US20080014697A1

US20080014697A1 - Semiconductor device with dram cell and method of manufacturing the same

Info

Publication number: US20080014697A1
Application number: US11/778,322
Authority: US
Inventors: Takeo Furuhata; Takahito Nakajima
Original assignee: Toshiba Corp
Current assignee: Toshiba Corp
Priority date: 2004-09-28
Filing date: 2007-07-16
Publication date: 2008-01-17
Also published as: JP2006100382A; US20060068544A1; US7265020B2

Abstract

A semiconductor device including a semiconductor substrate a trench forming in the substrate, an insulating film forming on an inner surface of the trench so as to be rendered thicker from a substrate surface side thereof toward a trench deep side thereof, and an electrode layer forming inside the insulating film forming inside the trench so as to extend from a trench deep part side toward the surface side of the substrate. The substrate surface side of the insulating film functions as a collar insulating film retaining an insulation performance between the electrode layer and the semiconductor substrate, and the trench deep side of the insulating film functions as a capacitor insulating film composing a capacitor of a DRAM cell.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No. 11/235,210, filed Sep. 27, 2005, and is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2004-281936, filed on Sep. 28, 2004, the entire contents of each of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the invention
The present invention relates to a semiconductor device provided with a DRAM cell having a trench capacitor and a method of manufacturing the semiconductor device.
2. Description of the related art
A dynamic random access memory (DRAM) cell provided with a trench capacitor comprises a semiconductor substrate formed with a deep trench and a capacitor formed in a deep inside of the trench. Regarding the capacitor, a capacitor insulating film is formed on a deep inside surface of the trench. A first electrode layer is buried inside the capacitor insulating film, whereby the capacitor is fabricated. Furthermore, a second electrode layer is formed on the first electrode layer. A collar insulating film is formed in order to retain an insulation performance between the semiconductor substrate and the first and second electrode layers buried inside the trench.
JP-A-2003-60079 discloses a capacitor manufacturing method. In the disclosed method, a capacitor insulating film, collar insulating film and electrode layer are formed in a trench as follows. Firstly, a deep trench (corresponding to a trench) is formed in a substrate (corresponding to a semiconductor substrate). Subsequent to several steps, a capacitor dielectric layer (corresponding to a capacitor insulating film) is formed on an inner surface of the deep trench. A conductive layer (corresponding to an electrode layer) is formed so as to fill the deep trench. At this time, a gap occurs in the conductive layer. Subsequently, a part of the conductive layer corresponding to an upper portion of the deep trench is removed while a part of the conductive layer corresponding to a bottom of the deep trench.
Furthermore, a colored oxidation layer (corresponding to a collar insulating film) is formed and a colored liner layer made of a material differing from the colored oxidation layer is also formed. A part corresponding to the upper conductive layer is removed. In this case, an oxide is present in the gap. Accordingly, when the conductive layer is formed on the gap, there is a possibility that electric connection cannot be obtained. In view of the possibility, the colored oxidation layer of a part corresponding to the gap is removed.
In the manufacturing method of JP-A-2003-60079, the capacitor dielectric layer is formed as the capacitor insulating film, and the colored oxidation layer and colored liner layer are formed as the collar insulating film. Generally, in the DRAM cell with a trench capacitor, a collar insulating film is formed so as to be thinner than a capacitor insulating film so that an insulating performance is retained between a storage electrode and the semiconductor substrate. The capacitor insulating film needs to be formed to be thinner than the collar insulating film in order that a capacity of the trench capacitor may be increased. As a result, the method disclosed in JP-A-2003-60079 needs to be applied. However, the above-noted manufacturing method results in much trouble and cost increase.

BRIEF SUMMARY OF THE INVENTION

Therefore, an object of the present invention is to provide a semiconductor device in which a manufacturing process can be simplified and a method of fabricating the semiconductor device.
The present invention provides a method of manufacturing a semiconductor device, including forming a trench in a semiconductor substrate, forming a plate diffusion layer in a part of the semiconductor substrate adjacent to the trench, isotropically forming a first insulating film on an entire inside surface of the trench, the first insulating film including a lower portion functioning as a capacitor insulating film, forming a second insulating film on an upper portion of the first insulating film by a plasma oxidation so that a thickness of the second insulating film is decreased gradually toward a bottom of the trench after forming the first insulating film, and forming an electrode layer inside the first-and second insulating films so that the electrode layer is structurally connected to the first and second insulating films.

