US20020071519A1 - Energy dispersion-type x-ray detection system - Google Patents
Energy dispersion-type x-ray detection system Download PDFInfo
- Publication number
- US20020071519A1 US20020071519A1 US09/934,006 US93400601A US2002071519A1 US 20020071519 A1 US20020071519 A1 US 20020071519A1 US 93400601 A US93400601 A US 93400601A US 2002071519 A1 US2002071519 A1 US 2002071519A1
- Authority
- US
- United States
- Prior art keywords
- superior
- sensor
- count rate
- utilized
- analysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
Definitions
- the present invention relates to an energy dispersion-type X-ray detector utilized in energy dispersion-type X-ray analyzers and X-ray analyzers fitted with electron microscopes.
- the energy dispersion detector has a detection performance whereby the resolution and the count rate conflict with each other.
- the resolution typically deteriorates or does not function at all.
- An energy dispersion-type detector is prepared where a sensor with a low count rate but with a superior energy resolution and a sensor with poor energy resolution but with a superior count rate are positioned in a juxtaposed manner.
- a method is then adopted where a signal for the sensor with superior energy resolution is utilized as foreseeable information in quantitative analysis and then utilized in qualitative analysis, and a signal for the sensor with a superior count rate is utilized in quantitative analysis.
- the latter stage of the sensors comprise individual preamplifiers, linear amplifiers, and pulse height analyzers, and processing is performed on spectrums in both a qualitative and quantitative manner using a common control and computing unit. This means that high resolution spectra for use in qualitative analysis and high count rate spectra for use in quantitative analysis can be obtained simultaneously in a short period of time.
- FIG. 1 is a view showing a first embodiment of the present invention
- FIG. 2 is a view showing a further embodiment of the present invention.
- FIG. 1 shows an embodiment of an energy dispersion-type detection system enabling processing of data obtained while simultaneously detecting a high resolution X-ray spectrum and a high counting efficiency X-ray spectrum, with dimensions being small in both cases.
- a sample 1 is irradiated with primary X-rays 2 , and fluorescent X-rays 3 generated as a result are detected by an energy dispersion-type X-ray detector 4 .
- high resolution sensor (first sensor) 5 characterized by high resolution such as, for example, a silicon drift chamber (SDD- 1 ) with the time constant of a count circuit set to be long and utilizing
- the resolution with respect to the Mn-Ka line (5.9 keV) is 150 eV or less, and the count rate is in the order of 1000 cps.
- a microcalorimeter (MC) or Josephson junction superconducting X-ray detector (STJ's) is utilized as the high resolution sensor 5 , resolution (FWHM) with respect to the Mn-Ka line (5.9 keV) is a few tens of eV or less, and the count rate is from a few hundred cps to a few thousand cps.
- the resolution (FWHM) with respect to the Mn-Ka line (5.9 keV) is 250 eV, with a count rate in the order of a few hundred thousand cps.
- the resolution (FWHM) with respect to the Mn-Ka line (5.9 keV) is 200 eV or less, with the count rate being in the order of a few tens of thousands of cps.
- FIG. 2 an embodiment where, rather than providing an integrated unit as the high count rate sensor 6 , there is separately provided a proportional counter tube with a resolution in the order of 1 keV but a count rate in the order of a few hundred thousand cps and, when a scintillation counter is utilized, a poor resolution of a few keV and a count rate of a few hundred thousand cps, is shown in FIG. 2.
- FIG. 1 also demonstrates the X-ray spectrum for the case where a microcalorimeter (MC) and semiconductor (SSD) are utilized as the high resolution sensor 5 .
- High resolution X-ray spectra and high count rate X-ray spectra illustrate the respective sensor outputs when the sample 1 is barium titanate.
- a microcalorimeter (MC) giving a resolution (FWHM) in the order of 10 eV for a Ba-La line (4.47 keV) and a Ti-Kb line (4.51 keV) can be provided separately, but it is not possible to provide a semiconductor detector with a resolution (FWHM) in the order of 180 eV separately.
