US20040003775A1 - Shadow mask for fabricating flat display - Google Patents

Shadow mask for fabricating flat display Download PDF

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Publication number
US20040003775A1
US20040003775A1 US10/609,400 US60940003A US2004003775A1 US 20040003775 A1 US20040003775 A1 US 20040003775A1 US 60940003 A US60940003 A US 60940003A US 2004003775 A1 US2004003775 A1 US 2004003775A1
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United States
Prior art keywords
substrate
shadow mask
via holes
via hole
thickness
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/609,400
Inventor
Chang Kim
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LG Electronics Inc
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LG Electronics Inc
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Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Assigned to LG ELECTRONICS INC. reassignment LG ELECTRONICS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, CHANG NAM
Publication of US20040003775A1 publication Critical patent/US20040003775A1/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks

Definitions

  • the present invention relates to a shadow mask for fabricating a flat display.
  • the shadow mask is used in fabricating a full color flat display for forming R, G, B pixels each having good color feeling, and luminous efficiency.
  • the shadow mask used in fabrication of the flat display is provided with a substrate 1 , and a plurality of via holes 2 in the substrate 1 .
  • the shadow mask may be formed by wet-etching, or electro-forming.
  • FIGS. 2A and 2B illustrate shadow masks each formed by wet-etching
  • FIGS. 3A and 3B illustrate shadow masks each formed by electro-forming.
  • the shadow mask formed by wet-etching has via holes each having a top part size different a bottom part size. That is, the via hole has a sloped sidewall.
  • the shadow mask formed by wet-etching has a great distance between adjacent via holes, which is not suitable for fabrication of a display panel that requires a high precision.
  • the shadow mask formed by the electro-forming has via holes each with equal top and bottom part size. That is, the via hole has a vertical sidewall.
  • the shadow mask formed by electro-forming causes to have a shadow phenomenon depending on positions of deposition sources when a material is deposited on a display panel by using the shadow mask.
  • the shadow phenomenon causes failure in accurate deposition of the material on a desired position of the display panel, which results in non-uniform light emission from the pixel.
  • the present invention is directed to a shadow mask that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
  • An object of the present invention is to provide a shadow mask suitable for fabrication of a display that requires a high precision.
  • Another object of the present invention is to provide a shadow mask having no show phenomenon and a high reliability.
  • the shadow mask for fabricating a flat display includes a first substrate having a plurality of first via holes, a second substrate on the first substrate, the second substrate having a plurality of second via holes, wherein the first via holes and the second via holes are arranged to overlap with each other, and the second via hole has a diameter greater than a diameter of the first via hole.
  • the second substrate may have a thickness thicker than a thickness of the first substrate.
  • a plurality of the first via holes are arranged on every column, and one second via hole is arranged on every column.
  • the first and second via holes have a form selected from a circle, a polygon, and stripe.
  • the shadow mask as further includes a bridge formed on the first substrate between adjacent first via holes.
  • the bridge has a thickness the same with the thickness of the second substrate, and the bridge is formed across the second via hole.
  • a shadow mask for fabricating a flat display including a first substrate having a plurality of first via holes, a second substrate on the first substrate, the second substrate having a plurality of second via holes, a third substrate on the second substrate, the third substrate having a plurality of third via holes, wherein the first, second, and third via holes are arranged to overlap with one another, the second via hole has a diameter greater than a diameter of the first via hole, and the third via hole has a diameter greater than the diameter of the second via hole.
  • a plurality of the first via holes are arranged on every column, and one second or third via hole is arranged on every column.
  • FIGS. 1A and 1B illustrate a plan view and a section each showing a related art shadow mask, respectively;
  • FIGS. 2A and 2B illustrate related art shadow masks each formed by wet-etching, respectively;
  • FIGS. 3A and 3B illustrate related art shadow masks each formed by electro-forming, respectively;
  • FIGS. 4A and 4B illustrate a plan view and a section each showing a shadow mask in accordance with a preferred embodiment of the present invention, respectively;
  • FIG. 5A illustrates a via hole of a shadow mask in accordance with a preferred embodiment of the present invention
  • FIG. 5B illustrates a bridge formed between adjacent via holes
  • FIGS. 6A and 6B illustrate thicknesses of shadow masks, and widths of via holes
  • FIGS. 7A and 7B illustrate deposition of a material with a shadow mask of the present invention.
  • FIGS. 4A and 4B illustrate a plan view and a section each showing a shadow mask in accordance with a preferred embodiment of the present invention, respectively.
  • the shadow mask includes a first substrate 50 , a plurality of first via holes 51 in the first substrate 50 , a second substrate 52 on the first substrate 50 , and a plurality of second via holes 53 in the second substrate 52 .
  • the first via hole 51 is rectangular, and a plurality of the first via holes 51 are formed in every column.
  • the second via hole 53 has a form of a stripe formed per every column overlapped with the first via holes 51 .
  • the first, and second via holes 51 and 53 may be formed in a variety of forms, such as circles, polygons, and stripes.
  • a bridge 54 may be formed on the first substrate 50 between adjacent first via holes 51 additionally, for preventing sagging of the shadow mask.
  • the bridge is formed to have a thickness the same with the second substrate 52 across the second via hole 53 .
  • a thickness ‘b’ of the second substrate 52 is thicker than a thickness ‘a’ of the first substrate 50 . That is, the first substrate 50 is approx. 1-100 ⁇ m thick, and the second substrate 52 is approx. 5-1000 ⁇ m thick. The first via hole 51 and the second via hole 53 have approx. a 1-1000 ⁇ m diametric difference ‘d’.
  • a third substrate 55 having a plurality of third via holes can be formed on the second substrate 52 additionally.
  • the third via holes are arranged so as to overlap with the second via hole 53 , each with a diameter greater than the diameter of the second via hole 53 .
  • FIGS. 7A and 7B illustrate deposition of a material with a shadow mask of the present invention.
  • the material when a material is deposited on a display panel with the shadow mask of the present invention, the material can be deposited on an accurate pixel position without the shadow phenomenon.

