US20040127143A1 - Apparatus and methods for slurry flow control - Google Patents
Apparatus and methods for slurry flow control Download PDFInfo
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- US20040127143A1 US20040127143A1 US10/676,643 US67664303A US2004127143A1 US 20040127143 A1 US20040127143 A1 US 20040127143A1 US 67664303 A US67664303 A US 67664303A US 2004127143 A1 US2004127143 A1 US 2004127143A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Definitions
- the present disclosure relates generally to chemical mechanical polishing apparatus, and more particularly to apparatus and methods for slurry flow control.
- CMP chemical mechanical polishing
- the CMP process is a method for planarizing a surface of a certain material layer by generating a chemical reaction using slurry and applying a mechanical polishing force.
- the CMP process advantageously achieves polishing thickness precision and polishing uniformity for the whole substrate. Therefore, the CMP process has recently become an important process to produce a semiconductor device with fine line width.
- the CMP process is performed in such a way that a circuit forming surface of a wafer is pressed against a surface of a polishing pad after a back face of the wafer has been attached to a wafer carrier.
- the polishing pad is composed of polyurethane or poly tex. The hardness and density of the polishing pad are selected according to the materials constituting the surface to be polished.
- Slurry solution for chemical planarization is injected onto the surface to be polished.
- Slurry may comprise various kinds of particles and solutions.
- the particles may include cerium oxide, silica (SiO2), alumina (Al2O3), or manganese oxide.
- Slurry can be classified according to the kinds of particles it contains.
- the particles have different shape, density and hardness based on their own compositions. Although the particles have the same compositions with respect to each other, the characteristics thereof can be different due to their preparation methods.
- FIG. 1 is a block diagram showing a conventional slurry supply system.
- the slurry supply system of FIG. 1 comprises a slurry supply unit 101 , a slurry injection nozzle 103 for injecting slurry supplied from the slurry supply unit, and a flowmeter 102 mounted between the slurry supply unit 101 and the slurry injection nozzle 103 .
- the flowmeter 102 controls the flow of slurry on the assumption that the slurry is fluid.
- Conventional measuring apparatus for slurry flow are generally classified as a contact type apparatus or a non-contact type apparatus according to whether or not the apparatus comes into contact with slurry.
- the representative contact type apparatus is a rotameter, which has a problem in that abrasive particles in the slurry solution may possibly damage mechanical elements of the rotameter, and vice versa (that is, the abrasive particles may also be damaged or abraded by the mechanical elements of the rotameter).
- the resulting contaminated slurry may cause fatal defects such as a scratch on a wafer surface.
- Non-contact type apparatus include a rotameter having an electromagnetic flowmeter, an ultrasonic flowmeter, a heat dissipation flow detector, a Hall effect electro transducer, and so forth.
- these devices are largely inaccurate or do not have fine control capacity. Therefore, they cannot be adapted to a CMP apparatus for fabricating a semiconductor since, in the CMP apparatus, a very small quantity of slurry should be controlled. That is to say, the electromagnetic flowmeter has a practical drawback of having so great a capacity.
- the ultrasonic flowmeter has a drawback of having a precondition that the slurry should be completely charged with electricity so as to operate the flowmeter. This precondition has a marked effect on the accuracy of measurement in a circulation of slurry flow.
- the heat dissipation flow detector has a drawback in that reaction time is delayed about 15 to 25 seconds, which makes it impossible to adapt the detector to a CMP apparatus to be operated in real-time.
- the performance of the Hall effect electro transducer is abruptly changed if a metallic substance exists near the transducer, it may not be adapted to a CMP apparatus around which a metallic substance is dispersed.
- FIG. 1 is a block diagram showing a prior art apparatus for slurry flow control.
- FIG. 2 is a block diagram showing an example apparatus for slurry flow control.
- FIG. 3 illustrates a by-pass of the apparatus of FIG. 2.
- FIG. 3A is a cross-sectional view of the by-pass of FIG. 3 taken along line A-A of FIG. 3.
- FIG. 4 is a flow chart illustrating an example method for slurry flow control.
- FIG. 5 is a block diagram illustrating another example apparatus for slurry flow control.
- FIG. 6 is a flow chart illustrating another example method for slurry flow control.
- FIG. 2 is a block diagram illustrating an example apparatus for slurry flow control.
- the apparatus for slurry flow control comprises a slurry supply unit 201 , a slurry flow control unit 203 , and a slurry measuring unit 202 .
