US20040245587A1 - Micromachine and production method thereof - Google Patents
Micromachine and production method thereof Download PDFInfo
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- US20040245587A1 US20040245587A1 US10/492,397 US49239704A US2004245587A1 US 20040245587 A1 US20040245587 A1 US 20040245587A1 US 49239704 A US49239704 A US 49239704A US 2004245587 A1 US2004245587 A1 US 2004245587A1
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- vibrator
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000009413 insulation Methods 0.000 claims abstract description 68
- 239000011229 interlayer Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
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- 238000000034 method Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/462—Microelectro-mechanical filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane
Definitions
- the present invention relates to a micromachine and a method of manufacturing the same, particularly to a micromachine including a vibrator electrode crossing over an output electrode, with a space portion therebetween, and a method of manufacturing the same.
- a micro-vibrator 100 includes a vibrator electrode 103 disposed over an output electrode 102 a provided on a substrate 101 , with a space portion A therebetween.
- the vibrator electrode 103 has one end portion connected to an input electrode 102 b , which is constituted of the same conductive layer as the output electrode 102 a .
- a beam (vibrating portion) 103 a of the vibrator electrode 103 provided over the output electrode 102 a with the space portion A therebetween is vibrated at a natural vibration frequency, whereby the capacitance of a capacitor constituted of the space portion A between the output electrode 102 a and the beam (vibrating portion) 103 a is varied, and the variation in capacitance is outputted from the output electrode 102 a .
- a high-frequency filter composed of the micro-vibrator 100 having such a configuration can realize a higher Q value, as compared with high-frequency filters utilizing surface elastic wave (SAW) or thin film elastic wave (FBAR).
- the micro-vibrator as above-mentioned is manufactured as follows. First, as shown in FIG. 9A, an output electrode 102 a , an input electrode 102 b , and a support electrode 102 c which are formed of polysilicon are provided on a substrate 101 whose surface has been covered with an insulation film. These electrodes 102 a to 102 c are so arranged that the input electrode 102 b and the support electrode 102 c are disposed on the opposite sides of the output electrode 102 a . Next, a sacrificing layer 105 formed of silicon oxide is provided on the substrate 101 in the state of covering the electrodes 102 a to 102 c.
- the sacrificing layer 105 is provided with connection holes 105 b and 105 c reaching the input electrode 102 b and the support electrode 102 c , respectively. Thereafter, a polysilicon layer 106 is provided on the upper side of the sacrificing layer 105 , inclusive of the inside of the connection holes 105 b and 105 c.
- the polysilicon layer 106 is patterningly etched, to form a belt-like vibrator electrode 103 extending over the output electrode 102 a .
- the polysilicon layer 106 is patterningly etched so that the connection holes 105 b and 105 c are entirely covered.
- the sacrificing layer 105 is selectively removed, to form the space portion A between the output electrode 102 a and the vibrator electrode 103 , thereby completing the micro-vibrator 100 , as shown in FIGS. 9A to 9 C.
- FIG. 10 is a diagram showing the relationship between the length (beam length) L of the beam (vibrating portion) 103 a of the micro-vibrator 100 configured as above and the natural vibration frequency.
- the theoretical natural vibration frequency (Theory) based on the following formula (1) is proportional to (1/L 2 ). Therefore, in order to achieve a higher frequency, it is necessary to reduce the beam length L.
- f R 0.162 ⁇ ⁇ h L 2 ⁇ E ⁇ ⁇ K ⁇ ( 1 )
- h is film thickness
- E Young's modulus
- K is electromagnetic coupling factor
- ⁇ is film density
- a micromachine including a vibrator electrode which promises a further advance in achieving a higher frequency through miniaturization of beam length, and a method of manufacturing the same.
- a micromachine according to the present invention includes a vibrator electrode, and is configured as follows.
- the micromachine according to the present invention has a structure in which an inter-layer insulation film covering an output electrode on a substrate is provided with a hole pattern reaching the output electrode.
- a belt-like vibrator electrode is provided so as to cross the upper side of the hole pattern which functions as a space portion.
- the vibrator electrode is so disposed as to cross the upper side of the hole pattern formed in the inter-layer insulation film as the space portion. Therefore, the vibrator electrode portion crossing over the hole pattern constitutes a beam (vibrating portion) of the vibrator electrode. Accordingly, the length of the beam (vibrating portion) is set by the size of the hole pattern, without dependence on the width of the output electrode, and a vibrator electrode having a beam (vibrating portion) shorter than the width of the output electrode is obtained.
- the present invention resides also in a method of manufacturing a micromachine configured as above, the method being carried out in the following procedure.
- the surface of the output electrode in a bottom portion of the hole pattern is covered with a sacrificing layer, and a belt-like vibrator electrode crossing over the hole pattern in the state of exposing a part of the hole pattern is patternedly formed on the sacrificing layer and the inter-layer insulation film.
- the sacrificing layer in the hole pattern is selectively removed, to thereby provide a space portion between the output electrode and the vibrator electrode.
- FIGS. 1A to 1 H are sectional step diagrams showing a manufacturing method according to a first embodiment.
- FIG. 2 is a plan view corresponding to FIG. 1F.
- FIG. 3 is a plan view corresponding to FIG. 1H.
- FIG. 4 is a plan view showing a modified example of the first embodiment.
- FIGS. 5A to 5 C are sectional step diagrams showing a manufacturing method according to a second embodiment.
- FIG. 6 is a plan view corresponding to FIG. 5A.
- FIG. 7 is a plan view corresponding to FIG. 5C.
- FIG. 8 shows the configuration of a micromachine (micro-vibrator) according to the prior art.
- FIGS. 9A to 9 C are sectional step diagrams showing a manufacturing method according to the prior art.
- FIG. 10 is a graph for illustrating the problems involved in a micromachine according to the prior art.
