US20090309624A1 - Method and Device of Measuring Interface Trap Density in Semiconductor Device - Google Patents
Method and Device of Measuring Interface Trap Density in Semiconductor Device Download PDFInfo
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- US20090309624A1 US20090309624A1 US12/542,316 US54231609A US2009309624A1 US 20090309624 A1 US20090309624 A1 US 20090309624A1 US 54231609 A US54231609 A US 54231609A US 2009309624 A1 US2009309624 A1 US 2009309624A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
Definitions
- the present invention relates to a method and device for measuring interface trap density in a semiconductor device.
- a gate oxide layer when a gate oxide layer is grown, a sufficient bonding is not made between a silicon atom and an oxygen atom, so that a dangling bond (where there are insufficient oxygen atoms) is generated at an interface between a silicon substrate and the gate oxide layer.
- a dangling bond easily attracts an electron when a transistor operates, thereby increasing the interface trap density of the gate oxide layer. Accordingly, the quality of the gate oxide layer deteriorates or the driving current is reduced, which may degrade some characteristics of a semiconductor device.
- a charge pumping test has been used as a method for measuring a surface state located under a gate oxide layer.
- the interface trap density may be calculated from data obtained using this test.
- gate tunneling leakage current and/or quantum mechanical effects can result in an incorrect calculation of the interface trap density (generally resulting in a calculated interface trap density that is too high).
- the present invention is directed to a method and device for measuring interface trap density in a semiconductor device that substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An object of the present invention is to more accurately measure and calculate interface trap density in a semiconductor device having a thin gate oxide layer.
- a method for measuring interface trap density including: inputting measurement parameters to a host computer; setting a pulse condition at a pulse generator using the measurement parameters; applying a pulse of a predetermined frequency generated by the pulse generator to a gate of a transistor; measuring a charge pumping current from a bulk of the transistor; repeating a charge pumping current measurement for a plurality of frequencies while changing a frequency until a set frequency is reached; calculating a pure charge pumping current for each frequency where a gate tunneling leakage current is removed from the charge pumping current measured for each frequency; and calculating interface trap density from the calculated pure charge pumping current for each frequency.
- a device for measuring interface trap density including: a host computer to input measurement parameters; a pulse generator to generate a pulse of a predetermined frequency by using the measurement parameters, wherein the pulse is applied to an object wafer; and an amperemeter to measure a charge pumping current from the object wafer.
- FIG. 1 is a view illustrating an apparatus for measuring a charge pumping current according to an embodiment of the present invention
- FIG. 2 is a graph illustrating a charge pumping current versus a high level gate voltage for each frequency according to an embodiment of the present invention.
- FIG. 3 is a graph illustrating interface trap density versus a pulse frequency according to an embodiment of the present invention.
- FIG. 1 is a view illustrating a construction of an apparatus for measuring a charge pumping current according to an embodiment of the present invention.
- a pulse 16 having a fixed base voltage is applied to a gate 12 of a transistor in wafer 10 , with source/drain 11 of the transistor grounded, and an amperemeter 17 in a measuring apparatus connected to a bulk 13 (also called a body or a base) of the transistor. Accordingly, a gate channel of the transistor operates between an accumulation state and an inversion state to generate the charge pumping current (I cp ). This current is measured from the bulk 13 (e.g. by amperemeter 17 ).
- the pulse 16 has a fixed low level gate voltage (i.e., a base voltage) and an increasing high level gate voltage (i.e., a peak voltage).
- the pulse 16 is generated at a pulse generator 14 (e.g., HP8110A).
- a selector 15 e.g., HP16440A controls the pulse 16 generated at the pulse generator 14 and applies the pulse 16 for a predetermined time for measurement. That is, the selector 15 serves as a switch.
- a probe station on which the wafer 10 is put, and a host computer responsible for an overall control are also parts of the measuring apparatus.
- measurement parameters may be input to the host computer.
- the measurement parameters include a width and a length of a gate (i.e., an area of a gate), a base voltage of a pulse, an initial peak voltage of a pulse, a final peak voltage of a pulse, a pulse frequency, and/or a pulse width.
- Pulse generator 14 may be configured with a pulse condition according to the measurement parameters as input to the host computer.