Abstract

Shadow mask for fabricating a flat display including a first substrate having a plurality of first via holes, and a second substrate on the first substrate, the second substrate having a plurality of second via holes, wherein the first via holes and the second via holes are arranged to overlap with each other, and the second via hole has a diameter greater than a diameter of the first via hole.

Description

  • This application claims the benefit of the Korean Application No. P2002-38347 filed on Jul. 3, 2002, which is hereby incorporated by reference. [0001]
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • The present invention relates to a shadow mask for fabricating a flat display. [0003]
  • 2. Background of the Related Art [0004]
  • In general, the shadow mask is used in fabricating a full color flat display for forming R, G, B pixels each having good color feeling, and luminous efficiency. [0005]
  • Referring to FIGS. 1A and 1B, the shadow mask used in fabrication of the flat display is provided with a substrate [0006] 1, and a plurality of via holes 2 in the substrate 1. The shadow mask may be formed by wet-etching, or electro-forming.
  • FIGS. 2A and 2B illustrate shadow masks each formed by wet-etching, and FIGS. 3A and 3B illustrate shadow masks each formed by electro-forming. [0007]
  • Referring to FIGS. 2A and 2B, the shadow mask formed by wet-etching has via holes each having a top part size different a bottom part size. That is, the via hole has a sloped sidewall. [0008]
  • However, the shadow mask formed by wet-etching has a great distance between adjacent via holes, which is not suitable for fabrication of a display panel that requires a high precision. [0009]
  • In the meantime, referring to FIGS. 3A and 3B, the shadow mask formed by the electro-forming has via holes each with equal top and bottom part size. That is, the via hole has a vertical sidewall. [0010]
  • However, the shadow mask formed by electro-forming causes to have a shadow phenomenon depending on positions of deposition sources when a material is deposited on a display panel by using the shadow mask. [0011]
  • Referring to FIG. 3B, the shadow phenomenon causes failure in accurate deposition of the material on a desired position of the display panel, which results in non-uniform light emission from the pixel. [0012]
  • SUMMARY OF THE INVENTION
  • Accordingly, the present invention is directed to a shadow mask that substantially obviates one or more of the problems due to limitations and disadvantages of the related art. [0013]
  • An object of the present invention is to provide a shadow mask suitable for fabrication of a display that requires a high precision. [0014]
  • Another object of the present invention is to provide a shadow mask having no show phenomenon and a high reliability. [0015]
  • Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. [0016]
  • To achieve these objects and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, the shadow mask for fabricating a flat display includes a first substrate having a plurality of first via holes, a second substrate on the first substrate, the second substrate having a plurality of second via holes, wherein the first via holes and the second via holes are arranged to overlap with each other, and the second via hole has a diameter greater than a diameter of the first via hole. [0017]
  • The second substrate may have a thickness thicker than a thickness of the first substrate. [0018]
  • A plurality of the first via holes are arranged on every column, and one second via hole is arranged on every column. [0019]
  • The first and second via holes have a form selected from a circle, a polygon, and stripe. [0020]
  • The shadow mask as further includes a bridge formed on the first substrate between adjacent first via holes. [0021]
  • The bridge has a thickness the same with the thickness of the second substrate, and the bridge is formed across the second via hole. [0022]
  • In another aspect of the present invention, there is provided a shadow mask for fabricating a flat display including a first substrate having a plurality of first via holes, a second substrate on the first substrate, the second substrate having a plurality of second via holes, a third substrate on the second substrate, the third substrate having a plurality of third via holes, wherein the first, second, and third via holes are arranged to overlap with one another, the second via hole has a diameter greater than a diameter of the first via hole, and the third via hole has a diameter greater than the diameter of the second via hole. [0023]
  • The second substrate may have a thickness thicker than a thickness of the first or third substrate. [0024]
  • A plurality of the first via holes are arranged on every column, and one second or third via hole is arranged on every column. [0025]
  • It is to be understood that both the foregoing description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention claimed. [0026]
  • BRIEF DESCRITPION OF THE DRAWINGS
  • The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principle of the invention. In the drawings; [0027]
  • FIGS. 1A and 1B illustrate a plan view and a section each showing a related art shadow mask, respectively; [0028]
  • FIGS. 2A and 2B illustrate related art shadow masks each formed by wet-etching, respectively; [0029]
  • FIGS. 3A and 3B illustrate related art shadow masks each formed by electro-forming, respectively; [0030]
  • FIGS. 4A and 4B illustrate a plan view and a section each showing a shadow mask in accordance with a preferred embodiment of the present invention, respectively; [0031]
  • FIG. 5A illustrates a via hole of a shadow mask in accordance with a preferred embodiment of the present invention; [0032]
  • FIG. 5B illustrates a bridge formed between adjacent via holes; [0033]
  • FIGS. 6A and 6B illustrate thicknesses of shadow masks, and widths of via holes; and [0034]
  • FIGS. 7A and 7B illustrate deposition of a material with a shadow mask of the present invention.[0035]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. FIGS. 4A and 4B illustrate a plan view and a section each showing a shadow mask in accordance with a preferred embodiment of the present invention, respectively. [0036]
  • Referring to FIGS. 4A and 4B, the shadow mask includes a [0037] first substrate 50, a plurality of first via holes 51 in the first substrate 50, a second substrate 52 on the first substrate 50, and a plurality of second via holes 53 in the second substrate 52.
  • The first via [0038] holes 51 and the second via holes 53 are arranged, so as to overlap with each other, and a diameter of each of the second via holes 53 is formed to be greater than a diameter of each of the first via holes 51.
  • The first via [0039] hole 51 is rectangular, and a plurality of the first via holes 51 are formed in every column. The second via hole 53 has a form of a stripe formed per every column overlapped with the first via holes 51.
  • The first, and second via [0040] holes 51 and 53 may be formed in a variety of forms, such as circles, polygons, and stripes.
  • Referring to FIG. 5B, a [0041] bridge 54 may be formed on the first substrate 50 between adjacent first via holes 51 additionally, for preventing sagging of the shadow mask. The bridge is formed to have a thickness the same with the second substrate 52 across the second via hole 53.
  • Referring to FIG. 6A, a thickness ‘b’ of the [0042] second substrate 52 is thicker than a thickness ‘a’ of the first substrate 50. That is, the first substrate 50 is approx. 1-100 μm thick, and the second substrate 52 is approx. 5-1000 μm thick. The first via hole 51 and the second via hole 53 have approx. a 1-1000 μm diametric difference ‘d’.
  • As another embodiment shadow mask of the present invention, a [0043] third substrate 55 having a plurality of third via holes can be formed on the second substrate 52 additionally.
  • In this instance, the third via holes are arranged so as to overlap with the second via [0044] hole 53, each with a diameter greater than the diameter of the second via hole 53.
  • Referring to FIG. 6B, the [0045] third substrate 55 has a thickness ‘c’ thinner than the thickness ‘b’ of the second substrate 52. That is, the thickness ‘c’ of the third substrate 55 is approx. 1-100 μm. The diametric difference ‘d’ between the first and second via holes, or a diametric difference ‘e’ between the second and third via holes is approx. 1-1000 μm. A plurality of first via holes are arranged on every column, and one second, or third via hole is arranged on every column.
  • FIGS. 7A and 7B illustrate deposition of a material with a shadow mask of the present invention. [0046]
  • Referring to FIGS. 7A and 7B, when a material is deposited on a display panel with the shadow mask of the present invention, the material can be deposited on an accurate pixel position without the shadow phenomenon. [0047]
  • The shadow mask of the present invention provides a high process reliability as the shadow phenomenon is eliminated, permitting to overcome a drawback of the shadow mask formed by electro-forming. The present invention, employing the electro-forming, is suitable for fabrication of a display that requires a high precision. [0048]
  • It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents. [0049]

Claims (18)

What is claimed is:
1. A shadow mask for fabricating a flat display, comprising:
a first substrate having a plurality of first via holes;
a second substrate on the first substrate, the second substrate having a plurality of second via holes;
wherein the first via holes and the second via holes are arranged to overlap with each other, and the second via hole has a diameter greater than a diameter of the first via hole.
2. The shadow mask as claimed in claim 1, wherein the second substrate has a thickness thicker than a thickness of the first substrate.
3. The shadow mask as claimed in claim 2, wherein the first substrate is 1-100 μm thick, and the second substrate is 5-1000 μm thick.
4. The shadow mask as claimed in claim 1, wherein the first via hole and the second via hole have a 1-1000 μm diametric difference.
5. The shadow mask as claimed in claim 1, wherein a plurality of the first via holes are arranged on every column, and one second via hole is arranged on every column.
6. The shadow mask as claimed in claim 5, wherein the first and second via holes have a form selected from a circle, a polygon, and stripe.
7. The shadow mask as claimed in claim 1, further comprising a bridge formed on the first substrate between adjacent first via holes.
8. The shadow mask as claimed in claim 7, wherein the bridge has a thickness the same with the thickness of the second substrate.
9. The shadow mask as claimed in claim 7, wherein the bridge is formed across the second via hole.
10. A shadow mask for fabricating a flat display, comprising:
a first substrate having a plurality of first via holes;
a second substrate on the first substrate, the second substrate having a plurality of second via holes;
a third substrate on the second substrate, the third substrate having a plurality of third via holes;
wherein the first, second, and third via holes are arranged to overlap with one another, the second via hole has a diameter greater than a diameter of the first via hole, and the third via hole has a diameter greater than the diameter of the second via hole.
11. The shadow mask as claimed in claim 10, wherein the second substrate has a thickness thicker than a thickness of the first or third substrate.
12. The shadow mask as claimed in claim 11, wherein the first or third substrate is 1-1000 μm thick, and the second substrate is 5-1000 μm thick.
13. The shadow mask as claimed in claim 10, wherein the first via hole and the second via hole, or the second via hole and the third via hole, have a 1-1000 μm diametric difference.
14. The shadow mask as claimed in claim 10, wherein a plurality of the first via holes are arranged on every column, and one second or third via hole is arranged on every column.
15. The shadow mask as claimed in claim 14, wherein the first, second, and third via holes have forms selected from a circle, a polygon, and stripe.
16. The shadow mask as claimed in claim 10, further comprising a bridge formed on the first substrate between adjacent first via holes.
17. The shadow mask as claimed in claim 16, wherein the bridge has a thickness the same with the thickness of the second substrate.
18. The shadow mask as claimed in claim 16, wherein the bridge is formed across the second via hole.
US10/609,400 2002-07-03 2003-07-01 Shadow mask for fabricating flat display Abandoned US20040003775A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0038347A KR100480705B1 (en) 2002-07-03 2002-07-03 shadow mask for fabricating organic electroluminescence device and fabrication method of the same
KRP2002-38347 2002-07-03

Publications (1)

Publication Number Publication Date
US20040003775A1 true US20040003775A1 (en) 2004-01-08

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US (1) US20040003775A1 (en)
EP (1) EP1378933B1 (en)
JP (1) JP2004036001A (en)
KR (1) KR100480705B1 (en)
CN (1) CN1255844C (en)
DE (1) DE60334052D1 (en)

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US20060141763A1 (en) * 2004-12-23 2006-06-29 Advantech Global, Ltd System for and method of planarizing the contact region of a via by use of a continuous inline vacuum deposition
US20060141761A1 (en) * 2004-12-23 2006-06-29 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US20060148241A1 (en) * 2004-12-30 2006-07-06 Advantech Global, Ltd System for and method of forming via holes by use of selective plasma etching in a continuous inline shadow mask deposition process
US20150011033A1 (en) * 2013-07-08 2015-01-08 Samsung Display Co., Ltd. Mask assembly and method of fabricating organic light emitting display device using the same
US20150376765A1 (en) * 2014-06-30 2015-12-31 Shanghai Tianma AM-OLED Co., Ltd. Mask, method for manufacturing the same and process device
WO2016061215A1 (en) * 2014-10-17 2016-04-21 Advantech Global, Ltd Multi-mask alignment system and method
US10173240B2 (en) 2013-12-13 2019-01-08 V Technology Co., Ltd. Mask and method for manufacturing the same
US10355209B2 (en) 2013-11-14 2019-07-16 Dai Nippon Printing Co., Ltd. Vapor deposition mask, frame-equipped vapor deposition mask, and method for producing organic semiconductor element

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TWI526562B (en) * 2012-01-12 2016-03-21 Dainippon Printing Co Ltd A manufacturing method of a vapor deposition mask, and a method of manufacturing an organic semiconductor device
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DE102014116076A1 (en) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Method for applying a material to a surface
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US20040020435A1 (en) * 2001-08-24 2004-02-05 Terunoa Tsuchiya Multi-face forming mask device for vacuum deposition
US6890385B2 (en) * 2001-08-24 2005-05-10 Dai Nippon Printing Co., Ltd. Multi-face forming mask device for vacuum deposition
US6589382B2 (en) * 2001-11-26 2003-07-08 Eastman Kodak Company Aligning mask segments to provide a stitched mask for producing OLED devices
US20030150384A1 (en) * 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication

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US20040020435A1 (en) * 2001-08-24 2004-02-05 Terunoa Tsuchiya Multi-face forming mask device for vacuum deposition
US6890385B2 (en) * 2001-08-24 2005-05-10 Dai Nippon Printing Co., Ltd. Multi-face forming mask device for vacuum deposition
US20060141763A1 (en) * 2004-12-23 2006-06-29 Advantech Global, Ltd System for and method of planarizing the contact region of a via by use of a continuous inline vacuum deposition
US20060141761A1 (en) * 2004-12-23 2006-06-29 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US7132361B2 (en) * 2004-12-23 2006-11-07 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US20070051311A1 (en) * 2004-12-23 2007-03-08 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US7361585B2 (en) 2004-12-23 2008-04-22 Advantech Global, Ltd System for and method of planarizing the contact region of a via by use of a continuous inline vacuum deposition
US20080190659A1 (en) * 2004-12-23 2008-08-14 Advantech Global, Ltd System For And Method Of Planarizing The Contact Region Of A Via By Use Of A Continuous Inline Vacuum Deposition Process
US20060148241A1 (en) * 2004-12-30 2006-07-06 Advantech Global, Ltd System for and method of forming via holes by use of selective plasma etching in a continuous inline shadow mask deposition process
US7268431B2 (en) 2004-12-30 2007-09-11 Advantech Global, Ltd System for and method of forming via holes by use of selective plasma etching in a continuous inline shadow mask deposition process
US20150011033A1 (en) * 2013-07-08 2015-01-08 Samsung Display Co., Ltd. Mask assembly and method of fabricating organic light emitting display device using the same
US9263707B2 (en) * 2013-07-08 2016-02-16 Samsung Display Co., Ltd. Mask assembly and method of fabricating organic light emitting display device using the same
US10355209B2 (en) 2013-11-14 2019-07-16 Dai Nippon Printing Co., Ltd. Vapor deposition mask, frame-equipped vapor deposition mask, and method for producing organic semiconductor element
US10825989B2 (en) 2013-11-14 2020-11-03 Dai Nippon Printing Co., Ltd. Vapor deposition mask, frame-equipped vapor deposition mask, and method for producing organic semiconductor element
US11404640B2 (en) 2013-11-14 2022-08-02 Dai Nippon Printing Co., Ltd. Vapor deposition mask, frame-equipped vapor deposition mask, and method for producing organic semiconductor element
US10173240B2 (en) 2013-12-13 2019-01-08 V Technology Co., Ltd. Mask and method for manufacturing the same
US20150376765A1 (en) * 2014-06-30 2015-12-31 Shanghai Tianma AM-OLED Co., Ltd. Mask, method for manufacturing the same and process device
US9605336B2 (en) * 2014-06-30 2017-03-28 Shanghai Tianma AM-OLED Co., Ltd. Mask, method for manufacturing the same and process device
WO2016061215A1 (en) * 2014-10-17 2016-04-21 Advantech Global, Ltd Multi-mask alignment system and method
US10323316B2 (en) 2014-10-17 2019-06-18 Advantech Global, Ltd Multi-mask alignment system and method

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JP2004036001A (en) 2004-02-05
KR20040003600A (en) 2004-01-13
DE60334052D1 (en) 2010-10-21
KR100480705B1 (en) 2005-04-06
EP1378933A3 (en) 2006-04-19
EP1378933B1 (en) 2010-09-08
CN1255844C (en) 2006-05-10
EP1378933A2 (en) 2004-01-07

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