US20050158910A1 - Protective layer for use in packaging a semiconductor die and method for forming same - Google Patents
Protective layer for use in packaging a semiconductor die and method for forming same Download PDFInfo
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- US20050158910A1 US20050158910A1 US11/080,697 US8069705A US2005158910A1 US 20050158910 A1 US20050158910 A1 US 20050158910A1 US 8069705 A US8069705 A US 8069705A US 2005158910 A1 US2005158910 A1 US 2005158910A1
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- protective layer
- forming
- layer
- semiconductor device
- passivation layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 239000011241 protective layer Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims description 43
- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 239000010410 layer Substances 0.000 claims abstract description 106
- 238000002161 passivation Methods 0.000 claims abstract description 58
- 230000007547 defect Effects 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 239000000945 filler Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 3
- 229920002577 polybenzoxazole Polymers 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 208000013201 Stress fracture Diseases 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates generally to semiconductor device, and, more particularly, to a protective layer for use in packaging a semiconductor device.
- a conventional integrated circuit device such as a microprocessor, is typically comprised of many thousands of semiconductor devices, e.g., transistors, formed above the surface of a semiconductor substrate.
- the transistors For the integrated circuit device to function, the transistors must be electrically connected to one another through conductive interconnect structures.
- conductive interconnect structures Many modern integrated circuit devices are very densely picked, i.e., there is very little space between the transistors formed above the substrate. Thus, these conductive interconnect structures must be made in multiple layers to conserve plot space on the semiconductor substrate.
- dielectric layers such as silicon oxide or silicon nitride
- the dielectric layer may act as a protective layer to prevent diffusion of the copper and as an antireflective coating for subsequent photolithography steps.
- Passivation layers also formed of silicon nitride, for example, may be formed above the topmost layer of the semiconductor device. Typically, such a passivation layer acts as a barrier to contaminants that may cause the underlying semiconductor device to operate in an undesirable manner or to fail.
- FIG. 1A shows an exemplary prior art semiconductor device 100 .
- the semiconductor device 100 includes at least one, and typically several, device layer(s) 105 , which may contain transistors, interconnect structures, and the like, as discussed above.
- One or more metal structures 110 may be formed above the device layer 105 .
- the metal structures 110 may be electrical contacts and/or interconnects used to provide conductive connections to the integrated circuits in the device layer(s) 105 .
- the metal structures 110 may also be pads, gates, or the like.
- the device layer(s) 105 may be formed above a semiconductor substrate (not shown) or above another device layer (not shown).
- One or more passivation layers 120 , 125 , 130 may be formed above the metal structures 110 and the device layer 105 .
- the passivation layers 120 , 125 , 130 are a tetraethyl orthosilicate (TEOS) layer 120 , a nitride passivation layer 125 , and a polyimide layer 130 .
- TEOS tetraethyl orthosilicate
- fewer passivation layers 120 , 125 , 130 may be formed above the metal structures 110 .
- the polyimide layer 130 may not be included.
- the passivation layers 120 , 125 , 130 may be formed by a variety of processes known to those of ordinary skill in the art, including chemical vapor deposition, plasma-enhanced chemical vapor deposition, spin-on processes, thermal growth, and the like.
- FIG. 1B shows an exemplary packaged semiconductor device 100 .
- a package substrate 150 may be deployed above the passivation layers 120 , 125 , 130 , in a manner well known to those of ordinary skill in the art.
- a mold compound 140 such as an epoxy-based compound, may then be injected into the package body in the space between the package substrate 150 and the passivation layers 120 , 125 , 130 .
- a mold compound 140 such as an epoxy-based compound
- filler particles 160 in the mold compound 140 can become trapped between the semiconductor device 100 and the substrate 150 .
- the filler particles 160 may be SiO 2 .
- the filler particles 160 may be pushed into the passivation layers 120 , 125 , 130 .
- a force, indicated by the arrow 155 may be applied to position the substrate 150 above the mold compound 140 .
- the filler particles 160 may exert a force, indicated by the arrow 170 , on the passivation layers 120 , 125 , 130 .
