US20090278198A1 - Deep source electrode MOSFET - Google Patents
Deep source electrode MOSFET Download PDFInfo
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- US20090278198A1 US20090278198A1 US12/460,434 US46043409A US2009278198A1 US 20090278198 A1 US20090278198 A1 US 20090278198A1 US 46043409 A US46043409 A US 46043409A US 2009278198 A1 US2009278198 A1 US 2009278198A1
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- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 238000009413 insulation Methods 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 5
- 239000007943 implant Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Abstract
Description
- This application is based on and claims priority to the of U.S. Provisional Application Ser. No. 60/836,639, filed on Aug. 9, 2006, entitled Termination Design for Deep Source Electrode MOSFET, to which a claim of priority is hereby made and the disclosure of which is incorporated by reference.
- US Patent Publication No. 2006/0033154, assigned to the assignee of the present application and incorporated by reference, discloses a semiconductor power device having deep source electrodes which can be suitable for a power MOSFET with up to a 300V rating and a lower resistivity drift region. For example, a conventional 100V device may use 1.75 ohm-cm drift region while a device employing deep source electrodes may have a 0.25 ohm-cm drift region.
- Conventional MOSFET designs may use a termination structure composed of diffused guard rings to reduce the electric field curvature, but still rely on the drift region to block a significant amount of voltage. If a conventional termination were used on a 100V MOSFET designed with a deep source electrode, the termination would only support about 30V due to the low-resistivity drift region.
- Thus, a new termination that is capable of blocking a voltage equal or greater than the active cells of a deep source electrode MOSFET is desired. It is also desired to have a simple process to form the termination when fabricating a deep source electrode MOSFET.
- A device, e.g. a MOSFET, that includes deep source electrodes is able to block a high reverse voltage with a low-resistivity drift region because the deep source electrodes create a horizontal electric field that depletes the drift region and enable the creation of a uniform electric field.
- According to one aspect of the present invention, the portion of the termination closest to the last active cell is identical to the active cell (except that it does not include a source region) in order to avoid disturbing the depletion effect.
- According to another aspect of the present invention, the termination region of the device includes an insulated field plate spaced above the surface of the semiconductor by an insulating material in order to avoid high electric field points outside the active region of the device.
- According to yet another aspect of the present invention, the termination region includes an EQR trench and a drain contact at the end of the termination in order to block any leakage that may occur near the semiconductor surface, and to ensure a constant drain voltage on the top edge of the device.
- A termination according to the present invention allows a device using deep source electrodes to be terminated using a minimum lateral width. Moreover, a termination according to the present invention mimics the active area features, to avoid adding any process complexity.
- Simulations have shown that, when using a termination according to the present invention, the highest electric field occurs in the region between the termination and the active region, and that there are no high field points elsewhere in the termination, which can allow for a short field plate. Thus, unlike conventional guard ring and field plate terminations, the field plate is not relied on to smooth out junction curvature in that all of the high field is contained between the last active cell trench and the termination trench.
- Other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.
