupper electrode 20 and thelower electrode 12, ions in the plasma P are made to enter the chemicalcomponent emitting member 33, thereby causing the chemicalcomponent emitting member 33 to emit a component necessary for processing the semiconductor wafer W into theprocess vessel 2. - A material of the chemical
component emitting member 33 can be, for example, SiO2, though differing depending on a component to be emitted into theprocess vessel 2. The chemicalcomponent emitting member 33 thus made of SiO2 can emit oxygen as a component necessary for processing the semiconductor wafer W into theprocess vessel 2, when the ions in the plasma P enter the chemicalcomponent emitting member 33. - Alternatively, the chemical
component emitting member 33 can be made of, for example, fluorocarbon resin. The chemicalcomponent emitting member 33 thus made of fluorocarbon resin can emit fluorine as a component necessary for processing the semiconductor wafer W into theprocess vessel 2, when ions in the plasma P enter the chemicalcomponent emitting member 33. - The chemical
component emitting member 33 of the embodiment shown inFIG. 1 is attached to cover the center portion of the lower surface of theupper electrode 20. However, holes for passing the process gas therethrough are formed in the chemicalcomponent emitting member 33, in correspondence to the gas ejecting holes 30 formed in the lower surface of theupper electrode 20. Therefore, the process gas introduced into theupper electrode 20 from thegas supply source 32 is smoothly supplied into theprocess vessel 2 through the plurality of gas ejecting holes 30 without being obstructed by the chemicalcomponent emitting member 33. - Further, an
impedance varying circuit 41 including animpedance varying part 40 varying impedance on the chemicalcomponent emitting member 33 side of the plasma P generated in theprocess vessel 2 to frequency of a second radio-frequency power source 51 is connected to a position between theupper electrode 20 and thematching circuit 25 in the aforesaid radio-frequency line 27. Note that in this embodiment, the chemicalcomponent emitting member 33 and theupper electrode 20 are in electrical continuity to each other and are equal in potential, as described above. Therefore, in this embodiment, theimpedance varying circuit 41 is connected to the first radio-frequency line 27 for supplying the radio-frequency power to theupper electrode 20 from the first radio-frequency power source 26, so that theimpedance varying part 40 can vary the impedance on the chemicalcomponent emitting member 33 side of the plasma P generated in the process vessel 2 (equal to impedance on theupper electrode 20 side) to frequency of the first radio-frequency power source 26. - As shown in
FIG. 2 , theimpedance varying part 40 is included in theimpedance circuit 41 connecting the first radio-frequency line 27 and the ground side and is composed of a fixedcoil 42 with inductance of, for example, about 200 nH and avariable capacitor 43 which are serially connected. By varying capacitance of thevariable capacitor 43 in theimpedance varying part 40, it is possible to appropriately vary the impedance on the chemicalcomponent emitting member 33 side of the plasma P generated in theprocess vessel 2 to frequency of the second radio-frequency power source 51. - A second radio-
frequency line 52 for supplying a radio-frequency power for bias from the second radio-frequency power source 51 via amatching circuit 50 is electrically connected to thelower electrode 12. This second radio-frequency power source 51 generates a radio-frequency power with a frequency lower than that of the first radio-frequency power source 26, for example, a 13.56 MHz radio-frequency power, and supplies the radio-frequency power for bias to thelower electrode 12. Incidentally, the plasma P is sometimes generated in theprocess vessel 2 also by this second radio-frequency power source 51. - As shown in
FIG. 1 , anexhaust pipe 60 connected to an exhaust mechanism (not shown) is connected to a lower portion of theprocess vessel 2. By vacuuming the inside of theprocess vessel 2 through theexhaust pipe 60, it is possible to reduce the pressure inside theprocess vessel 2 to a predetermined pressure. - Next, the operation of the
plasma etching apparatus 1 as constructed above will be described. - To perform plasma etching in this
plasma etching apparatus 1, first, the substrate W is carried into theprocess vessel 2 to be placed on thelower electrode 12 as shown inFIG. 1 . Then, the inside of theprocess vessel 2 is exhausted through theexhaust pipe 60 to be reduced in pressure, and further a predetermined process gas supplied from thegas supply source 32 is supplied into theprocess vessel 2 through the gas ejecting holes 30. Further, the first radio-frequency power source 26 supplies the radio-frequency power for plasma generation of, for example, 60 MHz to theupper electrode 20. Further, the second radio-frequency power source 51 supplies the radio-frequency power for bias of, for example, 13.56 MHz to thelower electrode 12. - Consequently, the radio-frequency power is applied between the