- FWHM resolution
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Measurement Of Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
- The present invention relates to an energy dispersion-type X-ray detector utilized in energy dispersion-type X-ray analyzers and X-ray analyzers fitted with electron microscopes.
- With energy dispersion-type fluorescent X-ray analyzers of the related art, selections are made as to whether to give priority to resolution or to count rate by utilizing an Si semiconductor detector with superior energy resolution and then switching over the time constant of a count circuit. However, there are no fluorescent X-ray analyzers capable of utilizing high resolution information to perform measurements at a high count rate, i.e. to take measurements with a high degree of precision over a short period of time.
- The energy dispersion detector has a detection performance whereby the resolution and the count rate conflict with each other. Typically, when the device thickness and surface area of the sensor are increased in order to increase the count rate, the resolution either deteriorates or does not function at all.
- In the related art, when elemental analysis or thin film measurements are carried out using a fluorescent X-ray analyzer, and the sample is not as-yet known, qualitative analysis is required. This situation requires a high resolution spectrum where each peak overlaps as little as possible, and a silicon drift chamber or semiconductor detector is therefore used. Conversely, in the case of quality management when measuring thin films, or cases where the structural composition is already known from the point of view of quality management and it is only wished to perform composition measurements, then proportional counter tubes having high count rate characteristics are used with the aim of keeping statistical errors regarding the strength of the X-rays small. However, after performing qualitative analysis using a high-resolution system in order to identify as yet unknown samples and implement high-precision measurements, it is necessary to perform the measurements again using a high resolution system taking the identified element as foreseeable information.
- An energy dispersion-type detector is prepared where a sensor with a low count rate but with a superior energy resolution and a sensor with poor energy resolution but with a superior count rate are positioned in a juxtaposed manner. A method is then adopted where a signal for the sensor with superior energy resolution is utilized as foreseeable information in quantitative analysis and then utilized in qualitative analysis, and a signal for the sensor with a superior count rate is utilized in quantitative analysis. The latter stage of the sensors comprise individual preamplifiers, linear amplifiers, and pulse height analyzers, and processing is performed on spectrums in both a qualitative and quantitative manner using a common control and computing unit. This means that high resolution spectra for use in qualitative analysis and high count rate spectra for use in quantitative analysis can be obtained simultaneously in a short period of time.
- FIG. 1 is a view showing a first embodiment of the present invention;
- FIG. 2 is a view showing a further embodiment of the present invention;
- FIG. 1 shows an embodiment of an energy dispersion-type detection system enabling processing of data obtained while simultaneously detecting a high resolution X-ray spectrum and a high counting efficiency X-ray spectrum, with dimensions being small in both cases. A
sample 1 is irradiated withprimary X-rays 2, andfluorescent X-rays 3 generated as a result are detected by an energy dispersion-type X-ray detector 4. A high resolution sensor (first sensor) 5 characterized by high resolution such as, for example, a silicon drift chamber (SDD-1) with the time constant of a count circuit set to be long and utilizing a high resolution characteristic, or a microcalorimeter (MC) or a Josephson junction superconducting X-ray detector (STJ's), and a high count rate sensor (second sensor) 6 characterized by a high count rate such as, for example, a high count rate silicon drift chamber (SDD-2) with the time constant of a count circuit set to be short, or a high purity Si semiconductor detector or Si(Li) semiconductor detector (SSD) are provided at an energy dispersiontype X-ray detector 4. Then, processing is performed on spectrums in both a qualitative and quantitative manner using a common control andcomputing unit 11. - When a silicon drift chamber (SDD-1) is utilized as the
high resolution sensor 5, the resolution with respect to the Mn-Ka line (5.9 keV) is 150 eV or less, and the count rate is in the order of 1000 cps. When a microcalorimeter (MC) or Josephson junction superconducting X-ray detector (STJ's) is utilized as thehigh resolution sensor 5, resolution (FWHM) with respect to the Mn-Ka line (5.9 keV) is a few tens of eV or less, and the count rate is from a few hundred cps to a few thousand cps. - When a silicon drift chamber (SDD-1) is utilized as the high
count rate sensor 6, the resolution (FWHM) with respect to the Mn-Ka line (5.9 keV) is 250 eV, with a count rate in the order of a few hundred thousand cps. When a high purity Si semiconductor detector or Si (Li) semiconductor detector (SSD) is utilized in combination with a digital signal processing system, the resolution (FWHM) with respect to the Mn-Ka line (5.9 keV) is 200 eV or less, with the count rate being in the order of a few tens of thousands of cps. With the silicon drift chamber (SDD), high energy detection is not possible because of the inverse relationship with device thickness, and a detection rate in the order of 15% is obtained at 25 keV. However, with a high purity Si semiconductor detector or Si (Li) semiconductor detector (SSD), a detection rate in the order of 75% can be obtained at 25 keV. - Further, an embodiment where, rather than providing an integrated unit as the high
count rate sensor 6, there is separately provided a proportional counter tube with a resolution in the order of 1 keV but a count rate in the order of a few hundred thousand cps and, when a scintillation counter is utilized, a poor resolution of a few keV and a count rate of a few hundred thousand cps, is shown in FIG. 2. - FIG. 1 also demonstrates the X-ray spectrum for the case where a microcalorimeter (MC) and semiconductor (SSD) are utilized as the
high resolution sensor 5. High resolution X-ray spectra and high count rate X-ray spectra illustrate the respective sensor outputs when thesample 1 is barium titanate. A microcalorimeter (MC) giving a resolution (FWHM) in the order of 10 eV for a Ba-La line (4.47 keV) and a Ti-Kb line (4.51 keV) can be provided separately, but it is not possible to provide a semiconductor detector with a resolution (FWHM) in the order of 180 eV separately. This means that qualitative analysis using X-ray spectra fromhigh resolution sensor 5 having a high resolution characteristic or quantitative analysis using spectra of the highcount rate sensor 6 having a difference in count rate of two orders of magnitude different is possible. - When a detector with a superior count rate is used in the related art, structural elements are inputted as foreseeable information and overlapping peaks are separated and analyzed. When a high resolution detector is utilized, the measuring time is extended and the intensity of the X-rays is multiplied up to a prescribed X-ray intensity so as to give the required precision. However, with the present invention, while analysis time is made short using a single system accurate analysis is still possible.
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-254968 | 2000-08-25 | ||
JP2000254968A JP4574815B2 (en) | 2000-08-25 | 2000-08-25 | Energy dispersive X-ray detection system |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020071519A1 true US20020071519A1 (en) | 2002-06-13 |
US6426993B1 US6426993B1 (en) | 2002-07-30 |
Family
ID=18743832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/934,006 Expired - Lifetime US6426993B1 (en) | 2000-08-25 | 2001-08-20 | Energy dispersion-type X-ray detection system |
Country Status (2)
Country | Link |
---|---|
US (1) | US6426993B1 (en) |
JP (1) | JP4574815B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6563902B2 (en) * | 2000-07-05 | 2003-05-13 | Seiko Instruments Inc. | Energy dispersive X-ray analyzer |
WO2010054018A1 (en) * | 2008-11-04 | 2010-05-14 | Thermo Niton Analyzers Llc | Dynamic modification of shaping time in x-ray detectors |
CN102393401A (en) * | 2011-08-25 | 2012-03-28 | 上海华碧检测技术有限公司 | Detection method of heavy metal element content in air pollutant particles |
EP2047245A4 (en) * | 2006-07-27 | 2016-12-07 | Thermo Electron Scient Instr Llc | Automatic material labeling during spectral image data acquisition |
US20170276621A1 (en) * | 2016-03-24 | 2017-09-28 | Hitachi High-Tech Science Corporation | Radiation analyzing apparatus and radiation analyzing method |
US11680913B2 (en) | 2018-04-20 | 2023-06-20 | Outotec (Finland) Oy | X-ray fluorescence analyzer system and a method for performing X-ray fluorescence analysis of an element of interest in slurry |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002031522A (en) * | 2000-07-18 | 2002-01-31 | Seiko Instruments Inc | Fluorescent x-ray film thickness gauge |
US7105828B2 (en) * | 2004-02-10 | 2006-09-12 | Ge Medical Systems Global Technology Company, Llc | Hybrid x-ray detector |
JP2005257349A (en) * | 2004-03-10 | 2005-09-22 | Sii Nanotechnology Inc | Superconductive x-ray analyzer |
JP4930874B2 (en) * | 2006-06-22 | 2012-05-16 | エスアイアイ・ナノテクノロジー株式会社 | Energy dispersive radiation detection system and target element content measurement method |
WO2008101088A2 (en) * | 2007-02-14 | 2008-08-21 | Bruker Biosciences Corporation | Handheld x-ray fluorescence spectrometer |
WO2009012352A1 (en) * | 2007-07-18 | 2009-01-22 | Bruker Biosciences Corporation | Handheld spectrometer including wireless capabilities |
WO2009032452A1 (en) * | 2007-08-03 | 2009-03-12 | Pulsetor, Llc | Pileup rejection in an energy-dispersive radiation spectrometry system |
US8039787B2 (en) * | 2007-08-03 | 2011-10-18 | Pulsetor, Llc | Digital pulse processor slope correction |
US7741609B2 (en) * | 2007-08-03 | 2010-06-22 | Pulsetor, Llc | Adapting a high-performance pulse processor to an existing spectrometry system |
US7807973B2 (en) * | 2008-08-01 | 2010-10-05 | Pulsetor, Llc | Pileup rejection in an energy-dispersive radiation spectrometry system |
JP2010249753A (en) * | 2009-04-17 | 2010-11-04 | Japan Atomic Energy Agency | Method for analyzing transuranium element contained in substance |
US8698091B2 (en) | 2009-06-10 | 2014-04-15 | Moxtek, Inc. | Semiconductor MOS entrance window for radiation detectors |
US8314468B2 (en) * | 2009-06-10 | 2012-11-20 | Moxtek, Inc. | Variable ring width SDD |
JP5420491B2 (en) * | 2010-07-22 | 2014-02-19 | 日本電子株式会社 | X-ray detector |
JP6589461B2 (en) | 2015-08-26 | 2019-10-16 | 株式会社日立ハイテクサイエンス | X-ray analyzer |
AU2019268796A1 (en) * | 2018-05-18 | 2020-12-17 | Enersoft Inc. | Systems, devices, and methods for analysis of geological samples |
JP7394464B2 (en) * | 2018-07-04 | 2023-12-08 | 株式会社リガク | Fluorescent X-ray analyzer |
WO2023175908A1 (en) * | 2022-03-18 | 2023-09-21 | 株式会社日立ハイテク | Analysis system, analysis method, and analysis program |
JPWO2023175907A1 (en) * | 2022-03-18 | 2023-09-21 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61170606A (en) * | 1985-01-24 | 1986-08-01 | Seiko Instr & Electronics Ltd | Fluorescent x-ray film thickness gage |
JP3511826B2 (en) * | 1997-01-23 | 2004-03-29 | 株式会社島津製作所 | X-ray fluorescence analyzer |
JP3918104B2 (en) * | 1997-10-02 | 2007-05-23 | 日本政策投資銀行 | X-ray fluorescence analyzer and X-ray fluorescence detector |
US6292532B1 (en) * | 1998-12-28 | 2001-09-18 | Rigaku Industrial Corporation | Fluorescent X-ray analyzer useable as wavelength dispersive type and energy dispersive type |
-
2000
- 2000-08-25 JP JP2000254968A patent/JP4574815B2/en not_active Expired - Fee Related
-
2001
- 2001-08-20 US US09/934,006 patent/US6426993B1/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6563902B2 (en) * | 2000-07-05 | 2003-05-13 | Seiko Instruments Inc. | Energy dispersive X-ray analyzer |
