US20060175294A1 - Chemical mechanical polishing method and apparatus - Google Patents
Chemical mechanical polishing method and apparatus Download PDFInfo
- Publication number
- US20060175294A1 US20060175294A1 US11/327,903 US32790306A US2006175294A1 US 20060175294 A1 US20060175294 A1 US 20060175294A1 US 32790306 A US32790306 A US 32790306A US 2006175294 A1 US2006175294 A1 US 2006175294A1
- Authority
- US
- United States
- Prior art keywords
- polishing
- wafer
- slurry channels
- edge
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000126 substance Substances 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000007517 polishing process Methods 0.000 claims abstract description 6
- 239000002002 slurry Substances 0.000 claims description 17
- 238000012876 topography Methods 0.000 abstract description 5
- 239000013077 target material Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- This invention relates to semiconductor processing, particularly to a chemical mechanical polishing method and apparatus with which to achieve superior global and local wafer planarity control.
- Modern integrated-circuit technology is capable of packing a large number of circuit-components at near the surface of a semiconductor wafer by scaling down the feature size of the circuit-components and connects the components with a large number of metal lines imbedded in a matrix of multiple layers of metal and dielectric material. Beneath the silicon wafer surface, the circuit-elements are isolated from each other by regions of silicon dioxide in shallow trenches to prevent unwanted electrical current passage between the circuit-elements.
- a semiconductor wafer is mounted upside down on a wafer-carrier, and the carrier is pressed downward against a polishing pad, which is motion with respect to the rotating wafer-carrier.
- Slurry comprised of silica or cerium oxide particles, for example, suspended in alkaline to slightly acid solution drips onto the polishing pad that has flow channels machined to transport the slurry beneath the rotating wafer carrier where it polishes the wafer surface.
- FIG. 2 depicts a polishing pad with a flow-channel pattern of the present invention.
- FIG. 3 depicts a cross section of another semiconductor wafer.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A method for removing material from the surface of a semiconductor wafer with a chemical mechanical polishing process is described. The method uses a polishing pad on which a line-pattern of grooves is formed. The pattern comprises orderly spaced grooved-area and area without grooves. The method combines information of the surface topography of the wafer, the nature of the material to be removed, and the available groove pattern on the surface of the polishing pad to generate a process recipe in which the resident time of portions of the semiconductor wafer spends at the grooved and un-grooved areas of the polishing pad during the chemical mechanical polishing process is pre-determined.
Description
-
- This invention relates to semiconductor processing, particularly to a chemical mechanical polishing method and apparatus with which to achieve superior global and local wafer planarity control.
- Modern integrated-circuit technology is capable of packing a large number of circuit-components at near the surface of a semiconductor wafer by scaling down the feature size of the circuit-components and connects the components with a large number of metal lines imbedded in a matrix of multiple layers of metal and dielectric material. Beneath the silicon wafer surface, the circuit-elements are isolated from each other by regions of silicon dioxide in shallow trenches to prevent unwanted electrical current passage between the circuit-elements.
- Because of the downward scaling of the feature size and the increasing complexity of interconnecting scheme, the wafer process requires a high degree of wafer surface planarization. Specifically, the wafer surface must be planarized locally as well as globally after the formation of the shallow trenches and at all interconnect levels. Currently the technique of chemical mechanical polishing is the only satisfactory technique with which the necessary degree of planarization can be achieved.
- In a chemical mechanical polishing operation, a semiconductor wafer is mounted upside down on a wafer-carrier, and the carrier is pressed downward against a polishing pad, which is motion with respect to the rotating wafer-carrier. Slurry comprised of silica or cerium oxide particles, for example, suspended in alkaline to slightly acid solution drips onto the polishing pad that has flow channels machined to transport the slurry beneath the rotating wafer carrier where it polishes the wafer surface.
- The most popular type of chemical mechanical polisher is the rotary polisher in which both a platen and the wafer-carrier rotate. The carrier holds the wafer face down, and applies a downward force against the surface of the pad. The pad is mounted on a rotating platen by waterproof adhesive. The wafer-carrier rotates about the center point of the wafer and it oscillates along a radius of the platen such that the entire wafer surface contacts the polishing pad during the polishing operation.
- Some types of the polishing pads are made of materials that absorb the slurry; other types are made of materials that do not have the ability to absorb the slurry.
- The rate of removal of the target material is a function of the pressure that the pad exerts on the wafer surface, the relative speed between the pad and the wafer surface, and the nature of the slurry.
-
FIG. 1 depicts a cross section of a semiconductor wafer. -
FIG. 2 depicts a polishing pad with a flow-channel pattern of the present invention. -
FIG. 3 depicts a cross section of another semiconductor wafer. -
FIG. 4 depicts another polishing pad with a flow-channel pattern of the present invention. -
FIG. 5 depicts a flowchart of a chemical mechanical polishing process of the present invention. - The applicants recognize that with today's rotary chemical mechanical polisher, different portions of the wafer experience different relative speed with respect to the polishing pad during the polishing operation. The applicants also recognize that different processes that deposit the target material on the wafer surface may effects different built-in non-planarity on the wafer surface. In certain instances, the target material coating on the wafer may be thicker at the center while in other instances the coating is thicker at the edges.
- The applicants further recognize that the rate of removing the target material depends on the presence of the slurry at the point where the wafer contacts the polishing pad. With a polishing pad made of material such as polyurethane, polycarbonate, nylon, acrylic polymer, or polyester, the slurry is transported to the contact point by the flow channels machined onto the polishing pad. Therefore, the rate of target material removal is a function of the dimension and density of the flow channels—a wafer gliding over an area on the polishing pad that has more densely placed flow channels will have more of the target material removed than over an area that has more sparsely placed flow channels.
- Therefore, the applicants discovered that with a properly designed flow-channel pattern, desired planarity can be achieved even when the surface topography of the target material as formed is highly non-planar. The following exemplary embodiments are for the purpose of describing this invention.
-
FIG. 1 depicts the cross-section view of asilicon wafer 10 with a deposited layer ofsilicon dioxide 20. The dioxide layer may be formed following the formation of shallow trench isolation. - In
FIG. 1 , thesilicon dioxide layer 20 is outwardly tapered—its thickness at the center of the wafer is greater than at the edge of the wafer. In order to compensate for this outward-tapering, it is advantageous to use a polishing pad that has a pattern of flow channels as depicted inFIG. 2 . -
FIG. 2 depicts apolishing pad 100, which may be made of material such as polyurethane.FIG. 2 also depicts two areas A and B of the polishing pad and the enlargements A′ and B′ of the two areas, and the flow channels in the areas. Note that the spacing between the flow channels in area A is ‘a’ and the spacing between the flow channels in area B is ‘b’. To polish an outwardly tapered wafer, the more favorable flow-channel pattern for polishing pad should be such that ‘a’ is wider than ‘b’—in some cases, area A may be free of any flow-channels. It is applicants' observation that during the polishing operation, the wafer and the wafer carrier oscillates along a line OP while rotating. As a result, the edge of the wafer travels along the edge of an ellipse E while the center portion of the wafer is confined in the interior of the ellipse E. A flow channel pattern such as depicted inFIG. 2 will achieve a polishing rate lower at the edge of the wafer because of the more sparsely spaced flow channels at the location A. -
FIG. 3 depicts the cross-section view of anothersilicon wafer 30 with a layer 40 coated on the top surface. In this case, the layer 40 is inwardly tapered so that it is thinner at the center than at the edge of the wafer.Layer 30 may be deposited on the silicon with a spin-on process. In order to compensate for inward-tapering, it is advantageous to use a polishing pad that has a pattern of flow channels as depicted inFIG. 4 . -
FIG. 4 depicts another polishing pad and two areas C and D on the polishing pad. Also depicted inFIG. 4 are the enlargements C′ and D′ of the two areas and the flow channels in the areas. The spacing between the flow channels in area C is ‘c’ and the spacing between the flow-channels in area D is ‘d’. To polish an inwardly-tapering wafer, the more favorable flow-channel pattern should be such that ‘d’ is wider than ‘c’—in some cases D may be free of any flow-channels. A polishing pad having a flow-channel pattern as depicted inFIG. 4 removes the target material more slowly at the center of the wafer because of the more sparsely spaced flow-channels. -
FIG. 5 is a flowchart for a chemical mechanical polishing process of the present invention. The process starts by providing a wafer having a coating of target material with a known surface topography to be polished 200. This topography may be ascertained by scanning the top surface of each wafer or by sample-scanning a representative wafer in a wafer-lot. As explained earlier, the topography of the coating is generally a function of how the coating is formed and the nature of the coating material. In case of a spin-on film such as a spin-on-glass, the film tends to be inwardly tapered as the spun-on material gets pushed outwardly by the centrifugal force of spinning operation to the edge of the wafer. In case of electro-plating, the location of the electrode and the current path in the wafer surface may cause the film to be outwardly tapered. - The next step is to select a polishing pad of a proper flow-
channel pattern 300. As explained in the previous paragraphs, for a given relative polishing speed, an area of denser flow-channel usually removes target material at a higher rate. - The next step is to provide a recipe for the
CMP operation 400. The recipe may include the rotational speed for the platen—polishing pad and the rotational speed for the wafer-carrier, the frequency of the wafer carrier oscillating along a radius of the platen, the slurry feeding rate, and endpoint detection data or a predetermined polishing time. - The next step is the
actual polishing 500 of the wafer according to therecipe 400. When the predetermined polishing time is reached or when the endpoint detection mechanism triggers, the CMP operation is terminated 600. - The present invention may be applied to semiconductor wafer other than silicon. For example, the CMP method is applicable on compound semiconductor material. It is applicable on SiGe material. The target film may comprise other material such as silicon, tungsten or copper. The flow-channel may be of more than one width and one depth.
Claims (11)
1-13. (canceled)
14. A method for removing a predetermined amount of a material from a surface of a semiconductor wafer, comprising the steps of:
a. providing a semiconductor wafer having a top surface and a substantially flat bottom surface, the top surface having a center portion and a edge portion;
b. providing a chemical-mechanical-polishing (CMP) apparatus including a polishing pad that has a polishing surface and a backing surface, the backing surface attaching to a platen, the polishing surface having a center point, an edge, and a plurality of regions radially distant from the center point and patterned with slurry channels of various densities;
c. providing a CMP recipe for polishing the top surface of the semiconductor wafer on the polishing surface such that the edge portion of the wafer comes in contact with each of the plurality of regions of the polishing surface;
d. commencing the polishing process based on the process recipe;
and
e. terminating the polishing process when the predetermined amount of material is removed from the top surface of the semiconductor wafer.
15. The method of claim 14 , in which a region on the polishing surface having a high density of slurry channels situates approximately half-way between the center point and the edge.
16. The method of claim 14 , in which a region on the polishing surface having a low density of slurry channels situates adjacent the center point.
17. The method of claim 16 , in which the region adjacent the center point has zero density of slurry channels.
18. The method of claim 14 , in which a region on the polishing surface having a low density of slurry channels situates adjacent the edge.
19. The method of claim 18 , in which the region adjacent the edge point has zero density of slurry channels.
20. The method of claim 14 , in which the slurry channels are con-centric rings.
21. The method of claim 14 , in which the slurry channels are spiral.
22. The method of claim 14 , in which the slurry channels are con-centric rings.
23. The method of claim 20 , in which the rings are evenly spaced in each region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/327,903 US20060175294A1 (en) | 2003-10-30 | 2006-01-09 | Chemical mechanical polishing method and apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/697,676 US7186651B2 (en) | 2003-10-30 | 2003-10-30 | Chemical mechanical polishing method and apparatus |
US11/327,903 US20060175294A1 (en) | 2003-10-30 | 2006-01-09 | Chemical mechanical polishing method and apparatus |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/697,676 Continuation US7186651B2 (en) | 2003-10-30 | 2003-10-30 | Chemical mechanical polishing method and apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060175294A1 true US20060175294A1 (en) | 2006-08-10 |
Family
ID=34550423
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/697,676 Expired - Lifetime US7186651B2 (en) | 2003-10-30 | 2003-10-30 | Chemical mechanical polishing method and apparatus |
US11/327,903 Abandoned US20060175294A1 (en) | 2003-10-30 | 2006-01-09 | Chemical mechanical polishing method and apparatus |
US11/551,793 Abandoned US20070050077A1 (en) | 2003-10-30 | 2006-10-23 | Chemical Mechanical Polishing Method and Apparatus |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/697,676 Expired - Lifetime US7186651B2 (en) | 2003-10-30 | 2003-10-30 | Chemical mechanical polishing method and apparatus |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US11/551,793 Abandoned US20070050077A1 (en) | 2003-10-30 | 2006-10-23 | Chemical Mechanical Polishing Method and Apparatus |
Country Status (1)
Country | Link |
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US (3) | US7186651B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180016288A (en) * | 2016-08-04 | 2018-02-14 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | Tapering method for poromeric polishing pad |
US9925637B2 (en) | 2016-08-04 | 2018-03-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapered poromeric polishing pad |
US10106662B2 (en) | 2016-08-04 | 2018-10-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Thermoplastic poromeric polishing pad |
US10688621B2 (en) | 2016-08-04 | 2020-06-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low-defect-porous polishing pad |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7186651B2 (en) | 2003-10-30 | 2007-03-06 | Texas Instruments Incorporated | Chemical mechanical polishing method and apparatus |
TWI321503B (en) * | 2007-06-15 | 2010-03-11 | Univ Nat Taiwan Science Tech | The analytical method of the effective polishing frequency and number of times towards the polishing pads having different grooves and profiles |
US9387565B2 (en) * | 2011-12-13 | 2016-07-12 | Alderson (Nz) Limited | Abrasive apparatus and components thereof |
Citations (11)
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US4728552A (en) * | 1984-07-06 | 1988-03-01 | Rodel, Inc. | Substrate containing fibers of predetermined orientation and process of making the same |
US4841680A (en) * | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
US4927432A (en) * | 1986-03-25 | 1990-05-22 | Rodel, Inc. | Pad material for grinding, lapping and polishing |
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
US5257478A (en) * | 1990-03-22 | 1993-11-02 | Rodel, Inc. | Apparatus for interlayer planarization of semiconductor material |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5578362A (en) * | 1992-08-19 | 1996-11-26 | Rodel, Inc. | Polymeric polishing pad containing hollow polymeric microelements |
US5605760A (en) * | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
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US6863774B2 (en) * | 2001-03-08 | 2005-03-08 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
US6910947B2 (en) * | 2001-06-19 | 2005-06-28 | Applied Materials, Inc. | Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life |
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US5700180A (en) * | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
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US5394655A (en) * | 1993-08-31 | 1995-03-07 | Texas Instruments Incorporated | Semiconductor polishing pad |
JP3724869B2 (en) * | 1995-10-09 | 2005-12-07 | 株式会社荏原製作所 | Polishing apparatus and method |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6736709B1 (en) * | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
US6612916B2 (en) * | 2001-01-08 | 2003-09-02 | 3M Innovative Properties Company | Article suitable for chemical mechanical planarization processes |
US7186651B2 (en) | 2003-10-30 | 2007-03-06 | Texas Instruments Incorporated | Chemical mechanical polishing method and apparatus |
-
2003
- 2003-10-30 US US10/697,676 patent/US7186651B2/en not_active Expired - Lifetime
-
2006
- 2006-01-09 US US11/327,903 patent/US20060175294A1/en not_active Abandoned
- 2006-10-23 US US11/551,793 patent/US20070050077A1/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4728552A (en) * | 1984-07-06 | 1988-03-01 | Rodel, Inc. | Substrate containing fibers of predetermined orientation and process of making the same |
US4927432A (en) * | 1986-03-25 | 1990-05-22 | Rodel, Inc. | Pad material for grinding, lapping and polishing |
US4841680A (en) * | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
US5257478A (en) * | 1990-03-22 | 1993-11-02 | Rodel, Inc. | Apparatus for interlayer planarization of semiconductor material |
US5578362A (en) * | 1992-08-19 | 1996-11-26 | Rodel, Inc. | Polymeric polishing pad containing hollow polymeric microelements |
US5900164A (en) * | 1992-08-19 | 1999-05-04 | Rodel, Inc. | Method for planarizing a semiconductor device surface with polymeric pad containing hollow polymeric microelements |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5605760A (en) * | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US6113462A (en) * | 1997-12-18 | 2000-09-05 | Advanced Micro Devices, Inc. | Feedback loop for selective conditioning of chemical mechanical polishing pad |
US6863774B2 (en) * | 2001-03-08 | 2005-03-08 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
US6910947B2 (en) * | 2001-06-19 | 2005-06-28 | Applied Materials, Inc. | Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180016288A (en) * | 2016-08-04 | 2018-02-14 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | Tapering method for poromeric polishing pad |
US9925637B2 (en) | 2016-08-04 | 2018-03-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapered poromeric polishing pad |
US10106662B2 (en) | 2016-08-04 | 2018-10-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Thermoplastic poromeric polishing pad |
US10259099B2 (en) | 2016-08-04 | 2019-04-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapering method for poromeric polishing pad |
US10688621B2 (en) | 2016-08-04 | 2020-06-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low-defect-porous polishing pad |
KR102301910B1 (en) | 2016-08-04 | 2021-09-15 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | Tapering method for poromeric polishing pad |
Also Published As
Publication number | Publication date |
---|---|
US7186651B2 (en) | 2007-03-06 |
US20070050077A1 (en) | 2007-03-01 |
US20050095863A1 (en) | 2005-05-05 |
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