- a photo image sensor 202 a is provided in the slurry measuring unit 202 .
- the slurry supply unit 201 serves to supply the slurry required for a CMP process to a slurry injection nozzle 103 through a slurry supply line 211 .
- the slurry measuring unit 202 is connected with a by-pass 212 diverged from the slurry supply line 211 .
- the slurry measuring unit 202 measures the sizes of particles in the slurry flowing in the by-pass 212 and calculates the density of the slurry.
- the measurement of the particle sizes and the calculation of the slurry density are performed in cooperation with the photo image sensor 202 a in the slurry measuring unit 202 .
- the photo image sensor 202 a detects a generally cross-sectional image of the by-pass in which the slurry flows and displays the sizes of particles on the detected image and the particle density of the slurry solution across the cross-section of the by-pass.
- the slurry flow control unit 203 receives information on the particle sizes and the slurry density obtained by the slurry measuring unit 202 , checks whether or not the received information corresponds to prescribed flow information, and controls the supply flow of the slurry by regulating the slurry supply unit 201 so as to supply slurry in the proper quantity.
- the slurry passing through the by-pass 212 connected to the slurry measuring unit 202 is returned to the slurry supply line 211 after the particle sizes and the density of the slurry are measured.
- Such construction makes it possible to periodically analyze slurry properties, and to control the slurry flow in real-time.
- the amount of particles and the density of the slurry in the by-pass 212 may be decreased in proportion to the amount of supplied diluent solution.
- the amount of particles and the density of the slurry in the slurry supply line 211 should be adjusted and calculated considering the amount of supplied diluent solution. They may be adjusted to be higher in proportion to the amount of supplied diluent solution, and in inverse proportion to the amount of supplied slurry. It is not necessary to control at the same time.
- slurry begins to be supplied from the slurry supply unit 201 through the slurry supply line 211 (S 401 ).
- a certain quantity of slurry is introduced into the by-pass 212 diverged from the slurry supply line 211 (S 402 ).
- a cross-sectional image of the by-pass 212 is obtained (S 403 ).
- the cross-sectional image of the by-pass 212 may be obtained by the photo image sensor 202 a described above.
- the sizes of the particles included in the slurry and the density of the slurry are measured using the cross-sectional image detected by the photo image sensor 202 a (S 404 ).
- the slurry flow control unit 203 controls the slurry supply unit 201 to supply slurry in the proper quantity (S 405 ).
- the apparatus of FIG. 2 comprises the by-pass 212 diverged from the slurry supply line 211 so that particle sizes and the density of the slurry flowing in the by-pass 212 are measured.
- the apparatus of FIG. 2 comprises the by-pass 212 diverged from the slurry supply line 211 so that particle sizes and the density of the slurry flowing in the by-pass 212 are measured.
- the concentration of particles relative to the solution is high, it is possible that an accurate calculation of particle size upon measurement of the cross-sectional image of the by-pass 212 using the photo image sensor 202 a may be difficult.
- FIG. 5 is a block diagram showing an example apparatus to control slurry flow.
- FIG. 6 is a flow chart illustrating an example method for controlling slurry flow.
- the apparatus in addition to the elements of the apparatus of FIG. 2, the apparatus also includes a diluent solution supply unit 204 . More particularly, the example apparatus of FIG. 5 comprises a slurry supply unit 201 , a slurry flow control unit 203 , a slurry measuring unit 202 , and a diluent solution supply unit 204 .
- a photo image sensor 202 a is provided in the slurry measuring unit 202 .
- the slurry supply unit 201 serves to supply the slurry required for a CMP process to a slurry injection nozzle 103 through a slurry supply line 211 .
- the slurry measuring unit 202 is connected with a by-pass 212 diverged from the slurry supply line 211 .
- the slurry measuring unit 202 measures the sizes of the particles in the slurry flowing in the by-pass 212 and calculates the density of the slurry.
- the measurement of the particle size and the calculation of the density are performed in cooperation with the photo image sensor 202 a in the slurry measuring unit 202 . As shown in FIGS.
- the photo image sensor 202 a captures a generally cross-sectional image of the by-pass 212 in which the slurry flows, and displays the sizes of particles in the detected image and the particle density of the slurry solution across the cross-section of the by-pass 212 .
- the measuring unit 202 is connected with the diluent solution supply unit 204 .
- the diluent solution supply unit 204 is a device for supplying pure water or a solution with substantially the same composition as the slurry solution to the slurry in the by-pass 212 .
