US20050016686A1 - Apparatus and method for fabricating semiconductor devices - Google Patents

Apparatus and method for fabricating semiconductor devices Download PDF

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Publication number
US20050016686A1
US20050016686A1 US10/921,054 US92105404A US2005016686A1 US 20050016686 A1 US20050016686 A1 US 20050016686A1 US 92105404 A US92105404 A US 92105404A US 2005016686 A1 US2005016686 A1 US 2005016686A1
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Prior art keywords
wafer
edge
pattern
semiconductor devices
etched
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US10/921,054
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Chang Gyu Kim
Wan Shick Kim
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DongbuAnam Semiconductor Inc
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DongbuAnam Semiconductor Inc
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Priority to US10/921,054 priority Critical patent/US20050016686A1/en
Publication of US20050016686A1 publication Critical patent/US20050016686A1/en
Assigned to DONGBUANAM SEMICONDUCTOR INC. reassignment DONGBUANAM SEMICONDUCTOR INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: DONGBU ELECTRONICS CO., LTD.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • the present invention relates to an apparatus and method for fabricating semiconductor devices, and more particularly for forming a protective step which can prevent an edge of a semiconductor wafer from being over-polished during a chemical-mechanical polishing (CMP) process.
  • CMP chemical-mechanical polishing
  • a CMP process has been applied as a planarization process for insulation layers as well as a damascene process for metallic layers.
  • the CMP process is employed in polishing a semiconductor wafer surface by using the friction between slurry and a pad, in which various consumables, such as slurry, a pad, a backing film, a diamond conditioner, etc., are used.
  • the polishing property of this process is dependant upon pressure distribution between the pad and the wafer while the wafer is polished in close contact with the pad.
  • the wafer undergoes deposition of various thin layers, and then a predetermined pattern is formed on the wafer by photolithography and etching processes.
  • the photoresist applied on the wafer in particular on the edge of the wafer, is subjected to rinsing.
  • various thin layers are deposited on the wafer 10 , and then the resulting wafer is subjected to photolithography as well as etching processes so as to form a predetermined pattern thereon.
  • a predetermined insulation layer is deposited on the wafer 10 , an anti-reflection layer and a photoresist layer are in turn applied on the insulation layer, an edge 12 of the wafer is rinsed, only photoresist on the edge 12 is removed, the remnant photoresist is photosensed in the presence of a mask, and a predetermined pattern 11 is formed by a reactive ion etching (RIE) process.
  • RIE reactive ion etching
  • the wafer is wholly exposed to reactive gas, thereby a pattern area free from photoresist is etched together with the edge 12 of the wafer from which photoresist was rinsed and removed. Therefore, a height difference is formed in proportion to the etched amount.
  • the edge 12 from which a part of photoresist was rinsed and removed is over-polished, which incurs damage of the wafer 10 as shown in FIG. 1B .
  • the edge of the wafer may be free from damage.
  • the wafer may not only be contaminated by the non-rinsed photoresist during transporting of the wafer.
  • the edge thereof may be formed with particles.
  • an object of the present invention is to provide an apparatus for fabricating semiconductor devices, in which during an etching process an edge of a semiconductor wafer is constrained from being etched by using a clamp.
  • Another object of the present invention is to provide an apparatus for fabricating semiconductor devices, in which during an etching process an edge of a semiconductor wafer is constrained from being etched by using a shadow ring.
  • Another additional object of the present invention is to provide a method for fabricating semiconductor devices, in which during a CMP process after formation of a protective step on an edge of a semiconductor wafer, over-polishing, which results in a height difference between the edge and a pattern of the wafer, is prevented.
  • an apparatus for fabricating semiconductor devices comprising: a wafer chuck for holding a semiconductor wafer on which various thin layers has been deposited; a processing chamber for injecting etching gas toward the wafer to form a predetermined pattern; and a clamp, attached to an edge of the wafer being held by the wafer chuck, for preventing the edge from being etched.
  • an apparatus for fabricating semiconductor devices comprising: a wafer chuck for holding a semiconductor wafer on which various thin layers has been deposited; a processing chamber for injecting etching gas toward the wafer to form a predetermined pattern; and a shadow ring, provided in the chamber upwardly spaced apart from the wafer being held by the wafer chuck, for preventing the edge from being etched.
