US20060220700A1 - Flip-flop circuit having low power data retention - Google Patents
Flip-flop circuit having low power data retention Download PDFInfo
- Publication number
- US20060220700A1 US20060220700A1 US11/097,658 US9765805A US2006220700A1 US 20060220700 A1 US20060220700 A1 US 20060220700A1 US 9765805 A US9765805 A US 9765805A US 2006220700 A1 US2006220700 A1 US 2006220700A1
- Authority
- US
- United States
- Prior art keywords
- input
- output
- signal
- coupled
- flip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000014759 maintenance of location Effects 0.000 title description 7
- 230000000295 complement effect Effects 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 230000004044 response Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 74
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000008901 benefit Effects 0.000 description 7
- 230000001934 delay Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3562—Bistable circuits of the master-slave type
- H03K3/35625—Bistable circuits of the master-slave type using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
Definitions
- This invention relates generally to integrated circuits, and more particularly to a flip-flop circuit with low power data retention.
- One method that has been used to reduce leakage current of integrated circuits is to increase the threshold voltage of the transistors in the device.
- simply increasing the threshold voltage of the transistors may result in unwanted consequences such as slowing the operating speed of the device and limiting circuit performance.
- Another method that has been used to reduce leakage current is to “power gate”, or cut off power to certain blocks of the integrated circuit that are not needed when the device is in a low power mode.
- the state of the circuit block is lost.
- state retention is needed in order to prevent loss of important information and allow for proper circuit operation and performance when recovering from a low power mode. Therefore, a need exists for improved circuitry and methods for state retention during, for example, idle or deep sleep modes, which may therefore help in reducing leakage power and extending battery life.
- FIG. 1 illustrates, in logic diagram form, a flip-flop circuit in accordance with one embodiment of the present invention.
- FIG. 2 illustrates a timing diagram of various signals of the flip-flop circuit of FIG. 1 .
- FIG. 3 illustrates, in schematic diagram form, a flip-flop circuit in accordance with another embodiment of the present invention.
- FIG. 4 illustrates, in logic diagram form, a flip-flop circuit in accordance with another embodiment of the present invention.
- FIG. 5 illustrates, in logic diagram form, a flip-flop circuit in accordance with another embodiment of the present invention.
- the present invention provides a flip-flop circuit that retains its state in a low leakage slave latch during a low power mode.
- the flip-flop includes a master latch and the low leakage slave latch.
- the master latch is coupled to receive a power supply voltage that is removed during the low power mode.
- the slave latch receives a power supply voltage that is maintained during the low power mode.
- the master latch latches an input signal during a normal operating mode, and is non-functional in response to entering the low power mode.
- the slave latch has an input/output terminal coupled to the master latch via a transmission gate.
- the slave latch stores the logic state of a signal received from the master latch during the normal operating mode. When power is removed from the master latch during the low power operating mode, the slave latch maintains the latched logic state.
- the slave latch logic does not cause a logic path delay because the slave latch logic is not in a “critical path”, that is, the clock input to data output path, of the integrated circuit.
- the slave latch is also used when the flip-flop is operating in a normal mode, and with only negligible timing delays.
- the negligible timing delays are caused by, for example, capacitive loading.
- the slave latch may be implemented using one or more low leakage transistors, thus further reducing the leakage current.
- FIG. 1 illustrates, in logic diagram form, a flip-flop circuit 10 in accordance with one embodiment of the present invention.
- Flip-flop circuit 10 is implemented on an integrated circuit using CMOS (complementary metal oxide semiconductor) process technology.
- Flip-flop circuit 10 includes an inverter 12 , a master latch 14 , an inverter 16 , a transmission gate 18 , a slave latch 20 , and an output inverter 22 .
- the master latch 14 includes transmission gates 24 and 30 and inverters 26 and 28 .
- the slave latch 20 includes N-channel transistor 32 , transmission gates 34 , 40 , and 42 , and inverters 36 and 38 .
- Inverter 12 has an input for receiving an input signal labeled “D”, and an output.
- Transmission gate 24 has an input connected to the output of inverter 12 , and an output labeled node “N 1 ”.
- Inverter 26 has an input connected to node N 1 .
- An output of inverter 28 is connected to an input of transmission gate 30 .
- Transmission gates 24 and 30 each have true and complementary control inputs for receiving clock signals. Note that an asterisk (*) is used to indicate that a signal name having the asterisk is a logical complement of a signal having the same name but lacking the asterisk.
- Transmission gate 30 receives CK on its true control input and CK* on its complementary control input. Transmission gate 24 receives CK* on its true control input and CK on its complementary control input.
- An output of transmission gate 30 is coupled to node N 1 .
- the output of inverter 26 is coupled to an input of transmission gate 18 through inverter 16 .
- Transmission gate 18 is controlled using complementary clock signals CK/CK*.
- An output of transmission gate 18 is connected to an input of inverter 22 .
- An output of inverter 22 provides an output signal labeled “Q”.
- transmission gate 34 is controlled by complementary power down control signals labeled “PD” and “PD*”.
- Transmission gate 34 connects internal nodes labeled “N 2 ” and “Q*”.
- Inverter 36 has an input connected to node N 2 , and an output connected to an input of inverter 38 .
- Inverter 38 has an output coupled to the inputs of transmission gates 40 and 42 .
- Transmission gate 42 is controlled with clock signals CK/CK* and has an output connected to node N 2 .
- Transmission gate 40 is controlled with control signals PD/PD* and has an output connected node N 2 .
- N-channel transistor 32 has a drain (current electrode) connected to the node Q*, a gate (control electrode) for receiving control signal PD, and a source (current electrode) connected to a power supply voltage terminal labeled “VSS”.
- the control signal PD is de-asserted as a logic low during a normal operating mode, and is asserted as a logic high during a power down mode.
- transmission gates 34 , 40 , and 42 functions as switches and may be implemented using, for example, a single transistor in other embodiments.
- a power supply voltage labeled “VDD” is provided to inverters 26 and 28 of master latch 14 , and to inverters 12 , 16 , and 22 .
- a power supply voltage labeled “VDDC” is provided to inverters 36 and 38 of slave latch 20 .
- the power supply voltage VDD may be removed, meaning that it may be disconnected, allowing leakage currents to slowly pull it towards VSS, or it may be forcibly driven to VSS.
- the power supply voltage VDDC remains on during low power mode.
- the power supply voltages VDD and VDDC may be provided by the same power supply source, or by separate sources.
- the transistors of slave latch 20 are implemented to have a lower leakage current than the transistors of master latch 14 , inverters 12 , 16 , and 22 , and transmission gate 18 .
- Three example ways to achieve lower leakage current on selected devices are to use higher threshold voltages, longer channel lengths, and/or thicker gate dielectric thicknesses. Techniques such as these can be used individually or combined.
- FIG. 2 illustrates a timing diagram of various signals of the flip-flop circuit 10 of FIG. 1 .
- the operation of flip-flop 10 will be described with reference to both FIG. 1 and FIG. 2 .
- cross-hatched areas indicate when the logic state of a signal does not matter. During this time, these signals may be at the potential of VDD, VSS, or somewhere in between.
- flip-flop 10 functions as a conventional D type flip-flop.
- the master latch 14 receives an input signal based of input logic signal D at time Ti.
- the input signal is passed through transmission gate 24 to the pair of inverters 26 and 28 during the time when clock signal CK is a logic low.
- the logic state of node N 1 becomes a logic high at time T 2 .
- the pair of inverters 26 and 28 function as the storage element for the master latch 14 when CK is high while the signal is being passed through inverter 16 , transmission gate 18 and inverter 22 .
- the output signal Q is provided at the output of inverter 22 at time T 3 when clock signal CK is a logic high.
- Q is provided having the same logic state as input signal D.
- the inverter 16 may, for example, be omitted.
- control signal PD is a logic low during the normal operating mode
- transmission gate 34 is conductive and transmission gate 40 is non-conductive, and the pair of inverters 36 and 38 store the logic state provided to node N 2 when clock signal CK becomes a logic low.
- transmission gate 42 is conductive each time clock signal CK is a logic low, thus causing the contents of slave latch 20 to hold the logic state while the clock is low.
- the logic state of node N 2 becomes a logic high at about the same time that Q becomes a logic low if propagation delays are ignored.
- the transmission gates are implemented conventionally with parallel-connected P-channel and N-channel transistors that are controlled using complementary signals. In other embodiments, the transmission gates may be implemented as single transistors that receive one single-ended control signal.
- the power down signal PD is asserted as a logic high as illustrated at time T 4 in FIG. 2 .
- the transmission gate 34 becomes non-conductive, and functions to isolate the pair of inverters 36 and 38 from the rest of the circuit.
- Transmission gate 40 becomes conductive, coupling the input of inverter 36 to the output of inverter 38 so that the logic state stored by inverters 36 and 38 is maintained during the power down mode.
- the input signal D is “don't care” during power down, as illustrated in FIG. 2 , because the slave latch 20 is isolated from the master latch 14 by transmission gate 34 . Also, during power down, the state of the clock signal may float.
- Transmission gate 42 may be conductive or non-conductive, since transmission gate 40 will guarantee that the slave latch is closed.
- N-channel transistor 32 becomes conductive during the power down mode, causing a voltage at the input of inverter 22 to be substantially VSS.
- VSS is at ground potential. This keeps node Q* at a fixed logic value, and prevents excessive current from VDD to VSS inside of inverter 22 prior to removing VDD.
- the slave latch 20 is not in the critical timing path, it may be implemented using transistors having a relatively higher threshold voltage (VT) than the transistors to further reduce leakage current during power down.
- VT threshold voltage
- the power supply is removed, or turned off, after a period of time at time T 5 .
- the period of time is necessary to allow the PD signal to propagate to all flip-flops before VDD is removed.
- the power supply voltage VDDC may be reduced to further reduce leakage current of the slave latch.
- the power supply voltages VDD and VDDC are returned to the normal mode voltage levels.
- the power down signal PD is returned to a logic low.
- the flip-flop 10 is illustrated functioning again in normal mode.
- FIG. 3 illustrates, in schematic diagram form, a flip-flop circuit 50 in accordance with another embodiment of the present invention.
- Flip-flop circuit 50 includes a master latch 52 , an inverter 86 , a transmission gate 92 , a slave latch 54 , and an inverter 146 .
- the master latch 52 includes an inverter/transmission gate 51 , an inverter/transmission gate 62 , and an inverting circuit 72 .
- the slave latch 54 includes transmission gates 98 , 104 , and 112 , inverting circuits 118 and 132 .
- the flip-flop 50 functions similarly to flip-flop 10 in FIG. 1 , except that flip-flop 50 includes a set/reset function.
- FIG. 3 One way to implement the set/reset function in several of the inverting circuits is illustrated in FIG. 3 and will be described below.
- the inverting circuits 51 , 62 , and 72 of master latch 52 receive a power supply voltage labeled “VDD”.
- the inverting circuits 118 and 132 of slave latch 54 receive a power supply voltage labeled “VDDC”.
- the power supply voltage VDD may be switched off during low power mode to reduce leakage current.
- the power supply voltage VDDC is always “on”. Also, the voltage of VDDC can be reduced during low power mode to further reduce leakage current during a low power mode.
- Inverter/transmission gate 51 includes P-channel transistors 54 and 56 and N-channel transistors 58 and 60 .
- Inverter/transmission gate 62 includes P-channel transistors 64 and 66 and N-channel transistors 68 and 70 . As illustrated in FIG.
- the inverter/transmission gates 51 and 62 include both an inverter function and a transmission gate function. In other embodiments, the inverter and the transmission gate of inverter/transmission gates 51 and 62 can be implemented separately.
- Inverting circuit 72 includes P-channel transistors 74 , 76 , and 82 and N-channel transistors 78 , 80 , and 84 . Inverting circuit 72 includes the additional functions of set and reset.
- Inverter 86 includes P-channel transistor 88 and N-channel transistor 90 .
- Transmission gate 92 includes P-channel transistor 94 and N-channel transistor 96 .
- Transmission gate 98 includes N-channel transistor 100 and P-channel transistor 102 .
- Transmission gate 104 includes P-channel transistor 106 and N-channel transistor f 08 .
- Inverting circuit 118 includes P-channel transistors 120 , 124 , and 126 and N-channel transistors 122 , 128 , and 130 .
- Inverting circuit 118 includes the set function and transistors for disabling the set function when power down signal PD is asserted during a low power mode.
- Inverting circuit 132 includes P-channel transistors 134 , 136 , and 138 and N-channel transistors 140 , 142 , and 144 .
- Inverting circuit 132 includes the reset function and transistors for disabling the reset function when power down signal PD is asserted during low power mode.
- Inverter 146 includes P-channel transistor 148 and N-channel transistor 150 .
- Transmission gate 112 includes n-channel transistor 114 and p-channel transistor 116 .
- an input signal D is provided at the input of inverter/transmission gate 51 .
- a reset signal R and a set signal S are normally logic low voltages.
- clock signal CK is a logic low
- the signal D is inverted and provided to an input of inverting circuit 72 .
- the logic state of D* is stored in the pair of inverting circuits 72 and 62 when clock signal CK is a logic high.
- the output of inverting circuit 72 forms the output of master latch 52 and is connected to the input of inverter 86 .