EP2047245A4 (en) * | 2006-07-27 | 2016-12-07 | Thermo Electron Scient Instr Llc | Automatic material labeling during spectral image data acquisition |
WO2010054018A1 (en) * | 2008-11-04 | 2010-05-14 | Thermo Niton Analyzers Llc | Dynamic modification of shaping time in x-ray detectors |
US20110211670A1 (en) * | 2008-11-04 | 2011-09-01 | Dugas Michael E | Dynamic Shaping Time Modification in X-Ray Detectors |
US8693625B2 (en) * | 2008-11-04 | 2014-04-08 | Thermo Scientific Portable Analytical Instruments Inc. | Dynamic shaping time modification in X-ray detectors |
CN102393401A (en) * | 2011-08-25 | 2012-03-28 | 上海华碧检测技术有限公司 | Detection method of heavy metal element content in air pollutant particles |
US20170276621A1 (en) * | 2016-03-24 | 2017-09-28 | Hitachi High-Tech Science Corporation | Radiation analyzing apparatus and radiation analyzing method |
US10801977B2 (en) * | 2016-03-24 | 2020-10-13 | Hitachi High-Tech Science Corporation | Radiation analyzing apparatus and radiation analyzing method |
US11680913B2 (en) | 2018-04-20 | 2023-06-20 | Outotec (Finland) Oy | X-ray fluorescence analyzer system and a method for performing X-ray fluorescence analysis of an element of interest in slurry |
Also Published As
Publication number | Publication date |
---|---|
JP4574815B2 (en) | 2010-11-04 |
US6426993B1 (en) | 2002-07-30 |
JP2002071591A (en) | 2002-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6426993B1 (en) | Energy dispersion-type X-ray detection system | |
Gabriel | Position sensitive x‐ray detector | |
EP2883085B1 (en) | Gamma-ray spectrometer | |
JP2002107134A (en) | Thickness meter for x-ray fluorescence film | |
Calzolai et al. | The new external beam facility for environmental studies at the Tandetron accelerator of LABEC | |
US20110012012A1 (en) | Method for linearizing an energy spectrum of radiation detectors | |
US6522718B2 (en) | X-ray fluorescence thickness tester | |
US3433954A (en) | Semiconductor x-ray emission spectrometer | |
Ahmad et al. | Nuclear spectroscopy with Si PIN diode detectors at room temperature | |
US3102952A (en) | X-ray fluorescence analysis of multi-component systems | |
WO2012130335A1 (en) | Device and method for calibration, linearization and characterization of gamma detectors based on low performance detector materials | |
Ford Jr et al. | A position sensitive proportional detector for a magnetic spectrograph | |
US3351755A (en) | Method of and apparatus for spectroscopic analysis having compensating means for uncontrollable variables | |
Tartoni et al. | Monolithic multi-element HPGe detector equipped with CMOS preamplifiers: Construction and characterization of a demonstrator | |
JPH06123717A (en) | Fluorescent x-ray qualitative analytical method under plurality of conditions | |
JP2004301601A (en) | alpha-RAY MEASURING DEVICE | |
US3290500A (en) | Fast neutron spectrometer utilizing lithium containing films | |
Gils et al. | A 4πβ-γ-coincidence spectrometer using Si (Li) and NaI (Tl) detectors | |
Geller et al. | High count rate electron probe microanalysis | |
González et al. | Performance Comparison of a Large Volume CZT Semiconductor Detector and a LaBr $ _3 $(Ce) Scintillator Detector | |
Gillam et al. | On monitoring a Geiger-counter spectrometer beam | |
Lifshin et al. | X-ray spectral measurement and interpretation | |
Nilsson et al. | Array detectors and extended source used in a double focusing beta spectrometer | |
Bergeson et al. | CMOS-coupled NaI scintillation detector for gamma decay measurements | |
SU1589228A1 (en) | Method of stabilizing energy scale of multiple-detector spectrometric system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SEIKO INSTRUMENTS INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SATOH, MASAO;REEL/FRAME:012981/0273 Effective date: 20020516 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: SII NANOTECHNOLOGY INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SEIKO INSTRUMENTS INC.;REEL/FRAME:015711/0053 Effective date: 20050128 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: HITACHI HIGH-TECH SCIENCE CORPORATION, JAPAN Free format text: CHANGE OF NAME;ASSIGNOR:SII NANOTECHNOLOGY INC.;REEL/FRAME:033817/0078 Effective date: 20130101 |