- the concentration of particles to slurry is reduced by a known amount determined by the amount of diluent solution added, so that the photo image sensor 202 a can accurately measure the cross-sectional image for slurry having a high concentration of particles.
- the slurry flow control unit 203 receives information on the particle sizes and the slurry density obtained by the slurry measuring unit 202 , and controls the supply flow of the slurry by regulating the slurry supply unit 201 so as to supply the slurry in proper quantity.
- the slurry passing through the by-pass 212 can be returned to the slurry supply line 211 after the slurry measuring unit 202 has measured the particle sizes and the density of the slurry.
- slurry begins to be supplied from the slurry supply unit 201 through the slurry supply line 211 (S 601 ).
- a certain quantity of the slurry is introduced into the by-pass 212 diverged from the slurry supply line 211 (S 602 ). Then, the diluent solution is introduced into the by-pass 212 (S 603 ).
- the diluent solution is pure water or a solution with the same composition as slurry solution. The reason for inserting the diluent solution is to improve the accuracy of the cross-sectional image of the by-pass 212 using the photo image sensor 202 a when the particle concentration of the slurry is high.
- a cross-sectional image of the by-pass 212 is captured (S 604 ).
- the cross-sectional image of the by-pass 212 may be obtained, for example, by the photo image sensor 202 a described above.
- the sizes of the particles included in the slurry and the density of the slurry solution are measured using the cross-sectional image detected by the photo image sensor 202 a (S 605 ).
- the slurry in the by-pass 212 is discharged into the slurry supply line 211 so as to be forwarded toward the slurry injection nozzle 103 .
- the slurry flow control unit 203 controls the slurry supply unit 201 to supply slurry in the proper quantity (S 606 ).
- the disclosed apparatus and methods can conduct real-time flow control of slurry fed to an injection nozzle through a slurry supply line by attaching a photo image sensor for detecting a cross-sectional image of the supply line or a bypass of the supply line to one side of the slurry supply line, and by accurately calculating the sizes of the particles included in the slurry and the density of slurry using the detected image.
- the apparatus includes: a slurry supply unit for supplying slurry to a slurry injection nozzle through a slurry supply line; a photo image sensor mounted to one side of a by-pass diverged from the slurry supply line so as to detect a cross-sectional image of the slurry flowing in the by-pass; a slurry measuring unit for analyzing the image captured by the photo image sensor so as to measure the sizes of particles included in the slurry and the density of the slurry; and a slurry flow control unit for controlling the slurry supply unit based upon information on the particle sizes and the slurry density measured by the slurry measuring unit.
- the apparatus includes: a slurry supply unit for supplying slurry to a slurry injection nozzle through a slurry supply line; a photo image sensor mounted to one side of a by-pass diverged from the slurry supply line so as to detect a cross-sectional image of slurry flowing in the by-pass; a slurry measuring unit for analyzing the image so as to measure the sizes of particles included in the slurry and the density of the slurry; a diluent solution supply unit for supplying diluent solution in the by-pass so as to reduce the concentration of particles in the slurry so that the photo image sensor accurately detects the cross-sectional image of the by-pass; and a slurry flow control unit for controlling the slurry supply unit based upon information on the particle sizes and the slurry density measured by the slurry measuring unit.
- the diluent solution is pure water or a solution with the same composition as the slurry solution.
- a method for controlling slurry flow in a chemical mechanical polishing apparatus for planarizing an object to be polished by supplying slurry on a grinding pad through a slurry injection nozzle is performed by: supplying slurry to the slurry injection nozzle through a slurry supply line; introducing slurry in a by-pass diverged from the slurry supply line; detecting a cross-sectional image of the by-pass so as to measure the sizes of particles included in the slurry and the density of the slurry; and controlling the supply of slurry based upon the measured sizes of particles and density of slurry.
- the disclosed method is performed by: supplying slurry to the slurry injection nozzle through a slurry supply line; introducing slurry into a by-pass diverged from the slurry supply line; supplying a diluent solution into the by-pass so as to reduce a concentration of particles of slurry; detecting a cross-sectional image of the by-pass so as to measure the sizes of particles included in the slurry and the density of the slurry; and controlling supply of slurry based upon the measured sizes of particles and density of slurry.
Abstract
Description
- The present disclosure relates generally to chemical mechanical polishing apparatus, and more particularly to apparatus and methods for slurry flow control.
- As generally known in the art, as semiconductor devices have become more highly integrated, the size of the source/drain and the line widths of the gate electrode and the metal interconnect in MOS transistors have been narrowed. Various kinds of new processes have been proposed to produce semiconductor devices with fine line widths. One such process is the chemical mechanical polishing (CMP) process. The CMP process is a method for planarizing a surface of a certain material layer by generating a chemical reaction using slurry and applying a mechanical polishing force. The CMP process advantageously achieves polishing thickness precision and polishing uniformity for the whole substrate. Therefore, the CMP process has recently become an important process to produce a semiconductor device with fine line width.
- The CMP process is performed in such a way that a circuit forming surface of a wafer is pressed against a surface of a polishing pad after a back face of the wafer has been attached to a wafer carrier. The polishing pad is composed of polyurethane or poly tex. The hardness and density of the polishing pad are selected according to the materials constituting the surface to be polished.
- During the CMP process, slurry solution for chemical planarization is injected onto the surface to be polished. Slurry may comprise various kinds of particles and solutions. For example, the particles may include cerium oxide, silica (SiO2), alumina (Al2O3), or manganese oxide. Slurry can be classified according to the kinds of particles it contains. The particles have different shape, density and hardness based on their own compositions. Although the particles have the same compositions with respect to each other, the characteristics thereof can be different due to their preparation methods.
- It is therefore important to accurately control slurry flow in the manner required by the corresponding CMP process. While known measuring apparatus can accurately measure flow of slurry which does not include particles, known measuring apparatus cannot accurately measure slurry which includes particles. Also, as described above, since slurries have various different characteristics based on the particles constituting the slurry, even if one kind of slurry could be measured or controlled, another kind of slurry could not be measured or controlled using the same reference.
- FIG. 1 is a block diagram showing a conventional slurry supply system. The slurry supply system of FIG. 1 comprises a
slurry supply unit 101, aslurry injection nozzle 103 for injecting slurry supplied from the slurry supply unit, and aflowmeter 102 mounted between theslurry supply unit 101 and theslurry injection nozzle 103. Theflowmeter 102 controls the flow of slurry on the assumption that the slurry is fluid. - Conventional measuring apparatus for slurry flow are generally classified as a contact type apparatus or a non-contact type apparatus according to whether or not the apparatus comes into contact with slurry. The representative contact type apparatus is a rotameter, which has a problem in that abrasive particles in the slurry solution may possibly damage mechanical elements of the rotameter, and vice versa (that is, the abrasive particles may also be damaged or abraded by the mechanical elements of the rotameter). The resulting contaminated slurry may cause fatal defects such as a scratch on a wafer surface.
- Non-contact type apparatus include a rotameter having an electromagnetic flowmeter, an ultrasonic flowmeter, a heat dissipation flow detector, a Hall effect electro transducer, and so forth. However, these devices are largely inaccurate or do not have fine control capacity. Therefore, they cannot be adapted to a CMP apparatus for fabricating a semiconductor since, in the CMP apparatus, a very small quantity of slurry should be controlled. That is to say, the electromagnetic flowmeter has a practical drawback of having so great a capacity. The ultrasonic flowmeter has a drawback of having a precondition that the slurry should be completely charged with electricity so as to operate the flowmeter. This precondition has a marked effect on the accuracy of measurement in a circulation of slurry flow. Also, the heat dissipation flow detector has a drawback in that reaction time is delayed about 15 to 25 seconds, which makes it impossible to adapt the detector to a CMP apparatus to be operated in real-time. Finally, since the performance of the Hall effect electro transducer is abruptly changed if a metallic substance exists near the transducer, it may not be adapted to a CMP apparatus around which a metallic substance is dispersed.
- FIG. 1 is a block diagram showing a prior art apparatus for slurry flow control.
- FIG. 2 is a block diagram showing an example apparatus for slurry flow control.
- FIG. 3 illustrates a by-pass of the apparatus of FIG. 2.
- FIG. 3A is a cross-sectional view of the by-pass of FIG. 3 taken along line A-A of FIG. 3.
- FIG. 4 is a flow chart illustrating an example method for slurry flow control.
- FIG. 5 is a block diagram illustrating another example apparatus for slurry flow control.
- FIG. 6 is a flow chart illustrating another example method for slurry flow control.
- FIG. 2 is a block diagram illustrating an example apparatus for slurry flow control. In the example of FIG. 2, the apparatus for slurry flow control comprises a
slurry supply unit 201, a slurryflow control unit 203, and aslurry measuring unit 202. Aphoto image sensor 202 a is provided in theslurry measuring unit 202. - The
slurry supply unit 201 serves to supply the slurry required for a CMP process to aslurry injection nozzle 103 through aslurry supply line 211. - The
slurry measuring unit 202 is connected with a by-pass 212 diverged from theslurry supply line 211. Theslurry measuring unit 202 measures the sizes of particles in the slurry flowing in the by-pass 212 and calculates the density of the slurry. The measurement of the particle sizes and the calculation of the slurry density are performed in cooperation with thephoto image sensor 202 a in theslurry measuring unit 202. As shown in FIGS. 3 and 3A, thephoto image sensor 202 a detects a generally cross-sectional image of the by-pass in which the slurry flows and displays the sizes of particles on the detected image and the particle density of the slurry solution across the cross-section of the by-pass. - The slurry
flow control unit 203 receives information on the particle sizes and the slurry density obtained by theslurry measuring unit 202, checks whether or not the received information corresponds to prescribed flow information, and controls the supply flow of the slurry by regulating theslurry supply unit 201 so as to supply slurry in the proper quantity. - Meanwhile, the slurry passing through the by-
pass 212 connected to theslurry measuring unit 202 is returned to theslurry supply line 211 after the particle sizes and the density of the slurry are measured. Such construction makes it possible to periodically analyze slurry properties, and to control the slurry flow in real-time. - If diluent solution is supplied in the by-
pass 212, the amount of particles and the density of the slurry in the by-pass 212 may be decreased in proportion to the amount of supplied diluent solution. Thus, the amount of particles and the density of the slurry in theslurry supply line 211 should be adjusted and calculated considering the amount of supplied diluent solution. They may be adjusted to be higher in proportion to the amount of supplied diluent solution, and in inverse proportion to the amount of supplied slurry. It is not necessary to control at the same time. - A method to control slurry flow with the apparatus of FIG. 2 will be now described. As shown in FIG. 4, slurry begins to be supplied from the
slurry supply unit 201 through the slurry supply line 211 (S401). - A certain quantity of slurry is introduced into the by-
pass 212 diverged from the slurry supply line 211 (S402). A cross-sectional image of the by-pass 212 is obtained (S403). For example, the cross-sectional image of the by-pass 212 may be obtained by thephoto image sensor 202 a described above. The sizes of the particles included in the slurry and the density of the slurry are measured using the cross-sectional image detected by thephoto image sensor 202 a (S404). - Information on the measured particle sizes and the density of the slurry solution is transmitted to the slurry
flow control unit 203. The slurryflow control unit 203 controls theslurry supply unit 201 to supply slurry in the proper quantity (S405). - The apparatus of FIG. 2 comprises the by-
pass 212 diverged from theslurry supply line 211 so that particle sizes and the density of the slurry flowing in the by-pass 212 are measured. However, if so many particles are contained in the slurry, that is, the concentration of particles relative to the solution is high, it is possible that an accurate calculation of particle size upon measurement of the cross-sectional image of the by-pass 212 using thephoto image sensor 202 a may be difficult. - In order to solve this problem, a second example apparatus and example method for slurry flow control will now be described. In the following examples, the cross-sectional image can be accurately measured, even when the slurry contains a high concentration of particles.
- FIG. 5 is a block diagram showing an example apparatus to control slurry flow. FIG. 6 is a flow chart illustrating an example method for controlling slurry flow.
- In the example of FIG. 5, in addition to the elements of the apparatus of FIG. 2, the apparatus also includes a diluent
solution supply unit 204. More particularly, the example apparatus of FIG. 5 comprises aslurry supply unit 201, a slurryflow control unit 203, aslurry measuring unit 202, and a diluentsolution supply unit 204. Aphoto image sensor 202 a is provided in theslurry measuring unit 202. As with the apparatus of FIG. 2, theslurry supply unit 201 serves to supply the slurry required for a CMP process to aslurry injection nozzle 103 through aslurry supply line 211. - As in the example of FIG. 2, in the example of FIG. 5, the
slurry measuring unit 202 is connected with a by-pass 212 diverged from theslurry supply line 211. Theslurry measuring unit 202 measures the sizes of the particles in the slurry flowing in the by-pass 212 and calculates the density of the slurry. The measurement of the particle size and the calculation of the density are performed in cooperation with thephoto image sensor 202 a in theslurry measuring unit 202. As shown in FIGS. 3 and 3A, thephoto image sensor 202 a captures a generally cross-sectional image of the by-pass 212 in which the slurry flows, and displays the sizes of particles in the detected image and the particle density of the slurry solution across the cross-section of the by-pass 212. - The
measuring unit 202 is connected with the diluentsolution supply unit 204. The diluentsolution supply unit 204 is a device for supplying pure water or a solution with substantially the same composition as the slurry solution to the slurry in the by-pass 212. As the diluent solution is supplied from the diluentsolution supply unit 204 to the slurry in the by-pass 212, the concentration of particles to slurry is reduced by a known amount determined by the amount of diluent solution added, so that thephoto image sensor 202 a can accurately measure the cross-sectional image for slurry having a high concentration of particles. - The slurry
flow control unit 203 receives information on the particle sizes and the slurry density obtained by theslurry measuring unit 202, and controls the supply flow of the slurry by regulating theslurry supply unit 201 so as to supply the slurry in proper quantity. - As described in connection with the example of FIG. 2, the slurry passing through the by-
pass 212 can be returned to theslurry supply line 211 after theslurry measuring unit 202 has measured the particle sizes and the density of the slurry. - An example method to control slurry flow will be now described. In the example of FIG. 6, slurry begins to be supplied from the
slurry supply unit 201 through the slurry supply line 211 (S601). - A certain quantity of the slurry is introduced into the by-
pass 212 diverged from the slurry supply line 211 (S602). Then, the diluent solution is introduced into the by-pass 212 (S603). Preferably, the diluent solution is pure water or a solution with the same composition as slurry solution. The reason for inserting the diluent solution is to improve the accuracy of the cross-sectional image of the by-pass 212 using thephoto image sensor 202 a when the particle concentration of the slurry is high. - After the diluent solution has been introduced to the slurry flowing in the by-
pass 212, a cross-sectional image of the by-pass 212 is captured (S604). The cross-sectional image of the by-pass 212 may be obtained, for example, by thephoto image sensor 202 a described above. The sizes of the particles included in the slurry and the density of the slurry solution are measured using the cross-sectional image detected by thephoto image sensor 202 a (S605). - After measuring the particle size and calculating the slurry density, the slurry in the by-
pass 212 is discharged into theslurry supply line 211 so as to be forwarded toward theslurry injection nozzle 103. - Meanwhile, information on the measured particle sizes and the density of the slurry solution is transmitted to the slurry
flow control unit 203. The slurryflow control unit 203 controls theslurry supply unit 201 to supply slurry in the proper quantity (S606). - The disclosed apparatus and methods can conduct real-time flow control of slurry fed to an injection nozzle through a slurry supply line by attaching a photo image sensor for detecting a cross-sectional image of the supply line or a bypass of the supply line to one side of the slurry supply line, and by accurately calculating the sizes of the particles included in the slurry and the density of slurry using the detected image.
- From the foregoing, persons of ordinary skill in the art will appreciate that an apparatus has been provided for controlling slurry flow in a chemical mechanical polishing apparatus for planarizing an object to be polished by supplying certain slurry on a grinding pad through a slurry injection nozzle. The apparatus includes: a slurry supply unit for supplying slurry to a slurry injection nozzle through a slurry supply line; a photo image sensor mounted to one side of a by-pass diverged from the slurry supply line so as to detect a cross-sectional image of the slurry flowing in the by-pass; a slurry measuring unit for analyzing the image captured by the photo image sensor so as to measure the sizes of particles included in the slurry and the density of the slurry; and a slurry flow control unit for controlling the slurry supply unit based upon information on the particle sizes and the slurry density measured by the slurry measuring unit.
- Persons of ordinary skill in the art will further appreciate that an apparatus has been provided for controlling slurry flow in a chemical mechanical polishing apparatus for planarizing an object to be polished by supplying certain slurry on a grinding pad through a slurry injection nozzle. The apparatus includes: a slurry supply unit for supplying slurry to a slurry injection nozzle through a slurry supply line; a photo image sensor mounted to one side of a by-pass diverged from the slurry supply line so as to detect a cross-sectional image of slurry flowing in the by-pass; a slurry measuring unit for analyzing the image so as to measure the sizes of particles included in the slurry and the density of the slurry; a diluent solution supply unit for supplying diluent solution in the by-pass so as to reduce the concentration of particles in the slurry so that the photo image sensor accurately detects the cross-sectional image of the by-pass; and a slurry flow control unit for controlling the slurry supply unit based upon information on the particle sizes and the slurry density measured by the slurry measuring unit.
- Preferably, the diluent solution is pure water or a solution with the same composition as the slurry solution.