lower electrode 12 and theupper electrode 20 and the plasma P is generated between thelower electrode 12 and theupper electrode 20 in theprocess vessel 2. By this plasma P, active species, ions, and so on are generated from the process gas, so that a surface film of the semiconductor wafer W placed on thelower electrode 12 is etched. After the etching for a predetermined time, the supply of the radio-frequency powers to theupper electrode 20 and thelower electrode 12 and the supply of the process gas into theprocess vessel 2 are stopped, the wafer W is carried out of theprocess vessel 2, and a series of the plasma etching processes is finished. - Here, during the above plasma etching, the capacitance of the
variable capacitor 43 is adjusted in the above-describedimpedance varying part 40 connected to the chemicalcomponent emitting member 33, whereby the impedance on the chemicalcomponent emitting member 33 side (upper electrode 20 side) of the plasma P is changed so as to resonate the frequency of the second radio-frequency power source 51. - The impedance on the chemical
component emitting member 33 side of the plasma P is thus changed, so that the ions in the plasma P are made to enter the chemicalcomponent emitting member 33. Consequently, the chemicalcomponent emitting member 33 can be caused to emit a component necessary for processing the semiconductor wafer W into theprocess vessel 2. - In this case, appropriately selecting a material of the chemical
component emitting member 33 can change the component which is emitted into theprocess vessel 2 from the chemicalcomponent emitting member 33 by the entrance of the ions. As an example, in a case where a Si substrate as the semiconductor wafer W is etched, SiO2 is used as the material of the chemicalcomponent emitting member 33. This enables the chemicalcomponent emitting member 33 to emit oxygen into theprocess vessel 2 when the ions in the plasma P enter the chemicalcomponent emitting member 33. - Here, with reference to
FIGS. 3( a), 3(b), a case where O2 and SF6 or HBr are used as the process gas and the Si substrate as the semiconductor wafer W is etched to form ahole 70 will be described. By making the ions in the plasma P enter the chemicalcomponent emitting member 33 made of SiO2 to cause the chemicalcomponent emitting member 33 to emit oxygen into theprocess vessel 2, it is possible to supply sufficient oxygen into theprocess vessel 2. Consequently, as shown inFIG. 3( a), oxygen in theprocess vessel 2 reacts with Si, so that a Si oxide film (SiO2) 71 is formed on a sidewall surface of thehole 70 formed by the etching. Theoxide film 71 protects the sidewall surface of thehole 70, which makes it possible to etch a surface of the semiconductor wafer W with high vertical anisotropy. - On the other hand, if oxygen is not sufficiently supplied into the
process vessel 2, the sidewall surface of thehole 70 is not protected, resulting in isotropic etching as shown inFIG. 3( b). In such a case, thehole 70 formed in the surface of the semiconductor wafer W has a bowing shape. - Alternatively, for example, in a case where an oxide film (SiO2) formed on the surface of a Si substrate as the semiconductor wafer W is etched, fluorocarbon resin, for instance, is used as the material of the chemical
component emitting member 33. Consequently, when the ions in the plasma P enter the chemicalcomponent emitting member 33, the chemicalcomponent emitting member 33 emits fluorine indispensable for etching the oxide film into theprocess vessel 2, which can increase etching rate. - According to the
plasma etching apparatus 1 of this embodiment, by appropriately selecting the material of the chemicalcomponent emitting member 33 disposed in an exposed state in theprocess vessel 2, it is possible to cause the chemicalcomponent emitting member 33 to emit the component necessary for processing the semiconductor wafer W when the ions in the plasma P are made to enter the chemicalcomponent emitting member 33. Consequently, anisotropy of the etching can be enhanced and the etching rate can be also increased. - In this case, for example, concentration of the process gas or the ion generation state in the
process vessel 2 is monitored, and based on the monitoring result, the impedance on the chemicalcomponent emitting member 33 side of the plasma P generated in theprocess vessel 2 to the frequency of the second radio-frequency power source 51 is varied to adjust an incident amount of the ions entering the chemical component emitting member 3 from the plasma P. Consequently, it is possible to easily control an emission amount of the component such as oxygen or fluorine influencing the plasma processing, which is emitted into theprocess vessel 2 from the chemicalcomponent emitting member 33. - Hitherto, an example of a preferred embodiment of the present invention has been described, but the present invention is not limited to the form exemplified here. It is obvious that those skilled in the art could reach various modified examples or corrected examples within a range of the spirit described in the claims, and it should be naturally understood that these examples also belong to the technical scope of the present invention. For example, in
