US20080206945A1

US20080206945A1 - Process for forming differential spaces in electronics device integrated on a semiconductor substrate

Info

Publication number: US20080206945A1
Application number: US11/680,507
Authority: US
Inventors: Giorgio Servalli; Giulio Albini; Carlo Cremonesi
Original assignee: STMicroelectronics SRL
Current assignee: STMicroelectronics SRL
Priority date: 2007-02-28
Filing date: 2007-02-28
Publication date: 2008-08-28
Also published as: US20100047980A1; US7910444B2

Abstract

A forms spacers in a electronic device integrated on a semiconductor substrate that includes: first and second transistors each comprising a gate electrode projecting from the substrate and respective source/drain regions. The process comprises: forming in cascade a first protective layer and a first conformal insulating layer of a first thickness on the whole electronic device; forming a first mask to cover the first transistor; removing the first conformal insulating layer not covered by the first mask; removing the first mask; forming a second conformal insulating layer of a second thickness on the whole device; and removing the insulating layers until the protective layer is exposed to form first spacers of a first width on the side walls of the gate electrodes of the first transistor and second spacers of a second width on the side walls of the gate electrodes of the second transistor.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention
The present invention relates to a process for forming of differential spacers in electronic devices integrated on a semiconductor substrate.
The invention particularly, but not exclusively, relates to a process for forming differential spacers in floating gate non-volatile memory devices and the following description is made with reference to this field of application by way of illustration only.
2. Description of the Related Art
As it is well known, non-volatile memory electronic devices, for example of the Flash type, integrated on semiconductor substrate comprise a matrix of non-volatile memory cells organized in rows, called word lines, and columns, called bit lines.
Each single non-volatile memory cell comprises a MOS transistor wherein the gate electrode, arranged above the channel region, is floating, i.e., it shows high impedance in DC towards all the other terminals of the same cell and of the circuit wherein the cell is inserted.
The cell also comprises a second electrode, called the control gate, which is capacitively coupled to the floating gate electrode through an intermediate dielectric layer, so called interpoly. This second electrode is driven through suitable control voltages. The other electrodes of the transistor are the usual drain, source terminals.
The cells belonging to a same word line share the electric line which drives the respective control gates, while the cells belonging to a same bit line share the drain terminals.
Conventionally, memory electronic devices also comprise control circuitry associated with the matrix of memory cells. The control circuitry comprises conventional high voltage (HV) MOS transistors, each one having a source region and a drain region separated by a channel region. A gate electrode is then formed on the channel region and insulated therefrom by a gate oxide layer.
Moreover, spacers are present on the side walls of the gate electrodes.
However, in new generation memory devices the circuitry also comprises low voltage (LV) transistors with high performances in particular for embedded applications and for carrying out, at high speed, the complex management algorithms of the memory devices themselves. The process steps for forming these advanced technology LV transistors, especially those pertaining to the formation of the junction implants (source and drain regions) and of the spacers are particularly complex. In particular, the integration of the high performance LV transistors with the HV transistors handling the high voltages for writing to the memory cells is further complex, with the need of introducing differential spacers and junction implants.
The known process solutions currently in use provide that the circuitry spacers are formed also in the memory matrix, possibly with differential processes, and that the circuitry spacers are formed by nitride films and rather thick oxide layers.
Although advantageous under several aspects, this solution shows several drawbacks.
In fact, these process steps are not necessary for the formation of non-volatile memory cells, for example, with NOR or NAND architecture, whose source and drain regions are usually defined in a self-aligned way to the gate electrodes and for which the spacers are non-necessary elements which can become a heavy limitation for the scalability of the cell, in particular for the salicidation of the drain regions, for filling with premetal dielectric layers, for the integration of the drain contact and for the sustainability of the reading disturbances.