- the pulse condition includes a predetermined value of a pulse frequency.
- the pulse 16 of the predetermined frequency is generated by the pulse generator 14 .
- the selector 15 is operated to apply the pulse 16 of the predetermined frequency to the gate 12 .
- a charge pumping current I cp is measured from the bulk 13 .
- the selector 15 is stopped.
- the measurement of a charge pumping current is repeatedly performed for each frequency.
- a pulse frequency to be measured may be set in advance (e.g., by configuring the measurement parameters).
- the measurement of a charge pumping current may be repeated while the pulse frequency is changed until a set frequency is reached. Measurement values of a charge pumping current may be obtained for a plurality of frequencies in this manner.
- the measured charge pumping current value generally includes a gate tunneling leakage current. Therefore, a “pure” charge pumping current for each frequency may be calculated according to Equation 1 below.
- I cp (f 1 ) and I cp (f 2 ) are charge pumping currents measured for a first frequency and a second frequency, respectively, I tunneling is a leakage current, and I cp0 (f 1 ) and I cp0 (f 2 ) are pure charge pumping currents for the first and second frequencies, respectively, where an influence of a leakage current has been removed.
- a pure charge pumping current is calculated by measuring charge pumping currents at two frequencies, respectively, and subtracting according to Equation 1. For example, a pure charge pumping current value at a frequency of 1 MHz (e.g., a where a tunneling current has been removed) may be obtained by subtracting a charge pumping current value measured at a frequency of 1 MHz from a charge pumping current value measured at a frequency of 2 MHz. The reason this calculation Equation 1 is possible is that a charge pumping current is in proportion to a frequency, while the tunneling current is generally constant.
- FIG. 2 is a graph illustrating a charge pumping current versus a high level gate voltage for a plurality of frequencies according to an embodiment of the present invention.
- the interface trap density may be calculated from the “pure” charge pumping current according to Equation 2 below.
- N it is the interface trap density
- I cp is the calculated pure charge pumping current
- f is the frequency at which the charge pumping current was measured
- a g is an area of a gate
- q is an amount of charge.
- FIG. 3 illustrates interface trap densities calculating according to Equation 2 for a plurality of frequencies.
- FIG. 3 demonstrates that the interface trap density calculated according the present invention is generally constant even when the pulse frequency changes.
- the calculated interface trap density may erroneously increase as the frequency decreases.
- measurement of the interface trap density for transistors with thing gate oxide films may be impossible.
- the present invention can obtain an accurate result value regardless of the pulse frequency as illustrated in FIG. 3 .
- the present invention can obtain accurate data of high reliability when measuring and calculating interface trap density in a semiconductor device having a thin gate oxide layer.
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
A method is provided for measuring interface trap density in a semiconductor device. In the method, measurement parameters are input to a host computer. A pulse condition is set at a pulse generator using the measurement parameters. A pulse of a predetermined frequency generated by the pulse generator is applied to a gate of a transistor, and a charge pumping current is measured from a bulk of the transistor. A charge pumping current measurement may be repeated for a plurality of frequencies while changing the frequency until a set frequency is reached. A pure charge pumping current is calculated for each frequency where a gate tunneling leakage current is removed from the charge pumping current measured for each frequency. Interface trap density is calculated from the calculated pure charge pumping current for each frequency.
Description
- This application is a divisional of co-pending U.S. patent application Ser. No. 11/646,806, filed Dec. 27, 2006 (Attorney Docket No. SPO200611-0001US), which is incorporated herein by reference in its entirety.
- 1. Field of the Invention
- The present invention relates to a method and device for measuring interface trap density in a semiconductor device.
- 2. Description of the Related Art
- As a semiconductor technology develops constantly, the length of gates gradually become shorter and the thickness of gate oxide layers gradually become thinner. Accordingly, characteristics of semiconductor devices are inevitably affected by these smaller dimensions. One of the characteristics affected is the interface trap density between a silicon substrate and a gate oxide layer.
- Generally, when a gate oxide layer is grown, a sufficient bonding is not made between a silicon atom and an oxygen atom, so that a dangling bond (where there are insufficient oxygen atoms) is generated at an interface between a silicon substrate and the gate oxide layer.