- Persons of ordinary skill in the art will further appreciate that a method has been provided for controlling slurry flow in a chemical mechanical polishing apparatus for planarizing an object to be polished by supplying slurry on a grinding pad through a slurry injection nozzle. The disclosed method is performed by: supplying slurry to the slurry injection nozzle through a slurry supply line; introducing slurry in a by-pass diverged from the slurry supply line; detecting a cross-sectional image of the by-pass so as to measure the sizes of particles included in the slurry and the density of the slurry; and controlling the supply of slurry based upon the measured sizes of particles and density of slurry.
- Persons of ordinary skill in the art will further appreciate that a method has been provided for controlling slurry flow in a chemical mechanical polishing apparatus for planarizing an object to be polished by supplying slurry on a grinding pad through a slurry injection nozzle. The disclosed method is performed by: supplying slurry to the slurry injection nozzle through a slurry supply line; introducing slurry into a by-pass diverged from the slurry supply line; supplying a diluent solution into the by-pass so as to reduce a concentration of particles of slurry; detecting a cross-sectional image of the by-pass so as to measure the sizes of particles included in the slurry and the density of the slurry; and controlling supply of slurry based upon the measured sizes of particles and density of slurry.
- Although certain example methods and apparatus have been described herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers all methods, apparatus and articles of manufacture fairly falling within the scope of the appended claims either literally or under the doctrine of equivalents.
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KR1020020086887A KR100570371B1 (en) | 2002-12-30 | 2002-12-30 | Apparatus and system of slurry flow control |
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Cited By (3)
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US20110237161A1 (en) * | 2006-11-30 | 2011-09-29 | Advanced Micro Devices, Inc. | Method and system for controlling chemical mechanical polishing by controllably moving a slurry outlet |
US20160045999A1 (en) * | 2014-08-13 | 2016-02-18 | Lg Siltron Incorporated | Slurry supply device and polishing apparatus including the same |
CN113579991A (en) * | 2021-09-27 | 2021-11-02 | 西安奕斯伟硅片技术有限公司 | Final polishing method and system for silicon wafer and silicon wafer |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101126502B1 (en) * | 2009-10-19 | 2012-03-29 | 주식회사 케이씨텍 | Filtering apparatus |
JP6108225B2 (en) * | 2012-07-27 | 2017-04-05 | 新東工業株式会社 | Slurry concentration measuring apparatus and slurry concentration measuring method using the apparatus |
KR101971150B1 (en) * | 2017-08-18 | 2019-04-22 | 에스케이실트론 주식회사 | Edge polishing unit of wafer, edge polishing apparatus and method of wafer including the same |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3596839A (en) * | 1969-12-10 | 1971-08-03 | Westinghouse Electric Corp | Slurry particle size determination |
US4529306A (en) * | 1983-06-13 | 1985-07-16 | Flow Vision, Inc. | Apparatus and method for polymer melt stream analysis |
US4669230A (en) * | 1986-01-03 | 1987-06-02 | Fuji Seiki Machine Works, Ltd. | Wet blasting machine with automatic control system for slurry concentration |
US4784295A (en) * | 1987-02-17 | 1988-11-15 | Magnetic Peripherals Inc. | Slurry dispensing system having self-purging capabilities |
US5191388A (en) * | 1991-12-18 | 1993-03-02 | Flow Vision, Inc. | Apparatus for detecting and analyzing particulate matter in a slurry flow |
US5561520A (en) * | 1993-02-26 | 1996-10-01 | British Nuclear Fuels Plc | Measuring properties of a slurry |
US5710069A (en) * | 1996-08-26 | 1998-01-20 | Motorola, Inc. | Measuring slurry particle size during substrate polishing |
US6048256A (en) * | 1999-04-06 | 2000-04-11 | Lucent Technologies Inc. | Apparatus and method for continuous delivery and conditioning of a polishing slurry |
US6275290B1 (en) * | 1998-04-29 | 2001-08-14 | Particle Measuring Systems, Inc. | Chemical mechanical planarization (CMP) slurry quality control process and particle size distribution measuring systems |
US6319099B1 (en) * | 1998-11-24 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