  • a method for fabricating semiconductor devices using a semiconductor wafer formed with various thin layers thereon comprising the steps of: covering the thin layers with photoresist and then partially removing the photoresist from an edge of the wafer; etching the wafer except for the edge which is free from the photoresist with etching gas, so as to form a predetermined pattern; forming a protective step on the edge at the same time as the pattern is being formed; and performing planarization of the wafer formed with the pattern and the protective step.
  • FIGS. 1A and 1B illustrate the procedures for forming a semiconductor device according to the prior art
  • FIG. 2 is a cross-sectional view of a processing chamber for ion etching in an apparatus for fabricating a semiconductor device according to one preferred embodiment of the present invention
  • FIG. 3 is a cross-sectional view of a processing chamber for ion etching in an apparatus for fabricating a semiconductor device according to another preferred embodiment of the present invention.
  • FIGS. 4A and 4B illustrate the procedures for forming a semiconductor device according to the present invention.
  • a processing chamber 100 used in an ion etching process is housed with a wafer chuck 101 for holding a wafer 102 , a gas injection head 103 for injecting gas toward the wafer 102 , and a clamp 104 for grasping the wafer 102 and preventing an edge of the wafer from being etched.
  • the wafer 102 is subjected to deposition of various thin layers thereon, and then patterned in a predetermined pattern by a photolithography process and an etching process.
  • the edge of the wafer 102 is rinsed, and only then is the photoresist on the edge removed.
  • the edge of the wafer 102 is grasped by the clamp 104 , so that it is not etched during the etching process. As a result, the edge of the wafer is formed with a protective step.
  • a surface of the wafer 102 is worked by slurry supplied from the exterior as well as friction applied from a pad, so that the wafer 102 has a different level of polishing resulting from a layout of the device, a pattern density, a pattern thickness and so forth.
  • the edge of the wafer may be formed at a different height than the rest of the wafer.
  • this different height can be prevented by provision of the protective step on the edge.
  • the protective step around the edge of the wafer makes it possible to obtain planarization of the insulation layer deposited on the pattern of the wafer 102 for the CMP process and to prevent the edge of the wafer from being over-polished, and thus reliability and productivity of the semiconductor device can be increased.
  • a processing chamber 100 is housed with a wafer chuck 101 for holding a wafer 102 , a gas injection head 103 for injecting gas toward the wafer 102 , and a shadow ring 105 for preventing an edge of the wafer 102 from being etched.
  • the wafer 102 is subjected to deposition of various thin layers thereon, and then patterned in a predetermined pattern by a photolithography process and an etching process.
  • the edge of the wafer 102 is rinsed, and only then is the photoresist on the edge removed.
  • the edge of the wafer 102 is prevented from being etched during the etching process by the shadow ring 105 , so that it is formed with a protective step.
  • a surface of the wafer 102 is worked in cooperation with slurry supplied from the exterior as well as friction applied from a pad, so that the wafer 102 has a different level of polishing resulting from a layout of the device, a pattern density, a pattern thickness and so forth.
  • the edge of the wafer may be formed at a different height than the rest of the wafer.
  • this different height can be prevented by provision of the protective step on the edge.
  • the protective step around the edge of the wafer makes it possible to obtain planarization of the insulation layer deposited on the pattern of the wafer 102 for the CMP process and to prevent the edge of the wafer from being over-polished, and thus reliability and productivity of the semiconductor device can be increased.
  • various thin layers is deposited on a wafer 200 , and then a predetermined pattern 210 is formed with the resulting wafer by using a photolithography process and an etching process.
  • the layer deposited on the wafer 200 is an insulation layer such as an oxide layer or a silicon nitride layer, or a conductive layer such as a titan layer, a titan nitride layer, a tungsten layer, an aluminum layer or a copper layer.
  • the top surface of the wafer with the deposited layer is covered with photoresist so as to form the pattern 210 .
  • photoresist Only the photoresist applied on an edge of the wafer is removed through rinsing so as to prevent the remnant photoresist contamination and particle generation.
  • the rinsed edge has a width of less than 3 millimeters.
  • the edge free from the photoresist is not exposed to etching gas due to a clamp 104 provided in the processing chamber. Therefore, the edge protected from the etching gas by means of the clamp 104 is provided with a protective step 220 after completion of the etching process.
  • This protective step 220 gets rid of the height difference between the pattern 210 and the edge resulting from the CMP process which follows the etching process, so that it can prevent the pattern 210 and the edge from being over-polished.