- A dangling bond easily attracts an electron when a transistor operates, thereby increasing the interface trap density of the gate oxide layer. Accordingly, the quality of the gate oxide layer deteriorates or the driving current is reduced, which may degrade some characteristics of a semiconductor device.
- Traditionally, a charge pumping test has been used as a method for measuring a surface state located under a gate oxide layer. The interface trap density may be calculated from data obtained using this test. However, when the conventional method is applied to a device having a very thin gate oxide layer, gate tunneling leakage current and/or quantum mechanical effects can result in an incorrect calculation of the interface trap density (generally resulting in a calculated interface trap density that is too high).
- Accordingly, the present invention is directed to a method and device for measuring interface trap density in a semiconductor device that substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An object of the present invention is to more accurately measure and calculate interface trap density in a semiconductor device having a thin gate oxide layer.
- Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- To achieve these objects and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, there is provided a method for measuring interface trap density, the method including: inputting measurement parameters to a host computer; setting a pulse condition at a pulse generator using the measurement parameters; applying a pulse of a predetermined frequency generated by the pulse generator to a gate of a transistor; measuring a charge pumping current from a bulk of the transistor; repeating a charge pumping current measurement for a plurality of frequencies while changing a frequency until a set frequency is reached; calculating a pure charge pumping current for each frequency where a gate tunneling leakage current is removed from the charge pumping current measured for each frequency; and calculating interface trap density from the calculated pure charge pumping current for each frequency.
- Also, there is provided a device for measuring interface trap density, the device including: a host computer to input measurement parameters; a pulse generator to generate a pulse of a predetermined frequency by using the measurement parameters, wherein the pulse is applied to an object wafer; and an amperemeter to measure a charge pumping current from the object wafer.
- It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principle of the invention. In the drawings:
-
FIG. 1 is a view illustrating an apparatus for measuring a charge pumping current according to an embodiment of the present invention; -
FIG. 2 is a graph illustrating a charge pumping current versus a high level gate voltage for each frequency according to an embodiment of the present invention; and -
FIG. 3 is a graph illustrating interface trap density versus a pulse frequency according to an embodiment of the present invention. - Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
-
FIG. 1 is a view illustrating a construction of an apparatus for measuring a charge pumping current according to an embodiment of the present invention. - Referring to
FIG. 1 , apulse 16 having a fixed base voltage is applied to agate 12 of a transistor inwafer 10, with source/drain 11 of the transistor grounded, and anamperemeter 17 in a measuring apparatus connected to a bulk 13 (also called a body or a base) of the transistor. Accordingly, a gate channel of the transistor operates between an accumulation state and an inversion state to generate the charge pumping current (Icp). This current is measured from the bulk 13 (e.g. by amperemeter 17). - The
pulse 16 has a fixed low level gate voltage (i.e., a base voltage) and an increasing high level gate voltage (i.e., a peak voltage). Thepulse 16 is generated at a pulse generator 14 (e.g., HP8110A). A selector 15 (e.g., HP16440A) controls thepulse 16 generated at thepulse generator 14 and applies thepulse 16 for a predetermined time for measurement. That is, theselector 15 serves as a switch. Meanwhile, though not shown in the drawing, a probe station on which thewafer 10 is put, and a host computer responsible for an overall control are also parts of the measuring apparatus. - Hereinafter, a method for measuring interface trap density will be described.
- First, measurement parameters may be input to the host computer. Examples of the measurement parameters include a width and a length of a gate (i.e., an area of a gate), a base voltage of a pulse, an initial peak voltage of a pulse, a final peak voltage of a pulse, a pulse frequency, and/or a pulse width.
Pulse generator 14 may be configured with a pulse condition according to the measurement parameters as input to the host computer. In a preferred embodiment, the pulse condition includes a predetermined value of a pulse frequency. - The
pulse 16 of the predetermined frequency is generated by thepulse generator 14. Theselector 15 is operated to apply thepulse 16 of the predetermined frequency to thegate 12. After a charge pumping current Icp is measured from thebulk 13, theselector 15 is stopped. The measurement of a charge pumping current is repeatedly performed for each frequency. A pulse frequency to be measured may be set in advance (e.g., by configuring the measurement parameters). In one embodiment, the measurement of a charge pumping current may be repeated while the pulse frequency is changed until a set frequency is reached. Measurement values of a charge pumping current may be obtained for a plurality of frequencies in this manner. - The measured charge pumping current value generally includes a gate tunneling leakage current. Therefore, a “pure” charge pumping current for each frequency may be calculated according to
Equation 1 below. -
I cp(ƒ2)−I cp(ƒ1)=[I cp0(ƒ2)+I tunneling]−[I cp0(ƒ1)+I tunneling ]=I cp0(ƒ2−ƒ1),Equation 1 - where Icp(f1) and Icp(f2) are charge pumping currents measured for a first frequency and a second frequency, respectively, Itunneling is a leakage current, and Icp0(f1) and Icp0(f2) are pure charge pumping currents for the first and second frequencies, respectively, where an influence of a leakage current has been removed.
- A pure charge pumping current is calculated by measuring charge pumping currents at two frequencies, respectively, and subtracting according to
Equation 1. For example, a pure charge pumping current value at a frequency of 1 MHz (e.g., a where a tunneling current has been removed) may be obtained by subtracting a charge pumping current value measured at a frequency of 1 MHz from a charge pumping current value measured at a frequency of 2 MHz. The reason thiscalculation Equation 1 is possible is that a charge pumping current is in proportion to a frequency, while the tunneling current is generally constant. - Charge pumping currents for each frequency calculated in this manner are illustrated in
FIG. 2 . -
FIG. 2 is a graph illustrating a charge pumping current versus a high level gate voltage for a plurality of frequencies according to an embodiment of the present invention. - The interface trap density may be calculated from the “pure” charge pumping current according to
Equation 2 below. -
- where Nit is the interface trap density, Icp is the calculated pure charge pumping current, f is the frequency at which the charge pumping current was measured, Ag is an area of a gate, and q is an amount of charge.
-
FIG. 3 illustrates interface trap densities calculating according toEquation 2 for a plurality of frequencies. -
FIG. 3 demonstrates that the interface trap density calculated according the present invention is generally constant even when the pulse frequency changes. In contrast, when conventional measuring methods are applied to a transistor with a thin gate oxide layer, the calculated interface trap density may erroneously increase as the frequency decreases. In some cases, measurement of the interface trap density for transistors with thing gate oxide films may be impossible. On the other hand, the present invention can obtain an accurate result value regardless of the pulse frequency as illustrated inFIG. 3 . - As described above, the present invention can obtain accurate data of high reliability when measuring and calculating interface trap density in a semiconductor device having a thin gate oxide layer.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (7)
1. A device for measuring interface trap density, the device comprising:
a pulse generator configured to generate a pulse of a predetermined frequency, wherein the pulse is applied to an object wafer; and
an amperemeter configured to measure a charge pumping current from the object wafer.
2. The device of claim 1 , further comprising a host computer configured to receive at least one measurement parameter required for measurement, and wherein the pulse generator is configured to generate the pulse in accordance with the at least one measurement parameter.
3. The device according to claim 2 , further comprising a selector which controls the pulse generated at the pulse generator.
4. The device according to claim 1 , wherein the wafer has a transistor comprising a gate, a grounded source/drain, and a bulk, and wherein the pulse is applied to the gate and the amperemeter is connected to the bulk.
5. The device according to claim 4 , wherein the pulse has a fixed base voltage.
6. The device according to claim 4 , the transistor further comprising a gate channel, wherein the gate channel operates between an accumulation state and an inversion state to generate the charge pumping current (Icp).
7. The device according to claim 4 , wherein the pulse generated from the pulse generator comprises a fixed low level gate voltage and an increasing high level gate voltage.
