US20090301890A1 - Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ecd - Google Patents
Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ecd Download PDFInfo
- Publication number
- US20090301890A1 US20090301890A1 US12/540,710 US54071009A US2009301890A1 US 20090301890 A1 US20090301890 A1 US 20090301890A1 US 54071009 A US54071009 A US 54071009A US 2009301890 A1 US2009301890 A1 US 2009301890A1
- Authority
- US
- United States
- Prior art keywords
- ferromagnetic
- metal element
- ferromagnetic metal
- different
- alternating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/0072—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
- H01F41/26—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids using electric currents, e.g. electroplating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/81—Of specified metal or metal alloy composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
- Y10S977/838—Magnetic property of nanomaterial
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12931—Co-, Fe-, or Ni-base components, alternative to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12951—Fe-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12986—Adjacent functionally defined components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Thin Magnetic Films (AREA)
- Electroplating Methods And Accessories (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
- This application is a divisional of U.S. patent application Ser. No. 11/620,480, filed Jan. 5, 2007 the entire content and disclosure of which is incorporated herein by reference. The present application is related to U.S. patent application Ser. No. 11/620,445 filed on Jan. 5, 2007, now U.S. Pat. No. 7,539,051 and U.S. patent application Ser. No. 11/620,497, filed on Jan. 5, 2007, now U.S. Patent Application Publication No. 2008/0166874, which are assigned to the same assignee as the present application. The entire contents of such U.S. patent applications are incorporated herewith by reference for all purposes.
- The present invention relates to nanostructures comprising compositionally modulated ferromagnetic layers, and a method of forming such nanostructures using pulsed electrochemical deposition (ECD) or electroplating techniques.
- Metal nanowires have been conventionally formed by a bottom-up ECD or electroplating through mask process, as shown in
FIGS. 1A-1C . Specifically, a substrate structure comprising a supportingmatrix 100 with one or moreopen pores 104 and aconductive base layer 102 is first provided, as shown inFIG. 1A . Each of theopen pores 104 extends through the supportingmatrix 100 onto theconductive base layer 102. An ECD or electroplating process is then carried out to deposit ametal material 106 over theconductive base layer 102 and to fill theopen pores 104, as shown inFIG. 1B . After theopen pores 104 are completely filled with themetal material 106, the ECD process is terminated, followed by selective removal of the supportingmatrix 100, thereby forming free-standingmetal nanowires 106, as shown inFIG. 1C .FIG. 2 is a picture of multiple metal nanowires formed by such a conventional bottom-up ECD process. - The conventional bottom-up ECD process as described hereinabove has also been used for forming compositionally modulated structures that comprise alternating layers of ferromagnetic materials and nonmagnetic materials, such as Co/Cu, Co/Ru, Co/Au, Ni/Cu, NiCo/Cu, NiFe/Cu, CoFe/Cu, FeCoNi/Cu, etc. Such compositionally modulated ferromagnetic-nonmagnetic structures are particularly useful in giant magnetoresistance (GMR) applications, which require alternating layers of ferromagnetic and non-magnetic materials.
- However, the conventional bottom-up electrodeposition of the above ferromagnetic/nonmagnetic layered structures relies on the large difference between the reversible potentials of the ferromagnetic/nonmagnetic materials. In most cases, the nonmagnetic elements, such as Cu and Au, are much more noble than the ferromagnetic elements, such as Fe, Ni and Co. In other words, the nonmagnetic elements are electrodeposited at a much less negative potential than the ferromagnetic elements. In addition, the nonmagnetic and ferromagnetic elements do not interact with each other during electrodeposition. Therefore, an electrolyte with a small amount of nonmagnetic elements and an excess amount of ferromagnetic elements is generally used to form the ferromagnetic/nonmagnetic layered structures. At a relatively low negative potential, pure elemental nonmagnetic material is electrochemically deposited, while the ferromagnetic elements are not deposited. At a relatively high negative potential, both the nonmagnetic and the ferromagnetic elements are electrochemically deposited. Due to the small amount of nonmagnetic species available in the solution, the ferromagnetic elements are deposited at a much faster rate than the nonmagnetic elements, thereby resulting in a deposited layer with ferromagnetic characteristics.
- The conventional bottom-up ECD process has never been used for forming compositionally modulated structures that comprise alternative layers of different ferromagnetic materials, which have very close reversible potentials and which may interact with each other during electrodeposition.
- U.S. Pat. No. 7,539,051, describes a memory storage device comprising a plurality of alternating first and second ferromagnetic layers of different material compositions. The present invention correspondingly provides a method to form such a memory storage device using a pulsed ECD or electroplating process.
- In one aspect, the present invention relates to a method comprising:
- forming a substrate structure comprising a supporting matrix having at least one open pore extending therethrough onto a conductive base layer; and
- electroplating the substrate structure by immersing the substrate structure in an electroplating solution that comprises at least one ferromagnetic metal element and one or more additional, different metal elements, either magnetic or nonmagnetic, and applying a pulsed electroplating potential with alternating pulses to the conductive base layer of the substrate structure to deposit a plurality of alternating ferromagnetic layers of different material compositions in the at least one open pore of the supporting matrix.
- Preferably, the at least one open pore has a cross-sectional diameter ranging from about 10 nm to about l 000 nm.