US6347976B1 (en) * | 1999-11-30 | 2002-02-19 | The Boeing Company | Coating removal system having a solid particle nozzle with a detector for detecting particle flow and associated method |
US20020061722A1 (en) * | 2000-11-17 | 2002-05-23 | Kaoru Kondo | Apparatus for producing polishing solution and apparatus for feeding the same |
US6410441B1 (en) * | 1999-12-13 | 2002-06-25 | Worldwide Semiconductor Manufacturing Corp. | Auto slurry deliver fine-tune system for chemical-mechanical-polishing process and method of using the system |
US6544109B1 (en) * | 2000-08-31 | 2003-04-08 | Micron Technology, Inc. | Slurry delivery and planarization systems |
US6595829B1 (en) * | 1999-02-09 | 2003-07-22 | Stragbaugh | Slurry pump control system |
US20030174306A1 (en) * | 2002-03-13 | 2003-09-18 | Grant Donald C. | Dilution apparatus and method of diluting a liquid sample |
-
2002
- 2002-12-30 KR KR1020020086887A patent/KR100570371B1/en not_active IP Right Cessation
-
2003
- 2003-10-01 US US10/676,643 patent/US20040127143A1/en not_active Abandoned
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3596839A (en) * | 1969-12-10 | 1971-08-03 | Westinghouse Electric Corp | Slurry particle size determination |
US4529306A (en) * | 1983-06-13 | 1985-07-16 | Flow Vision, Inc. | Apparatus and method for polymer melt stream analysis |
US4669230A (en) * | 1986-01-03 | 1987-06-02 | Fuji Seiki Machine Works, Ltd. | Wet blasting machine with automatic control system for slurry concentration |
US4784295A (en) * | 1987-02-17 | 1988-11-15 | Magnetic Peripherals Inc. | Slurry dispensing system having self-purging capabilities |
US5191388A (en) * | 1991-12-18 | 1993-03-02 | Flow Vision, Inc. | Apparatus for detecting and analyzing particulate matter in a slurry flow |
US5561520A (en) * | 1993-02-26 | 1996-10-01 | British Nuclear Fuels Plc | Measuring properties of a slurry |
US5710069A (en) * | 1996-08-26 | 1998-01-20 | Motorola, Inc. | Measuring slurry particle size during substrate polishing |
US6275290B1 (en) * | 1998-04-29 | 2001-08-14 | Particle Measuring Systems, Inc. | Chemical mechanical planarization (CMP) slurry quality control process and particle size distribution measuring systems |
US6319099B1 (en) * | 1998-11-24 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for feeding slurry |
US6595829B1 (en) * | 1999-02-09 | 2003-07-22 | Stragbaugh | Slurry pump control system |
US6048256A (en) * | 1999-04-06 | 2000-04-11 | Lucent Technologies Inc. | Apparatus and method for continuous delivery and conditioning of a polishing slurry |
US6347976B1 (en) * | 1999-11-30 | 2002-02-19 | The Boeing Company | Coating removal system having a solid particle nozzle with a detector for detecting particle flow and associated method |
US6410441B1 (en) * | 1999-12-13 | 2002-06-25 | Worldwide Semiconductor Manufacturing Corp. | Auto slurry deliver fine-tune system for chemical-mechanical-polishing process and method of using the system |
US6544109B1 (en) * | 2000-08-31 | 2003-04-08 | Micron Technology, Inc. | Slurry delivery and planarization systems |
US20020061722A1 (en) * | 2000-11-17 | 2002-05-23 | Kaoru Kondo | Apparatus for producing polishing solution and apparatus for feeding the same |
US20030174306A1 (en) * | 2002-03-13 | 2003-09-18 | Grant Donald C. | Dilution apparatus and method of diluting a liquid sample |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110237161A1 (en) * | 2006-11-30 | 2011-09-29 | Advanced Micro Devices, Inc. | Method and system for controlling chemical mechanical polishing by controllably moving a slurry outlet |
US8622783B2 (en) * | 2006-11-30 | 2014-01-07 | Advanced Micro Devices, Inc. | Method and system for controlling chemical mechanical polishing by controllably moving a slurry outlet |
US20160045999A1 (en) * | 2014-08-13 | 2016-02-18 | Lg Siltron Incorporated | Slurry supply device and polishing apparatus including the same |
US9358666B2 (en) * | 2014-08-13 | 2016-06-07 | Lg Siltron Incorporated | Slurry supply device and polishing apparatus including the same |
CN113579991A (en) * | 2021-09-27 | 2021-11-02 | 西安奕斯伟硅片技术有限公司 | Final polishing method and system for silicon wafer and silicon wafer |
Also Published As
Publication number | Publication date |
---|---|
KR20040061106A (en) | 2004-07-07 |
KR100570371B1 (en) | 2006-04-11 |
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