US20060132893A1 - Optical modulator with a traveling surface relief pattern - Google Patents
Optical modulator with a traveling surface relief pattern Download PDFInfo
- Publication number
- US20060132893A1 US20060132893A1 US11/017,402 US1740204A US2006132893A1 US 20060132893 A1 US20060132893 A1 US 20060132893A1 US 1740204 A US1740204 A US 1740204A US 2006132893 A1 US2006132893 A1 US 2006132893A1
- Authority
- US
- United States
- Prior art keywords
- layer
- phase
- assembly according
- electrodes
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0825—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a flexible sheet or membrane, e.g. for varying the focus
Definitions
- the present exemplary embodiment relates to optical grating assemblies. It finds particular application in conjunction with an assembly and method for an elastomer-based grating assembly based on a travelling surface relief pattern for use as a variable optical attenuator, and will be described with particular reference thereto. However, it is to be appreciated that the present exemplary embodiment is also amenable to other like applications.
- Fiber networks normally employ point-to-point links, which are static, where most of the intelligence, provisioning and grooming functions are provided by electronics at the ends of each link.
- point-to-point links which are static, where most of the intelligence, provisioning and grooming functions are provided by electronics at the ends of each link.
- this approach to building and maintaining network infrastructure will not satisfy the requirements of reliability, efficiency and cost-effectiveness required by service providers. Therefore, the industry is moving to optically reconfigurable networks where optical paths, wavelengths and data rates are dynamically changed to satisfy network system requirements, such as provisioning new wavelengths, balancing data loads and restoring after-service malfunctions.
- VOA Variable optical attenuators
- VOAs may be used to dynamically lower the optical power levels depending on the length of the network route so that appropriate power levels are received at the end receivers.
- a VOA will lower the power output of the switched wavelength to permit a signal of acceptable strength at the end receiver.
- the VOAs may be maintained at a particular power level for long durations, e.g., several months or even several years. Drift of the output power of the VOA can become an issue under such circumstances.
- VOAs commonly implement mechanical systems to attenuate the light. In one design, attenuation is accomplished by moving two separate optical fibers, and in another by inserting a motor-driven blade or filter in the light path. While these devices have acceptable optical performance, tradeoffs include slow speed, undesirable noise and a potential for mechanical failure.
- U.S. Pat. No. 6,556,727 to Minakata et al. in its Abstract describes the concept of a traveling wave-type optical modulator having a substrate made of an electro-optic material, optical waveguides fabricated on the top surface of the substrate, and electrodes for modulating an optical wave through the optical waveguide.
- the substrate is partially thinned from the bottom surface of the substrate to form a first thin portion and a second thin portion so the thickness of the first thin portion is set to be larger than the thickness of the second thin portion, and the optical waveguide is positioned in the first thin portion.
- this application does not discuss the use of a traveling wave used to create phase gratings that have corrugations with nearly constant pitch and depth.
- a variable modulator assembly comprising a compliant layer having a first and a second surface.
- a deformable layer is adhered to the first surface of the compliant layer, and an electrode configuration consisting of a plurality of electrodes is in contact with the second surface of the compliant layer.
- the electrode configuration is configured for n-phase operation, with n>2.
- a controller is configured to selectively apply a variable signal to selected electrodes of the electrode configuration, wherein application of the variable signal causes the deformable layer to reconfigure to an altered shape having distinct peaks and valleys, the distance between the peaks and valleys being determined by the value of the applied variable signal, and wherein the altered shape moves in a preferred direction in the plane of the deformable layer.
- an optical modulating method comprises positioning a variable modulator assembly to receive light from a light source, wherein a deformable layer is adhered to a first surface of a compliant layer of the light source, and deformation of the deformable layer is controlled by selective activation of an electrode configuration adhered to a second surface of the compliant layer.
- the activation of the electrode configuration is controlled by a controller which 9 generates a variable signal and transmits the variable signal to selected electrodes of the electrode configuration.
- Activation of the electrodes creates electrostatic charges which deform the deformable layer into a travelling pattern moving in a direction parallel to the plane of the deformable layer corresponding to the activated electrodes.
- a VOA device fabrication method comprises depositing a bus metal layer on a substrate, patterning the bus metal layer, depositing a dielectric layer on the bus metal layer and the substrate, forming a via in the dielectric layer to the bus metal layer, depositing a bottom electrode metal layer in contact with the bus metal layer, the bottom electrode layer being configured for n-phase operation, wherein n>2, spin coating a compliant layer onto the bottom electrode layer and the dielectric layer, and depositing a blanket top electrode/reflector metal layer onto the compliant layer.
- FIG. 1A is cross-sectional view of a variable optical modulator system according to concepts of the present application
- FIG. 1B is top schematic view of an electrode configuration of the system of FIG. 1A ;
- FIG. 2A is cross-sectional view of an exemplary variable optical modulator system prior to application of a signal voltage
- FIG. 2B is cross-sectional view of the variable optical modulator system of FIG. 2A showing corrugations after application of a signal voltage;
- FIG. 3 is a plot of a theoretical diffraction intensity of an exemplary reflective sinusoidal phase grating for increasing deformation
- FIG. 4A is a cross-sectional representation of an exemplary 3-phase traveling wave over one voltage cycle on a 3-phase VOA;
- FIG. 4B is a 3-dimensional representation of the 3-phase traveling wave of FIG. 4A ;
- FIG. 5A is a plot showing a 12-phase voltage across an electrode configuration according to embodiments of the present application at a particular point in time;
- FIG. 5B is a plot showing the progression of the 12-phase voltage of FIG. 5A at a later point in time
- FIG. 6A is a plot showing a 3-phase voltage across an electrode configuration according to embodiments of the present application at a particular point in time;
- FIG. 6B is a plot showing the progression of the 3-phase voltage of FIG. 6A at a later point in time
- FIG. 7 is a plot showing the maximum peak-to-peak voltage experienced by individual electrodes in exemplary VOA devices according to embodiments of the present application as a function of the phase difference between the electrodes;
- FIG. 8 is a plot showing the rms voltage jitter experienced by individual electrodes in exemplary VOA devices as a function of the phase difference between the electrodes;
- FIG. 9 is a plot showing the peak-to-peak voltage jitter experienced by individual electrodes in exemplary VOA devices as a function of the phase difference between the electrodes;
- FIG. 10 is a plot showing an exemplary maximum jitter in the optical power as a function of the phase difference between the electrodes configured according to concepts of the present application;
- FIG. 11 is an exemplary device fabrication procedure for embodiments of the present application.
- FIG. 12 shows exemplary device electrode configurations for embodiments of the present application.
- an elastomer-based VOA device 10 which may be a variable optical attenuator according to concepts of the present application, is illustrated in simplified schematic form.
- the VOA device 10 is constructed with a bottom electrode configuration 12 , comprising electrodes 12 a - 12 n , on a glass substrate 14 , a compliant layer 16 and a deformable top electrode 18 as shown in the figure.
- the bottom electrode configuration 12 is patterned using known photolithography techniques in order to achieve a desired surface relief pattern on the upper surface 20 of the top electrode 18 , the surface relief pattern corresponding to the system's grating structure.
- the electrode configuration is an interdigitated pattern as illustrated in FIG. 1B .
- the compliant layer 16 may be a dielectric, elastomer or electrostrictive material, such as Poly-di-methyl-siloxane (PDMS) formed by known spin-coating or other manufacturing techniques. Piezo-electric materials like poly vinylidene fluoride may also be considered, provided that the frequency of operation is carefully chosen.
- Top electrode 18 may be an individual or pixel electrode, the electrode may be constructed using at least one of a TFT or CMOS design.
- the upper surface 20 of the deformable top electrode 18 is made to be a reflective surface, which may be a polished surface of the deformable compliant layer 16 , or may be a separate blanket or patterned layer made of reflective material including but not limited to a variety of metals.
- the deformable top electrode 18 is directly attached onto an upper surface of the compliant layer 16 .
- an interposed protective layer (not shown) is provided.
- the deformable top electrode 18 is conductive as well as reflective. In the configuration shown, the top deformable electrode 18 is made to be conductive and reflective by depositing a thin film of silver.
- the VOA device 10 shown in FIGS. 1A-1B comprises a configurable reflection phase grating that generates a nearly sinusoidal surface relief pattern by the application of voltage by the controller 22 to the bottom electrode configuration 12 .
- the reflective upper surface 20 , of the deformable layer 18 is designed to be reflective and act as a mirror as shown in FIG. 2A when no voltage is applied to the electrode configuration.
- the deformable layer 18 is grounded, and the electrode configuration 12 is supplied with a bias and/or variable voltage from a voltage signal generator/controller 22 in order to produce the desired grating structure of the system.
- the compliant layer 16 experiences an electrostrictive force.
- the electric field corrugates the upper surface 20 according to the bottom electrode geometry as shown in FIG. 2B .
- d is the grating constant
- ⁇ i is the incident angle
- ⁇ m is the diffracted angle
- m the diffraction order
- ⁇ is the wavelength of the diffracted light.
- the intensity of light diffracted into the various orders depends on the corrugation depth.
- the reflective surface 20 acts as a mirror, and displacement of an impinging light beam is at substantially zero displacement.
- the voltage to the electrode configuration 12 is increased by the controller 22 , displacement, or diffraction, of the light is increased.
- Analog control of the reflected light may be achieved by monitoring at least one of the diffracted order wavelengths such as the 1 st order diffracted wavelength. For example, initially, the 0 th order and 1 st order diffraction intensity as a function of voltage is calibrated and this information used to control the intensity of the 0 th order by monitoring the 1 st order diffraction.
- a light source 26 emits a light beam 28 .
- a reflected light portion 30 is transmitted to an element 32 , such as a fiber, receiver, or other mechanism.
- a diffracted light wave 34 is sensed by a sensor 36 .
- the sensor 36 may be substantially transparent to the wavelength of the diffracted light 34 for situations where additional testing or use of the diffracted light wave 34 is to be undertaken. Output from the sensor 36 is provided via a feedback line 38 to the controller 22 . Feedback circuitry included in the controller 22 uses the signal obtained from the 1 st order diffracted wavelength to control the voltage applied to the electrode configuration 12 .
- This design permits for a non-destructive monitoring and controlling of the 0 th order.
- the deformation of the deformable layer 18 , with the reflective surface 20 is controlled from the 0 th order to the 1 st order by an analog control mechanism.
- the intensity output value for the 0 th order is closely controllable. For example, when no variable voltage is applied (so the surface is essentially a mirror) the intensity output of a beam of light to the component 32 may be substantially 100 percent of the light beam 28 .
- the amount of voltage supplied to the electrode configuration 12 is undertaken to increase the deformation such that 25 percent of the intensity goes into higher order diffracted wavelengths (e.g., 34 ). More generally, the present design permits analog control from a first displacement of the deformable layer 18 to a second displacement of the deformable layer.
- FIG. 3 shows the theoretical diffraction intensity of a reflective sinusoidal phase grating for increasing deformation, i.e., increasing corrugation depth.
- the light reflected from the surface relief pattern of the corrugation is subject to essentially 100 percent destructive interference for the nominally reflecting beam. At this point, all of the reflected light is totally diffracted and essentially none is reflected.
- the VOA devices are usually maintained at any particular power level for long durations, which may be, e.g., several months or even several years. Long term drift of the output power of the VOA device can become an issue under such circumstances.
- generating a constant diffracted intensity means the device should produce a surface relief pattern where the corrugation pitch and depth does not change significantly with time. It has been found that cycling the voltage controls the drift more effectively than when the device works at a fixed DC bias. Therefore, an improvement is realized by providing a traveling wave to gratings that are intended to have corrugations with nearly constant pitch and depth of the peaks and valleys of the surface.
- the electrode configuration 12 is swept with a variable signal (which in this embodiment is an analog signal) by the controller 22 .
- the controller 22 may have n-phase (n>2) drive electrodes, rather than the two illustrated in FIGS. 1B and 2B , and the electrode configuration 12 will have a corresponding number of sets of electrodes as described in more detail below.
- FIG. 4A shows a 3-phase traveling wave over one voltage cycle on a VOA device 10 having an electrode configuration 12 configured for a 3-phase input.
- an initial 3-phase voltage is applied to the interdigitated electrode configuration 12 , as represented for visualization purposes, e.g., by the patterns shown on each of the electrodes 12 a - 12 c. This initial voltage causes the reflecting surface 20 to have a corrugation corresponding approximately to a sine wave as shown.
- t 0 . 33 ( 54 )
- t 0 . 66 ( 56 )
- FIG. 4B shows a 3-dimensional plot of the applied 3-phase voltage ( 60 ) at the bottom electrode configuration 12 for the example shown in FIG. 4A , as a function of electrode position 62 and time 64 , graphically illustrating the concept of the travelling wave.
- the phase difference between adjacent electrodes of the electrode configuration 12 depends on the specified tolerance of the output power. While a 12-phase voltage provides a grating waveform closer to an actual sinusoidal grating, it has the disadvantage of providing a lower diffraction angle and requires more complicated electronics. A 3-phase voltage, on the other hand, does not approximate an actual sinusoidal grating as well as the 12-phase voltage, but provides a larger diffraction angle and requires less complicated drive electronics than the 12-phase voltage.
- FIGS. 5A-5B show the progression of a 12-phase voltage across the electrode configuration 12 at two different times. At a first time shown in FIG. 5A , the applied voltage 66 at each of the electrodes 12 a - 12 n is seen to closely approximate a sine wave voltage.
- the voltage potential between adjacent electrodes is approximated by a straight line, but because of the number of phases, the voltage curve 66 follows a general approximation of a sine wave.
- the applied voltage waveform 66 has advanced across the electrodes 12 a - 12 n, but still generally approximates a sine wave voltage.
- FIGS. 6A-6B similarly show the progression of a 3-phase voltage across the electrode configuration 12 at two different times.
- the applied voltage 68 at each of the electrodes 12 a - 12 n only loosely approximates a sine wave voltage. However, for many applications, depending on the necessary output tolerance, this approximation is adequate.
- the voltage potential between adjacent electrodes is again approximated by a straight line, but because of the fewer number of phases, the voltage curve 68 takes on the appearance of a saw-tooth wave at the time shown in the figure.
- the applied voltage waveform 68 has advanced across the electrodes 12 a - 12 n, and the shape has changed noticeably, but still loosely approximates a sine wave voltage.
- peak-to-peak voltage is approximately 170 volts.
- This short term variation in peak-to-peak voltage constitutes a jitter which has been simulated and has been shown to be higher for the 3-phase voltage than for the 12-phase voltage as can be seen in the respective figures.
- the maximum peak-to-peak voltage experienced by the individual electrodes in a VOA device, as a function of the phase difference between the electrodes, is shown in FIG. 7 .
- the maximum peak-to-peak voltage is shown for exemplary embodiments of 12 phase ( 70 ), 7 phase ( 72 ), 6 phase ( 74 ), 5 phase ( 76 ), 4 phase ( 78 ), and 3 phase ( 80 ) circuits. It may also be observed for these particular embodiments that the even phases yield the highest peak-to-peak voltages, while the odd phases yield a peak-to-peak voltage that declines as the number of phases is reduced.
- the maximum peak-to-peak voltage determines the maximum depth of the corrugation that will be possible.
- the maximum jitter in the rms voltage as a function of the phase difference between the electrodes is shown in FIG. 8 .
- the maximum rms jitter is shown, as in FIG. 7 , for 12, 7, 6, 5, 4, and 3 phase circuits ( 82 - 92 respectively).
- FIG. 9 shows the maximum jitter in the peak-to-peak voltage as a function of the phase difference between the electrodes for the same 12, 7, 6, 5, 4, and 3 phase circuits ( 94 - 104 respectively). Jitter in the maximum peak to peak voltages of the bottom electrodes 12 corresponds to jitter in the corrugation depth, which in turn corresponds to the diffraction optical power.
- the maximum jitter in the optical power as a function of the phase difference between the electrodes is shown in FIG. 10 ( 106 - 116 ).
- the odd phases ( 108 , 112 , 116 ) generally have a lower optical power jitter compared to the even phases ( 106 , 110 , 114 ).
- an exemplary device fabrication procedure includes the following steps:
- FIG. 12 of the device of FIG. 11 A top view is provided in FIG. 12 of the device of FIG. 11 to further illustrate the exemplary device layouts.
- the figure is abstracted in order to more clearly show the bus metal 120 , the via 126 , and the bottom electrode metal layer 128 .
- Exemplary layouts are shown for a 2 phase device 140 , a 3 phase device 142 , a 4 phase device 144 , and a 5 phase device 146 . It should be obvious from the examples provided that the aforementioned process and device layouts can be extended to devices of any number of phases. It should also be noted that the process described, and the device layouts provided are for purposes of explaining embodiments of the present disclosure only, and the disclosure is not limited to the layouts and process provided herein.
- an advantage of the device structure provided in FIGS. 11 and 12 is that the number of mask layers does not depend on the number of phases. In other words, only three mask layers are required to produce 2, 3, 4, 5 . . . n-phase devices.
- concepts of the present disclosure are intended to include other n-phase embodiments which incorporate the concept of a travelling wave in the deformable layer as described herein.
- the electrode configuration may be a multi-layer configuration.
- the signal applied to the bottom electrodes can be different from sinusoidal signals depending on the response required.
- Sinusoidal signals were used in describing various embodiments, however, the present disclosure is not limited by the waveshape of the applied signals.
- square wave and sawtooth signals are suitable for use with devices embodying concepts of the present disclosure.
- MEMS Micro-Electro-Mechanical-Systems
- the foregoing concepts may be used in MEMS grating-based optical modulators which do not use a compliant layer as previously described, but rather the layer is one of air, used to separate top and bottom layers/electrodes.
- This technique may also be useful for elastomer and other MEMS-based surface relief patterns, e.g., Fresnel lens, electronic holograms, etc.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
Description
- The following application is related to the present disclosure: U.S. Ser. No. 10/423752, Uma Srinivasan, Eric J. Shrader, entitled CONFIGURABLE GRATING BASED ON SURFACE RELIEF PATTERN FOR USE AS A VARIABLE OPTICAL ATTENUATOR, fully incorporated herein by reference.
- The present exemplary embodiment relates to optical grating assemblies. It finds particular application in conjunction with an assembly and method for an elastomer-based grating assembly based on a travelling surface relief pattern for use as a variable optical attenuator, and will be described with particular reference thereto. However, it is to be appreciated that the present exemplary embodiment is also amenable to other like applications.
- Fiber networks normally employ point-to-point links, which are static, where most of the intelligence, provisioning and grooming functions are provided by electronics at the ends of each link. As network architectures grow in size and complexity, however, this approach to building and maintaining network infrastructure will not satisfy the requirements of reliability, efficiency and cost-effectiveness required by service providers. Therefore, the industry is moving to optically reconfigurable networks where optical paths, wavelengths and data rates are dynamically changed to satisfy network system requirements, such as provisioning new wavelengths, balancing data loads and restoring after-service malfunctions.
- Variable optical attenuators (VOA) are used to permit dynamic control of optical power levels throughout a communications, telecommunications or other transmission network. As traffic in networks increase, VOAs may be used to dynamically lower the optical power levels depending on the length of the network route so that appropriate power levels are received at the end receivers. As an example of their usefulness, if a network is providing a wavelength route that is approximately 60 km in length, at a predetermined power, and the network attempts to change the wavelength route to one which is 30 km, it would be expected that excessive power would be delivered to the end receivers of the 30 km route, potentially resulting in a malfunction in the network. A VOA will lower the power output of the switched wavelength to permit a signal of acceptable strength at the end receiver. The VOAs may be maintained at a particular power level for long durations, e.g., several months or even several years. Drift of the output power of the VOA can become an issue under such circumstances.
- Existing VOAs commonly implement mechanical systems to attenuate the light. In one design, attenuation is accomplished by moving two separate optical fibers, and in another by inserting a motor-driven blade or filter in the light path. While these devices have acceptable optical performance, tradeoffs include slow speed, undesirable noise and a potential for mechanical failure.
- Work on a traveling wave concept has primarily been focused in the area of surface acoustic waves, piezoelectrics, and electro-optic modulators where refractive index is changed by the application of electric fields.
- In one particular example, U.S. Pat. No. 6,556,727 to Minakata et al. in its Abstract describes the concept of a traveling wave-type optical modulator having a substrate made of an electro-optic material, optical waveguides fabricated on the top surface of the substrate, and electrodes for modulating an optical wave through the optical waveguide. The substrate is partially thinned from the bottom surface of the substrate to form a first thin portion and a second thin portion so the thickness of the first thin portion is set to be larger than the thickness of the second thin portion, and the optical waveguide is positioned in the first thin portion. Among other concepts, this application does not discuss the use of a traveling wave used to create phase gratings that have corrugations with nearly constant pitch and depth.
- The foregoing material does not address the noted shortcomings of existing systems.
- In accordance with one aspect of the present exemplary embodiment, there is provided a variable modulator assembly comprising a compliant layer having a first and a second surface. A deformable layer is adhered to the first surface of the compliant layer, and an electrode configuration consisting of a plurality of electrodes is in contact with the second surface of the compliant layer. The electrode configuration is configured for n-phase operation, with n>2. A controller is configured to selectively apply a variable signal to selected electrodes of the electrode configuration, wherein application of the variable signal causes the deformable layer to reconfigure to an altered shape having distinct peaks and valleys, the distance between the peaks and valleys being determined by the value of the applied variable signal, and wherein the altered shape moves in a preferred direction in the plane of the deformable layer.
- In accordance with another aspect of the present exemplary embodiment, there is provided an optical modulating method. The method comprises positioning a variable modulator assembly to receive light from a light source, wherein a deformable layer is adhered to a first surface of a compliant layer of the light source, and deformation of the deformable layer is controlled by selective activation of an electrode configuration adhered to a second surface of the compliant layer. The activation of the electrode configuration is controlled by a controller which9 generates a variable signal and transmits the variable signal to selected electrodes of the electrode configuration. Activation of the electrodes creates electrostatic charges which deform the deformable layer into a travelling pattern moving in a direction parallel to the plane of the deformable layer corresponding to the activated electrodes.
- In accordance with yet another aspect of the present exemplary embodiment, there is provided a VOA device fabrication method. The method comprises depositing a bus metal layer on a substrate, patterning the bus metal layer, depositing a dielectric layer on the bus metal layer and the substrate, forming a via in the dielectric layer to the bus metal layer, depositing a bottom electrode metal layer in contact with the bus metal layer, the bottom electrode layer being configured for n-phase operation, wherein n>2, spin coating a compliant layer onto the bottom electrode layer and the dielectric layer, and depositing a blanket top electrode/reflector metal layer onto the compliant layer.
-
FIG. 1A is cross-sectional view of a variable optical modulator system according to concepts of the present application; -
FIG. 1B is top schematic view of an electrode configuration of the system ofFIG. 1A ; -
FIG. 2A is cross-sectional view of an exemplary variable optical modulator system prior to application of a signal voltage; -
FIG. 2B is cross-sectional view of the variable optical modulator system ofFIG. 2A showing corrugations after application of a signal voltage; -
FIG. 3 is a plot of a theoretical diffraction intensity of an exemplary reflective sinusoidal phase grating for increasing deformation; -
FIG. 4A is a cross-sectional representation of an exemplary 3-phase traveling wave over one voltage cycle on a 3-phase VOA; -
FIG. 4B is a 3-dimensional representation of the 3-phase traveling wave ofFIG. 4A ; -
FIG. 5A is a plot showing a 12-phase voltage across an electrode configuration according to embodiments of the present application at a particular point in time; -
FIG. 5B is a plot showing the progression of the 12-phase voltage ofFIG. 5A at a later point in time; -
FIG. 6A is a plot showing a 3-phase voltage across an electrode configuration according to embodiments of the present application at a particular point in time; -
FIG. 6B is a plot showing the progression of the 3-phase voltage ofFIG. 6A at a later point in time; -
FIG. 7 is a plot showing the maximum peak-to-peak voltage experienced by individual electrodes in exemplary VOA devices according to embodiments of the present application as a function of the phase difference between the electrodes; -
FIG. 8 is a plot showing the rms voltage jitter experienced by individual electrodes in exemplary VOA devices as a function of the phase difference between the electrodes; -
FIG. 9 is a plot showing the peak-to-peak voltage jitter experienced by individual electrodes in exemplary VOA devices as a function of the phase difference between the electrodes; -
FIG. 10 is a plot showing an exemplary maximum jitter in the optical power as a function of the phase difference between the electrodes configured according to concepts of the present application; -
FIG. 11 is an exemplary device fabrication procedure for embodiments of the present application; and -
FIG. 12 shows exemplary device electrode configurations for embodiments of the present application. - With reference to
FIG. 1A , an elastomer-basedVOA device 10, which may be a variable optical attenuator according to concepts of the present application, is illustrated in simplified schematic form. TheVOA device 10 is constructed with abottom electrode configuration 12, comprisingelectrodes 12 a-12 n, on aglass substrate 14, acompliant layer 16 and a deformabletop electrode 18 as shown in the figure. In one embodiment, thebottom electrode configuration 12 is patterned using known photolithography techniques in order to achieve a desired surface relief pattern on theupper surface 20 of thetop electrode 18, the surface relief pattern corresponding to the system's grating structure. In this exemplary embodiment, the electrode configuration is an interdigitated pattern as illustrated inFIG. 1B . Thecompliant layer 16 may be a dielectric, elastomer or electrostrictive material, such as Poly-di-methyl-siloxane (PDMS) formed by known spin-coating or other manufacturing techniques. Piezo-electric materials like poly vinylidene fluoride may also be considered, provided that the frequency of operation is carefully chosen.Top electrode 18 may be an individual or pixel electrode, the electrode may be constructed using at least one of a TFT or CMOS design. - The
upper surface 20 of the deformabletop electrode 18 is made to be a reflective surface, which may be a polished surface of the deformablecompliant layer 16, or may be a separate blanket or patterned layer made of reflective material including but not limited to a variety of metals. In one embodiment, the deformabletop electrode 18 is directly attached onto an upper surface of thecompliant layer 16. In other embodiments an interposed protective layer (not shown) is provided. The deformabletop electrode 18 is conductive as well as reflective. In the configuration shown, the topdeformable electrode 18 is made to be conductive and reflective by depositing a thin film of silver. - The
VOA device 10 shown inFIGS. 1A-1B comprises a configurable reflection phase grating that generates a nearly sinusoidal surface relief pattern by the application of voltage by thecontroller 22 to thebottom electrode configuration 12. The reflectiveupper surface 20, of thedeformable layer 18, is designed to be reflective and act as a mirror as shown inFIG. 2A when no voltage is applied to the electrode configuration. In this embodiment, thedeformable layer 18 is grounded, and theelectrode configuration 12 is supplied with a bias and/or variable voltage from a voltage signal generator/controller 22 in order to produce the desired grating structure of the system. As the applied voltage is increased, thecompliant layer 16 experiences an electrostrictive force. The compressive stress p experienced by the compliant layer is given by
p=ε 0εr E 2
where, E is the electric field generated by the applied voltage, and ε0, εr are the permittivity of free space and the relative dielectric constant, respectively. The electric field corrugates theupper surface 20 according to the bottom electrode geometry as shown inFIG. 2B . - The corrugation of the
upper surface 20 causes the VOA device to behave like a diffraction grating and higher orders of diffracted light are observed as described by
d(sin θ i+sin θm)=mλ
where, d is the grating constant, θi is the incident angle, θm is the diffracted angle, m is the diffraction order and λ is the wavelength of the diffracted light. The intensity of light diffracted into the various orders depends on the corrugation depth. - Interference between light reflected from the top and bottom of the corrugation in the phase grating of the
upper layer 20 causes the varying intensity and may be expressed as
I n=AJ n 2[Δm]
where In is the intensity of light in the nth order beam, A is a proportionality constant that depends on the signal intensity, Jn is a Bessel function of order n, Δm is the phase difference, which depends on the corrugation depth h (24) and is given by Δm=4πh/λ. - To illustrate further, when no variable voltage is supplied from the
controller 22, thereflective surface 20 acts as a mirror, and displacement of an impinging light beam is at substantially zero displacement. As the voltage to theelectrode configuration 12 is increased by thecontroller 22, displacement, or diffraction, of the light is increased. When the surface relief pattern is displaced by a quarter wavelength, i.e., h=λ/4, the light reflected from the uppermost part of thereflective surface 20 is 180 degrees out of phase with the light reflected from the lowermost part of the reflective surface, and destructive interference occurs. At this point, the light is totally diffracted, and essentially none is reflected. - Analog control of the reflected light may be achieved by monitoring at least one of the diffracted order wavelengths such as the 1st order diffracted wavelength. For example, initially, the 0th order and 1st order diffraction intensity as a function of voltage is calibrated and this information used to control the intensity of the 0th order by monitoring the 1st order diffraction. In one implementation, as shown in
FIG. 2B , alight source 26 emits alight beam 28. A reflectedlight portion 30 is transmitted to anelement 32, such as a fiber, receiver, or other mechanism. A diffractedlight wave 34, is sensed by asensor 36. Thesensor 36 may be substantially transparent to the wavelength of the diffractedlight 34 for situations where additional testing or use of the diffractedlight wave 34 is to be undertaken. Output from thesensor 36 is provided via afeedback line 38 to thecontroller 22. Feedback circuitry included in thecontroller 22 uses the signal obtained from the 1st order diffracted wavelength to control the voltage applied to theelectrode configuration 12. - This design permits for a non-destructive monitoring and controlling of the 0th order. Hence, in this example the deformation of the
deformable layer 18, with thereflective surface 20, is controlled from the 0th order to the 1st order by an analog control mechanism. By use of this analog control, the intensity output value for the 0th order is closely controllable. For example, when no variable voltage is applied (so the surface is essentially a mirror) the intensity output of a beam of light to thecomponent 32 may be substantially 100 percent of thelight beam 28. If the desired output requirements change wherein, e.g., only 75 percent intensity in the 0th order is needed, the amount of voltage supplied to theelectrode configuration 12 is undertaken to increase the deformation such that 25 percent of the intensity goes into higher order diffracted wavelengths (e.g., 34). More generally, the present design permits analog control from a first displacement of thedeformable layer 18 to a second displacement of the deformable layer. -
FIG. 3 shows the theoretical diffraction intensity of a reflective sinusoidal phase grating for increasing deformation, i.e., increasing corrugation depth. The 0th order diffraction intensity I0 (40) is maximum when Δm=0 and it is essentially zero when Δm=0.75π. In other words, when thereflective surface 20 relief pattern is displaced such that Δm=0.75π, the light reflected from the surface relief pattern of the corrugation is subject to essentially 100 percent destructive interference for the nominally reflecting beam. At this point, all of the reflected light is totally diffracted and essentially none is reflected. Hence in the range where the corrugation dimension h (24) is controlled, such that Δm is between 0 and 0.75π, an analog control of the light can be achieved. Also shown in the figure are the 1st order (42), 2nd order (44), and 3rd order (46) diffraction intensities. - As mentioned above the VOA devices are usually maintained at any particular power level for long durations, which may be, e.g., several months or even several years. Long term drift of the output power of the VOA device can become an issue under such circumstances. For a configurable grating based VOA, generating a constant diffracted intensity means the device should produce a surface relief pattern where the corrugation pitch and depth does not change significantly with time. It has been found that cycling the voltage controls the drift more effectively than when the device works at a fixed DC bias. Therefore, an improvement is realized by providing a traveling wave to gratings that are intended to have corrugations with nearly constant pitch and depth of the peaks and valleys of the surface.