BRIEF SUMMARY OF THE INVENTION

One embodiment of the invention is a process for forming, in a same electronic device integrated on a semiconductor substrate, electronic components with spacers of different widths, having such structural and functional characteristics as to minimize the overall dielectric constant of the dielectric layers which separate some electronic components of the device, thereby overcoming the limits and/or drawbacks still limiting the devices formed according to the prior art.
An embodiment of this invention is directed to a process for forming, by more insulating layers, spacers of greater width.
According to an embodiment of the invention, a process forms spacers in an electronic device integrated on a semiconductor substrate that includes:
a first portion wherein first transistors are formed each comprising a gate electrode projecting from the semiconductor substrate and at least first portions of respective source/drain regions,
a second portion wherein second transistors are formed each comprising a gate electrode projecting from the semiconductor substrate and at least first portions of respective source/drain regions, the process comprising the step of:
forming in cascade a first protective layer of a first thickness and a first conformal insulating layer of a first thickness on the whole electronic device, forming a first mask to cover the first portion,
removing the first conformal insulating layer not covered by the first mask,
removing the first mask,
forming a second conformal insulating layer of a second thickness on the whole device,
removing the insulating layers until the protective layer is exposed to form first spacers of a first width on the side walls of the gate electrodes of the first portion and second spacers of a second width on the side walls of the gate electrodes of the second portion.
According to another embodiment of the invention, a process for forming spacers in a electronic device integrated on a semiconductor substrate comprises at least:
a first portion wherein first transistors each comprising a gate electrode projecting from the semiconductor substrate and at least first portions of respective source/drain regions (8 a 1) are formed,
a second portion wherein second transistors (3) each comprising a gate electrode projecting from the semiconductor substrate and at least first portions of respective source/drain regions are formed, the process comprising the step of:
forming in cascade a first protective layer of a first thickness and a first conformal insulating layer of a first thickness on the whole electronic device,
removing the first conformal insulating layer until the protective layer is exposed to form first spacers on the side walls of the gate electrodes,
forming a first mask to cover the first portion,
removing the first spacers not covered by the first mask,
removing the first mask,
forming a second conformal insulating layer of a second thickness on the whole device,
removing the third conformal insulating layer until the protective layer is exposed to form second spacers adjacent to the first spacers and on the side walls of the gate electrodes of the second portion.
Yet another embodiment of the invention is directed to a process for forming spacers in a electronic device integrated on a semiconductor substrate which comprises a plurality of portions wherein respective transistors, each comprising a gate electrode projecting from the semiconductor substrate, and at least first portions of respective source/drain regions are formed, the process comprising the steps of:
a) forming in cascade a protective layer and an insulating layer on the whole electronic device,
b) forming a mask for covering a portion of the device,
c) removing the conformal insulating layer not covered by the mask,
d) removing the mask,
e) forming another conformal insulating layer on the whole electronic device,
f) forming another mask to cover the preceding portion and another portion of the device,
g) removing the other conformal insulating layer not covered by the other mask,
h) removing the other mask,
i) repeating the steps e) to h) until a sole portion of the device, wherein the spacers are to be formed, is coated by a conformal insulating layer,
l) forming a final conformal insulating layer of a final thickness on the whole device,
m) removing the insulating layers until the protective layer is exposed to form a plurality of spacers on respective side walls of the gate electrodes of the plurality of portions of the device.
A further embodiment relates to a process for forming spacers in a electronic device integrated on a semiconductor substrate which comprises a plurality of portions wherein respective transistors are formed each comprising a gate electrode projecting from the semiconductor substrate and at least first portions of respective source/drain regions, the process comprising the steps of:
a) forming in cascade a protective layer and a conformal insulating layer on the whole electronic device,
b) removing the conformal insulating layer until the protective layer is exposed for forming spacers on the side walls of the gate electrodes,
c) forming a mask to cover a portion of the device,
d) removing the uncovered spacers from the mask,
e) removing the mask,
f) forming another conformal insulating layer on the whole electronic device,
g) removing another conformal insulating layer until the protective layer is exposed to form other spacers on the preceding spacers (11 a) and on the side walls of the gate electrodes of the remaining portions,
h) forming another mask to cover the preceding portion and another portion,
i) removing the other spacers not covered by the other mask,
l) removing the other mask,
m) repeating the steps f) to l) until a sole portion of the device, wherein the spacers are to be formed, is provided with spacer,
n) forming a final conformal insulating layer of a final thickness on the whole device,
o) removing a final conformal insulating layer until the protective layer is exposed to form last spacers adjacent to the preceding spacers and on the side walls of the gate electrodes of the last portion of the device, wherein the spacers are to be formed.
The characteristics and the advantages of the process according to an embodiment the invention will be apparent from the following description of an embodiment thereof given by way of indicative and non-limiting example with reference to the annexed drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

A more complete understanding of the method and apparatus of the present invention may be acquired by reference to the following Detailed Description when taken in conjunction with the accompanying Drawings wherein:

FIGS. 1 a 1, 2 a 1, 3 a 1, 4 a 1, 5 a 1, 6 a 1, 7 a 1, 8 a 1, and 9 a 1 show vertical section views of a first portion of a memory electronic device, during some forming steps of a process according to a first embodiment of the invention,

FIGS. 1 a 2, 2 a 2, 3 a 2, 4 a 2, 5 a 2, 6 a 2, 7 a 2, 8 a 2, and 9 a 2 show vertical section views of a second portion of a memory electronic device, during some forming steps of process according to the first embodiment of the invention,

