US20070224799A1 - System for making a semiconductor device using bump material including liquid - Google Patents
System for making a semiconductor device using bump material including liquid Download PDFInfo
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- US20070224799A1 US20070224799A1 US11/807,100 US80710007A US2007224799A1 US 20070224799 A1 US20070224799 A1 US 20070224799A1 US 80710007 A US80710007 A US 80710007A US 2007224799 A1 US2007224799 A1 US 2007224799A1
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Definitions
- the present invention relates to a bump forming system, and in particular, relates to a system for forming bumps on a semiconductor wafer such as a silicon wafer or a semiconductor chip such as a silicon chip, with high positional accuracy.
- bumps are formed at specific positions (typically, on pads) on a silicon wafer by printing, ball-bump forming, plating, transfer, wire-bonding, or the like.
- an attracting plate is used for attracting solder or gold balls, and the attracted balls are compressed onto pads on a silicon wafer, so as to form bumps on the pad (see Japanese Unexamined Patent Application, First Publication No. 2003-258012).
- FIG. 8 is a diagram showing a concrete example of a bump forming method using a conventional attracting method.
- reference numeral 21 indicates a silicon wafer
- reference numeral 22 indicates a stage on which the silicon wafer 21 is placed
- reference numeral 23 indicates a chuck (i.e., a fastening device) for fastening the silicon wafer 21 onto the stage 22
- reference numeral 24 indicates gold balls (i.e., bump materials)
- reference numeral 25 indicates an attracting and compressing plate (i.e., an attracting and compressing device) for performing vacuum attraction and ultrasonic compression of the gold balls 24
- reference numeral 26 indicates a finishing plate for pressing the gold balls 24 so as to provide a specific shape to each ball.
- a panel plate 31 has a flat plane 31 a (which is a major plane) on which concave portions 32 , each having an approximately hemispherical shape, for attracting and holding the gold balls 24 are formed, where the positions of the concave portions 32 respectively correspond to the positions of the pads formed on the silicon wafer 21 .
- a passage 33 an end of which is connected to each concave portion 32 , is formed through the plate 31 , where the other end of passage is connected to a vacuum pump or the like, which is used in vacuum attraction of the gold balls 24 .
- the attracting and compressing plate 25 is brought close to the gold balls 24 , and the inside of each concave portion 32 is decompressed via the passage 33 by using a vacuum pump or the like, so that each gold ball 24 is attracted into the concave portion 32 .
- the attracting and compressing plate 25 is moved above the silicon wafer 21 so that the plate 31 is brought close to the silicon wafer 21 .
- each gold ball 24 which has been attracted to the concave portion of the attracting and compressing plate 25 , is placed onto the silicon wafer 21 .
- ultrasonic waves having a specific frequency are applied to the plate 31 so as to vibrate each gold ball 24 and directly compress and bond the gold ball onto the aluminum pad, thereby producing a bump.
- the pitch between pads on a semiconductor device is made shorter, that is, recent devices have fine pitches, so that micro balls to be attracted onto such pads are required.
- the attraction process may repeatedly fail, thereby degrading the yield rate. More specifically, two or three balls 24 may be attracted into a single concave portion 32 , or some balls 24 may fall from the concave portions 32 ; therefore, the success rate of transfer of balls 24 may be reduced and the yield rate of products may also be reduced.
- micro balls 24 tend to fly in air flow, like powder, and also tend to attach to each other by static electricity; thus, it is very difficult to handle them.
- an object of the present invention is to provide a bump forming system for accurately attaching micro bump materials onto pads on a silicon wafer, or the like.
- a bump forming method for forming bumps on pads of a test piece which is a semiconductor wafer or chip comprising:
- each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
- a compressing plate is brought close to the side of the other face of the mask substrate, so as to produce capillary action between the mask substrate and the compressing plate, thereby discharging the bump material including liquid from the holding holes.
- the compressing plate may be pressed onto the other face of the mask substrate, so as to compress and bond the bump materials to the pads.
- a cleaning liquid or gas may be supplied to the target face of the mask substrate so as to remove the bump materials.
- the mask substrate may be vibrated in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
- One aspect of the present invention is directed to a bump forming system for forming bumps on pads of a test piece which is a semiconductor wafer or chip, comprising:
- a supply portion for supplying a bump material including liquid to a target face of the mask substrate
- a compressing plate provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face;
- a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate
- the bump materials included in the bump material including liquid are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.