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects, features and advantages of the present invention will become clear upon reviewing the following description of the embodiment with reference to the accompanying drawings, in which:
FIG. 1 is a schematic sectional view of a semiconductor device manufactured by a manufacturing method of one embodiment in accordance with the present invention, which view being taken along line 1-1 in FIG. 2;
FIG. 2 is a schematic plan view of the semiconductor device;
FIG. 3 illustrates a first step of a process of manufacturing a memory cell;
FIG. 4 illustrates a second step of the memory cell manufacturing process
FIG. 5 illustrates a third step of the memory cell manufacturing process;
FIG. 6 illustrates a fourth step of the memory cell manufacturing process;
FIG. 7 illustrates a fifth step of the memory cell manufacturing process;
FIG. 8 illustrates a sixth step of the memory cell manufacturing process;
FIG. 9 is a graph showing the relationship between aspect ration and an oxide film thickness;
FIG. 10 illustrates an eighth step of the memory cell manufacturing process;
FIG. 11 illustrates a ninth step of the memory cell manufacturing process;
FIG. 12 illustrates a tenth step of the memory cell manufacturing process;
FIG. 13 illustrates an eleventh step of the memory cell manufacturing process;
FIG. 14 illustrates a twelfth step of the memory cell manufacturing process;
FIG. 15 illustrates a thirteenth step of the memory cell manufacturing process;
FIG. 16 illustrates a fourteenth step of the memory cell manufacturing process; and
FIG. 17 illustrates a fifteenth step of the memory cell manufacturing process.

