US20050263837A1 - Bump style MEMS switch - Google Patents
Bump style MEMS switch Download PDFInfo
- Publication number
- US20050263837A1 US20050263837A1 US11/196,994 US19699405A US2005263837A1 US 20050263837 A1 US20050263837 A1 US 20050263837A1 US 19699405 A US19699405 A US 19699405A US 2005263837 A1 US2005263837 A1 US 2005263837A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- switch
- layer
- contact
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
Definitions
- This invention relates generally to microelectro-mechanical system switches.
- MEMS switches are mechanical switches that are fabricated using integrated circuit techniques at very small dimensions.
- MEMS switches use a tip configuration.
- the switch may consist of a cantilevered arm extending over a semiconductor substrate. Near the end of the cantilevered arm is a tip with a contact. The tip contact makes an electrical connection when the cantilevered arm is deflected towards the semiconductor substrate so as to electrically touch a contact formed on the substrate.
- a movable element over the substrate includes a protrusion that makes an electrical connection to a contact on the substrate when the beam is electrostatically deflected towards said substrate.
- the manufacturing process flow for a tip-based switch may include timed etch steps.
- timed etch processes In high volume manufacturing, it is not desirable to work with timed etch processes since they may not be repeatable.
- the constituents that are used, such as acids, may change with time and etched layers may change from batch to batch.
- etch stop layers may be utilized to reduce the affect of timed etches. However, the use of etch stops also yields quite sensitive and complex process flows.
- FIG. 1 is an enlarged, schematic view of one embodiment of the present invention at an early stage of manufacture
- FIG. 2 is an enlarged cross-sectional view corresponding to FIG. 1 at a subsequent stage of manufacture in accordance with one embodiment of the present invention
- FIG. 3 is an enlarged cross-sectional view corresponding to FIG. 2 at a subsequent stage of manufacture in accordance with one embodiment of the present invention
- FIG. 4 is an enlarged cross-sectional view corresponding to FIG. 3 at a subsequent stage of manufacture in accordance with one embodiment of the present invention
- FIG. 5 is an enlarged cross-sectional view corresponding to FIG. 4 at a subsequent stage of manufacture in accordance with one embodiment of the present invention
- FIG. 6 is an enlarged cross-sectional view corresponding to FIG. 5 at a subsequent stage of manufacture in accordance with one embodiment of the present invention
- FIG. 7 is an enlarged cross-sectional view corresponding to FIG. 6 at a subsequent stage of manufacture in accordance with one embodiment of the present invention.
- FIG. 8 is an enlarged cross-sectional view corresponding to FIG. 7 at a subsequent stage of manufacture in accordance with one embodiment of the present invention.
- FIG. 9 is an enlarged cross-sectional view corresponding to FIG. 8 at a subsequent stage of manufacture in accordance with one embodiment of the present invention.
- FIG. 10 is an enlarged cross-sectional view corresponding to FIG. 9 at a subsequent stage of manufacture in accordance with one embodiment of the present invention.
- FIG. 11 is an enlarged cross-sectional view corresponding to FIG. 10 at a subsequent stage of manufacture in accordance with one embodiment of the present invention.
- FIG. 12 is an enlarged cross-sectional view corresponding to FIG. 11 with the switch closed.
- a microelectromechanical system (MEMS) switch is formed which uses what may be called a bump configuration.
- a bump configuration the protrusion is formed on the substrate and no such protrusion need be formed on the deflectable arm or beam.
- the term “deflectable member” will refer to an extended beam or cantilevered arm that moves relative to the substrate to make and break an electrical contact. While the ensuing description describes a cantilevered type structure, the present invention is applicable to any MEMS switch with a deflectable member.
- timed etch steps may be eliminated which may improve repeatability in high volume manufacturing.
- present invention is not necessarily limited to embodiments that preclude the use of timed etch steps.
- a semiconductor substrate 10 may be covered by a layer 12 , such as silicon nitride, and an opening 14 may be defined therein using conventional techniques such as patterning and etching.
- the structure may be exposed to a high temperature oxidation to grow the field oxide-like bump 16 shown in FIG. 2 , in one embodiment.
- the remaining layer 12 may be removed and a new isolation layer 15 may be formed, for example, by deposition.
- the layer 15 may be deposited and may be an interlayer dielectric (ILD) or a medium temperature oxide (MTO), as two examples.
- ILD interlayer dielectric
- MTO medium temperature oxide
- a metal layer 18 formed over the layer 14 may be patterned and etched to define the illustrated pattern.
- the metal layer 18 in one embodiment, may be formed by sputtering and patterning. In some cases, the layer 18 may be formed of gold.
- a planarization layer 22 may be deposited.
- the layer 22 may be photoresist and in another embodiment it may be spin-on glass.
- Other sacrificial materials may be used as well, including materials that are removed in response to heating.
- the thickness of the layer 22 over the bump 16 is smaller than that over the layer 18 .
- an opening 24 may be formed through the layer 22 using masking and etch steps. Thereafter, a seed layer 20 may be formed.
- the seed layer 20 may be sputter deposited in one embodiment and may be a very thin layer of a metal, such as gold, in one embodiment.
- a mold 26 may be defined for subsequent metal electroplating. Then a metal 28 may be electroplated over the seed layer 22 as shown in FIG. 8 . In one embodiment, the metal 28 may also be gold.
- the mold 26 may be removed. Then, referring to FIG. 10 , the exposed portion of the seed layer 20 may be removed. Thereafter, referring to FIG. 11 , the layer 22 may be removed.
- the layer 22 may be removed by heating in one embodiment of the present invention.
- the layer 22 may be a sacrificial material that breaks down and is removed as a vapor.
- the remaining portion of the metal 28 may act as a deflectable member.
- the metal 28 may be deflected towards and away from the substrate 10 in response to an electrostatic force applied by the portion 18 a to the overlying portion of the seed layer 20 .
- the metal 28 may be deflected so that the seed layer 20 makes electrical contact with the portion 18 b over the bump 16 . Since the seed layer 20 and the portion 18 b may be conductors, an electrical connection may be made.
- the bump 16 is illustrated as being formed from a field oxide-like technique, the bump oxide 16 may be formed in other ways, including deposition and wet etching.
- the use of a bump rather than a tip configuration may reduce or eliminate timed etch steps which may result in repeatability problems.
- One sacrificial layer may be utilized instead of two sacrificial layers in some embodiments.
- the sacrificial layer release may be simplier since there is only one sacrificial layer in some embodiments.
- wafer that have gold on them may run in an isolated area. The isolated area may have a limited set of equipment. By moving from the tip to the bump configuration, more activities may be done in the non-isolated fab areas before the wafers are moved to the isolated fab areas. Thus, conventional CMOS equipment may be utilized in MEMS processes.
Landscapes
- Micromachines (AREA)
- Manufacture Of Switches (AREA)
Abstract
A microelectromechanical system switch may be formed with a protrusion defined on the substrate which makes contact with a deflectable member arranged over the substrate. The deflectable member may, for example, be a cantilevered arm or a deflectable beam. The protrusion may be formed in the substrate in one embodiment using field oxide techniques.
Description
- This invention relates generally to microelectro-mechanical system switches.
- Microelectromechanical system (MEMS) switches are mechanical switches that are fabricated using integrated circuit techniques at very small dimensions. Typically, MEMS switches use a tip configuration. The switch may consist of a cantilevered arm extending over a semiconductor substrate. Near the end of the cantilevered arm is a tip with a contact. The tip contact makes an electrical connection when the cantilevered arm is deflected towards the semiconductor substrate so as to electrically touch a contact formed on the substrate.
- Other MEMS switches may use a beam instead of an arm. Here, too, a movable element over the substrate includes a protrusion that makes an electrical connection to a contact on the substrate when the beam is electrostatically deflected towards said substrate.
- The manufacturing process flow for a tip-based switch may include timed etch steps. In high volume manufacturing, it is not desirable to work with timed etch processes since they may not be repeatable. The constituents that are used, such as acids, may change with time and etched layers may change from batch to batch. In high volume manufacturing, etch stop layers may be utilized to reduce the affect of timed etches. However, the use of etch stops also yields quite sensitive and complex process flows.
- Thus, it would be desirable to provide a different type of MEMS switch.
-
FIG. 1 is an enlarged, schematic view of one embodiment of the present invention at an early stage of manufacture; -
FIG. 2 is an enlarged cross-sectional view corresponding toFIG. 1 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 3 is an enlarged cross-sectional view corresponding toFIG. 2 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 4 is an enlarged cross-sectional view corresponding toFIG. 3 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 5 is an enlarged cross-sectional view corresponding toFIG. 4 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 6 is an enlarged cross-sectional view corresponding toFIG. 5 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 7 is an enlarged cross-sectional view corresponding toFIG. 6 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 8 is an enlarged cross-sectional view corresponding toFIG. 7 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 9 is an enlarged cross-sectional view corresponding toFIG. 8 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 10 is an enlarged cross-sectional view corresponding toFIG. 9 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; -
FIG. 11 is an enlarged cross-sectional view corresponding toFIG. 10 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; and -
FIG. 12 is an enlarged cross-sectional view corresponding toFIG. 11 with the switch closed. - In accordance with some embodiments of the present invention, a microelectromechanical system (MEMS) switch is formed which uses what may be called a bump configuration. In a bump configuration the protrusion is formed on the substrate and no such protrusion need be formed on the deflectable arm or beam. As used herein, the term “deflectable member” will refer to an extended beam or cantilevered arm that moves relative to the substrate to make and break an electrical contact. While the ensuing description describes a cantilevered type structure, the present invention is applicable to any MEMS switch with a deflectable member.
- In some embodiments of the present invention, the use of timed etch steps may be eliminated which may improve repeatability in high volume manufacturing. However, the present invention is not necessarily limited to embodiments that preclude the use of timed etch steps.
- Referring to
FIG. 1 , asemiconductor substrate 10 may be covered by alayer 12, such as silicon nitride, and anopening 14 may be defined therein using conventional techniques such as patterning and etching. The structure may be exposed to a high temperature oxidation to grow the field oxide-like bump 16 shown inFIG. 2 , in one embodiment. - Referring to
FIG. 3 , theremaining layer 12 may be removed and anew isolation layer 15 may be formed, for example, by deposition. In one embodiment, thelayer 15 may be deposited and may be an interlayer dielectric (ILD) or a medium temperature oxide (MTO), as two examples. - Referring to
FIG. 4 , ametal layer 18, formed over thelayer 14 may be patterned and etched to define the illustrated pattern. Themetal layer 18, in one embodiment, may be formed by sputtering and patterning. In some cases, thelayer 18 may be formed of gold. - Referring to
FIG. 5 , aplanarization layer 22 may be deposited. In one embodiment, thelayer 22 may be photoresist and in another embodiment it may be spin-on glass. Other sacrificial materials may be used as well, including materials that are removed in response to heating. Desirably, the thickness of thelayer 22 over thebump 16 is smaller than that over thelayer 18. - Referring to
FIG. 6 , anopening 24 may be formed through thelayer 22 using masking and etch steps. Thereafter, aseed layer 20 may be formed. Theseed layer 20 may be sputter deposited in one embodiment and may be a very thin layer of a metal, such as gold, in one embodiment. - Referring to
FIG. 7 , amold 26 may be defined for subsequent metal electroplating. Then ametal 28 may be electroplated over theseed layer 22 as shown inFIG. 8 . In one embodiment, themetal 28 may also be gold. - Referring to
FIG. 9 , themold 26 may be removed. Then, referring toFIG. 10 , the exposed portion of theseed layer 20 may be removed. Thereafter, referring toFIG. 11 , thelayer 22 may be removed. Thelayer 22 may be removed by heating in one embodiment of the present invention. Thelayer 22 may be a sacrificial material that breaks down and is removed as a vapor. - The remaining portion of the
metal 28 may act as a deflectable member. Themetal 28 may be deflected towards and away from thesubstrate 10 in response to an electrostatic force applied by theportion 18 a to the overlying portion of theseed layer 20. Thus, as shown inFIG. 12 , themetal 28 may be deflected so that theseed layer 20 makes electrical contact with theportion 18 b over thebump 16. Since theseed layer 20 and theportion 18 b may be conductors, an electrical connection may be made. - While the
bump 16 is illustrated as being formed from a field oxide-like technique, thebump oxide 16 may be formed in other ways, including deposition and wet etching. In some embodiments of the present invention, the use of a bump rather than a tip configuration may reduce or eliminate timed etch steps which may result in repeatability problems. One sacrificial layer may be utilized instead of two sacrificial layers in some embodiments. The sacrificial layer release may be simplier since there is only one sacrificial layer in some embodiments. Also, in fabrication facilities that run both complementary metal oxide semiconductor technologies and MEMS technologies, wafer that have gold on them may run in an isolated area. The isolated area may have a limited set of equipment. By moving from the tip to the bump configuration, more activities may be done in the non-isolated fab areas before the wafers are moved to the isolated fab areas. Thus, conventional CMOS equipment may be utilized in MEMS processes. - While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
Claims (9)
1-9. (canceled)
10. A microelectromechanical system comprising:
a substrate;
a deflectable member formed on said substrate so as to move towards and away from said substrate; and
a contact formed on said substrate protruding toward said deflectable member a portion of said contact being formed of an insulator.
11. The switch of claim 10 , said contact including a protrusion including an said insulator covered by a conductive layer.
12. The switch of claim 11 wherein said insulator is field oxide.
13. The switch of claim 10 wherein said deflectable member is a cantilevered beam.
14. The switch of claim 10 wherein said deflectable member has a lower surface which is substantially planar and substantially free of downwardly directed protrusions.
15-20. (canceled)
21. The switch of claim 11 wherein said oxide extends into said substrate.
22. The switch of claim 13 wherein said member has a free end and a fixed end, said fixed end arranged to contact said contact on said substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/196,994 US20050263837A1 (en) | 2003-03-31 | 2005-08-04 | Bump style MEMS switch |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/403,738 US7118935B2 (en) | 2003-03-31 | 2003-03-31 | Bump style MEMS switch |
US11/196,994 US20050263837A1 (en) | 2003-03-31 | 2005-08-04 | Bump style MEMS switch |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/403,738 Division US7118935B2 (en) | 2003-03-31 | 2003-03-31 | Bump style MEMS switch |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050263837A1 true US20050263837A1 (en) | 2005-12-01 |
Family
ID=32990016
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/403,738 Expired - Fee Related US7118935B2 (en) | 2003-03-31 | 2003-03-31 | Bump style MEMS switch |
US11/196,994 Abandoned US20050263837A1 (en) | 2003-03-31 | 2005-08-04 | Bump style MEMS switch |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/403,738 Expired - Fee Related US7118935B2 (en) | 2003-03-31 | 2003-03-31 | Bump style MEMS switch |
Country Status (7)
Country | Link |
---|---|
US (2) | US7118935B2 (en) |
EP (1) | EP1611588B1 (en) |
JP (1) | JP2006518911A (en) |
CN (1) | CN100483593C (en) |
MY (1) | MY136286A (en) |
TW (1) | TWI269349B (en) |
WO (1) | WO2004095490A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100181652A1 (en) * | 2009-01-16 | 2010-07-22 | Honeywell International Inc. | Systems and methods for stiction reduction in mems devices |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8872833B2 (en) | 2003-09-15 | 2014-10-28 | Nvidia Corporation | Integrated circuit configuration system and method |
US8732644B1 (en) | 2003-09-15 | 2014-05-20 | Nvidia Corporation | Micro electro mechanical switch system and method for testing and configuring semiconductor functional circuits |
US8775997B2 (en) | 2003-09-15 | 2014-07-08 | Nvidia Corporation | System and method for testing and configuring semiconductor functional circuits |
US6880940B1 (en) * | 2003-11-10 | 2005-04-19 | Honda Motor Co., Ltd. | Magnesium mirror base with countermeasures for galvanic corrosion |
US8711161B1 (en) | 2003-12-18 | 2014-04-29 | Nvidia Corporation | Functional component compensation reconfiguration system and method |
KR100837267B1 (en) * | 2004-05-19 | 2008-06-12 | (주)지엔씨 | Cellular phone with Unified Plastic Buttons |
US8723231B1 (en) * | 2004-09-15 | 2014-05-13 | Nvidia Corporation | Semiconductor die micro electro-mechanical switch management system and method |
US8711156B1 (en) | 2004-09-30 | 2014-04-29 | Nvidia Corporation | Method and system for remapping processing elements in a pipeline of a graphics processing unit |
US8021193B1 (en) * | 2005-04-25 | 2011-09-20 | Nvidia Corporation | Controlled impedance display adapter |
US7793029B1 (en) | 2005-05-17 | 2010-09-07 | Nvidia Corporation | Translation device apparatus for configuring printed circuit board connectors |
US8412872B1 (en) | 2005-12-12 | 2013-04-02 | Nvidia Corporation | Configurable GPU and method for graphics processing using a configurable GPU |
US8417838B2 (en) | 2005-12-12 | 2013-04-09 | Nvidia Corporation | System and method for configurable digital communication |
KR100840644B1 (en) * | 2006-12-29 | 2008-06-24 | 동부일렉트로닉스 주식회사 | Switching device and method of fabricating the same |
US8724483B2 (en) | 2007-10-22 | 2014-05-13 | Nvidia Corporation | Loopback configuration for bi-directional interfaces |
US9331869B2 (en) | 2010-03-04 | 2016-05-03 | Nvidia Corporation | Input/output request packet handling techniques by a device specific kernel mode driver |
US9725299B1 (en) * | 2016-01-27 | 2017-08-08 | Taiwan Semiconductor Manufacturing Company Ltd. | MEMS device and multi-layered structure |
CN109003908B (en) * | 2018-08-08 | 2020-09-22 | 苏州晶方半导体科技股份有限公司 | Chip packaging method and chip packaging structure |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3620932A (en) * | 1969-05-05 | 1971-11-16 | Trw Semiconductors Inc | Beam leads and method of fabrication |
US5472916A (en) * | 1993-04-05 | 1995-12-05 | Siemens Aktiengesellschaft | Method for manufacturing tunnel-effect sensors |
US5846596A (en) * | 1996-02-22 | 1998-12-08 | Samsung Electronics Co., Ltd. | Methods of forming field oxide isolation regions having sloped edges |
US20020097118A1 (en) * | 2001-01-25 | 2002-07-25 | Siekkinen James W. | Current actuated switch |
US20030127698A1 (en) * | 2002-01-04 | 2003-07-10 | Samsung Electronics Co., Ltd. | Cantilever having step-up structure and method for manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5604370A (en) * | 1995-07-11 | 1997-02-18 | Advanced Micro Devices, Inc. | Field implant for semiconductor device |
EP0766295A1 (en) * | 1995-09-29 | 1997-04-02 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Process for forming a high frequency bipolar transistor structure comprising an oblique implantation step |
