US20060011937A1 - Strain-controlled III-nitride light emitting device - Google Patents
Strain-controlled III-nitride light emitting device Download PDFInfo
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- US20060011937A1 US20060011937A1 US11/227,814 US22781405A US2006011937A1 US 20060011937 A1 US20060011937 A1 US 20060011937A1 US 22781405 A US22781405 A US 22781405A US 2006011937 A1 US2006011937 A1 US 2006011937A1
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- 239000000203 mixture Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims description 33
- 230000006911 nucleation Effects 0.000 claims description 14
- 238000010899 nucleation Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000005191 phase separation Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 230000006399 behavior Effects 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Definitions
- the present invention is related to III-nitride light emitting devices.
- LEDs light emitting diodes
- RCLEDs resonant cavity light emitting diodes
- VCSELs vertical cavity laser diodes
- edge emitting lasers are among the most efficient light sources currently available.
- Materials systems currently of interest in the manufacture of high-brightness light emitting devices capable of operation across the visible spectrum include Group III-V semiconductors, particularly binary, ternary, and quaternary alloys of gallium, aluminum, indium, and nitrogen, also referred to as III-nitride materials.
- III-nitride devices formed on conductive substrates may have the p- and n-contacts formed on opposite sides of the device.
- III-nitride devices are fabricated on insulating substrates, such as sapphire, with both contacts on the same side of the device. Such devices are mounted so light is extracted either through the contacts (known as an epitaxy-up device) or through a surface of the device opposite the contacts (known as a flip-chip device).
- FIG. 1 illustrates a conventional III-nitride LED.
- the device of FIG. 1 includes a GaN or AlN buffer layer 31 , an n-type GaN layer 32 , an InGaN active layer 33 , a p-type AlGaN layer 34 , and a p-type GaN layer 35 which are stacked sequentially on the top face of a sapphire substrate 30 .
- a portion of layers 33 , 34 , and 35 is removed by etching to expose a portion of n-type GaN layer 32 , then an n-side electrode 6 is formed on the exposed portion of n-type GaN layer 32 .
- a p-side electrode 5 is formed on the top face of remaining p-type GaN layer 35 .
- a ternary or quaternary light emitting layer is configured to control the degree of phase separation.
- the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%.
- control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
- FIG. 1 illustrates a prior art III-nitride LED.
- FIG. 2 is a plot of external quantum efficiency as a function of peak wavelength for a III-nitride LED.
- FIG. 3 is a plot of wall plug efficiency as a function of forward current for four devices emitting light at different wavelengths.
- FIG. 4 is a cross sectional view of a III-nitride device according to embodiments of the invention.
- FIG. 5 illustrates possible ranges for InN composition in the base region and light emitting layers of the device of FIG. 4 .
- FIGS. 6 and 7 illustrate a plan view and a cross sectional view of an arrangement of contacts on the device illustrated in FIG. 4 .
- FIG. 8 illustrates a packaged light emitting device
- a III-nitride device grown on sapphire or SiC such as the device illustrated in FIG. 1 typically have threading dislocation densities on the order of 5-50 ⁇ 10 8 cm ⁇ 2 .
- Such LEDs may exhibit the following undesirable behaviors.
- the internal quantum efficiency (IQE) defined as the number of photons generated within the active region of the device divided by the number of electrons supplied to the device, is generally highest for LEDs with light emitting layers that contain an InN composition of about 5 to 10%, resulting in a peak emission wavelength of about 400 nm. As the InN composition and peak emission wavelength increase, the IQE decreases.
- the IQE reaches almost zero for an InN composition of about 25%, corresponding to a peak emission wavelength longer than about 550 nm.
- the IQE also decreases. This behavior is illustrated in FIG. 2 , which is a plot of IQE as a function of wavelength and InN composition.
- the data in FIG. 2 correspond to light emitting layers of a given thickness. As the thickness of the light emitting layer changes, the maximum external quantum efficiency may shift from the point illustrated in FIG. 2 .
- the efficiency of a III-nitride based LED of a given color also depends on drive current.
- the efficiency generally peaks at a relatively low current density and decreases rapidly as the current density increases. In general, the decrease in efficiency is strongest the longer the emission wavelength of the LED.
- FIG. 3 is a plot of wall plug efficiency, defined as optical power out of the device divided by electrical power supplied to the device, as a function of forward current for four devices with peak emission wavelengths ranging from 428 nm to 527 nm.
- One explanation for the decrease in efficiency as InN composition in the light emitting layers and current density increase may be phase separation of InGaN light emitting layers due to strain and lattice defects in the crystal.
- III-nitride light emitting devices are generally grown on substrates such as sapphire and SiC. Such substrates have a significant lattice- and coefficient-of-thermal-expansion-mismatch with III-nitride crystal layers. As a consequence, crystal imperfections, especially threading dislocations, are present at high density in the crystal layers grown on such substrates.
- III-nitride based devices are generally grown along the [0001] or “c” crystallographic axis resulting in (0001) or c-plane material.
- the lattice constants of III-nitride ternary alloys such as InGaN vary significantly with composition.
- InN and GaN are not fully miscible in an InGaN alloy.
- critical InN compositions exist as upper and lower limits defining a composition region that is energetically unfavorable.
- the above-described strain and lattice defects present in III-nitride layers tend to force InGaN layers grown too thick or with a composition in this “forbidden” range to phase separate into InN and GaN.
- Phase separation results in InGaN pockets with an InN composition above the upper and below the lower composition limit.
- Clusters of InN-rich InGaN material form that are separated by regions of material containing less InN than the average InN composition of the InGaN layer.
- Such InN-rich regions have been observed in the light emitting layers of devices having InGaN light emitting layers containing more than about 8% InN and grown on GaN base layers.
- InGaN light emitting layer with an average InN composition of 11% grown on GaN the inventors observed that one standard deviation in InN composition in the light emitting layer is 2% InN.
- the light emitting layer InN composition is expected to range from three standard deviations below the average to three standard deviations above the average, i.e. between 5% and 17% InN, a variation of 54% from the average.
- the highest InN composition actually observed was 22%, a variation of 100% from the average.
- InN composition in the light emitting layer For a device with an InGaN light emitting layer with an average InN composition of 20% grown on GaN, one standard deviation in InN composition in the light emitting layer is also observed to be 2% InN, resulting in an expected range between 14% and 26% InN, a variation of 30% from the average. The highest InN composition actually observed was 38%, a variation of 90% from the average.
- III-nitride light emitters with high quantum efficiency is often credited to the fact that the above-described InN-rich regions in the InGaN light emitting layers have a smaller band gap than the rest of the InGaN layers, and thus confine electrons and holes in the InN-rich regions, preventing non-radiative recombination at the crystal defects caused by growth on mismatched substrates.
- some degree of phase-separation in the InGaN light emitting layers may be necessary to achieve high radiative recombination efficiency.
- phase-separation is so significant that any benefit of phase-separation may be outweighed by problems introduced by phase-separation, as demonstrated by the undesirably low external quantum efficiency at high InN composition illustrated in FIG. 2 .
- FIG. 4 illustrates a III-nitride light emitting device according to embodiments of the invention.
- An n-type or undoped base region 52 is grown over substrate 50 .
- a nucleation region (not shown) is generally grown on substrate 50 before base region 52 is grown.
- the nucleation region includes one or more layers of polycrystalline or amorphous material.
- the beginning of base region 52 is the first single crystal material grown over the nucleation region.
- An n-type region 54 is disposed between base layer 52 and active region 55 .
- a p-type region 56 is formed over active region 55 .
- Each of base region 52 , n-type region 54 , active region 55 , and p-type region 56 may contain one or more layers of different thickness, composition, and dopant concentration.
- active region 55 may include one or more quantum well layers or light emitting layers surrounded by barrier layers of different composition.
- a portion of p-type region 56 and active region 55 is etched away to reveal a portion of n-type region 54 .
- P-contact 58 is formed on the remaining part of p-type region 56 and n-contact 57 is formed on the exposed portion of n-type region 54 .
- Light may be extracted through the top of the device by forming transparent contacts or contacts that cover a small portion of the top of the epitaxial structure.
- Light may be extracted through the bottom of the substrate of the device by making the contacts reflective, as is known in the art.
- at least one of base region 52 and n-type region must be thick enough and sufficiently doped to provide current spreading on the n-side of the active region.
- substrate 50 is conductive and one of the contacts is formed on the bottom of substrate 50 .
- the epitaxial layers 59 are bonded to a host substrate through a conductive interface to p-type region 56 , then growth substrate 50 is removed and n-contact 57 is formed on the surface exposed by growth substrate removal. Growth substrate removal is described in more detail in application Ser. No. 10/804,810, filed Mar. 19, 2004, titled “Photonic Crystal Light Emitting Device,” assigned to the assignee of the present invention, and incorporated herein by reference.
- base region 52 may be thinner than in the device of FIG. 4 . Though FIG.
- base region 52 may be p-type or undoped material.
- the characteristics of base region 52 and the light emitting layers of active region 55 are chosen to control phase-separation in the light emitting layers.
- the characteristics of base region 52 and the light emitting layers of active region 55 are chosen such that the InN composition at any point in a given light emitting layer is close to the average InN composition across the entire light emitting layer; in some embodiments, the InN composition at any point varies less than 20% from the average InN composition. The variation is preferably less than 10% from the average InN composition, and more preferably less than 5% from the average InN composition.
- the light emitting layers of the active region are prevented from phase-separating by controlling the mismatch in lattice constant between the light emitting layers and base region 52 .
- the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region is between about 1 and about 1.01.
- InGaN may be used in base region 52 to limit the lattice constant mismatch with the light emitting layers.
- lattice constant varies almost linearly with composition.
- the lattice constant is tied to the InN composition in the base region and, for a given InGaN light emitting layer of active region 52 , the base region InN composition may be selected to control the lattice constant mismatch.
- base region 52 includes at least one quaternary AlInGaN layer. The use of quaternary layers permits the lattice constant to be engineered independently of the band gap.
- FIG. 5 illustrates, for a given InGaN light emitting layer composition, acceptable lattice parameters for the base region, acceptable InN compositions for a GaN or InGaN base region, and acceptable InN compositions for a quaternary AlInGaN base region including 20% AlN.
- the preferred base region lattice constants and InN compositions lie on and above the dashed diagonal line in FIG. 5 .
- a device with a GaN base region 52 may have InGaN light emitting layers with an InN composition less than or equal to about 8%.
- a device emitting light at about 500 nm has an InN composition in the InGaN light emitting layers of about 15%.
- the lattice constant in the base region should be about 3.2 ⁇ or greater.
- the InN composition of an InGaN base region device should be at least 7%.
- the InN composition of an AlInGaN base region with 20% AlN should be at least 10%.
- a device emitting light at about 550 nm has an InN composition in the InGaN light emitting layers of about 20%.
- the lattice constant in the base region should be about 3.22 ⁇ or greater.
- the InN composition of an InGaN base region should be at least 12%.
- the InN composition of an AlInGaN base region with 20% AlN should be at least 14%.
- FIG. 5 shows acceptable InN compositions in a quaternary layer including 20% AlN as an example, it is to be understood that any quaternary layer composition having a lattice parameter above the dashed diagonal line in FIG. 5 may be used.
- Base region 52 is generally a thick region, for example, at least about one micron thick.
- Base region 52 sets the lattice constant for the layers grown above base region 52 including the light emitting layer or layers of the active region.
- the layers grown between base region 52 and the light emitting layers, and the light emitting layers themselves, are grown thin enough that they are strained.
- the strained state maintains the lattice constant of base region 52 in, for example, n-type region 54 , which spaces base region 52 from active region 55 , and the light emitting layers of active region 55 .
- an InGaN light emitting layer with 8% InN may have a thickness less than about 330 nm; an InGaN light emitting layer with 10% InN may have a thickness less than about 75 nm; and an InGaN light emitting layer with 14% InN may have a thickness less than about 30 nm.
- Controlling the mismatch in lattice constant between the light emitting layers and base region 52 to prevent phase separation may permit the use of thicker light emitting layers.
- the quantum wells in a multiple quantum well active region are typically limited to a thickness of about 5 nm for about 10% InN composition and to a thickness of about 3 nm for about 20% InN composition.
- thicker quantum wells may be used, for example about 5 nm for an InN composition of about 20%.
- a single, thick light emitting layer may be used, for example with a thickness between about 5 nm and about 300 nm.
- Base regions with appropriate lattice constants may be fabricated using known III-nitride growth techniques. When a SiC growth substrate is used, base region 52 may be grown directly on the substrate. When a sapphire growth substrate is used, base region 52 may be grown on a nucleation region.
- a base region 52 of appropriate lattice constant is grown over an InN-containing nucleation layer or layers.
- the nucleation layers closest to the substrate may have more indium than layers further from the substrate.
- the nucleation layers may be grown at a low temperature, for example between about 400° C. and about 650° C.
- a cap layer formed at higher temperature may be formed over the InN-containing nucleation layers.
- the growth of InN-containing nucleation layers is known in the art.
- an InGaN base region is grown by first growing a conventional low temperature (for example, 400° C. to 650° C.) GaN nucleation layer (for example, 150 ⁇ to 350 ⁇ thick) on a sapphire (0001) substrate. A base region of a thick (0.5-5 micron) InGaN film is then grown on top of the GaN nucleation layer. The resulting lattice parameter of this base region is determined by the InN composition in the InGaN film, since it is not strained to the underlying low temperature GaN nucleation layer.
- a conventional low temperature for example, 400° C. to 650° C.
- GaN nucleation layer for example, 150 ⁇ to 350 ⁇ thick
- Typical precursors for the high temperature InGaN film are tri-methyl indium (TMI) and tri-ethyl gallium (TEG) or tri-methyl gallium (TMG) in an N 2 ambient.
- TMI tri-methyl indium
- TAG tri-ethyl gallium
- TMG tri-methyl gallium
- the InN composition in the base region can be controlled by the growth temperature, e.g. ⁇ 975° C. for a ⁇ 3% InGaN film. Lowering the InGaN growth temperature will increase the InN incorporation and the in-plane lattice parameter.
- the InGaN film base region can be either undoped or doped.
- a base region of appropriate lattice constant is grown over a structure that “resets” the lattice constant of the device.
- a base region 52 of appropriate composition may be grown as an InN-containing coalescence layer grown over a GaN defect reduction layer or a Si-dosed GaN defect reduction layer. The growth of such coalescence layers and defect reduction layers are described in U.S. Pat. No. 6,630,692 to Goetz et al, which is assigned to the assignee of the present application and incorporated herein by reference.
- a device as described above, where the InN composition at any point in the light emitting layer varies less than 20% from the average InN composition, may require reduced dislocation densities, since the light emitting layers lack InN-rich regions which prevent non-radiative carrier recombination via defect states.
- devices according to FIG. 4 may require dislocation densities less than about 5 ⁇ 10 8 cm ⁇ 2 .
- Devices with dislocation densities less than about 5 ⁇ 10 8 cm ⁇ 2 may be grown by, for example, techniques such as epitaxial lateral overgrowth, pendeoepitaxy, or cantilever epitaxy.
- FIG. 6 is a plan view of a large junction device (i.e. an area greater than or equal to one square millimeter).
- FIG. 7 is a cross section of the device shown in FIG. 6 , taken along axis 70 .
- FIGS. 6 and 7 illustrate an arrangement of contacts that may be used with any of the epitaxial structures 59 illustrated and described in FIG. 4 and accompanying text.
- the active region of epitaxial structure 59 is separated into four regions separated by three trenches in which n-contacts 57 are formed. Each region is connected to a submount by four p-submount connections 24 formed on p-contact 58 .
- N-contact 57 surrounds the four active regions.
- N-contact 57 is connected to a submount by six n-submount connections 23 .
- the n- and p-contacts may be electrically isolated by an insulating layer 22 .
- the device illustrated in FIGS. 6 and 7 is typically mounted in flip chip configuration, such that most of the light exit
- FIG. 8 is an exploded view of a packaged light emitting device.
- a heat-sinking slug 100 is placed into an insert-molded lead frame 106 .
- the insert-molded lead frame 106 is, for example, a filled plastic material molded around a metal frame that provides an electrical path.
- Slug 100 may include an optional reflector cup 102 .
- the light emitting device die 104 which may be any of the devices described above, is mounted directly or indirectly via a thermally conducting submount 103 to slug 100 .
- a cover 108 which may be an optical lens, may be added.
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Abstract
Description
- This application is a division of application Ser. No. 10/830,202, filed Apr. 21, 2004 and incorporated herein by reference.
- 1. Field of the Invention
- The present invention is related to III-nitride light emitting devices.
- 2. Description of Related Art
- Semiconductor light-emitting devices including light emitting diodes (LEDs), resonant cavity light emitting diodes (RCLEDs), vertical cavity laser diodes (VCSELs), and edge emitting lasers are among the most efficient light sources currently available. Materials systems currently of interest in the manufacture of high-brightness light emitting devices capable of operation across the visible spectrum include Group III-V semiconductors, particularly binary, ternary, and quaternary alloys of gallium, aluminum, indium, and nitrogen, also referred to as III-nitride materials. Typically, III-nitride light emitting devices are fabricated by epitaxially growing a stack of semiconductor layers of different compositions and dopant concentrations on a sapphire, silicon carbide, III-nitride, or other suitable substrate by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxial techniques. The stack often includes one or more n-type layers doped with, for example, Si, formed over the substrate, a light emitting or active region formed over the n-type layer or layers, and one or more p-type layers doped with, for example, Mg, formed over the active region. III-nitride devices formed on conductive substrates may have the p- and n-contacts formed on opposite sides of the device. Often, III-nitride devices are fabricated on insulating substrates, such as sapphire, with both contacts on the same side of the device. Such devices are mounted so light is extracted either through the contacts (known as an epitaxy-up device) or through a surface of the device opposite the contacts (known as a flip-chip device).
-
FIG. 1 illustrates a conventional III-nitride LED. The device ofFIG. 1 includes a GaN orAlN buffer layer 31, an n-type GaN layer 32, an InGaN active layer 33, a p-type AlGaN layer 34, and a p-type GaN layer 35 which are stacked sequentially on the top face of asapphire substrate 30. A portion oflayers 33, 34, and 35 is removed by etching to expose a portion of n-type GaN layer 32, then an n-side electrode 6 is formed on the exposed portion of n-type GaN layer 32. A p-side electrode 5 is formed on the top face of remaining p-type GaN layer 35. - In accordance with embodiments of the invention, in a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
-
FIG. 1 illustrates a prior art III-nitride LED. -
FIG. 2 is a plot of external quantum efficiency as a function of peak wavelength for a III-nitride LED. -
FIG. 3 is a plot of wall plug efficiency as a function of forward current for four devices emitting light at different wavelengths. -
FIG. 4 is a cross sectional view of a III-nitride device according to embodiments of the invention. -
FIG. 5 illustrates possible ranges for InN composition in the base region and light emitting layers of the device ofFIG. 4 . -
FIGS. 6 and 7 illustrate a plan view and a cross sectional view of an arrangement of contacts on the device illustrated inFIG. 4 . -
FIG. 8 illustrates a packaged light emitting device. - A III-nitride device grown on sapphire or SiC such as the device illustrated in
FIG. 1 , typically have threading dislocation densities on the order of 5-50×108 cm−2. Such LEDs may exhibit the following undesirable behaviors. First, the internal quantum efficiency (IQE), defined as the number of photons generated within the active region of the device divided by the number of electrons supplied to the device, is generally highest for LEDs with light emitting layers that contain an InN composition of about 5 to 10%, resulting in a peak emission wavelength of about 400 nm. As the InN composition and peak emission wavelength increase, the IQE decreases. For some devices, the IQE reaches almost zero for an InN composition of about 25%, corresponding to a peak emission wavelength longer than about 550 nm. For light emitting layers with less than about 5% InN composition (peak emission wavelength shorter than about 400 nm), the IQE also decreases. This behavior is illustrated inFIG. 2 , which is a plot of IQE as a function of wavelength and InN composition. The data inFIG. 2 correspond to light emitting layers of a given thickness. As the thickness of the light emitting layer changes, the maximum external quantum efficiency may shift from the point illustrated inFIG. 2 . - Second, the efficiency of a III-nitride based LED of a given color also depends on drive current. The efficiency generally peaks at a relatively low current density and decreases rapidly as the current density increases. In general, the decrease in efficiency is strongest the longer the emission wavelength of the LED. This behavior is illustrated in
FIG. 3 , which is a plot of wall plug efficiency, defined as optical power out of the device divided by electrical power supplied to the device, as a function of forward current for four devices with peak emission wavelengths ranging from 428 nm to 527 nm. - One explanation for the decrease in efficiency as InN composition in the light emitting layers and current density increase may be phase separation of InGaN light emitting layers due to strain and lattice defects in the crystal.
- III-nitride light emitting devices are generally grown on substrates such as sapphire and SiC. Such substrates have a significant lattice- and coefficient-of-thermal-expansion-mismatch with III-nitride crystal layers. As a consequence, crystal imperfections, especially threading dislocations, are present at high density in the crystal layers grown on such substrates. In addition, III-nitride based devices are generally grown along the [0001] or “c” crystallographic axis resulting in (0001) or c-plane material. The lattice constants of III-nitride ternary alloys such as InGaN vary significantly with composition. In the case of (0001) InGaN, the lattice mismatch between GaN and InN is 11%. As a consequence, thin InGaN light emitting layers with low InN composition grown on a GaN base layer are compressively strained. Though the above discussion refers to c-plane III-nitride devices, the concepts and embodiments described herein may be equally applicable to III-nitride crystals of other orientations, such as a-plane and m-plane. Accordingly, the invention is not limited to (0001) devices.
- InN and GaN are not fully miscible in an InGaN alloy. At a given set of growth conditions, critical InN compositions exist as upper and lower limits defining a composition region that is energetically unfavorable. The above-described strain and lattice defects present in III-nitride layers tend to force InGaN layers grown too thick or with a composition in this “forbidden” range to phase separate into InN and GaN. Phase separation results in InGaN pockets with an InN composition above the upper and below the lower composition limit. Clusters of InN-rich InGaN material form that are separated by regions of material containing less InN than the average InN composition of the InGaN layer. Such InN-rich regions have been observed in the light emitting layers of devices having InGaN light emitting layers containing more than about 8% InN and grown on GaN base layers. For example, in a device with an InGaN light emitting layer with an average InN composition of 11% grown on GaN, the inventors observed that one standard deviation in InN composition in the light emitting layer is 2% InN. The light emitting layer InN composition is expected to range from three standard deviations below the average to three standard deviations above the average, i.e. between 5% and 17% InN, a variation of 54% from the average. The highest InN composition actually observed was 22%, a variation of 100% from the average. For a device with an InGaN light emitting layer with an average InN composition of 20% grown on GaN, one standard deviation in InN composition in the light emitting layer is also observed to be 2% InN, resulting in an expected range between 14% and 26% InN, a variation of 30% from the average. The highest InN composition actually observed was 38%, a variation of 90% from the average.
- The ability to fabricate III-nitride light emitters with high quantum efficiency is often credited to the fact that the above-described InN-rich regions in the InGaN light emitting layers have a smaller band gap than the rest of the InGaN layers, and thus confine electrons and holes in the InN-rich regions, preventing non-radiative recombination at the crystal defects caused by growth on mismatched substrates. In other words, due to the presence of non-radiative recombination sites in conventional III-nitride light emitting devices, some degree of phase-separation in the InGaN light emitting layers may be necessary to achieve high radiative recombination efficiency. At high InN compositions however, the phase-separation is so significant that any benefit of phase-separation may be outweighed by problems introduced by phase-separation, as demonstrated by the undesirably low external quantum efficiency at high InN composition illustrated in
FIG. 2 . -
FIG. 4 illustrates a III-nitride light emitting device according to embodiments of the invention. An n-type orundoped base region 52 is grown oversubstrate 50. A nucleation region (not shown) is generally grown onsubstrate 50 beforebase region 52 is grown. The nucleation region includes one or more layers of polycrystalline or amorphous material. The beginning ofbase region 52 is the first single crystal material grown over the nucleation region. An n-type region 54 is disposed betweenbase layer 52 andactive region 55. A p-type region 56 is formed overactive region 55. Each ofbase region 52, n-type region 54,active region 55, and p-type region 56 may contain one or more layers of different thickness, composition, and dopant concentration. For example,active region 55 may include one or more quantum well layers or light emitting layers surrounded by barrier layers of different composition. - In the embodiment illustrated in
FIG. 4 , a portion of p-type region 56 andactive region 55 is etched away to reveal a portion of n-type region 54. P-contact 58 is formed on the remaining part of p-type region 56 and n-contact 57 is formed on the exposed portion of n-type region 54. Light may be extracted through the top of the device by forming transparent contacts or contacts that cover a small portion of the top of the epitaxial structure. Light may be extracted through the bottom of the substrate of the device by making the contacts reflective, as is known in the art. In such devices, at least one ofbase region 52 and n-type region must be thick enough and sufficiently doped to provide current spreading on the n-side of the active region. In other embodiments,substrate 50 is conductive and one of the contacts is formed on the bottom ofsubstrate 50. In still other embodiments, theepitaxial layers 59 are bonded to a host substrate through a conductive interface to p-type region 56, thengrowth substrate 50 is removed and n-contact 57 is formed on the surface exposed by growth substrate removal. Growth substrate removal is described in more detail in application Ser. No. 10/804,810, filed Mar. 19, 2004, titled “Photonic Crystal Light Emitting Device,” assigned to the assignee of the present invention, and incorporated herein by reference. In embodiments wheresubstrate 50 is conductive or removed,base region 52 may be thinner than in the device ofFIG. 4 . ThoughFIG. 4 shows n-type region 54 grown oversubstrate 50 before p-type region 56, in some embodiments the growth order may be reversed such that p-type region 56 is grown before n-type region 54. In such embodiments,base region 52 may be p-type or undoped material. - In accordance with embodiments of the device, the characteristics of
base region 52 and the light emitting layers ofactive region 55 are chosen to control phase-separation in the light emitting layers. In other words, the characteristics ofbase region 52 and the light emitting layers ofactive region 55 are chosen such that the InN composition at any point in a given light emitting layer is close to the average InN composition across the entire light emitting layer; in some embodiments, the InN composition at any point varies less than 20% from the average InN composition. The variation is preferably less than 10% from the average InN composition, and more preferably less than 5% from the average InN composition. Though the examples below describe InGaN light emitting layers, similar phase-separation behavior is expected in quaternary AlInGaN light emitting layers. Accordingly, the teachings herein are applicable to quaternary light emitting layers. - In some embodiments, the light emitting layers of the active region are prevented from phase-separating by controlling the mismatch in lattice constant between the light emitting layers and
base region 52. In some embodiments, the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region is between about 1 and about 1.01. Though the use of InGaN outside the active region is generally disfavored due to the difficulty of growing high quality InGaN and the sensitivity of InGaN to high process temperatures, InGaN may be used inbase region 52 to limit the lattice constant mismatch with the light emitting layers. In InGaN, lattice constant varies almost linearly with composition. Thus, for a binary GaN or ternaryInGaN base region 52, the lattice constant is tied to the InN composition in the base region and, for a given InGaN light emitting layer ofactive region 52, the base region InN composition may be selected to control the lattice constant mismatch. In some embodiments,base region 52 includes at least one quaternary AlInGaN layer. The use of quaternary layers permits the lattice constant to be engineered independently of the band gap. -
FIG. 5 illustrates, for a given InGaN light emitting layer composition, acceptable lattice parameters for the base region, acceptable InN compositions for a GaN or InGaN base region, and acceptable InN compositions for a quaternary AlInGaN base region including 20% AlN. The preferred base region lattice constants and InN compositions lie on and above the dashed diagonal line inFIG. 5 . In a first example, a device with aGaN base region 52 may have InGaN light emitting layers with an InN composition less than or equal to about 8%. In a second example, a device emitting light at about 500 nm has an InN composition in the InGaN light emitting layers of about 15%. The lattice constant in the base region should be about 3.2 Å or greater. The InN composition of an InGaN base region device should be at least 7%. The InN composition of an AlInGaN base region with 20% AlN should be at least 10%. In a third example, a device emitting light at about 550 nm has an InN composition in the InGaN light emitting layers of about 20%. The lattice constant in the base region should be about 3.22 Å or greater. The InN composition of an InGaN base region should be at least 12%. The InN composition of an AlInGaN base region with 20% AlN should be at least 14%. ThoughFIG. 5 shows acceptable InN compositions in a quaternary layer including 20% AlN as an example, it is to be understood that any quaternary layer composition having a lattice parameter above the dashed diagonal line inFIG. 5 may be used. -