FIG. 2 , the case is described where the serial circuit of thevariable capacitor 43 and the fixedcoil 42 is used as theimpedance varying part 40, but theimpedance varying part 40 is not limited to this and may be any circuit, providing that it can vary the impedance on the chemicalcomponent emitting member 33 side of the plasma P to the frequency of the second radio-frequency power source 51. -
FIG. 4 is a circuit diagram showing another structure of theimpedance varying part 40. Theimpedance varying part 40 shown inFIG. 4 has circuitry in which a fixedcapacitor 75, a fixedcoil 76, and avariable capacitor 77 are serially connected and a fixedcoil 78 is connected in parallel to thevariable capacitor 77, in theimpedance varying circuit 41 connecting the first radio-frequency line 27 and the ground side. - The
impedance varying part 40 shown inFIG. 4 can also easily vary the impedance on the chemicalcomponent emitting member 33 side of the plasma P to the frequency of the second radio-frequency power source 51, by varying the capacitance of thevariable capacitor 77. Further, connecting the fixedcoil 78 in parallel to thevariable capacitor 77 facilitates fine adjustment. Further, providing the fixedcapacitor 75 makes it possible to shift radio-frequency voltage flowing to the ground side from theimpedance varying circuit 41, which contributes to the protection of theimpedance varying part 40. - In
FIG. 1 , the case is described where the chemicalcomponent emitting member 33 is disposed on the lower surface of theupper electrode 20, but this is not restrictive, but the chemical component emitting member may be disposed at any place exposed to the plasma P generated in theprocess vessel 2.FIG. 5 shows an example where thefocus ring 13 disposed around the periphery of the lower electrode is used as the chemical component emitting member. In this case, theimpedance varying circuit 41 including theimpedance varying part 40 is connected to thefocus ring 13, thereby varying the impedance on the focus ring 13 (chemical component emitting member) side of the plasma P generated in theprocess vessel 2 to frequency of the first radio-frequency power source 26 or the second radio-frequency power source 51. - According to the example shown in
FIG. 5 , by making the ions in the plasma P enter thefocus ring 13, it is possible to cause thefocus ring 13 to emit the component such as oxygen or fluorine necessary for processing the semiconductor wafer W into theprocess vessel 2. In this manner, a member (focus ring 13) originally provided in theprocess vessel 2 for other purpose may be used as the chemical component emitting member. Needless to say, a member other than thefocus ring 13 may be used. -
FIG. 6 shows an example where a cylindrical chemicalcomponent emitting member 80 is disposed to surround the plasma P generated in theprocess vessel 2. In this example, the chemicalcomponent emitting member 80 is attached to the ceiling portion of theprocess vessel 2 via an insulatingmember 81. Further, theimpedance varying circuit 41 including theimpedance varying part 40 is connected to the chemicalcomponent emitting member 80, thereby varying impedance on the chemicalcomponent emitting member 80 side of the plasma P generated in theprocess vessel 2 to frequency of the first radio-frequency power source 26 or the second radio-frequency power source 51. - According to the example shown in
FIG. 6 , by making the ions in the plasma P enter the chemicalcomponent emitting member 80 surrounding the plasma P, it is possible to cause the chemicalcomponent emitting member 80 to emit the component such as oxygen or fluorine necessary for processing the semiconductor wafer W from the plasma P into theprocess vessel 2. - Incidentally, for example, when the semiconductor wafer W is etched, there sometimes occurs such a situation that etching rate E/R is higher in the center of the semiconductor wafer W and etching rate E/R is lower in a peripheral edge portion of the semiconductor wafer W, as shown in
FIG. 7 . In such a case, according to the example shown inFIG. 5 and the example shown inFIG. 6 , the component such as oxygen or fluorine is emitted from thefocus ring 13 or the chemicalcomponent emitting member 80 disposed around the plasma P, thereby increasing the etching rate E/R in the peripheral edge portion of the semiconductor wafer W, so that in-plane processing uniformity can be enhanced. - On the other hand, according to the example previously described with reference to
FIG. 1 , the chemicalcomponent emitting member 33 disposed on the center of the lower surface of theupper electrode 20 is caused to emit the component such as oxygen or fluorine. For example, in a case where the semiconductor wafer W is etched, there may be a case where the etching rate E/R is lower in the center of the semiconductor wafer W and the etching rate E/R is higher in the peripheral edge portion of the semiconductor wafer W (a case reverse to that shown inFIG. 7 ). In such a case, the component such as oxygen or fluorine is emitted from the chemicalcomponent emitting member 33 provided on the center of the lower surface of theupper electrode 20 as shown inFIG. 1 , thereby increasing the etching rate E/R in the center portion of the semiconductor wafer W, so that in-plane uniformity of the processing can be enhanced. - For example, as shown in