- In a preferred, but not necessary, embodiment of the present invention, the electroplating solution comprises a first ferromagnetic metal element and a second, different ferromagnetic metal element. Some of the resulting ferromagnetic layers may comprise the first (but not the second) ferromagnetic metal element, and others of the resulting ferromagnetic layers may comprise the second (but not the first) ferromagnetic metal element. Alternatively, all of the deposited ferromagnetic layers comprise the first and second ferromagnetic metal elements, but in different proportions.
- In an alternative embodiment of the present invention, the electroplating solution comprises a ferromagnetic metal element and a non-ferromagnetic metal element. The resulting ferromagnetic layers are ferromagnetic and all comprise the ferromagnetic metal element and the non-ferromagnetic metal element, but in different proportions.
- In still another alternative embodiment of the present invention, the electroplating solution comprises a ferromagnetic metal element, a first non-ferromagnetic metal element, and a second, different non-ferromagnetic metal element. Some of the resulting ferromagnetic layers comprise the ferromagnetic metal element alloyed with the first (but not the second) non-ferromagnetic metal element, and others of the resulting ferromagnetic layers comprise the ferromagnetic metal element alloyed with the second (but not the first) non-ferromagnetic metal element.
- In still another alternative embodiment of the present invention, potential pulses with multiple high and/or low potential values can be applied, and the at least one open pore in the substrate matrix may be filled with alternating ferromagnetic layers of more than two different material compositions. The different material compositions may contain different ferromagnetic elements, different non-ferromagnetic elements, same ferromagnetic elements at different proportions, or same ferromagnetic and non-ferromagnetic elements at different proportions.
- For a specific example, the electroplating solution comprises a Ni salt and a Fe salt, so that the resulting first and second ferromagnetic layers both comprise Ni—Fe alloys but with different proportions of Ni and Fe.
- The supporting matrix as described hereinabove may comprise any suitable materials, e.g., photoresists, e-beam or x-ray dielectric resist materials, etc., which can be patterned to form open pores therein. Preferably, but not necessarily, the supporting matrix comprises a material selected from the group consisting of Si, SiO2, Si3N4, Al, Al2O3, and mixtures thereof.
- The conductive base layer may comprise any material that is conductive, such as metals, metal alloys, metal silicides, metal nitrides, doped semiconductors, etc. Preferably, but not necessarily, the conductive base layer comprises a material selected from the group consisting of Au, Cu, Pt, Pd, Ag, Si, GaAs, and alloys thereof.
- The pulsed electroplating potential as described hereinabove may have high pulses ranging from about −1.0 V to about −1.8 V (as measured against a saturated calomel electrode or SCE) and low pulses ranging from −0.3 V to about −1.4 V (as measured against the SCE), provided that a high potential pulse always has a potential higher than those of the preceding and subsequent low potential pulses. Further, the pulsed electroplating potential can comprise high and/or low pulses of more than two potential values, so that the nanostructure formed comprises alternating ferromagnetic layers of more than two different material compositions. Further, the pulsed electroplating potential can comprise continuous changes, as discussed in more detail hereinafter, so that the nanostructure formed comprises continuous and gradual compositional changes.
- The method of the present invention may further comprise the step of magnetizing the alternating ferromagnetic layers to form a plurality of alternating magnetic domains of opposite directions that are separated from each other by domain walls located therebetween. Such magnetic domains and domain walls are movable across the alternating ferromagnetic layers upon application of a driving current. In this manner, a magnetic storage device is formed, in which data can be stored as the magnetization of magnetic domains and the presence of domain walls.
- In another aspect, the present invention relates to a nanostructure having a cross-sectional diameter ranging from about 10 nm to about 1000 nm and comprising a plurality of alternating ferromagnetic layers of different material compositions. For example, some of the ferromagnetic layers may comprise a first ferromagnetic metal element, and others of the second ferromagnetic layers may comprise a second, different ferromagnetic metal element. Alternatively, the alternating ferromagnetic layers may both comprise the first and second, different ferromagnetic metal elements, but in different proportions. Further, some of the ferromagnetic layers may comprise a ferromagnetic metal element alloyed with a first non-ferromagnetic metal element, and others of the ferromagnetic layers may comprise the same ferromagnetic metal element alloyed with a second, different non-ferromagnetic metal element. Still further, the alternating ferromagnetic layers may comprise the same ferromagnetic and non-ferromagnetic metal elements, but in different proportions.
- In an exemplary, but not necessary embodiment of the present invention, the first and second ferromagnetic layers both comprise Ni—Fe alloys but with different proportions of Ni and Fe.
- The nanostructure of the present invention may further comprise a plurality of alternating magnetic domains of opposite directions that are separated from each other by domain walls located therebetween. Such magnetic domains and domain walls are movable across the first and second ferromagnetic layers upon application of a driving current. Therefore, the nanostructure of the present invention can function as a magnetic storage device, in which data can be stored as the magnetization of magnetic domains and the presence of domain walls.
- Other aspects, features and advantages of the invention will be more filly apparent from the ensuing disclosure and appended claims.
