US20030146191A1 - Etching method for nickel-vanadium alloy - Google Patents

Etching method for nickel-vanadium alloy Download PDF

Info

Publication number
US20030146191A1
US20030146191A1 US10/248,335 US24833503A US2003146191A1 US 20030146191 A1 US20030146191 A1 US 20030146191A1 US 24833503 A US24833503 A US 24833503A US 2003146191 A1 US2003146191 A1 US 2003146191A1
Authority
US
United States
Prior art keywords
nickel
etching
vanadium alloy
etchant
sulfuric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/248,335
Inventor
Ho-Ming Tong
Chun-Chi Lee
Jen-Kuang Fang
Min-Lung Huang
Jau-Shoung Chen
Ching-Huei Su
Chao-Fu Weng
Yung-Chi Lee
Yu-Chen Chou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Engineering Inc
Original Assignee
Advanced Semiconductor Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Engineering Inc filed Critical Advanced Semiconductor Engineering Inc
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC. reassignment ADVANCED SEMICONDUCTOR ENGINEERING, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOU, YU-CHEN, LEE, CHUN-CHI, FANG, JEN-KUANG, HUANG, MIN-LUNG, LEE, YUNG-CHI, SU, CHING-HUEI, WENG, CHAO-FU, CHEN, JAU-SHOUNG, TONG, HO-MING
Publication of US20030146191A1 publication Critical patent/US20030146191A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals

Definitions

  • the present invention relates to a method for etching a nickel-vanadium alloy. More particularly, the present invention relates to a method for etching a nickel-vanadium alloy, wherein sulfuric acid is used as an etchant and a voltage or current is applied to control the etching rate.
  • etching techniques Two types are broadly used in the semiconductor processing, wherein one type of the etching techniques is wet etching and the other is drying etching.
  • Wet etching basically relies on a chemical reaction to perform the etching of a thin film, while dry etching is based on a physical phenomenon for the film etching.
  • Wet etching is the originally used etching technique, wherein the removal of the thin film results from a chemical reaction between the thin film and the etchant.
  • etching plasma is the tool used in dry etching, wherein the thin film is etched resulting from an ion bombardment from the plasma.
  • Wet etching is an anisotropic type of etching, while drying etching is an isotropic type of etching.
  • the chemical reaction in wet etching is between the etchant and the thin film.
  • the reactant in the etchant diffuses to the surface of the thin film, and reacts with the molecules on the surface of the thin film to generate a product.
  • the generated product then discharges to the etchant by diffusion to complete the thin-film removal process.
  • the etchant concentration the etching reaction time, the etching reaction temperature and the method for mixing the etchant, etc.
  • the etchant concentration or the temperature is higher, the thin film-etching rate is faster.
  • the etching reaction time is longer.
  • the reaction between the reactant and the thin film enhances due to the increase of fluid convention resulting from the mixing action, rather than completely relying on diffusion.
  • U.S. Pat. No. 5,508,229 performing a one-step etching method to define an under ball metallurgy (UBM) on a substrate material is disclosed, wherein the under ball metallurgy is a three-layered structure of aluminum/nickel-vanadium alloy/copper. Subsequent to the formation of solder bumps, the aluminum, nickel-vanadium alloy and copper outside the soldered area are simultaneously removed by an etchant that comprises phosphoric acid, deionized water, acetic acid and hydrogen peroxide. The concentrations of these components in the etchant disclosed in U.S. Pat. No.
  • 5,508,229 are as follows: phorphoric acid is about 1% to 25%, deionized water is about 63% to 98%, acetic acid is about 1% to 10% and hydrogen peroxide is about 0.1% to 2%. Further, the etching reaction temperature is about 70 degrees Celsius, while the etching reaction time is about 90 seconds to 600 seconds.
  • the present invention provides a method for etching a nickel-vanadium alloy, wherein sulfuric acid is used as an etchant.
  • the present invention provides a method for etching a nickel-vanadium alloy, wherein electric current or voltage is applied to control the electrolytic reaction between the etchant and the nickel-vanadium alloy.
  • the etching rate of the nickel-vanadium alloy is increased by the electrolytic reaction.
  • a method for etching a nickel-vanadium alloy wherein a container comprising an etchant therein is provided.
  • the etchant is formed with, for example, sulfuric acid and deionized water, wherein the concentration of the sulfuric acid is about 0.5% to 98%.
  • the etching rate for a nickel-vanadium alloy is enhanced.
  • the method of the present invention provides an electrolytic tank, which contains an etching solution.
  • the etching solution is formed with, for example, sulfuric acid and deionized water.
  • the concentration of sulfuric acid is between 0.5% to 98%.
  • a cathode and an anode are further provided and placed in the etchant.
  • a material for the cathode is, for example, platinum/titanium (Pt/Ti) or titanium (Ti), while the nickel-vanadium alloy serves as the electrolytic anode.
  • the etching rate of the nickel-vanadium alloy on the substrate material is controlled by the electrolytic reaction.
  • the concentration of sulfuric acid is controlled between 0.5% to 98% and the reaction temperature is between room temperature to about 80 degrees Celsius. Under such an etching condition, a nickel-vanadium alloy is efficiently etched.
  • the sulfuric acid concentration can also be about 5% to 80% and is preferably controlled to about 10%.
  • a fixed current electrolytic method is employed to etch the nickel-vanadium alloy, wherein the fixed current is about 0.0005A/cm 2 to about 0.5A/cm 2 .
  • step current, pulse current or fixed current can also be used to perform the nickel-vanadium alloy electrolysis.
  • FIG. 1 is a schematic diagram illustrating the etching of a nickel-vanadium alloy using sulfuric acid as an etchant according to one aspect of the present invention.
  • FIG. 2 is a schematic diagram illustrating the control of the nickel-vanadium etching rate by an electrolytic reaction according to one aspect of the present invention.
  • FIG. 1 is a schematic diagram illustrating the etching of a nickel-vanadium alloy using sulfuric acid as an etchant according to one aspect of the present invention.
  • a container 102 is first provided, wherein an etchant 104 is placed in the container 102 .
  • the etchant 104 for example, is formed with sulfuric acid and deionized water, wherein the concentration of sulfuric acid is about 0.5% to about 98%.
  • the etchant 104 for etching the nickel-vanadium alloy of the present invention comprises sulfuric acid. Diluting the sulfuric acid with deionzied water is easily accomplished and is simpler than the conventional approach using phosphoric acid, deionized water, acetic acid and hydrogen peroxide as an etchant. Further, the etchant 104 of the present invention is favorably compatible with the etching characteristics of the nickel-vanadium alloy, such as, etching rate, etching selectivity ratio, etc.
  • FIG. 2 is a schematic diagram illustrating the control of the nickel-vanadium etching rate by an electrolytic reaction according to one aspect of the present invention.
  • an electrolytic tank 202 is provided, wherein an etchant 208 is placed inside the electrolytic tank 202 .
  • the etchant 208 is formed with sulfuric acid and deionized water, wherein the sulfuric acid concentration is about 0.5% to about 98%, while the concentration of the deionized water is between about 2% to about 99.5%.
  • an anode 204 and a cathode 206 are provided.
  • the anode 204 and the cathode 206 are submerged in the etchant 208 .
  • the anode is formed with a material including platinum/titanium or titanium.
  • the substrate material 200 that comprises the nickel-vanadium alloy is also submerged in the etchant 208 and is disposed on the anode 204 .
  • the nickel-vanadium alloy is thus equivalent to an electrolytic anode.
  • the electrolytic reaction conducted in the electrolytic tank 202 is then used to control the etching rate of the nickel-vanadium alloy on the substrate material 200 .
  • the concentration of the sulfuric acid is controlled to about 0.5% to 98% and the reaction temperature is between room temperature to about 80 degrees Celsius. Under such an etching condition, the nickel-vanadium alloy is etched.
  • the sulfuric acid concentration is between about 5% to about 80%, and is preferably controlled to about 10%.
  • the electrolytic method used in etching the nickel-vanadium alloy includes fixed current electrolysis, wherein the fixed current is between about 0.005A/cm 2 and about 0.5A/cm 2 .
  • the present invention can further employ step current, pulse current or fixed voltage electrolysis for etching the nickel-vanadium alloy.
  • the above etching condition regardless of whether it is temperature, sulfuric acid concentration or the electrolytic condition (condition for fixed current electrolysis, pulse current electrolysis, step current electrolysis, fixed voltage electrolysis), can be changed depending on the specification of the manufacturing process.
  • the etchant selected for the present invention comprises sulfuric acid and deionized water
  • the diluted sulfuric acid in the electrolytic tank 202 electrolyzes the nickel-vanadium alloy, which is then discharged into the etchant 208 .
  • the etching rate of the nickel-vanadium alloy is thereby enhanced.
  • phosphoric acid, acetic acid, hydrogen peroxide and deionized water mixture as the etchant in the prior art, the etching rate can not be improved by an electrolytic reaction.
  • the method for etching a nickel-vanadium alloy of the present invention is applicable to any process wherein a nickel-vanadium alloy needs to be etched, for example, the manufacturing of an under ball metallurgy in a bumping process or the patterning of a nickel-vanadium alloy layer on a substrate material.
  • the method for etching a nickel-vanadium alloy of the present invention in which a major component of the etchant is sulfuric acid and deionized water, provides a favorable etching effect on the nickel-vanadium alloy.
  • the etching method of a nickel vanadium alloy of the present invention can rely on the etchant and the electrolytic reaction between the etchant and the nickel-vanadium alloy to control the etching rate of the nickel-vanadium alloy.
  • solder bumps are prevented from being damaged.
  • the required cost for the nickel-vanadium alloy etching method of the present invention is low.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A method for etching a nickel-vanadium alloy is described. The etching of the nickel-vanadium alloy is conducted using an etchant that comprises sulfuric acid. Further, the etching rate of the nickel-vanadium alloy is controlled based on the electrolytic reaction between the etchant and the nickel-vanadium alloy thin film.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application claims the priority benefit of Taiwan application serial no. 911 021 71, filed Feb. 7, 2002. [0001]
    • BACKGROUND OF INVENTION
  • 1. Field of the Invention [0002]
  • The present invention relates to a method for etching a nickel-vanadium alloy. More particularly, the present invention relates to a method for etching a nickel-vanadium alloy, wherein sulfuric acid is used as an etchant and a voltage or current is applied to control the etching rate. [0003]
  • 2. Background of the Invention [0004]
  • Two types of etching techniques are broadly used in the semiconductor processing, wherein one type of the etching techniques is wet etching and the other is drying etching. Wet etching basically relies on a chemical reaction to perform the etching of a thin film, while dry etching is based on a physical phenomenon for the film etching. Wet etching is the originally used etching technique, wherein the removal of the thin film results from a chemical reaction between the thin film and the etchant. On the other hand, etching plasma is the tool used in dry etching, wherein the thin film is etched resulting from an ion bombardment from the plasma. Wet etching is an anisotropic type of etching, while drying etching is an isotropic type of etching. [0005]
  • The chemical reaction in wet etching is between the etchant and the thin film. The reactant in the etchant diffuses to the surface of the thin film, and reacts with the molecules on the surface of the thin film to generate a product. The generated product then discharges to the etchant by diffusion to complete the thin-film removal process. However, to properly control the wet eching reaction, there are several major parameters that need to be considered, such as, the etchant concentration, the etching reaction time, the etching reaction temperature and the method for mixing the etchant, etc. Normally, when the etchant concentration or the temperature is higher, the thin film-etching rate is faster. Further, when the film is thick, the etching reaction time is longer. Moreover, with an appropriate mixing method, the reaction between the reactant and the thin film enhances due to the increase of fluid convention resulting from the mixing action, rather than completely relying on diffusion. [0006]
  • In U.S. Pat. No. 5,508,229, performing a one-step etching method to define an under ball metallurgy (UBM) on a substrate material is disclosed, wherein the under ball metallurgy is a three-layered structure of aluminum/nickel-vanadium alloy/copper. Subsequent to the formation of solder bumps, the aluminum, nickel-vanadium alloy and copper outside the soldered area are simultaneously removed by an etchant that comprises phosphoric acid, deionized water, acetic acid and hydrogen peroxide. The concentrations of these components in the etchant disclosed in U.S. Pat. No. 5,508,229 are as follows: phorphoric acid is about 1% to 25%, deionized water is about 63% to 98%, acetic acid is about 1% to 10% and hydrogen peroxide is about 0.1% to 2%. Further, the etching reaction temperature is about 70 degrees Celsius, while the etching reaction time is about 90 seconds to 600 seconds. [0007]
  • However, based on the disclosure in U.S. Pat. No. 5,508,229, it is difficult to determine how etching concentration, etching reaction time and etching reaction temperature control and adjust the etching rate. Further, if the etching rate is controlled by the above parameters, the range for the etching rate is very limited. [0008]
    • SUMMARY OF INVENTION
  • Accordingly, the present invention provides a method for etching a nickel-vanadium alloy, wherein sulfuric acid is used as an etchant. [0009]
  • The present invention provides a method for etching a nickel-vanadium alloy, wherein electric current or voltage is applied to control the electrolytic reaction between the etchant and the nickel-vanadium alloy. The etching rate of the nickel-vanadium alloy is increased by the electrolytic reaction. [0010]
  • In accordance with the present invention, a method for etching a nickel-vanadium alloy is provided, wherein a container comprising an etchant therein is provided. The etchant is formed with, for example, sulfuric acid and deionized water, wherein the concentration of the sulfuric acid is about 0.5% to 98%. [0011]
  • According to the present invention, the etching rate for a nickel-vanadium alloy is enhanced. The method of the present invention provides an electrolytic tank, which contains an etching solution. The etching solution is formed with, for example, sulfuric acid and deionized water. The concentration of sulfuric acid is between 0.5% to 98%. A cathode and an anode are further provided and placed in the etchant. A material for the cathode is, for example, platinum/titanium (Pt/Ti) or titanium (Ti), while the nickel-vanadium alloy serves as the electrolytic anode. The etching rate of the nickel-vanadium alloy on the substrate material is controlled by the electrolytic reaction. [0012]
  • During the etching of the nickel-vanadium alloy in the present invention, the concentration of sulfuric acid is controlled between 0.5% to 98% and the reaction temperature is between room temperature to about 80 degrees Celsius. Under such an etching condition, a nickel-vanadium alloy is efficiently etched. [0013]
  • In the present invention, the sulfuric acid concentration can also be about 5% to 80% and is preferably controlled to about 10%. During the etching of the nickel-vanadium alloy, a fixed current electrolytic method is employed to etch the nickel-vanadium alloy, wherein the fixed current is about 0.0005A/cm[0014] 2 to about 0.5A/cm2.
  • Further, in accordance of the present invention, step current, pulse current or fixed current can also be used to perform the nickel-vanadium alloy electrolysis. [0015]
  • It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.[0016]
    • BRIEF DESCRIPTION OF DRAWINGS
  • The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings, [0017]
  • FIG. 1 is a schematic diagram illustrating the etching of a nickel-vanadium alloy using sulfuric acid as an etchant according to one aspect of the present invention; and [0018]
  • FIG. 2 is a schematic diagram illustrating the control of the nickel-vanadium etching rate by an electrolytic reaction according to one aspect of the present invention. [0019]
    • DETAILED DESCRIPTION
  • Referring to FIG. 1, FIG. 1 is a schematic diagram illustrating the etching of a nickel-vanadium alloy using sulfuric acid as an etchant according to one aspect of the present invention. To perform an etching on a nickel-vanadium alloy, a [0020] container 102 is first provided, wherein an etchant 104 is placed in the container 102. The etchant 104, for example, is formed with sulfuric acid and deionized water, wherein the concentration of sulfuric acid is about 0.5% to about 98%.
  • The etchant [0021] 104 for etching the nickel-vanadium alloy of the present invention comprises sulfuric acid. Diluting the sulfuric acid with deionzied water is easily accomplished and is simpler than the conventional approach using phosphoric acid, deionized water, acetic acid and hydrogen peroxide as an etchant. Further, the etchant 104 of the present invention is favorably compatible with the etching characteristics of the nickel-vanadium alloy, such as, etching rate, etching selectivity ratio, etc.
  • Referring to FIG. 2, FIG. 2 is a schematic diagram illustrating the control of the nickel-vanadium etching rate by an electrolytic reaction according to one aspect of the present invention. During the etching of a nickel-vanadium alloy on a [0022] substrate material 200, an electrolytic tank 202 is provided, wherein an etchant 208 is placed inside the electrolytic tank 202. The etchant 208 is formed with sulfuric acid and deionized water, wherein the sulfuric acid concentration is about 0.5% to about 98%, while the concentration of the deionized water is between about 2% to about 99.5%.
  • Still referring to FIG. 2, an [0023] anode 204 and a cathode 206 are provided. The anode 204 and the cathode 206 are submerged in the etchant 208. The anode is formed with a material including platinum/titanium or titanium. The substrate material 200 that comprises the nickel-vanadium alloy is also submerged in the etchant 208 and is disposed on the anode 204. The nickel-vanadium alloy is thus equivalent to an electrolytic anode. The electrolytic reaction conducted in the electrolytic tank 202 is then used to control the etching rate of the nickel-vanadium alloy on the substrate material 200.
  • In this aspect of the present invention, the concentration of the sulfuric acid is controlled to about 0.5% to 98% and the reaction temperature is between room temperature to about 80 degrees Celsius. Under such an etching condition, the nickel-vanadium alloy is etched. [0024]
  • In this aspect of the present invention, the sulfuric acid concentration is between about 5% to about 80%, and is preferably controlled to about 10%. The electrolytic method used in etching the nickel-vanadium alloy includes fixed current electrolysis, wherein the fixed current is between about 0.005A/cm[0025] 2 and about 0.5A/cm2. The present invention can further employ step current, pulse current or fixed voltage electrolysis for etching the nickel-vanadium alloy.
  • However, the above etching condition, regardless of whether it is temperature, sulfuric acid concentration or the electrolytic condition (condition for fixed current electrolysis, pulse current electrolysis, step current electrolysis, fixed voltage electrolysis), can be changed depending on the specification of the manufacturing process. [0026]
  • Since the etchant selected for the present invention comprises sulfuric acid and deionized water, the diluted sulfuric acid in the [0027] electrolytic tank 202 electrolyzes the nickel-vanadium alloy, which is then discharged into the etchant 208. The etching rate of the nickel-vanadium alloy is thereby enhanced. Using phosphoric acid, acetic acid, hydrogen peroxide and deionized water mixture as the etchant in the prior art, the etching rate can not be improved by an electrolytic reaction.
  • The method for etching a nickel-vanadium alloy of the present invention is applicable to any process wherein a nickel-vanadium alloy needs to be etched, for example, the manufacturing of an under ball metallurgy in a bumping process or the patterning of a nickel-vanadium alloy layer on a substrate material. [0028]
  • In accordance to the present invention, the method for etching a nickel-vanadium alloy of the present invention, in which a major component of the etchant is sulfuric acid and deionized water, provides a favorable etching effect on the nickel-vanadium alloy. [0029]
  • Further, the etching method of a nickel vanadium alloy of the present invention can rely on the etchant and the electrolytic reaction between the etchant and the nickel-vanadium alloy to control the etching rate of the nickel-vanadium alloy. [0030]
  • Moreover, using the etching method of the present invention to remove the nickel-vanadium alloy of an under ball metallurgy during a bumping process, the solder bumps are prevented from being damaged. [0031]
  • Further, the required cost for the nickel-vanadium alloy etching method of the present invention is low. [0032]
  • It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents. [0033]

Claims (14)

1. An etching method for a nickel-vanadium alloy, comprising:
providing an etchant, which comprises at least sulfuric acid; and
using the etchant to perform an etching on the nickel-vanadium alloy.
2. An etching method for a nickel-vanadium alloy, comprising:
providing an etchant that comprises sulfuric acid and deionized water; and
using the etchant to etch the nickel-vanadium alloy.
3. The method of claim 2, wherein a concentration of the sulfuric acid is about 0.5% to about 98%.
4. The method of claim 2, wherein a concentration of the deionized water is about 2% to about 99.5%.
5. An etching method for a nickel-vanadium alloy, comprising:
providing an electrolytic tank, wherein an etching solution is placed in the electrolytic tank,
and the etching solution comprises sulfuric acid and deionized water;
providing an anode and a cathode;
placing a substrate material having a nickel-vanadium alloy thereon on the anode; and
controlling an etching rate of the nickel-vanadium alloy by an electrolytic reaction.
6. The method of claim 5, wherein a concentration of the sulfuric acid is about 0.5% to about 98%.
7. The method of claim 5, wherein a concentration of the deionized water is about 2% to about 99.5%.
8. The method of claim 5, wherein a material for the cathode includes platinum/titanium.
9. The method of claim 5, wherein a material for the cathode includes titanium.
10. The method of claim 5, wherein the electrolytic reaction includes generating a fixed current to electrolyze the nickel-vanadium alloy.
11. The method of claim 10, wherein the fixed current is about 0.005A/cm2 to about 0.5A/cm2.
12. The method of claim 5, wherein the electrolytic reaction includes generating a step current to electrolyze the nickel-vanadium alloy.
13. The method of claim 5, wherein the electrolytic reaction includes generating a pulse current to electrolyze the nickel-vanadium alloy.
14. The method of claim 5, wherein the electrolytic reaction includes providing a voltage between the anode and cathode to electrolyze the nickel-vanadium alloy.
US10/248,335 2002-02-07 2003-01-10 Etching method for nickel-vanadium alloy Abandoned US20030146191A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW91102171 2002-02-07
TW91102171 2002-02-07

Publications (1)

Publication Number Publication Date
US20030146191A1 true US20030146191A1 (en) 2003-08-07

Family

ID=27657742

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/248,335 Abandoned US20030146191A1 (en) 2002-02-07 2003-01-10 Etching method for nickel-vanadium alloy

Country Status (1)

Country Link
US (1) US20030146191A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090221152A1 (en) * 2006-02-22 2009-09-03 Frank Dietz Etching Solution And Method For Structuring A UBM Layer System
US8759183B2 (en) 2012-01-03 2014-06-24 Samsung Electronics Co., Ltd. Methods of forming semiconductor devices using electrolyzed sulfuric acid (ESA)

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2429676A (en) * 1942-04-24 1947-10-28 Battelle Memorial Institute Electrolyte for and method of anodically polishing nickel
US2594124A (en) * 1946-09-12 1952-04-22 Charlesworth Percy Allan Electrolytic polishing of metals
US3249523A (en) * 1961-09-15 1966-05-03 Alusuisse Method of electrolytically etching aluminum
US3791946A (en) * 1973-01-16 1974-02-12 Western Electric Co Recovery of sodium persulfate solutions
US4169026A (en) * 1976-07-23 1979-09-25 Matsushita Electric Industrial Co., Ltd. Etchant for electrolytic etching of a ferrite for a magnetic head and method of producing a magnetic head
US4400248A (en) * 1982-03-08 1983-08-23 Occidental Chemical Corporation Electrolytic stripping process
US4568395A (en) * 1985-05-10 1986-02-04 Nabhani Abdol R Precleaner system and soldering flux
US4613417A (en) * 1984-12-28 1986-09-23 At&T Bell Laboratories Semiconductor etching process
US4689125A (en) * 1982-09-10 1987-08-25 American Telephone & Telegraph Co., At&T Bell Labs Fabrication of cleaved semiconductor lasers
US5508229A (en) * 1994-05-24 1996-04-16 National Semiconductor Corporation Method for forming solder bumps in semiconductor devices
US6660406B2 (en) * 2000-07-07 2003-12-09 Mitsui Mining & Smelting Co., Ltd. Method for manufacturing printed wiring board comprising electrodeposited copper foil with carrier and resistor circuit; and printed wiring board comprising resistor circuit
US6664128B2 (en) * 2002-03-01 2003-12-16 Advanced Semiconductor Engineering, Inc. Bump fabrication process
US6716739B2 (en) * 2002-02-19 2004-04-06 Advanced Semiconductor Engineering, Inc. Bump manufacturing method
US6749760B2 (en) * 2001-10-26 2004-06-15 Intel Corporation Etchant formulation for selectively removing thin films in the presence of copper, tin, and lead

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2429676A (en) * 1942-04-24 1947-10-28 Battelle Memorial Institute Electrolyte for and method of anodically polishing nickel
US2594124A (en) * 1946-09-12 1952-04-22 Charlesworth Percy Allan Electrolytic polishing of metals
US3249523A (en) * 1961-09-15 1966-05-03 Alusuisse Method of electrolytically etching aluminum
US3791946A (en) * 1973-01-16 1974-02-12 Western Electric Co Recovery of sodium persulfate solutions
US4169026A (en) * 1976-07-23 1979-09-25 Matsushita Electric Industrial Co., Ltd. Etchant for electrolytic etching of a ferrite for a magnetic head and method of producing a magnetic head
US4400248A (en) * 1982-03-08 1983-08-23 Occidental Chemical Corporation Electrolytic stripping process
US4689125A (en) * 1982-09-10 1987-08-25 American Telephone & Telegraph Co., At&T Bell Labs Fabrication of cleaved semiconductor lasers
US4613417A (en) * 1984-12-28 1986-09-23 At&T Bell Laboratories Semiconductor etching process
US4568395A (en) * 1985-05-10 1986-02-04 Nabhani Abdol R Precleaner system and soldering flux
US5508229A (en) * 1994-05-24 1996-04-16 National Semiconductor Corporation Method for forming solder bumps in semiconductor devices
US6660406B2 (en) * 2000-07-07 2003-12-09 Mitsui Mining & Smelting Co., Ltd. Method for manufacturing printed wiring board comprising electrodeposited copper foil with carrier and resistor circuit; and printed wiring board comprising resistor circuit
US6749760B2 (en) * 2001-10-26 2004-06-15 Intel Corporation Etchant formulation for selectively removing thin films in the presence of copper, tin, and lead
US6716739B2 (en) * 2002-02-19 2004-04-06 Advanced Semiconductor Engineering, Inc. Bump manufacturing method
US6664128B2 (en) * 2002-03-01 2003-12-16 Advanced Semiconductor Engineering, Inc. Bump fabrication process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090221152A1 (en) * 2006-02-22 2009-09-03 Frank Dietz Etching Solution And Method For Structuring A UBM Layer System
US8759183B2 (en) 2012-01-03 2014-06-24 Samsung Electronics Co., Ltd. Methods of forming semiconductor devices using electrolyzed sulfuric acid (ESA)

Similar Documents

Publication Publication Date Title
US11264518B2 (en) Etching of solar cell materials
CN101882595B (en) Method and device for removing barrier layer
US5798303A (en) Etching method for use in fabrication of semiconductor devices
EP1926132A1 (en) Chromium-free etching solution for Si-substrates and SiGe-substrates, method for revealing defects using the etching solution and process for treating Si-substrates and SiGe-substrates using the etching solution
US6903015B2 (en) Method of manufacturing a semiconductor device using a wet process
JPH11233486A (en) Method and device for etching dielectric layer on semiconductor substrate
US6723226B1 (en) Method and apparatus for forming electrolytic water and apparatus for washing semiconductor substrate using electrolytic water-forming apparatus
US20030146191A1 (en) Etching method for nickel-vanadium alloy
TWI501302B (en) Barrier removal method and device
US6848975B2 (en) Electrochemical planarization of metal feature surfaces
JP4444420B2 (en) Process for forming conductive structure and semiconductor device
US20210238762A1 (en) Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment
JP3437716B2 (en) Semiconductor substrate cleaning method and cleaning apparatus used therefor
CN103985670A (en) Method and device for removing barrier layer
WO2022179680A1 (en) A method for etching molybdenum
JP2001244153A (en) Manufacturing method of electrode foil for aluminum electrolytic capacitor
JP2002076272A (en) Method of manufacturing semiconductor device
CN110911351A (en) Method for preparing silicon oxide on surface of silicon wafer
US20190256986A1 (en) Ge, sige or germanide washing method
JPH11135475A (en) Method for manufacturing semiconductor device
CN120548388A (en) Electroetching method for area-selective processing of substrates
JP2006066728A (en) Substrate processing apparatus and method
JPH09326435A (en) Method for manufacturing semiconductor device
KR950014503B1 (en) Polymer removal method after dry etching of polysilicon
CN117894751A (en) Etching method of thick metal layer

Legal Events

Date Code Title Description
AS Assignment

Owner name: ADVANCED SEMICONDUCTOR ENGINEERING, INC., TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TONG, HO-MING;LEE, CHUN-CHI;FANG, JEN-KUANG;AND OTHERS;REEL/FRAME:013345/0239;SIGNING DATES FROM 20021224 TO 20021231

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION