US20060125885A1 - Layer with discontinuity over fluid slot - Google Patents
Layer with discontinuity over fluid slot Download PDFInfo
- Publication number
- US20060125885A1 US20060125885A1 US11/345,594 US34559406A US2006125885A1 US 20060125885 A1 US20060125885 A1 US 20060125885A1 US 34559406 A US34559406 A US 34559406A US 2006125885 A1 US2006125885 A1 US 2006125885A1
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- Prior art keywords
- slot
- discontinuity
- layer
- fluid
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000012530 fluid Substances 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000010304 firing Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 206010013642 Drooling Diseases 0.000 claims description 2
- 208000008630 Sialorrhea Diseases 0.000 claims description 2
- 230000005499 meniscus Effects 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 19
- 239000010409 thin film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000035882 stress Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000032798 delamination Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 field oxide Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14032—Structure of the pressure chamber
- B41J2/1404—Geometrical characteristics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14145—Structure of the manifold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49194—Assembling elongated conductors, e.g., splicing, etc.
- Y10T29/49195—Assembling elongated conductors, e.g., splicing, etc. with end-to-end orienting
- Y10T29/49197—Assembling elongated conductors, e.g., splicing, etc. with end-to-end orienting including fluid evacuating or pressurizing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49401—Fluid pattern dispersing device making, e.g., ink jet
Definitions
- the present invention relates to fluid ejection devices, and more particularly to a layer with a discontinuity over a fluid slot of a fluid ejection device.
- thermal actuated printheads tend to use resistive elements or the like to achieve ink expulsion
- mechanically actuated printheads tend to use piezoelectric transducers or the like.
- a representative thermal inkjet printhead has a plurality of thin film resistors provided on a semiconductor substrate.
- a nozzle layer is deposited over thin film layers on the substrate.
- the nozzle chamber layer defines firing chambers about each of the resistors, an orifice corresponding to each resistor, and an entrance to each firing chamber.
- ink is provided through a slot in the substrate and flows through an ink channel defined by the nozzle layer to the firing chamber.
- Actuation of a heater resistor by a “fire signal” causes ink in the corresponding firing chamber to be heated and expelled through the corresponding orifice.
- nozzle layer delamination may occur due to mechanical or thermal stresses.
- the nozzle layer has a different coefficient of thermal expansion than that of the semiconductor substrate.
- the thermal stresses may lead to delamination of the nozzle layer, or other thin film layers, ultimately leading to ink leakage and/or electrical shorts.
- the nozzle layer can undergo stresses due to nozzle layer shrinkage after curing of the layer, structural adhesive shrinkage during assembly of the nozzle layer, handling of the device, and thermal cycling of the fluid ejection device.
- a fluid ejection device comprises a substrate having a first surface, and a fluid slot in the first surface.
- the device further comprises a fluid ejector formed over the first surface of the substrate, and a chamber layer formed over the first surface of the substrate.
- the chamber layer defines a chamber about the fluid ejector, wherein fluid flows from the fluid slot towards the chamber to be ejected therefrom.
- the chamber layer has a discontinuity, wherein the discontinuity is positioned over the fluid slot.
- FIG. 1 illustrates a perspective view of an embodiment of a fluid ejection cartridge of the present invention
- FIG. 2 illustrates a cross-sectional view of an embodiment of a fluid ejection device taken through section 2 - 2 of FIG. 1 ;
- FIG. 3 illustrates a plan view of an embodiment of a fluid ejection device taken through section 3 - 3 of FIG. 2 ;
- FIG. 4 illustrates a plan view of an alternative embodiment of a fluid ejection device
- FIGS. 5-7 illustrate cross-sectional views showing a method of forming the fluid ejection device embodiment illustrated in FIG. 4 ;
- FIG. 8 illustrates a plan view of an additional embodiment of a fluid ejection device.
- FIG. 1 is a perspective view of an embodiment of a cartridge 10 having a fluid drop generator or fluid ejection device 14 , such as a printhead.
- the embodiment of FIG. 2 illustrates a cross-sectional view of the printhead 14 of FIG. 1 where a slot 122 is formed through a substrate 28 .
- Some of the embodiments used in forming the slot through a slot region (or slot area) in the substrate include abrasive sand blasting, wet etching, dry etching, DRIE, and UV laser machining.
- the substrate 28 is silicon.
- the substrate is one of the following: single crystalline silicon, polycrystalline silicon, gallium arsenide, glass, silica, ceramics, or a semiconducting material.
- single crystalline silicon polycrystalline silicon
- gallium arsenide glass
- silica silica
- ceramics or a semiconducting material.
- the various materials listed as possible substrate materials are not necessarily interchangeable and are selected depending upon the application for which they are to be used.
- a thin film stack (such as an active layer, an electrically conductive layer, or a layer with micro-electronics) is formed or deposited on a front or first side (or surface) of the substrate 102 .
- a capping layer 32 is formed over a first surface of the substrate.
- Capping layer 32 may be formed of a variety of different materials such as field oxide, silicon dioxide, aluminum oxide, silicon carbide, silicon nitride, and glass (PSG).
- a layer 30 is deposited or grown over the capping layer 32 .
- the layer 30 is one of titanium nitride, titanium tungsten, titanium, a titanium alloy, a metal nitride, tantalum aluminum, and aluminum silicone.
- a conductive layer 114 is formed by depositing conductive material over the layer 30 .
- the conductive material is formed of at least one of a variety of different materials including aluminum, aluminum with about 1 ⁇ 2% copper, copper, gold, and aluminum with 1 ⁇ 2% silicon, and may be deposited by any method, such as sputtering and evaporation.
- the conductive layer 114 is patterned and etched to form conductive traces.
- a resistive material 115 is deposited over the etched conductive material 114 .
- the resistive material is etched to form an ejection element 134 , such as a resistor, a heating element, or a bubble generator.
- resistive materials are known to those of skill in the art including tantalum aluminum, nickel chromium, and titanium nitride, which may optionally be doped with suitable impurities such as oxygen, nitrogen, and carbon, to adjust the resistivity of the material.
- an insulating passivation layer 117 is formed over the resistive material.
- Passivation layer 117 may be formed of any suitable material such as silicon dioxide, aluminum oxide, silicon carbide, silicon nitride, and glass.
- a cavitation layer 119 is added over the passivation layer 117 .
- the cavitation layer is tantalum.
- a top layer 124 is deposited over the cavitation layer 119 .
- the top layer 124 is a chamber layer comprised of a fast cross-linking polymer such as photoimagable epoxy (such as SU8 developed by IBM), photoimagable polymer or photosensitive silicone dielectrics, such as SINR-3010 manufactured by ShinEtsuTM.
- the top layer 124 is made of a blend of organic polymers which is substantially inert to the corrosive action of ink. Polymers suitable for this purpose include products sold under the trademarks VACREL and RISTON by E. I. DuPont de Nemours and Co. of Wilmington, Del.
- the chamber layer 124 defines a firing chamber 132 where fluid is heated by the corresponding ejection element 134 and defines a nozzle orifice 126 through which the heated fluid is ejected. Fluid flows through the slot 122 and into the firing chamber 132 via channels formed in the chamber layer 124 . Propagation of a current or a “fire signal” through the resistor causes fluid in the corresponding firing chamber to be heated and expelled through the corresponding nozzle 126 .
- an orifice layer having the orifices 126 is applied over the chamber layer 124 .
- Embodiments of the present invention include having any number and type of layers formed or deposited over the substrate, depending upon the application.
- the nozzle orifices 126 are arranged in rows located on both sides of the slot 122 .
- the nozzle orifices, and corresponding firing chambers are staggered from each other across the slot.
- a firing chamber in the printhead that is staggered across the slot from the firing chamber 132 is shown in dashed lines.
- a discontinuity 130 is in the layer 124 , such as a gap, a stress relieving slot, or an aperture.
- the discontinuity 130 provides a means for alleviating stress and strain in the layer 124 .
- a force in a z-direction (or vertical direction) on the substrate 28 and the layer 124 may move longitudinal sides of slot 122 vertically with respect to each other. Consequently, in this embodiment, the top layer 124 may move and may tend to peel or delaminate from the underneath layers.