- To create the traveling wave, the
electrode configuration 12 is swept with a variable signal (which in this embodiment is an analog signal) by thecontroller 22. To accomplish this, thecontroller 22 may have n-phase (n>2) drive electrodes, rather than the two illustrated inFIGS. 1B and 2B , and theelectrode configuration 12 will have a corresponding number of sets of electrodes as described in more detail below. This creates a phase grating in which there is minimal undesired change in the corrugation depth, and the grating pattern is moving in space, i.e., moving across thereflective surface 20. For example,FIG. 4A shows a 3-phase traveling wave over one voltage cycle on aVOA device 10 having anelectrode configuration 12 configured for a 3-phase input. - Prior to time t=0 (50), the
VOA device 10 has a smooth reflectingsurface 20 as shown. At time t=0 (52), an initial 3-phase voltage is applied to the interdigitatedelectrode configuration 12, as represented for visualization purposes, e.g., by the patterns shown on each of theelectrodes 12 a-12 c. This initial voltage causes the reflectingsurface 20 to have a corrugation corresponding approximately to a sine wave as shown. At times t=0.33 (54), t=0.66 (56), and t=1 (58), it may be observed that the 3-phase voltage pattern is moved across theelectrode configuration 12 by thecontroller 22. Consequently, the corrugation of the reflectingsurface 20 moves in phase with the 3-phase voltage across the reflecting surface.FIG. 4B shows a 3-dimensional plot of the applied 3-phase voltage (60) at thebottom electrode configuration 12 for the example shown inFIG. 4A , as a function ofelectrode position 62 andtime 64, graphically illustrating the concept of the travelling wave. - The phase difference between adjacent electrodes of the
electrode configuration 12 depends on the specified tolerance of the output power. While a 12-phase voltage provides a grating waveform closer to an actual sinusoidal grating, it has the disadvantage of providing a lower diffraction angle and requires more complicated electronics. A 3-phase voltage, on the other hand, does not approximate an actual sinusoidal grating as well as the 12-phase voltage, but provides a larger diffraction angle and requires less complicated drive electronics than the 12-phase voltage.FIGS. 5A-5B show the progression of a 12-phase voltage across theelectrode configuration 12 at two different times. At a first time shown inFIG. 5A , the appliedvoltage 66 at each of theelectrodes 12 a-12 n is seen to closely approximate a sine wave voltage. The voltage potential between adjacent electrodes is approximated by a straight line, but because of the number of phases, thevoltage curve 66 follows a general approximation of a sine wave. At a later time shown inFIG. 5B , the appliedvoltage waveform 66 has advanced across theelectrodes 12 a-12 n, but still generally approximates a sine wave voltage. -
FIGS. 6A-6B similarly show the progression of a 3-phase voltage across theelectrode configuration 12 at two different times. At a first time shown inFIG. 6A , the appliedvoltage 68 at each of theelectrodes 12 a-12n only loosely approximates a sine wave voltage. However, for many applications, depending on the necessary output tolerance, this approximation is adequate. The voltage potential between adjacent electrodes is again approximated by a straight line, but because of the fewer number of phases, thevoltage curve 68 takes on the appearance of a saw-tooth wave at the time shown in the figure. At a later time shown inFIG. 6B , the appliedvoltage waveform 68 has advanced across theelectrodes 12 a-12 n, and the shape has changed noticeably, but still loosely approximates a sine wave voltage. - The voltage at each electrode at position x for the examples shown in
FIGS. 5A-6B may be calculated using the equation
with Vpp =peak-to-peak voltage (e.g. 225V), Voffset =Vpp/2, and Φn being the phase difference between adjacent electrodes. It may be observed inFIGS. 5A-6B that the traveling wave goes through a maximum peak-to-peak voltage and minimum peak-to-peak voltage over time per cycle of the traveling wave. For example, by comparingFIG. 6A toFIG. 6B , it is observed that the peak-to-peak voltage is approximately 200 volts inFIG. 6A , whereas at a different time shown inFIG. 6B , the peak-to-peak voltage is approximately 170 volts. This short term variation in peak-to-peak voltage constitutes a jitter which has been simulated and has been shown to be higher for the 3-phase voltage than for the 12-phase voltage as can be seen in the respective figures. - The maximum peak-to-peak voltage experienced by the individual electrodes in a VOA device, as a function of the phase difference between the electrodes, is shown in
FIG. 7 . The maximum peak-to-peak voltage is shown for exemplary embodiments of 12 phase (70), 7 phase (72), 6 phase (74), 5 phase (76), 4 phase (78), and 3 phase (80) circuits. It may also be observed for these particular embodiments that the even phases yield the highest peak-to-peak voltages, while the odd phases yield a peak-to-peak voltage that declines as the number of phases is reduced. The maximum peak-to-peak voltage determines the maximum depth of the corrugation that will be possible. - The maximum jitter in the rms voltage as a function of the phase difference between the electrodes is shown in
FIG. 8 . The maximum rms jitter is shown, as inFIG. 7 , for 12, 7, 6, 5, 4, and 3 phase circuits (82-92 respectively). Likewise,FIG. 9 shows the maximum jitter in the peak-to-peak voltage as a function of the phase difference between the electrodes for the same 12, 7, 6, 5, 4, and 3 phase circuits (94-104 respectively). Jitter in the maximum peak to peak voltages of thebottom electrodes 12 corresponds to jitter in the corrugation depth, which in turn corresponds to the diffraction optical power. The maximum jitter in the optical power as a function of the phase difference between the electrodes is shown inFIG. 10 (106-116). For the embodiments represented in the figure, the odd phases (108, 112, 116) generally have a lower optical power jitter compared to the even phases (106, 110, 114). - Attention is now directed toward an exemplary device structure and process flow for producing embodiments incorporating concepts of the present disclosure. With reference to
FIG. 11 , an exemplary device fabrication procedure includes the following steps: -
- A
bus metal layer 120 is deposited on asubstrate 122, and thebus metal layer 120 is then patterned. - A dielectric layer (e.g. oxide) (124) is deposited on the
bus metal layer 120 and thesubstrate 122. - Next, a via 126 is made in the
dielectric layer 124 to thebus metal layer 120, and a bottomelectrode metal layer 128 is deposited in contact with thebus metal layer 120. - An
elastomer layer 130 is then spin coated onto thebottom electrode layer 128 and thedielectric layer 124. Finally, a blanket top electrode/reflector metal layer 132 is deposited onto theelastomer layer 130.
- A
- A top view is provided in
FIG. 12 of the device ofFIG. 11 to further illustrate the exemplary device layouts. The figure is abstracted in order to more clearly show thebus metal 120, the via 126, and the bottomelectrode metal layer 128. Exemplary layouts are shown for a 2phase device 140, a 3phase device 142, a 4phase device 144, and a 5phase device 146. It should be obvious from the examples provided that the aforementioned process and device layouts can be extended to devices of any number of phases. It should also be noted that the process described, and the device layouts provided are for purposes of explaining embodiments of the present disclosure only, and the disclosure is not limited to the layouts and process provided herein. - An advantage of the device structure provided in
FIGS. 11 and 12 is that the number of mask layers does not depend on the number of phases. In other words, only three mask layers are required to produce 2, 3, 4, 5 . . . n-phase devices. However, concepts of the present disclosure are intended to include other n-phase embodiments which incorporate the concept of a travelling wave in the deformable layer as described herein. For example, the electrode configuration may be a multi-layer configuration. - It is also to be appreciated that the signal applied to the bottom electrodes can be different from sinusoidal signals depending on the response required. Sinusoidal signals were used in describing various embodiments, however, the present disclosure is not limited by the waveshape of the applied signals. For example, square wave and sawtooth signals, among others, are suitable for use with devices embodying concepts of the present disclosure.
- Still further, the techniques described herein may also be used in other Micro-Electro-Mechanical-Systems (MEMS) grating-based optical modulators. For example, the foregoing concepts may be used in MEMS grating-based optical modulators which do not use a compliant layer as previously described, but rather the layer is one of air, used to separate top and bottom layers/electrodes. This technique may also be useful for elastomer and other MEMS-based surface relief patterns, e.g., Fresnel lens, electronic holograms, etc.
- It is to be appreciated that features of the foregoing embodiments may be combined with features of other embodiments described herein, and although components may be numbered differently, they may include characteristics of similar components found in the various embodiments.
- While particular embodiments have been described, alternatives, modifications, variations, improvements, and substantial equivalents that are or may be presently unforeseen may arise to applicants or others skilled in the art. Accordingly, the appended claims as filed and as they may be amended are intended to embrace all such alternatives, modifications, variations, improvements, and substantial equivalents.
Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/017,402 US7054054B1 (en) | 2004-12-20 | 2004-12-20 | Optical modulator with a traveling surface relief pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/017,402 US7054054B1 (en) | 2004-12-20 | 2004-12-20 | Optical modulator with a traveling surface relief pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
US7054054B1 US7054054B1 (en) | 2006-05-30 |
US20060132893A1 true US20060132893A1 (en) | 2006-06-22 |
Family
ID=36462677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/017,402 Expired - Fee Related US7054054B1 (en) | 2004-12-20 | 2004-12-20 | Optical modulator with a traveling surface relief pattern |
Country Status (1)
Country | Link |
---|---|
US (1) | US7054054B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080042516A1 (en) * | 2006-08-08 | 2008-02-21 | Palo Alto Research Center Incorporated | Traveling wave grids with agitated surface using piezoelectric effect and acoustic traveling waves |
JP2019113625A (en) * | 2017-12-21 | 2019-07-11 | 日本電信電話株式会社 | Optical element |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2875607B1 (en) * | 2004-09-20 | 2006-11-24 | Cit Alcatel | LOCAL DEFORMATION MIRROR THROUGH THICKNESS VARIATION OF AN ELECTRICALLY CONTROLLED ELECTRO-ACTIVE MATERIAL |
US7594443B2 (en) * | 2006-10-09 | 2009-09-29 | The Board Of Regents, University Of Texas System | Mechanically tunable optical-encoded force sensor |
US7894122B2 (en) * | 2008-02-08 | 2011-02-22 | Meritt Reynolds | Frequency-shifting micro-mechanical optical modulator |
US8659835B2 (en) * | 2009-03-13 | 2014-02-25 | Optotune Ag | Lens systems and method |
US8699141B2 (en) | 2009-03-13 | 2014-04-15 | Knowles Electronics, Llc | Lens assembly apparatus and method |
EP2322957A1 (en) | 2009-11-12 | 2011-05-18 | poLight AS | A method, device and system for reducing speckle contrast |
CN103119741B (en) * | 2010-09-09 | 2015-05-20 | 皇家飞利浦电子股份有限公司 | Electroactive polymer actuator |
US9081190B2 (en) | 2012-04-26 | 2015-07-14 | Qualcomm Mems Technologies, Inc. | Voltage controlled microlens sheet |
US9816941B2 (en) * | 2016-03-28 | 2017-11-14 | Saudi Arabian Oil Company | Systems and methods for constructing and testing composite photonic structures |
JP6561383B2 (en) * | 2017-03-31 | 2019-08-21 | 住友大阪セメント株式会社 | Light modulation element |
US10689754B2 (en) | 2017-09-05 | 2020-06-23 | Peter C. Salmon | Programmable charge storage arrays and associated manufacturing devices and systems |
US10312319B2 (en) * | 2017-09-05 | 2019-06-04 | Peter C. Salmon | Programmable charge storage arrays and associated manufacturing devices and systems |
US11705687B2 (en) * | 2020-04-27 | 2023-07-18 | Honeywell International Inc. | Cascaded resonant optical phase modulators for enhanced sensitivity while preserving linearity |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3942048A (en) * | 1973-11-29 | 1976-03-02 | Jobin-Yvon | Piezoelectrically driven optical grating assemblies |
US4115747A (en) * | 1976-12-27 | 1978-09-19 | Heihachi Sato | Optical modulator using a controllable diffraction grating |
US4327966A (en) * | 1980-02-25 | 1982-05-04 | Bell Telephone Laboratories, Incorporated | Variable attenuator for laser radiation |
US4529620A (en) * | 1984-01-30 | 1985-07-16 | New York Institute Of Technology | Method of making deformable light modulator structure |
US4626920A (en) * | 1984-01-30 | 1986-12-02 | New York Institute Of Technology | Solid state light modulator structure |
US5459610A (en) * | 1992-04-28 | 1995-10-17 | The Board Of Trustees Of The Leland Stanford, Junior University | Deformable grating apparatus for modulating a light beam and including means for obviating stiction between grating elements and underlying substrate |
US5661592A (en) * | 1995-06-07 | 1997-08-26 | Silicon Light Machines | Method of making and an apparatus for a flat diffraction grating light valve |
US5699468A (en) * | 1996-06-28 | 1997-12-16 | Jds Fitel Inc. | Bragg grating variable optical attenuator |
US5841579A (en) * | 1995-06-07 | 1998-11-24 | Silicon Light Machines | Flat diffraction grating light valve |
US5999319A (en) * | 1997-05-02 | 1999-12-07 | Interscience, Inc. | Reconfigurable compound diffraction grating |
US6930817B2 (en) * | 2003-04-25 | 2005-08-16 | Palo Alto Research Center Incorporated | Configurable grating based on surface relief pattern for use as a variable optical attenuator |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4494826A (en) | 1979-12-31 | 1985-01-22 | Smith James L | Surface deformation image device |
US5124834A (en) | 1989-11-16 | 1992-06-23 | General Electric Company | Transferrable, self-supporting pellicle for elastomer light valve displays and method for making the same |
US5002360A (en) | 1989-12-20 | 1991-03-26 | North American Philips Corp. | Frequency doubling optical waveguide with active phase matching |
US5526172A (en) | 1993-07-27 | 1996-06-11 | Texas Instruments Incorporated | Microminiature, monolithic, variable electrical signal processor and apparatus including same |
US5867301A (en) | 1996-04-22 | 1999-02-02 | Engle; Craig D. | Phase modulating device |
US6097859A (en) | 1998-02-12 | 2000-08-01 | The Regents Of The University Of California | Multi-wavelength cross-connect optical switch |
US6421179B1 (en) | 1997-05-02 | 2002-07-16 | Interscience, Inc. | Wavelength division multiplexing system and method using a reconfigurable diffraction grating |
GB2363014B (en) | 1999-06-30 | 2002-02-13 | Marconi Comm Ltd | Optical System |
US6307663B1 (en) | 2000-01-26 | 2001-10-23 | Eastman Kodak Company | Spatial light modulator with conformal grating device |
JP4471520B2 (en) | 2000-09-22 | 2010-06-02 | 日本碍子株式会社 | Traveling waveform light modulator |
FI20010917A (en) | 2001-05-03 | 2002-11-04 | Nokia Corp | Electrically reconfigurable optical devices and methods for their formation |
US6778023B2 (en) | 2001-07-31 | 2004-08-17 | Nokia Corporation | Tunable filter and method of tuning a filter |
-
2004
- 2004-12-20 US US11/017,402 patent/US7054054B1/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3942048A (en) * | 1973-11-29 | 1976-03-02 | Jobin-Yvon | Piezoelectrically driven optical grating assemblies |
US4115747A (en) * | 1976-12-27 | 1978-09-19 | Heihachi Sato | Optical modulator using a controllable diffraction grating |
US4327966A (en) * | 1980-02-25 | 1982-05-04 | Bell Telephone Laboratories, Incorporated | Variable attenuator for laser radiation |
US4529620A (en) * | 1984-01-30 | 1985-07-16 | New York Institute Of Technology | Method of making deformable light modulator structure |
US4626920A (en) * | 1984-01-30 | 1986-12-02 | New York Institute Of Technology | Solid state light modulator structure |
US5459610A (en) * | 1992-04-28 | 1995-10-17 | The Board Of Trustees Of The Leland Stanford, Junior University | Deformable grating apparatus for modulating a light beam and including means for obviating stiction between grating elements and underlying substrate |
US5677783A (en) * | 1992-04-28 | 1997-10-14 | The Board Of Trustees Of The Leland Stanford, Junior University | Method of making a deformable grating apparatus for modulating a light beam and including means for obviating stiction between grating elements and underlying substrate |
US5661592A (en) * | 1995-06-07 | 1997-08-26 | Silicon Light Machines | Method of making and an apparatus for a flat diffraction grating light valve |
US5841579A (en) * | 1995-06-07 | 1998-11-24 | Silicon Light Machines | Flat diffraction grating light valve |
US5699468A (en) * | 1996-06-28 | 1997-12-16 | Jds Fitel Inc. | Bragg grating variable optical attenuator |
US5999319A (en) * | 1997-05-02 | 1999-12-07 | Interscience, Inc. | Reconfigurable compound diffraction grating |
US6930817B2 (en) * | 2003-04-25 | 2005-08-16 | Palo Alto Research Center Incorporated | Configurable grating based on surface relief pattern for use as a variable optical attenuator |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080042516A1 (en) * | 2006-08-08 | 2008-02-21 | Palo Alto Research Center Incorporated | Traveling wave grids with agitated surface using piezoelectric effect and acoustic traveling waves |
US7764005B2 (en) | 2006-08-08 | 2010-07-27 | Palo Alto Research Center Incorporated | Traveling wave grids with agitated surface using piezoelectric effect and acoustic traveling waves |
US20100219047A1 (en) * | 2006-08-08 | 2010-09-02 | Palo Alto Research Center Incorporated | Traveling wave grids with agitated surface using piezoelectric effect and acoustic traveling waves |
US7944115B2 (en) | 2006-08-08 | 2011-05-17 | Palo Alto Research Center Incorporated | Traveling wave grids with agitated surface using piezoelectric effect and acoustic traveling waves |
JP2019113625A (en) * | 2017-12-21 | 2019-07-11 | 日本電信電話株式会社 | Optical element |
Also Published As
Publication number | Publication date |
---|---|
US7054054B1 (en) | 2006-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7054054B1 (en) | Optical modulator with a traveling surface relief pattern | |
EP1471373B1 (en) | Configurable grating based on surface relief pattern for use as a variable optical modulator | |
US6556338B2 (en) | MEMS based variable optical attenuator (MBVOA) | |
US6453086B1 (en) | Piezoelectric optical switch device | |
FI111357B (en) | Electrically controllable sheet of varying thickness and method for its formation | |
EP0033070B1 (en) | Active waveguide element | |
US7013064B2 (en) | Freespace tunable optoelectronic device and method | |
US20030035611A1 (en) | Piezoelectric-optic switch and method of fabrication | |
US20050074204A1 (en) | Spectral plane method and apparatus for wavelength-selective optical switching | |
JP2001154122A (en) | Device and method for optical signal transmission using movable optical switching member | |
WO1997031442A1 (en) | Multiple reflection multiplexer and demultiplexer | |
US7411724B2 (en) | Electro-optic crystal, diffraction-based, beam-steering element | |
JP2005222056A (en) | One-by-n optical switch and optical switch module | |
DE19616934A1 (en) | Opto-acoustic switching device esp. for heterodyne interferometer | |
US6897995B2 (en) | Method and device for variable optical attenuator | |
US20020141039A1 (en) | Spatial light modulation | |
US7068904B2 (en) | Optical element with periodic structure | |
JP2008058344A (en) | All pass wavelength filter and light deflector | |
US20220382042A1 (en) | Electrostatic actuation for diffractive optical devices | |
US7079726B2 (en) | Microelectromechanical optical switch using bendable fibers to direct light signals | |
JP2005205578A (en) | Comb-teeth-shaped actuator | |
RU2498374C2 (en) | Optical switch for optical communication lines | |
Uma et al. | Electrostrictive elastomer based diffractive modulator for use as a variable optical attenuator | |
EP1251385A1 (en) | Optical-power coupling devices | |
Zhu et al. | Computing insertion loss in MEMS optical switches caused by non-flat mirrors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: PALO ALTO RESEARCH CENTER INCORPORATED, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SRINIVASAN, UMA;SHRADER, ERIC J.;MATUSIAK, ROBERT;REEL/FRAME:016115/0078 Effective date: 20041215 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.) |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.) |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20180530 |