-
FIGS. 1A-1C are cross-sectional views that illustrate the processing steps of a conventional bottom-up ECD or electroplating through mask process for forming metal nanowires. -
FIG. 2 is a pictorial view of multiple metal nanowires formed by the conventional bottom-up ECD process. -
FIG. 3 is a cross-sectional view of compositionally modulated nanostructures comprising alternating first and second ferromagnetic layers of different material compositions, according to one embodiment of the present invention. -
FIG. 4 is a graph that plots the Fe contents of Ni—Fe alloys as deposited from two different Ni—Fe electroplating solutions as a function of the applied electroplating potentials. -
FIG. 5 shows the potential profile of a pulsed electroplating potential that comprises abruptly alternating high and low pulses, according to one embodiment of the present invention. -
FIGS. 6A and 6B show scanning electron microscopy (SEM) pictures of ferromagnetic nanowires that contain alternating layers of Ni45Fe55 and Ni80Fe20 alloys, as electroplated using a pulsed potential with a potential profile similar to that shown inFIG. 5 , according to one embodiment of the present invention. The wires are shown after being etched in an acid solution to selectively remove the Ni45Fe55 alloy. The thicker sections of the wire contain the Ni80Fe20 alloy, and the thinner sections of the wire contain the Ni45Fe55 alloy. -
FIG. 7 shows the potential profile of a pulsed electroplating potential that comprises alternating high and low pulses with a ramping period therebetween, according to one embodiment of the present invention. -
FIG. 8 shows SEM pictures of ferromagnetic nanowires that contain alternating layers of Ni45Fe55 and Ni80Fe20 alloys, as electroplated using a pulsed potential with a potential profile similar to that shown inFIG. 7 , according to one embodiment of the present invention. The wires are shown after being etched in an acid solution to selectively remove the Ni45Fe55 alloy. The thicker sections of the wire contain the Ni80Fe20 alloy, and the notched sections of the wire contain the Ni45Fe55 alloy. -
FIGS. 9A-9H show various exemplary pulsed electroplating potentials of different potential profiles. - In the following description, numerous specific details are set forth, such as particular structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the present invention. However, it will be appreciated by one ordinarily skilled in the art that the invention may be practiced without these specific details. In other instances, well-known structures or processing steps have not been described in detail in order to avoid obscuring the invention.
- It will be understood that when an element as a layer, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.
- The term “ferromagnetic material” as used herein refers to any material that can be magnetized by applying an external magnetic field and exhibit remnant magnetization after the external magnetic field is removed.
- The term “ferromagnetic layer” or “ferromagnetic layers” as used herein refers to one or more layered structures that exhibit spontaneous magnetization overall. The ferromagnetic layer or layers of the present invention comprise(s) at least one ferromagnetic element, with or without additional ferromagnetic or non-ferromagnetic elements.
- The present invention provides compositionally modulated ferromagnetic nanostructures that each has a cross-sectional diameter ranging from about 10 nm to about 1000 nm and comprises alternating ferromagnetic layers of different material properties. The present invention is also broadly applicable to film structures comprising alternating ferromagnetic layers of different material properties.
- Such ferromagnetic nanostructures can be magnetized to form a plurality of alternating magnetic domains of opposite directions with domain walls located therebetween. The magnetic domains and domain walls are movable across the ferromagnetic layers, and the alternating ferromagnetic layers of different material properties are particularly effective in pinning the domain walls and ensuring movement of the domain walls at very discrete and precise increments or steps, without any drifting. In this manner, the ferromagnetic nanostructures can be used as memory storage devices, in which data is stored as locations of the magnetic domains and domain walls. For more information about such memory storage devices, please see U.S. Pat. No. 7,539,051.
- Specifically,
FIG. 3 shows a cross-sectional view of multipleferromagnetic nanowires 14, onconductive base layer 12, each of which has a cross-sectional diameter ranging from about 10 nm to about 1000 nm and contains alternating first and secondferromagnetic layers - In an exemplary, but not necessary embodiment, of the present invention, each of the first
ferromagnetic layers 14A contains a first ferromagnetic material A, and each of the secondferromagnetic layers 14B contains a second, different ferromagnetic material B. In an alternative embodiment of the present invention, the first and secondferromagnetic layers ferromagnetic layers 14A contains a ferromagnetic material A mixed with a first non-ferromagnetic material C, and each of the secondferromagnetic layers 14A contains a ferromagnetic material A mixed with a second, different non-ferromagnetic material D, provided that such non-ferromagnetic materials C and D do not affect the overall ferromagnetic characteristic oflayers ferromagnetic layers layers - The ferromagnetic materials A and B as disclosed hereinabove may comprise any suitable ferromagnetic element(s). For example, the ferromagnetic materials A and B may comprise one or more ferromagnetic elements, including, but not limited to: Fe, Ni, Co, Gd, Dy, Tb, Ho, Er, and mixtures or combinations thereof. Such ferromagnetic materials A and B can present either in pure form, or as mixtures with other ferromagnetic or non-ferromagnetic elements.
- The non-ferromagnetic materials C and D as disclosed hereinabove may comprise any non-ferromagnetic element(s) or mixtures thereof, including, but not limited to: Ru, Mo, Mn, Cr, Si, Ge, Ga, As, Cu, Rh, Pt, Au, Pd, etc.
- The ferromagnetic nanowires of
FIG. 3 can be magnetized in small sections to form alternating magnetic domains of opposite directions and domain walls located therebetween. The magnetic domains and domain walls can be moved upon the application of a driving current. In this manner, the ferromagnetic nanowires function as memory storage devices, in which digital data is stored as the magnetization of each magnetic domain in each segment, 14A, and the domain walls between adjacent magnetic domains can be pinned in the segments, 14B. Information can then be read from or be written to such a memory storage device by a reading or a writing device when the magnetic domains are moved across such a reading or writing device upon application of a driving current. - It is important to note that although the ferromagnetic nanostructures of the present invention may have any regular or irregular cross-sectional shape, such as circular, square, rectangular, triangular, polygonal, semi-circular, ellipsoidal, etc. Further, the ferromagnetic nanostructures of the present invention may be either solid nanorods with relatively homogeneous interior and exterior compositions, or tubular nanostructures with insulating or highly resistive semiconductor cores that are non-magnetic.
- Although the ferromagnetic nanostructures as shown in
FIG. 3 comprise only two different ferromagnetic layers, it is understood that the ferromagnetic nanostructures of the present invention can comprise more than two different layers, i.e., additional layers of different material compositions can be provided between the alternating first and secondferromagnetic layers - The ferromagnetic nanowires as described hereinabove can be formed by a pulsed ECD process. Specifically, a substrate containing a supporting matrix with at least one open pore and a
conductive base layer 12 is first formed. The supporting matrix may comprise any suitable material, including, but not limited to: Si, SiO2, Si3N4, Al, Al2O3, and mixtures thereof Therefore, the open pore preferably has a cross-sectional diameter from about 10 nm to about 1000 nm. Further, the open pore preferably extends through the supporting matrix onto the conductive base layer, so that the conductive base layer can be used as a seed layer for subsequent electroplating. The shape of the open pore determines the shape of the ferromagnetic nanowires to be formed. The conductive base layer may comprise any suitable conductive material for electroplating, which includes, but is not limited to: Au, Cu, Pt, Ag, Si, GaAs, and alloys thereof. - For example, anodized Al2O3 film or commercially available Whatman® membrane (manufactured by Whatman, Inc. at Florham Park, N.J.), which contains a supporting matrix of aluminum oxide with open pores therein, can be used for forming the substrate of the present application by sputtering a metal on one side of the membrane to form the conductive base layer.
- Electroplating of the above-described substrate structure is then carried out in an electroplating solution under a pulsed electroplating potential, so as to form alternating ferromagnetic layers of different material compositions. Subsequently, the supporting matrix is selectively removed to form the desired ferromagnetic nanostructures.
- The electroplating solution as used herein comprises one or more salts of ferromagnetic metal species and one or more supporting electrolyte salts. The electroplating solution may further comprise one or more components, such as pH buffering agents, complexing agents, surfactants, organic additives (e.g., brighteners or suppressants), etc., for enhancing the material quality of the deposited layers.
- For example, the electroplating solution may comprise a first salt of a first ferromagnetic metal element and at least one additional salt of a second, different ferromagnetic metal element, which can be used to form alternating ferromagnetic layers that comprise different ferromagnetic metal elements, or ferromagnetic layers that comprise the same ferromagnetic metal elements but in different proportions. Alternatively, the electroplating solution may comprise a salt of a ferromagnetic metal element and at least one additional salt of a non-ferromagnetic metal element, which can be used to form alternating ferromagnetic layers that comprise both the ferromagnetic metal element and the non-ferromagnetic metal element but in different proportions. Further, the electroplating solution may comprise a salt of a ferromagnetic metal element, a first additional salt of a first non-ferromagnetic metal element, and a second additional salt of a second, different non-ferromagnetic metal element, which can be used to form alternating ferromagnetic layers that comprise the same ferromagnetic metal element mixed with different non-ferromagnetic metal elements.
- An exemplary electroplating solution comprises about 0.05-0.5 mol/L nickel sulfate, 0.1-1 mol/L nickel chloride, 0.005-0.2 mol/L ferrous sulfate, 0.1-0.5 mol/L boric acid, 0.1-1 mol/L sodium chloride, and 0.1-2 g/L sodium saccharin, and 0.05-0.1 g/L sodium lauryl sulfate, which can be used to form alternating ferromagnetic layers that comprise Ni—Fe alloys with different Ni and Fe contents.
- The same electroplating solution can be used for depositing metal layers of different material compositions when different electroplating potentials are applied.
FIG. 4 shows the change of Fe contents in electroplated Ni—Fe alloys in response to the change of electroplating potentials. Specifically, under a relatively low electroplating potential of about −1.3V (as measured against the SCE), the Fe content in the Ni—Fe alloys electroplated fromsolutions - Therefore, by applying a pulsed electroplating potential with alternating high and low pulses to the conductive base layer of the substrate structure as described hereinabove, alternating ferromagnetic layers with different material compositions can be formed using the same electroplating solution in a continuous electroplating process. The thicknesses of the alternating ferromagnetic layers can be precisely controlled by duration of each potential pulse.
-
FIG. 5 shows the potential profile for an exemplary pulsed electroplating potential that can be used in the present invention. Specifically, the pulsed electroplating potential comprises low pulses of potential value E1 and high pulses of potential value E2, while the high and low pulses abruptly alternate from one to the other over time. Preferably, but not necessarily, the high pulses have potential values ranging from about −1.0 V to about −1.8 V (as measured against the SCE), and the low pulses have potential values ranging from about −0.3 V to about 1.4 V (as measured against the SCE). -
FIG. 6A shows a SEM picture of ferromagnetic nanowires that contain alternating layers of Ni45Fe55 and Ni80Fe20, as electroplated from the exemplary electroplating solution as described hereinabove using a pulsed electroplating potential with a potential profile similar to that shown inFIG. 5 . Specifically, the high pulses have a potential value of about −1.6V, and the low pulses have a potential value of −1.3V, with respect to a saturated calomel reference electrode. The Al2O3 matrix was dissolved in a NaOH solution, and the wires were etched in a HNO3 ethanol solution before imaging. Typically, the higher Fe content in the NiFe alloy, the faster the NiFe alloy is dissolved in the HNO3 ethanol solution. Therefore, the segments containing the Ni45Fe55 alloy are much thinner than the segments containing the Ni80Fe20 alloy, due to the selective etching of the Ni45Fe55 alloy over the Ni80Fe20 alloy. Consequently, the compositional modulation can be readily observed.FIG. 6B is an enlarged picture of the region circled by white inFIG. 6A . The Ni45Fe55 layers as shown inFIG. 6B have a layer thickness of about 400 nm, and the Ni80Fe20 layers have a layer thickness of about 200 nm. -
FIG. 7 shows the potential profile for another exemplary pulsed electroplating potential that can be used in the present invention. Specifically, the pulsed electroplating potential comprises alternating low pulses of potential value E1 and high pulses of potential value E2, while a ramping period (T) is provided between E1 and E2. The composition of the electroplated layers can be more continuously and gradually controlled with such a ramping period.FIG. 8 shows the SEM pictures of ferromagnetic nanowires that contain alternating layers of Ni45Fe55 and Ni80Fe20, as electroplated using a pulsed electroplating potential with a potential profile similar to that shown inFIG. 7 . - The pulsed electroplating potential may have any suitable potential profile, as long as such potential profile contains alternating high and low pulses. For example, additional potential profiles as shown in
FIGS. 9A-9H can also be used for forming the ferromagnetic nanostructures of the present invention. Further, the pulsed electroplating current can comprise high pulses of different potential values or low pulses of different potential values or both, so that the nanostructure so formed comprises additional layers of different material compositions between the first and second ferromagnetic layers. - It is important to note that the present invention broadly covers any ferromagnetic nanostructure with alternating ferromagnetic layers of different material compositions. The number of alternating ferromagnetic layers may range from two to hundreds. Further, each ferromagnetic layer may comprise any ferromagnetic elements mixed with any number of additional ferromagnetic or non-ferromagnetic elements, as long as the overall characteristic of such a layer remains ferromagnetic.
- The ferromagnetic nanostructures of the present invention can be used for forming memory storage elements, as described hereinabove, or any other spinstronic devices that require alternating ferromagnetic layers of different material compositions.
- While the invention has been described herein with reference to specific embodiments, features and aspects, it will be recognized that the invention is not thus limited, but rather extends in utility to other modifications, variations, applications, and embodiments, and accordingly all such other modifications, variations, applications, and embodiments are to be regarded as being within the spirit and scope of the present invention.
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/540,710 US20090301890A1 (en) | 2007-01-05 | 2009-08-13 | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ecd |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/620,480 US7736753B2 (en) | 2007-01-05 | 2007-01-05 | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ECD |
US12/540,710 US20090301890A1 (en) | 2007-01-05 | 2009-08-13 | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ecd |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/620,480 Division US7736753B2 (en) | 2007-01-05 | 2007-01-05 | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ECD |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090301890A1 true US20090301890A1 (en) | 2009-12-10 |
Family
ID=39594557
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/620,480 Expired - Fee Related US7736753B2 (en) | 2007-01-05 | 2007-01-05 | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ECD |
