US20060147337A1 - Solder composition - Google Patents

Solder composition Download PDF

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US20060147337A1
US20060147337A1 US10/802,387 US80238704A US2006147337A1 US 20060147337 A1 US20060147337 A1 US 20060147337A1 US 80238704 A US80238704 A US 80238704A US 2006147337 A1 US2006147337 A1 US 2006147337A1
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weight
solder composition
solder
silver
tin
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US10/802,387
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Premakaran Boaz
John Pereira
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Antaya Technologies Corp
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Antaya Technologies Corp
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Priority claimed from US10/744,326 external-priority patent/US20050069725A1/en
Application filed by Antaya Technologies Corp filed Critical Antaya Technologies Corp
Priority to US10/802,387 priority Critical patent/US20060147337A1/en
Assigned to ANTAYA TECHNOLOGIES CORPORATION reassignment ANTAYA TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PEREIRA, JOHN
Assigned to ANTAYA TECHNOLOGIES CORPORAITON reassignment ANTAYA TECHNOLOGIES CORPORAITON ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BOAZ, PREM (PREMAKARAN) T.
Publication of US20060147337A1 publication Critical patent/US20060147337A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29211—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/2936—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0212—Resin particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06—Thermal details
    • H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The present invention relates to a lead-free solder composition having a low coefficient of thermal expansion to reduce the likelihood of thermal shock to a glass substrate. The solder composition includes a granular material added to lead-free solder where the granular material may include fused silica, zirconium oxide, Invar®, or any wettable, lead-free alloy such as 36% weight nickel or 64% weight iron and the solder may include tin, silver and bismuth. When a component is soldered to a glass substrate by the present invention and exposed to a substantial change in climatic temperature the granular material counteracts and adsorbs the stress caused by contraction of the solder, thereby preventing thermal shock to the glass substrate.

Description

    BACKGROUND
  • Generally speaking, solder is a material used to provide connections either between various items or to secure an item to a substrate. Solder is used in several technical fields, such as electrical, mechanical, or thermal; however, the specific composition of solder or type of solder alloy varies widely between technical fields and even within a given field, depending on the application. Traditionally, solder largely consisted of lead as a result of its physical and chemical characteristics (i.e., wettability, melting point, rate of thermal expansion, etc.); however, lead solder became known as a source of environmental pollution and federal legislation mandated a reduction in the content of lead in solder.
  • As a result, lead-free solder was introduced into various technical fields and is currently used for numerous applications without issue. As disclosed in U.S. Pat. Nos. 5,066,544; 5,918,795; and 6,371,361, lead-free solder or reduced lead content solder is successfully applied to soldering electronic components in both the microelectronic and conventional electronic fields.
  • However, there exist other technical fields where the aforementioned lead free solders are deficient. Within the technical field of soldering onto a substrate, such as an automobile window or windshield, known lead-free solders are less desirable because they contain alloy compositions which possess a coefficient of thermal expansion nearly twice that of a glass substrate. As a result, the solder can separate from and/or crack the glass substrate during a substantial change in climatic temperature. This situation is known as thermal shock.
  • U.S. Pat. No. 6,319,461, issued to Domi et al. discloses a lead free solder for soldering to a ceramic or glass substrate to resist thermal shock. The Domi et al. invention includes titanium as its essential component in combating thermal shock; however, the price and properties of titanium when included in a solder give rise to concerns over cost and workability of the solder at certain temperatures. As a result, the titanium laden Domi et al. solder composition is restricted to a liquids temperature not greater than 400° C.
  • A need exists in the art for a cost-effective, workable, lead-free solder composition suitable for use on a glass substrate having a low coefficient of thermal expansion to reduce the likelihood of thermal shock to a glass substrate.
    • SUMMARY
  • The present invention has been developed to overcome many limitations and disadvantages of known lead-free solders, and to generally fulfill a need in the art for a lead-free solder composition having a low coefficient of thermal expansion to reduce the likelihood of thermal shock to a glass substrate.
  • The present invention provides a lead-free solder composition for soldering to a glass substrate, wherein the solder composition includes tin (Sn) and silver (Ag) as well as a granular additive material having a low coefficient of thermal expansion to combat thermal shock and the percent weight of the solder and granular additive are at least 97% and at least 3%, respectively.
  • The solder composition of the present invention can further include bismuth (Bi) wherein the percent weight of the solder, including bismuth, is between 61% and 39% tin (Sn), between 1%-3% silver (Ag) and between 59% and 37% bismuth (Bi).
  • The granular additive of the present invention can be fused silica (SiO2) or Invar®, encapsulated in a lead-free, wettable, metal alloy such as copper (Cu), nickel (Ni) or silver (Ag). The granular additive may also be 36%±1% weight nickel (Ni) alloy or 64%±1% weight iron (Fe) alloy.
  • It is an object of the present invention to provide a lead-free solder composition which is cost effective, easy to manufacture, and easy to apply to a substrate.
  • It is another object of the present invention to provide a lead-free solder composition whose percent weight between solder and granular additive can be adjusted to coincide with the coefficient of thermal expansion of the substrate to which the solder is to be secured.
  • It is still another object of the present invention to be capable of use in connection with a layer of indium to promote greater adhesion to a substrate.
  • The present invention also includes a solder composition including a mixture of elements having tin (Sn) and silver (Ag). A granular additive is also included which can be at least about 3% of the solder composition by weight. The granular additive can be a nickel iron alloy which includes about 36% nickel (Ni) and about 64% iron (Fe) by weight.
  • In particular embodiments, the granular additive can be pretreated with flux. The flux can include zinc chloride, ammonium chloride and hydrochloric acid. The mixture of elements can include by weight about 95%-97% tin (Sn) and about 5%-3% silver (Ag). The mixture of elements can further include bismuth, in which the mixture of elements can include by weight about 61%-39% tin (Sn), about 59%-37% bismuth (Bi) and about 1%-3% silver (Ag).
  • In some embodiments, the granular additive can be about 30% of the solder composition by weight. In one such solder composition, the mixture of elements can include by weight about 95% tin (Sn) and about 5% silver (Ag). In another such solder composition, the mixture of elements can include by weight about 75% tin (Sn), about 23% bismuth (Bi) and about 2% silver (Ag).
  • In other embodiments, the granular additive can be about 20% of the solder composition by weight. In one such embodiment, the mixture of elements can include by weight about 62% tin (Sn), about 36% bismuth (Bi) and about 2% silver (Ag). In another such embodiment, the mixture of elements can include by weight about 72% tin (Sn), about 26% bismuth (Bi) and about 2% silver (Ag). In yet another such embodiment, the mixture of elements can include by weight about 78% tin (Sn), about 20% bismuth (Bi) and about 2% silver (Ag). In still another such embodiment, the mixture of elements can include by weight about 83% tin (Sn), about 15% bismuth (Bi) and about 2% silver (Ag). In a further such embodiment, the mixture of elements can include by weight about 88% tin (Sn), about 10% bismuth (Bi) and about 2% silver (Ag).
  • The present invention also includes a solder composition including a mixture of elements including tin and silver. A granular additive is also included and includes a material having a low coefficient of thermal expansion and can be at least about 3% of the solder composition by weight.
  • In particular embodiments, the granular additive can include iron, and can also include iron and nickel. In addition, the granular additive can be pretreated with flux which can include zinc chloride, ammonium chloride and hydrochloric acid.
  • The present invention also includes a method of forming a solder composition. A molten mixture of elements having tin and silver is formed. A granular additive is added to the molten mixture of elements. The granular additive can be at least about 3% of the solder composition by weight. The granular additive can be a nickel iron alloy which includes about 36% nickel (Ni) and about 64% iron (Fe) by weight.
  • In particular embodiments, the granular additive can be pretreated with flux before adding the granular additive to the molten mixture of elements.
  • The present invention also includes a method of forming a solder composition including forming a molten mixture of elements having tin and silver. A granular additive is added to the molten mixture of elements. The granular additive includes a material with a low coefficient of thermal expansion and can be at least about 3% of the solder composition by weight.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The foregoing and other objects, features and advantages of the invention will be apparent from the following more particular description of particular embodiments of the invention, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
  • FIG. 1 is an assembly of a solder composition on a hardware component in accordance with an embodiment of the invention before melt.
  • FIG. 2 is an assembly of the solder composition secured to a hardware component and a substrate in accordance with an embodiment of the invention and including an enhanced bonding sub layer of Indium after melt.