FIGS. 1 a 3, 2 a 3, 3 a 3, 4 a 3, 5 a 3, 6 a 3, 7 a 3, 8 a 3, and 9 a 3 show vertical section views of a third portion of a memory electronic device, during some forming steps of a process according to the first embodiment of the invention,

FIGS. 10 a 1, 11 a 1, 12 a 1, 13 a 1, 14 a 1, 15 a 1, 16 a 1, and 17 a 1 show vertical section views of a first portion of a memory electronic device, during some forming steps of a process according to a second embodiment of the invention,

FIGS. 10 a 2, 11 a 2, 12 a 2, 13 a 2, 14 a 2, 15 a 2, 16 a 2, and 17 a 2 show vertical section views of a second portion of a memory electronic device, during some forming steps of the process according to the second embodiment of the invention,

FIGS. 10 a 3, 11 a 3, 12 a 3, 13 a 3, 14 a 3, 15 a 3, 16 a 3, and 17 a 3 show vertical section views of a third portion of a memory electronic device, during some forming steps of the process according to the second embodiment of the invention,

FIGS. 18 a 1, 18 a 2 and 18 a 3 are images of portions of the final memory electronic device formed with the process according to an embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

With reference to these figures, a non-volatile memory electronic device 1 formed on a semiconductor substrate 2 is described.
The process steps and the structures described hereafter do not form a complete process flow for forming integrated circuits.
The figures which represent cross sections of portions of an integrated circuit during the formation are not drawn to scale, but are instead drawn so as to show process steps of some embodiments of the invention.
The process steps shown can be put into practice together with the forming techniques of the integrated circuits currently used in the field and only those commonly used process steps helpful for the comprehension of the present invention are included.
In particular, the process according to an embodiment of the invention will be described with reference to the formation of a memory electronic device 1 comprising a matrix of non-volatile memory cells with NOR architecture by mere way of example.
For example, a process will be described for forming three spacers of different width: first thin spacers for the memory cell, for example of about 50 nm of width, formed for example in the sole drain region, second spacers of great width for the HV transistors, for example of about 160 nm and third spacers of intermediate width for the LV transistors, for example of about 100 nm.
Nothing however forbids that the process according to an embodiment of the invention can be advantageously used for forming two sole spacers of different widths.
In particular, with reference to FIGS. 1 a 1 to 9 a 3, a memory electronic device 1 is shown formed on a substrate 2 which comprises three distinct portions:
a first portion, shown with reference to FIGS. 1 a 1, . . . 9 a 1, wherein high voltage HV transistors 4 are integrated,
a second portion, shown with reference to FIGS. 1 a 2, 2 a 2, . . . 9 a 2, wherein low voltage LV transistors 5 with high performance are integrated, and
a third portion, shown with reference to FIGS. 1 a 3, 2 a 3, . . . 9 a 3, wherein a matrix of memory cells 3 is integrated, wherein the memory cells are organized in rows, called word lines, and columns, called bit lines.
The process according to an embodiment of the invention provides, in a conventional way, the formation of wells of the P and N type and of active areas delimited by insulation structures in the semiconductor substrate 2.
On these active areas respective gate oxide layers 6 a 1, 6 a 2, 6 a 3, respective gate electrodes 7 a 1, 7 a 2, 7 a 3 and respective source/drain regions 8 a 1, 8 a 2, 8 a 31/8 a 32 self-aligned respectively to the gate electrodes 7 a 1, 7 a 2, 7 a 3 of the HV transistors 4, of the LV transistors 5 and of the memory cells 3 are formed as shown in FIGS. 1 a 1-1 a 3.
According to an embodiment of the invention, on the whole device 1 a protective layer 10 is formed. For example, a protective layer 10 is formed by a silicon nitride layer of thickness L_Nequal to about 15 nm, as shown in FIGS. 2 a 1-2 a 3.
Advantageously, before forming the protective layer 10 an insulating layer 9 is formed, for example of silicon oxide of thickness L_Requal to about 15 nm that can be selectively etched with respect to the protective layer 10.
Advantageously, the formation of the insulating layer 9 and of the protective layer 10 is carried out through deposition.
On the whole memory electronic device 1 a second insulating layer 11 of the conformal type is formed that can be selectively etched with respect to the protective layer 10, for example of oxide of thickness equal to 60 nm, as shown in FIG. 3 a 1-3 a 3.
Advantageously, the thickness of this second insulating layer 11 is equal to the width L_HVof final spacers which will be formed in the first portion a1 of the device 1, reduced by the width L_LVof final spacers which will be formed in the second portion a2 of the device 1.
Advantageously, the formation of the second insulating layer 11 is carried out through deposition.
In the embodiments shown in the figures, the width A1 of the source region 8 a 31 of the memory cells 3 is smaller than the width A2 of the drain region 8 a 32 and of such thickness that the source region 8 a 31 of the cell 3 is completely filled in by the second insulating layer 11.