- FIGS. 1A to 1 H are sectional step diagrams showing a manufacturing method according to a first embodiment
- FIGS. 2 and 3 are plan views for illustrating the manufacturing method according to the first embodiment.
- FIGS. 1A to 1 H correspond to section A-A in the plan views in FIGS. 2 and 3.
- a substrate 4 including a semiconductor substrate 1 , formed of single-crystalline silicon or the like, covered thereon with an insulation layer 3 is prepared.
- the outermost surface of the insulation layer 3 is formed of a material resistant to the etching in the etching-away of a sacrificing layer (for example, silicon oxide) which is conducted subsequently. Therefore, for example, a silicon oxide film 3 a for alleviating stresses between the insulation layer 3 and the semiconductor substrate 1 and a silicon nitride film 3 b having the above-mentioned etching resistance are laminated in this order, to form the insulation layer 3 .
- an output electrode 7 formed by patterning a first conductive layer is provided on the substrate 4 .
- the first conductive layer constituting the output electrode 7 is composed, for example, of a silicon layer formed of phosphorus (P)-containing polysilicon or the like.
- the upper side of the substrate 4 is covered with a first insulation film 9 , in the condition where the surface of the output electrode 7 is exposed.
- the first insulation film 9 is formed on the substrate 4 in a film thickness larger than the film thickness of the output electrode 7 so that the output electrode 7 is embedded therein, and the first insulation film 9 is polished until the output electrode 7 is exposed, whereby the surface of the output electrode 7 is exposed from the first insulation film 9 .
- the first insulation film 9 is composed, for example, of silicon oxide.
- a second insulation film 11 composed of an insulating material resistant to the etching in the etching-away of a sacrificing layer which is conducted later is formed on the output electrode 7 and the first insulation film 9 .
- the second insulation film 11 is formed of silicon nitride.
- the inter-layer insulation film may not necessarily be formed to embed the output electrode 7 while having a flat surface; for example, the inter-layer insulation film may cover the output electrode 7 while having a surface shape following up to the disposition of the output electrode 7 , or may have a film thickness smaller than the film thickness of the output electrode 7 .
- the second insulation film 11 is provided with a hole pattern 11 a reaching the output electrode 7 .
- the hole pattern 11 a is formed by etching the second insulation film 11 by use of a resist pattern (not shown) as a mask.
- the hole pattern 11 a formed here is disposed only on the upper side of the output electrode 7 , without protruding from the area of the output electrode 7 .
- the sacrificing layer 13 is composed of a material which can be removed selectively in relation to the second insulation film 11 , for example, silicon oxide.
- silicon oxide for example, an oxide film may be grown on the surface of the output electrode 7 composed of polysilicon by using as a mask the second insulation film 11 composed of silicon nitride, thereby covering the exposed surface of the output electrode 7 with the sacrificing layer 13 composed of silicon oxide.
- a sacrificing layer 13 composed of silicon oxide may be built up on the second insulation film 11 , and then the surface of the sacrificing layer 13 may be polished until the second insulation film 11 is exposed.
- a vibrator electrode 15 is patternedly formed on the sacrificing layer 13 and the second insulation film 11 , in the state of crossing the upper side of the hole pattern 11 a .
- the vibrator electrode 15 is formed in a belt-like pattern such that a part of the hole pattern 11 a and a part of the sacrificing layer 13 formed in the hole pattern 11 a are exposed.
- the hole pattern 11 a and the sacrificing layer 13 may be exposed on both sides in the width W direction of the vibrator electrode 15 .
- the hole pattern 11 a and the sacrificing layer 13 may be exposed only on one side in the width W direction of the vibrator electrode 15 .
- the vibrator electrode 15 is formed on the flat surface. Therefore, in this step, it is possible to minimize the over-etching amount in pattern formation of the vibrator electrode 15 , and to reduce the damage to the base layer (inter-layer insulation film).
- a wiring 17 connected to the vibration electrode 15 is formed on the second insulation film 11 .
- a seed layer (not shown) of gold (Au) is formed on the whole surface of the substrate 4 , and then a resist pattern (not shown) for exposing the portion intended for formation of the wiring while covering the other portions is formed.
- a plating layer is grown on the seed layer in the opening portion of the resist pattern by a plating technique, to form the wiring 17 .
- the resist pattern is removed, and, further, a whole-surface etching is conducted for removing the seed layer.
- a wiring composed of the same layer as the vibrator electrode 15 may be formed in continuity with the vibrator electrode 15 ; in that case, it is unnecessary to separately provide the wiring 17 .
- the sacrificing layer 13 is etched away selectively in relation to the wiring 17 , the vibrator electrode 15 , the second insulation film 11 and the output electrode 7 .
- wet etching by use of buffered hydrofluoric acid is conducted, whereby the sacrificing layer 13 composed of silicon oxide on the lower side of the vibrator electrode 15 is securely removed.
- a space portion (gap) A is formed by removal of the sacrificing layer on the lower side of the vibrator electrode 15 , and the output electrode 7 at the bottom portion of the hole pattern 11 a is exposed. Accordingly, there is obtained a micromachine 20 including the belt-like vibrator electrode 15 provided on the second insulation film 11 in the form of crossing the upper side of the hole pattern 11 a provided as the space portion A.
- the hole pattern 11 a formed in the second insulation film 11 is provided as the space portion A, and the vibrator electrode 15 is disposed to cross the upper side of the space portion A. Therefore, where the vibrator electrode 15 is vibrated by impressing a specified frequency voltage thereon, that portion of the vibration electrode 15 which crosses over the hole pattern 11 a is vibrated, and the portion thus constitutes a beam (vibrating portion) 16 of the vibrator electrode 15 . Therefore, the length (beam length L) of the beam (vibrating portion) is set by the size of the hole pattern 11 a.
- the area of the opposed portions of the vibrator electrode 15 and the output electrode 7 can be made larger in relation to the beam length L, so that the capacitance in relation to the beam length L can be made greater. Therefore, even where the beam length L is miniaturized for the purpose of obtaining a higher frequency, it is possible to maintain the output.
- both end portion, i.e., the anchor portions for supporting the beam (vibrating portion) 16 , of the vibrator electrode 15 are fixed to the second insulation film 11 over the entire surfaces thereof. Therefore, where the vibrator electrode 15 is vibrated by impressing a predetermined frequency voltage is impressed thereon, only the beam (vibrating portion) 16 relates to vibration, in generating vibration. Accordingly, the natural vibration frequency is closer to the theoretical value satisfying the above-mentioned formula (1) (the value inversely proportional to the square of the length L of the vibrating portion). This also makes it easier to achieve a higher frequency through miniaturization.
- the tip ends of the anchor portions for supporting the beam (vibrating portion) 103 a include eaves-like portions B not making close contact with the base; in such a configuration, therefore, the eaves-like portions B have had an influence on the vibration of the beam (vibrating portion) 103 a .
- the simulation results (Simulation) in FIG. 10 in the region where the beam length (L) is-miniaturized, the natural vibration frequency is less than the theoretical value satisfying the above-mentioned formula (1). Thus, it has been difficult to achieve a higher frequency through miniaturization of the beam length L.
- the surface of the inter-layer insulation film (hence, the first insulation film 9 and the second insulation film 11 ) embedding the output electrode 7 therein is made to be flat, it is possible to minimize the parasitic capacitance (capacitance which does not contribute to vibration) generated between the output electrode 7 and the vibrator electrode 15 through the inter-layer insulation film. Therefore, in a high-frequency filter composed of the micromachine 20 , it is also possible to contrive a higher selectivity of frequency (transmission characteristics).
- the vibrator electrode ( 15 a ) may have such a shape that larger-line-width portions are provided at both end portions. Where the vibrator electrode ( 15 a ) with such a shape is provided, it is possible to achieve more secure support of the beam (vibrating portion) 16 at end portions of the vibrator electrode ( 15 a ). As a result, it is possible to make the natural vibration frequency more closer to the theoretical value satisfying the above-mentioned formula (1) (the value inversely proportional to the square of the length L of the vibrating portion).
- connection portion for connecting the vibrator electrode 15 to the input electrode 102 b composed of the same layer as the output electrode 102 a should be provided at one end of the vibrator electrode 103 .
- the vibrator electrode 15 itself functions also as the input electrode, so that it is unnecessary to provide the above-mentioned connection portion and, hence, it is unnecessary to take into account an alignment error in forming such a connection portion. Therefore, as shown in FIG. 4, it is possible to decrease the pitch of the vibrator electrodes 15 and the pitch of the output electrodes 7 , which is advantageous to achievement of a higher degree of integration. Moreover, since the vibrator electrode 15 functions also as the input electrode, when hole patterns 11 a and 11 a giving respective natural vibration frequencies are arranged in a gate array pattern, circuits with various modes can be configured by only changing the layout of the vibrator electrode 15 .
- FIGS. 5A to 5 C are sectional step diagrams showing a manufacturing method according to a second embodiment of the present invention
- FIGS. 6 and 7 are plan views for illustrating the manufacturing method according to the second embodiment.
- FIGS. 5A to 5 C correspond to section A-A in the plan views in FIGS. 6 and 7.
- a vibrator electrode 31 is patternedly formed on the sacrificing layer 13 and the second insulation film 11 , in the state of crossing the upper side of the hole pattern 11 a .
- the vibrator electrode 31 is formed in a belt-like pattern which closes the hole pattern 11 a and is provided with a hole portion or portions 31 a reaching the sacrificing layer 13 inside the hole pattern 11 a , whereby the vibrator electrode 31 is so shaped that a part of the hole pattern 11 a and a part of the sacrificing layer 13 formed inside the hole pattern 11 a are exposed.
- the hole portion or portions 31 a may be provided at two or more locations in the vibrator electrode 31 as shown in FIG.
- the opening area ratio (relative to the hole pattern 11 a ) and the arrangement conditions (inclusive of the number) of the hole portion or portions 31 a are appropriately set so that an output in the frequency band desired can be obtained where the micromachine obtained according to the second embodiment is used as a high-frequency filter.
- a wiring 17 connected to the vibration electrode 31 is formed on the second insulation film 11 . This step is carried out in the same manner as described above referring to FIG. 1G in the first embodiment.
- the sacrificing layer 13 is etched away selectively in relation to the wiring 17 , the vibrator electrode 31 , the second insulation film 11 and the output electrode 7 .
- wet etching by use of buffered hydrofluoric acid is conducted, whereby the etching solution is supplied through the hole portion 31 a to the sacrificing layer 13 , and the sacrificing layer 13 composed of silicon oxide on the lower side of the vibrator electrode 31 is securely removed.
- the hole pattern 11 a is provided as the space portion A
- the vibrator electrode 31 is so disposed as to close the upper side of the hole pattern 11 a
- the vibrator electrode 31 is provided with the hole portion 31 a communicated to the space portion A. Therefore, where the vibrator electrode 31 is vibrated by impressing a specified frequency voltage thereon, that portion of the vibrator electrode 31 which closes the hole pattern 11 a is vibrated and, thus, the portion constitutes a beam (vibrating portion) 31 b of the vibrator electrode 31 . Therefore, the length (beam length L) of the beam (vibrating portion) 31 b is set by the size of the hole pattern 11 a .
- the hole pattern 11 a is closed with the beam (vibrating portion) 31 b , so that the beam (vibrating portion) 31 b is supported by and fixed to the second insulation-film 11 over the entire perimeter thereof. Therefore, the vibration frequency of the vibrator electrode 31 can be made further higher, as compared to the case of the micromachine according to the first embodiment.
- both end portions, i.e., the anchor portions for supporting the beam (vibrating portion) 31 b , of the vibrator electrode 31 are fixed to the second insulation film 11 over the entire surfaces thereof. Therefore, in the same manner as in the micromachine according to the first embodiment, only the beam (vibrating portion) 31 b relates to vibration, in generating vibration. Accordingly, it is possible to realize a high-frequency filter having a high Q value and a higher frequency band.
- the vibrator electrode 31 c may have such a shape that larger-line-width portions are provided at both end portions thereof, whereby it is possible to securely support the beam (vibrating portion) 31 b and to achieve a further enhancement of the natural vibration frequency.
- the vibrator electrode 31 per se functions also as the input electrode, and, therefore, the same effect as described above referring to FIG. 4 in the first embodiment can be obtained.
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Abstract
A micromachine for a high-frequency filter which has a high Q value and a higher frequency band is provided.
The micromachine (20) includes: an output electrode (7) provided on a substrate (1); an inter-layer insulation film composed of a first insulation film (9) and a second insulation film (11) which are provided on the substrate in the state of covering the output electrode (7); a hole pattern (11 a) provided in the second insulation film (11) in the state of reaching the output electrode (7); and a belt-like vibrator electrode (15) provided on the second insulation film (11) so as to cross the upper side of a space portion (A) constituted of the inside of the hole pattern (11 a).
Description
- The present invention relates to a micromachine and a method of manufacturing the same, particularly to a micromachine including a vibrator electrode crossing over an output electrode, with a space portion therebetween, and a method of manufacturing the same.
- Attendant on the advance of the technology of micro-processing on substrates, attention has been paid to the micromachine technology in which a micro-structure and an electrode, a semiconductor integrated circuit and the like for controlling the driving of the micro-structure are provided on a substrate such as a silicon substrate, a glass substrate, etc.
- Among the micromachines, there is a micro-vibrator proposed to be utilized as a high-frequency filter for radio communication. As shown in FIG. 8, a micro-vibrator100 includes a
vibrator electrode 103 disposed over anoutput electrode 102 a provided on asubstrate 101, with a space portion A therebetween. Thevibrator electrode 103 has one end portion connected to aninput electrode 102 b, which is constituted of the same conductive layer as theoutput electrode 102 a. When a specified frequency voltage is impressed on theinput electrode 102 b, a beam (vibrating portion) 103 a of thevibrator electrode 103 provided over theoutput electrode 102 a with the space portion A therebetween is vibrated at a natural vibration frequency, whereby the capacitance of a capacitor constituted of the space portion A between theoutput electrode 102 a and the beam (vibrating portion) 103 a is varied, and the variation in capacitance is outputted from theoutput electrode 102 a. A high-frequency filter composed of the micro-vibrator 100 having such a configuration can realize a higher Q value, as compared with high-frequency filters utilizing surface elastic wave (SAW) or thin film elastic wave (FBAR). - The micro-vibrator as above-mentioned is manufactured as follows. First, as shown in FIG. 9A, an
output electrode 102 a, aninput electrode 102 b, and asupport electrode 102 c which are formed of polysilicon are provided on asubstrate 101 whose surface has been covered with an insulation film. Theseelectrodes 102 a to 102 c are so arranged that theinput electrode 102 b and thesupport electrode 102 c are disposed on the opposite sides of theoutput electrode 102 a. Next, a sacrificinglayer 105 formed of silicon oxide is provided on thesubstrate 101 in the state of covering theelectrodes 102 a to 102 c. - Subsequently, as shown in FIG. 9B, the sacrificing
layer 105 is provided withconnection holes input electrode 102 b and thesupport electrode 102 c, respectively. Thereafter, apolysilicon layer 106 is provided on the upper side of the sacrificinglayer 105, inclusive of the inside of theconnection holes - Next, as shown in FIG. 9C, the
polysilicon layer 106 is patterningly etched, to form a belt-like vibrator electrode 103 extending over theoutput electrode 102 a. In this case, in order to prevent theinput electrode 102 b and thesupport electrode 102 c formed of polysilicon from being etched, thepolysilicon layer 106 is patterningly etched so that theconnection holes - Thereafter, the
sacrificing layer 105 is selectively removed, to form the space portion A between theoutput electrode 102 a and thevibrator electrode 103, thereby completing the micro-vibrator 100, as shown in FIGS. 9A to 9C. -
- where h is film thickness, E is Young's modulus, K is electromagnetic coupling factor, and ρ is film density.
- In the above-mentioned micro-vibrator100, however, since the space portion A and the
vibrator electrode 103 are so provided as to bridge over theoutput electrode 102 a, it is impossible to set the beam length L smaller than the line width of theoutput electrode 102 a. - In addition, where it is intended to miniaturize the beam length L in order to obtain a higher frequency, it is necessary to miniaturize also the line width of the
output electrode 102 a, so that the capacitance between theoutput electrode 102 a and thevibrator electrode 103 is reduced, resulting in a lower output. The above-mentioned points constitute factors which restrict the achievement of a higher frequency through miniaturizing the beam length L. - Accordingly, it is an object of the present invention to provide a micromachine including a vibrator electrode which promises a further advance in achieving a higher frequency through miniaturization of beam length, and a method of manufacturing the same.
- In order to attain the above object, a micromachine according to the present invention includes a vibrator electrode, and is configured as follows. The micromachine according to the present invention has a structure in which an inter-layer insulation film covering an output electrode on a substrate is provided with a hole pattern reaching the output electrode. On the inter-layer insulation film, a belt-like vibrator electrode is provided so as to cross the upper side of the hole pattern which functions as a space portion.