    • DETAILED DESCRIPTION
  • Referring to FIGS. 1 and 2, an embodiment of a solder composition is shown generally at 10 on a hardware component 20, such as a copper terminal, and a substrate 30. The solder composition 10 includes solder 12 and a granular additive 14 having a low coefficient of thermal expansion. The solder 12 includes tin and silver with a percent composition by weight of 95-97% tin (Sn) and between 5-3% silver (Ag). Additionally, the solder 12 may also include bismuth (Bi), wherein said percent composition by weight of the three components is 61-39% tin (Sn), 1-3% silver (Ag) and 59-37% bismuth (Bi).
  • As an alternative embodiment, for securing the solder to a glass substrate, the glass substrate may be coated with a layer of indium 46, approximately 50 microns thick, to improve bonding the hardware 20 to the substrate 30.
  • Further referring to FIGS. 1-2, the granular additive 14 with a low coefficient of thermal expansion is added to the solder 12. The granular additive 14 may be any wettable material having a low coefficient of thermal expansion such as fused silica, zirconium oxide, Invar®, or an alloy of 36% weight nickel (Ni) or 64% weight iron (Fe). To improve wettability of the fused silica, it may be encapsulated in a metal such as copper, nickel, or silver. The size of the granular material 14 may range from 5 to 400 microns; however, particles ranging from 10 to 250 microns are preferred.
  • The percent weight of the solder 12 and granular material 14 for the solder composition 10 can be contingent upon the coefficient of thermal expansion of the substrate 30. By way of example, when using fused silica as the granular material 14, the percent weight of the solder composition 10 is at least 97% solder 12 and at least 3% granular material 14 to secure the solder composition 10 (and included hardware 20) to a glass substrate 30 having a coefficient of thermal expansion of 85×10−7.
  • Referring specifically to FIG. 2, the solder composition 10 is placed on the hardware 20 and secured to the substrate 30 by conventional means, i.e., applying heat to melt the solder 12 and attach the hardware 20 to the substrate 30, thereby trapping the granular material 14 between the hardware 20 and the substrate 30. When the joined hardware 20 and substrate 30 are exposed to low climatic temperatures, the solder 12 can attempt to contract at a rate higher than that of the substrate 30; however, the trapped granular material 14 will prevent the high contraction rate of the solder 12 and adsorb the stress created by same, causing the substrate 30 to receive little or no stress from the contraction, thereby preventing thermal shock. If a layer of indium 46 (FIG. 1) is employed, a region 46 a having a mixture of solder 12 and indium can be formed when melted.
  • In one embodiment, when preparing a solder composition 10 including granular Invar® as the granular additive 14, the mixture of elements of solder 12 can be first brought into a molten state. Flux is added to the granular Invar® and then the Invar® is mixed into the solder 12 to form the solder composition 10. The Invar®/flux mixture can be added to the solder 12 while wet or can be predried to reduce splattering. The flux pre-treats the Invar® and allows the Invar® to easily wet with the solder 12. The flux can be in liquid form and can contain for example, zinc chloride, ammonium chloride, and hydrochloric acid. When flux is used, encapsulation of the Invar® granules by another metal is not necessary. Once mixed, the solder composition 10 can then be formed or cast into desired shapes.
  • The Invar® granules are typically spheres of an alloy that has about 36% nickel (Ni) by weight and about 64% iron (Fe) by weight. In one embodiment, the Invar® can have a particle size ranging from 50-140 microns. If desired, the Invar® with such a size can be sifted to remove particles below 100 microns so that particles having a size between about 100-140 microns can be added to the solder 12. The Invar® can in some embodiments be 20%-30% of the solder composition 10 by weight, with the mixture of the elements of the solder 12 being the remaining 70%-80% of the solder composition 10 by weight.
  • In addition to the composition ranges previously described for the solder composition 10, the Applicants have found particular solder compositions 10 that are suitable for soldering to glass. For example, in one solder composition 10, the solder 12 can be about 95% tin (Sn) and about 5% silver (Ag) by weight. In this solder composition 10, the 95Sn 5Ag solder 12 makes up about 70% of the weight of the solder composition 10 and the added Invar® makes up about 30%.
  • In another solder composition 10, the solder 12 can be about 75% tin (Sn), about 23% bismuth (Bi) and about 2% silver (Ag) by weight. In this solder composition 10, the 75Sn 23Bi 2Ag solder 12 makes up about 70% of the weight of the resulting solder composition 10 and the Invar® makes up about 30%.