FIG. 8 ,sensors process vessel 2 are mounted in a center portion and a peripheral edge portion of the ceiling portion of theprocess vessel 2. The emission intensities in the center portion and the peripheral edge portion of the semiconductor wafer W are inputted from thesesensors computing device 93 via aspectroscope 92. Thecomputing device 93 computes an adjustment angle of thevariable capacitor 43 of theimpedance varying part 40 which is to be controlled, based on a ratio of the emission intensities in the center portion and the peripheral portion of the semiconductor wafer W. While thevariable capacitor 43 is controlled based on thus computed adjustment angle, the ions in the plasma P are made to enter the chemicalcomponent emitting member 33, which can equalize the emission intensities (radical densities) in the center portion and the peripheral edge portion of the semiconductor wafer W. Consequently, uniform plasma processing is enabled. - Incidentally, the chemical
component emitting member 33, shown inFIG. 1 , disposed on the lower surface of theupper electrode 20, the chemical component emitting member, shown inFIG. 5 , constituted by thefocus ring 13, and the chemicalcomponent emitting member 80, shown inFIG. 6 , disposed around the plasma P may be appropriately combined. - The above embodiments have described the examples where the radio-
frequency power sources upper electrode 20 and thelower electrode 12 respectively, but this is not restrictive. The present invention is of course applicable to a case where a radio-frequency power source is connected to only one of the electrodes. Further, in the above-descried embodiments, the present invention is applied to theplasma etching apparatus 1, but the present invention is also applicable to a plasma processing apparatus for performing substrate processing other than etching, for example, for performing film formation. Further, the substrate processed in the plasma processing apparatus of the present invention may be any of a semiconductor wafer, an organic EL substrate, a substrate for FPD (flat panel display), and the like.
Claims (8)
1. A plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to an electrode disposed in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed,
wherein a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and
wherein an impedance varying circuit varying impedance on said chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to said chemical component emitting member.
2. The plasma processing apparatus according to claim 1 ,
wherein said chemical component emitting member is disposed on a lower surface of the electrode.
3. The plasma processing apparatus according to claim 1 ,
wherein said chemical component emitting member is a focus ring provided around a periphery of the electrode.
4. The plasma processing apparatus according to claim 1 ,
wherein said chemical component emitting member is disposed around the plasma generated in the process vessel.
5. The plasma processing apparatus according to claim 1 ,
wherein the chemical component necessary for processing the substrate is oxygen.
6. The plasma processing apparatus according to claim 5 ,
wherein said chemical component emitting member is made of SiO2.
7. The plasma processing apparatus according to claim 1 ,
wherein the chemical component necessary for processing the substrate is fluorine.
8. The plasma processing apparatus according to claim 7 ,
wherein said chemical component emitting member is made of fluorocarbon resin.
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JP2006-097446 | 2006-03-31 | ||
JP2006097446A JP2007273718A (en) | 2006-03-31 | 2006-03-31 | Apparatus and method for plasma treatment |
US79231706P | 2006-04-17 | 2006-04-17 | |
US11/691,678 US7758929B2 (en) | 2006-03-31 | 2007-03-27 | Plasma processing apparatus and method |
US12/816,440 US20100252198A1 (en) | 2006-03-31 | 2010-06-16 | Plasma processing apparatus and method |
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WO2014149259A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Apparatus and method for tuning a plasma profile using a tuning ring in a processing chamber |
WO2015099892A1 (en) * | 2013-12-23 | 2015-07-02 | Applied Materials, Inc. | Extreme edge and skew control in icp plasma reactor |
US10032608B2 (en) | 2013-03-27 | 2018-07-24 | Applied Materials, Inc. | Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground |
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KR101690327B1 (en) * | 2009-03-31 | 2016-12-27 | 램 리써치 코포레이션 | Plasma arrestor insert |
JP6240441B2 (en) * | 2013-09-06 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
US20180175819A1 (en) * | 2016-12-16 | 2018-06-21 | Lam Research Corporation | Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor |
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WO2014149259A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Apparatus and method for tuning a plasma profile using a tuning ring in a processing chamber |
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US20070228009A1 (en) | 2007-10-04 |
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