DETAILED DESCRIPTION OF THE INVENTION

One embodiment of the present invention will be described with reference to the accompanying drawings. The invention is applied to a DRAM semiconductor storage device provided with a DRAM cell (memory cell) of the trench capacitor type in the embodiment. FIG. 2 is a schematic plan view of a memory cell region of the DRAM semiconductor storage device. FIG. 1 is a schematic sectional view taken along line 1-1 in FIG. 2. In the embodiment, a memory cell 3 is formed on a p-type silicon semiconductor substrate (corresponding to a semiconductor substrate). However, the memory cell 3 may be formed in a p-well region, instead.
<Structure>
Referring to FIG. 2, a DRAM semiconductor storage device 2 as a semiconductor device includes a memory cell region M in which a number of memory cells 3 are arranged on the silicon semiconductor substrate 1. The memory cells 3 are arranged to be paired and opposed to each other in a linear symmetry with respect to a bit line BL (shown in FIG. 1). The memory cells 3 are arranged so that the paired memory cells 3 have a highest degree of integration. An active area AA designates a region including a source/drain diffusion layer of a transistor Tr and a channel region.
Deep trenches 4 (grooves) are provided in a zigzag pattern in the memory cell region M. Each trench 4 is formed into an elliptic shape. Each memory cell 3 comprises a trench capacitor C and a metal oxide semiconductor (MOS) cell transistor Tr as shown in FIG. 1. The trench capacitor C is formed so as to be located at a deep part 4 a side of each trench 4. A plate diffusion layer 5 is formed outside the trench 4 so as to be located at the deep part 4 a side as shown in FIG. 1. The plate diffusion layer 5 functions as a plate electrode of the trench capacitor C. An insulating film 6 is formed on an inner peripheral face including the deep part 4 a side of each trench 4.
A first electrode layer 7 is buried inside the inner peripheral face of each trench 4 and the insulating film 6. The first electrode layer 7 is made from polycrystalline silicon doped with impurities, amorphous silicon doped with impurities or the like. The first electrode layer 7 serves as the other plate electrode (storage node) of the trench capacitor C. A second electrode layer 8 is buried over the first electrode layer 7 in the trench 4 so as to be in contact with a side of the trench 4. The second electrode layer 7 is also made of polycrystalline silicon doped with impurities, amorphous silicon doped with impurities or the like.
The insulating film 6 is made of a silicon nitrided oxide film (SiN—SiO₂film), Al₂O₃—SiO₂film, HfO₂—SiO₂film or the like. The insulating film 6 is formed so that a thickness thereof is gradually reduced from the surface 1 a side of the substrate 1 toward a deep part 4 a side of the trench 4. In other words, the insulating film 6 is formed so that the thickness thereof is gradually increased from the deep part 4 a side of the trench 4 toward the surface 1 a side of the substrate 1. The insulating film 6 has a tapered section and includes a part with a predetermined range of height relative to the deep part 4 a of the trench 4 (for example, a range from 5 to 10 μm, namely, a region as shown by reference symbol L1 in FIG. 1). This part of the insulating film 6 is isotropically formed so as to have a constant film thickness (4 nm, for example) and referred to as “first forming section 6 a.” The first forming section 6 a serves as a capacitor insulating film for separation of both plate electrodes of the trench capacitor C.
The insulating film 6 is further formed so as to be located over the first forming section 6 a. The part located over the first forming section 6 a is referred to as “second forming section 6 b.” The second forming section 6 b is formed so as to have a larger thickness than the first forming section 6 a. The reason for this is that the first forming section 6 a is formed in order to increase a capacity of the trench capacitor C, whereas the second forming section 6 b is formed in order to retain the insulation performance between the first and second electrode layers 7 and 8 buried in the trench 4 and the silicon substrate 1. The second forming section 6 b is formed so that a thickness thereof is gradually increased from the lower side toward the upper side. The second forming section 6 b includes a part which is located on the inner peripheral surface of the trench 4 and has a thickness ranging from 30 to 40 nm, for example.
A shallow trench isolation (STI) structure is provided over the first and second electrode layers 7 and 8 so as to serve as an element isolation region. As shown in FIG. 1, STI is opposed to the cell transistor Tr relative to the trench 4. An insulating film buried in STI is adapted to electrically separate each trench capacitor C from the adjacent trench capacitors. STI further electrically separates each trench capacitor C from a word line WL passing over STI. The second electrode 8 is formed over the first electrode 7 in the trench 4 as described above. Thus, the trench capacitor C comprises the first and second electrodes 7 and 8, the plate diffusion layer 5 and the insulating film 6.
The cell transistor Tr is adjacent to the trench capacitor C so as to electrically be connected to the latter as shown in FIG. 1. A strap 9 is formed on a contact boundary between the cell transistor Tr and the second electrode layer 8 buried inside the trench 4. The strap 9 is formed on an upper part of outer periphery of the trench 4 at the cell transistor Tr side by diffusing donor-type impurities outward from the second electrode layer 8. The cell transistor Tr comprises a gate electrode 10 functioning as a word line WL, n-type diffusion layers 11 and 12 (source/drain diffusion layers) and a gate oxide film 13 (gate insulating film). The gate oxide film 13 is formed on the silicon substrate 1. The gate electrode 10 comprises a polycrystalline silicon layer 10 a doped with impurities and formed on the gate oxide film 13 and a metal silicide layer 10 b formed on the layer 10 a. The diffusion layers 11 and 12 are formed on the surface layer side of the silicon substrate so as to be located at both ends of the gate electrode 10 respectively.
The second electrode layer 8 constituting the trench capacitor C is mechanically in contact with and electrically connected to the diffusion layer 12. A contact plug 14 is mechanically in contact with and electrically connected to the other diffusion layer 11. The contact plug 14 is provided for electrically connecting the diffusion layer 11 to the bit line BL. Furthermore, an insulating film 15 is formed around the gate electrode 10 so as to cover the gate electrode 10. An interlayer insulating film 16 is formed between the bit line BL and the memory cell 3 to electrically separate the bit line BL and the memory cell 3 from each other.
According to the above-described structure, the insulating film 6 includes the first formation section 6 a formed on the inner peripheral surface of the trench 4 at the inner deep portion 4 a side so that the section 6 a has a uniform film thickness. The insulating film 6 further includes the second formation section 6 b formed so that the thickness of the section 6 b is gradually increased from the predetermined location between the surface 1 a of the silicon substrate 1 and the deep portion 4 a of the trench 4 toward the surface 1 a side of the silicon substrate 1. Accordingly, the insulating film 6 is formed so that the film thickness thereof is gradually increased from the deep portion 4 a of the trench 4 toward the surface 1 a side of the silicon substrate 1. The first formation section 6 a functions as the capacitor insulating film of the trench capacitor C, whereas the second formation section 6 b functions as a collar insulating film.
In the foregoing embodiment, the second formation section 6 b serving as the collar insulating film is formed into a tapered shape so that a cross-sectional area of the electrode layer is increased from the second electrode layer 8 toward the first electrode layer 7 at the side of the lower portion of the collar insulating film. As a result, the resistance of the electrode layer can be rendered lower and accordingly, the operating speed can be improved. Furthermore, since an upper portion of the collar insulating film is tapered, a path through which impurities in the first electrode layer 7 leaks to an upper portion can be narrowed. As a result, an amount of impurities entering into the silicon substrate 1 side through the second electrode layer 8 can be limited. Consequently, variations in the threshold value of the transistor can be limited, whereupon a memory cell with higher reliability can be formed. Furthermore, since the second formation section 6 b serving as the collar insulating film is tapered, an upper part of the collar insulating film is formed on the sidewall of the trench 4 so as to have a larger thickness. Consequently, since impurities in the electrode layers 7 and 8 are prevented from entering through the collar insulating film into the silicon substrate 1, variations in the threshold value of the cell transistor Tr can be limited, whereupon a memory cell with higher reliability can be formed. Additionally, since the second formation section 6 b serving as the collar insulating film contains nitrogen (N) atoms, the collar insulating film can be prevented from heat deterioration, whereby the insulating performance can be improved between the first electrode layer 7 a and the silicon substrate 1.
<Manufacturing Method>
The method of manufacturing the thus configured trench DRAM semiconductor storage device will now be described with reference to FIGS. 3 to 17. FIGS. 3 to 8 and 10 to 17 are schematic sectional views showing a series of steps of the method of manufacturing the device. Even if the invention can be realized, an order of steps described below can be changed at need. One or a plurality of general steps may be added and one or a plurality of the steps described below may be eliminated.
Firstly, the silicon oxide film 17 is formed on the silicon substrate 1 and the silicon nitride film 18 is deposited on the silicon oxide film 17, as shown in FIG. 3. Subsequently, a boron silicate glass (BSG) film 19 is deposited on the silicon nitride film 18. A tetraethyl orthosilicate (TEOS) film 20 serving as a hard mask is further deposited on the BSG film 19.
Photoresist (not shown) for forming a deep trench is applied to the TEOS film 20 and then patterned by the photolithography technique as shown in FIG. 4. The silicon oxide film 17, the silicon nitride film 18, the BSG film 19 and the TEOS film 20 are etched by an anisotropic etching process, so that the trench 4 is formed. Thereafter, the resist pattern is removed by ashing.
Subsequently, as shown in FIG. 5, an anisotropic etching (reactive ion etching (RIE)) is carried out with the BSG and TEOS films 19 and 20 serving as masks so that the silicon substrate 1 is etched until a predetermined depth is reached, whereby the deep trench 4 is formed.
After removal of the BSG film 19, arsenic is diffused from inside the trench 4 over the silicon substrate 1 until a predetermined level (depth) is reached from the deep portion 4 a of the trench 4, whereby the plate diffusion layer 5 of the trench capacitor C is formed outside the trench 4, as shown in FIG. 6. Subsequently, the trench surface insulating film 21 is isotropically formed on the inner surface of the trench 4 as shown in FIG. 7. The trench surface insulating film 21 is made from SiN—SiO₂film, Al₂O₃—SiO₂film, HfO₂—SiO₂film or the like. In this case, it is desirable that the trench surface insulating film 21 should contain nitrogen atom. Subsequently, as shown in FIG. 8, a surface layer side insulating film 22 is formed on an upper part of the inner wall of the trench 4 by plasma oxidation (radical oxidation). The conditions for the plasma oxidation are as follows: under the conditions of pressure of 1 Torr, H₂/O₂/Ar=10/10/1000 in sccm and temperature of 600° C., the plasma oxidation is carried out at 3.5 kW using an electromagnetic wave transmitter whose frequency is 2.45 GHz. The unit sccm is an abbreviation of standard cubic centimeter per minute and a unit of flow rate. Although the temperature is set at 600° C. in the embodiment, the surface layer side insulating film 22 with a desired film thickness can be formed by the plasma oxidation when the temperature ranges from 250° C. to 600° C.
Furthermore, although the plasma oxidation uses a gas with a mixing ratio of H₂/O₂/Ar adjusted as described above in the embodiment, a 100%-O₂gas may be used for the plasma oxidation. Additionally, although the plasma oxidation is carried out in the embodiment, plasma nitriding or combination of plasma oxidation and plasma nitriding may be carried out, instead.
FIG. 9 shows aspect ratio dependency of the film thickness of a film formed by oxidation when plasma oxidation is carried out for the interior of the trench 4 using the aforesaid two types of gases. As obvious from FIG. 9, whichever gas is used, the film thickness of a film formed by oxidation becomes smaller as an aspect ratio is increased. More specifically, the film thickness of the film formed at a deep location in the trench 4 is smaller than the film thickness of the film formed at a shallow location in the trench 4. Accordingly, the silicon oxide film can be formed from the surface 1 a side of the silicon substrate 1 to the deep portion 4 a of the trench 4 so as to be continuously thin along the inner surface of the trench.
The aspect ratio dependency of the film thickness of a film formed by oxidation becomes higher when a gas with a mixing ratio of H₂/O₂/Ar is used for plasma oxidation than when a 100%-O₂gas is used for the plasma oxidation. More specifically, the following results were achieved from an experiment conducted by the inventors. When an oxide film is formed using an H₂/O₂/Ar gas, the oxide film has a film thickness of 155 Å at a depth of the trench 4 corresponding to the aspect ratio of 0.1. The oxide film has a film thickness of 80 Å at a depth of the trench 4 corresponding to the aspect ratio of 2. Furthermore, the oxide film has a film thickness of 50 Å at a depth of the trench 4 corresponding to the aspect ratio of 4. See characteristic A in FIG. 9.
On the other hand, when a 100%-O₂gas is used for the plasma oxidation, the oxide film has a film thickness of 155 Å at a depth of the trench 4 corresponding to the aspect ratio of 0.1. The oxide film has a film thickness of 150 Å at a depth of the trench 4 corresponding to the aspect ratio of 2. Furthermore, the oxide film has a film thickness of 145 Å at a depth of the trench 4 corresponding to the aspect ratio of 4. See characteristic B in FIG. 9.
Accordingly, the depth of the trench 4 and the conditions for oxidation are adjusted so that the surface layer side insulating film 22 can be formed so as to be thicker in a portion thereof from the deep portion 4 a side of the trench 4 toward the surface 1 a side of the silicon substrate 1, as shown in FIG. 8. Furthermore, the film thickness can be controlled. In this forming step in the embodiment, the surface layer side insulating film 22 is formed so that the film thickness thereof becomes zero at a middle location in the trench 4 in the direction of depth of the trench 4. See a lowermost portion 22 a of the surface layer side insulating film 22 in FIG. 8. When the surface layer side insulating film 22 is formed by the aforesaid manufacturing method, crystalline anisotropy is reduced in the boundary between the insulating film 6 and the silicon substrate 1. More specifically, since the insulating film 6 and the silicon substrate 1 are brought into a planate contact with each other, electric current leakage due to local concentration of electric field can be reduced, and the memory cell 3 having an improved reliability can be formed.
