US20050112333A1 - Method and apparatus for forming high surface area material films and membranes - Google Patents
Method and apparatus for forming high surface area material films and membranes Download PDFInfo
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- US20050112333A1 US20050112333A1 US10/977,735 US97773504A US2005112333A1 US 20050112333 A1 US20050112333 A1 US 20050112333A1 US 97773504 A US97773504 A US 97773504A US 2005112333 A1 US2005112333 A1 US 2005112333A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/8605—Porous electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0438—Processes of manufacture in general by electrochemical processing
- H01M4/044—Activating, forming or electrochemical attack of the supporting material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/88—Processes of manufacture
- H01M4/8803—Supports for the deposition of the catalytic active composition
- H01M4/881—Electrolytic membranes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0407—Methods of deposition of the material by coating on an electrolyte layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
Definitions
- the present invention is directed to the field of high surface area material films and membranes.
- High efficiency catalysts are important in a vast number of applications and processes. Efficient catalysts are necessary for achieving desired performance in fuel cells, organic synthesis, catalytic cracking, auto exhausts, etc.
- One determinant of efficiency is the surface area available for reaction. For example, when catalysts are used with electrodes in electrochemical applications such as fuel cells, electrical and electrochemical energy storage and peak power increases in proportion with increasing surface area of the electrode. Therefore, the ability to easily manufacture high area surfaces with a variety of chemistries is important to the preparation of efficient catalysts.
- the present invention discloses a method and apparatus for producing high surface area material films and membranes on substrates.
- patterns of spikes or bristles are produced on wafers and transferred to films, such as conductive polymer or metal films, by using repetitive and inexpensive processes.
- films such as conductive polymer or metal films
- Such a technique provides low cost, high surface area materials and allows reuse of expensive patterned silicon.
- Membranes with high surface area are extremely valuable in fuel cells since the power density is generally proportional to the surface area and the patterns may be used to cast inexpensive fuel cell electrodes.
- FIG. 1 is an SEM micrograph of a grassy silicon template created according to one embodiment of the invention
- FIG. 2 is an SEM micrograph of one embodiment of the invention showing an electroplated nickel film with a complementary surface pattern
- FIG. 3 illustrates an assembly and embossing process according to one embodiment of the invention.
- the invention exploits the amenability of a silicon surface to topological and chemical modification.
- Plasma etching processes are typically used to create trenches and other features for use in microelectromechanical systems (MEMS); however, these techniques may be adapted to create a textured surface with surface features having at least one of various shapes including: grassy, spiked, stepped, dimpled, pored or bristled.
- An embodiment of the invention utilizes the Advanced Silicon Etch (ASE) process developed by SurfaceTechnology Systems (Newport, UK). The ASE process is based on a sidewall passivation mechanism for etching anisotropic structures.
- Passivation protects the sidewalls of etched structures and inhibits thermal and chemical etching, enabling production of vertical walls and deep trenches. However, non-selective passivation over an entire silicon surface may decrease the etch rate. In ASE, etching and passivation cycles are alternated instead of adding both etchants and passivants to the plasma at once. Typically, oxygen or hydrogen is added to the plasma to form the passivation layer.
- the present invention recognizes the utility of grassy or bristled silicon and utilizes ASE techniques to vary the aspect ratio and density of the spikes or bristles.
- the inventive apparatus and method provides for an inexpensive way of producing high surface area films and submicron structures in many applications.
- SF 6 is used as the etchant and C 4 F 8 is used as the passivant.
- the process conditions are as follows: Total process time 20 min Etch cycle 9 sec Passivation cycle 9 sec Etch gas SF 6 at 130 sccm Passivation gas C 4 F 8 at 85 sccm Etch pressure 25 mtorr Passivation pressure 12 mtorr Temperature ⁇ 25-30° C. Coil Power 600 W Platen Power 6-10 W
- FIG. 1 shows that the techniques of the invention may be used to generate grassy silicon with submicron features and aspect ratios of 1:10, 1:50, or even greater. Use of non-oxygen containing gases in the plasma not only facilitates the formation of grassy structures but allow formation of structures with high surface areas.
- FIG. 2 is an SEM micrograph of an electroplated nickel film with a complementary surface to that shown in FIG. 1 .
- a nickel film was deposited by electroplating on the silicon wafer having the bristled pattern shown in FIG. 1 .
- the electroplated nickel film was then removed to reveal the complementary surface shown in FIG. 2 .
- the deposited material may be a conductive polymer such as Nafion®.
- biological molecules such as DNA, RNA, amino acids, proteins, enzymes, antibodies, lipids, carbohydrates, etc. may be deposited onto the silicon spikes or onto a coating previously disposed on the silicon surface for use in biological probes.
- Graphite may also be deposited on the surface to form an electrical probe.
- the invention provides for the manufacture of low cost, high surface area materials and allows reuse of expensive patterned silicon.
- Such membranes with high surface area are extremely valuable in fuel cells since the power density is generally proportional to the surface area and the patterns may be used to cast inexpensive fuel cell electrodes.
- Experiments using palladium deposition followed by treatment with hydrogen and reaction with oxygen have shown very high catalytic activity similar to the original silicon wafer. Indeed, the embossing experiments performed showed transfer of pattern at sub-micron levels from silicon to polymer.
- the wells created by the spikes of sub-micron dimension are abundant and contribute to the higher surface area. This method lends itself for ready adaptation to roll-to-roll processing and provides the way for mass forming high activity electrodes.
- Standard chemical techniques may be used to modify the etched silicon or coated surface.
- metals, inorganic materials, or organometallic molecules may be adsorbed onto the surface or the silicon surface itself may be modified chemically, for example, through formation of an oxide layer.
- Electrochemical techniques may be used to deposit various materials, such as oxidative catalysts for fuel cells.
- Electroless deposition techniques may be used to deposit metals on the surface.
- Organosilanes may be attached to the surface to form self-assembled monolayers, or SAMs. These SAMs may be further modified by standard chemical techniques.
- FIG. 3 illustrates an assembly and embossing process according to one embodiment of the invention.
- FIG. 3A shows the preparation of a silicon wafer 10 with a bristled pattern 12 for embossing a film 20 .
- FIG. 3B shows the whole assembly 60 used for the embossing process.
- FIG. 3C shows embossed film 20 having a surface pattern 22 that is a complementary reproduction of the bristled pattern 12 in the silicon wafer 10 .
- the silicon wafer 10 having bristled surface pattern 12 was sputtered with approximately 250 Angstroms platinum on one side and a plain “flat” silicon wafer 14 with similar treatment was used for the embossing of the other side (as described in a later example, surface pattern 12 could also potentially be sputtered with multiple layers, such as stainless steel 316 on top of the platinum layer).
- a film 20 e.g. conductive polymer Nafion® 117 film
- the wafer assembly 30 was mounted between steel plates 40 and put into a small ‘shop vice’ 50 .
- the whole assembly 60 was put in an oven at 140° C. for 1 hour.
- the whole assembly 60 was cooled and the wafer assembly 30 was soaked in water until the silicon wafers fell off to produce the embossed film 20 having a surface pattern 22 that is a complementary reproduction of the bristled pattern 12 in the silicon wafer.
- Scanning Electron Micrographs showed the film to be complementary to the respective silicon patterns demonstrating a “hand to glove” type of pattern reproducibility at nanometer scale.
- the side of the film embossed with the “flat” silicon showed very small surface features in comparison to the bristled pattern side.
- sputtering depositions are possible.
- a grassy silicon wafer sputtered with about 250 angstroms of platinum was subsequently sputtered with stainless steel 316 with average thickness of about 220 angstroms.
- Scanning Electron Micrographs showed the coating to be completely conformal to the grassy pattern.
- the wafer was subjected to a nickel electroplating bath to deposit approximately 10 microns of film.
- the film was separated from the wafer “mandrel” showing “hand to glove” pattern reproducibility at nanometer scale.
Abstract
The present invention discloses a method and apparatus for producing high surface area material films and membranes on substrates. In one application, patterns of spikes or bristles are produced on wafers and transferred to films, such as conductive polymer or metal films, by using repetitive and inexpensive processes, such as electroplating and embossing. Such a technique provides low cost, high surface area materials and allows reuse of expensive patterned silicon. Membranes with high surface area are extremely valuable in fuel cells since the power density is generally proportional to the surface area and the patterns may be used to cast inexpensive fuel cell electrodes.
Description
- The present invention is directed to the field of high surface area material films and membranes.
- High efficiency catalysts are important in a vast number of applications and processes. Efficient catalysts are necessary for achieving desired performance in fuel cells, organic synthesis, catalytic cracking, auto exhausts, etc. One determinant of efficiency is the surface area available for reaction. For example, when catalysts are used with electrodes in electrochemical applications such as fuel cells, electrical and electrochemical energy storage and peak power increases in proportion with increasing surface area of the electrode. Therefore, the ability to easily manufacture high area surfaces with a variety of chemistries is important to the preparation of efficient catalysts.
- The present invention discloses a method and apparatus for producing high surface area material films and membranes on substrates. In one application, patterns of spikes or bristles are produced on wafers and transferred to films, such as conductive polymer or metal films, by using repetitive and inexpensive processes. Such a technique provides low cost, high surface area materials and allows reuse of expensive patterned silicon. Membranes with high surface area are extremely valuable in fuel cells since the power density is generally proportional to the surface area and the patterns may be used to cast inexpensive fuel cell electrodes.
- The invention is described with reference to the several figures of the drawing, in which:
-
FIG. 1 is an SEM micrograph of a grassy silicon template created according to one embodiment of the invention; -
FIG. 2 is an SEM micrograph of one embodiment of the invention showing an electroplated nickel film with a complementary surface pattern; -
FIG. 3 illustrates an assembly and embossing process according to one embodiment of the invention. - Referring now to the figures of the drawing, the figures constitute a part of this specification and illustrate exemplary embodiments to the invention. It is to be understood that in some instances various aspects of the invention may be shown exaggerated or enlarged to facilitate an understanding of the invention.
- The invention exploits the amenability of a silicon surface to topological and chemical modification. Plasma etching processes are typically used to create trenches and other features for use in microelectromechanical systems (MEMS); however, these techniques may be adapted to create a textured surface with surface features having at least one of various shapes including: grassy, spiked, stepped, dimpled, pored or bristled. An embodiment of the invention utilizes the Advanced Silicon Etch (ASE) process developed by SurfaceTechnology Systems (Newport, UK). The ASE process is based on a sidewall passivation mechanism for etching anisotropic structures. Anisotropy is defined as:
A=1−V i /V v
where Vi is the lateral etch rate and Vv is the vertical etch rate. Passivation protects the sidewalls of etched structures and inhibits thermal and chemical etching, enabling production of vertical walls and deep trenches. However, non-selective passivation over an entire silicon surface may decrease the etch rate. In ASE, etching and passivation cycles are alternated instead of adding both etchants and passivants to the plasma at once. Typically, oxygen or hydrogen is added to the plasma to form the passivation layer. - Previous investigators have recognized that silicon structures other than vertical trenches may have practical applications. For example, black silicon, whose surface has tall spikes that are longer than the wavelength of visible light, is useful for anti-reflective coatings. However, most refinement of plasma etching techniques has aimed to reduce production of grassy silicon.
- The present invention recognizes the utility of grassy or bristled silicon and utilizes ASE techniques to vary the aspect ratio and density of the spikes or bristles. The inventive apparatus and method provides for an inexpensive way of producing high surface area films and submicron structures in many applications. In one exemplary embodiment, SF6 is used as the etchant and C4F8 is used as the passivant. The process conditions are as follows:
Total process time 20 min Etch cycle 9 sec Passivation cycle 9 sec Etch gas SF6 at 130 sccm Passivation gas C4F8 at 85 sccm Etch pressure 25 mtorr Passivation pressure 12 mtorr Temperature ˜25-30° C. Coil Power 600 W Platen Power 6-10 W - These conditions result in spikes about 200 nm high. Adjustment of the processing parameters will change both the dimensions of the spikes and their aspect ratios.
FIG. 1 shows that the techniques of the invention may be used to generate grassy silicon with submicron features and aspect ratios of 1:10, 1:50, or even greater. Use of non-oxygen containing gases in the plasma not only facilitates the formation of grassy structures but allow formation of structures with high surface areas. - The grassy structures are then coated with a catalytic material, for example, ruthenium, rhodium, cobalt, iron, nickel, palladium, rhenium, osmium, platinum, tungsten, or alloys thereof. Chemical vapor deposition, sputtering, evaporation, embossing and electroplating are examples of techniques that may be used to deposit catalytic or other materials on the grassy surface. The catalytic material film is then separated from the grassy surface silicon wafer.
FIG. 2 is an SEM micrograph of an electroplated nickel film with a complementary surface to that shown inFIG. 1 . A nickel film was deposited by electroplating on the silicon wafer having the bristled pattern shown inFIG. 1 . The electroplated nickel film was then removed to reveal the complementary surface shown inFIG. 2 . - In other embodiments, the deposited material may be a conductive polymer such as Nafion®. Alternatively, biological molecules such as DNA, RNA, amino acids, proteins, enzymes, antibodies, lipids, carbohydrates, etc. may be deposited onto the silicon spikes or onto a coating previously disposed on the silicon surface for use in biological probes. Graphite may also be deposited on the surface to form an electrical probe.
- By using repetitive and inexpensive processes such as embossing or electroplating to transfer the bristled surface pattern to material films, the invention provides for the manufacture of low cost, high surface area materials and allows reuse of expensive patterned silicon. Such membranes with high surface area are extremely valuable in fuel cells since the power density is generally proportional to the surface area and the patterns may be used to cast inexpensive fuel cell electrodes. Experiments using palladium deposition followed by treatment with hydrogen and reaction with oxygen have shown very high catalytic activity similar to the original silicon wafer. Indeed, the embossing experiments performed showed transfer of pattern at sub-micron levels from silicon to polymer. The wells created by the spikes of sub-micron dimension (e.g., spikes having diameters of less than 1 micron) are abundant and contribute to the higher surface area. This method lends itself for ready adaptation to roll-to-roll processing and provides the way for mass forming high activity electrodes.
- One skilled in the art will recognize that a wide variety of surface modification techniques may be used to deposit materials on the spikes. Standard chemical techniques may be used to modify the etched silicon or coated surface. For example, metals, inorganic materials, or organometallic molecules may be adsorbed onto the surface or the silicon surface itself may be modified chemically, for example, through formation of an oxide layer. Electrochemical techniques may be used to deposit various materials, such as oxidative catalysts for fuel cells. Electroless deposition techniques may be used to deposit metals on the surface. Organosilanes may be attached to the surface to form self-assembled monolayers, or SAMs. These SAMs may be further modified by standard chemical techniques.
-
FIG. 3 illustrates an assembly and embossing process according to one embodiment of the invention.FIG. 3A shows the preparation of asilicon wafer 10 with a bristledpattern 12 for embossing afilm 20.FIG. 3B shows thewhole assembly 60 used for the embossing process.FIG. 3C shows embossedfilm 20 having asurface pattern 22 that is a complementary reproduction of the bristledpattern 12 in thesilicon wafer 10. In one example, thesilicon wafer 10 having bristledsurface pattern 12 was sputtered with approximately 250 Angstroms platinum on one side and a plain “flat”silicon wafer 14 with similar treatment was used for the embossing of the other side (as described in a later example,surface pattern 12 could also potentially be sputtered with multiple layers, such as stainless steel 316 on top of the platinum layer). A film 20 (e.g. conductive polymer Nafion® 117 film) was sandwiched between the respective surfaces to form awafer assembly 30. Thewafer assembly 30 was mounted betweensteel plates 40 and put into a small ‘shop vice’ 50. Thewhole assembly 60 was put in an oven at 140° C. for 1 hour. Thewhole assembly 60 was cooled and thewafer assembly 30 was soaked in water until the silicon wafers fell off to produce the embossedfilm 20 having asurface pattern 22 that is a complementary reproduction of the bristledpattern 12 in the silicon wafer. Scanning Electron Micrographs showed the film to be complementary to the respective silicon patterns demonstrating a “hand to glove” type of pattern reproducibility at nanometer scale. The side of the film embossed with the “flat” silicon showed very small surface features in comparison to the bristled pattern side. - Multiple sputtering depositions are possible. In another example, a grassy silicon wafer sputtered with about 250 angstroms of platinum was subsequently sputtered with stainless steel 316 with average thickness of about 220 angstroms. Scanning Electron Micrographs showed the coating to be completely conformal to the grassy pattern. The wafer was subjected to a nickel electroplating bath to deposit approximately 10 microns of film. The film was separated from the wafer “mandrel” showing “hand to glove” pattern reproducibility at nanometer scale.
- Other embodiments of the invention will be apparent to those skilled in the art from a consideration of the specification or practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the invention being indicated by the following claims.
Claims (27)
1-11. (canceled)
12. A method of producing a high surface area film comprising:
providing a wafer with a textured surface;
depositing a material onto the wafer to form a film; and
separating the film form the wafer, wherein a surface pattern of said texture surface is reproduced on said film.
13. The method of claim 12 wherein the textured surface comprises surface features having shapes selected from the group consisting of bristles, spikes, grass, steps, dimples and pores.
14. The method of claim 13 wherein the shapes are bristles.
15. The method of claim 12 , wherein the surface pattern of the textured surface is reproduced on the film within nanometer scale.
16. The method of claim 12 wherein said deposited material is selected from the group consisting of: a metal, a conductive polymer, and a biological material.
17. The method of claim 16 wherein said metal is selected from the group consisting of: ruthenium, rhodium, cobalt, iron, nickel, palladium, rhenium, osmium, platinum, and tungsten, and alloys thereof.
18. The method of claim 16 wherein said conductive polymer is Nafion®.
19. The method of claim 16 where said biological material is selected from the group consisting of: a lipid, a protein, an enzyme, an antibody, DNA, RNA, an amino acid, and a carbohydrate.
20. The method of claim 12 , further comprising preparing the surface of the wafer for film deposition by applying at least one preparation material onto the wafer.
21. The method of claim 20 , wherein said at least one preparation material is selected from the group consisting of: stainless steel, ruthenium, rhodium, cobalt, iron, nickel, palladium, rhenium, osmium, platinum, tungsten, and alloys thereof.
22. The method of claim 12 , wherein said step of depositing material comprises electroplating.
23. The method of claim 12 , wherein the film has a thickness of about 10 microns.
24. A method of producing a high surface area film comprising:
providing a first wafer with a first textured surface;
providing a second wafer with a second textured surface;
embossing a film between the first and second wafers; and
removing the embossed film, wherein a surface pattern of the first and second wafer is reproduced on the film.
25. The method of claim 24 , wherein the first and second textured surfaces comprise surface features having shapes selected from the group consisting of bristles, spikes, grass, steps, dimples and pores.
26. The method of claim 25 wherein the shapes are bristles.
27. The method of claim 24 , wherein the step of embossing comprises:
preparing the film for embossing by inserting the film between the first and second wafers to create a wafer assembly;
securing the wafer assembly between metal plates to create a plate assembly; and
applying pressure to the plate.
28. The method of claim 27 , wherein the step of removing the embossed film comprises:
heating the plate assembly, wherein the film deforms; and
cooling the wafer assembly, wherein the first and second wafers fall away from the film.
29. The method of claim 28 wherein the step of cooling the wafer assembly is performed in liquid.
30. A method of producing a high surface area film, comprising:
repeatedly forming surface features on a surface by first etching the surface with an inorganic halide plasma and then depositing a passivation layer onto said etched surface by means of an organic halide plasma;
depositing a catalytic material onto the passivation layer to form a film;
separating said catalytic material film from said passivation layer, wherein said catalytic material fim reproduces said surface features.
31. The method of claim 30 wherein the surface comprises surface features having shapes selected from the group consisting of bristles, spikes, grass, steps, dimples and pores.
32. The method of claim 31 wherein the shapes are bristles.
33. The method of claim 30 wherein said surface features comprise spikes having a diameter less than 1 micron.
34. The method of claim 30 wherein said deposited material is selected from the group consisting of: a metal, a conductive polymer, and a biological material.
35. The method of claim 34 wherein said metal is selected from the group consisting of: ruthenium, rhodium, cobalt, iron, nickel, palladium, rhenium, osmium, platinum, and tungsten, and alloys thereof.
36. The method of claim 34 wherein said conductive polymer is Nafion®.
37. The method of claim 34 wherein said biological material is selected from the group consisiting of: a lipid, a protein, an enzyme, an anibody, DNA, RNA, an amino acid, and a carybohydrate.
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US20060275647A1 (en) * | 2005-06-06 | 2006-12-07 | Caine Finnerty | Textile derived solid oxide fuel cell system |
US20070065749A1 (en) * | 2005-09-21 | 2007-03-22 | Vladek Kasperchik | Radiation-markable coatings for printing and imaging |
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Also Published As
Publication number | Publication date |
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US20040048466A1 (en) | 2004-03-11 |
EP1400330A1 (en) | 2004-03-24 |
JP2004103587A (en) | 2004-04-02 |
US6946362B2 (en) | 2005-09-20 |
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