  • In yet another solder composition 10, the solder 12 can be about 62% tin (Sn), about 36% bismuth (Bi) and about 2% silver (Ag) by weight. In this solder composition 10, the 62Sn 36Bi 2Ag solder 12 makes about 80% of the weight of the solder composition 10 and the added Invar® makes up about 20%.
  • In still another solder composition 10, the solder 12 can be about 72% tin (Sn), about 26% bismuth (Bi) and about 2% silver (Ag) by weight. In this solder composition 10, the 72Sn 26Bi 2Ag solder 12 makes up about 80% of the weight of the solder composition 10 and the Invar® makes up about 20%.
  • In a further solder composition 10, the solder 12 can be about 78% tin (Sn), about 20% bismuth (Bi) and about 2% silver (Ag) by weight. In this solder composition 10, the 78Sn 20Bi 2Ag solder 12 makes up about 80% of the weight of the solder composition 10 and the Invar® makes up about 20%.
  • In yet a further solder composition 10, the solder 12 can be about 83% tin (Sn), about 15% bismuth (Bi) and about 2% silver (Ag) by weight. In this solder composition 10, the 83Sn 15Bi 2Ag solder 12 makes up about 80% of the weight of the solder composition 10 and the Invar® makes up about 20%.
  • In still a further solder composition 10, the solder 12 can be about 88% tin (Sn), about 10% bismuth (Bi) and about 2% silver (Ag) by weight. In this solder composition 10, the 88Sn 10Bi 2Ag solder 12 makes up about 80% of the weight of the solder composition 10 and the Invar® makes up about 20%.
  • While this invention has been particularly shown and described with references to particular embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims. For example, although the solder composition 10 is suitable for use on glass, solder composition 10 can be used on other substrates and in other fields. In addition, although the solder composition 10 has been described as being melted by applying heat, in some embodiments, the solder composition 10 can be used for spin soldering where friction generated by a spinning electrical terminal against a substrate heats and melts the solder composition 10 therebetween.

Claims (40)

1. A solder composition comprising:
a mixture of elements comprising tin (Sn) and silver (Ag); and
a granular additive which is at least about 3% of the solder composition by weight, the granular additive comprising a nickel iron alloy comprising about 36% nickel (Ni) and about 64% iron (Fe), by weight.
2. The solder composition of claim 1 in which the granular additive is pretreated with flux.
3. The solder composition of claim 2 in which the flux comprises zinc chloride, ammonium chloride and hydrochloric acid.
4. The solder composition of claim 1 in which the mixture of elements comprises by weight about 95%-97% tin (Sn) and about 5%-3% silver (Ag).
5. The solder composition of claim 1 in which the mixture of elements further comprises bismuth (Bi).
6. The solder composition of claim 5 in which the mixture of elements comprises by weight about 61%-39% tin (Sb), about 59%-37% bismuth (Bi), and about 1%-3% silver (Ag).
7. The solder composition of claim 1 in which the granular additive is about 30% of the solder composition by weight.
8. The solder composition of claim 7, in which the mixture of elements comprises by weight about 95% tin (Sn), and about 5% silver (Ag).
9. The solder composition of claim 7 in which the mixture of elements comprises by weight about 75% tin (Sn), about 23% bismuth (Bi) and about 2% silver (Ag).
10. The solder composition of claim 1 in which the granular additive is about 20% of the solder composition by weight.
11. The solder composition of claim 10 in which the mixture of elements comprises by weight about 62% tin (Sn), about 36% bismuth (Bi) and about 2% silver (Ag).
12. The solder composition of claim 10 in which the mixture of elements comprises by weight about 72% tin (Sn), about 26% bismuth (Bi) and about 2% silver (Ag).
13. The solder composition of claim 10 in which the mixture of elements comprises by weight about 78% tin (Sn), about 20% bismuth (Bi) and about 2% silver (Ag).
14. The solder composition of claim 10 in which the mixture of elements comprises by weight about 83% tin (Sn), about 15% bismuth (Bi) and about 2% silver (Ag).
15. The solder composition of claim 10 in which the mixture of elements comprises by weight about 88% tin (Sn), about 10% bismuth (Bi) and about 2% silver (Ag).