The process continues with the formation of a first mask 12 (non-critical, i.e., whose alignment to the underlying structures has good tolerances, and whose openings are dimensions greater then the obtainable photo-lithographic minimum) which shields the first portion of the memory electronic device 1 wherein the HV transistors 4 are integrated, as shown in FIGS. 4 a 1-4 a 3.
From the second and third portions of the memory electronic device 1 the second insulation layer 11 is then removed.
The removal step is for example carried out by an isotropic etching step selective with respect to the protective layer 10, as shown in FIGS. 4 a 2-4 a 3. In particular, due to the conformation of the source region 8 a 31 of the memory cell 3, the second insulating layer 11 is only partially removed from the source region 8 a 31.
Once the first mask 12 has been removed, a third conformal insulating layer 13 is then deposited, for example of thickness equal to about 50 nm, as shown in FIGS. 5 a 1-5 a 3.
Advantageously, the thickness of this third insulating layer 13 is equal to the width L_LVof final spacers which will be formed in the second portion a2 of the device 1, reduced by the width L_Cof final spacers which will be formed in the third portion a3 of the device 1.
Advantageously, this third conformal insulating layer 13 is formed by the same material as that of the second insulating layer 11.
The process continues with the formation of a second mask 14 (non-critical) which shields the first and the second portions of the memory electronic device 1, as shown in FIGS. 6 a 1-6 a 3.
From the third portion of the memory electronic device 1 the third conformal insulating layer 13 is then removed.
In particular, due to the conformation of the source region 8 a 31 of the memory cell 3, the third insulating layer 13 is only partially removed from the source region 8 a 31.
Advantageously, this latter removal step is for example carried out by an isotropic etching step selective with respect to the protective layer 10.
Once the second mask 14 has been removed, a fourth conformal insulating layer 15 is then formed, for example of thickness equal to about 20 nm, as shown in FIGS. 7 a 1-7 a 3.
Advantageously, the thickness of this fourth insulating layer 15 is equal to the width L_Cof final spacers which will be formed in the third portion a3 of the device 1, reduced by the thickness L_Nof the protective layer 10 and by the thickness L_Rof the first insulating layer 9 if present.
Advantageously, this fourth conformal insulating layer 15 is formed by the same material as the second and third conformal insulating layers 11, 13.
As shown in FIGS. 8 a 1-8 a 3, an etching step of the conformal insulating layers 11, 13 and 15 then follows until the protective layer 10 is exposed.
Advantageously, this latter etching step is of the anisotropic type.
In particular, this etching step is calibrated for removing the maximum thickness of the conformal insulating layers 11, 13 and 15 present on the semiconductor substrate 2, i.e., equal to about 130 nm in the first portion of the memory electronic device 1.
Advantageously, according to an embodiment of the invention this etching step, very selective with respect to the protective layer 10, since in the third portion of the memory electronic device 1 the fourth conformal insulating layer 15 is very thin, has for example a thickness equal to only 20 nm.
Advantageously, in the case in which layers 11, 13 and 15 of silicon oxide and a layer 10 of silicon nitride are used, the selectivity of this latter etching step should be greater than 7 to 1 for ensuring that the etching of the oxide layers 11, 13 and 15 does not break the nitride layer 10 in the third portion of the memory electronic device 1.
In the hypothesis in which the width of each single spacer is equal to the thickness of the insulating layers 11, 13 and 15, at the end of this etching the three desired spacers are formed; therefore, according to this embodiment of the invention, it is possible to choose the thickness of the three insulating layers 11, 13 and 15 for obtaining the spacers of the desired widths L_HV, L_LVand L_C.
The process of definition of the spacers ends with the anisotropic etching of the uncovered protective layer 10, which has served as a layer for stopping the etching of the insulating layers 11, 13 and 15, as shown in FIGS. 9 a 1-9 a 3.
Advantageously, the insulating thin layer 9 immediately in contact with the gate electrodes 7 a 1, 7 a 2 and 7 a 3 and the semiconductor substrate 2 of the active areas is instead left as protection for the implants of the junctions n+ and p+. The process then continues in a conventional way, with the possibility of forming salicide layers on the gate electrodes and on the junctions.
With reference to FIGS. 10 a 1 to 17 a 3, a process according to a second embodiment of the invention is described.
The process steps described with reference to the FIGS. 1 a 1-3 a 3 are the same as those of the process according to this second embodiment the invention and for this reason they will not be described again.
Elements being structurally and functionally identical to the process steps described with reference to FIGS. 1 a 1-9 a 3 will be given the same reference numbers.
As shown in FIGS. 10 a 1-10 a 3, a removal step of the second insulating layer 11 is then carried out until the protective layer 10 is exposed to form the first spacers 11 a.
Advantageously, this removal step is for example carried out by means of an anisotropic step. In particular, due to the conformation of the source region 8 a 31 of the memory cell 3, the second insulating layer 11 is only partially removed from the source region 8 a 31.
A first mask 12 a (non-critical) is then formed on the first portion of the memory electronic device 1 wherein the HV transistors 4 are integrated.
From the second and third portions of the memory electronic device 1 the first spacers 11 a are then removed, as shown in FIGS. 11 a 2-11 a 3.
Advantageously, the removal step is carried out by means of an isotropic etching step selective with respect to the protective layer 10. In particular, due to the conformation of the source region 8 a 31 of the memory cell 3, the second insulating layer 11 is only partially removed from the source region 8 a 31.
Once the first mask 12 a has been removed, a third conformal insulating layer 13 is then formed, for example of thickness equal to about 50 nm, as shown in FIGS. 12 a 1-12 a 3.
Advantageously, the thickness of this third insulating layer 13 is equal to the width L_LVof final spacers which will be formed in the second portion a2 of the device 1, reduced by the width L_Cof final spacers which will be formed in the third portion a3 of the device 1.
Advantageously, this third conformal insulating layer 13 is formed by the same material as the second conformal insulating layer 11.
As shown in FIGS. 13 a 1-13 a 3, a removal step of the third insulating layer 13 is then carried out until the protective layer 10 is exposed to form second spacers 13 a.
In particular, in the first portion of the memory device 1 these second spacers 13 a are placed side by side to the first spacers 11 a to form spacers of width L_INequal to L_HV−L_C.
Advantageously, this removal step is for example carried out by means of an anisotropic etching step. In particular, due to the conformation of the source region 8 a 31 of the memory cell 3, the third insulating layer 13 is only partially removed from the source region 8 a 31.
The process continues with the formation of a second mask 14 a (non-critical) which shields the first and the second portions of the memory electronic device 1.
From the third portion of the memory electronic device 1 the second spacers 13 a are then removed, as shown in FIGS. 14 a 1-14 a 3.
In particular, due to the conformation of the source region 8 a 31 of the memory cell 3, the third insulating layer 13 is only partially removed from the source region 8 a 31.
The removal step is for example carried out by means of an an isotropic etching step selective with respect to the protective layer 10.
Once the mask 14 a has been removed, a fourth conformal insulating layer 15 is then formed, for example with thickness equal to about 20 nm, as shown in FIGS. 15 a 1-15 a 3.
Advantageously, the thickness of this fourth insulating layer 15 is equal to the width Lc of final spacers which will be formed in the third portion a3 of the device 1, reduced by the thickness of the protective layer 10 and by the first insulating layer 9 of present.
Advantageously, this fourth conformal insulating layer 15 is formed by the same material of the second and third conformal insulating layer 11, 13.
As shown in FIGS. 16 a 1-16 a 3, a removal step of the fourth insulating layer 13 is then carried out until the protective layer 10 is exposed to form third spacers 15 a.
Advantageously, this removal step is for example carried out by means of an anisotropic etching step. In particular, due to the conformation of the source region 8 a 31 of the memory cell 3, the fourth insulating layer 15 is only partially removed from the source region 8 a 31.
In particular, in the first portion of the memory device 1 these third spacers 15 a are placed side by side to the second spacers 13 a to form spacers of width L_HV, in the second portion of the memory device 1 these third spacers 15 a are placed side by side to the second spacers 13 a to form spacers of width L_LV, while in the third portion spacers of width L_Cremain defined.
As shown in FIGS. 17 a 1-17 a 3, the definition process of the spacers ends with an etching step, for example anisotropic, of the protective layer 10 not covered by the spacers, which has served as layer to stop the etching of the spacers.
Although the process according to embodiments of the invention has been described with reference to the formation of three groups of spacers of different dimensions, it can be advantageously applied to N differential spacers of final growing width L1, L2 . . . , LN in N separated regions A1, A2 . . . , AN.
The process according to this further embodiment of the invention for forming a memory device 1 on a substrate 2 comprises the steps of:
forming the gate electrodes of the matrix of memory cells and of the associated circuitry,
forming the source/drain regions of the cells and first “low doped drain” portions of the source/drain regions of the transistors of the circuitry. according to this further embodiment of the invention, the process provides the steps of:
1. formation of a first conformal insulating thin layer 9, for example of silicon oxide, of a first thickness X1. This layer could also not be present,
2. formation of a protective conformal thin layer 10, for example of silicon nitride, of a second thickness X2,
3. formation of a second conformal insulating layer 11, for example of oxide, of a third thickness SN equal to LN-LN−1,