Base region 52 is generally a thick region, for example, at least about one micron thick.Base region 52 sets the lattice constant for the layers grown abovebase region 52 including the light emitting layer or layers of the active region. The layers grown betweenbase region 52 and the light emitting layers, and the light emitting layers themselves, are grown thin enough that they are strained. The strained state maintains the lattice constant ofbase region 52 in, for example, n-type region 54, which spaces baseregion 52 fromactive region 55, and the light emitting layers ofactive region 55. For example, when grown on a GaN base region, in order to maintain the strained state, an InGaN light emitting layer with 8% InN may have a thickness less than about 330 nm; an InGaN light emitting layer with 10% InN may have a thickness less than about 75 nm; and an InGaN light emitting layer with 14% InN may have a thickness less than about 30 nm. - Controlling the mismatch in lattice constant between the light emitting layers and
base region 52 to prevent phase separation may permit the use of thicker light emitting layers. In a conventional III-nitride device, the quantum wells in a multiple quantum well active region are typically limited to a thickness of about 5 nm for about 10% InN composition and to a thickness of about 3 nm for about 20% InN composition. In a device where the characteristics ofbase region 52 and the light emitting layers ofactive region 55 are chosen to substantially reduce phase-separation in the light emitting layers, thicker quantum wells may be used, for example about 5 nm for an InN composition of about 20%. Further, a single, thick light emitting layer may be used, for example with a thickness between about 5 nm and about 300 nm. - Base regions with appropriate lattice constants may be fabricated using known III-nitride growth techniques. When a SiC growth substrate is used,
base region 52 may be grown directly on the substrate. When a sapphire growth substrate is used,base region 52 may be grown on a nucleation region. - In some embodiments, a
base region 52 of appropriate lattice constant is grown over an InN-containing nucleation layer or layers. The nucleation layers closest to the substrate may have more indium than layers further from the substrate. The nucleation layers may be grown at a low temperature, for example between about 400° C. and about 650° C. A cap layer formed at higher temperature may be formed over the InN-containing nucleation layers. The growth of InN-containing nucleation layers is known in the art. - In some embodiments, an InGaN base region is grown by first growing a conventional low temperature (for example, 400° C. to 650° C.) GaN nucleation layer (for example, 150 Å to 350 Å thick) on a sapphire (0001) substrate. A base region of a thick (0.5-5 micron) InGaN film is then grown on top of the GaN nucleation layer. The resulting lattice parameter of this base region is determined by the InN composition in the InGaN film, since it is not strained to the underlying low temperature GaN nucleation layer. Typical precursors for the high temperature InGaN film are tri-methyl indium (TMI) and tri-ethyl gallium (TEG) or tri-methyl gallium (TMG) in an N2 ambient. The InN composition in the base region can be controlled by the growth temperature, e.g. ˜975° C. for a ˜3% InGaN film. Lowering the InGaN growth temperature will increase the InN incorporation and the in-plane lattice parameter. The InGaN film base region can be either undoped or doped.
- In some embodiments, a base region of appropriate lattice constant is grown over a structure that “resets” the lattice constant of the device. For example, a
base region 52 of appropriate composition may be grown as an InN-containing coalescence layer grown over a GaN defect reduction layer or a Si-dosed GaN defect reduction layer. The growth of such coalescence layers and defect reduction layers are described in U.S. Pat. No. 6,630,692 to Goetz et al, which is assigned to the assignee of the present application and incorporated herein by reference. - A device as described above, where the InN composition at any point in the light emitting layer varies less than 20% from the average InN composition, may require reduced dislocation densities, since the light emitting layers lack InN-rich regions which prevent non-radiative carrier recombination via defect states. In some embodiments, devices according to
FIG. 4 may require dislocation densities less than about 5×108 cm−2. Devices with dislocation densities less than about 5×108 cm−2 may be grown by, for example, techniques such as epitaxial lateral overgrowth, pendeoepitaxy, or cantilever epitaxy. Epitaxial lateral overgrowth, pendeoepitaxy, and cantilever epitaxy are well known in the art and described in the following patents and publications, each of which is incorporated by reference: U.S. Pat. No. 6,599,362; Follstaedt et al., “Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN,” Appl. Phys. Lett., 81, 2758 (2002); Nakamura et al., “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate,” Appl. Phys. Lett. 72, 211 (1998); Kato et al., J. Cryst. Growth, 144, 133 (1994); and U.S. Pat. No. 6,265,289. -
FIG. 6 is a plan view of a large junction device (i.e. an area greater than or equal to one square millimeter).FIG. 7 is a cross section of the device shown inFIG. 6 , taken alongaxis 70.FIGS. 6 and 7 illustrate an arrangement of contacts that may be used with any of theepitaxial structures 59 illustrated and described inFIG. 4 and accompanying text. The active region ofepitaxial structure 59 is separated into four regions separated by three trenches in which n-contacts 57 are formed. Each region is connected to a submount by four p-submount connections 24 formed on p-contact 58. N-contact 57 surrounds the four active regions. N-contact 57 is connected to a submount by six n-submount connections 23. The n- and p-contacts may be electrically isolated by an insulatinglayer 22. The device illustrated inFIGS. 6 and 7 is typically mounted in flip chip configuration, such that most of the light exiting the device exits through thegrowth substrate 50. -
FIG. 8 is an exploded view of a packaged light emitting device. A heat-sinking slug 100 is placed into an insert-moldedlead frame 106. The insert-moldedlead frame 106 is, for example, a filled plastic material molded around a metal frame that provides an electrical path.Slug 100 may include anoptional reflector cup 102. The light emitting device die 104, which may be any of the devices described above, is mounted directly or indirectly via a thermally conductingsubmount 103 to slug 100. Acover 108, which may be an optical lens, may be added. - Having described the invention in detail, those skilled in the art will appreciate that, given the present disclosure, modifications may be made to the invention without departing from the spirit of the inventive concept described herein. Therefore, it is not intended that the scope of the invention be limited to the specific embodiments illustrated and described.
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/227,814 US20060011937A1 (en) | 2004-04-21 | 2005-09-14 | Strain-controlled III-nitride light emitting device |
Applications Claiming Priority (2)
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---|---|---|---|
US10/830,202 US6989555B2 (en) | 2004-04-21 | 2004-04-21 | Strain-controlled III-nitride light emitting device |
US11/227,814 US20060011937A1 (en) | 2004-04-21 | 2005-09-14 | Strain-controlled III-nitride light emitting device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/830,202 Division US6989555B2 (en) | 2004-04-21 | 2004-04-21 | Strain-controlled III-nitride light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060011937A1 true US20060011937A1 (en) | 2006-01-19 |
Family
ID=34939350
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/830,202 Expired - Lifetime US6989555B2 (en) | 2004-04-21 | 2004-04-21 | Strain-controlled III-nitride light emitting device |
US11/227,814 Abandoned US20060011937A1 (en) | 2004-04-21 | 2005-09-14 | Strain-controlled III-nitride light emitting device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/830,202 Expired - Lifetime US6989555B2 (en) | 2004-04-21 | 2004-04-21 | Strain-controlled III-nitride light emitting device |
Country Status (4)
Country | Link |
---|---|
US (2) | US6989555B2 (en) |
EP (1) | EP1589593B1 (en) |
JP (1) | JP2005311374A (en) |
TW (2) | TWI389331B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7732231B1 (en) * | 2009-06-03 | 2010-06-08 | Philips Lumileds Lighting Company, Llc | Method of forming a dielectric layer on a semiconductor light emitting device |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070290230A1 (en) | 2003-09-25 | 2007-12-20 | Yasutoshi Kawaguchi | Nitride Semiconductor Device And Production Method Thereof |
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
US7205575B2 (en) * | 2004-09-22 | 2007-04-17 | Unity Opto Technology Co., Ltd. | High brightness light emitting diode |
JP2006202845A (en) * | 2005-01-18 | 2006-08-03 | Sony Corp | Semiconductor light emitting device |
WO2006138626A2 (en) * | 2005-06-17 | 2006-12-28 | The Regents Of The University Of California | (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD |
WO2007081719A2 (en) * | 2006-01-05 | 2007-07-19 | Illumitex, Inc. | Separate optical device for directing light from an led |
CN101553928B (en) | 2006-10-02 | 2011-06-01 | 伊鲁米特克有限公司 | Led system and method |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
US9318327B2 (en) * | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
US7951693B2 (en) * | 2006-12-22 | 2011-05-31 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting devices grown on templates to reduce strain |
US7534638B2 (en) * | 2006-12-22 | 2009-05-19 | Philips Lumiled Lighting Co., Llc | III-nitride light emitting devices grown on templates to reduce strain |
US7547908B2 (en) * | 2006-12-22 | 2009-06-16 | Philips Lumilieds Lighting Co, Llc | III-nitride light emitting devices grown on templates to reduce strain |
JP2008258503A (en) * | 2007-04-06 | 2008-10-23 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element, and method of fabricating nitride-based semiconductor light emitting element |
TW200903838A (en) * | 2007-07-06 | 2009-01-16 | Huga Optotech Inc | Optoelectronic device and the forming method thereof |
TW200903839A (en) * | 2007-07-06 | 2009-01-16 | Huga Optotech Inc | Optoelectronic device and the forming method thereof |
WO2009100358A1 (en) * | 2008-02-08 | 2009-08-13 | Illumitex, Inc. | System and method for emitter layer shaping |
US20090250713A1 (en) * | 2008-04-04 | 2009-10-08 | Philips Lumileds Lighting Company, Llc | Reflective Contact for a Semiconductor Light Emitting Device |
US20090289078A1 (en) * | 2008-05-22 | 2009-11-26 | Scott Melin | Wipes Dispenser With Improved Dispenser Opening |
TW201034256A (en) * | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
JP2010251390A (en) * | 2009-04-13 | 2010-11-04 | Oki Electric Ind Co Ltd | Light emitting diode and method of fabrication thereof |
US8449128B2 (en) * | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
JP2011204959A (en) * | 2010-03-26 | 2011-10-13 | Nippon Telegr & Teleph Corp <Ntt> | Nitride semiconductor light emitting element |
US8969890B2 (en) | 2010-11-04 | 2015-03-03 | Koninklijke Philips N.V. | Solid state light emitting devices based on crystallographically relaxed structures |
JP5166594B1 (en) * | 2011-12-12 | 2013-03-21 | 株式会社東芝 | Semiconductor light emitting device |
US9166068B2 (en) * | 2012-05-03 | 2015-10-20 | The United States Of America As Represented By The Secretary Of The Army | Semiconductor heterobarrier electron device and method of making |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5502316A (en) * | 1993-03-19 | 1996-03-26 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5793054A (en) * | 1995-06-15 | 1998-08-11 | Nec Corporation | Gallium nitride type compound semiconductor light emitting element |
US5793061A (en) * | 1995-08-28 | 1998-08-11 | Mitsubishi Cable Industries, Ltd. | Group-III nitride based light emitter |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US5945689A (en) * | 1995-03-17 | 1999-08-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
US6051847A (en) * | 1997-05-21 | 2000-04-18 | Matsushita Electric Industrial Co., Ltd. | Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film |
US20010002048A1 (en) * | 1999-11-30 | 2001-05-31 | Masayoshi Koike | Light-emitting device using group III nitride group compound semiconductor |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6285696B1 (en) * | 1998-07-31 | 2001-09-04 | Xerox Corporation | Algainn pendeoepitaxy led and laser diode structures for pure blue or green emission |
US20020123164A1 (en) * | 2001-02-01 | 2002-09-05 | Slater David B. | Light emitting diodes including modifications for light extraction and manufacturing methods therefor |
US6455337B1 (en) * | 1997-09-12 | 2002-09-24 | Jds Uniphase Corporation | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
US20030085409A1 (en) * | 2001-11-02 | 2003-05-08 | Yu-Chen Shen | Indium gallium nitride separate confinement heterostructure light emitting devices |
US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
US6635904B2 (en) * | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6764888B2 (en) * | 2000-09-27 | 2004-07-20 | Sensor Electronic Technology, Inc. | Method of producing nitride-based heterostructure devices |
US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5909040A (en) * | 1994-03-09 | 1999-06-01 | Kabushiki Kaisha Toshiba | Semiconductor device including quaternary buffer layer with pinholes |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
JPH08264833A (en) * | 1995-03-10 | 1996-10-11 | Hewlett Packard Co <Hp> | Light emitting diode |
JPH11340580A (en) * | 1997-07-30 | 1999-12-10 | Fujitsu Ltd | Semiconductor laser, semiconductor light-emitting element and its manufacture |
JPH11243251A (en) | 1998-02-26 | 1999-09-07 | Toshiba Corp | Semiconductor laser |
US6194742B1 (en) * | 1998-06-05 | 2001-02-27 | Lumileds Lighting, U.S., Llc | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
US6521917B1 (en) * | 1999-03-26 | 2003-02-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation |
US6599362B2 (en) | 2001-01-03 | 2003-07-29 | Sandia Corporation | Cantilever epitaxial process |
JP3866540B2 (en) * | 2001-07-06 | 2007-01-10 | 株式会社東芝 | Nitride semiconductor device and manufacturing method thereof |
JP2003332697A (en) * | 2002-05-09 | 2003-11-21 | Sony Corp | Nitride semiconductor element and its manufacturing method |
-
2004
- 2004-04-21 US US10/830,202 patent/US6989555B2/en not_active Expired - Lifetime
-
2005
- 2005-04-18 EP EP05103073.2A patent/EP1589593B1/en active Active
- 2005-04-19 TW TW094112453A patent/TWI389331B/en active
- 2005-04-19 TW TW101109727A patent/TWI502763B/en active
- 2005-04-21 JP JP2005123289A patent/JP2005311374A/en active Pending
- 2005-09-14 US US11/227,814 patent/US20060011937A1/en not_active Abandoned
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5502316A (en) * | 1993-03-19 | 1996-03-26 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5945689A (en) * | 1995-03-17 | 1999-08-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
US5793054A (en) * | 1995-06-15 | 1998-08-11 | Nec Corporation | Gallium nitride type compound semiconductor light emitting element |
US5793061A (en) * | 1995-08-28 | 1998-08-11 | Mitsubishi Cable Industries, Ltd. | Group-III nitride based light emitter |
US5874747A (en) * | 1996-02-05 | 1999-02-23 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
US6051847A (en) * | 1997-05-21 | 2000-04-18 | Matsushita Electric Industrial Co., Ltd. | Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film |
US6455337B1 (en) * | 1997-09-12 | 2002-09-24 | Jds Uniphase Corporation | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
US6285696B1 (en) * | 1998-07-31 | 2001-09-04 | Xerox Corporation | Algainn pendeoepitaxy led and laser diode structures for pure blue or green emission |
US20010002048A1 (en) * | 1999-11-30 | 2001-05-31 | Masayoshi Koike | Light-emitting device using group III nitride group compound semiconductor |
US6764888B2 (en) * | 2000-09-27 | 2004-07-20 | Sensor Electronic Technology, Inc. | Method of producing nitride-based heterostructure devices |
US7348606B2 (en) * | 2000-09-27 | 2008-03-25 | Sensor Electronic Technology, Inc. | Nitride-based heterostructure devices |
US20020123164A1 (en) * | 2001-02-01 | 2002-09-05 | Slater David B. | Light emitting diodes including modifications for light extraction and manufacturing methods therefor |
US6635904B2 (en) * | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
US20030085409A1 (en) * | 2001-11-02 | 2003-05-08 | Yu-Chen Shen | Indium gallium nitride separate confinement heterostructure light emitting devices |
US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7732231B1 (en) * | 2009-06-03 | 2010-06-08 | Philips Lumileds Lighting Company, Llc | Method of forming a dielectric layer on a semiconductor light emitting device |
Also Published As
Publication number | Publication date |
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TWI502763B (en) | 2015-10-01 |
EP1589593A2 (en) | 2005-10-26 |
JP2005311374A (en) | 2005-11-04 |
TWI389331B (en) | 2013-03-11 |
EP1589593B1 (en) | 2019-06-12 |
TW201242074A (en) | 2012-10-16 |
US6989555B2 (en) | 2006-01-24 |
TW200605400A (en) | 2006-02-01 |
EP1589593A3 (en) | 2011-04-27 |
US20050236641A1 (en) | 2005-10-27 |
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