US6396368B1 (en) | 1999-11-10 | 2002-05-28 | Hrl Laboratories, Llc | CMOS-compatible MEM switches and method of making |
WO2002073645A1 (en) | 2001-03-12 | 2002-09-19 | Hrl Laboratories, Llc | Torsion spring for electro-mechanical switches and a cantilever-type rf micro-electromechanical switch incorporating the torsion spring |
-
2003
- 2003-03-31 US US10/403,738 patent/US7118935B2/en not_active Expired - Fee Related
-
2004
- 2004-02-19 CN CNB2004800088322A patent/CN100483593C/en not_active Expired - Fee Related
- 2004-02-19 EP EP04712954A patent/EP1611588B1/en not_active Expired - Lifetime
- 2004-02-19 JP JP2005518589A patent/JP2006518911A/en active Pending
- 2004-02-19 WO PCT/US2004/005832 patent/WO2004095490A1/en active Application Filing
- 2004-02-26 TW TW093104954A patent/TWI269349B/en not_active IP Right Cessation
- 2004-03-11 MY MYPI20040846A patent/MY136286A/en unknown
-
2005
- 2005-08-04 US US11/196,994 patent/US20050263837A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3620932A (en) * | 1969-05-05 | 1971-11-16 | Trw Semiconductors Inc | Beam leads and method of fabrication |
US5472916A (en) * | 1993-04-05 | 1995-12-05 | Siemens Aktiengesellschaft | Method for manufacturing tunnel-effect sensors |
US5846596A (en) * | 1996-02-22 | 1998-12-08 | Samsung Electronics Co., Ltd. | Methods of forming field oxide isolation regions having sloped edges |
US20020097118A1 (en) * | 2001-01-25 | 2002-07-25 | Siekkinen James W. | Current actuated switch |
US20030127698A1 (en) * | 2002-01-04 | 2003-07-10 | Samsung Electronics Co., Ltd. | Cantilever having step-up structure and method for manufacturing the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100181652A1 (en) * | 2009-01-16 | 2010-07-22 | Honeywell International Inc. | Systems and methods for stiction reduction in mems devices |
Also Published As
Publication number | Publication date |
---|---|
US7118935B2 (en) | 2006-10-10 |
US20040188781A1 (en) | 2004-09-30 |
JP2006518911A (en) | 2006-08-17 |
TW200426897A (en) | 2004-12-01 |
MY136286A (en) | 2008-09-30 |
EP1611588A1 (en) | 2006-01-04 |
CN100483593C (en) | 2009-04-29 |
TWI269349B (en) | 2006-12-21 |
WO2004095490A1 (en) | 2004-11-04 |
EP1611588B1 (en) | 2012-11-28 |
CN1768408A (en) | 2006-05-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20050263837A1 (en) | Bump style MEMS switch | |
US6046659A (en) | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications | |
JP3808052B2 (en) | Manufacturing method of micro electromechanical switch (MEMS) | |
US6800912B2 (en) | Integrated electromechanical switch and tunable capacitor and method of making the same | |
US5638946A (en) | Micromechanical switch with insulated switch contact | |
US6667245B2 (en) | CMOS-compatible MEM switches and method of making | |
US6496351B2 (en) | MEMS device members having portions that contact a substrate and associated methods of operating | |
US7352266B2 (en) | Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch | |
US7242066B2 (en) | Manufacturing method of a microelectromechanical switch | |
US20080093691A1 (en) | MEM switching device and method for making same | |
EP1288977B1 (en) | Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode | |
US20030058069A1 (en) | Stress bimorph MEMS switches and methods of making same | |
WO2005113421A1 (en) | Beam for mems switch | |
US6962832B2 (en) | Fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch | |
US20100263999A1 (en) | Low-cost process-independent rf mems switch | |
US20080217149A1 (en) | Integrated arrangement and method for production | |
US20050062565A1 (en) | Method of using a metal platform for making a highly reliable and reproducible metal contact micro-relay MEMS switch | |
US7075393B2 (en) | Micromachined relay with inorganic insulation | |
WO2004066326A2 (en) | Electro-thermally actuated lateral contact microrelay and associated manufacturing process | |
KR100320190B1 (en) | Structure of rf switch and fabricating method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |