US20050046816A1 - Multiple mask step and scan aligner - Google Patents
Multiple mask step and scan aligner Download PDFInfo
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- US20050046816A1 US20050046816A1 US10/965,421 US96542104A US2005046816A1 US 20050046816 A1 US20050046816 A1 US 20050046816A1 US 96542104 A US96542104 A US 96542104A US 2005046816 A1 US2005046816 A1 US 2005046816A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Definitions
- the invention relates to a method of fabricating semiconductor structures, and more particularly, to an optical lithographic exposure apparatus with a multiple mask capability suitable for double-exposure processes in the manufacture of integrated circuits.
- k 1 CD ⁇ NA ⁇
- CD critical dimension of the line feature
- NA the numerical aperture
- ⁇ the wavelength of the exposure light. For example, if the exposure wavelength is 193 nanometers and the NA is 0.63, then k 1 is 0.39.
- extremely aggressive image enhancing techniques have to be used to produce usable images for IC manufacture.
- One such technique is the use of double exposures with two different masks.
- an alternating phase shifting mask may be used when the desired feature size of an integrated circuit layer is on the same order of magnitude as the wavelength of light used in the photolithographic process. If a PSM is used, then a second exposure from a binary intensity mask (BIM) must be performed to remove any extra lines caused by the phase shifting interference at the feature boundaries.
- PSM alternating phase shifting mask
- BIM binary intensity mask
- layer features, or traces are formed on the mask in an opaque material such as chrome.
- This chrome layer is formed overlying a transparent quartz substrate.
- Light is shown through this mask to expose a photosensitive material, commonly photoresist, as defined by the mask pattern. After the photoresist is developed, the photoresist will reflect a copy or a reverse copy of the mask pattern.
- phase shifting mask an additional component is added to the chrome and quartz system. Either through the application of an additional transparent layer or the through the removal of a portion of the quartz layer to a specific depth, the optical properties are changed in a part of the transparent (not covered by chrome) sections of the mask. Specifically, when light of the lithographic wavelength is shown through the mask, a phase shift is created between light waves that pass through the phase shifted area and the light waves that pass through the non-phase shifted area. By shifting the phase of the light by 180 degrees, nodes, or cancellations of energy will occur at opaque boundaries between the phase shifted and non-phase shifted areas. This principle is used to create more sharply defined boundary conditions during the photolithographic exposure. Sharper definition leads to improved pattern transfer.
- phase shifting mask BIM
- binary intensity mask BIM
- FIG. 1 an alternating PSM mask 10 is shown for a simple feature.
- a chrome line 14 is formed on the mask.
- the chrome 14 is opaque and reflects exposure light away from the semiconductor wafer.
- the transparent regions of the mask 10 are divided into a zero degree, or non-phase shifting, region 18 and a 180 degree, or phase shifting, region 22 .
- the phase shifting region 22 is specially treated to cause the transmitted exposure light to be shifted 180 degrees with respect to transmitted exposure light traveling through the non-phase shifting region 18 .
- the purpose of the BIM mask 30 is to remove any extra lines caused by the interference of the phase shifted light and non-phase shifted light at the boundaries of each region.
- the BIM mask 30 contains a chrome feature 34 overlying the transparent substrate 38 .
- the feature 34 is an appropriately oversized copy of the critical PSM feature of the PSM mask.
- the PSM mask and the BIM mask are used sequentially.
- the semiconductor wafer is coated with a photoresist layer.
- the PSM mask of FIG. 1 is loaded into the mask stage of the optical lithographic stepper and aligned.
- the photoresist layer is then exposed, field by field, to actinic light through the PSM mask.
- the PSM mask is replaced with the BIM mask of FIG. 2 .
- the BIM mask must be aligned.
- the undeveloped photoresist layer is exposed, field-by-field, to actinic light through the BIM layer. At the end of the process, every field has been exposed to thereby superimpose the patterns of the PSM mask and the BIM mask in every field.
- the photoresist layer 54 is developed.
- the photoresist layer 54 exhibits a very defined pattern overlying the semiconductor substrate 50 .
- the double-exposure method enables the creation of smaller line widths than possible with a single, non-phase shifted exposure.
- a conventional stepper is used for this process, the operator must first install and then align the first mask. After exposing through the first mask, the operator must remove the first mask and install the second mask. This is because the conventional stepper can only hold and align a single mask at a time. The second mask must be aligned prior to the second exposure. It would be very advantageous and cost saving to eliminate a reticle change and alignment from the double-exposure process.
- U.S. Pat. No. 5,989,761 to Kawakubo et al teaches a method to expose photolithographic masks onto a substrate. First and second masks, corresponding to different substrate layers, are used. The first and second masks are exposed with different apparatus having different exposure field sizes. The first mask is exposed on the first apparatus. A perpendicular error and a mean value of rotation are detected for the first exposure. The second mask is rotated based on the detected error of the first mask to compensate and correct the error.
- U.S. Pat. No. 5,847,813 to Hirayanagi discloses a mask holding apparatus for lithographic exposure masks.
- the apparatus adds an inner frame to the conventional outer frame to thereby improve support, thermal transfer, and electrical grounding.
- U.S. Pat. No. 4,924,258 to Tsutsui teaches a mask holding and conveying mechanism.
- the mask holding mechanism comprises a reference member, an aperture, a spring-biased first member, and a spring-biased second member.
- a principal object of the present invention is to provide an effective optical lithographic exposure apparatus and method of use thereof for patterning a photoresist layer in the manufacture of an integrated circuit device.
- a further object of the present invention is to provide an exposure apparatus capable of holding two masks in a fixed relative position for sequential exposure of the mask patterns onto a semiconductor wafer.
- a yet further object of the present invention is to provide an exposure apparatus capable of aligning two masks prior to the sequential exposure of the mask patterns onto a semiconductor wafer to thereby save time.
- Another yet further object of the present invention is to provide an exposure apparatus capable of independently aligning two masks.
- Another further object of the present invention is to provide an effective and very manufacturable method to pattern a photoresist layer wherein the photoresist layer is sequentially exposed to actinic light through two different masks.
- Another yet further object of the present invention is to use a two mask holding apparatus to sequentially expose the photoresist layer through a PSM mask and through a BIM mask to thereby enhance the image of the pattern.
- Another yet further object of the present invention is to expose sequentially the photoresist layer through the first mask and the second mask without a mask change and alignment to thereby save time.
- a new optical lithographic exposure apparatus may comprise step and scan capability.
- a wafer stage comprises a means of supporting a semiconductor wafer.
- a mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask.
- the mask stage may further comprise an independent means of aligning each mask.
- a light source comprises a means to selectively shine actinic light through either the first mask or the second mask.
- An imaging lens is capable of focusing the actinic light onto the semiconductor wafer.
- a means of stepping the mask stage across the semiconductor wafer is provided.
- a new method to pattern a photoresist layer in the manufacture of an integrated circuit device is achieved.
- a photoresist layer is deposited overlying a semiconductor substrate.
- a first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus having a step and scan capability.
- the mask stage maintains a fixed relative position between the first mask and the second mask.
- the first mask and the second mask are aligned.
- the wafer is indexed to a starting field that becomes the current field.
- the first mask is scanned to expose the current field.
- the wafer is then indexed to a next field unexposed by the first mask.
- the stepping and scanning is repeated until every field on the semiconductor substrate is exposed with the first mask.
- the wafer is then indexed to the starting field that becomes the current field.
- the second mask is scanned to expose the current field.
- the wafer is then indexed to a next field unexposed by the second mask.
- the stepping and scanning is repeated until every field on the semiconductor substrate is exposed with the second mask.
- the patterns of the first mask and the second mask are thereby superimposed in every field.
- the photoresist layer is developed to thereby complete the patterning in the manufacture of the integrated circuit device.
- a new method to pattern a photoresist layer in the manufacture of an integrated circuit device is achieved.
- a photoresist layer is deposited overlying a semiconductor substrate.
- a first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus having a step and scan capability.
- the mask stage maintains a fixed relative position between the first mask and the second mask.
- the first mask and the second mask are aligned.
- the wafer is indexed to a starting field that becomes the current field.
- the first mask is scanned to expose the current field.
- the second mask is scanned to expose the adjacent field.
- the wafer is stepped to a next field unexposed by the first mask.
- the stepping and scanning is repeated until every field on the semiconductor substrate is exposed.
- the wafer is indexed to the starting field.
- the wafer is then stepped to a next field unexposed by the second mask to become the current field.
- the second mask is scanned to expose the current field.
- the wafer is then indexed to the next field unexposed by the first mask to become the current field.
- the first mask is scanned to expose the current field.
- the stepping and scanning is repeated until every field on the semiconductor substrate is exposed.
- the patterns of the first mask and the second mask are thereby superimposed in every field.
- the photoresist layer is developed to thereby complete the patterning in the manufacture of the integrated circuit device.
- FIG. 1 illustrates in simplified form an alternating phase shifting mask (PSM).
- PSM phase shifting mask
- FIG. 2 illustrates in simplified form a binary intensity mask (BIM).
- BIM binary intensity mask
- FIG. 3 illustrates in simplified form a photoresist feature formed by double-exposure using the PSM mask of FIG. 1 and the BIM mask of FIG. 2 .
- FIG. 4 illustrates in simplified form the key components of the preferred embodiment of the optical stepper apparatus of the present invention.
- FIGS. 5 and 6 illustrate two configurations of a mask stage for the preferred embodiment apparatus of the present invention.
- FIG. 7 illustrates the optional addition of a viewing microscope with alignment marks to the apparatus of the present invention.
- FIG. 8 illustrates, in flow chart form, a first preferred embodiment of the method of the present invention.
- FIGS. 9 and 10 illustrate a semiconductor wafer processed by the first preferred embodiment of the method of the present invention.
- FIG. 11 illustrates, in flow chart form, a second preferred embodiment of the method of the present invention.
- FIGS. 12 through 14 illustrate a semiconductor wafer processed by the second preferred embodiment of the method of the present invention.
- the embodiments disclose an optical lithographic exposure apparatus with a novel mask stage capable of holding and aligning two masks at a time.
- This apparatus may comprise, for example, an optical stepper or scanner. Further, it is preferred that the exposure apparatus have a step and scan capability.
- This apparatus is ideally suited for double-exposure processing in the manufacture of an integrated circuit device.
- two methods for double exposing using a two-mask step and scan process are described. It should be clear to those experienced in the art that the present invention can be applied and extended without deviating from the scope of the present invention.
- FIG. 4 a simplified form of the preferred embodiment of the apparatus of the present invention illustrated.
- This apparatus adds the ability to load and align two masks and then expose a semiconductor wafer using each of these reticles without a time consuming mask change and alignment step.
- the semiconductor wafer 274 is supported on a wafer stage 276 .
- This mask stage 250 comprises a means of holding a first mask 262 and a second mask 260 .
- Each mask 260 and 262 is held in a separate fixture 256 and 258 in the mask stage 250 .
- Each mask 260 and 262 can be independently aligned to the wafer 274 and to the other mask. Once aligned, the mask stage 250 maintains the fixed relative position between the first mask 262 and the second mask 262 .
- the ability to independently hold and align the two masks 260 and 262 allows an operator to load both masks at the beginning of the lithographic operation. Both masks 260 and 262 are then aligned. Each mask can then be used for exposing fields on the semiconductor wafer 272 without a time consuming mask change therebetween.
- a light source 254 comprises a means of selectively shining actinic light through either the first mask 262 or the second mask 260 .
- the light source 254 may comprise, for example, a laser-based source with a specific light wavelength. In the preferred embodiment, the light source 254 comprises a wavelength of 193 nanometers.
- the light source 254 may include an optical circuit capable of flashing the actinic light for a specific length of time.
- An imaging lens 270 is capable of focusing the actinic light that passes through either of the masks 260 and 262 onto the semiconductor wafer 274 .
- the imaging lens 270 and the mask stage 250 are linked such that the image of the exposed mask will be focused onto a particular field of the wafer 274 during each exposure step. Further, the imaging lens 270 and the mask stage 250 can be stepped, or indexed, from field to field across the semiconductor wafer.
- the preferred application of the stepper apparatus having a two-mask stage 250 is the double-exposure process described in FIGS. 1 through 3 .
- an alternating PSM mask of the type shown in FIG. 1 may be loaded into the first mask fixture 258 .
- a binary intensity mask (BIM) of the type shown in FIG. 2 may be loaded into the second mask fixture 256 .
- Both masks 260 and 262 are then aligned.
- the apparatus may then be used to sequentially expose every field on the semiconductor wafer to actinic light through both the PSM mask 262 and the BIM mask 260 such that the patterns of each mask are superimposed on each field.
- the novel ability to hold two masks, to maintain a fixed relational position between the two masks, and to align both masks prior to exposure provides a significant flexibility and time savings for the operator.
- the exposure apparatus of the present invention exposes single fields 404 across the wafer. When fields are completed, the stepper indexes to the next field until the entire wafer is exposed. Each field may comprise several integrated circuit die.
- the preferred embodiment exposure apparatus comprises a step and scan capability. Step and scan uses an illuminated slot which is scanned over the mask to expose the wafer. While the lens remains stationary, the mask and wafer move in a controlled fashion. The wafer is stepped to a field and then the mask is scanned. In a 4 ⁇ system, for example, the mask moves 4 times faster than the wafer.
- the novel mask stage 250 is configured such that the first mask 262 and the second mask 260 are placed side-by-side in the same direction as the scanning direction.
- the first mask and second mask may be configured across the scanning direction.
- the mask stage 100 is configured such that the fixed relative position between the first mask 104 and the second mask 108 is consistent with the scanning direction. Further, the first mask 104 and the second mask 108 are adjacent to each other and in the same plane (coplanar).
- Each wafer fixture 112 and 116 in the mask stage 100 has a set of independent alignment controls.
- the first fixture 112 may have an ‘x’ lateral control 124 and a ‘y’ lateral control 120 , or both.
- the second fixture 116 may have an ‘x’ lateral control 132 and a ‘y’ lateral control 128 , or both.
- the first fixture 112 and the second fixture 116 may have angular controls 126 and 134 to adjust the angle of placement ( ⁇ ) of each mask.
- the alignment controls are used to carefully align the mask alignment marks 144 and 148 on the masks 104 and 108 with the wafer alignment marks. These alignment controls may comprise mechanical actuators or electromechanical actuators. Once aligned, the mask stage 100 maintains alignment.
- the mask stage 100 is shown in a second scanning configuration.
- the mask stage 100 is configured such that the fixed relative position between the first mask 104 and the second mask 108 is perpendicular with the scanning direction. Again, the first mask 104 and the second mask 108 are adjacent to each other and in the same plane (coplanar).
- a microscope viewer 216 provides a complimentary alignment and viewing means for the operator.
- the operator uses the microscope view 216 to register the alignment marks 208 and 212 on the masks 200 and 204 with complimentary alignment marks on the microscope objectives. This enables an off-axis alignment mechanism for the operator.
- the two-mask stage of the present invention may be extended to a multiple mask stage by adding an additional mask fixture and alignment system.
- the first mask, second mask, and additional mask would be held in a fixed relative position after alignment to facilitate a sequential exposure of a wafer using each mask.
- FIG. 8 a first preferred embodiment of a method to pattern a photoresist layer in the manufacture of an integrated circuit device is shown.
- This method uses the novel two-mask stage of the apparatus of the present invention to improve the double-exposure scenario outlined in FIGS. 1 through 3 .
- a photoresist layer is deposited overlying a semiconductor substrate in step 500 .
- the first mask and the second mask are loaded into the novel two-mask stage in step 504 .
- the consistent ( FIG. 5 ) or the perpendicular ( FIG. 6 ) mask configuration may be used.
- the first mask and the second mask are aligned in step 508 .
- the first mask scan is now performed. First, the wafer is indexed to the starting field to set the current field location in step 512 . Referring to FIG. 9 , the starting field 406 is the uppermost, left-side field of the wafer. Referring again to FIG. 8 , the first mask is scanned to expose the current field in step 516 . The wafer is then stepped to the next field unexposed by the first mask to set a new current field in step 520 . The scanning (step 516 ) and stepping (step 520 ) are repeated until all the fields on the wafer are exposed.
- a top view of the semiconductor wafer 400 is shown at the end of step 520 . Every field 404 in the wafer has been exposed through the first mask at this point in the method.
- the second mask scan is now performed.
- the wafer is returned to the starting field 406 (in FIG. 9 ) to set the current field in step 524 .
- the second mask is scanned to expose the current field in step 528 .
- the wafer is then stepped to the next field unexposed by the second mask to set a new current field in step 532 .
- the scanning (step 528 ) and stepping (step 532 ) are repeated until all the fields on the wafer are exposed.
- the semiconductor wafer 400 is shown at the end of step 532 . Every field 404 has now been exposed through the second mask. Now, the pattern of the first mask and the second mask is superimposed on every field 404 of the wafer 400 .
- the photoresist layer is developed to complete the method of patterning in step 536 .
- FIG. 11 a second preferred embodiment of a method to pattern a photoresist layer in the manufacture of an integrated circuit device is shown.
- This method again uses the novel two-mask stage of the apparatus of the present invention to improve the double-exposure scenario outlined in FIGS. 1 through 3 .
- a photoresist layer is deposited overlying a semiconductor substrate in step 600 .
- the first mask and the second mask are loaded into the novel two-mask stage in step 604 .
- Note that, in this second embodiment of the double-exposure method only the consistent ( FIG. 5 ) mask configuration may be used.
- the first mask and the second mask are aligned in step 608 .
- the wafer is indexed to the starting field to set the current field in step 612 .
- the starting field 306 is the uppermost, left-side field of the wafer.
- the first mask is scanned to expose the current field in step 616 .
- the second mask is scanned to expose the adjacent field in step 620 . Note that it is not necessary to step the mask stage to do this exposure since the second mask is held adjacent to the first mask and is already positioned to expose the field adjacent to the field exposed through the first mask.
- the wafer is now stepped to the next field unexposed by the first mask to set a new current field in step 624 .
- the scanning (step 616 and step 620 ) and stepping (step 624 ) are repeated until all the fields on the wafer are exposed.
- a top view of the semiconductor wafer 300 is shown at the end of step 624 . Every field on the wafer has been exposed through either the first mask 304 or the second mask 308 during this first pass scan.
- the second pass scan is now performed.
- the wafer is returned to the starting field 306 (in FIG. 12 ) to set the current field in step 628 .
- the wafer is stepped to the next field unexposed by the second mask to set a new current field.
- FIG. 13 the next field unexposed by the second mask 309 is shown.
- the second mask is scanned to expose the current field in step 636 .
- the wafer is then stepped to the next field unexposed by the first mask to set a new current field in step 640 .
- the first mask is now scanned to exposed the current field in step 644 .
- the scanning (step 636 and step 644 ) and stepping (step 640 ) are repeated until all the fields on the wafer are exposed.
- the semiconductor wafer 300 is shown at the end of step 644 .
- the pattern of the first mask and the second mask is superimposed on every field 304 and 308 of the wafer 300 . Note that only single mask scans are required at the beginning and ending fields 312 of each row. These single mask exposure fields are called fill-in fields 312 .
- the fill-in fields may be completed using a partial scan wherein the stepper is programmed to single expose the beginning and ending fields 312 with the missing mask.
- the photoresist layer is developed to complete the method of patterning in step 648 .
- the optical lithographic exposure apparatus described provides a significant advantage over the prior art.
- the novel two-mask stage enables a double-exposure process without a time consuming mask change and alignment. This facilitates the use of alternating phase shifting mask (PSM) technology to produce very fine line width features in an integrated circuit manufacturing process.
- PSM phase shifting mask
- the methods of patterning a photoresist layer using the two-mask stage provide a very manufacturable approach to phase shifting mask lithography.
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Abstract
A new optical lithographic exposure apparatus is described. The apparatus may comprise, for example, a lithographic stepper or scanner. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through one of the first mask and the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A step and scan method using the mask stage is provided. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus. The first mask and the second mask are aligned. The first mask is scanned. The wafer is then stepped. The second mask is scanned. By repeating this sequence across the wafer twice, the patterns of the first mask and the second mask are thereby superimposed in every field. The photoresist layer is developed to thereby create the patterning in the manufacture of the integrated circuit device.
Description
- (1) Field of the Invention
- The invention relates to a method of fabricating semiconductor structures, and more particularly, to an optical lithographic exposure apparatus with a multiple mask capability suitable for double-exposure processes in the manufacture of integrated circuits.
- (2) Description of the Prior Art
- As optical lithography is used to delineate 0.1 micron and smaller features, the lithographic tools must work in a low k1 region. The k1, or Rayleigh's coefficient, for resolution, is given by the equation:
where CD is the critical dimension of the line feature, NA is the numerical aperture, and λ is the wavelength of the exposure light. For example, if the exposure wavelength is 193 nanometers and the NA is 0.63, then k1 is 0.39. At such a low k1, extremely aggressive image enhancing techniques have to be used to produce usable images for IC manufacture. One such technique is the use of double exposures with two different masks. - For example, an alternating phase shifting mask (PSM) may be used when the desired feature size of an integrated circuit layer is on the same order of magnitude as the wavelength of light used in the photolithographic process. If a PSM is used, then a second exposure from a binary intensity mask (BIM) must be performed to remove any extra lines caused by the phase shifting interference at the feature boundaries.
- In a typical photolithographic mask, layer features, or traces, are formed on the mask in an opaque material such as chrome. This chrome layer is formed overlying a transparent quartz substrate. Light is shown through this mask to expose a photosensitive material, commonly photoresist, as defined by the mask pattern. After the photoresist is developed, the photoresist will reflect a copy or a reverse copy of the mask pattern.
- However, in a phase shifting mask, an additional component is added to the chrome and quartz system. Either through the application of an additional transparent layer or the through the removal of a portion of the quartz layer to a specific depth, the optical properties are changed in a part of the transparent (not covered by chrome) sections of the mask. Specifically, when light of the lithographic wavelength is shown through the mask, a phase shift is created between light waves that pass through the phase shifted area and the light waves that pass through the non-phase shifted area. By shifting the phase of the light by 180 degrees, nodes, or cancellations of energy will occur at opaque boundaries between the phase shifted and non-phase shifted areas. This principle is used to create more sharply defined boundary conditions during the photolithographic exposure. Sharper definition leads to improved pattern transfer.