- clock signal CK becomes high, the output of inverter 86 is provided to the input of inverter 146 and to slave latch 54 .
- inverter 146 provides signal Q at the same logic state as input signal D.
- the power down signal PD is a logic low, causing transmission gate 98 to be conductive and transmission gate 112 to be substantially non-conductive.
- Set signal S* is a logic high, and reset signal R* is a logic high.
- the logic state of Q* is stored by the pair of inverting circuits 118 and 132 .
- the power down signal PD is provided as a logic high.
- the transmission gate 98 becomes substantially non-conductive, isolating the pair of inverting circuits 118 and 132 .
- the power supply voltage VDD may be disconnected while the power supply voltage VDDC remains on, or optionally, at a reduced voltage to further reduce leakage current.
- the clock signal CK can be fixed or allowed to float without any adverse effect.
- Transmission gate 112 is conductive and provides a feedback path for the slave latch.
- the N-channel transistor 110 is conductive, causing the input of inverter 146 to be driven to a logic low.
- the flip-flop 50 includes a set/reset function. As can be seen from flip-flop 50 , in normal operation (PD de-asserted), when R is asserted to logic high, Q is forced to a logic low, regardless of the state of CK. Similarly, in normal operation (PD de-asserted), when S is asserted to logic high, Q is forced to a logic high, regardless of the state of CK. In the illustrated embodiment, reset has a higher priority than set if both reset and set are asserted at the same time. Note that during low power mode, the set signal S and reset signal R can float without affecting the state of slave latch 54 .
- transistors 124 , 130 , 134 , and 144 which bypass the set/reset function in the slave latch when PD is asserted.
- other embodiments may have the reset function without the set function, or conversely, the set function without the reset function, or another reset/set priority scheme.
- FIG. 4 illustrates, in logic diagram form, a flip-flop circuit 148 in accordance with another embodiment of the present invention.
- Flip-flop circuit 148 includes inverters 12 , 16 , and 158 , master latch 14 , transmission gate 18 , slave latch 150 , and N-channel transistor 160 .
- the inverters in the master latch receive a power supply voltage labeled “VDD” that is removed during low power modes of operation
- the inverters in the slave latch receive a power supply voltage labeled “VDDC” that remains on at all times.
- the power supply voltage VDDC may be reduced during a low power mode.
- Flip-flop 148 differs from flip-flop 10 in that power down signal PD* and clock signal CK have been combined to create signals labeled “CKPD” and “CKPD*”, thus reducing the number of transmission gates in slave latch 150 as compared to slave latch 20 ( FIG. 1 ).
- NAND logic gate 155 and inverter 157 are illustrated in FIG. 4 as a way to implement the combinational logic, which is powered by VDDC.
- inverter 152 has an input coupled to the output of transmission gate 18 at an input/output node labeled “N 3 ”, and an output.
- Inverter 154 has an input coupled to the output of inverter 152 , and an output.
- Transmission gate 156 has a first signal terminal coupled to the output of transmission gate 18 , a second signal terminal coupled to the output of inverter 154 , and control inputs for receiving the combined clock and power down signals CKPD/CKPD*.
- power down signal PD is not asserted and transmission gate 18 is conductive and transmission gate 156 is non-conductive during logic high clock periods of clock signal CK to allow the output of inverter 16 to pass to inverter 158 .
- power down signal PD is asserted and transmission gate 18 is non-conductive and transmission gate 156 is conductive to isolate slave latch 150 from master latch 14 and inverter 16 and to allow slave latch 150 to retain the last logic state provided by master latch 14 .
- a logic low power down signal PD* causes an optional low-leakage N-channel transistor 160 to eliminate a path to ground for inverter 158 .
- Transistor 160 is necessary only if transistors with significant gate leakage are used for inverter 158 .
- Flip-flop 148 has an advantage of fewer transistors over the embodiment of FIG. 1 , but suffers a performance penalty because the logic to combine clock signal CK and power down signal PD* are on the critical time path. Flip-flop 148 may be desirable over flip-flop 10 in applications where saving surface area on an integrated circuit die is more important that operating speed.
- FIG. 5 illustrates, in logic diagram form, a flip-flop circuit 168 in accordance with another embodiment of the present invention.
- Flip-flop circuit 168 includes inverters 12 , 16 , and 22 , master latch 14 , transmission gate 18 , and slave latch 170 .
- Slave latch 170 includes transmission gates 172 , 174 , 176 , and 178 , and inverters 180 and 182 .
- the inverters in the master latch receive a power supply voltage labeled “VDD” that is removed during low power modes of operation
- the inverters in the slave latch receive a power supply voltage labeled “VDDC” that remains on at all times.
- the power supply voltage VDDC may be reduced during a low power mode.
- Flip-flop 168 differs from flip-flop 10 in that it includes two isolation transmission gates 174 and 176 instead of one.
- transmission gate 174 has a first signal terminal coupled to transmission gate 18 at an input/output node labeled “N 4 ”, a second signal terminal coupled to the input of the inverter 180 , and control inputs for receiving power down signals PD/PD*.
- Transmission gate 172 has a first signal terminal coupled to the first signal terminal of transmission gate 174 , a second signal terminal, and a control input for receiving clock signals CK/CK*.
- Transmission gate 176 has a first signal terminal coupled to the second signal terminal of transmission gate 172 , a second signal terminal coupled to the output of inverter 182 , and a control input for receiving power down signals PD/PD*.
- Transmission gate 176 has a first signal terminal coupled to the input of inverter 180 , a second signal terminal coupled to the output of inverter 182 , and a control input for receiving power down signals PD/PD*.
- power down signal PD is not asserted and transmission gates 174 and 176 are conductive and transmission gate 178 is non-conductive.
- power down signal PD is asserted and transmission gates 174 and 176 are non-conductive and transmission gate 178 is conductive to isolate inverters 180 and 182 and to allow slave latch 170 to retain the last logic state provided by master latch 14 .
- the illustrated embodiment describes an N-channel transistor 32 that pulls the node Q* to VSS.
- the node Q* may be pulled to, for example, VDD.
Landscapes
- Logic Circuits (AREA)
Abstract
Description
- A related, copending application is entitled “Flip-Flop Circuit Having Low Power Data Retention”, by Padhye et al., attorney docket number SC13986TC, is assigned to the assignee hereof, and filed concurrently herewith.
- A related, copending application is entitled “State Retention Within A Data Processing System”, by Padhye et al., application Ser. No. 10/818,861, is assigned to the assignee hereof, and filed on Apr. 6, 2004.
- A related, copending application is entitled “State Retention Within A Data Processing System”, by Padhye et al., application Ser. No. 10/819,383, is assigned to the assignee hereof, and filed on Apr. 6, 2004.
- This invention relates generally to integrated circuits, and more particularly to a flip-flop circuit with low power data retention.
- Lower power consumption has been gaining importance in integrated circuit data processing systems due to, for example, wide spread use of portable and handheld applications. Most circuits in handheld devices are typically off (e.g., in an idle or deep sleep mode) for a significant portion of time, consuming only leakage power. As transistor leakage currents increase with finer geometry manufacturing processes, it becomes more difficult to meet chip leakage targets using traditional power reduction techniques. Therefore, reducing leakage current is becoming an increasingly important factor in extending battery life.
- One method that has been used to reduce leakage current of integrated circuits is to increase the threshold voltage of the transistors in the device. However, simply increasing the threshold voltage of the transistors may result in unwanted consequences such as slowing the operating speed of the device and limiting circuit performance.
- Another method that has been used to reduce leakage current is to “power gate”, or cut off power to certain blocks of the integrated circuit that are not needed when the device is in a low power mode. However, in doing so, the state of the circuit block is lost. In many circuit blocks state retention is needed in order to prevent loss of important information and allow for proper circuit operation and performance when recovering from a low power mode. Therefore, a need exists for improved circuitry and methods for state retention during, for example, idle or deep sleep modes, which may therefore help in reducing leakage power and extending battery life.
- The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to like elements and in which:
-
FIG. 1 illustrates, in logic diagram form, a flip-flop circuit in accordance with one embodiment of the present invention. -
FIG. 2 illustrates a timing diagram of various signals of the flip-flop circuit ofFIG. 1 . -
FIG. 3 illustrates, in schematic diagram form, a flip-flop circuit in accordance with another embodiment of the present invention. -
FIG. 4 illustrates, in logic diagram form, a flip-flop circuit in accordance with another embodiment of the present invention. -
FIG. 5 illustrates, in logic diagram form, a flip-flop circuit in accordance with another embodiment of the present invention. - Generally, in one embodiment, the present invention provides a flip-flop circuit that retains its state in a low leakage slave latch during a low power mode. The flip-flop includes a master latch and the low leakage slave latch. The master latch is coupled to receive a power supply voltage that is removed during the low power mode. The slave latch receives a power supply voltage that is maintained during the low power mode. The master latch latches an input signal during a normal operating mode, and is non-functional in response to entering the low power mode. The slave latch has an input/output terminal coupled to the master latch via a transmission gate. The slave latch stores the logic state of a signal received from the master latch during the normal operating mode. When power is removed from the master latch during the low power operating mode, the slave latch maintains the latched logic state.
- During normal operation, the slave latch logic does not cause a logic path delay because the slave latch logic is not in a “critical path”, that is, the clock input to data output path, of the integrated circuit. In addition to maintaining a logic state during a low power mode, the slave latch is also used when the flip-flop is operating in a normal mode, and with only negligible timing delays. The negligible timing delays are caused by, for example, capacitive loading. The slave latch may be implemented using one or more low leakage transistors, thus further reducing the leakage current.
-
FIG. 1 illustrates, in logic diagram form, a flip-flop circuit 10 in accordance with one embodiment of the present invention. Flip-flop circuit 10 is implemented on an integrated circuit using CMOS (complementary metal oxide semiconductor) process technology. Flip-flop circuit 10 includes aninverter 12, amaster latch 14, aninverter 16, atransmission gate 18, aslave latch 20, and anoutput inverter 22. Themaster latch 14 includestransmission gates inverters slave latch 20 includes N-channel transistor 32,transmission gates inverters -
Inverter 12 has an input for receiving an input signal labeled “D”, and an output.Transmission gate 24 has an input connected to the output ofinverter 12, and an output labeled node “N1”.Inverter 26 has an input connected to node N1. An output ofinverter 28 is connected to an input oftransmission gate 30.Transmission gates Transmission gate 30 receives CK on its true control input and CK* on its complementary control input.Transmission gate 24 receives CK* on its true control input and CK on its complementary control input. An output oftransmission gate 30 is coupled to node N1. The output ofinverter 26 is coupled to an input oftransmission gate 18 throughinverter 16.Transmission gate 18 is controlled using complementary clock signals CK/CK*. An output oftransmission gate 18 is connected to an input ofinverter 22. An output ofinverter 22 provides an output signal labeled “Q”. - In
slave latch 20,transmission gate 34 is controlled by complementary power down control signals labeled “PD” and “PD*”.Transmission gate 34 connects internal nodes labeled “N2” and “Q*”.Inverter 36 has an input connected to node N2, and an output connected to an input ofinverter 38.Inverter 38 has an output coupled to the inputs oftransmission gates Transmission gate 42 is controlled with clock signals CK/CK* and has an output connected to node N2.Transmission gate 40 is controlled with control signals PD/PD* and has an output connected node N2. N-channel transistor 32 has a drain (current electrode) connected to the node Q*, a gate (control electrode) for receiving control signal PD, and a source (current electrode) connected to a power supply voltage terminal labeled “VSS”. The control signal PD is de-asserted as a logic low during a normal operating mode, and is asserted as a logic high during a power down mode. Note thattransmission gates - A power supply voltage labeled “VDD” is provided to
inverters master latch 14, and toinverters inverters slave latch 20. During low power mode, the power supply voltage VDD may be removed, meaning that it may be disconnected, allowing leakage currents to slowly pull it towards VSS, or it may be forcibly driven to VSS. The power supply voltage VDDC remains on during low power mode. The power supply voltages VDD and VDDC may be provided by the same power supply source, or by separate sources. - The transistors of
slave latch 20 are implemented to have a lower leakage current than the transistors ofmaster latch 14,inverters transmission gate 18. Three example ways to achieve lower leakage current on selected devices are to use higher threshold voltages, longer channel lengths, and/or thicker gate dielectric thicknesses. Techniques such as these can be used individually or combined. -
FIG. 2 illustrates a timing diagram of various signals of the flip-flop circuit 10 ofFIG. 1 . The operation of flip-flop 10 will be described with reference to bothFIG. 1 andFIG. 2 . Note that inFIG. 2 , cross-hatched areas indicate when the logic state of a signal does not matter. During this time, these signals may be at the potential of VDD, VSS, or somewhere in between. - During a normal operating mode, labeled “NORMAL MODE” in
FIG. 2 , flip-flop 10 functions as a conventional D type flip-flop. Themaster latch 14 receives an input signal based of input logic signal D at time Ti. The input signal is passed throughtransmission gate 24 to the pair ofinverters inverters master latch 14 when CK is high while the signal is being passed throughinverter 16,transmission gate 18 andinverter 22. The output signal Q is provided at the output ofinverter 22 at time T3 when clock signal CK is a logic high. In the illustrated embodiment, Q is provided having the same logic state as input signal D. However, in other embodiments, it may be desired to provide Q as a logical complement of signal D. To do this, theinverter 16 may, for example, be omitted. - Also, during the normal mode, the logic state of
master latch 14 is retained byslave latch 20. Because control signal PD is a logic low during the normal operating mode,transmission gate 34 is conductive andtransmission gate 40 is non-conductive, and the pair ofinverters transmission gate 42 is conductive each time clock signal CK is a logic low, thus causing the contents ofslave latch 20 to hold the logic state while the clock is low. At time T3, the logic state of node N2 becomes a logic high at about the same time that Q becomes a logic low if propagation delays are ignored. Note that in the illustrated embodiment, the transmission gates are implemented conventionally with parallel-connected P-channel and N-channel transistors that are controlled using complementary signals. In other embodiments, the transmission gates may be implemented as single transistors that receive one single-ended control signal. - During a low power operating mode, labeled “POWER DOWN MODE” in
FIG. 2 , the power down signal PD is asserted as a logic high as illustrated at time T4 inFIG. 2 . Thetransmission gate 34 becomes non-conductive, and functions to isolate the pair ofinverters Transmission gate 40 becomes conductive, coupling the input ofinverter 36 to the output ofinverter 38 so that the logic state stored byinverters FIG. 2 , because theslave latch 20 is isolated from themaster latch 14 bytransmission gate 34. Also, during power down, the state of the clock signal may float.Transmission gate 42 may be conductive or non-conductive, sincetransmission gate 40 will guarantee that the slave latch is closed. N-channel transistor 32 becomes conductive during the power down mode, causing a voltage at the input ofinverter 22 to be substantially VSS. In the illustrated embodiment, VSS is at ground potential. This keeps node Q* at a fixed logic value, and prevents excessive current from VDD to VSS inside ofinverter 22 prior to removing VDD. Because theslave latch 20 is not in the critical timing path, it may be implemented using transistors having a relatively higher threshold voltage (VT) than the transistors to further reduce leakage current during power down. - Also during the low power mode, the power supply is removed, or turned off, after a period of time at time T5. The period of time is necessary to allow the PD signal to propagate to all flip-flops before VDD is removed. In addition, as illustrated in
FIG. 2 at time T6, the power supply voltage VDDC may be reduced to further reduce leakage current of the slave latch. To return to normal mode, at time T7, the power supply voltages VDD and VDDC are returned to the normal mode voltage levels. Then at time T8, the power down signal PD is returned to a logic low. Between times T8 and T12, the flip-flop 10 is illustrated functioning again in normal mode. At time T9, input signal D transitions to a logic high, causing node N1 to become a logic low. Node N2 becomes a logic low at time T1O. At time T11, input signal D transitions to a logic low, and node N1 becomes a logic high, followed by node N2 becoming a logic high and output signal Q becoming a logic low at time T12. -
FIG. 3 illustrates, in schematic diagram form, a flip-flop circuit 50 in accordance with another embodiment of the present invention. Flip-flop circuit 50 includes amaster latch 52, aninverter 86, atransmission gate 92, aslave latch 54, and aninverter 146. Themaster latch 52 includes an inverter/transmission gate 51, an inverter/transmission gate 62, and an invertingcircuit 72. Theslave latch 54 includestransmission gates circuits flop 50 functions similarly to flip-flop 10 inFIG. 1 , except that flip-flop 50 includes a set/reset function. One way to implement the set/reset function in several of the inverting circuits is illustrated inFIG. 3 and will be described below. - The inverting
circuits master latch 52 receive a power supply voltage labeled “VDD”. The invertingcircuits slave latch 54 receive a power supply voltage labeled “VDDC”. The power supply voltage VDD may be switched off during low power mode to reduce leakage current. The power supply voltage VDDC is always “on”. Also, the voltage of VDDC can be reduced during low power mode to further reduce leakage current during a low power mode. Inverter/transmission gate 51 includes P-channel transistors channel transistors 58 and 60. Inverter/transmission gate 62 includes P-channel transistors channel transistors FIG. 3 , the inverter/transmission gates transmission gates circuit 72 includes P-channel transistors 74, 76, and 82 and N-channel transistors circuit 72 includes the additional functions of set and reset.Inverter 86 includes P-channel transistor 88 and N-channel transistor 90.Transmission gate 92 includes P-channel transistor 94 and N-channel transistor 96.Transmission gate 98 includes N-channel transistor 100 and P-channel transistor 102.Transmission gate 104 includes P-channel transistor 106 and N-channel transistor f08. Invertingcircuit 118 includes P-channel transistors channel transistors circuit 118 includes the set function and transistors for disabling the set function when power down signal PD is asserted during a low power mode. Invertingcircuit 132 includes P-channel transistors channel transistors circuit 132 includes the reset function and transistors for disabling the reset function when power down signal PD is asserted during low power mode.Inverter 146 includes P-channel transistor 148 and N-channel transistor 150.Transmission gate 112 includes n-channel transistor 114 and p-channel transistor 116. - In normal operation of flip-
flop 50, an input signal D is provided at the input of inverter/transmission gate 51. A reset signal R and a set signal S are normally logic low voltages. When clock signal CK is a logic low, the signal D is inverted and provided to an input of invertingcircuit 72. The logic state of D* is stored in the pair of invertingcircuits circuit 72 forms the output ofmaster latch 52 and is connected to the input ofinverter 86. When clock signal CK becomes high, the output ofinverter 86 is provided to the input ofinverter 146 and toslave latch 54. The output ofinverter 146 provides signal Q at the same logic state as input signal D. During normal operation of the slave latch, the power down signal PD is a logic low, causingtransmission gate 98 to be conductive andtransmission gate 112 to be substantially non-conductive. Set signal S* is a logic high, and reset signal R* is a logic high. The logic state of Q* is stored by the pair of invertingcircuits - During a low power mode of operation, the power down signal PD is provided as a logic high. The
transmission gate 98 becomes substantially non-conductive, isolating the pair of invertingcircuits Transmission gate 112 is conductive and provides a feedback path for the slave latch. The N-channel transistor 110 is conductive, causing the input ofinverter 146 to be driven to a logic low. - The flip-
flop 50 includes a set/reset function. As can be seen from flip-flop 50, in normal operation (PD de-asserted), when R is asserted to logic high, Q is forced to a logic low, regardless of the state of CK. Similarly, in normal operation (PD de-asserted), when S is asserted to logic high, Q is forced to a logic high, regardless of the state of CK. In the illustrated embodiment, reset has a higher priority than set if both reset and set are asserted at the same time. Note that during low power mode, the set signal S and reset signal R can float without affecting the state ofslave latch 54. This is achieved bytransistors -
FIG. 4 illustrates, in logic diagram form, a flip-flop circuit 148 in accordance with another embodiment of the present invention. Note that throughout the figures, the same reference numbers will be used for like or similar elements for the purpose of brevity. Flip-flop circuit 148 includesinverters master latch 14,transmission gate 18,slave latch 150, and N-channel transistor 160. As illustrated above inFIG. 1 , the inverters in the master latch receive a power supply voltage labeled “VDD” that is removed during low power modes of operation, and the inverters in the slave latch receive a power supply voltage labeled “VDDC” that remains on at all times. Optionally, the power supply voltage VDDC may be reduced during a low power mode. - Flip-
flop 148 differs from flip-flop 10 in that power down signal PD* and clock signal CK have been combined to create signals labeled “CKPD” and “CKPD*”, thus reducing the number of transmission gates inslave latch 150 as compared to slave latch 20 (FIG. 1 ).NAND logic gate 155 andinverter 157 are illustrated inFIG. 4 as a way to implement the combinational logic, which is powered by VDDC. Inslave latch 150,inverter 152 has an input coupled to the output oftransmission gate 18 at an input/output node labeled “N3”, and an output.Inverter 154 has an input coupled to the output ofinverter 152, and an output.Transmission gate 156 has a first signal terminal coupled to the output oftransmission gate 18, a second signal terminal coupled to the output ofinverter 154, and control inputs for receiving the combined clock and power down signals CKPD/CKPD*. - During a normal operating mode, power down signal PD is not asserted and
transmission gate 18 is conductive andtransmission gate 156 is non-conductive during logic high clock periods of clock signal CK to allow the output ofinverter 16 to pass toinverter 158. During a low power mode, power down signal PD is asserted andtransmission gate 18 is non-conductive andtransmission gate 156 is conductive to isolateslave latch 150 frommaster latch 14 andinverter 16 and to allowslave latch 150 to retain the last logic state provided bymaster latch 14. Also, during the low power mode, a logic low power down signal PD* causes an optional low-leakage N-channel transistor 160 to eliminate a path to ground forinverter 158.Transistor 160 is necessary only if transistors with significant gate leakage are used forinverter 158. - Flip-
flop 148 has an advantage of fewer transistors over the embodiment ofFIG. 1 , but suffers a performance penalty because the logic to combine clock signal CK and power down signal PD* are on the critical time path. Flip-flop 148 may be desirable over flip-flop 10 in applications where saving surface area on an integrated circuit die is more important that operating speed. -
FIG. 5 illustrates, in logic diagram form, a flip-flop circuit 168 in accordance with another embodiment of the present invention. Flip-flop circuit 168 includesinverters master latch 14,transmission gate 18, andslave latch 170.Slave latch 170 includestransmission gates inverters FIG. 1 andFIG. 4 , the inverters in the master latch receive a power supply voltage labeled “VDD” that is removed during low power modes of operation, and the inverters in the slave latch receive a power supply voltage labeled “VDDC” that remains on at all times. Optionally, the power supply voltage VDDC may be reduced during a low power mode. - Flip-
flop 168 differs from flip-flop 10 in that it includes twoisolation transmission gates slave latch 170,transmission gate 174 has a first signal terminal coupled totransmission gate 18 at an input/output node labeled “N4”, a second signal terminal coupled to the input of theinverter 180, and control inputs for receiving power down signals PD/PD*.Transmission gate 172 has a first signal terminal coupled to the first signal terminal oftransmission gate 174, a second signal terminal, and a control input for receiving clock signals CK/CK*.Transmission gate 176 has a first signal terminal coupled to the second signal terminal oftransmission gate 172, a second signal terminal coupled to the output ofinverter 182, and a control input for receiving power down signals PD/PD*.Transmission gate 176 has a first signal terminal coupled to the input ofinverter 180, a second signal terminal coupled to the output ofinverter 182, and a control input for receiving power down signals PD/PD*. - During a normal operating mode, power down signal PD is not asserted and
transmission gates transmission gate 178 is non-conductive. During a low power mode, power down signal PD is asserted andtransmission gates transmission gate 178 is conductive to isolateinverters slave latch 170 to retain the last logic state provided bymaster latch 14. - While the invention has been described in the context of a preferred embodiment, it will be apparent to those skilled in the art that the present invention may be modified in numerous ways and may assume many embodiments other than that specifically set out and described above. For example, the illustrated embodiment describes an N-
channel transistor 32 that pulls the node Q* to VSS. In other embodiments, the node Q* may be pulled to, for example, VDD. - Accordingly, it is intended by the appended claims to cover all modifications of the invention which fall within the true scope of the invention.
- Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any element(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature or element of any or all the claims. As used herein, the terms “comprises,” “comprising,” or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/097,658 US7123068B1 (en) | 2005-04-01 | 2005-04-01 | Flip-flop circuit having low power data retention |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/097,658 US7123068B1 (en) | 2005-04-01 | 2005-04-01 | Flip-flop circuit having low power data retention |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060220700A1 true US20060220700A1 (en) | 2006-10-05 |
US7123068B1 US7123068B1 (en) | 2006-10-17 |
Family
ID=37069624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/097,658 Active 2025-06-14 US7123068B1 (en) | 2005-04-01 | 2005-04-01 | Flip-flop circuit having low power data retention |
Country Status (1)
Country | Link |
---|---|
US (1) | US7123068B1 (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080250280A1 (en) * | 2007-03-22 | 2008-10-09 | Soon Seng Seh | Sharing routing of a test signal with an alternative power supply to combinatorial logic for low power design |
US20090066385A1 (en) * | 2007-09-12 | 2009-03-12 | Freescale Semiconductor, Inc. | Latch device having low-power data retention |
US20120119783A1 (en) * | 2010-11-11 | 2012-05-17 | Jung Gunok | Latch circuit, flip-flop having the same and data latching method |
US20140375360A1 (en) * | 2013-06-24 | 2014-12-25 | Orise Technology Co., Ltd. | Source driver with reduced number of latch devices |
CN104579298A (en) * | 2013-10-16 | 2015-04-29 | 三星电子株式会社 | Flip-flop and semiconductor circuit |
US9038012B2 (en) | 2011-06-02 | 2015-05-19 | Arizona Board Of Regents On Behalf Of Arizona State University | Sequential state elements in triple-mode redundant (TMR) state machines |
US9041429B2 (en) | 2011-06-02 | 2015-05-26 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Sequential state elements for triple-mode redundant state machines, related methods, and systems |
US9054688B2 (en) | 2012-09-19 | 2015-06-09 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Sequential state elements radiation hardened by design |
US9734272B2 (en) | 2014-06-13 | 2017-08-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Techniques for generating physical layouts of in silico multi mode integrated circuits |
US10340899B2 (en) * | 2017-02-28 | 2019-07-02 | Texas Instruments Incorporated | High performance low retention mode leakage flip-flop |
US10579536B2 (en) | 2016-08-09 | 2020-03-03 | Arizona Board Of Regents On Behalf Of Arizona State University | Multi-mode radiation hardened multi-core microprocessors |
KR20230010470A (en) * | 2021-07-12 | 2023-01-19 | 주식회사 키파운드리 | Low power retention flip-flop |
US20230050338A1 (en) * | 2021-08-05 | 2023-02-16 | Key Foundry Co., Ltd. | Low power retention flip-flop |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7639056B2 (en) * | 2005-05-26 | 2009-12-29 | Texas Instruments Incorporated | Ultra low area overhead retention flip-flop for power-down applications |
US20070147572A1 (en) * | 2005-12-28 | 2007-06-28 | Intel Corporation | Registers for an enhanced idle architectural state |
US7583121B2 (en) * | 2007-08-30 | 2009-09-01 | Freescale Semiconductor, Inc. | Flip-flop having logic state retention during a power down mode and method therefor |
US7908500B2 (en) * | 2007-10-01 | 2011-03-15 | Silicon Laboratories Inc. | Low power retention flip-flops |
US8169759B2 (en) * | 2008-01-28 | 2012-05-01 | Micron Technology, Inc. | Circuit and methods to protect input buffer |
US7791389B2 (en) * | 2008-01-30 | 2010-09-07 | Freescale Semiconductor, Inc. | State retaining power gated latch and method therefor |
TW200943720A (en) * | 2008-04-03 | 2009-10-16 | Faraday Tech Corp | Apparatus of data retention for multi power domains |
US8076965B2 (en) * | 2008-04-10 | 2011-12-13 | Broadcom Corporation | Low leakage data retention flip flop |
US7683697B2 (en) * | 2008-05-30 | 2010-03-23 | Freescale Semiconductor, Inc. | Circuitry and method for buffering a power mode control signal |
US8296703B1 (en) | 2008-12-19 | 2012-10-23 | Cadence Design Systems, Inc. | Fault modeling for state retention logic |
US9350325B2 (en) * | 2012-05-30 | 2016-05-24 | Qualcomm, Incorporated | Reduced dynamic power D flip-flop |
CN104104360B (en) * | 2013-04-03 | 2018-06-08 | 恩智浦美国有限公司 | Low-power SRPG cell |
US9673786B2 (en) * | 2013-04-12 | 2017-06-06 | Qualcomm Incorporated | Flip-flop with reduced retention voltage |
US8994430B2 (en) * | 2013-05-17 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9152430B2 (en) | 2013-06-04 | 2015-10-06 | Freescale Semiconductor, Inc. | Method for low power boot for microcontroller |
US10222421B1 (en) | 2018-02-14 | 2019-03-05 | Silicon Laboratories Inc. | Method for detecting faults on retention cell pins |
US20230246647A1 (en) * | 2022-01-28 | 2023-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power loss regulation circuit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492854B1 (en) * | 2001-08-30 | 2002-12-10 | Hewlett Packard Company | Power efficient and high performance flip-flop |
US20040090256A1 (en) * | 2002-11-07 | 2004-05-13 | Sung-We Cho | MTCMOS flip-flop circuit capable of retaining data in sleep mode |
US6873197B2 (en) * | 2000-12-28 | 2005-03-29 | Nec Electronics Corp | Scan flip-flop circuit capable of guaranteeing normal operation |
-
2005
- 2005-04-01 US US11/097,658 patent/US7123068B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6873197B2 (en) * | 2000-12-28 | 2005-03-29 | Nec Electronics Corp | Scan flip-flop circuit capable of guaranteeing normal operation |
US6492854B1 (en) * | 2001-08-30 | 2002-12-10 | Hewlett Packard Company | Power efficient and high performance flip-flop |
US20040090256A1 (en) * | 2002-11-07 | 2004-05-13 | Sung-We Cho | MTCMOS flip-flop circuit capable of retaining data in sleep mode |
US6870412B2 (en) * | 2002-11-07 | 2005-03-22 | Samsung Electronics Co., Ltd. | MTCMOS flip-flop circuit capable of retaining data in sleep mode |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7644328B2 (en) * | 2007-03-22 | 2010-01-05 | Intel Corporation | Sharing routing of a test signal with an alternative power supply to combinatorial logic for low power design |
US20080250280A1 (en) * | 2007-03-22 | 2008-10-09 | Soon Seng Seh | Sharing routing of a test signal with an alternative power supply to combinatorial logic for low power design |
US20090066385A1 (en) * | 2007-09-12 | 2009-03-12 | Freescale Semiconductor, Inc. | Latch device having low-power data retention |
US7710177B2 (en) | 2007-09-12 | 2010-05-04 | Freescale Semiconductor, Inc. | Latch device having low-power data retention |
US20120119783A1 (en) * | 2010-11-11 | 2012-05-17 | Jung Gunok | Latch circuit, flip-flop having the same and data latching method |
US8432188B2 (en) * | 2010-11-11 | 2013-04-30 | Samsung Electronics Co., Ltd. | Latch circuit, flip-flop having the same and data latching method |
US9038012B2 (en) | 2011-06-02 | 2015-05-19 | Arizona Board Of Regents On Behalf Of Arizona State University | Sequential state elements in triple-mode redundant (TMR) state machines |
US9041429B2 (en) | 2011-06-02 | 2015-05-26 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Sequential state elements for triple-mode redundant state machines, related methods, and systems |
US9054688B2 (en) | 2012-09-19 | 2015-06-09 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Sequential state elements radiation hardened by design |
US20140375360A1 (en) * | 2013-06-24 | 2014-12-25 | Orise Technology Co., Ltd. | Source driver with reduced number of latch devices |
US9477104B2 (en) * | 2013-06-24 | 2016-10-25 | Focaltech Systems Co., Ltd. | Source driver with reduced number of latch devices |
CN104579298A (en) * | 2013-10-16 | 2015-04-29 | 三星电子株式会社 | Flip-flop and semiconductor circuit |
TWI648953B (en) * | 2013-10-16 | 2019-01-21 | 三星電子股份有限公司 | Flip-flop and semiconductor circuit |
US9734272B2 (en) | 2014-06-13 | 2017-08-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Techniques for generating physical layouts of in silico multi mode integrated circuits |
US10579536B2 (en) | 2016-08-09 | 2020-03-03 | Arizona Board Of Regents On Behalf Of Arizona State University | Multi-mode radiation hardened multi-core microprocessors |
US10340899B2 (en) * | 2017-02-28 | 2019-07-02 | Texas Instruments Incorporated | High performance low retention mode leakage flip-flop |
KR20230010470A (en) * | 2021-07-12 | 2023-01-19 | 주식회사 키파운드리 | Low power retention flip-flop |
KR102591208B1 (en) * | 2021-07-12 | 2023-10-20 | 주식회사 키파운드리 | Low power retention flip-flop |
US20230050338A1 (en) * | 2021-08-05 | 2023-02-16 | Key Foundry Co., Ltd. | Low power retention flip-flop |
US11990909B2 (en) * | 2021-08-05 | 2024-05-21 | Sk Keyfoundry Inc. | Low power retention flip-flop |
Also Published As
Publication number | Publication date |
---|---|
US7123068B1 (en) | 2006-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7123068B1 (en) | Flip-flop circuit having low power data retention | |
US7138842B2 (en) | Flip-flop circuit having low power data retention | |
US7583121B2 (en) | Flip-flop having logic state retention during a power down mode and method therefor | |
US7791389B2 (en) | State retaining power gated latch and method therefor | |
US7514975B2 (en) | Data retention in operational and sleep modes | |
US7649393B2 (en) | Semiconductor integrated circuit having active and sleep modes and non-retention flip-flop that is initialized when switching from sleep mode to active mode | |
US6586982B2 (en) | Semiconductor circuit having a combination circuit being switched between an active and inactive state | |
US7154317B2 (en) | Latch circuit including a data retention latch | |
US7405606B2 (en) | D flip-flop | |
US7215188B2 (en) | Integrated circuit having a low power mode and method therefor | |
CN103684355B (en) | Gated clock latch, its operational approach and adopt its integrated circuit | |
US6492854B1 (en) | Power efficient and high performance flip-flop | |
US6310491B1 (en) | Sequential logic circuit with active and sleep modes | |
EP1331736A1 (en) | Flip-flop with reduced leakage current | |
US20110018584A1 (en) | Semiconductor integrated circuit | |
US6836175B2 (en) | Semiconductor integrated circuit with sleep memory | |
US6965261B2 (en) | Ultra low-power data retention latch | |
US20040196082A1 (en) | Circuit arrangement | |
US7420403B2 (en) | Latch circuit and flip-flop | |
KR100446303B1 (en) | Clocked-scan flip-flop for multi-threshold voltage CMOS circuit | |
JP5627163B2 (en) | Data holding method and circuit in operation mode and sleep mode | |
US7164293B2 (en) | Dynamic latch having integral logic function and method therefor | |
US7224197B2 (en) | Flip-flop implemented with metal-oxide semiconductors using a single low-voltage power supply and control method thereof | |
CN116206660A (en) | Register |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: FREESCALE SEMICONDUCTOR, INC., TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HOOVER, ANDREW P.;MILLAR, BRIAN M.;PADHYE, MILIND P.;REEL/FRAME:016475/0270;SIGNING DATES FROM 20050325 TO 20050401 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: CITIBANK, N.A. AS COLLATERAL AGENT, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:FREESCALE SEMICONDUCTOR, INC.;FREESCALE ACQUISITION CORPORATION;FREESCALE ACQUISITION HOLDINGS CORP.;AND OTHERS;REEL/FRAME:018855/0129 Effective date: 20061201 Owner name: CITIBANK, N.A. AS COLLATERAL AGENT,NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:FREESCALE SEMICONDUCTOR, INC.;FREESCALE ACQUISITION CORPORATION;FREESCALE ACQUISITION HOLDINGS CORP.;AND OTHERS;REEL/FRAME:018855/0129 Effective date: 20061201 Owner name: CITIBANK, N.A. AS COLLATERAL AGENT, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:FREESCALE SEMICONDUCTOR, INC.;FREESCALE ACQUISITION CORPORATION;FREESCALE ACQUISITION HOLDINGS CORP.;AND OTHERS;REEL/FRAME:018855/0129D Effective date: 20061201 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: CITIBANK, N.A., AS COLLATERAL AGENT,NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:024397/0001 Effective date: 20100413 Owner name: CITIBANK, N.A., AS COLLATERAL AGENT, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:024397/0001 Effective date: 20100413 |
|
AS | Assignment |
Owner name: CITIBANK, N.A., AS NOTES COLLATERAL AGENT, NEW YOR Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:030633/0424 Effective date: 20130521 |
|
AS | Assignment |
Owner name: CITIBANK, N.A., AS NOTES COLLATERAL AGENT, NEW YOR Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:031591/0266 Effective date: 20131101 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
AS | Assignment |
Owner name: FREESCALE SEMICONDUCTOR, INC., TEXAS Free format text: PATENT RELEASE;ASSIGNOR:CITIBANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:037354/0225 Effective date: 20151207 Owner name: FREESCALE SEMICONDUCTOR, INC., TEXAS Free format text: PATENT RELEASE;ASSIGNOR:CITIBANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:037356/0553 Effective date: 20151207 Owner name: FREESCALE SEMICONDUCTOR, INC., TEXAS Free format text: PATENT RELEASE;ASSIGNOR:CITIBANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:037356/0143 Effective date: 20151207 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., MARYLAND Free format text: ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS;ASSIGNOR:CITIBANK, N.A.;REEL/FRAME:037486/0517 Effective date: 20151207 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., MARYLAND Free format text: ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS;ASSIGNOR:CITIBANK, N.A.;REEL/FRAME:037518/0292 Effective date: 20151207 |
|
AS | Assignment |
Owner name: NORTH STAR INNOVATIONS INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:037694/0264 Effective date: 20151002 |
|
AS | Assignment |
Owner name: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC., NETHERLANDS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:040925/0001 Effective date: 20160912 Owner name: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC., NE Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:040925/0001 Effective date: 20160912 |
|
AS | Assignment |
Owner name: NXP B.V., NETHERLANDS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:040928/0001 Effective date: 20160622 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., MARYLAND Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS;ASSIGNOR:CITIBANK, N.A.;REEL/FRAME:041703/0536 Effective date: 20151207 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553) Year of fee payment: 12 |
|
AS | Assignment |
Owner name: SHENZHEN XINGUODU TECHNOLOGY CO., LTD., CHINA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITYINTEREST IN PATENTS.;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:048734/0001 Effective date: 20190217 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., MARYLAND Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITYINTEREST IN PATENTS;ASSIGNOR:CITIBANK, N.A.;REEL/FRAME:053547/0421 Effective date: 20151207 |
|
AS | Assignment |
Owner name: NXP B.V., NETHERLANDS Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVEAPPLICATION 11759915 AND REPLACE IT WITH APPLICATION11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITYINTEREST;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:052915/0001 Effective date: 20160622 |
|
AS | Assignment |
Owner name: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC., NETHERLANDS Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVEAPPLICATION 11759915 AND REPLACE IT WITH APPLICATION11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITYINTEREST;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC.;REEL/FRAME:052917/0001 Effective date: 20160912 |