US20060141909A1 - Chemical mechanical polishing apparatus - Google Patents
Chemical mechanical polishing apparatus Download PDFInfo
- Publication number
- US20060141909A1 US20060141909A1 US11/282,759 US28275905A US2006141909A1 US 20060141909 A1 US20060141909 A1 US 20060141909A1 US 28275905 A US28275905 A US 28275905A US 2006141909 A1 US2006141909 A1 US 2006141909A1
- Authority
- US
- United States
- Prior art keywords
- wafer
- buffer
- ring
- slurry
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
- This application claims priority to and the benefit of Korean Patent Application No. 10-2004-0111050 filed in the Korean Intellectual Property Office on Dec. 23, 2004, the entire contents of which are incorporated herein by reference.
- (a) Field of the Invention
- The present invention relates to a chemical mechanical polishing (CMP) apparatus, and more particularly to a chemical mechanical polishing apparatus for polishing a surface of a wafer using mechanical friction as well as a chemical polishing agent.
- (b) Description of the Related Art
- Recently, as design rules of semiconductor devices have been reduced, line widths of wires have also been getting smaller. Therefore, a dual damascene process has been developed to form wires with the use of copper which has low resistance (Rs).
- According to the dual damascene process, a via and a metal line are typically formed in the following process. That is, a dual damascene pattern is firstly formed by etching an insulating layer on a semiconductor substrate according to a via-first or trench-first scheme. A conductive material such as copper, etc., is then filled in the dual damascene pattern. Next, the via and the metal line are finalized by removing a portion of the conductive material outside the via and trench using a chemical mechanical polishing (referred to as “CMP” below) process.
- The CMP process is a process for polishing a surface of a wafer coated with tungsten, an oxide, etc., by using mechanical friction as well as a chemical polishing agent. Mechanical polishing is a process for polishing a surface of a wafer using friction between a polishing pad and the surface of the wafer by rotating the wafer when it is fixed on a rotating polishing head, with the wafer pressed against the polishing pad. In addition, chemical polishing is a process used to polish a surface of a wafer using a slurry supplied between a polishing pad and the wafer as a chemical polishing agent.
- According to such a CMP process, excellent planarity may be obtained in wide regions (e.g., regions where device features may be relatively widely spaced apart) as well as narrow regions (e.g., regions where device features may be relatively close together). Accordingly, the CMP process is particularly adapted to the trend toward increasing wafer diameter.
- Hereinafter, a conventional CMP apparatus will be described in detail with reference to
FIG. 1 . - As shown in
FIG. 1 , a conventional CMP apparatus for performing the CMP process includes apolishing pad 102 which is rotating or fixed, and apolishing head 104 which has atop ring 104a used for fixedly holding a wafer W. In addition, a slurry supply nozzle (not shown) is installed in an upper part of thepolishing pad 102 in order to supply aslurry 106 to thepolishing pad 102. - When a copper layer filling a dual damascene pattern formed on a wafer is planarized by such a CMP apparatus, the polishing
head 104 effectively polishes the wafer W by pressing the wafer W against the polishing pad while the slurry is supplied to thepolishing pad 102 through the supply nozzle. - However, according to the CMP apparatus, when a wafer W is polished as the polishing
head 104 proceeds in the arrow direction, theslurry 106 is accumulated in front of the wafer W because theslurry 106 is pushed by the wafer W toward the moving direction of the polishinghead 104. Therefore in this case, the amount of theslurry 106 is locally increased. - When the amount of the
slurry 106 is locally increased, an eddy of the slurry is created in front of the wafer W by the rotational and translational movements of the wafer W. In this case, the wafer W makes more contact with theslurry 106, and accordingly, the copper layer around an edge of the wafer W may become “dented” (e.g., locally overpolished, or removed to a greater degree, around the wafer edge) by a chemical reaction of theslurry 106. - Therefore, a process defect, such as a “black belt,” can be generated in the edge bead removal (EBR) zone of the wafer W when the CMP process is finished, and such defect may result in a short-circuit of the copper wiring thereby deteriorating a yield of a device.
- The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention, and therefore, it may contain information that does not form prior art or other information that is already known in this or any other country to a person of ordinary skill in the art.
- The present invention has been made in an effort to provide a CMP apparatus having advantages of reducing and/or preventing a “black belt” phenomenon caused by an eddy (or local accumulation) of a CMP slurry.
- An exemplary CMP apparatus according to an embodiment of the present invention includes a polishing pad (adapted to be supplied with a slurry), a polishing head including a top ring for holding a wafer, and a buffer ring providing a buffer space around a wafer edge region (e.g., between an edge region of the wafer and a slurry eddy that may be formed in front of the polishing head).
- The buffer ring may be fixedly installed on or attached to the top ring or be integrally formed therewith, and the buffer ring may have a radius that is about 0.1-5 mm larger than that of the top ring.