- In the case of the PSM method, two distinct reticles, the phase shifting mask (BIM) and binary intensity mask (BIM) are used. Referring now to
FIG. 1 , analternating PSM mask 10 is shown for a simple feature. A chromeline 14 is formed on the mask. Thechrome 14 is opaque and reflects exposure light away from the semiconductor wafer. The transparent regions of themask 10 are divided into a zero degree, or non-phase shifting,region 18 and a 180 degree, or phase shifting,region 22. Thephase shifting region 22 is specially treated to cause the transmitted exposure light to be shifted 180 degrees with respect to transmitted exposure light traveling through the non-phase shiftingregion 18. - Referring now to
FIG. 2 , the BIMmask 30 is illustrated. The purpose of theBIM mask 30 is to remove any extra lines caused by the interference of the phase shifted light and non-phase shifted light at the boundaries of each region. The BIMmask 30 contains achrome feature 34 overlying thetransparent substrate 38. Thefeature 34 is an appropriately oversized copy of the critical PSM feature of the PSM mask. - The PSM mask and the BIM mask are used sequentially. First, the semiconductor wafer is coated with a photoresist layer. Second, the PSM mask of
FIG. 1 is loaded into the mask stage of the optical lithographic stepper and aligned. The photoresist layer is then exposed, field by field, to actinic light through the PSM mask. Third, the PSM mask is replaced with the BIM mask ofFIG. 2 . The BIM mask must be aligned. The undeveloped photoresist layer is exposed, field-by-field, to actinic light through the BIM layer. At the end of the process, every field has been exposed to thereby superimpose the patterns of the PSM mask and the BIM mask in every field. - Referring now to
FIG. 3 , a top view of the semiconductor substrate is shown. Thephotoresist layer 54 is developed. Thephotoresist layer 54 exhibits a very defined pattern overlying thesemiconductor substrate 50. The double-exposure method enables the creation of smaller line widths than possible with a single, non-phase shifted exposure. - If a conventional stepper is used for this process, the operator must first install and then align the first mask. After exposing through the first mask, the operator must remove the first mask and install the second mask. This is because the conventional stepper can only hold and align a single mask at a time. The second mask must be aligned prior to the second exposure. It would be very advantageous and cost saving to eliminate a reticle change and alignment from the double-exposure process.
- Several prior art approaches concern methods to double-expose an integrated circuit and apparatus for holding masks. U.S. Pat. No. 5,989,761 to Kawakubo et al teaches a method to expose photolithographic masks onto a substrate. First and second masks, corresponding to different substrate layers, are used. The first and second masks are exposed with different apparatus having different exposure field sizes. The first mask is exposed on the first apparatus. A perpendicular error and a mean value of rotation are detected for the first exposure. The second mask is rotated based on the detected error of the first mask to compensate and correct the error. U.S. Pat. No. 5,847,813 to Hirayanagi discloses a mask holding apparatus for lithographic exposure masks. The apparatus adds an inner frame to the conventional outer frame to thereby improve support, thermal transfer, and electrical grounding. U.S. Pat. No. 4,924,258 to Tsutsui teaches a mask holding and conveying mechanism. The mask holding mechanism comprises a reference member, an aperture, a spring-biased first member, and a spring-biased second member.
- A principal object of the present invention is to provide an effective optical lithographic exposure apparatus and method of use thereof for patterning a photoresist layer in the manufacture of an integrated circuit device.
- A further object of the present invention is to provide an exposure apparatus capable of holding two masks in a fixed relative position for sequential exposure of the mask patterns onto a semiconductor wafer.
- A yet further object of the present invention is to provide an exposure apparatus capable of aligning two masks prior to the sequential exposure of the mask patterns onto a semiconductor wafer to thereby save time.
- Another yet further object of the present invention is to provide an exposure apparatus capable of independently aligning two masks.
- Another further object of the present invention is to provide an effective and very manufacturable method to pattern a photoresist layer wherein the photoresist layer is sequentially exposed to actinic light through two different masks.
- Another yet further object of the present invention is to use a two mask holding apparatus to sequentially expose the photoresist layer through a PSM mask and through a BIM mask to thereby enhance the image of the pattern.
- Another yet further object of the present invention is to expose sequentially the photoresist layer through the first mask and the second mask without a mask change and alignment to thereby save time.
- In accordance with the objects of this invention, a new optical lithographic exposure apparatus is described. The apparatus may comprise step and scan capability. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through either the first mask or the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A means of stepping the mask stage across the semiconductor wafer is provided.
- Also in accordance with the objects of the present invention, a new method to pattern a photoresist layer in the manufacture of an integrated circuit device is achieved. A photoresist layer is deposited overlying a semiconductor substrate. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus having a step and scan capability. The mask stage maintains a fixed relative position between the first mask and the second mask. The first mask and the second mask are aligned. The wafer is indexed to a starting field that becomes the current field. The first mask is scanned to expose the current field. The wafer is then indexed to a next field unexposed by the first mask. The stepping and scanning is repeated until every field on the semiconductor substrate is exposed with the first mask. The wafer is then indexed to the starting field that becomes the current field. The second mask is scanned to expose the current field. The wafer is then indexed to a next field unexposed by the second mask. The stepping and scanning is repeated until every field on the semiconductor substrate is exposed with the second mask. The patterns of the first mask and the second mask are thereby superimposed in every field. The photoresist layer is developed to thereby complete the patterning in the manufacture of the integrated circuit device.
- Also in accordance with the objects of the present invention, a new method to pattern a photoresist layer in the manufacture of an integrated circuit device is achieved. A photoresist layer is deposited overlying a semiconductor substrate. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus having a step and scan capability. The mask stage maintains a fixed relative position between the first mask and the second mask. The first mask and the second mask are aligned. The wafer is indexed to a starting field that becomes the current field. The first mask is scanned to expose the current field. The second mask is scanned to expose the adjacent field. The wafer is stepped to a next field unexposed by the first mask. The stepping and scanning is repeated until every field on the semiconductor substrate is exposed. The wafer is indexed to the starting field. The wafer is then stepped to a next field unexposed by the second mask to become the current field. The second mask is scanned to expose the current field. The wafer is then indexed to the next field unexposed by the first mask to become the current field. The first mask is scanned to expose the current field. The stepping and scanning is repeated until every field on the semiconductor substrate is exposed. The patterns of the first mask and the second mask are thereby superimposed in every field. The photoresist layer is developed to thereby complete the patterning in the manufacture of the integrated circuit device.
- In the accompanying drawings forming a material part of this description, there is shown:
-
FIG. 1 illustrates in simplified form an alternating phase shifting mask (PSM). -
FIG. 2 illustrates in simplified form a binary intensity mask (BIM). -
FIG. 3 illustrates in simplified form a photoresist feature formed by double-exposure using the PSM mask ofFIG. 1 and the BIM mask ofFIG. 2 . -
FIG. 4 illustrates in simplified form the key components of the preferred embodiment of the optical stepper apparatus of the present invention. -
FIGS. 5 and 6 illustrate two configurations of a mask stage for the preferred embodiment apparatus of the present invention. -
FIG. 7 illustrates the optional addition of a viewing microscope with alignment marks to the apparatus of the present invention. -
FIG. 8 illustrates, in flow chart form, a first preferred embodiment of the method of the present invention. -
FIGS. 9 and 10 illustrate a semiconductor wafer processed by the first preferred embodiment of the method of the present invention. -
FIG. 11 illustrates, in flow chart form, a second preferred embodiment of the method of the present invention. -
FIGS. 12 through 14 illustrate a semiconductor wafer processed by the second preferred embodiment of the method of the present invention. - The embodiments disclose an optical lithographic exposure apparatus with a novel mask stage capable of holding and aligning two masks at a time. This apparatus may comprise, for example, an optical stepper or scanner. Further, it is preferred that the exposure apparatus have a step and scan capability. This apparatus is ideally suited for double-exposure processing in the manufacture of an integrated circuit device. In addition, two methods for double exposing using a two-mask step and scan process are described. It should be clear to those experienced in the art that the present invention can be applied and extended without deviating from the scope of the present invention.
- Referring now particularly to
FIG. 4 , a simplified form of the preferred embodiment of the apparatus of the present invention illustrated. The key components of a new optical lithographic exposure apparatus are shown. This apparatus adds the ability to load and align two masks and then expose a semiconductor wafer using each of these reticles without a time consuming mask change and alignment step. Thesemiconductor wafer 274 is supported on awafer stage 276. - An important aspect of the present invention is the
novel mask stage 250. Thismask stage 250 comprises a means of holding afirst mask 262 and asecond mask 260. Eachmask separate fixture mask stage 250. Eachmask wafer 274 and to the other mask. Once aligned, themask stage 250 maintains the fixed relative position between thefirst mask 262 and thesecond mask 262. - The ability to independently hold and align the two
masks masks - A
light source 254 comprises a means of selectively shining actinic light through either thefirst mask 262 or thesecond mask 260. Thelight source 254 may comprise, for example, a laser-based source with a specific light wavelength. In the preferred embodiment, thelight source 254 comprises a wavelength of 193 nanometers. Thelight source 254 may include an optical circuit capable of flashing the actinic light for a specific length of time. - An
imaging lens 270 is capable of focusing the actinic light that passes through either of themasks semiconductor wafer 274. Theimaging lens 270 and themask stage 250 are linked such that the image of the exposed mask will be focused onto a particular field of thewafer 274 during each exposure step. Further, theimaging lens 270 and themask stage 250 can be stepped, or indexed, from field to field across the semiconductor wafer. - The preferred application of the stepper apparatus having a two-
mask stage 250 is the double-exposure process described inFIGS. 1 through 3 . For example, an alternating PSM mask of the type shown inFIG. 1 may be loaded into thefirst mask fixture 258. A binary intensity mask (BIM) of the type shown inFIG. 2 may be loaded into thesecond mask fixture 256. Bothmasks PSM mask 262 and theBIM mask 260 such that the patterns of each mask are superimposed on each field. The novel ability to hold two masks, to maintain a fixed relational position between the two masks, and to align both masks prior to exposure provides a significant flexibility and time savings for the operator. - Referring briefly now to
FIG. 9 , asemiconductor wafer 400 is illustrated. An array offields 404 is shown. The exposure apparatus of the present invention exposessingle fields 404 across the wafer. When fields are completed, the stepper indexes to the next field until the entire wafer is exposed. Each field may comprise several integrated circuit die. The preferred embodiment exposure apparatus comprises a step and scan capability. Step and scan uses an illuminated slot which is scanned over the mask to expose the wafer. While the lens remains stationary, the mask and wafer move in a controlled fashion. The wafer is stepped to a field and then the mask is scanned. In a 4× system, for example, the mask moves 4 times faster than the wafer. - Returning now to
FIG. 4 , note that the scanning direction of the apparatus is shown. In this embodiment, thenovel mask stage 250 is configured such that thefirst mask 262 and thesecond mask 260 are placed side-by-side in the same direction as the scanning direction. Alternatively, the first mask and second mask may be configured across the scanning direction. - Referring now to
FIG. 5 , one such configuration of the mask stage is shown in greater detail. Several important features of the present invention are shown. In this configuration, themask stage 100 is configured such that the fixed relative position between thefirst mask 104 and thesecond mask 108 is consistent with the scanning direction. Further, thefirst mask 104 and thesecond mask 108 are adjacent to each other and in the same plane (coplanar). - Each
wafer fixture mask stage 100 has a set of independent alignment controls. Thefirst fixture 112 may have an ‘x’lateral control 124 and a ‘y’lateral control 120, or both. Similarly, thesecond fixture 116 may have an ‘x’lateral control 132 and a ‘y’lateral control 128, or both. In addition, thefirst fixture 112 and thesecond fixture 116 may haveangular controls masks mask stage 100 maintains alignment. - Referring now to
FIG. 6 , themask stage 100 is shown in a second scanning configuration. In this configuration, themask stage 100 is configured such that the fixed relative position between thefirst mask 104 and thesecond mask 108 is perpendicular with the scanning direction. Again, thefirst mask 104 and thesecond mask 108 are adjacent to each other and in the same plane (coplanar). - Referring now to
FIG. 7 , an optional feature of the present invention is illustrated. Amicroscope viewer 216 provides a complimentary alignment and viewing means for the operator. The operator uses themicroscope view 216 to register the alignment marks 208 and 212 on themasks - The two-mask stage of the present invention may be extended to a multiple mask stage by adding an additional mask fixture and alignment system. In this case, the first mask, second mask, and additional mask would be held in a fixed relative position after alignment to facilitate a sequential exposure of a wafer using each mask.
- Referring now to
FIG. 8 , a first preferred embodiment of a method to pattern a photoresist layer in the manufacture of an integrated circuit device is shown. This method uses the novel two-mask stage of the apparatus of the present invention to improve the double-exposure scenario outlined inFIGS. 1 through 3 . First, a photoresist layer is deposited overlying a semiconductor substrate instep 500. The first mask and the second mask are loaded into the novel two-mask stage instep 504. Note that, in this first embodiment of the double-exposure method, either the consistent (FIG. 5 ) or the perpendicular (FIG. 6 ) mask configuration may be used. The first mask and the second mask are aligned instep 508. - The first mask scan is now performed. First, the wafer is indexed to the starting field to set the current field location in
step 512. Referring toFIG. 9 , the startingfield 406 is the uppermost, left-side field of the wafer. Referring again toFIG. 8 , the first mask is scanned to expose the current field instep 516. The wafer is then stepped to the next field unexposed by the first mask to set a new current field instep 520. The scanning (step 516) and stepping (step 520) are repeated until all the fields on the wafer are exposed. - Referring once again to
FIG. 9 , a top view of thesemiconductor wafer 400 is shown at the end ofstep 520. Everyfield 404 in the wafer has been exposed through the first mask at this point in the method. - Referring once again to
FIG. 8 , the second mask scan is now performed. The wafer is returned to the starting field 406 (inFIG. 9 ) to set the current field instep 524. The second mask is scanned to expose the current field instep 528. The wafer is then stepped to the next field unexposed by the second mask to set a new current field instep 532. The scanning (step 528) and stepping (step 532) are repeated until all the fields on the wafer are exposed. - Referring now to
FIG. 10 , thesemiconductor wafer 400 is shown at the end ofstep 532. Everyfield 404 has now been exposed through the second mask. Now, the pattern of the first mask and the second mask is superimposed on everyfield 404 of thewafer 400. - Referring once again to
FIG. 8 , the photoresist layer is developed to complete the method of patterning instep 536. - Referring now to
FIG. 11 , a second preferred embodiment of a method to pattern a photoresist layer in the manufacture of an integrated circuit device is shown. This method again uses the novel two-mask stage of the apparatus of the present invention to improve the double-exposure scenario outlined inFIGS. 1 through 3 . First, a photoresist layer is deposited overlying a semiconductor substrate instep 600. The first mask and the second mask are loaded into the novel two-mask stage instep 604. Note that, in this second embodiment of the double-exposure method, only the consistent (FIG. 5 ) mask configuration may be used. The first mask and the second mask are aligned instep 608. - The wafer is indexed to the starting field to set the current field in
step 612. Referring toFIG. 12 , the startingfield 306 is the uppermost, left-side field of the wafer. Referring again toFIG. 11 , the first mask is scanned to expose the current field instep 616. Next, the second mask is scanned to expose the adjacent field instep 620. Note that it is not necessary to step the mask stage to do this exposure since the second mask is held adjacent to the first mask and is already positioned to expose the field adjacent to the field exposed through the first mask. The wafer is now stepped to the next field unexposed by the first mask to set a new current field instep 624. The scanning (step 616 and step 620) and stepping (step 624) are repeated until all the fields on the wafer are exposed. - Referring once again to
FIG. 12 , a top view of thesemiconductor wafer 300 is shown at the end ofstep 624. Every field on the wafer has been exposed through either thefirst mask 304 or thesecond mask 308 during this first pass scan. - Referring once again to
FIG. 11 , the second pass scan is now performed. The wafer is returned to the starting field 306 (inFIG. 12 ) to set the current field instep 628. The wafer is stepped to the next field unexposed by the second mask to set a new current field. Referring now toFIG. 13 , the next field unexposed by thesecond mask 309 is shown. The second mask is scanned to expose the current field instep 636. The wafer is then stepped to the next field unexposed by the first mask to set a new current field instep 640. The first mask is now scanned to exposed the current field instep 644. The scanning (step 636 and step 644) and stepping (step 640) are repeated until all the fields on the wafer are exposed. - Referring again to
FIG. 13 , thesemiconductor wafer 300 is shown at the end ofstep 644. Now, the pattern of the first mask and the second mask is superimposed on everyfield wafer 300. Note that only single mask scans are required at the beginning and endingfields 312 of each row. These single mask exposure fields are called fill-infields 312. - Referring now to
FIG. 14 , the fill-in fields may be completed using a partial scan wherein the stepper is programmed to single expose the beginning and endingfields 312 with the missing mask. - Referring once again to
FIG. 11 , the photoresist layer is developed to complete the method of patterning instep 648. - The optical lithographic exposure apparatus described provides a significant advantage over the prior art. The novel two-mask stage enables a double-exposure process without a time consuming mask change and alignment. This facilitates the use of alternating phase shifting mask (PSM) technology to produce very fine line width features in an integrated circuit manufacturing process. The methods of patterning a photoresist layer using the two-mask stage provide a very manufacturable approach to phase shifting mask lithography.
- While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention.
Claims (33)
1-27. (Canceled).
28. A method of arranging masks, comprising:
holding a first mask and a second mask; and
maintaining a fixed relative position between the first mask and the second mask.
29. The method as claimed in claim 28 , wherein the first mask and the second mask are placed side by side.
30. The method as claimed in claim 28 , wherein the first mask and the second mask are placed side by side in a same direction as a scanning direction.
31. The method as claimed in claim 28 , wherein the first mask and the second mask are configured across a scanning direction.
32. The method as claimed in claim 28 , wherein the first mask and the second mask are held in a separate fixture of a mask stage.