-
FIG. 1 illustrates a cross-sectional view of a termination region according to one embodiment of the present invention. -
FIGS. 2A-2L illustrate selected steps in a process for fabrication of a device according to the present invention. -
FIG. 3 illustrates another embodiment of the present invention. -
FIG. 4 illustrates yet another embodiment of the present invention. - Referring to
FIG. 1 , a semiconductor device according to one embodiment of the present invention is preferably a power MOSFET that includes, anactive region 56, andtermination region 58, which surroundsactive region 56.Active region 56, which in the preferred embodiment is the same active region disclosed in US 2006/00331514, includes a plurality of spaceddeep source trenches 10 formed in asemiconductor body 12, which can be an epitaxially grown silicon body of one conductivity (e.g. N type) disposed over asilicon substrate 13 of the same conductivity.Termination region 58 includes a plurality of spacedtermination trenches 14, and anEQR trench 16 spaced fromtrenches 14, which surroundactive region 56. Eachtrench 10 includes athick oxide body 21 disposed in the interior and lining at least the bottom and a portion of the sidewalls thereof. Thickoxide 21 inEQR trench 16 reaches the top surface ofbody 12, while thethick oxide 21 in thetermination trench 14 closest toactive region 56 extends to the top surface ofbody 12 at one sidewall thereof, and only covers the opposing sidewall closest to theactive region 56 partially, i.e. terminates below the top surface ofbody 12.Active region 56 further includeschannel regions 62 of the opposite conductivity to body 12 (e.g. P type), andsource regions 60 of the same conductivity asbody 12 formed inchannel regions 62. Note that onechannel region 62 extends intermination region 58 of the device and does not include asource region 60 therein.Active region 56 further includes a plurality ofinsulated gate electrodes 38. Eachgate electrode 38 is insulated from arespective channel region 62 by agate oxide body 32, which is thinner thanthick oxide body 21 disposed intrenches 10.Active region 56 further includes a plurality ofdeep source electrodes 24 which are insulated from, but extend throughgate electrodes 38.Deep source electrodes 24 are ohmically coupled to asource contact 64, which is also ohmically coupled tosource regions 60, and tochannel regions 62 through a highconductivity contact region 54 of the same conductivity aschannel regions 62. - According to one aspect of the present invention,
termination trenches 14 are as deep assource trenches 10. Furthermore,termination region 58 includes afield relief electrode 26 preferably comprised of polysilicon, that includes afinger 27 residing in eachtermination trench 14, and afield plate portion 25 that extends away fromactive region 56 and over aninsulation body 66 residing onbody 12 betweentermination trenches 14 andEQR trench 16. Furthermore, anEQR electrode 28, which is preferably comprised of polysilicon, is disposed insideEQR trench 16. AnEQR ring 50 is disposed over and ohmically coupled toEQR electrode 28 and may be extended and coupled tobody 12 near the edge of the die (to the right of electrodes 28), wherebyEQR trench 16 and the electrode contained therein serve to apply a constant drain voltage at the edge of the termination and block any surface leakage that may occur. - The device further includes a
gate bus 40, preferably comprised of polysilicon, which is insulated from and disposed overfield plate portion 25 oftermination electrode 26.Gate bus 40 is electrically connected togate electrodes 38. Ametallic gate runner 52, which resides overbus 40 electricallycouples bus 40 to a gate contact pad. The device further includes adrain contact 15, coupled tosubstrate 13. - Referring now to
FIG. 2A , to fabricate a device according to the present invention, a plurality ofsource trenches 10,termination trenches 14, andEQR trench 16 are formed insemiconductor body 12 using any known method. In one embodiment,trenches trenches trenches trenches trenches - Referring next to
FIG. 2B , in the next step thick oxide is formed on at least the sidewalls and the bottom oftrenches body 12, and then a thick (e.g. 4000 Å)polysilicon layer 18 may be deposited thereon. Thereafter,polysilicon layer 18 is oxidized to obtain athick oxide layer 20 comprised of poly oxide on at least the sidewalls and the bottom oftrenches thick oxide layer 20 over all exposed surfaces ofbody 12 including the sidewalls and the bottom of 10, 14, 16.FIG. 2C illustrates the result after athick oxide layer 20 is formed using either method. - Referring next to
FIG. 2D ,polysilicon 22 is deposited to fill at leasttrenches polysilicon 22 may cover all open surfaces of the structure illustrated byFIG. 2C . Thereafter,polysilicon 22 is patterned using a mask and etch process to leavepolysilicon source electrodes 24 insource trenches 10,field relief electrode 26, andEQR electrode 28 inEQR trench 16, as illustrated byFIG. 2E . Note that in this step a portion ofthick oxide 22 on all sidewalls oftrenches 10 is etched back insidetrenches 10, andthick oxide 22 on only one sidewall of trench 14 (the sidewall closest to trenches 10) is etched back inside the trench. - Next, the exposed surfaces of
electrodes thin oxide layer 30 thereon. Note that in this step the exposed surfaces of the sidewalls oftrenches 10, and the sidewall oftrench 14 are also oxidized to formgate oxide 32 thereon. Preferably, dopants to form a channel region are then implanted to form achannel implant region 34 before proceeding to the next step. - Referring next to
FIG. 2G ,polysilicon 36 is deposited and doped, and then etched to leavepolysilicon gate electrodes 38 insidetrenches adjacent gate oxide 32, andgate bus 40 as illustrated byFIG. 2H . Thereafter, in an oxidation step, the exposed surfaces ofgate electrodes 38 andgate bus 40 are oxidized leavingoxide 42 thereon. A source mask is then applied and dopants for forming source regions are implanted through the mask openings into channel regions to formsource implant regions 44. Next, a low density oxide body 46 (e.g. TEOS) is deposited on the arrangement shown byFIG. 2J , and patterned in appropriate mask etch steps to provide openings tobody 12 andelectrodes FIG. 2K . Note that in this step,source implant regions 44 are etched through to at least the channel region below. Note further that the openings so provided allow the source contact to make electrical contact to thesource electrodes 24 in each active cell locally. Referring toFIG. 2L , in an alternative embodiment,electrodes 24 may make electrical contact with the source contact remotely (outside each active cell). - Thereafter,
source implant region 44 is driven in a source drive, highconductivity contact regions 54 are implanted followed by an anneal, and optionally titanium is deposited and a thermal step is applied to obtain a silicide layer atop the exposed surfaces ofbody 12. Front metal is deposited and patterned to obtainsource contact 48,EQR ring 50, andgate runner 52, and draincontact 15 is applied using any known method as illustrated byFIG. 1 . - Note that in a device according to the present invention,
channel region 62 that extends intotermination region 58 includes ahigh conductivity region 54 toshort source contact 64 the channel region. Note further thattermination trench 14 closest toactive region 56 also contains a non-functional insulated gate electrode at a sidewall that is closest toactive region 56. The oxide thickness underfield plate 25 is preferably the same as the thick oxide inside the trenches in order to support the full breakdown voltage betweenfield plate 56 andsemiconductor body 12 under the field plate. - In an alternative embodiment, it is possible to have more than two termination trenches, which would effectively extend the lateral width of
field plate 25. - Referring to
FIG. 3 , in which like numerals identify like features in a device according to a second embodiment,termination region 58 includes only onesource trench 14, which is the same depth and width assource trenches 10. - Referring to
FIG. 4 , in which like numerals identify like features, in a device according to the third embodiment,termination trench 14, is the same depth but wider thansource trenches 10. - In all embodiments, preferably,
EQR trench 14 is the same depth and width assource trenches 10. - Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.
Claims (21)
Priority Applications (1)
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US12/460,434 US20090278198A1 (en) | 2006-08-09 | 2009-07-16 | Deep source electrode MOSFET |
Applications Claiming Priority (3)
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US83663906P | 2006-08-09 | 2006-08-09 | |
US11/890,849 US7579650B2 (en) | 2006-08-09 | 2007-08-08 | Termination design for deep source electrode MOSFET |
US12/460,434 US20090278198A1 (en) | 2006-08-09 | 2009-07-16 | Deep source electrode MOSFET |
Related Parent Applications (1)
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US11/890,849 Continuation US7579650B2 (en) | 2006-08-09 | 2007-08-08 | Termination design for deep source electrode MOSFET |
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US11/890,849 Active US7579650B2 (en) | 2006-08-09 | 2007-08-08 | Termination design for deep source electrode MOSFET |
US12/460,434 Abandoned US20090278198A1 (en) | 2006-08-09 | 2009-07-16 | Deep source electrode MOSFET |
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Cited By (4)
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US20100078694A1 (en) * | 2008-09-30 | 2010-04-01 | Infineon Technologies Austria Ag | Semiconductor component having a drift zone and a drift control zone |
US20110084332A1 (en) * | 2009-10-08 | 2011-04-14 | Vishay General Semiconductor, Llc. | Trench termination structure |
US20110284953A1 (en) * | 2010-05-21 | 2011-11-24 | SIM-BCD Semiconductor Manufacturing Limited | Power trench mosfet rectifier |
US20130248986A1 (en) * | 2012-03-22 | 2013-09-26 | Excelliance Mos Corporation | Power mosfet |
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US7884390B2 (en) * | 2007-10-02 | 2011-02-08 | Fairchild Semiconductor Corporation | Structure and method of forming a topside contact to a backside terminal of a semiconductor device |
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US8653587B2 (en) * | 2012-02-13 | 2014-02-18 | Force Mos Technology Co., Ltd. | Trench MOSFET having a top side drain |
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US8951867B2 (en) | 2012-12-21 | 2015-02-10 | Alpha And Omega Semiconductor Incorporated | High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices |
US8753935B1 (en) | 2012-12-21 | 2014-06-17 | Alpha And Omega Semiconductor Incorporated | High frequency switching MOSFETs with low output capacitance using a depletable P-shield |
US8809948B1 (en) | 2012-12-21 | 2014-08-19 | Alpha And Omega Semiconductor Incorporated | Device structure and methods of making high density MOSFETs for load switch and DC-DC applications |
US9105494B2 (en) | 2013-02-25 | 2015-08-11 | Alpha and Omega Semiconductors, Incorporated | Termination trench for power MOSFET applications |
US9018700B2 (en) * | 2013-03-14 | 2015-04-28 | Fairchild Semiconductor Corporation | Direct-drain trench FET with source and drain isolation |
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US9178015B2 (en) * | 2014-01-10 | 2015-11-03 | Vishay General Semiconductor Llc | Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications |
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US11387348B2 (en) | 2019-11-22 | 2022-07-12 | Nxp Usa, Inc. | Transistor formed with spacer |
US11329156B2 (en) | 2019-12-16 | 2022-05-10 | Nxp Usa, Inc. | Transistor with extended drain region |
KR102154451B1 (en) * | 2019-12-24 | 2020-09-10 | 매그나칩 반도체 유한회사 | Semiconductor Device and Fabricating Method Thereof |
US11075110B1 (en) | 2020-03-31 | 2021-07-27 | Nxp Usa, Inc. | Transistor trench with field plate structure |
US11217675B2 (en) | 2020-03-31 | 2022-01-04 | Nxp Usa, Inc. | Trench with different transverse cross-sectional widths |
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2007
- 2007-08-08 US US11/890,849 patent/US7579650B2/en active Active
- 2007-08-09 WO PCT/US2007/017744 patent/WO2008021204A2/en active Application Filing
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2009
- 2009-07-16 US US12/460,434 patent/US20090278198A1/en not_active Abandoned
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100078694A1 (en) * | 2008-09-30 | 2010-04-01 | Infineon Technologies Austria Ag | Semiconductor component having a drift zone and a drift control zone |
US7825467B2 (en) * | 2008-09-30 | 2010-11-02 | Infineon Technologies Austria Ag | Semiconductor component having a drift zone and a drift control zone |
US20110084332A1 (en) * | 2009-10-08 | 2011-04-14 | Vishay General Semiconductor, Llc. | Trench termination structure |
US20110284953A1 (en) * | 2010-05-21 | 2011-11-24 | SIM-BCD Semiconductor Manufacturing Limited | Power trench mosfet rectifier |
US8581336B2 (en) * | 2010-05-21 | 2013-11-12 | Tao Long | Power trench MOSFET rectifier |
US20130248986A1 (en) * | 2012-03-22 | 2013-09-26 | Excelliance Mos Corporation | Power mosfet |
US8664714B2 (en) * | 2012-03-22 | 2014-03-04 | Excelliance Mos Corporation | Power MOSFET |
Also Published As
Publication number | Publication date |
---|---|
WO2008021204A3 (en) | 2008-04-17 |
WO2008021204A2 (en) | 2008-02-21 |
US7579650B2 (en) | 2009-08-25 |
WO2008021204B1 (en) | 2008-06-12 |
US20080035993A1 (en) | 2008-02-14 |
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