US20040135568A1 - Integrated transformer based step-up converter - Google Patents
Integrated transformer based step-up converter Download PDFInfo
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- US20040135568A1 US20040135568A1 US10/341,615 US34161503A US2004135568A1 US 20040135568 A1 US20040135568 A1 US 20040135568A1 US 34161503 A US34161503 A US 34161503A US 2004135568 A1 US2004135568 A1 US 2004135568A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/1563—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators without using an external clock
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/338—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement
- H02M3/3382—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement in a push-pull circuit arrangement
- H02M3/3384—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in a self-oscillating arrangement in a push-pull circuit arrangement of the parallel type
Definitions
- the present invention relates to a step-up converter based on an integrated transformer. More particularly, the invention relates to a step-up converter based on an integrated transformer that can be used as an alternative or a complement to conventional capacitive charge pump circuits.
- FIG. 1 The typical diagram of a four-phase NMOS charge pump is shown in FIG. 1, which shows generic stages. In addition to the gate precharge circuits, there are often branches for precharging to V dd for the intermediate nodes of the pump.
- Each stage is composed of a boost capacitor C(k) and by a pass transistor M(k); the figure also shows a switch M′(k), whose purpose is to precharge the node PRE(k) and the four phases A, B, C and D, whose timing is shown in FIG. 2.
- Both the boost phases B and D and the control phases A and C vary between 0 and V dd .
- B goes high
- the phase D has not yet reached 0 and the transistor M′(k) remains on, allowing to precharge the mode PRE(k) up to the potential value of the node k.
- C switches, and D reaches the low logic value, switches off M′(k) and allows the isolation of the node PRE(k).
- the phase C provides a miniboost effect on the gate of the transistor M(k), switching it on and partly limiting the problems linked to threshold voltage loss.
- the packet of charge is transferred from the capacitor C(k) to the capacitor of the next stage C(k+1).
- the pass transistor opens and the node PRE(k) returns to the potential of the node k by virtue of M′(k) as soon as B has returned to the low value.
- suitable circuits for biasing the NMOS that provide the pass transistors are used, utilizing a partitioned version of the output voltage of the pump.
- the architecture with two phases with voltage boost of the controls and low-voltage transistors is based on the use of low-voltage transistors for the execution of the individual stages and furthermore utilizes higher operating frequencies than used in conventional solutions (100 MHz instead of 10-20 MHz).
- the output resistance of a capacitive charge pump can in fact be reduced by increasing the operating frequency and by using MOS transistors with a low threshold to speed up the charge transfer operations.
- this type of approach forces the use of low-voltage transistors, which due to problems linked to possible oxide punch-through cannot withstand at their terminals voltages higher than the power supply.
- the single stage and a general diagram of a three-stage charge pump are shown in FIGS. 3 and 4. Each stage allows to obtain, in theory, a gain equal to the supply voltage, is provided without resorting to high-voltage MOS and is driven by two phases which must be perfectly nonoverlapping.
- Cpar indicates the parasitic capacitances of the internal nodes of the individual stage, Rout is the output resistance of the charge pump, and Rswitch is the channel resistance of each MOS.
- V out V dd +n ⁇ v
- the main cause of power dissipation is constituted by the driving stages that lie downstream of the clocks.
- I(V dd ) and V out are the average values of I(V dd ) and V out .
- the aim of the present invention is to provide a step-up converter based on an integrated transformer that can be used as an alternative or complement to conventional capacitive charge pump circuits.
- an object of the present invention is to provide a step-up converter based on an integrated transformer that allows to achieve an area reduction with respect to known types of circuit.
- Another object of the present invention is to provide a step-up converter based on an integrated transformer that has a shorter output rise time than known types of circuit.
- Another object of the present invention is to provide a step-up converter based on integrated transformer that allows to have output voltage adjustment.
- Another object of the present invention is to provide a step-up converter based on an integrated transformer that is highly reliable, relatively simple to provide and at competitive costs.