33. The method as claimed in claim 28 , wherein the first mask comprises a phase-shifting mask.
34. The method as claimed in claim 28 , wherein the second mask comprises a binary intensity mask.
35. A method for patterning a photoresist layer, comprising:
depositing a photoresist layer overlying a wafer;
exposing the photoresist layer with a plurality of masks held in a mask stage, wherein the mask stage maintains a fixed relative position between each two adjacent masks; and
developing the photoresist layer.
36. The method as claimed in claim 35 , wherein the steps of exposing the photoresist layer with the plurality of masks held in a mask stage comprise:
loading the mask stage holding the plurality of masks;
aligning the plurality of masks; and
scanning the plurality of masks and stepping the wafer to expose the photoresist layer with each of the plurality of masks respectively.
37. The method as claimed in claim 36 , wherein the plurality of masks are aligned prior to any exposing and stepping.
38. The method as claimed in claim 35 , wherein the plurality of masks are placed side by side in a same direction as a scanning direction.
39. The method as claimed in claim 35 , wherein the plurality of masks are placed side by side and configured across a scanning direction.
40. The method as claimed in claim 35 , wherein the plurality of masks are held in a separate fixture of a mask stage.
41. The method as claimed in claim 35 , wherein the first mask and the second mask are held in a separate fixture of a mask stage.
42. A method for patterning a photoresist layer, comprising:
depositing a photoresist layer overlying a wafer comprising a plurality of fields;
exposing the photoresist layer with a first mask and a second mask both held in a mask stage, wherein the mask stage maintains a fixed relative position between the first mask and the second mask; and
developing the photoresist layer.
43. The method as claimed in claim 42 , wherein the steps of exposing the photoresist layer with the first mask and the second mask held in a mask stage comprise:
loading the mask stage holding the first mask and the second mask;
aligning the first mask and the second mask; and
scanning the first mask and stepping the wafer to expose each of fields; and
scanning the second mask and stepping the wafer to expose each of fields.
44. The method as claimed in claim 43 , wherein the first mask and the second mask are placed side by side in a same direction as a scanning direction.
45. The method as claimed in claim 43 , wherein the first mask and the second mask are placed side by side and configured across a scanning direction.
46. The method as claimed in claim 43 , wherein first mask comprises a phase-shifting mask and wherein the second mask comprises a binary intensity mask.
47. The method as claimed in claim 43 , wherein the first mask and the second mask are held in a separate fixture of the mask stage.
48. The method as claimed in claim 42 , wherein the steps of exposing the photoresist layer with the first mask and the second mask held in a mask stage comprise:
loading the mask stage holding the first mask and the second mask;
aligning the first mask and the second mask; and
scanning the first mask to expose a first field;
scanning the second mask to expose a second field adjacent to the first field;
stepping the wafer and repeating the scanning steps until each of fields is exposed with the first mask and the second mask.
49. The method as claimed in claim 48 , wherein the first mask and the second mask are placed side by side in a same direction as a scanning direction.
50. The method as claimed in claim 48 , wherein the first mask and the second mask are placed side by side and configured across a scanning direction.
51. The method as claimed in claim 48 , wherein first mask comprises a phase-shifting mask and wherein the second mask comprises a binary intensity mask.
52. The method as claimed in claim 48 , wherein the first mask and the second mask are held in a separate fixture of the mask stage.
53. A method for fabricating an integrated circuit device, comprising:
depositing a photoresist layer overlying a substrate;
exposing the photoresist layer with a first mask and a second mask both held in a mask stage, wherein the mask stage maintains a fixed relative position between the first mask and the second mask;
developing the photoresist layer to form a photoresist pattern; and
patterning the substrate with the photoresist pattern.
54. The method as claimed in claim 53 , wherein the first mask and the second mask are placed side by side.
55. The method as claimed in claim 53 , wherein the first mask and the second mask are placed side by side in a same direction as a scanning direction.
56. The method as claimed in claim 53 , wherein the first mask and the second mask are configured across a scanning direction.
57. The method as claimed in claim 53 , wherein the first mask and the second mask are held in a separate fixture of a mask stage.
58. The method as claimed in claim 53 , wherein the first mask comprises a phase-shifting mask.
59. The method as claimed in claim 53 , wherein the second mask comprises a binary intensity mask.
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EP1744216A3 (en) * | 2005-07-13 | 2010-01-27 | ASML Netherlands B.V. | Stage apparatus, lithographic apparatus and device manufacturing method |
EP1744216A2 (en) * | 2005-07-13 | 2007-01-17 | ASML Netherlands B.V. | Stage apparatus, lithographic apparatus and device manufacturing method |
US20070075315A1 (en) * | 2005-10-04 | 2007-04-05 | Asml Netherlands B.V. | System and method for compensating for thermal expansion of lithography apparatus or substrate |
US7391503B2 (en) * | 2005-10-04 | 2008-06-24 | Asml Netherlands B.V. | System and method for compensating for thermal expansion of lithography apparatus or substrate |
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WO2007120602A3 (en) * | 2006-04-14 | 2008-07-10 | Altera Corp | Double exposure photolithographic process |
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US9195069B2 (en) | 2006-04-17 | 2015-11-24 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
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CN103187246A (en) * | 2011-12-31 | 2013-07-03 | 中国科学院微电子研究所 | Manufacturing method for hybrid lines |
CN104698762A (en) * | 2013-12-06 | 2015-06-10 | 上海华虹宏力半导体制造有限公司 | Method for improving working efficiency of mask aligner |
CN105093836A (en) * | 2014-05-06 | 2015-11-25 | 上海微电子装备有限公司 | EUV (extreme UV) lithographic apparatus and exposure method therefor |
Also Published As
Publication number | Publication date |
---|---|
US20030142284A1 (en) | 2003-07-31 |
US6934008B2 (en) | 2005-08-23 |
US20050012914A1 (en) | 2005-01-20 |
US6777143B2 (en) | 2004-08-17 |
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Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TAIW Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LIN, BURN J.;REEL/FRAME:015898/0340 Effective date: 20010925 |
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STCB | Information on status: application discontinuation |
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