  • the shadow ring 105 is installed in the processing chamber 100 upwardly spaced apart from the wafer chuck 101 , so that the edge of the wafer is protected from etching conditions during the etching process, thus forming the protective step 220 .
  • this configuration can also obtain the same effects as the previous configuration.
  • FIG. 4 shows the wafer 200 , which is formed with the protective step 220 and the pattern 210 by the CMP process.
  • This protective step 220 allows the pattern 210 and the edge to avoid being over-polished resulting from the height difference between the pattern 210 and the edge during the CMP process.
  • the edge is provided with the protective step through employment of the clamp or the shadow ring. Therefore, during the CMP process following the pattern formation process, the edge can be prevented from being over-polished, and thus reliability as well as productivity of the semiconductor devices can be increased.

Abstract

Disclosed is apparatus and method for fabricating semiconductor devices, in particular comprising a wafer chuck for holding a semiconductor wafer on which a predetermined thin layer is deposited; a processing chamber for injecting etching gas toward the wafer to form a predetermined pattern; and a clamp or a shadow ring provided on an edge of the wafer being held by the wafer chuck and preventing the edge from being etched, and thereby forming a protective step around the edge. Therefore, during a subsequent CMP process, the pattern adjacent to the edge of the wafer can be prevented from being over-polished, and reliability as well as productivity of the semiconductor devices can be improved.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the invention
  • The present invention relates to an apparatus and method for fabricating semiconductor devices, and more particularly for forming a protective step which can prevent an edge of a semiconductor wafer from being over-polished during a chemical-mechanical polishing (CMP) process.
  • 2. Description of the Prior Art
  • In general, a CMP process has been applied as a planarization process for insulation layers as well as a damascene process for metallic layers.
  • The CMP process is employed in polishing a semiconductor wafer surface by using the friction between slurry and a pad, in which various consumables, such as slurry, a pad, a backing film, a diamond conditioner, etc., are used. The polishing property of this process is dependant upon pressure distribution between the pad and the wafer while the wafer is polished in close contact with the pad.
  • When the amount of polishing on one surface of a blanket wafer is uniformly maintained, pressure on the other surface of the wafer may be controlled. When the amount of polishing on an edge of the wafer is controlled, pressure on a retainer ring on the circumference of the CMP equipment may be controlled. However, there is a problem in that it is difficult to control the level of polishing resulting from a chip layout, a pattern density, a pattern height and so forth.
  • Before such a CMP process is performed, the wafer undergoes deposition of various thin layers, and then a predetermined pattern is formed on the wafer by photolithography and etching processes.
  • In the photolithography process, to inhibit photoresist contamination as well as particle generation, the photoresist applied on the wafer, in particular on the edge of the wafer, is subjected to rinsing.
  • The photolithography and etching processes will be specifically described below with reference to attached drawings.
  • Referring to FIG. 1A, to form a pattern prior to the CMP process, various thin layers are deposited on the wafer 10, and then the resulting wafer is subjected to photolithography as well as etching processes so as to form a predetermined pattern thereon.
  • Specifically, in the photolithography process, a predetermined insulation layer is deposited on the wafer 10, an anti-reflection layer and a photoresist layer are in turn applied on the insulation layer, an edge 12 of the wafer is rinsed, only photoresist on the edge 12 is removed, the remnant photoresist is photosensed in the presence of a mask, and a predetermined pattern 11 is formed by a reactive ion etching (RIE) process.
  • In general, in the RIE process, the wafer is wholly exposed to reactive gas, thereby a pattern area free from photoresist is etched together with the edge 12 of the wafer from which photoresist was rinsed and removed. Therefore, a height difference is formed in proportion to the etched amount.
  • In the CMP process after the thin layers are deposited on the pattern 11 which is generated by the RIE process, the edge 12 from which a part of photoresist was rinsed and removed is over-polished, which incurs damage of the wafer 10 as shown in FIG. 1B.
  • To avoid this problem, a dummy chip has been used, but it acts as a factor which decreases the yield of semiconductor devices. In addition, when the photoresist is not rinsed, the edge of the wafer may be free from damage. However, the wafer may not only be contaminated by the non-rinsed photoresist during transporting of the wafer. The edge thereof may be formed with particles.
    • SUMMARY OF THE INVENTION
  • Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide an apparatus for fabricating semiconductor devices, in which during an etching process an edge of a semiconductor wafer is constrained from being etched by using a clamp.