- the force 170 may result in stress fractures in one or more of the passivation layers 120 , 125 , 130 , causing one or more of the passivation layers 120 , 125 , 130 to function in an undesirable manner or to fail.
- the filler particles 160 may cause stress defect failures 175 in the nitride layer 125 and/or the TEOS layer 120 , thus adversely affecting the metal structures 110 and/or the device layer 105 .
- the stress defect failures 175 may also create points of failure in the metal structures 110 and/or the various structures that may be formed in the device layer 105 and, consequently, the stress defect failures 175 may cause the semiconductor device 100 to operate in an undesirable manner or to fail altogether.
- the present invention is intended to overcome, or at least reduce the effects of, one or more of the above problems.
- a semiconductor device having a protective layer for use in packaging the semiconductor device.
- the apparatus includes a dielectric layer, a first passivation layer formed above the dielectric layer, and a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
- a method for forming a semiconductor device.
- the method includes forming a dielectric layer, forming a first passivation layer above the dielectric layer, and forming a protective layer above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
- FIG. 1A shows an exemplary prior art semiconductor device
- FIG. 1B shows an exemplary prior art packaged semiconductor device
- FIG. 2 shows an exemplary packaged semiconductor device that includes a protective layer, in accordance with one embodiment of the present invention.
- FIG. 2 shows an exemplary packaged semiconductor device 200 . Only those features useful for understanding of the present invention are shown and discussed. Although the various regions and structures of the semiconductor device 200 are depicted in the drawings as having very precise, sharp configurations and profiles, those skilled in the art recognize that, in reality, these regions and structures are not as precise as indicated in the drawings. Additionally, the relative sizes of the various features depicted in the drawings may be exaggerated or reduced as compared to the sizes of those features on fabricated devices. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present invention.
- the semiconductor device 200 may include the device layer 105 .
- the device layer 105 is a dielectric layer, or a collection of dielectric layers containing a variety of components that may include transistors, interconnect structures, and the like.
- the various components of the device layer 105 may be formed above a silicon substrate and/or another device layer (not shown).
- one or more metal structures 110 may also be formed above the device layer 105 .
- the TEOS layer 120 may be formed above the metal structures 110 and/or the device layer 105 by a variety of processes well-known to those of ordinary skill in the art. The process by which the TEOS layer 120 is formed, as well as the parameters and dimensions of the TEOS layer 120 , are not material to the present invention and so will not be described in detail herein.
- the semiconductor device 200 includes a first passivation layer 125 .
- the first passivation layer 125 is a nitride passivation layer 125 formed above the TEOS layer 120 .
- the nitride passivation layer 125 may be formed of silicon nitride and have a thickness of about 6000 ⁇ .
- the first passivation layer 125 may be formed of other materials and may be thicker or thinner than about 6000 ⁇ .
- the first passivation layer 125 may be formed by a variety of processes well-known to those of ordinary skill in the art.
- the first passivation layer 125 may be formed using chemical vapor deposition (CVD), low-pressure CVD (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), sputtering and physical vapor deposition (PVD), and the like.
- the first passivation layer 125 may also be formed using well known spin-on process.
- the first passivation layer 125 is formed using a relatively low-temperature process because of the potentially adverse effects on various portions of the semiconductor device 200 of high temperatures at that stage of the fabrication process.
- the present invention is not limited to the use of low temperature processes to form the first passivation layer 125 .
- the semiconductor device 200 includes a protective layer 210 , in accordance with one embodiment of the present invention.
- the protective layer 210 may be formed of silicon carbide and may have a thickness ranging from 1000-3000 ⁇ , however, the present invention is not so limited.
- the protective layer 210 may be formed from or include other materials.
- impurities such as nitrogen may be introduced into the protective layer 210 to alter physical properties such as the toughness, hardness, adhesion, etchability, and the like.
- the thickness of the protective layer 210 may be outside of the range 1000-3000 ⁇ .
- the protective layer 210 is formed above the first passivation layer 125 .
- the protective layer 210 may be deposited above the first passivation layer 125 by, for example, a plasma-enhanced chemical vapor deposition (PECVD) process.
- PECVD plasma-enhanced chemical vapor deposition
- CVD chemical vapor deposition
- LPCVD low-pressure CVD
- PVD physical vapor deposition
- sputtering spin-on, and the like
- a second passivation layer 130 may be formed above the protective layer 210 .
- the second passivation layer 130 may be a polymer layer 130 having a thickness ranging from 5000 ⁇ to 500,000 ⁇ .
- the polymer layer 130 may be formed of a polyimide material, a Cardo material, an epoxy material, a benzocyclobutene material, a polybenzoxazole material, a silicon material, and the like.
- the second passivation layer 130 may be formed by a variety of processes well-known to those of ordinary skill in the art. However, it will be appreciated by those of ordinary skill in the art having benefit of the present disclosure that the second passivation layer 130 is not required for the practice of the present invention and may be omitted if so desired.
- the filler particles 160 can become trapped between the protective layer 210 and the substrate 150 , and the filler particles 160 may transmit the force 170 to the semiconductor device 200 in response to the force 155 , as discussed previously.
- the protective layer 210 above the first passivation layer 125 will make the semiconductor device 200 more able to withstand the force 170 and resist, or prevent, stress defect failures 175 .
- forming a SiC protective layer 210 above the nitride passivation layer 125 has been demonstrated to reduce the number of stress defect failures 175 . Consequently, forming the protective layer 210 above the first passivation layer 125 may also reduce the number of failures of the semiconductor device 200 and thereby increase yield and throughput in the semiconductor fabrication process.
- forming the SiC protective layer 210 may also improve refresh times in the semiconductor device 200 .
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a semiconductor device having a protective layer for use in packaging the semiconductor device. The apparatus includes a dielectric layer, a first passivation layer formed above the dielectric layer, and a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
Description
- 1. Field of the Invention
- This invention relates generally to semiconductor device, and, more particularly, to a protective layer for use in packaging a semiconductor device.
- 2. Description of the Related Art
- A conventional integrated circuit device, such as a microprocessor, is typically comprised of many thousands of semiconductor devices, e.g., transistors, formed above the surface of a semiconductor substrate. For the integrated circuit device to function, the transistors must be electrically connected to one another through conductive interconnect structures. Many modern integrated circuit devices are very densely picked, i.e., there is very little space between the transistors formed above the substrate. Thus, these conductive interconnect structures must be made in multiple layers to conserve plot space on the semiconductor substrate.
- Commonly, dielectric layers, such as silicon oxide or silicon nitride, are formed between various layers during the manufacture of the semiconductor device. In cases where copper is used to form the conductive interconnect structures in the semiconductor device, the dielectric layer may act as a protective layer to prevent diffusion of the copper and as an antireflective coating for subsequent photolithography steps. Passivation layers, also formed of silicon nitride, for example, may be formed above the topmost layer of the semiconductor device. Typically, such a passivation layer acts as a barrier to contaminants that may cause the underlying semiconductor device to operate in an undesirable manner or to fail.
-
FIG. 1A shows an exemplary priorart semiconductor device 100. Thesemiconductor device 100 includes at least one, and typically several, device layer(s) 105, which may contain transistors, interconnect structures, and the like, as discussed above. One ormore metal structures 110 may be formed above thedevice layer 105. For example, themetal structures 110 may be electrical contacts and/or interconnects used to provide conductive connections to the integrated circuits in the device layer(s) 105. Themetal structures 110 may also be pads, gates, or the like. The device layer(s) 105 may be formed above a semiconductor substrate (not shown) or above another device layer (not shown). - One or
more passivation layers metal structures 110 and thedevice layer 105. In the illustrated embodiment, thepassivation layers layer 120, anitride passivation layer 125, and apolyimide layer 130. However, it will be appreciated that, in alternative embodiments,fewer passivation layers metal structures 110. For example, thepolyimide layer 130 may not be included. Thepassivation layers - After the
semiconductor device 100 has been formed, typically in a wafer containing manysuch semiconductor devices 100, it may be installed in a package suitable for use in combination with other components, in forming a system, for example. During the packaging process, thepassivation layers semiconductor device 100 may be compromised.FIG. 1B shows an exemplary packagedsemiconductor device 100. To package thesemiconductor device 100, apackage substrate 150 may be deployed above thepassivation layers mold compound 140, such as an epoxy-based compound, may then be injected into the package body in the space between thepackage substrate 150 and thepassivation layers - During the packaging process,
filler particles 160 in themold compound 140 can become trapped between thesemiconductor device 100 and thesubstrate 150. For example, thefiller particles 160 may be SiO2. As themold compound 140 is forced into the space between thesubstrate 150 and thesemiconductor device 100, thefiller particles 160 may be pushed into thepassivation layers arrow 155, may be applied to position thesubstrate 150 above themold compound 140. In response to theforce 155 applied to thesubstrate 150, thefiller particles 160 may exert a force, indicated by thearrow 170, on thepassivation layers - The
force 170 may result in stress fractures in one or more of thepassivation layers passivation layers filler particles 160 may causestress defect failures 175 in thenitride layer 125 and/or theTEOS layer 120, thus adversely affecting themetal structures 110 and/or thedevice layer 105. Thestress defect failures 175 may also create points of failure in themetal structures 110 and/or the various structures that may be formed in thedevice layer 105 and, consequently, thestress defect failures 175 may cause thesemiconductor device 100 to operate in an undesirable manner or to fail altogether. - The present invention is intended to overcome, or at least reduce the effects of, one or more of the above problems.
- In one aspect of the instant invention, a semiconductor device is provided having a protective layer for use in packaging the semiconductor device. The apparatus includes a dielectric layer, a first passivation layer formed above the dielectric layer, and a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
- In a further aspect of the present invention, a method is provided for forming a semiconductor device. The method includes forming a dielectric layer, forming a first passivation layer above the dielectric layer, and forming a protective layer above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
- The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
-
FIG. 1A shows an exemplary prior art semiconductor device; -
FIG. 1B shows an exemplary prior art packaged semiconductor device; and -
FIG. 2 shows an exemplary packaged semiconductor device that includes a protective layer, in accordance with one embodiment of the present invention. - While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
- Illustrative embodiments of the invention are described below. In the interest of clarity, not all details of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which may vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
-
FIG. 2 shows an exemplary packagedsemiconductor device 200. Only those features useful for understanding of the present invention are shown and discussed. Although the various regions and structures of thesemiconductor device 200 are depicted in the drawings as having very precise, sharp configurations and profiles, those skilled in the art recognize that, in reality, these regions and structures are not as precise as indicated in the drawings. Additionally, the relative sizes of the various features depicted in the drawings may be exaggerated or reduced as compared to the sizes of those features on fabricated devices. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present invention. - As discussed previously, the
semiconductor device 200 may include thedevice layer 105. In one embodiment, thedevice layer 105 is a dielectric layer, or a collection of dielectric layers containing a variety of components that may include transistors, interconnect structures, and the like. The various components of thedevice layer 105 may be formed above a silicon substrate and/or another device layer (not shown). In the illustrated embodiment, one ormore metal structures 110 may also be formed above thedevice layer 105. TheTEOS layer 120 may be formed above themetal structures 110 and/or thedevice layer 105 by a variety of processes well-known to those of ordinary skill in the art. The process by which theTEOS layer 120 is formed, as well as the parameters and dimensions of theTEOS layer 120, are not material to the present invention and so will not be described in detail herein. - The
semiconductor device 200 includes afirst passivation layer 125. In the illustrated embodiment, thefirst passivation layer 125 is anitride passivation layer 125 formed above theTEOS layer 120. For example, thenitride passivation layer 125 may be formed of silicon nitride and have a thickness of about 6000 Å. However, it will be appreciated by those of ordinary skill in the art having benefit of the present disclosure that thefirst passivation layer 125 may be formed of other materials and may be thicker or thinner than about 6000 Å. - In various alternative embodiments, the
first passivation layer 125 may be formed by a variety of processes well-known to those of ordinary skill in the art. For example, thefirst passivation layer 125 may be formed using chemical vapor deposition (CVD), low-pressure CVD (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), sputtering and physical vapor deposition (PVD), and the like. Thefirst passivation layer 125 may also be formed using well known spin-on process. Typically, thefirst passivation layer 125 is formed using a relatively low-temperature process because of the potentially adverse effects on various portions of thesemiconductor device 200 of high temperatures at that stage of the fabrication process. However, the present invention is not limited to the use of low temperature processes to form thefirst passivation layer 125. - The
semiconductor device 200 includes aprotective layer 210, in accordance with one embodiment of the present invention. For example, theprotective layer 210 may be formed of silicon carbide and may have a thickness ranging from 1000-3000 Å, however, the present invention is not so limited. In alternative embodiments, theprotective layer 210 may be formed from or include other materials. For example, impurities such as nitrogen may be introduced into theprotective layer 210 to alter physical properties such as the toughness, hardness, adhesion, etchability, and the like. Furthermore, the thickness of theprotective layer 210 may be outside of the range 1000-3000 Å. - In the illustrated embodiment, the
protective layer 210 is formed above thefirst passivation layer 125. Theprotective layer 210 may be deposited above thefirst passivation layer 125 by, for example, a plasma-enhanced chemical vapor deposition (PECVD) process. However, in alternative embodiments, it will be appreciated by those of ordinary skill in the art that other processes, including chemical vapor deposition (CVD), low-pressure CVD (LPCVD), physical vapor deposition (PVD), sputtering, spin-on, and the like, may be used to form theprotective layer 210. - A
second passivation layer 130 may be formed above theprotective layer 210. For example, thesecond passivation layer 130 may be apolymer layer 130 having a thickness ranging from 5000 Å to 500,000 Å. In various alternative embodiments, thepolymer layer 130 may be formed of a polyimide material, a Cardo material, an epoxy material, a benzocyclobutene material, a polybenzoxazole material, a silicon material, and the like. Thesecond passivation layer 130 may be formed by a variety of processes well-known to those of ordinary skill in the art. However, it will be appreciated by those of ordinary skill in the art having benefit of the present disclosure that thesecond passivation layer 130 is not required for the practice of the present invention and may be omitted if so desired. - During packaging, the
filler particles 160 can become trapped between theprotective layer 210 and thesubstrate 150, and thefiller particles 160 may transmit theforce 170 to thesemiconductor device 200 in response to theforce 155, as discussed previously. However, theprotective layer 210 above thefirst passivation layer 125 will make thesemiconductor device 200 more able to withstand theforce 170 and resist, or prevent,stress defect failures 175. In particular, forming a SiCprotective layer 210 above thenitride passivation layer 125 has been demonstrated to reduce the number ofstress defect failures 175. Consequently, forming theprotective layer 210 above thefirst passivation layer 125 may also reduce the number of failures of thesemiconductor device 200 and thereby increase yield and throughput in the semiconductor fabrication process. Furthermore, forming the SiCprotective layer 210 may also improve refresh times in thesemiconductor device 200. - The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Accordingly, the protection sought herein is as set forth in the claims below.
Claims (25)
1. A semiconductor device, comprising:
a dielectric layer;
a first passivation layer formed above the dielectric layer; and
a protective layer formed above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
2. The semiconductor device of claim 1 , wherein the first passivation layer is a silicon nitride passivation layer.
3. The semiconductor device of claim 1 , wherein the protective layer is a silicon carbide protective layer.
4. The semiconductor device of claim 1 , further comprising a plurality of metal structures disposed above a portion of the dielectric layer and below a portion of the first passivation layer.
5. The semiconductor device of claim 1 , further comprising:
a substrate deployed above the protective layer; and
a mold compound deposited between the substrate and the protective layer, wherein the mold compound includes at least one filler particle.
6. The semiconductor device of claim 5 , wherein the mold compound is an epoxy-based compound.
7. The semiconductor device of claim 1 , further comprising a second passivation layer formed above the protective layer.
8. The semiconductor device of claim 7 , wherein the second passivation layer comprises a polymer layer.
9. The semiconductor device of claim 8 , wherein the polymer layer is formed of at least one of a polyimide material, a Cardo material, an epoxy material, a benzocyclobutene material, a polybenzoxazole material, and a silicon material.
10. The semiconductor device of claim 1 , wherein the protective layer has a thickness of about 1000-3000 Å.
11. The semiconductor device of claims 1, wherein the dielectric layer comprises a plurality of transistors and interconnect structures formed above a silicon substrate.
12. A method of forming a semiconductor device, comprising:
forming a dielectric layer;
forming a first passivation layer above the dielectric layer; and
forming a protective layer above the first passivation layer, the protective layer adapted to reduce stress defect failures in the semiconductor device when packaged.
13. The method of claim 12 , wherein forming the first passivation layer comprises forming a silicon nitride passivation layer.
14. The method of claim 13 , wherein forming the silicon nitride passivation layer comprises forming the silicon nitride passivation layer using at least one of a chemical vapor deposition (CVD) process, a low-pressure CVD (LPCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, a physical vapor deposition (PVD) process, and a sputtering process.
15. The method of claim 12 , wherein forming the protective layer comprises forming a silicon carbide protective layer.
14. The method of claim 13 , wherein forming the silicon carbide protective layer comprises forming the silicon carbide protective layer using at least one of a chemical vapor deposition (CVD) process, a low-pressure CVD (LPCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, and a physical vapor deposition (PVD) process, and a sputtering process.
15. The method of claim 12 , wherein forming the protective layer comprises forming the protective layer having a thickness of about 1000-3000 Å.
16. The method of claim 12 , wherein forming the first passivation layer comprises forming the first passivation layer by a spin-on process.
17. The method of claim 12 , wherein forming the protective layer comprises forming the protective layer by a spin-on process.
18. The method of claim 12 , further comprising:
deploying a substrate above the protective layer; and
depositing a mold compound between the substrate and the protective layer, wherein the mold compound includes at least one filler particle.
19. The method of claim 18 , wherein depositing the mold compound comprises depositing an epoxy-based compound.
20. The method of claim 12 , further comprising forming a second passivation layer above the protective layer.
21. The method of claim 20 , wherein forming the second passivation layer comprises forming the second passivation layer having a thickness ranging from about 5000 Å to about 500,000 Å.
22. The method of claim 20 , wherein forming the second passivation layer comprises forming a polymer layer.
23. The method of claim 22 , wherein forming the polymer layer comprises forming the polymer layer from at least one of a polyimide material, a Cardo material, an epoxy material, a benzocyclobutene material, a polybenzoxazole material, and a silicon material.
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US11/080,697 US20050158910A1 (en) | 2003-03-18 | 2005-03-15 | Protective layer for use in packaging a semiconductor die and method for forming same |
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US10/391,080 US6881606B2 (en) | 2003-03-18 | 2003-03-18 | Method for forming a protective layer for use in packaging a semiconductor die |
US11/080,697 US20050158910A1 (en) | 2003-03-18 | 2005-03-15 | Protective layer for use in packaging a semiconductor die and method for forming same |
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US10/391,080 Division US6881606B2 (en) | 2003-03-18 | 2003-03-18 | Method for forming a protective layer for use in packaging a semiconductor die |
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US20050158910A1 true US20050158910A1 (en) | 2005-07-21 |
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US10/391,080 Expired - Lifetime US6881606B2 (en) | 2003-03-18 | 2003-03-18 | Method for forming a protective layer for use in packaging a semiconductor die |
US11/080,697 Abandoned US20050158910A1 (en) | 2003-03-18 | 2005-03-15 | Protective layer for use in packaging a semiconductor die and method for forming same |
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US20090251960A1 (en) * | 2008-04-07 | 2009-10-08 | Halliburton Energy Services, Inc. | High temperature memory device |
CN105448853B (en) * | 2014-08-07 | 2018-09-25 | 北大方正集团有限公司 | A kind of chip and preparation method thereof |
IT201700082500A1 (en) * | 2017-07-20 | 2019-01-20 | Eltek Spa | DEVICE FOR DETECTION OF THE LEVEL OF A MEDIA |
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US20040183163A1 (en) | 2004-09-23 |
US6881606B2 (en) | 2005-04-19 |
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