- each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
- the bump forming system may further comprises a vibrating device for vibrating the mask substrate in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
- the bump material including liquid which contains bump materials is poured toward the mask substrate; thus, bump materials do not attach to each other by static electricity. Therefore, a single bump material can be fastened by a single holding hole.
- the dispersion medium of the bump material including liquid flows and is discharged from the holding holes. Therefore, it is possible to reliably fasten the bump materials to the holding holes along the flow of the dispersion medium.
- the bump materials remaining on the mask substrate are removed, thereby preventing adhesion of bump materials to an area other than the pads of the test piece.
- the bump materials are compressed onto the pads of the test piece by using the compressing plate; thus, the bump materials can be reliably fastened to the pads.
- micro bump materials can be accurately attached onto pads on a silicon wafer, or the like.
- the size of the mask substrate can be easily increased, and it is possible to simultaneously form a large number of bump materials, that is, a large number of bump electrodes on a semiconductor device.
- FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention
- FIG. 2 is a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
- FIG. 3 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
- FIG. 4 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
- FIG. 5 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
- FIG. 6 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment
- FIG. 7 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment.
- FIG. 8 is a diagram for explaining a conventional bump forming method.
- FIG. 9 is also a diagram for explaining a conventional bump forming method.
- FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention, which is a figure for explaining the structure of the bump forming system, and the size, thickness, dimension, and the like, of the explained system do not necessarily coincide with those of actual bump forming systems.
- the bump forming system in FIG. 1 generally includes a mask substrate 2 having holding holes 2 a , a supply portion 3 for supplying liquid L, which includes bump materials (i.e., the bump material including liquid L), onto a face 2 b of the mask substrate 2 , a compressing plate 4 provided at the other face 2 c of the mask substrate 2 in a manner such that the plate 4 can optionally make contact with the other face 2 c , and a cleaning station 8 for supplying a cleaning liquid or gas toward the face 2 b of the mask substrate 2 .
- liquid L which includes bump materials (i.e., the bump material including liquid L)
- a compressing plate 4 provided at the other face 2 c of the mask substrate 2 in a manner such that the plate 4 can optionally make contact with the other face 2 c
- a cleaning station 8 for supplying a cleaning liquid or gas toward the face 2 b of the mask substrate 2 .
- the supply portion 3 includes a tank 3 a which contains the bump material including liquid L including bump materials, and a supply nozzle 3 b provided at the tank 3 a .
- the bump materials are dispersed in a dispersion medium.
- the bump materials are micro ball particles made of a conductive material such as gold or gold alloy.
- the average diameter of the particles of the bump materials is 10 ⁇ m to 100 ⁇ m.
- required granularity is not constant owing to usage or purpose of the system; thus, the above preferable range is not always effective.
- the diameter is preferably 20 ⁇ m or greater.
- the dispersion medium is water or alcohol having high purity.
- water including carbonic acid gas or the like is preferable. Accordingly, the electric resistance of the dispersion medium is lowered, thereby preventing occurrence of static electricity.
- cleaning liquid such as an organic solvent may also be included (in water or the like) so as to prevent adhesion of dirty bumps.
- the above-described liquid having water as the main component is preferable because the system can be more easily managed.
- the percentage content of the bump materials in the bump material containing liquid is approximately 10 to 15 percent by mass with respect to the dispersion medium.
- the mask substrate 2 has holding holes 2 a , each having a circular shape in plan view.
- the holding holes 2 a have a diameter 10 to 40% greater than that of the diameter of the bump materials, so that the bump materials are smoothly fastened to the holding holes 2 a .
- the bump materials can be smoothly fastened into the holes.
- the thickness of the mask substrate 2 is preferably one-fifth to four-fifth as long as the diameter of the bump material.
- the above numerical ranges are reference values, and it is preferred to determine values in consideration of the accuracy of the actual system.
- a vibrating device 9 is provided at the mask substrate 2 so that the mask substrate 2 is vibrated in a direction perpendicular to the thickness direction of the mask substrate 2 .
- a lifting device (not shown) is provided at the compressing plate 4 , where the device can freely ascend and descend with respect to the mask substrate 2 .
- the compressing plate 4 is formed using a flat metal plate or glass plate.
- the compressing plate 4 is also used as a pressing plate in transfer and compression of the bump materials onto pads of a test piece.
- a heater (not shown) is also provided under the compressing plate 4 .
- Bump formation using the bump forming system 1 is generally performed through a fastening process, a removing process, and a compression process.
- the bump material including liquid L is sprinkled onto the face 2 b of the mask substrate 2 from the supply nozzle 3 b of the supply portion 3 . Accordingly, the upper face of the mask substrate 2 is filled with the bump material including liquid L; therefore, a part of the bump materials 5 included or dispersed in the bump material including liquid L falls into the holding holes 2 a of the mask substrate 2 , which hold the part of the bump materials 5 , and the other portion of the bump materials 5 remains on the mask substrate 2 together with the dispersion medium.
- the entire portion of the mask substrate 2 is vibrated using the vibrating device 9 (refer to FIG. 3 ), the bump materials 5 on the mask substrate 2 are again made to float, and the bump materials 5 are inserted and fastened into vacant holding holes 2 a.
- the compressing plate 4 is brought close to the other face 2 c of the mask substrate 2 . Accordingly, capillary action occurs between the other face 2 c and the compressing plate 4 , so that the dispersion medium of the bump material including liquid L is discharged, through the holding holes 2 , between the other face 2 c and the compressing plate 4 .
- the bump materials 5 are also made to flow along with the flow of the dispersion medium and are fastened into vacant holding holes 2 a in turn.
- cleaning liquid S such as water is poured toward the face 2 b of the mask substrate 2 , so as to wash away and remove the bump materials 5 remaining on the face 2 b .
- the mask substrate 2 is slightly vibrated so as to float the excess bump materials 5 again, thereby increasing the efficiency of the removing process.
- the compressing plate 4 is heated using a heating device (not shown) so that the cleaning liquid S is evaporated.
- heat of a temperature sufficient for evaporating the cleaning liquid S e.g., approximately 100° C. in case of water
- rays such as infrared rays, or a warm current of air may be applied from the upper side of the mask substrate 2 .
- a silicon wafer 6 such as a semiconductor wafer (i.e., a test piece) is compressed onto the face 2 b of the mask substrate 2 .
- pads 6 a are provided, which are each compressed onto each bump material 5 .
- the other face 2 c of the mask substrate 2 is made to completely contact with the compressing plate 4 . Accordingly, the bump materials 5 contact the compressing plate 4 and are pushed up, so that the relative position of the mask substrate 2 with respect to the bump materials 5 is shifted toward the compressing plate 4 . Therefore, interference between the silicon wafer 6 and the mask substrate 2 is prevented.
- the compressing plate 4 or the mask substrate 2 , or both of them are vibrated using an ultrasonic vibration system, so as to compress the pads 6 a to the bump materials 5 .
- the bump materials 5 are made of gold or gold alloy and the pads 6 a of the silicon wafer 6 are made of metal such as aluminum, copper, gold, or the like, an alloy layer is produced between the pads 6 a and the bump materials 5 , thereby realizing strong contact.
- heat is applied to perform compressive contact.
- the present method is effective in view of costs and productivity.
- the bump materials 5 can be efficiently and correctly arranged on the mask substrate 2 and can also be transferred onto correct positions. Furthermore, the size of the mask substrate 2 can be fit with that of the silicon wafer 6 ; thus, the present system can be applied to wafers having any size.
- the present invention is a system of directly forming bumps on pads of a semiconductor wafer (such as a silicon wafer); thus, bump formation can be performed after tests (or inspections) of the semiconductor wafer, Therefore, conventional test methods can also be used.
- a semiconductor wafer such as a silicon wafer
- grooves may be provided in the surface of the compressing plate 4 or the other face 2 c
- holes may be provided in areas other than the areas where the holding holes 2 a are provided in the mask substrate 2 , so as to absorb the dispersion medium from the bottom (or lower) side, or
- protrusions of a height of approximately 5 ⁇ m may be provided on the other face 2 c of the mask substrate 2 , that is, between the other face 2 c and the compressing plate 4 , so as to discharge the dispersion medium.
- the above methods should be performed in consideration of vicinity of the dispersion medium, and it is unnecessary to adopt all of the methods.
- the positional relationship between the mask substrate 2 and compressing plate 4 may be upside down.
- gold balls are generally used in the above explanations; however, other conductive balls (made of pure metal or alloy of aluminum, solder, silver, and the like) may be used.
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- Manufacturing & Machinery (AREA)
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- Power Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
A system of making a semiconductor device by forming bumps on pads of a test piece which is a semiconductor wafer or chip is disclosed. The system includes a mask substrate having holding holes; a supply portion for supplying a bump material including liquid, which contains a plurality of individual bump materials, to a target face of the mask substrate, so as to make the bump materials be fastened to the holding holes; a compressing plate, provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face; and a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate. After the bump materials are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.
Description
- This is a divisional of application Ser. No. 11/011,270, filed on Dec. 13, 2004, now U.S. Pat. No. 7,223,682. Priority is claimed on Japanese Patent Application No. 2004-126872, filed on Apr. 22, 2004. The entire content of application Ser. No. 11/011,270 is incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates to a bump forming system, and in particular, relates to a system for forming bumps on a semiconductor wafer such as a silicon wafer or a semiconductor chip such as a silicon chip, with high positional accuracy.
- 2. Description of the Related Art
- In conventional semiconductor devices such as ICs, LSIs, and VLSIs, bumps are formed at specific positions (typically, on pads) on a silicon wafer by printing, ball-bump forming, plating, transfer, wire-bonding, or the like. For example, in transfer, an attracting plate is used for attracting solder or gold balls, and the attracted balls are compressed onto pads on a silicon wafer, so as to form bumps on the pad (see Japanese Unexamined Patent Application, First Publication No. 2003-258012).
-
FIG. 8 is a diagram showing a concrete example of a bump forming method using a conventional attracting method. InFIG. 8 ,reference numeral 21 indicates a silicon wafer,reference numeral 22 indicates a stage on which thesilicon wafer 21 is placed;reference numeral 23 indicates a chuck (i.e., a fastening device) for fastening thesilicon wafer 21 onto thestage 22,reference numeral 24 indicates gold balls (i.e., bump materials),reference numeral 25 indicates an attracting and compressing plate (i.e., an attracting and compressing device) for performing vacuum attraction and ultrasonic compression of thegold balls 24, andreference numeral 26 indicates a finishing plate for pressing thegold balls 24 so as to provide a specific shape to each ball. - The structure of the attracting and
compressing plate 25 will be explained with reference toFIG. 9 . As shown in the figure, apanel plate 31 has aflat plane 31 a (which is a major plane) on whichconcave portions 32, each having an approximately hemispherical shape, for attracting and holding thegold balls 24 are formed, where the positions of theconcave portions 32 respectively correspond to the positions of the pads formed on thesilicon wafer 21. Apassage 33, an end of which is connected to eachconcave portion 32, is formed through theplate 31, where the other end of passage is connected to a vacuum pump or the like, which is used in vacuum attraction of thegold balls 24. - When forming
gold balls 24 on the pads on thesilicon wafer 21, first, the attracting andcompressing plate 25 is brought close to thegold balls 24, and the inside of eachconcave portion 32 is decompressed via thepassage 33 by using a vacuum pump or the like, so that eachgold ball 24 is attracted into theconcave portion 32. In the next step, the attracting andcompressing plate 25 is moved above thesilicon wafer 21 so that theplate 31 is brought close to thesilicon wafer 21. As a result, eachgold ball 24, which has been attracted to the concave portion of the attracting andcompressing plate 25, is placed onto thesilicon wafer 21. In the following step, ultrasonic waves having a specific frequency are applied to theplate 31 so as to vibrate eachgold ball 24 and directly compress and bond the gold ball onto the aluminum pad, thereby producing a bump. - Recently, the pitch between pads on a semiconductor device is made shorter, that is, recent devices have fine pitches, so that micro balls to be attracted onto such pads are required. However, in a conventional bump forming method by attraction, the attraction process may repeatedly fail, thereby degrading the yield rate. More specifically, two or three
balls 24 may be attracted into a singleconcave portion 32, or someballs 24 may fall from theconcave portions 32; therefore, the success rate of transfer ofballs 24 may be reduced and the yield rate of products may also be reduced. - In addition,
micro balls 24 tend to fly in air flow, like powder, and also tend to attach to each other by static electricity; thus, it is very difficult to handle them. - In consideration of the above circumstances, an object of the present invention is to provide a bump forming system for accurately attaching micro bump materials onto pads on a silicon wafer, or the like.
- Disclosed is a bump forming method for forming bumps on pads of a test piece which is a semiconductor wafer or chip, comprising:
- a fastening process of pouring a bump material including liquid toward a target face of a mask substrate in which a plurality of holding holes are provided, and
- making bump materials, included in the bump material including liquid, be fastened to the holding holes;
- a removing process of removing bump materials remaining on the target face of the mask substrate; and
- a compression process of compressing the pads of the test piece from the side of the target face of the mask substrate toward the mask substrate so as to bond the bump materials onto the pads.
- Typically, the shape of each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
- Preferably, in the fastening process, a compressing plate is brought close to the side of the other face of the mask substrate, so as to produce capillary action between the mask substrate and the compressing plate, thereby discharging the bump material including liquid from the holding holes.
- In the compressing process, the compressing plate may be pressed onto the other face of the mask substrate, so as to compress and bond the bump materials to the pads.
- In the removing process, a cleaning liquid or gas may be supplied to the target face of the mask substrate so as to remove the bump materials.
- In the fastening process, the mask substrate may be vibrated in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
- One aspect of the present invention is directed to a bump forming system for forming bumps on pads of a test piece which is a semiconductor wafer or chip, comprising:
- a mask substrate having holding holes;
- a supply portion for supplying a bump material including liquid to a target face of the mask substrate;
- a compressing plate, provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face; and
- a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate,
- wherein after bump materials included in the bump material including liquid are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.
- Typically, the shape of each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
- The bump forming system may further comprises a vibrating device for vibrating the mask substrate in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
- According to the present invention, the bump material including liquid which contains bump materials is poured toward the mask substrate; thus, bump materials do not attach to each other by static electricity. Therefore, a single bump material can be fastened by a single holding hole.
- In addition, when the bump materials are fastened to the holding holes, the dispersion medium of the bump material including liquid flows and is discharged from the holding holes. Therefore, it is possible to reliably fasten the bump materials to the holding holes along the flow of the dispersion medium.
- Additionally, after the bump material fastening step, the bump materials remaining on the mask substrate are removed, thereby preventing adhesion of bump materials to an area other than the pads of the test piece.
- Furthermore, the bump materials are compressed onto the pads of the test piece by using the compressing plate; thus, the bump materials can be reliably fastened to the pads.
- According to the above method and system, micro bump materials can be accurately attached onto pads on a silicon wafer, or the like. In addition, the size of the mask substrate can be easily increased, and it is possible to simultaneously form a large number of bump materials, that is, a large number of bump electrodes on a semiconductor device.
- Other objects and features of the present invention will become apparent from the following detailed description considered in conjunction with the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
- In the drawings:
-
FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention; -
FIG. 2 is a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment; -
FIG. 3 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment; -
FIG. 4 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment; -
FIG. 5 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment; -
FIG. 6 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment; -
FIG. 7 is also a diagram for explaining a process of the bump forming method using the bump forming system in the embodiment; -
FIG. 8 is a diagram for explaining a conventional bump forming method; and -
FIG. 9 is also a diagram for explaining a conventional bump forming method. - Hereinafter, embodiments according to the present invention will be explained with reference to the drawings.
-
FIG. 1 is a diagram showing the general structure of an embodiment of the bump forming system of the present invention, which is a figure for explaining the structure of the bump forming system, and the size, thickness, dimension, and the like, of the explained system do not necessarily coincide with those of actual bump forming systems. - The bump forming system in
FIG. 1 generally includes amask substrate 2 having holdingholes 2 a, a supply portion 3 for supplying liquid L, which includes bump materials (i.e., the bump material including liquid L), onto aface 2 b of themask substrate 2, a compressingplate 4 provided at theother face 2 c of themask substrate 2 in a manner such that theplate 4 can optionally make contact with theother face 2 c, and a cleaning station 8 for supplying a cleaning liquid or gas toward theface 2 b of themask substrate 2. - The supply portion 3 includes a
tank 3 a which contains the bump material including liquid L including bump materials, and asupply nozzle 3 b provided at thetank 3 a. In the bump material including liquid L contained in thetank 3 a, the bump materials are dispersed in a dispersion medium. Specifically, the bump materials are micro ball particles made of a conductive material such as gold or gold alloy. Preferably, the average diameter of the particles of the bump materials is 10 μm to 100 μm. Here, required granularity is not constant owing to usage or purpose of the system; thus, the above preferable range is not always effective. However, in consideration of the strength of themask substrate 2, the diameter is preferably 20 μm or greater. - The dispersion medium is water or alcohol having high purity. In particular, in order to prevent attraction between bump materials or adhesion of bump materials to other portions of the system due to static electricity, water including carbonic acid gas or the like is preferable. Accordingly, the electric resistance of the dispersion medium is lowered, thereby preventing occurrence of static electricity. In addition, cleaning liquid such as an organic solvent may also be included (in water or the like) so as to prevent adhesion of dirty bumps.
- In the case of using alcohol as the main component of the dispersion medium, capability of removing static electricity and cleaning ability are high. However, in this case, an explosion proof system must be designed. Therefore, the above-described liquid having water as the main component is preferable because the system can be more easily managed. Preferably, the percentage content of the bump materials in the bump material containing liquid is approximately 10 to 15 percent by mass with respect to the dispersion medium.
- The
mask substrate 2 has holdingholes 2 a, each having a circular shape in plan view. Preferably, the holdingholes 2 a have a diameter 10 to 40% greater than that of the diameter of the bump materials, so that the bump materials are smoothly fastened to the holding holes 2 a. When slightly chamfering each edge (in theface 2 b) of the holdingholes 2 a, the bump materials can be smoothly fastened into the holes. In consideration of deformation of the bump materials in compression and transfer, the thickness of themask substrate 2 is preferably one-fifth to four-fifth as long as the diameter of the bump material. Here, the above numerical ranges are reference values, and it is preferred to determine values in consideration of the accuracy of the actual system. - In addition, a vibrating device 9 is provided at the
mask substrate 2 so that themask substrate 2 is vibrated in a direction perpendicular to the thickness direction of themask substrate 2. - A lifting device (not shown) is provided at the compressing
plate 4, where the device can freely ascend and descend with respect to themask substrate 2. The compressingplate 4 is formed using a flat metal plate or glass plate. The compressingplate 4 is also used as a pressing plate in transfer and compression of the bump materials onto pads of a test piece. A heater (not shown) is also provided under the compressingplate 4. - The operation of the above-explained bump forming system 1 will be explained hereinbelow. Bump formation using the bump forming system 1 is generally performed through a fastening process, a removing process, and a compression process.
- In the fastening process (see
FIG. 2 ), the bump material including liquid L is sprinkled onto theface 2 b of themask substrate 2 from thesupply nozzle 3 b of the supply portion 3. Accordingly, the upper face of themask substrate 2 is filled with the bump material including liquid L; therefore, a part of thebump materials 5 included or dispersed in the bump material including liquid L falls into the holdingholes 2 a of themask substrate 2, which hold the part of thebump materials 5, and the other portion of thebump materials 5 remains on themask substrate 2 together with the dispersion medium. In this state, the entire portion of themask substrate 2 is vibrated using the vibrating device 9 (refer toFIG. 3 ), thebump materials 5 on themask substrate 2 are again made to float, and thebump materials 5 are inserted and fastened intovacant holding holes 2 a. - As shown in
FIG. 3 , before or simultaneously with vibration of themask substrate 2, the compressingplate 4 is brought close to theother face 2 c of themask substrate 2. Accordingly, capillary action occurs between theother face 2 c and the compressingplate 4, so that the dispersion medium of the bump material including liquid L is discharged, through the holdingholes 2, between theother face 2 c and the compressingplate 4. Thebump materials 5 are also made to flow along with the flow of the dispersion medium and are fastened intovacant holding holes 2 a in turn. Here, only a small amount of dispersion medium flows from occupied holdingholes 2 a (i.e., holding the bump materials 5), and the dispersion medium continuously flows intovacant holding holes 2 a (i.e., in which no bump materials are inserted) and thus thebump materials 5 are fastened in turn. Accordingly, all holdingholes 2 a are filled with thebump materials 5. Whether all holdingholes 2 a of themask substrate 2 are filled with thebump materials 5 can be confirmed, for example, by using a camera provided at the bump forming system 1. - In the next removing process, as shown in
FIG. 4 , cleaning liquid S such as water is poured toward theface 2 b of themask substrate 2, so as to wash away and remove thebump materials 5 remaining on theface 2 b. For easy cleaning, themask substrate 2 is slightly vibrated so as to float theexcess bump materials 5 again, thereby increasing the efficiency of the removing process. In the next step, as shown inFIG. 5 , the compressingplate 4 is heated using a heating device (not shown) so that the cleaning liquid S is evaporated. In this heating step, heat of a temperature sufficient for evaporating the cleaning liquid S (e.g., approximately 100° C. in case of water) is applied from the bottom side of the compressingplate 4 by using a heater. In addition, rays such as infrared rays, or a warm current of air may be applied from the upper side of themask substrate 2. - In the next compression process, as shown in
FIG. 6 , asilicon wafer 6 such as a semiconductor wafer (i.e., a test piece) is compressed onto theface 2 b of themask substrate 2. On the lower surface of thesilicon wafer 6,pads 6 a are provided, which are each compressed onto eachbump material 5. In this process, theother face 2 c of themask substrate 2 is made to completely contact with the compressingplate 4. Accordingly, thebump materials 5 contact the compressingplate 4 and are pushed up, so that the relative position of themask substrate 2 with respect to thebump materials 5 is shifted toward the compressingplate 4. Therefore, interference between thesilicon wafer 6 and themask substrate 2 is prevented. - Also in the compression process, the compressing
plate 4 or themask substrate 2, or both of them are vibrated using an ultrasonic vibration system, so as to compress thepads 6 a to thebump materials 5. When thebump materials 5 are made of gold or gold alloy and thepads 6 a of thesilicon wafer 6 are made of metal such as aluminum, copper, gold, or the like, an alloy layer is produced between thepads 6 a and thebump materials 5, thereby realizing strong contact. In addition, instead of ultrasonic vibration, heat is applied to perform compressive contact. - After compression, as shown in
FIG. 7 , (i) thecompressing plate 4 and themask substrate 2, and (ii) thesilicon wafer 6 are separated from each other by moving these portions in the vertical direction. After that, inspection using a camera is performed for determining whether thebump materials 5, transferred onto thesilicon wafer 6, were transferred to the accurate positions. If an unsatisfactory result is obtained, remounting of a bump material to a target position is performed. Such handling for a single bump material can be performed, for example, by a conventional adhesion method. - According to the above-explained processes, all or a part of the
bump materials 5 can be simultaneously, efficiently, and correctly transferred onto thesilicon wafer 6. Owing to such simultaneous transfer, the time necessary for forming bumps can be shorter in comparison with the other methods, so that the costs for forming bumps can also be reduced. Therefore, the present method is effective in view of costs and productivity. - In addition, according to the present invention, the
bump materials 5 can be efficiently and correctly arranged on themask substrate 2 and can also be transferred onto correct positions. Furthermore, the size of themask substrate 2 can be fit with that of thesilicon wafer 6; thus, the present system can be applied to wafers having any size. - The present invention is a system of directly forming bumps on pads of a semiconductor wafer (such as a silicon wafer); thus, bump formation can be performed after tests (or inspections) of the semiconductor wafer, Therefore, conventional test methods can also be used.
- While preferred embodiments of the invention have been described and illustrated above, it should be understood that these are exemplary of the invention and are not to be considered as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the spirit or scope of the present invention. Accordingly, the invention is not to be considered as being limited by the foregoing description, and is only limited by the scope of the appended claims.
- For example, in order to realize smooth flow of discharged dispersion medium of the bump material including liquid L, (i) grooves may be provided in the surface of the compressing
plate 4 or theother face 2 c, (ii) holes may be provided in areas other than the areas where the holdingholes 2 a are provided in themask substrate 2, so as to absorb the dispersion medium from the bottom (or lower) side, or (iii) protrusions of a height of approximately 5 μm may be provided on theother face 2 c of themask substrate 2, that is, between theother face 2 c and the compressingplate 4, so as to discharge the dispersion medium. The above methods should be performed in consideration of vicinity of the dispersion medium, and it is unnecessary to adopt all of the methods. - The positional relationship between the
mask substrate 2 and compressingplate 4 may be upside down. - Additionally, gold balls are generally used in the above explanations; however, other conductive balls (made of pure metal or alloy of aluminum, solder, silver, and the like) may be used.
- Thus, while there have shown and described and pointed out fundamental novel features of the invention as applied to a preferred embodiment thereof, it will be understood that various omissions and substitutions and changes in the form and details of the devices illustrated, and in their operation, may be made by those skilled in the art without departing from the spirit of the invention. For example, it is expressly intended that all combinations of those elements and/or method steps which perform substantially the same function in substantially the same way to achieve the same results are within the scope of the invention. Moreover, it should be recognized that structures and/or elements and/or method steps shown and/or described in connection with any disclosed form or embodiment of the invention may be incorporated in any other disclosed or described or suggested form or embodiment as a general matter of design choice. It is the intention, therefore, to be limited only as indicated by the scope of the claims appended hereto.
Claims (3)
1. A system of making a semiconductor device by forming bumps on pads of a test piece which is a semiconductor wafer or chip, the system comprising:
a mask substrate having holding holes;
a supply portion for supplying a bump material including liquid, which contains a plurality of individual bump materials, to a target face of the mask substrate, so as to make the bump materials be fastened to the holding holes;
a compressing plate, provided at the side of the other face of the mask substrate, which can optionally be made to contact with the other face; and
a cleaning station for supplying a cleaning liquid or gas to the target face of the mask substrate,
wherein after the bump materials are fastened to the holding holes and the target face is cleaned, the bump materials are pressed, together with the mask substrate, onto the pads of the test piece.
2. The system as claimed in claim 1 , wherein the shape of each bump material is a ball and the thickness of the mask substrate is smaller than the diameter of the ball.
3. The system as claimed in claim 1 , further comprising:
a vibrating device for vibrating the mask substrate in a direction perpendicular to the thickness direction of the mask substrate, so as to fasten the bump materials to vacant holding holes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/807,100 US20070224799A1 (en) | 2004-04-22 | 2007-05-25 | System for making a semiconductor device using bump material including liquid |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JPP2004-126872 | 2004-04-22 | ||
JP2004126872A JP2005311112A (en) | 2004-04-22 | 2004-04-22 | Bump fixing method and device |
US11/011,270 US7223682B2 (en) | 2004-04-22 | 2004-12-13 | Method of making a semiconductor device using bump material including a liquid |
US11/807,100 US20070224799A1 (en) | 2004-04-22 | 2007-05-25 | System for making a semiconductor device using bump material including liquid |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/011,270 Division US7223682B2 (en) | 2004-04-22 | 2004-12-13 | Method of making a semiconductor device using bump material including a liquid |
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US20070224799A1 true US20070224799A1 (en) | 2007-09-27 |
Family
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Family Applications (2)
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US11/011,270 Expired - Fee Related US7223682B2 (en) | 2004-04-22 | 2004-12-13 | Method of making a semiconductor device using bump material including a liquid |
US11/807,100 Abandoned US20070224799A1 (en) | 2004-04-22 | 2007-05-25 | System for making a semiconductor device using bump material including liquid |
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US11/011,270 Expired - Fee Related US7223682B2 (en) | 2004-04-22 | 2004-12-13 | Method of making a semiconductor device using bump material including a liquid |
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JP (1) | JP2005311112A (en) |
TW (1) | TW200535995A (en) |
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US7993969B2 (en) * | 2006-08-10 | 2011-08-09 | Infineon Technologies Ag | Method for producing a module with components stacked one above another |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5539153A (en) * | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
US5861323A (en) * | 1994-06-06 | 1999-01-19 | Microfab Technologies, Inc. | Process for manufacturing metal ball electrodes for a semiconductor device |
US5934545A (en) * | 1997-02-21 | 1999-08-10 | Gordon; Thomas A. | Ball placement method and apparatus for forming a ball grid array |
US20040110366A1 (en) * | 1997-05-27 | 2004-06-10 | Mackay John | Forming solder balls on substrates |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2933065B2 (en) | 1997-06-18 | 1999-08-09 | 日本電気株式会社 | Arrangement method of small metal balls |
JP2003258012A (en) | 2002-02-28 | 2003-09-12 | Umc Japan | Bump-applying device |
-
2004
- 2004-04-22 JP JP2004126872A patent/JP2005311112A/en active Pending
- 2004-12-13 US US11/011,270 patent/US7223682B2/en not_active Expired - Fee Related
- 2004-12-13 TW TW093138530A patent/TW200535995A/en unknown
-
2007
- 2007-05-25 US US11/807,100 patent/US20070224799A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5861323A (en) * | 1994-06-06 | 1999-01-19 | Microfab Technologies, Inc. | Process for manufacturing metal ball electrodes for a semiconductor device |
US5539153A (en) * | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
US5934545A (en) * | 1997-02-21 | 1999-08-10 | Gordon; Thomas A. | Ball placement method and apparatus for forming a ball grid array |
US20040110366A1 (en) * | 1997-05-27 | 2004-06-10 | Mackay John | Forming solder balls on substrates |
Also Published As
Publication number | Publication date |
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JP2005311112A (en) | 2005-11-04 |
US7223682B2 (en) | 2007-05-29 |
US20050239276A1 (en) | 2005-10-27 |
TW200535995A (en) | 2005-11-01 |
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