Subsequently, as shown in FIG. 10, a first polycrystalline silicon layer 23 doped with donor impurities is buried inside the trench surface insulating film 21 and surface side insulating film 22 so as to fill the interior of the trench 4 from the deep portion 4 a to the surface 1 a side of the silicon substrate 1. Subsequently, as shown in FIG. 11, the first polycrystalline silicon layer 23 is etched back by the RIE process until a predetermined level is reached, whereby the first electrode layer 7 is formed. In this case, the etchback is carried out so that the level below the surface 1 a of the substrate 1 and above the lowermost portion 22 a of the insulating film 22 is reached, whereupon a portion serving as the first electrode layer 7 is formed. In other words, the surface layer side insulating film 22 is formed so as to be in contact with an upper side 7 a of the electrode layer 7 upon completion of the step as shown in FIG. 11.
Subsequently, as shown in FIG. 12, the insulating film 22 formed on the sidewall of the first electrode layer 7 is removed by an isotropic etching process under an etching condition with selectivity for the first electrode layer 7. Since a part of the insulating film 22 at the surface 1 a side is removed in FIG. 12, the remainder of the insulating film 22 is designated by reference symbol “6 b” which indicates the collar insulating film. In this case, the insulating film 22 formed so as to be in contact with the upper side 7 a of the first electrode layer 7 is removed. More specifically, as shown in FIG. 12, the insulating film 22 is removed so that the level below an upper surface of the first electrode layer 7 and above the lowermost portion 22 a of the insulating film 22 is reached, whereupon a portion serving as the first electrode layer 7 is formed. As a result, the portion serving as the collar insulating film is formed as shown in FIGS. 12 and 13. Next, ions of for example, Ge and the like are implanted from above the trench 4 for the purpose of adjustment of a threshold (threshold voltage) of the cell transistor Tr. The resultant impurity diffused layer is not shown.
Subsequently, a second polycrystalline silicon layer 24 doped with donor impurities is buried on the first electrode layer 7 and the surface layer side insulating film 22 (the second formation section 6 b, the collar insulating film and the collar oxide film) in the trench 4. The second polycrystalline silicon layer 24 is etched back so that a level below the surface 1 a of the substrate 1 and above the upper surface of the first electrode layer 7 is reached.
An outer diameter of the trench 4 has recently been reduced and a depth thereof has been increased. Accordingly, when the first polycrystalline silicon layer 23 is buried in the trench 4, the aspect ratio is high such that seams (not shown) are formed in the second polycrystalline silicon layer 24. In the embodiment, however, the collar insulating film (the second formation section 6 b) can be formed on the upper surface 7 a of the first electrode layer 7 without forming an insulating film on the electrode layer 7. Consequently, no insulating film is buried in the seams. In a conventional method, an insulating film is isotropically formed in the trench 4 before the second polycrystalline silicon layer 24 is buried on the upper side 7 a (see FIG. 12) of the first electrode layer 7. Only the insulating film formed on the first electrode layer 7 is removed by the RIE process so that the insulating film remains on the sidewall of the trench 4. The method of the embodiment can form the semiconductor storage device without the aforesaid step of removing the insulating film and accordingly reduce the costs as compared with the above-described conventional method.
Moreover, a good electrical connection can be obtained between the first electrode layer 7 and the second polycrystalline silicon layer 24 since no insulating film is formed between these layers 7 and 24. Consequently, an increase in a contact resistance value can be prevented and failure in write can be reduced. Furthermore, the insulating film 22 is formed at a low temperature before the second polycrystalline silicon layer 24 is buried in the first electrode layer 7. Consequently, outward diffusion of the donor impurities such as arsenic (As) from the first electrode layer 7 (the first polycrystalline silicon layer 23) can be prevented and accordingly, a profile control of the diffusion layer can easily be carried out and accordingly, the memory cell 3 with high reliability can be formed. Additionally, the electrode layer is buried in the trench 4 only twice in the embodiment although the electrode layer needs to be buried in the trench three times in the conventional method.