- 3.1 formation of a first mask 12 which covers the regions AN wherein spacers of width SN are provided,
- 3.2 removal, for example with wet etching, of the second insulating layer 11 not covered by the first mask 12; advantageously, the wet etching serves to ensure a very high selectivity on the protective layer,
- 3.3 removal of the first mask 12,

4. formation of a third conformal insulating layer 13, for example of silicon oxide, of a fourth thickness SN−1 equal to LN−1−LN−2,

- 4.1 formation of a second mask 14 which covers the regions AN and AN−1 wherein spacers of width SN and SN−1 are provided,
- 4.2 removal, for example with wet etching, of the third insulating layer 13 not covered by the second mask 14; advantageously, the wet etching serves to ensure a very high selectivity on the protective layer 10,
- 4.3 removal of the second mask 14,

5 . . . . repetition of the operations of deposition, masking and removal of the insulating layers not covered by the masks until a sole region A1 of the device, wherein the thinner spacers are to be formed, is not coated by a insulating layer,
6. then forming a last insulating layer 15 of thickness S1=L1−X1−X2, if the layer 9 is present, in such a way as to obtain that the different regions A1, A2 . . . , AN are effectively covered by dielectric layers of overall thickness equal to L1, L2 . . . , LN,
7. single etching of the insulating layers for example of the anisotropic type on the whole memory device 1 for forming the spacers; the etching must be calibrated for etching the maximum thickness of the insulating layers overlapped onto each other LN−X1−X2, if the layer 9 is present, with such selectivity with respect to the protective layer 10 as to allow an overetch equal to at least the difference LN−L1 of thickness of the insulating layers being present,
8. etching of the protective layer 10, for example anisotropic, for removing the protective layer 10 not covered by the spacers (selective etching with respect to the underlying insulating layer 9).
At the end of these steps N different spacers of width L1, L2 . . . , LN are formed, in the hypothesis that the width of the spacer is, in each case, equal to the thickness of the insulating layers covering the different regions. In any case, the process can be carried out also in the case in which the width of the spacers is not equal to the thickness of the insulating layers to be etched. In this case each single formation of these layers will be calibrated so as to obtain, after the etching, the desired dimensions. All the spacers thus formed share a common structure: a thin oxide layer, if present, covered by a thin protective layer, for example of nitrate, and by a last insulating layer of variable dimension, for example of oxide. The cost of this process is equal to N−1 specific, non-critical masks.
Also the process according to the second embodiment of the invention can be used for obtaining a plurality of spacers of different growing widths equal to L1, L2 . . . , LN. In this embodiment, after the formation of the gate electrodes of the circuitry and of the first weakly doped portions of the transistors of the circuitry, the process provides the steps of:
1. formation of a first insulating conformal thin layer 9 for example of silicon oxide of a first thickness X1. However, this layer could also not be present,
2. formation of a protection conformal thin layer 10, for example of silicon nitride of a second thickness X2,
3. formation of a second conformal insulating layer 11 for example of oxide of third thickness SN=LN−LN−1

- 3.1 etching of the second conformal insulating layer 11 until the protective layer 10 is uncovered for forming first spacers 11 a of width SN on the side walls of the gate electrodes. Advantageously, the etching step is of the anisotropic type and is calibrated for removing the second conformal insulating layer 11 of thickness SN. In particular this etching step is selective with respect to the protective layer 10.
- 3.2 forming a first mask 12 a which covers the regions AN wherein spacer of width SN are present,
- 3.3 removal of the first spacers 11 a for example with wet etching for ensuring a very high selectivity of this etching step with respect to the protective layer 10,
- 3.4 removal of the first mask 12 a,

4. formation of a third insulating conformal layer 13, for example of oxide of a fourth thickness SN−1=LN−1−LN−2

- 4.1 etching of the third insulating conformal layer 13 of thickness SN−1 for example of the anisotropic type, for forming further spacers of width SN−1+SN in the region AN and of width SN−1 on the whole remaining surface of the device 1. In particular, the etching step is selective with respect to the protective layer 10.
- 4.2 formation of a second mask 14 a which covers the regions AN and AN−1 wherein spacers of width SN−1+SN and SN−1 are provided,
- 4.3 removal of the spacers of width SN−1, for example with wet etching for ensuring a very high selectivity of this etching step with respect to the protective layer 10,
- 4.4 removal of the second mask 14 a,

5 . . . . repetition of the operations of deposition, anisotropic etching, masking and removal operations of the insulating layers until a sole region A1 of the device, wherein the spacers are to be formed, is provided with spacer,
6. deposition of the last conformal insulating layer 15 of thickness S1=L1−X1−X2, if the layer 9 is present, so as to obtain that the different regions A1, A2 . . . , AN effectively have differential spacers of dimensions equal to L1, L2 . . . , LN,
7. etching of the protective layer 10, for example anisotropic, for removing the protective layer 10 not covered by the spacers (selective etching with respect to the underlying insulating layer 9).
With this alternative sequence a plurality of spacers with different lengths is obtained, as in the process according to the first embodiment of the invention (with possible re-calibration of the thickness of the layers deposited with respect to the dimensions of the spacers, in the case in which the dimension of the spacer does not correspond to the thickness of the insulating layers to be etched) by substituting a succession of anisotropic etchings for the single final anisotropic etching, with the same cost in terms of masks.
The choice between the two schemes depends on the selectivity on the protective layer (for example nitride) the etching steps (isotropic and anisotropic) of the insulating layers (for example of oxide) succeed in ensuring and on the overall morphology of the spacers, which is function also of the height of the gate electrodes in circuitry and in matrix.
The process according to the embodiments of the invention can be applied to any electronic device and in particular can be especially advantageous if the electronic device comprises a matrix of memory cells of the EPROM and Flash EEPROM type with NOR or NAND organization, with single level and greater multilevel region, for which the formation of differential spacers can be an essential passage for integrating the memory cells with the different types of transistors present in the circuitry for handling the high voltages and in the possible high performance circuitry.
Therefore, although the process has been described with reference to the integration of high density floating gate memories with LV and HV transistors, its application can be extended to any process which provides the use of at least two groups of MOS transistors for which it is necessary a differentiation of the spacers.
In particular, according to an embodiment of the invention the spacers are formed especially by oxide layers and are thus particularly compatible with the demands for scalability of the memory matrixes also allowing to minimize the overall dielectric constant of the dielectric layers which separate the cells of the memory matrix, so as to reduce the capacitive couplings between the floating gate electrodes which are a source of disturbances during the reading step of the cell.
Although preferred embodiments of the process of the present invention have been illustrated in the accompanying Drawings and described in the foregoing Detailed Description, it will be understood that the invention is not limited to the embodiments disclosed, but is capable of numerous rearrangements, modifications and substitutions without departing from the spirit of the invention as set forth and defined by the following claims

Claims

1. A process, comprising:

forming a first portion of an electronic device integrated on a semiconductor substrate, wherein forming the first portion includes forming first transistors each comprising a gate electrode projecting from the semiconductor substrate and respective source/drain regions;

forming a second portion of the electronic device by steps including forming second transistors each comprising a gate electrode projecting from the semiconductor substrate and respective source/drain regions;

forming in cascade a first protective layer and a first conformal insulating layer of a first thickness on the first and second portions;

forming a first mask covering the first portion;

removing first portions of the first conformal insulating layer not covered by the first mask;

removing the first mask;

forming a second conformal insulating layer of a second thickness on the first and second portions; and

forming first spacers of a first width on side walls of the gate electrodes of the first portion and second spacers of a second width on side walls of the gate electrodes of the second portion by removing the second portions of the first conformal insulating layer and portions of the second conformal insulating layer until the protective layer is exposed.

2. The process of claim 1 forming a further conformal insulating layer on the first and second portions before forming the first conformal insulating layer.

3. The process of claim 2, wherein the further conformal insulating layer is of a thickness equal to about 15 nm.

4. The process of claim 2, wherein the further conformal insulating layer is formed by an oxide layer.

5. The process of claim 1, wherein the conformal insulating layers are formed by oxide layers and the protective layer is formed by a nitride layer.

6. The process of claim 1, wherein the first thickness of the first conformal insulating layer is equal to about 60 nm, the second thickness of the second conformal insulating layer is equal to about 20 nm, and the protective layer is of a thickness equal to about 15 nm.

7. The process of claim 1, wherein forming the first and second spacers includes anisotropically removing the second portions of the first conformal insulating layer and the portions of the second conformal insulating layer; and removing the first portions of the first conformal insulating layer includes isotropically removing the first portions of the first conformal insulating layer.

8. The process of claim 1, wherein the second transistors are floating gate transistors which form non-volatile memory cells.

9. A process, comprising:

forming first spacers on side walls of the gate electrodes by removing portions of the first conformal insulating layer until the protective layer is exposed to form;

forming a first mask covering the first portion;

removing the first spacers of the second portion while the first mask protects the first portion;

removing the first mask;

forming second spacers adjacent to the first spacers of the first portion and on the side walls of the gate electrodes of the second portion by removing portions of the second conformal insulating layer until the protective layer is exposed.

10. The process of claim 9, further comprising forming a further conformal insulating layer on the first and second portions before forming the first conformal insulating layer.

11. The process of claim 10, wherein the further conformal insulating layer is of a thickness equal to about 15 nm.

12. The process of claim 10, wherein the further conformal insulating layer is formed by an oxide layer.

13. The process of claim 10, wherein the first thickness of the first conformal insulating layer is equal to about 60 nm, the second thickness of the second conformal insulating layer is about 50 nm, the further conformal insulating layer is of a thickness equal to about 20 nm, and the protective layer is of a thickness equal to about 15 nm.

14. The process of claim 9, wherein the conformal insulating layers are formed by oxide layers and the protective layer is formed by a nitride layer.

15. The process of claim 9, wherein the second transistors are floating gate transistors which form a non-volatile memory cells.

16. The process of claim 9, wherein the steps of removing the portions of the conformal insulating layers for forming the spacers are performed anisotropically, and the step of removing the spacers is performed isotropically.

17. A process, comprising:

forming a plurality of portions of an electronic device integrated on a semiconductor substrate wherein forming the plurality of portions includes forming respective transistors, each comprising a gate electrode projecting from the semiconductor substrate, and respective source/drain regions;

forming in cascade a protective layer and a first conformal insulating layer on the plurality of portions;

forming a first mask covering a first portion of the plurality;

removing portions of the first conformal insulating layer not covered by the first mask;

removing the first mask;

forming a second conformal insulating layer on the plurality of portions;

forming a second mask covering the first portion and a second portion of the plurality;

removing portions of the second conformal insulating layer not covered by the second mask;

removing the second mask;

forming a third conformal insulating layer on the plurality of portions; and

forming a plurality of spacers on respective side walls of the gate electrodes of the plurality of portions by removing the insulating layers until the protective layer is exposed.

18. The process of claim 17, further comprising forming a further conformal insulating layer on the plurality of portions before forming the first conformal insulating layer.

19. The process of claim 18, wherein the further conformal insulating layer is formed by an oxide layer.

20. The process of claim 17, wherein the conformal insulating layers are formed by oxide layers and the protective layer is formed by a nitride layer.

21. The process of claim 17, wherein removing the insulating layers until the protective layer is exposed is performed anisotropically, and the steps of removing portions of the conformal insulating layers not covered by the masks are performed isotropically.

22. The process of claim 17, wherein the transistors of a third portion of the plurality are floating gate transistors forming non-volatile memory cells.

23. A process, comprising:

forming a plurality of portions of an electronic device integrated on a semiconductor substrate, wherein forming the plurality of portions includes forming respective transistors each comprising a gate electrode projecting from the semiconductor substrate and respective source/drain regions;

forming first spacers on side walls of the gate electrodes by removing the first conformal insulating layer until the protective layer is exposed;

forming a first mask covering a first portion of the plurality;

removing the spacers in second and third portions of the plurality while the first mask covers the first portion;

removing the first mask;

forming a second conformal insulating layer on the plurality of portions;

forming second spacers on the first spacers of the first portion and on the side walls of the gate electrodes of the second and third portions by removing the second conformal insulating layer until the protective layer is exposed;

forming a second mask covering the first and second portions

removing the second spacers from the third portion while the second mask covers the first and second portions;

removing the second mask;

forming a third conformal insulating layer on the plurality of portions; and

forming third spacers adjacent to the second spacers in the first and second portions and on the side walls of the gate electrodes of the third portion by removing the third conformal insulating layer until the protective layer is exposed.

24. The process of claim 23, further comprising forming a further conformal insulating layer on the first, second, and third portions before forming the first conformal insulating layer.

25. The process of claim 24, wherein the further conformal insulating layer is formed by an oxide layer.

26. The process of claim 23, wherein the conformal insulating layers are formed by oxide layers and the protective layer is formed by a nitride layer.

27. The process according to claim 23, wherein the transistors of the third portion are floating gate transistors which form non-volatile memory cells.

28. The process according to claim 23, wherein the steps of removing the conformal insulating layers for forming the spacers are performing anisotropically, and the steps of removing the spacers are performed isotropically.