- a step-up converter based on an integrated transformer comprising a self-resonating oscillator circuit that has inductive elements constituted by primary and secondary windings of at least one first transformer, said self-resonating oscillator circuit being powered by an external supply voltage.
- FIG. 2 is a view of the timing of the four-phase charge pump circuit of FIG. 1;
- FIG. 3 is the diagram of a stage of a known type of two-phase charge pump circuit
- FIG. 4 is a diagram of a known type of three-stage two-phase charge pump circuit
- FIG. 5 is a diagram of a known type of LC oscillator
- FIG. 6 is a schematic view of the step-up converter according to a first embodiment of the present invention.
- FIG. 7 is a schematic view of a second embodiment of the step-up converter according to the present invention.
- FIG. 8 is a schematic view of a voltage multiplier used in the step-up converter of FIG. 7.
- FIG. 9 is a view of the circuit model of the transformer used in the converters shown in FIGS. 6 and 7.
- step-up converter according to a first embodiment is shown in FIG. 6.
- the step-up converter according to the first embodiment adopts an LC sinusoidal oscillator with negative differential resistance, as shown in FIG. 5, widely used in integrated RF technologies.
- the primary windings of the transformers 10 and 11 are respectively connected to the supply voltage V dd as regards the primary windings P 1 and to MOS transistors M 1 and M 2 respectively for the primary winding P 2 of the transformer 10 and the primary winding P 2 of the transformer 11 .
- the gate terminals of the MOS transistors M 1 and M 2 are conveniently connected to the primary winding P 2 of the transformer that is opposite to the one to which the MOS transistors M 1 and M 2 are respectively connected.
- a third MOS transistor M 3 is connected by means of its drain terminal to the source terminals of the MOS transistors M 1 and M 2 .
- Said MOS transistors M 1 and M 2 together with the MOS transistor M 3 , have their body terminals connected to the ground.
- the bulk terminals can be connected to the source in order to limit the body effect.
- the gate terminal of the transistor M 3 instead receives a control voltage Vc.
- the reference numeral 12 in FIG. 6 designates a load of the resistive-capacitive type driven by the step-up converter.
- Diodes D 1 and D 2 connected in series to the secondary winding S 2 of the transformer 10 and connected to the secondary winding S 1 of the transformer 11 , together with the capacitor C connected between the gate terminal and the drain terminal of the MOS transistors M 1 and M 2 and the line that connects the secondary winding respectively S 1 of the transformer 11 and the cathode of D 1 are meant to increase the voltage on the cathode of the diode D 1 in order to improve the performance of the converter.
- An additional diode D 3 is interposed between the secondary winding S 2 of the transformer 11 and the load 12 driven by the step-up converter according to the invention.
- the converter is self-resonating, since the oscillation that is established is due entirely to the inductive and capacitive (parasitic) effects of the transformers, without the need for additional reactive components.
- the advantage of self-resonance is that frequency tuning is not necessary and compensations of any process variations are not necessary.
- the step-up converter has an efficiency, including all losses including the oscillator, of 16.2% with an output at 10 V, without any need for a clock signal.
- the efficiency was determined as a ratio between the power supplied to the load 12 and the power delivered by the supply (product of the supply voltage and the average current absorbed by the converter).
- the transformer 15 is connected by means of the secondary winding S 1 to the drain terminal of the MOS transistor M 2 , by means of the primary winding P 1 to the secondary winding S 2 and to the power supply terminal V dd , and by means of the primary winding P 2 to the drain terminal of the transistor M 1 .
- Both embodiments require from outside only the supply voltage V dd and can provide an oscillator control pin Vc, in order to switch on and off the converter in order to adjust the output voltage by analog means (for example in order to maintain a stable output voltage as the load conditions vary).
- the model of the transformer is constituted by three mutually identical stages.
- the step-up converter according to the present invention allows a reduction in the area occupied on the chip with respect to voltage boosters of the known type and also allows to have a shorter output voltage rise time than known types of circuit, for an equal driven equivalent load.
- both of the illustrated embodiments provide an oscillator control pin for switching on and off the converter and for adjusting the output voltage by analog means.
Abstract
Description
- The present invention relates to a step-up converter based on an integrated transformer. More particularly, the invention relates to a step-up converter based on an integrated transformer that can be used as an alternative or a complement to conventional capacitive charge pump circuits.
- In many fields of integrated electronics, as in the case of memory integration, some fundamental operations cannot be performed by applying only the low voltages of the power supply: one example is given by the write and delete operations of Flash and EEPROM memories. This aspect becomes more important in the field of microcontrollers with integrated Flash memories, where increasingly extreme scaling of the supply voltages contrasts with a substantial stability of the voltage levels required for programming. The task of capacitive charge pumps is therefore to generate voltage values higher than the power supply by using capacitors as storage systems in which the charge that will accumulate toward the output is made to pass. One of the most significant parameters for describing the performance of a charge pump is its efficiency, whose maximization has been the focus of the efforts made in recent years to improve known voltage booster architectures.
- One characteristic that is common to all charge pumps is that it is impossible to achieve a complete charge transfer from one stage to the next, due to the loss of a threshold voltage of each one of the MOS used as diodes or due to the excessive channel resistance of the pass transistors. In particular, when the transistors are connected as diodes, the asymptotic charging level reached between one stage and the next is equal to the supply voltage minus a threshold VT, which becomes increasingly important as one approaches the last stages of the pump, where the body effect becomes predominant.
- In the current background art, the charge pumps most frequently used to generate the high voltage levels required for the operation of non-volatile memories are based on control systems with four phases without voltage boosting. One rather valid architecture is also the one that uses a simple system with two phases, assisted by an operating frequency that is higher than the ones normally used.
- The typical diagram of a four-phase NMOS charge pump is shown in FIG. 1, which shows generic stages. In addition to the gate precharge circuits, there are often branches for precharging to Vdd for the intermediate nodes of the pump.
- Each stage is composed of a boost capacitor C(k) and by a pass transistor M(k); the figure also shows a switch M′(k), whose purpose is to precharge the node PRE(k) and the four phases A, B, C and D, whose timing is shown in FIG. 2. Both the boost phases B and D and the control phases A and C vary between 0 and Vdd. When B goes high, the phase D has not yet reached 0 and the transistor M′(k) remains on, allowing to precharge the mode PRE(k) up to the potential value of the node k. Then C switches, and D reaches the low logic value, switches off M′(k) and allows the isolation of the node PRE(k). The phase C provides a miniboost effect on the gate of the transistor M(k), switching it on and partly limiting the problems linked to threshold voltage loss.
- The packet of charge is transferred from the capacitor C(k) to the capacitor of the next stage C(k+1). When C and D switch again, the pass transistor opens and the node PRE(k) returns to the potential of the node k by virtue of M′(k) as soon as B has returned to the low value. In order to minimize the problems introduced by the body effect on the increase in the threshold voltages, suitable circuits for biasing the NMOS that provide the pass transistors are used, utilizing a partitioned version of the output voltage of the pump.
- The architecture with two phases with voltage boost of the controls and low-voltage transistors is based on the use of low-voltage transistors for the execution of the individual stages and furthermore utilizes higher operating frequencies than used in conventional solutions (100 MHz instead of 10-20 MHz). The output resistance of a capacitive charge pump can in fact be reduced by increasing the operating frequency and by using MOS transistors with a low threshold to speed up the charge transfer operations. However, this type of approach forces the use of low-voltage transistors, which due to problems linked to possible oxide punch-through cannot withstand at their terminals voltages higher than the power supply. The single stage and a general diagram of a three-stage charge pump are shown in FIGS. 3 and 4. Each stage allows to obtain, in theory, a gain equal to the supply voltage, is provided without resorting to high-voltage MOS and is driven by two phases which must be perfectly nonoverlapping.
-
- where C=C0=C1; Cpar indicates the parasitic capacitances of the internal nodes of the individual stage, Rout is the output resistance of the charge pump, and Rswitch is the channel resistance of each MOS.
- If n stages are cascade-connected, one obtains:
- V out =V dd +n·Δv
-
- where I(Vdd) and Vout are the average values of I(Vdd) and Vout.
- A series of measurements was taken on 3- and 5-stage pumps implemented in 0.18-μm technology (6 levels of metal) with NMOS in triple well and supply voltages between 1.6 and 2V as the current drawn at the output and the frequency of the two phases varied. The results have shown a bell-curve behavior of the efficiency as the output current varies, with a peak around 350 μA. Other advantages of the high frequencies used are a rather short rise time and a reduction in the ripple on the output voltage.
- The drawbacks of conventional capacitive charge pump circuits are high chip area occupation, long output rise time, and the lack of the possibility to adjust the output voltage of said circuit.
- The aim of the present invention is to provide a step-up converter based on an integrated transformer that can be used as an alternative or complement to conventional capacitive charge pump circuits.
- Within this aim, an object of the present invention is to provide a step-up converter based on an integrated transformer that allows to achieve an area reduction with respect to known types of circuit.
- Another object of the present invention is to provide a step-up converter based on an integrated transformer that has a shorter output rise time than known types of circuit.
- Another object of the present invention is to provide a step-up converter based on integrated transformer that allows to have output voltage adjustment.
- Another object of the present invention is to provide a step-up converter based on an integrated transformer that is highly reliable, relatively simple to provide and at competitive costs.
- This aim and these and other objects that will become better apparent hereinafter are achieved by a step-up converter based on an integrated transformer, comprising a self-resonating oscillator circuit that has inductive elements constituted by primary and secondary windings of at least one first transformer, said self-resonating oscillator circuit being powered by an external supply voltage.
- Further characteristics and advantages of the invention will become better apparent from the description of preferred but not exclusive embodiments of the converter according to the present invention, illustrated only by way of non-limitative example in the accompanying drawings, wherein:
- FIG. 1 is a view of generic stages of a known type of four-phase charge pump circuit;
- FIG. 2 is a view of the timing of the four-phase charge pump circuit of FIG. 1;
- FIG. 3 is the diagram of a stage of a known type of two-phase charge pump circuit;
- FIG. 4 is a diagram of a known type of three-stage two-phase charge pump circuit;
- FIG. 5 is a diagram of a known type of LC oscillator;
- FIG. 6 is a schematic view of the step-up converter according to a first embodiment of the present invention;
- FIG. 7 is a schematic view of a second embodiment of the step-up converter according to the present invention;
- FIG. 8 is a schematic view of a voltage multiplier used in the step-up converter of FIG. 7; and
- FIG. 9 is a view of the circuit model of the transformer used in the converters shown in FIGS. 6 and 7.
- With reference to the cited figures, and particularly with reference to FIGS.6 to 9, the step-up converter according to a first embodiment is shown in FIG. 6.
- The step-up converter according to the first embodiment adopts an LC sinusoidal oscillator with negative differential resistance, as shown in FIG. 5, widely used in integrated RF technologies.
- The availability of a sinusoidal source allows to utilize to the fullest extent the frequency response characteristics of the integrated transformer, which has a voltage gain peak proximate to the resonance frequency.
- In the circuit shown in FIG. 6, the inductors of the LC oscillator, designated by L in FIG. 5, are replaced with primary windings P1 and P2 of two
integrated transformers - The primary windings of the
transformers transformer 10 and the primary winding P2 of thetransformer 11. - The gate terminals of the MOS transistors M1 and M2 are conveniently connected to the primary winding P2 of the transformer that is opposite to the one to which the MOS transistors M1 and M2 are respectively connected.
- A third MOS transistor M3 is connected by means of its drain terminal to the source terminals of the MOS transistors M1 and M2. Said MOS transistors M1 and M2, together with the MOS transistor M3, have their body terminals connected to the ground. In the case of triple-well MOS transistors M1 and M2, the bulk terminals can be connected to the source in order to limit the body effect.
- The gate terminal of the transistor M3 instead receives a control voltage Vc.
- The
reference numeral 12 in FIG. 6 designates a load of the resistive-capacitive type driven by the step-up converter. - Diodes D1 and D2, connected in series to the secondary winding S2 of the
transformer 10 and connected to the secondary winding S1 of thetransformer 11, together with the capacitor C connected between the gate terminal and the drain terminal of the MOS transistors M1 and M2 and the line that connects the secondary winding respectively S1 of thetransformer 11 and the cathode of D1 are meant to increase the voltage on the cathode of the diode D1 in order to improve the performance of the converter. - An additional diode D3 is interposed between the secondary winding S2 of the
transformer 11 and theload 12 driven by the step-up converter according to the invention. - The converter is self-resonating, since the oscillation that is established is due entirely to the inductive and capacitive (parasitic) effects of the transformers, without the need for additional reactive components. The advantage of self-resonance is that frequency tuning is not necessary and compensations of any process variations are not necessary.
- The step-up converter has an efficiency, including all losses including the oscillator, of 16.2% with an output at 10 V, without any need for a clock signal.
- The efficiency was determined as a ratio between the power supplied to the
load 12 and the power delivered by the supply (product of the supply voltage and the average current absorbed by the converter). - The main advantage of the proposed solution is the occupation of area, with an extremely great reduction with respect to the voltage boosters currently in use.
- The second embodiment of the step-up converter according to the present invention is instead shown in FIG. 7, and in this case the LC oscillator uses, as inductive elements, the primary and secondary windings of a
single transformer 15, designated by a different reference numeral than thetransformers transformer 15 is connected by means of the secondary winding S1 to the drain terminal of the MOS transistor M2, by means of the primary winding P1 to the secondary winding S2 and to the power supply terminal Vdd, and by means of the primary winding P2 to the drain terminal of the transistor M1. - Both embodiments require from outside only the supply voltage Vdd and can provide an oscillator control pin Vc, in order to switch on and off the converter in order to adjust the output voltage by analog means (for example in order to maintain a stable output voltage as the load conditions vary).
- FIG. 9 is a schematic view of the circuit model of the
transformer transformer 15 used in the first and second embodiments of the converter according to the present invention. P1, P2 and S1 and S2 designate respectively the terminals of the primary and secondary windings of the transformer. - The model of the transformer is constituted by three mutually identical stages.
- Essentially, the step-up converter according to the present invention, both in the first embodiment and in the second embodiment, allows a reduction in the area occupied on the chip with respect to voltage boosters of the known type and also allows to have a shorter output voltage rise time than known types of circuit, for an equal driven equivalent load.
- Moreover, both of the illustrated embodiments provide an oscillator control pin for switching on and off the converter and for adjusting the output voltage by analog means.
- In practice it has been found that the step-up converter according to the present invention fully achieves the intended aim and objects.
- The converter according to the invention is susceptible of numerous modifications and variations, all of which are within the scope of the appended claims; all the details may further be replaced with other technically equivalent elements.
Claims (12)
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JP4778374B2 (en) * | 2006-07-12 | 2011-09-21 | 富士通株式会社 | Phase shifter circuit |
RU2562777C1 (en) * | 2014-05-27 | 2015-09-10 | Открытое акционерное общество "Государственный научный центр Научно-исследовательский институт атомных реакторов" | Method to control stability of conversion factor for differential-transformer converter |
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US6639481B1 (en) * | 2002-08-20 | 2003-10-28 | Intel Corporation | Transformer coupled quadrature tuned oscillator |
US6850122B2 (en) * | 2003-03-28 | 2005-02-01 | Intel Corporation | Quadrature oscillator and methods thereof |
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