US12/540,710 Abandoned US20090301890A1 (en) | 2007-01-05 | 2009-08-13 | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ecd |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/620,480 Expired - Fee Related US7736753B2 (en) | 2007-01-05 | 2007-01-05 | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ECD |
Country Status (6)
Country | Link |
---|---|
US (2) | US7736753B2 (en) |
EP (1) | EP2118914A4 (en) |
JP (1) | JP2010515820A (en) |
KR (1) | KR20090095591A (en) |
CN (1) | CN101681706B (en) |
WO (1) | WO2008130371A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103409780A (en) * | 2013-08-13 | 2013-11-27 | 山东大学 | Method for carrying out surface alloy modification upon nano-grade porous gold |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007021980A2 (en) | 2005-08-12 | 2007-02-22 | Isotron Corporation | Compositionally modulated composite materials and methods for making the same |
US7768809B2 (en) * | 2008-10-02 | 2010-08-03 | International Business Machines Corporation | Wall nucleation propagation for racetrack memory |
BR122013014464B1 (en) | 2009-06-08 | 2020-10-20 | Modumetal, Inc | corrosion resistant multilayer coating on a substrate and electrodeposit method for producing a coating |
US8449948B2 (en) * | 2009-09-10 | 2013-05-28 | Western Digital (Fremont), Llc | Method and system for corrosion protection of layers in a structure of a magnetic recording transducer |
KR101161060B1 (en) * | 2009-11-30 | 2012-06-29 | 서강대학교산학협력단 | Arranging apparatus into columnar structure for nano particles and Method for arranging the same |
JP5424406B2 (en) * | 2010-02-09 | 2014-02-26 | 国立大学法人 長崎大学 | Compound semiconductor fine wire manufacturing method and compound semiconductor fine wire assembly |
KR101100664B1 (en) * | 2010-03-25 | 2012-01-03 | 충남대학교산학협력단 | Digital barcode nano-wire and System for bio-sensing using the same |
KR20140072047A (en) | 2011-08-17 | 2014-06-12 | 리전츠 오브 더 유니버시티 오브 미네소타 | Iron nitride permanent magnet and technique for forming iron nitride permanent magnet |
WO2014124135A2 (en) | 2013-02-07 | 2014-08-14 | Regents Of The University Of Minnesota | Iron nitride permanent magnet and technique for forming iron nitride permanent magnet |
BR112015022078B1 (en) | 2013-03-15 | 2022-05-17 | Modumetal, Inc | Apparatus and method for electrodepositing a nanolaminate coating |
WO2014145771A1 (en) * | 2013-03-15 | 2014-09-18 | Modumetal, Inc. | Electrodeposited compositions and nanolaminated alloys for articles prepared by additive manufacturing processes |
CN105283587B (en) | 2013-03-15 | 2019-05-10 | 莫杜美拓有限公司 | Nano-stack coating |
EA201500949A1 (en) | 2013-03-15 | 2016-02-29 | Модьюметл, Инк. | METHOD OF FORMING A MULTILAYER COATING, A COATING FORMED BY THE ABOVE METHOD, AND A MULTILAYER COATING |
CA2916483C (en) | 2013-06-27 | 2017-02-28 | Regents Of The University Of Minnesota | Iron nitride materials and magnets including iron nitride materials |
BR112016022561A2 (en) | 2014-03-28 | 2017-08-15 | Univ Minnesota | IRON NITRIDE MAGNETIC MATERIAL INCLUDING COATED NANOPARTICLES |
US9994949B2 (en) | 2014-06-30 | 2018-06-12 | Regents Of The University Of Minnesota | Applied magnetic field synthesis and processing of iron nitride magnetic materials |
US10002694B2 (en) | 2014-08-08 | 2018-06-19 | Regents Of The University Of Minnesota | Inductor including alpha″-Fe16Z2 or alpha″-Fe16(NxZ1-x)2, where Z includes at least one of C, B, or O |
US10072356B2 (en) | 2014-08-08 | 2018-09-11 | Regents Of The University Of Minnesota | Magnetic material including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16Z2 and α″-Fe16N2, where Z includes at least one of C, B, or O |
CA2957732A1 (en) | 2014-08-08 | 2016-02-11 | Regents Of The University Of Minnesota | Forming iron nitride hard magnetic materials using chemical vapor deposition or liquid phase epitaxy |
WO2016022711A1 (en) * | 2014-08-08 | 2016-02-11 | Regents Of The University Of Minnesota | Multilayer iron nitride hard magnetic materials |
AR102068A1 (en) | 2014-09-18 | 2017-02-01 | Modumetal Inc | METHODS OF PREPARATION OF ITEMS BY ELECTRODEPOSITION AND ADDITIVE MANUFACTURING PROCESSES |
EA201790643A1 (en) | 2014-09-18 | 2017-08-31 | Модьюметал, Инк. | METHOD AND DEVICE FOR CONTINUOUS APPLICATION OF NANO-LAYERED METAL COATINGS |
JP6631029B2 (en) * | 2015-04-21 | 2020-01-15 | Tdk株式会社 | Permanent magnet and rotating machine having the same |
CN105908228A (en) * | 2016-06-03 | 2016-08-31 | 河海大学 | Nickel alloy composition modulated multilayer alloy (CMMA) coating and preparation method thereof |
CN106011956A (en) * | 2016-06-03 | 2016-10-12 | 河海大学 | Electrochemical preparation method for CMMA structure capable of improving corrosion resistance of Ni-W alloy |
CN106011955A (en) * | 2016-06-03 | 2016-10-12 | 河海大学 | Corrosion-resistant and wear-resistant Ni-W/Al2O3 CMMA protective layer for maritime work machinery, and preparation method thereof |
CN105887148A (en) * | 2016-06-03 | 2016-08-24 | 河海大学 | Ni-B/SiC CMMA coating for marine equipment and preparation method thereof |
CN105908227A (en) * | 2016-06-03 | 2016-08-31 | 河海大学 | Electrochemical preparation method for CMMA structure capable of improving corrosion resistance and abrasion resistance of Ni-B alloy |
BR112019004508A2 (en) | 2016-09-08 | 2019-06-04 | Modumetal Inc | methods for obtaining laminated coatings on workpieces and articles made therefrom |
EP3601641A1 (en) | 2017-03-24 | 2020-02-05 | Modumetal, Inc. | Lift plungers with electrodeposited coatings, and systems and methods for producing the same |