- Even though a slurry on a polishing pad may create an eddy in front of the moving direction of a polishing head, such a CMP apparatus can prevent the phenomenon in which a copper layer around an edge of the wafer W may become dented (or locally overpolished) by a chemical reaction of the slurry with material at or near the wafer edge because of the 0.1-5 mm-sized buffer space around the wafer edge (e.g., formed between a slurry eddy and the edge region of the wafer).
-
FIG. 1 is a cross-sectional (or schematic) diagram of a conventional CMP apparatus. -
FIG. 2 is a cross-sectional (or schematic) diagram of a CMP apparatus according to an exemplary embodiment of the present invention. - An exemplary embodiment of the present invention will hereinafter be described in detail with reference to the accompanying drawings.
-
FIG. 2 is a diagram of a CMP apparatus according to an exemplary embodiment of the present invention. - As shown in
FIG. 2 , a CMP apparatus of the present embodiment includes apolishing pad 12 and a polishing head 14. Although not shown in FIG. 2, thepolishing pad 12 may be installed on or attached or fixed to an upper surface of a platen that is rotatably or fixedly supported by a supporting shaft. - The polishing head 14 includes a
top ring 14a used for holding the wafer W. In addition, a slurry supply nozzle (not shown) is installed above or at an upper part of thepolishing pad 12 in order to supply theslurry 16 to thepolishing pad 12. Therefore, when theslurry 16 is supplied to thepolishing pad 12 through the slurry supply nozzle, the polishing head 14 polishes the wafer W by pressing the wafer W against thepolishing pad 12. - In the present CMP apparatus, a buffer ring 14b may be installed on, around or at the
top ring 14 a of the polishing head 14. The buffer ring 14 b may be configured to include a buffer space 14′b thereunder, which may have a predetermined size (e.g., width or annular radius) such that the slurry that may accumulate in front of the moving direction (shown by an arrow) of the polishing head 14 may be inhibited or prevented from contacting an edge region of the wafer W. AlthoughFIG. 2 illustrates that the buffer ring 14 b and thetop ring 14 a are formed as separate members, the buffer ring 14 b and thetop ring 14 a may be integrally formed (e.g., they may comprise an integral unit). - Furthermore, the buffer ring 14 b may be configured without a buffer space, in which case the buffer ring 14 b may have a predetermined size (e.g., width or annular radius) of 0.1-5.0 mm, 0.2-3.0 mm, or any range of values therein. Providing a buffer space 14′b adjacent to the wafer edge, however, may reduce trapping of slurry particles against the edge of the wafer W (e.g., between the wafer edge and the inner surface of buffer ring 14 b), and thus reduce potential damage to the wafer W and/or improve device yield.
- Buffer space 14′b and/or the buffer ring 14 b may have a radius of about 0.1-5 mm greater than the top ring. According to such a configuration, the buffer space 14′b of the above-mentioned size, for example 0.1-5 mm, may be provided between an interior lateral side of the buffer ring 14 b and the edge of the wafer W. Buffer ring 14 b and/or buffer space 14′b may be formed according to techniques known to those skilled in the art (e.g., machining).
- In accordance with the present CMP apparatus, the
slurry 16 on thepolishing pad 12 may accumulate at the exterior front of the buffer ring 14 b in the moving direction of the polishing head 14. Therefore, even though the slurry eddy may accumulate in front of the moving direction of the polishing head 14, the “black belt” or “denting” phenomenon involving a copper layer at or around a wafer edge and/or bead region can be reduced or prevented because of the 0.1-5 mm-sized buffer space 14′b around the periphery of the polishing head 14 (e.g., formed between the eddy region of the slurry and the edge region of the wafer). - As described above, according to an exemplary embodiment of the present CMP apparatus, a buffer ring may provide or form a buffer space around the periphery or circumference of the polishing head (e.g., to provide a buffer between the edge region of the wafer and a slurry eddy that may be formed in front of the polishing head in its direction of movement). Therefore, the present CMP apparatus can reduce or prevent the phenomenon that a copper layer is dented by the slurry eddy, a so-called “black belt” phenomenon. As a result, device yield may be enhanced because a short circuit or disconnection in a copper line due to the dent or black belt phenomenon may be reduced or prevented.