  • Another object of the present invention is to provide an apparatus for fabricating semiconductor devices, in which during an etching process an edge of a semiconductor wafer is constrained from being etched by using a shadow ring.
  • Another additional object of the present invention is to provide a method for fabricating semiconductor devices, in which during a CMP process after formation of a protective step on an edge of a semiconductor wafer, over-polishing, which results in a height difference between the edge and a pattern of the wafer, is prevented.
  • In order to accomplish these objects, according to one embodiment of the present invention, there is provided an apparatus for fabricating semiconductor devices, comprising: a wafer chuck for holding a semiconductor wafer on which various thin layers has been deposited; a processing chamber for injecting etching gas toward the wafer to form a predetermined pattern; and a clamp, attached to an edge of the wafer being held by the wafer chuck, for preventing the edge from being etched.
  • According to another embodiment of the present invention, there is provided an apparatus for fabricating semiconductor devices, comprising: a wafer chuck for holding a semiconductor wafer on which various thin layers has been deposited; a processing chamber for injecting etching gas toward the wafer to form a predetermined pattern; and a shadow ring, provided in the chamber upwardly spaced apart from the wafer being held by the wafer chuck, for preventing the edge from being etched.
  • According to another additional embodiment of the present invention, there is provided a method for fabricating semiconductor devices using a semiconductor wafer formed with various thin layers thereon, comprising the steps of: covering the thin layers with photoresist and then partially removing the photoresist from an edge of the wafer; etching the wafer except for the edge which is free from the photoresist with etching gas, so as to form a predetermined pattern; forming a protective step on the edge at the same time as the pattern is being formed; and performing planarization of the wafer formed with the pattern and the protective step.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIGS. 1A and 1B illustrate the procedures for forming a semiconductor device according to the prior art;
  • FIG. 2 is a cross-sectional view of a processing chamber for ion etching in an apparatus for fabricating a semiconductor device according to one preferred embodiment of the present invention;
  • FIG. 3 is a cross-sectional view of a processing chamber for ion etching in an apparatus for fabricating a semiconductor device according to another preferred embodiment of the present invention; and
  • FIGS. 4A and 4B illustrate the procedures for forming a semiconductor device according to the present invention.
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. In the following description and drawings, the same reference numerals are used to designate the same or similar components, and so repetition of the description on the same or similar components will be omitted.
  • Referring to FIG. 2, in an apparatus for fabricating semiconductor devices, a processing chamber 100 used in an ion etching process is housed with a wafer chuck 101 for holding a wafer 102, a gas injection head 103 for injecting gas toward the wafer 102, and a clamp 104 for grasping the wafer 102 and preventing an edge of the wafer from being etched.
  • The wafer 102 is subjected to deposition of various thin layers thereon, and then patterned in a predetermined pattern by a photolithography process and an etching process.
  • In the photolithography process, to restrict photoresist contamination and particle generation, the edge of the wafer 102 is rinsed, and only then is the photoresist on the edge removed.
  • The edge of the wafer 102 is grasped by the clamp 104, so that it is not etched during the etching process. As a result, the edge of the wafer is formed with a protective step.
  • In the CMP process following the etching process, a surface of the wafer 102 is worked by slurry supplied from the exterior as well as friction applied from a pad, so that the wafer 102 has a different level of polishing resulting from a layout of the device, a pattern density, a pattern thickness and so forth.
  • According to previous process in the art, during the CMP process after depositing various thin layers and forming the pattern, the edge of the wafer may be formed at a different height than the rest of the wafer. However, according to the process of the present invention, this different height can be prevented by provision of the protective step on the edge.
  • Therefore, the protective step around the edge of the wafer makes it possible to obtain planarization of the insulation layer deposited on the pattern of the wafer 102 for the CMP process and to prevent the edge of the wafer from being over-polished, and thus reliability and productivity of the semiconductor device can be increased.
  • Referring to FIG. 3, a processing chamber 100 according to another embodiment of the present invention is housed with a wafer chuck 101 for holding a wafer 102, a gas injection head 103 for injecting gas toward the wafer 102, and a shadow ring 105 for preventing an edge of the wafer 102 from being etched.
  • The wafer 102 is subjected to deposition of various thin layers thereon, and then patterned in a predetermined pattern by a photolithography process and an etching process.
  • In the photolithography process, to restrict photoresist contamination and particle generation, the edge of the wafer 102 is rinsed, and only then is the photoresist on the edge removed.
  • The edge of the wafer 102 is prevented from being etched during the etching process by the shadow ring 105, so that it is formed with a protective step.
  • In the CMP process following the etching process, a surface of the wafer 102 is worked in cooperation with slurry supplied from the exterior as well as friction applied from a pad, so that the wafer 102 has a different level of polishing resulting from a layout of the device, a pattern density, a pattern thickness and so forth.
  • According to previous process in the art, during the CMP process after depositing various thin layers and forming the pattern, the edge of the wafer may be formed at a different height than the rest of the wafer. However, according to the process of the present invention, this different height can be prevented by provision of the protective step on the edge.
  • Therefore, the protective step around the edge of the wafer makes it possible to obtain planarization of the insulation layer deposited on the pattern of the wafer 102 for the CMP process and to prevent the edge of the wafer from being over-polished, and thus reliability and productivity of the semiconductor device can be increased.
  • The procedures for processing the semiconductor device using the processing chamber as above-mentioned will be described with reference to FIGS. 4A and 4B.
  • Referring to FIG. 4A, various thin layers is deposited on a wafer 200, and then a predetermined pattern 210 is formed with the resulting wafer by using a photolithography process and an etching process. The layer deposited on the wafer 200 is an insulation layer such as an oxide layer or a silicon nitride layer, or a conductive layer such as a titan layer, a titan nitride layer, a tungsten layer, an aluminum layer or a copper layer.
  • In the photolithography for patterning the wafer, the top surface of the wafer with the deposited layer is covered with photoresist so as to form the pattern 210. Only the photoresist applied on an edge of the wafer is removed through rinsing so as to prevent the remnant photoresist contamination and particle generation. Here, the rinsed edge has a width of less than 3 millimeters.
  • The edge free from the photoresist is not exposed to etching gas due to a clamp 104 provided in the processing chamber. Therefore, the edge protected from the etching gas by means of the clamp 104 is provided with a protective step 220 after completion of the etching process.
  • This protective step 220 gets rid of the height difference between the pattern 210 and the edge resulting from the CMP process which follows the etching process, so that it can prevent the pattern 210 and the edge from being over-polished.
  • Up to now, one preferred embodiment of the present invention has been described, for example, with respect to formation of the protective step using the clamp 104. Similarly, the shadow ring 105 is installed in the processing chamber 100 upwardly spaced apart from the wafer chuck 101, so that the edge of the wafer is protected from etching conditions during the etching process, thus forming the protective step 220. With respect to formation of the protective step 220, this configuration can also obtain the same effects as the previous configuration.
  • FIG. 4 shows the wafer 200, which is formed with the protective step 220 and the pattern 210 by the CMP process. This protective step 220 allows the pattern 210 and the edge to avoid being over-polished resulting from the height difference between the pattern 210 and the edge during the CMP process.
  • As seen from the above, in the pattern formation process prior to the planarization process for fabricating semiconductor devices, to restrain the edge of the wafer from being etched during the etching process, the edge is provided with the protective step through employment of the clamp or the shadow ring. Therefore, during the CMP process following the pattern formation process, the edge can be prevented from being over-polished, and thus reliability as well as productivity of the semiconductor devices can be increased.
  • Although a preferred embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims (4)

1. An apparatus for fabricating semiconductor devices, comprising:
a wafer chuck for holding a semiconductor wafer on which various thin layers has been deposited;
a processing chamber for injecting etching gas toward the wafer to form a predetermined pattern; and
a clamp, attached to an edge of the wafer being held by the wafer chuck, for preventing the edge from being etched.
2. An apparatus as claimed in claim 1, wherein the clamp forms a protective step on the edge by constraining the edge from being etched.
3. An apparatus for fabricating semiconductor devices comprising:
a wafer chuck for holding a semiconductor wafer on which various thin layers has been deposited;
a processing chamber for injecting etching gas toward the wafer to form a predetermined pattern; and
a shadow ring, provided in the chamber upwardly spaced apart from the wafer being held by the wafer chuck, for preventing the edge from being etched.
4. An apparatus as claimed in claim 3, wherein the shadow ring forms a protective step on the edge by constraining the edge from being etched.
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TW200409229A (en) 2004-06-01
CN1260780C (en) 2006-06-21
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CN1427455A (en) 2003-07-02
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