CA3060619A1 (en) | 2017-04-21 | 2018-10-25 | Modumetal, Inc. | Tubular articles with electrodeposited coatings, and systems and methods for producing the same |
US11377749B1 (en) | 2017-10-17 | 2022-07-05 | Seagate Technology Llc | Electrodeposition of high damping magnetic alloys |
CN112272717B (en) | 2018-04-27 | 2024-01-05 | 莫杜美拓有限公司 | Apparatus, system, and method for producing multiple articles with nanolaminate coatings using rotation |
US11152020B1 (en) | 2018-05-14 | 2021-10-19 | Seagate Technology Llc | Electrodeposition of thermally stable alloys |
CN109795975A (en) * | 2018-12-28 | 2019-05-24 | 南京大学 | A kind of metal micro-/ nano linear array and preparation method thereof |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3866192A (en) * | 1973-03-01 | 1975-02-11 | Honeywell Inc | Plated wire memory element |
WO2001023645A1 (en) * | 1999-09-30 | 2001-04-05 | Research Institute Acreo Ab | Method for electrodeposition of metallic multilayers |
US20020031008A1 (en) * | 2000-09-08 | 2002-03-14 | Tohru Den | Magnetic device and method for manufacturing the same, and solid magnetic memory |
US20030048582A1 (en) * | 2001-09-07 | 2003-03-13 | Alps Electric Co., Ltd. | Soft magnetic film and thin film magnetic head using soft magnetic film, process for manufacturing soft magnetic film and process for manufacturing thin film magnetic head |
US6611034B2 (en) * | 2000-09-08 | 2003-08-26 | Canon Kabushiki Kaisha | Magnetic device and solid-state magnetic memory |
US20040027715A1 (en) * | 2002-08-12 | 2004-02-12 | International Business Machines | Method for producing multiple magnetic layers of materials with known thickness and composition using a one-step electrodeposition process |
US6776891B2 (en) * | 2001-05-18 | 2004-08-17 | Headway Technologies, Inc. | Method of manufacturing an ultra high saturation moment soft magnetic thin film |
US20040209376A1 (en) * | 1999-10-01 | 2004-10-21 | Surromed, Inc. | Assemblies of differentiable segmented particles |
US20040251232A1 (en) * | 2003-06-10 | 2004-12-16 | International Business Machines Corporation | Method of fabricating a shiftable magnetic shift register |
US20050186686A1 (en) * | 2004-02-25 | 2005-08-25 | International Business Machines Corporation | Method of fabricating data tracks for use in a magnetic shift register memory device |
US6937446B2 (en) * | 2000-10-20 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
US20080156654A1 (en) * | 2006-08-08 | 2008-07-03 | Joseph Wang | Identification Based On Compositionally Encoded Nanostructures |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2544845B2 (en) * | 1990-08-23 | 1996-10-16 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Magnetic thin film, laminate, magnetic recording head, magnetic shield, and method for producing laminate |
US5702831A (en) * | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
US6741019B1 (en) * | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
JP3833512B2 (en) * | 2000-10-20 | 2006-10-11 | 株式会社東芝 | Magnetoresistive effect element |
US6888703B2 (en) * | 2001-09-17 | 2005-05-03 | Headway Technologies, Inc. | Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads |
CN100410166C (en) * | 2004-08-13 | 2008-08-13 | 清华大学 | Magnetic field inducing method for growing magnetic one dimension nano line array |
CN100431188C (en) * | 2005-06-09 | 2008-11-05 | 上海交通大学 | Method for making magnetosensitive device based on soft magnetic multilayer huge magnetoimpedance effect |
US7539051B2 (en) * | 2007-01-05 | 2009-05-26 | International Business Machines Corporation | Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same |
-
2007
- 2007-01-05 US US11/620,480 patent/US7736753B2/en not_active Expired - Fee Related
- 2007-09-25 KR KR1020097012294A patent/KR20090095591A/en active IP Right Grant
- 2007-09-25 EP EP07874503A patent/EP2118914A4/en not_active Withdrawn
- 2007-09-25 JP JP2009544828A patent/JP2010515820A/en active Pending
- 2007-09-25 WO PCT/US2007/020646 patent/WO2008130371A1/en active Search and Examination
- 2007-09-25 CN CN2007800480505A patent/CN101681706B/en not_active Expired - Fee Related
-
2009
- 2009-08-13 US US12/540,710 patent/US20090301890A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3866192A (en) * | 1973-03-01 | 1975-02-11 | Honeywell Inc | Plated wire memory element |
WO2001023645A1 (en) * | 1999-09-30 | 2001-04-05 | Research Institute Acreo Ab | Method for electrodeposition of metallic multilayers |
US20040209376A1 (en) * | 1999-10-01 | 2004-10-21 | Surromed, Inc. | Assemblies of differentiable segmented particles |
US20020031008A1 (en) * | 2000-09-08 | 2002-03-14 | Tohru Den | Magnetic device and method for manufacturing the same, and solid magnetic memory |
US6611034B2 (en) * | 2000-09-08 | 2003-08-26 | Canon Kabushiki Kaisha | Magnetic device and solid-state magnetic memory |
US6717777B2 (en) * | 2000-09-08 | 2004-04-06 | Canon Kabushiki Kaisha | Magnetic device with porous layer and method for manufacturing the same, and solid magnetic memory |
US6937446B2 (en) * | 2000-10-20 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
US6776891B2 (en) * | 2001-05-18 | 2004-08-17 | Headway Technologies, Inc. | Method of manufacturing an ultra high saturation moment soft magnetic thin film |