- the discontinuity 130 tends to enable the top layer to more easily move with the respective longitudinal sides of the slotted substrate.
- the discontinuity 130 is a gap that can have a width of up to about 16 microns. In another embodiment, the discontinuity has a width that is minimized. In yet another embodiment, the discontinuity has a width of about 0-2 microns, wherein longitudinal sides of the discontinuity 130 are touching at least in some areas along the gap (not shown in this embodiment). In other embodiments, the width is about 6, 8, 10, or 12 microns, depending upon the application.
- the discontinuity has a width such that fluid drool or back pressure from the discontinuity is minimized or mitigated.
- the discontinuity has a width such that a fluid meniscus (capillary resistance) holds the fluid within the top layer, and keeps the fluid from drooling out of the top layer.
- the dimensions are specific to the surface tension of the fluid and the surface properties of the polymer film used in the fluid ejection device.
- the layer 124 has a first surface 124 a , and a second opposite surface 124 b . In this embodiment shown, the discontinuity 130 extends from the first surface to the second surface.
- ends 131 of discontinuity 130 are rounded similar to the rounded ends 123 of the slot 122 .
- a length of the discontinuity 130 is about the same as a length of the fluid slot. Ends 123 of the fluid slot are shown in FIG. 3 .
- a length of the longitudinal side of the slot is substantially the same as the distance from slot end to slot end 123 .
- the discontinuity 130 has a length such that the layer 124 substantially maintains adhesiveness to the thin film layers underneath, and fluid drool is minimized.
- the discontinuity is as long as the trench such that the discontinuity is effective in mitigating mechanical stresses in the chamber layer.
- the discontinuity 130 extends longer than the length of the slot 122 and shorter than the length of the slot, depending upon the application (embodiments not shown).
- the discontinuity 130 is located in between longitudinal sides of the slot 122 .
- the discontinuity 130 in the layer 124 is substantially centered over the slot.
- the slit is a closed slit.
- longitudinal sides of the slit are substantially in contact with each other along a length of the slit.
- FIGS. 5-7 illustrate an embodiment of forming the fluid ejection device having the discontinuity 130 or the slit 130 a in the layer 124 , in accordance with the present invention.
- a material 124 a for forming the top layer 124 is formed or deposited over the thin film stack.
- the material 124 a is masked with at least one mask 210 and then exposed to varying levels of radiation to define the chamber layer 124 .
- the masks allow for controlling the entrance diameter to the firing chamber, the exit diameter of the orifice, the firing chamber volume based on the orifice layer height, as well as the volume of the discontinuity.
- at least one of the mask shapes in a plan view is similar to the plan view shown in FIG. 3 .
- the at least one mask 210 may have different widths for forming the discontinuity 130 / 130 a , depending upon the width of the discontinuity desired.
- the slit is formed using the negative photoresist qualities of the chamber layer material.
- the material 124 a is exposed to differing intensity levels of radiation 235 , 236 along its outer surface, depending upon the shape of the chamber layer 124 desired.
- electromagnetic radiation is used to cross-link a photoimagable material layer using the at least one mask 210 .
- a more detailed example of exposing a material to differing intensity levels of radiation to form a desired layer shape is set forth in commonly assigned U.S. Pat. No. 6,162,589.
- the discontinuity grows wider than the mask design.
- the slit 130 a is formed in the layer 124 , and the material 124 a for forming the layer 124 is removed through a developing method. After removing this material, the fluid path through the slot, and chamber layer chamber and orifice is formed.
- the discontinuity 130 is formed in a similar manner, however, the at least one mask is/are slightly different, accordingly.
- FIG. 8 An additional embodiment is shown in FIG. 8 , wherein there are multiple discontinuities 130 , such as an expansion grate, in the chamber layer 124 .
- the multiple discontinuities are substantially parallel to each other along the length of the slot.
- the location and number of discontinuities are not so limited. For example, there may be three or more discontinuities spread out over the suspended portion of the chamber layer.
- the discontinuities of FIG. 8 may be similar to the discontinuities 130 a , as discussed herein. It is therefore to be understood that this invention may be practiced otherwise than as specifically described.
- the present invention is not limited to thermally actuated printheads, but may also include, for example, piezoelectric activated printheads, and other mechanically actuated printheads, as well as other applications having a thin suspended polymer film.
- Methods of alleviating stress in a thin suspended polymer film may also be applied to micro-electromechanical systems (MEMS devices).
- MEMS devices micro-electromechanical systems
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Abstract
In one embodiment, a fluid ejection device comprises a substrate having a first surface, and a fluid slot in the first surface. The device further comprises a fluid ejector formed over the first surface of the substrate, and a chamber layer formed over the first surface of the substrate. The chamber layer defines a chamber about the fluid ejector, wherein fluid flows from the fluid slot towards the to be ejected therefrom. The chamber layer has a discontinuity, wherein the discontinuity is positioned over the fluid slot.
Description
- The present invention relates to fluid ejection devices, and more particularly to a layer with a discontinuity over a fluid slot of a fluid ejection device.
- Various inkjet printing arrangements are known in the art and include both thermally actuated printheads and mechanically actuated printheads. Thermal actuated printheads tend to use resistive elements or the like to achieve ink expulsion, while mechanically actuated printheads tend to use piezoelectric transducers or the like.
- A representative thermal inkjet printhead has a plurality of thin film resistors provided on a semiconductor substrate. A nozzle layer is deposited over thin film layers on the substrate. The nozzle chamber layer defines firing chambers about each of the resistors, an orifice corresponding to each resistor, and an entrance to each firing chamber. Often, ink is provided through a slot in the substrate and flows through an ink channel defined by the nozzle layer to the firing chamber. Actuation of a heater resistor by a “fire signal” causes ink in the corresponding firing chamber to be heated and expelled through the corresponding orifice.
- Continued adhesion between the nozzle layer and the thin film layers is desired. With printhead substrate dies, especially those that are larger-sized or that have high aspect ratios, unwanted warpage, and thus nozzle layer delamination, may occur due to mechanical or thermal stresses. For example, often, the nozzle layer has a different coefficient of thermal expansion than that of the semiconductor substrate. The thermal stresses may lead to delamination of the nozzle layer, or other thin film layers, ultimately leading to ink leakage and/or electrical shorts. In an additional example, when the dies on the assembled wafer are separated, delamination may occur. In additional and/or alternative examples, the nozzle layer can undergo stresses due to nozzle layer shrinkage after curing of the layer, structural adhesive shrinkage during assembly of the nozzle layer, handling of the device, and thermal cycling of the fluid ejection device.
- In one embodiment, a fluid ejection device comprises a substrate having a first surface, and a fluid slot in the first surface. The device further comprises a fluid ejector formed over the first surface of the substrate, and a chamber layer formed over the first surface of the substrate. The chamber layer defines a chamber about the fluid ejector, wherein fluid flows from the fluid slot towards the chamber to be ejected therefrom. The chamber layer has a discontinuity, wherein the discontinuity is positioned over the fluid slot.
-
FIG. 1 illustrates a perspective view of an embodiment of a fluid ejection cartridge of the present invention; -
FIG. 2 illustrates a cross-sectional view of an embodiment of a fluid ejection device taken through section 2-2 ofFIG. 1 ; -
FIG. 3 illustrates a plan view of an embodiment of a fluid ejection device taken through section 3-3 ofFIG. 2 ; -
FIG. 4 illustrates a plan view of an alternative embodiment of a fluid ejection device; -
FIGS. 5-7 illustrate cross-sectional views showing a method of forming the fluid ejection device embodiment illustrated inFIG. 4 ; and -
FIG. 8 illustrates a plan view of an additional embodiment of a fluid ejection device. -
FIG. 1 is a perspective view of an embodiment of acartridge 10 having a fluid drop generator orfluid ejection device 14, such as a printhead. The embodiment ofFIG. 2 illustrates a cross-sectional view of theprinthead 14 ofFIG. 1 where aslot 122 is formed through asubstrate 28. Some of the embodiments used in forming the slot through a slot region (or slot area) in the substrate include abrasive sand blasting, wet etching, dry etching, DRIE, and UV laser machining. - In one embodiment, the
substrate 28 is silicon. In various embodiments, the substrate is one of the following: single crystalline silicon, polycrystalline silicon, gallium arsenide, glass, silica, ceramics, or a semiconducting material. The various materials listed as possible substrate materials are not necessarily interchangeable and are selected depending upon the application for which they are to be used. - In the embodiment of
FIG. 2 , a thin film stack (such as an active layer, an electrically conductive layer, or a layer with micro-electronics) is formed or deposited on a front or first side (or surface) of the substrate 102. In one embodiment, acapping layer 32 is formed over a first surface of the substrate.Capping layer 32 may be formed of a variety of different materials such as field oxide, silicon dioxide, aluminum oxide, silicon carbide, silicon nitride, and glass (PSG). In this embodiment, alayer 30 is deposited or grown over thecapping layer 32. In a particular embodiment, thelayer 30 is one of titanium nitride, titanium tungsten, titanium, a titanium alloy, a metal nitride, tantalum aluminum, and aluminum silicone. - In this embodiment, a
conductive layer 114 is formed by depositing conductive material over thelayer 30. The conductive material is formed of at least one of a variety of different materials including aluminum, aluminum with about ½% copper, copper, gold, and aluminum with ½% silicon, and may be deposited by any method, such as sputtering and evaporation. Theconductive layer 114 is patterned and etched to form conductive traces. After forming the conductor traces, aresistive material 115 is deposited over the etchedconductive material 114. The resistive material is etched to form anejection element 134, such as a resistor, a heating element, or a bubble generator. A variety of suitable resistive materials are known to those of skill in the art including tantalum aluminum, nickel chromium, and titanium nitride, which may optionally be doped with suitable impurities such as oxygen, nitrogen, and carbon, to adjust the resistivity of the material. - As shown in the embodiment of
FIG. 2 , aninsulating passivation layer 117 is formed over the resistive material.Passivation layer 117 may be formed of any suitable material such as silicon dioxide, aluminum oxide, silicon carbide, silicon nitride, and glass. In this embodiment, acavitation layer 119 is added over thepassivation layer 117. In a particular embodiment, the cavitation layer is tantalum. - In one embodiment, a
top layer 124 is deposited over thecavitation layer 119. In one embodiment, thetop layer 124 is a chamber layer comprised of a fast cross-linking polymer such as photoimagable epoxy (such as SU8 developed by IBM), photoimagable polymer or photosensitive silicone dielectrics, such as SINR-3010 manufactured by ShinEtsu™. In another embodiment, thetop layer 124 is made of a blend of organic polymers which is substantially inert to the corrosive action of ink. Polymers suitable for this purpose include products sold under the trademarks VACREL and RISTON by E. I. DuPont de Nemours and Co. of Wilmington, Del. - In a particular embodiment, the
chamber layer 124 defines afiring chamber 132 where fluid is heated by thecorresponding ejection element 134 and defines anozzle orifice 126 through which the heated fluid is ejected. Fluid flows through theslot 122 and into thefiring chamber 132 via channels formed in thechamber layer 124. Propagation of a current or a “fire signal” through the resistor causes fluid in the corresponding firing chamber to be heated and expelled through thecorresponding nozzle 126. In another embodiment, an orifice layer having theorifices 126 is applied over thechamber layer 124. - An example of the physical arrangement of the chamber layer, and thin film substructure is illustrated at page 44 of the Hewlett-Packard Journal of February 1994. Further examples of ink jet printheads are set forth in commonly assigned U.S. Pat. No. 4,719,477, U.S. Pat. No. 5,317,346, and U.S. Pat. No. 6,162,589. Embodiments of the present invention include having any number and type of layers formed or deposited over the substrate, depending upon the application.
- As shown more clearly in the
printhead 14 ofFIG. 3 , thenozzle orifices 126 are arranged in rows located on both sides of theslot 122. In one embodiment, the nozzle orifices, and corresponding firing chambers are staggered from each other across the slot. InFIG. 2 , a firing chamber in the printhead that is staggered across the slot from thefiring chamber 132 is shown in dashed lines. - As shown in the embodiment of
FIG. 2 , adiscontinuity 130 is in thelayer 124, such as a gap, a stress relieving slot, or an aperture. In one embodiment, thediscontinuity 130 provides a means for alleviating stress and strain in thelayer 124. In a particular embodiment, a force in a z-direction (or vertical direction) on thesubstrate 28 and thelayer 124 may move longitudinal sides ofslot 122 vertically with respect to each other. Consequently, in this embodiment, thetop layer 124 may move and may tend to peel or delaminate from the underneath layers. In this embodiment, thediscontinuity 130 tends to enable the top layer to more easily move with the respective longitudinal sides of the slotted substrate. - In one embodiment, the
discontinuity 130 is a gap that can have a width of up to about 16 microns. In another embodiment, the discontinuity has a width that is minimized. In yet another embodiment, the discontinuity has a width of about 0-2 microns, wherein longitudinal sides of thediscontinuity 130 are touching at least in some areas along the gap (not shown in this embodiment). In other embodiments, the width is about 6, 8, 10, or 12 microns, depending upon the application. - In an additional embodiment, the discontinuity has a width such that fluid drool or back pressure from the discontinuity is minimized or mitigated. In another additional embodiment, the discontinuity has a width such that a fluid meniscus (capillary resistance) holds the fluid within the top layer, and keeps the fluid from drooling out of the top layer. In yet another embodiment, the dimensions are specific to the surface tension of the fluid and the surface properties of the polymer film used in the fluid ejection device. In this embodiment, the
layer 124 has afirst surface 124 a, and a secondopposite surface 124 b. In this embodiment shown, thediscontinuity 130 extends from the first surface to the second surface. - As shown in the embodiment of
FIG. 3 , ends 131 ofdiscontinuity 130 are rounded similar to the rounded ends 123 of theslot 122. In this embodiment shown, a length of thediscontinuity 130 is about the same as a length of the fluid slot.Ends 123 of the fluid slot are shown inFIG. 3 . In this embodiment, a length of the longitudinal side of the slot is substantially the same as the distance from slot end to slotend 123. In another embodiment, thediscontinuity 130 has a length such that thelayer 124 substantially maintains adhesiveness to the thin film layers underneath, and fluid drool is minimized. In yet another embodiment, the discontinuity is as long as the trench such that the discontinuity is effective in mitigating mechanical stresses in the chamber layer. In alternative embodiments, thediscontinuity 130 extends longer than the length of theslot 122 and shorter than the length of the slot, depending upon the application (embodiments not shown). - In this embodiment, the
discontinuity 130 is located in between longitudinal sides of theslot 122. In a particular embodiment, thediscontinuity 130 in thelayer 124 is substantially centered over the slot. - As shown in the alternative embodiment of
FIG. 4 , there is a discontinuity or slit 130 a in thelayer 124. In a particular embodiment, the slit is a closed slit. In another embodiment, longitudinal sides of the slit are substantially in contact with each other along a length of the slit. -
FIGS. 5-7 illustrate an embodiment of forming the fluid ejection device having thediscontinuity 130 or theslit 130 a in thelayer 124, in accordance with the present invention. As shown in the embodiment ofFIG. 5 , a material 124 a for forming thetop layer 124 is formed or deposited over the thin film stack. - As shown in the embodiment of
FIG. 6 , the material 124 a is masked with at least onemask 210 and then exposed to varying levels of radiation to define thechamber layer 124. The masks allow for controlling the entrance diameter to the firing chamber, the exit diameter of the orifice, the firing chamber volume based on the orifice layer height, as well as the volume of the discontinuity. For example, for thediscontinuity 130 in the embodiment ofFIG. 3 , at least one of the mask shapes in a plan view is similar to the plan view shown inFIG. 3 . In this embodiment, the lines forming thediscontinuity 130, theslot 122, thechambers 132, and thenozzles 126 inFIG. 3 can also be interpreted as at least one of the masks used in defining thechamber layer 124. Similarly, for thediscontinuity 130 a in the embodiment ofFIG. 4 , at least one of the mask shapes in a plan view is similar to the plan view shown inFIG. 4 . In particular, the lines forming theslit 130 a, theslot 122, and thenozzles 126 inFIG. 4 can also be interpreted as at least one of the masks used in defining thechamber layer 124. Accordingly, the at least onemask 210 may have different widths for forming thediscontinuity 130/130 a, depending upon the width of the discontinuity desired. In one embodiment, the slit is formed using the negative photoresist qualities of the chamber layer material. - In this embodiment shown in
FIG. 6 , the material 124 a is exposed to differing intensity levels ofradiation chamber layer 124 desired. In one embodiment, electromagnetic radiation is used to cross-link a photoimagable material layer using the at least onemask 210. A more detailed example of exposing a material to differing intensity levels of radiation to form a desired layer shape is set forth in commonly assigned U.S. Pat. No. 6,162,589. - In one embodiment, after the material 124 a is exposed to the irradation, there is about a 6% shrinkage by volume in the
layer 124 compared with the original mask. In this embodiment, the discontinuity grows wider than the mask design. - As shown in the embodiment of
FIG. 7 , theslit 130 a is formed in thelayer 124, and the material 124 a for forming thelayer 124 is removed through a developing method. After removing this material, the fluid path through the slot, and chamber layer chamber and orifice is formed. In another embodiment, thediscontinuity 130 is formed in a similar manner, however, the at least one mask is/are slightly different, accordingly. - An additional embodiment is shown in
FIG. 8 , wherein there aremultiple discontinuities 130, such as an expansion grate, in thechamber layer 124. In this embodiment, the multiple discontinuities are substantially parallel to each other along the length of the slot. In the embodiment shown, there are two discontinuities near the trench shelf. However, the location and number of discontinuities are not so limited. For example, there may be three or more discontinuities spread out over the suspended portion of the chamber layer. In further embodiments, the discontinuities ofFIG. 8 may be similar to thediscontinuities 130 a, as discussed herein. It is therefore to be understood that this invention may be practiced otherwise than as specifically described. For example, the present invention is not limited to thermally actuated printheads, but may also include, for example, piezoelectric activated printheads, and other mechanically actuated printheads, as well as other applications having a thin suspended polymer film. Methods of alleviating stress in a thin suspended polymer film may also be applied to micro-electromechanical systems (MEMS devices). Thus, the present embodiments of the invention should be considered in all respects as illustrative and not restrictive, the scope of the invention to be indicated by the appended claims rather than the foregoing description. Where the claims recite “a” or “a first” element of the equivalent thereof, such claims should be understood to include incorporation of one or more such elements, neither requiring nor excluding two or more such elements.
Claims (13)
1.-13. (canceled)
14. A method of forming a fluid ejection device comprising:
forming a slot through a substrate;
forming an ejection element upon the substrate along a side of the slot;
defining a firing chamber that surrounds the ejection element, wherein the firing chamber is defined by a chamber layer;
defining an orifice with the chamber layer, wherein the orifice corresponds to the ejection element and the firing chamber; and
defining one or more slits through the chamber layer, wherein the one or more slits are positioned over the slot from one end to an opposite end of the slot, and where at least one slit of the one or more slits is a closed slit.
15. A method of forming a fluid ejection device comprising:
forming stress relieving slots through a chamber layer of a fluid ejection device,
wherein the stress relieving slots are formed directly over a fluid slot in a substrate,
wherein capillary and meniscus properties of the fluid mitigate fluid drool through the stress relieving slots.
16. A method of forming a fluid ejection device comprising:
forming a slot through a substrate;
forming an ejection element upon the substrate along a side of the slot;
forming a chamber layer over the substrate and ejection element; and
exposing the chamber layer to define a firing chamber that surrounds the ejection element, an orifice corresponding to the ejection element, and a discontinuity therein over the slot.
17. The method of claim 16 wherein the discontinuity is positioned over the slot from one end to an opposite end of the slot.
18. The method of claim 16 wherein the discontinuity has two longitudinal sides that correspond to a length of longitudinal sides of the slot, wherein at least in some areas along the discontinuity the two longitudinal sides of the discontinuity are in contact with each other.
19. The method of claim 16 wherein the discontinuity extends from a first surface of the chamber layer to a second opposing surface of the chamber layer.
20.-23. (canceled)
24. The method of claim 16 further including masking the chamber layer prior to the exposing.
25. The method of claim 16 where the discontinuity is defined as a closed slit.
26. The method of claim 16 where the discontinuity is defined to mitigate fluid drooling through the discontinuity.
27. The method of claim 14 where the closed slit is defined with longitudinal sides that are substantially in contact with each other along a length of the closed slit.
28. The method of claim 14 where the one or more slits are defined to form an expansion grate.
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US11/345,594 US20060125885A1 (en) | 2002-04-30 | 2006-02-01 | Layer with discontinuity over fluid slot |
Applications Claiming Priority (3)
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US10/135,162 US6527368B1 (en) | 2002-04-30 | 2002-04-30 | Layer with discontinuity over fluid slot |
US10/327,289 US7024768B2 (en) | 2002-04-30 | 2002-12-21 | Fluid ejection device having a layer with a discontinuity |
US11/345,594 US20060125885A1 (en) | 2002-04-30 | 2006-02-01 | Layer with discontinuity over fluid slot |
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US10/327,289 Division US7024768B2 (en) | 2002-04-30 | 2002-12-21 | Fluid ejection device having a layer with a discontinuity |
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US10/327,289 Expired - Fee Related US7024768B2 (en) | 2002-04-30 | 2002-12-21 | Fluid ejection device having a layer with a discontinuity |
US11/345,594 Abandoned US20060125885A1 (en) | 2002-04-30 | 2006-02-01 | Layer with discontinuity over fluid slot |
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US10/327,289 Expired - Fee Related US7024768B2 (en) | 2002-04-30 | 2002-12-21 | Fluid ejection device having a layer with a discontinuity |
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US6527368B1 (en) * | 2002-04-30 | 2003-03-04 | Hewlett-Packard Company | Layer with discontinuity over fluid slot |
TW561068B (en) * | 2002-11-29 | 2003-11-11 | Au Optronics Corp | Nozzle head with excellent corrosion resistance for dry etching process and anti-corrosion method thereof |
US6984015B2 (en) * | 2003-08-12 | 2006-01-10 | Lexmark International, Inc. | Ink jet printheads and method therefor |
US7083268B2 (en) * | 2003-10-15 | 2006-08-01 | Hewlett-Packard Development Company, L.P. | Slotted substrates and methods of making |
US7163640B2 (en) * | 2004-05-21 | 2007-01-16 | Hewlett-Packard Development Company, L.P. | Methods and systems for laser processing |
EP1893410B1 (en) * | 2005-05-31 | 2016-11-30 | Sicpa Holding Sa | Nozzle plate for an ink jet print head comprising stress relieving elements |
US7265891B1 (en) * | 2006-06-20 | 2007-09-04 | Eclipse Energy Systems | Electrochromic device with self-forming ion transfer layer and lithium-fluoro-nitride electrolyte |
US7677695B2 (en) * | 2007-08-13 | 2010-03-16 | Hewlett-Packard Development Company, L.P. | Fluid transfer device including a die |
US8658110B2 (en) * | 2007-08-13 | 2014-02-25 | Hewlett-Packard Development Company, L.P. | Fluid delivery system |
JP2009137132A (en) * | 2007-12-05 | 2009-06-25 | Seiko Epson Corp | Liquid jet head and liquid jetting apparatus |
KR100932937B1 (en) | 2008-04-01 | 2009-12-21 | 삼성모바일디스플레이주식회사 | OLED display and manufacturing method thereof |
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Also Published As
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US6527368B1 (en) | 2003-03-04 |
US7024768B2 (en) | 2006-04-11 |
US20030202052A1 (en) | 2003-10-30 |
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