16. A solder composition comprising:
a mixture of elements comprising tin and silver; and
a granular additive comprising a material having a low coefficient of thermal expansion and being at least about 3% of the solder composition by weight.
17. The solder composition of claim 16 in which the granular additive comprises iron.
18. The solder composition of claim 16 in which the granular additive comprises iron and nickel.
19. The solder composition of claim 16 in which the granular additive is pretreated with flux.
20. The solder composition of claim 19 in which the flux comprises zinc chloride, ammonium chloride and hydrochloric acid.
21. A method of forming a solder composition comprising:
forming a molten mixture of elements comprising tin and silver; and
adding a granular additive to the molten mixture of elements, the granular additive being at least about 3% of the solder composition by weight, the granular additive comprising a nickel iron alloy comprising about 36% nickel (Ni) and about 64% iron (Fe), by weight.
22. The method of claim 21 further comprising pretreating the granular additive with flux before adding the granular additive to the molten mixture of elements.
23. The method of claim 22 further comprising pretreating the granular additive with flux comprising zinc chloride, ammonium chloride and hydrochloric acid.
24. The method of claim 21 further comprising forming the molten mixture of elements to comprise by weight about 95%-97% tin (Sn) and about 5%-3% silver (Ag).
25. The method of claim 21 further comprising including bismuth in the molten mixture of elements.
26. The method of claim 25 further comprising forming the molten mixture of elements to comprise by weight about 61%-39% tin (Sn), about 59%-37% bismuth (Bi), and about 1%-3% silver (Ag).
27. The method of claim 21 further comprising adding an amount of the granular additive to comprise about 30% of the solder composition by weight.
28. The method of claim 27 further comprising forming the molten mixture of elements to comprise by weight about 95% tin (Sn) and about 5% silver (Ag).
29. The method of claim 27 further comprising forming the molten mixture of elements to comprise by weight about 75% tin (Sn), about 23% bismuth and about 2% silver.
30. The method of claim 21 further comprising adding an amount of the granular additive to comprise about 20% of the solder composition by weight.
31. The method of claim 30 further comprising forming the molten mixture of elements to comprise by weight about 62% tin (Sn), about 36% bismuth (Bi) and about 2% silver (Ag).
32. The method of claim 30 further comprising forming the molten mixture of elements to comprise by weight about 72% tin (Sn), about 26% bismuth (Bi) and about 2% silver (Ag).
33. The method of claim 30 further comprising forming the molten mixture of elements to comprise by weight about 78% tin (Sn), about 20% bismuth (Bi) and about 2% silver (Ag).
34. The method of claim 30 further comprising forming the molten mixture of elements to comprise by weight about 83% tin (Sn), about 15% bismuth (Bi) and about 2% silver (Ag).
35. The method of claim 30 further comprising forming the molten mixture of elements to comprise by weight about 88% tin (Sn), about 10% bismuth (Bi) and about 2% silver (Ag).
36. A method of forming a solder composition comprising:
forming a molten mixture of elements comprising tin and silver; and
adding a granular additive to the molten mixture of elements, the granular additive comprising a material with a low coefficient of thermal expansion and being at least about 3% of the solder composition by weight.
37. The method of claim 36 further comprising adding a granular additive comprising iron.
38. The method of claim 36 further comprising adding a granular additive comprising iron and nickel.
39. The method of claim 36 further comprising pretreating the granular additive with flux before adding the granular additive to the melting mixture of elements.
40. The method of claim 39 further comprising pretreating the granular additive with flux comprising zinc chloride, ammonium chloride and hydrochloric acid.
US10/802,387 2003-07-03 2004-03-17 Solder composition Abandoned US20060147337A1 (en)

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WO2014029576A1 (en) 2012-08-24 2014-02-27 Saint-Gobain Glass France Pane having an electrical connection element
CN104476006A (en) * 2014-11-18 2015-04-01 南京航空航天大学 Submerged-arc welding high-moisture oxidation-resistant lead-free solder and preparation method thereof
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CN104476006A (en) * 2014-11-18 2015-04-01 南京航空航天大学 Submerged-arc welding high-moisture oxidation-resistant lead-free solder and preparation method thereof
TWI788243B (en) * 2021-03-31 2022-12-21 日商千住金屬工業股份有限公司 Preform solder, method of producing the same and method of producing solder joint

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