Subsequently, resist (not shown) is applied so that a resist pattern is formed by the photolithography technique. Thereafter, as shown in FIG. 13, a groove 25 is formed in the silicon substrate 1, the first electrode layer 7, the second polycrystalline silicon layer 24 and the insulating film 6 b by the anisotropic etching process. Subsequently, the TEOS film 26 is deposited as shown in FIG. 14. Furthermore, as shown in FIG. 15, the TEOS film 26 is etched back so that a level near the surface 1 a of the silicon substrate 1 is reached, whereby the silicon nitride film 18 used as a hard mask for forming the trench 4 and the silicon oxide film 17 are removed. Next, the silicon oxide film 13 serving as a gate insulating film is formed on the silicon substrate 1.
Subsequently, as shown in FIG. 16, a high temperature heat treatment is carried out so that the donor impurity (phosphor, arsenic or the like, for example) is diffused outward thereby to be formed into the strap 9. The strap 9 is provided for reducing electrical resistance between the diffusion layer 12 of the cell transistor Tr and the trench capacitor C. Subsequently, as shown in FIG. 17, the gate electrodes 10 of the cell transistor Tr are formed on the silicon oxide film 13 and the STI. The source/drain diffusion layers 11 and 12 are formed on the opposite sides of each gate electrode 10 at the surface layer side of the silicon substrate 1. Further, the sidewall insulating film 15 is formed on the sidewall of each gate electrode 10. In this case, the diffusion layer 12 of the cell transistor Tr is formed so as to be electrically connected to the second electrode layer 8.
Subsequently, as shown in FIG. 1, the interlayer insulating film 16 is buried on the sidewall insulating film 15 formed on the sidewall of each gate electrode 10. The interlayer insulating film 16 is then etched so that a part of the interlayer insulating film 16 on the diffusion layer 11 composing the cell transistor Tr is removed, whereby a contact hall is formed. A barrier metal layer (not shown) and an electrode layer (not shown) are formed in the contact hall, whereby the contact plug 14 is formed.
Subsequently, the bit line BL serving as upper layer winding comprising a titan (Ti) film, tungsten (W) film and the like is formed on the contact plug 14. As a result, the contact plug 14 electrically connects the diffusion layer 11 and the bit line BL together.
According to the above-described manufacturing method, the trench surface insulating film 21 is isotropically formed so as to extend from the surface 1 a side of the silicon substrate 1 toward the deep portion 4 a of the trench 4. The trench surface insulating film 21 is further formed so that the first formation section 6 a at the deep portion 4 a side serves as the capacitor insulating film. The plasma oxidation and plasma nitriding are carried out so that the trench surface insulating film 21 is rendered thin continuously from the surface 1 a side of the silicon substrate 1 toward the deep portion 4 a of the trench 4 in the trench 4, whereby the surface side insulating film 22 is formed. The first polycrystalline silicon layer 23 (electrode layer) is buried inside the insulating films 21 and 22 both formed on the inner surface of the trench 4. The first polycrystalline silicon layer 23 is then etched back so that the first electrode layer 7 is formed.
According to the foregoing embodiment, even when seams (not shown) are formed in the first electrode layer 7, the second formation section 6 b as the collar insulating film can be formed on the upper inner sidewall of the trench 4 without an insulating film on the first electrode layer 7. Consequently, the memory cell 3 of the trench DRAM can readily be formed. Moreover, since the memory cell can be configured without any insulating film on the first electrode layer 7, the electrical contact resistance can be restrained between the first and second electrode layers 7 and 8.
In a modified form of the embodiment, the invention is applied to the p-type silicon substrate in the foregoing embodiment. However, any type of semiconductor substrate may be used. In another modified form, the invention may be applied to a general purpose DRAM, custom DRAM or any device having a DRAM area together with another circuit area.
The foregoing description and drawings are merely illustrative of the principles of the present invention and are not to be construed in a limiting sense. Various changes and modifications will become apparent to those of ordinary skill in the art. All such changes and modifications are seen to fall within the scope of the invention as defined by the appended claims.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a trench formed in the substrate;

an insulating film formed on an inner surface of the trench so as to be rendered thicker from a substrate surface side thereof toward a trench deep side thereof; and

an electrode layer formed inside the insulating film formed inside the trench so as to extend from a trench deep part side toward the surface side of the substrate,

wherein the substrate surface side of the insulating film functions as a collar insulating film retaining an insulation performance between the electrode layer and the semiconductor substrate, and the trench deep side of the insulating film functions as a capacitor insulating film composing a capacitor of a DRAM cell.

2. The semiconductor device according to claim 1, wherein the insulating film is formed so as to have a tapered section and contains a nitrogen atom.