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US12/542,316 US20090309624A1 (en) | 2005-12-30 | 2009-08-17 | Method and Device of Measuring Interface Trap Density in Semiconductor Device |
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KR1020050134764A KR100683384B1 (en) | 2005-12-30 | 2005-12-30 | Method of measuring interface trap density in semiconductor device |
KR10-2005-0134764 | 2005-12-30 | ||
US11/646,806 US7592828B2 (en) | 2005-12-30 | 2006-12-27 | Method and device of measuring interface trap density in semiconductor device |
US12/542,316 US20090309624A1 (en) | 2005-12-30 | 2009-08-17 | Method and Device of Measuring Interface Trap Density in Semiconductor Device |
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US11/646,806 Division US7592828B2 (en) | 2005-12-30 | 2006-12-27 | Method and device of measuring interface trap density in semiconductor device |
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US12/542,316 Abandoned US20090309624A1 (en) | 2005-12-30 | 2009-08-17 | Method and Device of Measuring Interface Trap Density in Semiconductor Device |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20120187976A1 (en) * | 2010-11-02 | 2012-07-26 | Peking University | Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact |
US20130099799A1 (en) * | 2011-10-21 | 2013-04-25 | Yongfeng Cao | Method for measuring interface state density |
CN110208684A (en) * | 2019-07-08 | 2019-09-06 | 西安太乙电子有限公司 | A kind of lifetime estimation method in CMOS type integrated circuit life extension test |
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US20080096292A1 (en) * | 2006-10-20 | 2008-04-24 | Texas Instruments Incorporated | Method for measuring interface traps in thin gate oxide MOSFETs |
CN102353882B (en) * | 2011-06-09 | 2014-02-19 | 北京大学 | Method for testing trap density and position of gate dielectric layer of semiconductor device |
CN102832203B (en) * | 2012-08-29 | 2014-10-08 | 北京大学 | Structure and method for testing trap density of gate oxide interface |
CN103474369B (en) * | 2013-08-21 | 2016-01-20 | 北京大学 | A kind of method extracting trap time constant of gate dielectric layer of semiconductor device |
EP3132467A4 (en) | 2014-04-17 | 2017-11-01 | Femtometrix, Inc. | Wafer metrology technologies |
CN104198570B (en) * | 2014-09-10 | 2016-08-17 | 国家电网公司 | The apparatus and method of short circuit current decay calculation trap parameters are measured under reverse biased |
WO2016077617A1 (en) | 2014-11-12 | 2016-05-19 | Femtometrix, Inc. | Systems for parsing material properties from within shg signals |
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WO2019222260A1 (en) | 2018-05-15 | 2019-11-21 | Femtometrix, Inc. | Second harmonic generation (shg) optical inspection system designs |
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JPH06349920A (en) * | 1993-06-08 | 1994-12-22 | Dainippon Screen Mfg Co Ltd | Electric charge measuring method of semiconductor wafer |
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2005
- 2005-12-30 KR KR1020050134764A patent/KR100683384B1/en not_active IP Right Cessation
-
2006
- 2006-12-27 US US11/646,806 patent/US7592828B2/en not_active Expired - Fee Related
-
2009
- 2009-08-17 US US12/542,316 patent/US20090309624A1/en not_active Abandoned
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US3943442A (en) * | 1974-11-11 | 1976-03-09 | Nasa | Method and apparatus for measurement of trap density and energy distribution in dielectric films |
US5140272A (en) * | 1987-09-25 | 1992-08-18 | Hitachi, Ltd. | Method of semiconductor surface measurment and an apparatus for realizing the same |
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US6844604B2 (en) * | 2001-02-02 | 2005-01-18 | Samsung Electronics Co., Ltd. | Dielectric layer for semiconductor device and method of manufacturing the same |
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Cited By (5)
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---|---|---|---|---|
US20120187976A1 (en) * | 2010-11-02 | 2012-07-26 | Peking University | Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact |
US8866507B2 (en) * | 2010-11-02 | 2014-10-21 | Peking University | Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact |
US20130099799A1 (en) * | 2011-10-21 | 2013-04-25 | Yongfeng Cao | Method for measuring interface state density |
US9110126B2 (en) * | 2011-10-21 | 2015-08-18 | Shanghai Huali Microelectronics Corporation | Method for measuring interface state density |
CN110208684A (en) * | 2019-07-08 | 2019-09-06 | 西安太乙电子有限公司 | A kind of lifetime estimation method in CMOS type integrated circuit life extension test |
Also Published As
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US20070152673A1 (en) | 2007-07-05 |
US7592828B2 (en) | 2009-09-22 |
KR100683384B1 (en) | 2007-02-15 |
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