US20030048582A1 (en) * | 2001-09-07 | 2003-03-13 | Alps Electric Co., Ltd. | Soft magnetic film and thin film magnetic head using soft magnetic film, process for manufacturing soft magnetic film and process for manufacturing thin film magnetic head |
US20040027715A1 (en) * | 2002-08-12 | 2004-02-12 | International Business Machines | Method for producing multiple magnetic layers of materials with known thickness and composition using a one-step electrodeposition process |
US20040251232A1 (en) * | 2003-06-10 | 2004-12-16 | International Business Machines Corporation | Method of fabricating a shiftable magnetic shift register |
US20050186686A1 (en) * | 2004-02-25 | 2005-08-25 | International Business Machines Corporation | Method of fabricating data tracks for use in a magnetic shift register memory device |
US20080156654A1 (en) * | 2006-08-08 | 2008-07-03 | Joseph Wang | Identification Based On Compositionally Encoded Nanostructures |
Non-Patent Citations (4)
Title |
---|
Cho et al. ("Synthesis and magnetic anisotropy of multilayered Co/Cu nanowire array," Journal of Magnetism and Magnetic Materials, 304, 2006, pages 213-215). * |
Fedosyuk et al. ("Granular AgCo and AgCuCo nanowires," Journal of Magnetism and Magnetic Materials, Volumes 198-199, 1 June 1999, Pages 246-247). * |
Leith, S.D., et al. "In-situ fabrication of sacrificial layers in electrodeposited NiFe microstructures" J. Micromech. Microeng. (1999), p.97-104. * |
Liu et al. ("Synthesis and magnetic properties of multilayer Ni/Cu and NiFe/Cu nanowires," PRAMANA, Volume 67, no. 1, pages 85-91, July 2006). * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103409780A (en) * | 2013-08-13 | 2013-11-27 | 山东大学 | Method for carrying out surface alloy modification upon nano-grade porous gold |
Also Published As
Publication number | Publication date |
---|---|
US7736753B2 (en) | 2010-06-15 |
CN101681706A (en) | 2010-03-24 |
WO2008130371A1 (en) | 2008-10-30 |
KR20090095591A (en) | 2009-09-09 |
CN101681706B (en) | 2011-11-09 |
JP2010515820A (en) | 2010-05-13 |
EP2118914A4 (en) | 2012-01-18 |
EP2118914A1 (en) | 2009-11-18 |
US20080166584A1 (en) | 2008-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7736753B2 (en) | Formation of nanostructures comprising compositionally modulated ferromagnetic layers by pulsed ECD | |
Um et al. | Fabrication of long-range ordered aluminum oxide and Fe/Au multilayered nanowires for 3-D magnetic memory | |
US6611034B2 (en) | Magnetic device and solid-state magnetic memory | |
US6717777B2 (en) | Magnetic device with porous layer and method for manufacturing the same, and solid magnetic memory | |
Pattanaik et al. | Electrodeposition of hard magnetic films and microstructures | |
Ghemes et al. | Controlled electrodeposition and magnetic properties of Co35Fe65 nanowires with high saturation magnetization | |
Tabakovic et al. | Preparation of metastable CoFeNi alloys with ultra-high magnetic saturation (Bs= 2.4–2.59 T) by reverse pulse electrodeposition | |
Brankovic et al. | Pulse electrodeposition of 2.4 T Co/sub 37/Fe/sub 63/alloys at nanoscale for magnetic recording application | |
JP2004237429A (en) | Functional device and method of manufacturing the same, vertical magnetic record medium, magnetic record reproducing unit and information processing apparatus | |
Liu et al. | High moment FeCoNi alloy thin films fabricated by pulsed-current electrodeposition | |
Varea et al. | Ordered arrays of ferromagnetic, compositionally graded Cu 1− x Ni x alloy nanopillars prepared by template-assisted electrodeposition | |
US20080182100A1 (en) | Magnetic anodized aluminium oxide with high oxidation resistance and method for its fabrication | |
JP2013147747A (en) | ELECTRODEPOSITION METHOD OF CoFe ALLOY | |
García-Torres et al. | Preparation and giant magnetoresistance of electrodeposited Co–Ag/Ag multilayers | |
ECD | Deligianni et al. | |
Péter et al. | Electrodeposition of Co–Cu–Zn/Cu multilayers: influence of anomalous codeposition on the formation of ternary multilayers | |
Long et al. | Electrodeposition of Sm–Co film with high Sm content from aqueous solution | |
Gong et al. | Optimization of magnetoresistive sensitivity in electrodeposited FeCoNi/Cu multilayers | |
Liu et al. | Synthesis and magnetic properties of multilayer Ni/Cu and NiFe/Cu nanowires | |
JPH0636929A (en) | Plated magnetic thin film and manufacture thereof | |
KR100858507B1 (en) | Preparation method for soft magnetic ni-fe permalloy thin film and soft magnetic ni-fe permalloy thin film using thereof | |
Péter et al. | Magnetic/Non-magnetic Metallic Multilayer Films | |
Wang et al. | On low-temperature ordering of FePt nanowires | |
Dobosz et al. | Co-Ru alloy nanowire arrays embedded in anodic alumina membranes: Annealing effect | |
Pandya et al. | GMR in excess of 10% at room temperature and low magnetic fields in electrodeposited Cu/Co nano-multilayer structures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |
|
AS | Assignment |
Owner name: GLOBALFOUNDRIES U.S. 2 LLC, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INTERNATIONAL BUSINESS MACHINES CORPORATION;REEL/FRAME:036550/0001 Effective date: 20150629 |
|
AS | Assignment |
Owner name: GLOBALFOUNDRIES INC., CAYMAN ISLANDS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GLOBALFOUNDRIES U.S. 2 LLC;GLOBALFOUNDRIES U.S. INC.;REEL/FRAME:036779/0001 Effective date: 20150910 |