- In the micromachine configured as above, the vibrator electrode is so disposed as to cross the upper side of the hole pattern formed in the inter-layer insulation film as the space portion. Therefore, the vibrator electrode portion crossing over the hole pattern constitutes a beam (vibrating portion) of the vibrator electrode. Accordingly, the length of the beam (vibrating portion) is set by the size of the hole pattern, without dependence on the width of the output electrode, and a vibrator electrode having a beam (vibrating portion) shorter than the width of the output electrode is obtained.
- The present invention resides also in a method of manufacturing a micromachine configured as above, the method being carried out in the following procedure. First, an inter-layer insulation film is formed on a substrate in the state of covering an output electrode on the substrate, and the inter-layer insulation film is provided with a hole pattern reaching the output electrode. Next, the surface of the output electrode in a bottom portion of the hole pattern is covered with a sacrificing layer, and a belt-like vibrator electrode crossing over the hole pattern in the state of exposing a part of the hole pattern is patternedly formed on the sacrificing layer and the inter-layer insulation film. Thereafter, the sacrificing layer in the hole pattern is selectively removed, to thereby provide a space portion between the output electrode and the vibrator electrode.
- Following such a formation procedure, a micromachine having a vibrator electrode configured as above-mentioned is obtained.
- FIGS. 1A to1H are sectional step diagrams showing a manufacturing method according to a first embodiment.
- FIG. 2 is a plan view corresponding to FIG. 1F.
- FIG. 3 is a plan view corresponding to FIG. 1H.
- FIG. 4 is a plan view showing a modified example of the first embodiment.
- FIGS. 5A to5C are sectional step diagrams showing a manufacturing method according to a second embodiment.
- FIG. 6 is a plan view corresponding to FIG. 5A.
- FIG. 7 is a plan view corresponding to FIG. 5C.
- FIG. 8 shows the configuration of a micromachine (micro-vibrator) according to the prior art.
- FIGS. 9A to9C are sectional step diagrams showing a manufacturing method according to the prior art.
- FIG. 10 is a graph for illustrating the problems involved in a micromachine according to the prior art.
- Now, some embodiments of the present invention will be described in detail below, based on the drawings. In each of the following embodiments, a manufacturing method will be described first, and the configuration of a micromachine obtained thereby will be described next.
- <First Embodiment>
- FIGS. 1A to1H are sectional step diagrams showing a manufacturing method according to a first embodiment, and FIGS. 2 and 3 are plan views for illustrating the manufacturing method according to the first embodiment. Here, based on FIGS. 1A to 1H, and referring to FIGS. 2 and 3, the method of manufacturing a micromachine according to the first embodiment will be described. Incidentally, FIGS. 1A to 1H correspond to section A-A in the plan views in FIGS. 2 and 3.
- First, as shown in FIG. 1A, a
substrate 4 including asemiconductor substrate 1, formed of single-crystalline silicon or the like, covered thereon with aninsulation layer 3 is prepared. Preferably, the outermost surface of theinsulation layer 3 is formed of a material resistant to the etching in the etching-away of a sacrificing layer (for example, silicon oxide) which is conducted subsequently. Therefore, for example, asilicon oxide film 3 a for alleviating stresses between theinsulation layer 3 and thesemiconductor substrate 1 and asilicon nitride film 3 b having the above-mentioned etching resistance are laminated in this order, to form theinsulation layer 3. - Next, as shown in FIG. 1B, an
output electrode 7 formed by patterning a first conductive layer is provided on thesubstrate 4. The first conductive layer constituting theoutput electrode 7 is composed, for example, of a silicon layer formed of phosphorus (P)-containing polysilicon or the like. - Thereafter, as shown in FIG. 1C, the upper side of the
substrate 4 is covered with afirst insulation film 9, in the condition where the surface of theoutput electrode 7 is exposed. In this case, for example, thefirst insulation film 9 is formed on thesubstrate 4 in a film thickness larger than the film thickness of theoutput electrode 7 so that theoutput electrode 7 is embedded therein, and thefirst insulation film 9 is polished until theoutput electrode 7 is exposed, whereby the surface of theoutput electrode 7 is exposed from thefirst insulation film 9. Thefirst insulation film 9 is composed, for example, of silicon oxide. - Next, as shown in FIG. 1D, a
second insulation film 11 composed of an insulating material resistant to the etching in the etching-away of a sacrificing layer which is conducted later is formed on theoutput electrode 7 and thefirst insulation film 9. In this case, where the above-mentioned sacrificing layer is formed of silicon oxide, for example, thesecond insulation film 11 is formed of silicon nitride. As a result, an inter-layer insulation film which is constituted of thefirst insulation film 9 and thesecond insulation film 11 and which embeds theoutput electrode 7 therein is obtained. The surface of the inter-layer insulation film is made to be substantially flat. Incidentally, the inter-layer insulation film may not necessarily be formed to embed theoutput electrode 7 while having a flat surface; for example, the inter-layer insulation film may cover theoutput electrode 7 while having a surface shape following up to the disposition of theoutput electrode 7, or may have a film thickness smaller than the film thickness of theoutput electrode 7. - Thereafter, the
second insulation film 11 is provided with ahole pattern 11 a reaching theoutput electrode 7. Thehole pattern 11 a is formed by etching thesecond insulation film 11 by use of a resist pattern (not shown) as a mask. Thehole pattern 11 a formed here is disposed only on the upper side of theoutput electrode 7, without protruding from the area of theoutput electrode 7. - Next, as shown in FIG. 1E, the surface of the
output electrode 7 exposed in a bottom portion of thehole pattern 11 a is covered with the sacrificinglayer 13. The sacrificinglayer 13 is composed of a material which can be removed selectively in relation to thesecond insulation film 11, for example, silicon oxide. In this case, for example, an oxide film may be grown on the surface of theoutput electrode 7 composed of polysilicon by using as a mask thesecond insulation film 11 composed of silicon nitride, thereby covering the exposed surface of theoutput electrode 7 with the sacrificinglayer 13 composed of silicon oxide. Alternatively, a sacrificinglayer 13 composed of silicon oxide may be built up on thesecond insulation film 11, and then the surface of the sacrificinglayer 13 may be polished until thesecond insulation film 11 is exposed. - Thereafter, as shown in FIG. IF and FIG. 2, a
vibrator electrode 15 is patternedly formed on the sacrificinglayer 13 and thesecond insulation film 11, in the state of crossing the upper side of thehole pattern 11 a. Thevibrator electrode 15 is formed in a belt-like pattern such that a part of thehole pattern 11 a and a part of the sacrificinglayer 13 formed in thehole pattern 11 a are exposed. In this case, for example as shown in FIG. 2, thehole pattern 11 a and the sacrificinglayer 13 may be exposed on both sides in the width W direction of thevibrator electrode 15. Alternatively, thehole pattern 11 a and the sacrificinglayer 13 may be exposed only on one side in the width W direction of thevibrator electrode 15. Incidentally, where the surface of the inter-layer insulation film (hence, thefirst insulation film 9 and the second insulation film 11) embedding theoutput electrode 7 therein is made to be substantially flat as has been described referring to FIG. 1D, thevibrator electrode 15 is formed on the flat surface. Therefore, in this step, it is possible to minimize the over-etching amount in pattern formation of thevibrator electrode 15, and to reduce the damage to the base layer (inter-layer insulation film). - Next, as shown in FIG. 1G, a
wiring 17 connected to thevibration electrode 15 is formed on thesecond insulation film 11. In forming thewiring 17, for example, first, a seed layer (not shown) of gold (Au) is formed on the whole surface of thesubstrate 4, and then a resist pattern (not shown) for exposing the portion intended for formation of the wiring while covering the other portions is formed. Next, a plating layer is grown on the seed layer in the opening portion of the resist pattern by a plating technique, to form thewiring 17. After the formation of thewiring 17, the resist pattern is removed, and, further, a whole-surface etching is conducted for removing the seed layer. Incidentally, in forming thevibrator electrode 15, a wiring composed of the same layer as thevibrator electrode 15 may be formed in continuity with thevibrator electrode 15; in that case, it is unnecessary to separately provide thewiring 17. - Thereafter, the sacrificing
layer 13 is etched away selectively in relation to thewiring 17, thevibrator electrode 15, thesecond insulation film 11 and theoutput electrode 7. In this case, wet etching by use of buffered hydrofluoric acid is conducted, whereby the sacrificinglayer 13 composed of silicon oxide on the lower side of thevibrator electrode 15 is securely removed. - As a result, as shown in FIG. 1H and FIG. 3, a space portion (gap) A is formed by removal of the sacrificing layer on the lower side of the
vibrator electrode 15, and theoutput electrode 7 at the bottom portion of thehole pattern 11 a is exposed. Accordingly, there is obtained amicromachine 20 including the belt-like vibrator electrode 15 provided on thesecond insulation film 11 in the form of crossing the upper side of thehole pattern 11 a provided as the space portion A. - In the
micromachine 20 configured as above, thehole pattern 11 a formed in thesecond insulation film 11 is provided as the space portion A, and thevibrator electrode 15 is disposed to cross the upper side of the space portion A. Therefore, where thevibrator electrode 15 is vibrated by impressing a specified frequency voltage thereon, that portion of thevibration electrode 15 which crosses over thehole pattern 11 a is vibrated, and the portion thus constitutes a beam (vibrating portion) 16 of thevibrator electrode 15. Therefore, the length (beam length L) of the beam (vibrating portion) is set by the size of thehole pattern 11 a. - Accordingly, the following can be said. In a micromachine having the conventional structure in which the space portion A and the
vibrator electrode 103 are disposed so as to bridge over theoutput electrode 102 a as has been described above referring to FIG. 8, it has been impossible to set the beam length L of thevibrator electrode 103 smaller than the minimum processed size of theoutput electrode 102 a. In contrast, in themicromachine 20 according to the first embodiment of the present invention as shown in FIG. 1H and FIG. 3, it is possible to reduce the beam length L of thevibrator electrode 15 to the minimum processed size of thehole pattern 11 a, independently of the line width of theoutput electrode 7. Therefore, it is possible to achieve a further miniaturization of the beam length L and to thereby achieve a further higher frequency. - Here, comparison of the capacitance generated between the
vibrator electrode 15 and theoutput electrode 7 is made, between the micromachine having the conventional structure (see FIG. 8) and themicromachine 20 according to the first embodiment of the present invention. In themicromachine 20 according to the first embodiment, the area of the opposed portions of thevibrator electrode 15 and theoutput electrode 7 can be made larger in relation to the beam length L, so that the capacitance in relation to the beam length L can be made greater. Therefore, even where the beam length L is miniaturized for the purpose of obtaining a higher frequency, it is possible to maintain the output. - Furthermore, in the
micromachine 20 having the configuration according to the first embodiment, both end portion, i.e., the anchor portions for supporting the beam (vibrating portion) 16, of thevibrator electrode 15 are fixed to thesecond insulation film 11 over the entire surfaces thereof. Therefore, where thevibrator electrode 15 is vibrated by impressing a predetermined frequency voltage is impressed thereon, only the beam (vibrating portion) 16 relates to vibration, in generating vibration. Accordingly, the natural vibration frequency is closer to the theoretical value satisfying the above-mentioned formula (1) (the value inversely proportional to the square of the length L of the vibrating portion). This also makes it easier to achieve a higher frequency through miniaturization. - On the other hand, in the
micromachine 20 having the conventional configuration shown in FIG. 8, due to convenience in manufacturing process, the tip ends of the anchor portions for supporting the beam (vibrating portion) 103 a include eaves-like portions B not making close contact with the base; in such a configuration, therefore, the eaves-like portions B have had an influence on the vibration of the beam (vibrating portion) 103 a. Accordingly, as indicated by the simulation results (Simulation) in FIG. 10, in the region where the beam length (L) is-miniaturized, the natural vibration frequency is less than the theoretical value satisfying the above-mentioned formula (1). Thus, it has been difficult to achieve a higher frequency through miniaturization of the beam length L. - As a result of the foregoing, by use of the
micromachine 20 configured according to this embodiment, it is possible to realize a high-frequency filter having a high Q value and a higher frequency band. - In addition, particularly where the surface of the inter-layer insulation film (hence, the
first insulation film 9 and the second insulation film 11) embedding theoutput electrode 7 therein is made to be flat, it is possible to minimize the parasitic capacitance (capacitance which does not contribute to vibration) generated between theoutput electrode 7 and thevibrator electrode 15 through the inter-layer insulation film. Therefore, in a high-frequency filter composed of themicromachine 20, it is also possible to contrive a higher selectivity of frequency (transmission characteristics). - In the first embodiment above, description has been made of the case where the line width W of the
vibrator electrode 15 is constant, as shown in FIG. 2. However, as indicated by the two-dotted chain line in FIG. 2, the vibrator electrode (15 a) may have such a shape that larger-line-width portions are provided at both end portions. Where the vibrator electrode (15 a) with such a shape is provided, it is possible to achieve more secure support of the beam (vibrating portion) 16 at end portions of the vibrator electrode (15 a). As a result, it is possible to make the natural vibration frequency more closer to the theoretical value satisfying the above-mentioned formula (1) (the value inversely proportional to the square of the length L of the vibrating portion). - Besides, in the conventional micromachine described referring to FIG. 8, it has been necessary that a connection portion for connecting the
vibrator electrode 15 to theinput electrode 102 b composed of the same layer as theoutput electrode 102 a should be provided at one end of thevibrator electrode 103. - On the other hand, in the
micromachine 20 according to the first embodiment of the present invention, thevibrator electrode 15 itself functions also as the input electrode, so that it is unnecessary to provide the above-mentioned connection portion and, hence, it is unnecessary to take into account an alignment error in forming such a connection portion. Therefore, as shown in FIG. 4, it is possible to decrease the pitch of thevibrator electrodes 15 and the pitch of theoutput electrodes 7, which is advantageous to achievement of a higher degree of integration. Moreover, since thevibrator electrode 15 functions also as the input electrode, whenhole patterns vibrator electrode 15. - <Second Embodiment>
- FIGS. 5A to5C are sectional step diagrams showing a manufacturing method according to a second embodiment of the present invention, and FIGS. 6 and 7 are plan views for illustrating the manufacturing method according to the second embodiment. Here, based on FIGS. 5A to 5C, and referring to FIGS. 6 and 7, the method of manufacturing a micromachine according to the second embodiment will be described. Incidentally, FIGS. 5A to 5C correspond to section A-A in the plan views in FIGS. 6 and 7.
- First, the same steps as those described above referring to FIGS. 1A to1E in the first embodiment are carried out. As a result of the steps, an
output electrode 7 and an inter-layer insulation film composed of afirst insulation film 9 and asecond insulation film 11 are formed on asubstrate 4, thesecond insulation film 11 is provided with ahole pattern 11 a, theoutput electrode 7 is exposed at a bottom portion of thehole pattern 11 a, and the exposed surface of theoutput electrode 7 is covered with a sacrificinglayer 13. - Thereafter, as shown in FIG. 5A and FIG. 6, a
vibrator electrode 31 is patternedly formed on the sacrificinglayer 13 and thesecond insulation film 11, in the state of crossing the upper side of thehole pattern 11 a. Thevibrator electrode 31 is formed in a belt-like pattern which closes thehole pattern 11 a and is provided with a hole portion orportions 31 a reaching the sacrificinglayer 13 inside thehole pattern 11 a, whereby thevibrator electrode 31 is so shaped that a part of thehole pattern 11 a and a part of the sacrificinglayer 13 formed inside thehole pattern 11 a are exposed. The hole portion orportions 31 a may be provided at two or more locations in thevibrator electrode 31 as shown in FIG. 6 (in the figure, two locations), or may be provided at one location in thevibrator electrode 31. It should be noted, however, that the opening area ratio (relative to thehole pattern 11 a) and the arrangement conditions (inclusive of the number) of the hole portion orportions 31 a are appropriately set so that an output in the frequency band desired can be obtained where the micromachine obtained according to the second embodiment is used as a high-frequency filter. - Next, as shown in FIG. 5B, a
wiring 17 connected to thevibration electrode 31 is formed on thesecond insulation film 11. This step is carried out in the same manner as described above referring to FIG. 1G in the first embodiment. - Thereafter, in the same manner as in the first embodiment, the sacrificing
layer 13 is etched away selectively in relation to thewiring 17, thevibrator electrode 31, thesecond insulation film 11 and theoutput electrode 7. In this case, wet etching by use of buffered hydrofluoric acid is conducted, whereby the etching solution is supplied through thehole portion 31 a to the sacrificinglayer 13, and the sacrificinglayer 13 composed of silicon oxide on the lower side of thevibrator electrode 31 is securely removed. - As a result, as shown in FIG. 5C and FIG. 7, the sacrificing layer on the lower side of the
vibrator electrode 31 is removed to form a space portion (gap) A, and theoutput electrode 7 in the bottom portion of thehole pattern 11 a is exposed. Thus, there is obtained amicromachine 40 in which the belt-like vibrator electrode 31 which closes thehole pattern 11 a as the space portion A and which is provided with thehole portion 31 a communicated to the space portion A in thehole pattern 11 a is provided on thesecond insulation film 11. - In the
micromachine 40 configured as above, thehole pattern 11 a is provided as the space portion A, thevibrator electrode 31 is so disposed as to close the upper side of thehole pattern 11 a, and thevibrator electrode 31 is provided with thehole portion 31 a communicated to the space portion A. Therefore, where thevibrator electrode 31 is vibrated by impressing a specified frequency voltage thereon, that portion of thevibrator electrode 31 which closes thehole pattern 11 a is vibrated and, thus, the portion constitutes a beam (vibrating portion) 31 b of thevibrator electrode 31. Therefore, the length (beam length L) of the beam (vibrating portion) 31 b is set by the size of thehole pattern 11 a. Accordingly, in the same manner as in the first embodiment, it is possible to set the length (beam length L) of the beam (vibrating portion) 31 b by the size of thehole pattern 11 a, independently of the line width of theoutput electrode 7. As a result, it is possible to achieve a higher frequency through miniaturization of the beam length L and to maintain the output. - Particularly, in the
micromachine 40 according to the second embodiment, thehole pattern 11 a is closed with the beam (vibrating portion) 31 b, so that the beam (vibrating portion) 31 b is supported by and fixed to the second insulation-film 11 over the entire perimeter thereof. Therefore, the vibration frequency of thevibrator electrode 31 can be made further higher, as compared to the case of the micromachine according to the first embodiment. - Furthermore, in the
micromachine 40 configured according to the second embodiment, also, both end portions, i.e., the anchor portions for supporting the beam (vibrating portion) 31 b, of thevibrator electrode 31 are fixed to thesecond insulation film 11 over the entire surfaces thereof. Therefore, in the same manner as in the micromachine according to the first embodiment, only the beam (vibrating portion) 31 b relates to vibration, in generating vibration. Accordingly, it is possible to realize a high-frequency filter having a high Q value and a higher frequency band. - In the above-described second embodiment, also, as indicated by the two-dotted chain line in FIG. 6, the
vibrator electrode 31 c may have such a shape that larger-line-width portions are provided at both end portions thereof, whereby it is possible to securely support the beam (vibrating portion) 31 b and to achieve a further enhancement of the natural vibration frequency. - In addition, even in the
micromachine 40 according to the second embodiment, thevibrator electrode 31 per se functions also as the input electrode, and, therefore, the same effect as described above referring to FIG. 4 in the first embodiment can be obtained. - As has been described above, according to the micromachine and the method of manufacturing the same according to the present invention, with the configuration in which the inter-layer insulation film covering the output electrode is provided with the hole pattern and the vibrator electrode crossing the hole pattern is provided over the space portion constituted of the inside of the hole pattern, it is possible to set the length of the beam (vibrating portion) smaller than the width of the output electrode and to enlarge the capacitance between the output electrode and the vibrator electrode in relation to the length of the vibrating portion. Therefore, it becomes easy to achieve a higher frequency through miniaturization of the beam (vibrating portion) length and it becomes possible to realize a high-frequency filter having a high Q value and a higher frequency band.
Claims (6)
1. A micromachine comprising:
an output electrode provided on a substrate,
an inter-layer insulation film provided on said substrate in the state of covering said output electrode,
a hole pattern provided in said inter-layer insulation film in the state-of reaching said output electrode, and
a belt-like vibrator electrode provided on said inter-layer insulation film so as to cross the upper side of a space portion constituted of the inside of said hole pattern.
2. A micromachine as set forth in claim 1 , wherein:
said vibrator electrode is disposed in the state of closing said hole pattern, and is provided with a hole portion reaching said space portion in said hole pattern.
3. A micromachine as set forth in claim 1 , wherein:
said output electrode is embedded in said inter-layer insulation film.
4. A method of manufacturing a micromachine, comprising:
a first step of forming an output electrode on a substrate;
a second step of forming an inter-layer insulation film on said substrate in the state of covering said output electrode, and providing said inter-layer insulation film with a hole pattern reaching said output electrode;
a third step of covering the surface of said output electrode at a bottom portion of said hole pattern with a sacrificing layer;
a fourth step of patterningly forming a belt-like vibrator electrode crossing the upper side of said hole pattern in such a state that a part of said hole pattern is exposed, on said sacrificing layer and said inter-layer insulation film; and
a fifth step of selectively removing said sacrificing layer inside said hole pattern to thereby provide a space portion between said output electrode and said vibrator electrode.
5. A method of manufacturing a micromachine as set forth in claim 4 , wherein:
in the method of forming said vibrator electrode,
in said second step, said inter-layer insulation film is so formed as to embed said output electrode therein.
6. A method of manufacturing a micromachine as set forth in claim 4 , wherein
in the method of forming said vibrator electrode,
in said fourth step, said vibrator electrode is patternedly formed in such a shape as to close said hole pattern and to be provided with a hole portion reaching said sacrificing layer in said hole pattern.
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JP2002232324A JP4007115B2 (en) | 2002-08-09 | 2002-08-09 | Micromachine and manufacturing method thereof |
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JP4007115B2 (en) | 2007-11-14 |
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TWI235135B (en) | 2005-07-01 |
WO2004014784A1 (en) | 2004-02-19 |
TW200415117A (en) | 2004-08-16 |
CN1568284A (en) | 2005-01-19 |
EP1528037A1 (en) | 2005-05-04 |
CN1268538C (en) | 2006-08-09 |
EP1528037A4 (en) | 2007-09-12 |
KR101007612B1 (en) | 2011-01-12 |
JP2004066432A (en) | 2004-03-04 |
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