- While this invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0111050 | 2004-12-23 | ||
KR1020040111050A KR100579865B1 (en) | 2004-12-23 | 2004-12-23 | Chemical mechanical polishing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060141909A1 true US20060141909A1 (en) | 2006-06-29 |
Family
ID=36612372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/282,759 Abandoned US20060141909A1 (en) | 2004-12-23 | 2005-11-17 | Chemical mechanical polishing apparatus |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060141909A1 (en) |
KR (1) | KR100579865B1 (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5885140A (en) * | 1996-05-29 | 1999-03-23 | Speedfam Co., Ltd. | Single-side abrasion apparatus with dresser |
US6093091A (en) * | 1997-12-16 | 2000-07-25 | Peter Wolters Werkzeugmaschinen Gmbh | Holder for flat subjects in particular semiconductor wafers |
US6110025A (en) * | 1997-05-07 | 2000-08-29 | Obsidian, Inc. | Containment ring for substrate carrier apparatus |
US6113468A (en) * | 1999-04-06 | 2000-09-05 | Speedfam-Ipec Corporation | Wafer planarization carrier having floating pad load ring |
US6309290B1 (en) * | 1999-03-03 | 2001-10-30 | Mitsubishi Materials Corporation | Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control |
US6419567B1 (en) * | 2000-08-14 | 2002-07-16 | Semiconductor 300 Gmbh & Co. Kg | Retaining ring for chemical-mechanical polishing (CMP) head, polishing apparatus, slurry cycle system, and method |
US6517422B2 (en) * | 2000-03-07 | 2003-02-11 | Toshiba Ceramics Co., Ltd. | Polishing apparatus and method thereof |
US20040002291A1 (en) * | 2002-06-28 | 2004-01-01 | Lam Research Corp. | Partial-membrane carrier head |
US20050245005A1 (en) * | 2004-04-29 | 2005-11-03 | Benson Peter A | Wafer edge ring structures and methods of formation |
-
2004
- 2004-12-23 KR KR1020040111050A patent/KR100579865B1/en not_active IP Right Cessation
-
2005
- 2005-11-17 US US11/282,759 patent/US20060141909A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5885140A (en) * | 1996-05-29 | 1999-03-23 | Speedfam Co., Ltd. | Single-side abrasion apparatus with dresser |
US6110025A (en) * | 1997-05-07 | 2000-08-29 | Obsidian, Inc. | Containment ring for substrate carrier apparatus |
US6093091A (en) * | 1997-12-16 | 2000-07-25 | Peter Wolters Werkzeugmaschinen Gmbh | Holder for flat subjects in particular semiconductor wafers |
US6309290B1 (en) * | 1999-03-03 | 2001-10-30 | Mitsubishi Materials Corporation | Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control |
US6113468A (en) * | 1999-04-06 | 2000-09-05 | Speedfam-Ipec Corporation | Wafer planarization carrier having floating pad load ring |
US6517422B2 (en) * | 2000-03-07 | 2003-02-11 | Toshiba Ceramics Co., Ltd. | Polishing apparatus and method thereof |
US6419567B1 (en) * | 2000-08-14 | 2002-07-16 | Semiconductor 300 Gmbh & Co. Kg | Retaining ring for chemical-mechanical polishing (CMP) head, polishing apparatus, slurry cycle system, and method |
US20040002291A1 (en) * | 2002-06-28 | 2004-01-01 | Lam Research Corp. | Partial-membrane carrier head |
US20050245005A1 (en) * | 2004-04-29 | 2005-11-03 | Benson Peter A | Wafer edge ring structures and methods of formation |
Also Published As
Publication number | Publication date |
---|---|
KR100579865B1 (en) | 2006-05-12 |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: DONGBUANAM SEMICONDUCTOR INC., KOREA, REPUBLIC OF Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HAN, JAE-WON;REEL/FRAME:017265/0577 Effective date: 20051117 |
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Owner name: DONGBU ELECTRONICS CO., LTD.,KOREA, REPUBLIC OF Free format text: CHANGE OF NAME;ASSIGNOR:DONGANAM SEMICONDUCTOR INC.;REEL/FRAME:017749/0335 Effective date: 20060328 Owner name: DONGBU ELECTRONICS CO., LTD., KOREA, REPUBLIC OF Free format text: CHANGE OF NAME;ASSIGNOR:DONGANAM SEMICONDUCTOR INC.;REEL/FRAME:017749/0335 Effective date: 20060328 |
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AS | Assignment |
Owner name: DONGBU ELECTRONICS CO., LTD., KOREA, REPUBLIC OF Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 017749 FRAME 0335;ASSIGNOR:DONGBUANAM SEMICONDUCTOR INC.;REEL/FRAME:017821/0670 Effective date: 20060328 Owner name: DONGBU ELECTRONICS CO., LTD.,KOREA, REPUBLIC OF Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 017749 FRAME 0335. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNOR SHOULD BE "DONGBUANAM SEMICONDUCTOR INC.";ASSIGNOR:DONGBUANAM SEMICONDUCTOR INC.;REEL/FRAME:017821/0670 Effective date: 20060328 Owner name: DONGBU ELECTRONICS CO., LTD., KOREA, REPUBLIC OF Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 017749 FRAME 0335. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNOR SHOULD BE "DONGBUANAM SEMICONDUCTOR INC.";ASSIGNOR:DONGBUANAM SEMICONDUCTOR INC.;REEL/FRAME:017821/0670 Effective date: 20060328 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |