US20020023675A1 - Solar battery assembly and method of forming a solar battery assembly - Google Patents
Solar battery assembly and method of forming a solar battery assembly Download PDFInfo
- Publication number
- US20020023675A1 US20020023675A1 US09/740,229 US74022900A US2002023675A1 US 20020023675 A1 US20020023675 A1 US 20020023675A1 US 74022900 A US74022900 A US 74022900A US 2002023675 A1 US2002023675 A1 US 2002023675A1
- Authority
- US
- United States
- Prior art keywords
- layer
- solar battery
- battery assembly
- assembly according
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 229910000679 solder Inorganic materials 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000010410 layer Substances 0.000 claims description 258
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000000712 assembly Effects 0.000 description 7
- 238000000429 assembly Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000002390 adhesive tape Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Abstract
A method of forming a solar battery assembly. The method includes the steps of: providing a plurality of spherically-shaped cells, each having a semiconductor layer and an outer electrode layer; forming a solder layer between the plurality of spherically-shaped cells so as to maintain the plurality of spherically-shaped cells in a desired relationship; removing a part of the outer electrode layer to expose a part of the semiconductor layer; and placing an inner electrode in contact with the exposed part of the semiconductor layer.
Description
- 1. Field of the Invention
- This invention relates to solar batteries of the type having spherically-shaped cells. The invention is also directed to a method of forming a solar battery assembly.
- 2. Background Art
- In a conventional solar battery, an internal electrical field is generated between P-N connecting members of a semiconductor layer. Impingement of light upon the solar battery develops electron/electron hole pairs. The electrons collect on the N side, with the electron holes formed on the P side. With an external load connected, electric current flows from the P side toward the N side. Through this process, solar batteries are able to convert light energy into useable electrical energy. In recent years, solar batteries have been made using spherical semiconductors. The spherical semiconductors may be monocrystal or polycrystal silicon, typically with a diameter of less than 1 mm.
- An example of a conventional solar battery using spherical semiconductors is described in Kokai 6-13633 and shown in FIG. 1, herein, at10. The
solar battery 10 consists of an array ofspherical semiconductors 12 which are connected together utilizing aconductive board 14, which in this case is shown to be aluminum foil, or the like. Each of thespherical semiconductors 12 has a primaryconductive skin 16 which envelops a secondaryconductive core 18. Thespherical semiconductors 12 are placed in an opening 20 in theconductive board 14 so as to project fromopposite sides board 14. A portion of theskin 16 is removed from thespherical semiconductor 12 on theside 24 of theboard 14. Aninsulating layer 26 is formed against thecore 18 which is exposed where theexternal skin 16 is removed. A portion of thecore 18 andinsulating layer 26 is removed at 28 so as to form aflat surface 30 which can be connected to a secondaryconductive member 32, which in this case is aluminum foil. Thesurface 30 is connected in a high quality, ohmic manner to theconductive member 32. - It is difficult to maintain a precise relationship between the
semiconductors 12 and theconductive board 14,insulating layers 26, and secondaryconductive member 32 throughout the entire area of thesolar battery 10, particularly with thespherical semiconductors 12 in a high density arrangement. Variation in the relationship of these elements may alter the operating characteristics of thesemiconductors 12 and the performance of thebattery 10. - Further, the manufacture of the
solar battery 10 may involve multiple steps and processes. Manufacture may thus be relatively complicated. As a result, the costs attendant such manufacture may also be high. - Further, in forming an electrode, a contact terminal is needed for both the primary
conductive skin 16 and the secondaryconductive member 32. With the light receiving area being decreased, it may be difficult to construct an effective contact terminal. - In one form, the invention is directed to a method of forming a solar battery assembly. The method includes the steps of: providing a plurality of spherically-shaped cells, each having a semiconductor layer and an outer electrode layer; forming a solder layer between the plurality of spherically-shaped cells so as to maintain the plurality of spherically-shaped cells in a desired relationship; removing a part of the outer electrode layer to expose a part of the semiconductor layer; and placing an inner electrode in contact with the exposed part of the semiconductor layer.
- The method may further include the step of preliminarily maintaining the plurality of spherically-shaped cells in the desired relationship before forming the solder layer.
- In one form, each of the plurality of spherically-shaped cells in the desired relationship has a top side and a diametrically opposite bottom side and the step of preliminarily maintaining the plurality of spherically-shaped cells in the desired relationship involves applying an adhesive layer to the top sides of the plurality of spherically-shaped cells.
- The method may further include the step of aligning the plurality of spherically-shaped cells in the desired relationship on a tray surface before applying the adhesive layer.
- The method may further include the steps of inverting the adhesive layer with the plurality of spherically-shaped cells adhered thereto into a soldering orientation in which the bottom sides of the plurality of spherically-shaped cells are exposed and above the top sides of the plurality of spherically-shaped cells.
- The step of forming a solder layer may involve sprinkling solder particles over the plurality of spherically-shaped cells and into a space between the adhesive layer and the plurality of spherically-shaped cells with the adhesive layer and the plurality of spherically-shaped cells adhered thereto in the soldering orientation.
- The step of forming a solder layer may further involve the steps of liquefying the solder particles in the space between the adhesive layer and the plurality of spherically-shaped cells and thereafter solidifying the liquefied solder particles so that the solder layer connects between the plurality of spherically-shaped cells.
- The method may further include the steps of removing at least a part of the adhesive layer and etching the solder layer from the bottom sides of the plurality of spherically-shaped cells.
- The step of removing a part of the outer electrode layer may involve using the solder layer as a mask while removing the part of the outer electrode layer.
- The semiconductor layer may include a P-type layer and an N-type layer. The method may further include the step of removing a part of one of the N-type and P-type layers to expose a part of the other of the N-type and P-type layers. The step of placing the inner electrode in contact with the exposed part of the semiconductor layer may involve placing the inner electrode in contact with the part of the other of the N-type and P-type layers.
- The outer electrode layer may be a transparent conducting film over the semiconductor layer.
- The step of placing the inner electrode in contact with the exposed part of the semiconductor layer may involve fixing a conductive sheet defining the electrode to the plurality of spherically-shaped cells to thereby maintain the plurality of spherically-shaped cells fixedly in the desired relationship.
- The method may further include the step of forming an insulative layer on the conductive sheet between the plurality of spherically-shaped cells to thereby insulate the inner electrode from the outer electrode layer.
- The method may further include the step of impregnating the exposed part of the semiconductor layer with impurities before placing the inner electrode in contact with the exposed part of the semiconductor layer.
- The method may further include the step of applying an insulative material to the solder layer after etching the solder layer and before removing the part of the outer electrode layer to expose a part of the semiconductor layer.
- The step of applying an insulative layer may involve applying an insulative layer that is a low viscosity insulating resin.
- The insulative layer may be applied as a film, as by spin coating.
- In one form the plurality of spherically-shaped cells are in contact with each other with the spherically-shaped cells in the desired relationship.
- Each of the plurality of spherically-shaped cells may have a spherical core over which the semiconductor layer is applied.
- The spherical core may be made from an insulative material. Alternatively, the spherical core may be made from metal, which may be in electrical contact with the inner electrode.
- One of the N-type and P-type layers may be defined by a spherical core.
- In one form, the solder layer electrically connects between the outer electrodes of the plurality of spherically-shaped cells.
- The invention is also directed to a solar battery having a plurality of cells, a conductive layer fixed to the plurality of cells, and a solder layer. The cells each have a semiconductor layer and an outer electrode layer. The semiconductor layer has a P-type layer and an N-type layer, with there being a part of one of the N-type and P-type layers exposed through the outer electrode layer. The conductive layer is fixed to the plurality of cells in contact with the exposed part of the one of the N-type and P-type layers. The solder layer extends between the conductive layer and the plurality of cells so as to electrically connect between the outer electrodes of the plurality of cells. The solder layer is electrically insulated from the conductive layer.
- The plurality of cells may be spherically-shaped cells.
- In one form, the outer electrode layer is a transparent conducting film.
- The solar battery may further include an insulative layer on the solder layer between the solder layer and the conductive layer.
- In one form, one of the P-type and N-type layers is a silicon sphere and the other of the P-type and N-type layers is a silicon layer on the silicon sphere.
- Each of the plurality of cells may have a metal core. The metal core may be spherically shaped. In one form, the metal core is exposed through the semiconductor layer and in electrical contact with the conductive layer.
- The semiconductor layer may be formed around the metal core.
- The solar battery assembly may further include an insulative layer over the conductive layer which electrically insulates the outer electrode layers from the conductive layer.
- FIG. 1 is a fragmentary, cross-sectional view of a conventional solar battery assembly made using spherical semiconductors;
- FIG. 2 is a perspective view of a solar battery assembly made according to the present invention;
- FIG. 3 is a cross-sectional view of the solar battery assembly, taken along line3-3 of FIG. 2;
- FIGS.4-10 are views as in FIG. 3 and showing the sequential formation of components to produce the solar battery assembly in FIGS. 2 and 3;
- FIG. 11 is a view as in FIG. 3 of a modified form of solar battery assembly, according to the present invention;
- FIG. 12 is a view as in FIG. 8 and showing an additional component which may be added before the steps in FIGS. 9 and 10 are carried out;
- FIG. 13 is a view as in FIG. 11 of a further modified form of solar battery assembly, according to the present invention;
- FIG. 14 is a view as in FIG. 13 of a still further modified form of solar battery assembly, according to the present invention; and
- FIG. 15 is a schematic representation of a system for forming solar battery assemblies, such as those shown in FIGS.2-14, according to the present invention.
- One form of solar battery assembly, according to the present invention, is shown at40 in FIGS. 2 and 3. The
solar battery assembly 40 consists of a conductive sheet/layer 42 having asurface 44 to which a plurality of spherically-shapedcells 46 are applied. Apolyamide insulative film 47 is applied to the surface of the conductive shset/layer 42 facing oppositely to thesurface 44. - Each
cell 46 consists of asemiconductor layer 48 over which anouter electrode layer 50 is applied. Thesemiconductor layer 48 consists of an N-typepolycrystal silicon layer 52 applied over a P-type polycrystal silicon sphere/layer 54. The P-type layer 54 typically has a diameter on the order of 1 mm. Accordingly, a P-N connection is made at the interface between the N-type and P-type layers outer electrode layer 50 is made of transparent isodium tin oxide (ITO). - A portion of the
outer electrode layer 50 and N-type layer 52 is removed in the region at 56 so as to thereby expose the P-type layer 54. The conductive sheet/layer 42 is adhered to thecells 46 in theregion 56 so that the conductive sheet/layer 42 is in contact with the P-type layer 54. - A
solder layer 58 fills a space between the outer electrode layers 50 ofadjacent cells 46 so as to electrically connect between the outer electrode layers 50. - An insulative,
underfill layer 60 is formed between thesolder layer 58 and outer electrode layers 50 and the conductive sheet/layer 42 to electrically isolate thesolder layer 58 from the conductive sheet/layer 42 and prevent shorting between the electrode layers 50 and the conductive sheet/layer 42. - One method of manufacturing the
solar battery assembly 40, according to the present invention, will now be described with respect to FIGS. 4-10. As shown in FIGS. 4 and 5, thecells 46 are initially constructed. P-type polycrystal silicon particles or P-type amorphous silicon particles are dropped while being heated in a vacuum so that polycrystal silicon spherical elements/layers 54 of suitable crystallinity are formed. The N-typepolycrystal silicon layer 52 is formed against the P-type layer 54, as by a CVD method using a mixture of gas, such as silane, containing phosphine. Using the CVD process, a thin film can be formed by supplying and exhausting gas, heated to a desired reaction temperature, as the individual spheres/layers 54 are conveyed through a conduit, such as a narrow tube. Through this same process, the N-type layer 52 can be formed at the same time as the P-type spheres/layers 54 as they are elevated and dropped through an appropriate gas environment. - At the completion of these steps, the
outer electrode layer 50 is formed as an ITO thin film of approximately 1 μm thickness around the exposedsurface 62 of the N-type layer 52. Theelectrode layer 50 may be formed by a sputtering process. - As shown in FIG. 6, the
cells 46, thus formed, are then disposed on asurface 64 of atray 66 in rows and in abutting relationship. Thesurface 64 of thetray 66 may have a square or rectangular shape corresponding to the desired final shape of thesolar battery assembly 40. Thetray 66 can be dimensioned so that thecells 46, within the confines thereof, consistently assume a desired dense, abutting relationship without the requirement for manual alignment thereof. Anadhesive tape 68, having anadhesive layer 70 thereon, is pressed downwardly in the direction of thearrow 72 against the exposedtop sides 74 of thecells 46 arranged in the desired row relationship on thetray surface 64. This preliminarily fixes the desired relationship of thecells 46. - The
adhesive tape 68, with thecells 46 adhered thereto, is lifted to remove thecells 46 from thetray 66 and then inverted to a soldering orientation, as shown in FIG. 7 so that the bottom sides 76 of thecells 46 are exposed. With theadhesive tape 68 andcells 46 in the FIG. 7, soldering orientation,solder particles 78 are directed downwardly in the direction of thearrows 80 over thecells 46 and migrate to aspace 82 defined betweenadjacent cells 46 and theadhesive tape 68. Thesolder particles 78 are then liquefied and solidified within thespace 82 so that asolder layer 58 is formed to electrically connect between the outer electrode layers 50 ofadjacent cells 46. The solidifiedlayer 58 also fixedly maintains the desired relationship between thecells 46. - As shown in FIG. 8, the
adhesive tape 68 is then removed and thesolder layer 58 is etched, as indicated by thearrows 86, from thetop sides 74 of thecells 46, to a desired thickness. - As shown in FIG. 9, with the
solder layer 58 performing the function of a mask, theouter electrode layer 50 and N-type layer 52 are removed in the region at 56 to expose the P-type silicon spheres/layers 54. - As shown in FIG. 10, the
surface 44 of the conductive sheet/layer 42 is adhered, as by thermal compression bonding, to the P-type silicon spheres/layers 54. Theinsulative underfill layer 60 is formed between thesolder layer 58 and thesurface 44 of the conductive sheet/layer 42. Theinsulative underfill layer 60 occupies the space between the exposed edges 88 of the outer electrode layers 50 and thesurface 44 of the conductive sheet/layer 42 so as to prevent shorting between the outer electrode layers 50 and the conductive sheet/layer 42. Theinsulative underfill layer 60 may be formed by pouring a resin material. - The solder in the
layer 58 performs the functions of fixing thecells 46 and also obviates the need for a mask, as is conventionally used during the etching process. - Performance of a photolithography process on spherical silicon may be difficult to perform. The invention, as described above, obviates the need to perform the photolithography process.
- Also, using a flexible conductive sheet/
layer 42, thecells 46 can be fixed together and interconnected to produce a highly reliable ohmic connection. - A specially configured conductive sheet/
layer 42 is not required to make thesolar battery assembly 40 with the desired relationship ofcells 46 in the high density, abutting relationship shown. By forming theinsulative underfill layer 60 after mounting of thecells 46, a predictable and high qualitysolar battery assembly 40 can be produced. Theunderfill layer 60 predictably and reliably insulates between the outer electrode layers 50 and the conductive sheet/layer 42. - The invention also contemplates that P-type impurities can be directed against the
cells 46, as indicated by thearrows 90 in FIG. 9, to produce a high concentration layer, prior to the application of the conductive sheet/layer 42. With this high concentration layer, the ohmic connectivity of the conductive sheet/layer 42 and the P-type sphere/layer 54 can be made highly effective. Additionally, the high concentration layer becomes a barrier to electrons activated by photons, as a result of which a back surface field effect can be obtained resulting in a potentially improved efficiency. - The
tray 66 can be dimensioned so that thecells 46 therein can be spread out predictably in a compact arrangement in contact with each other. The desired relationship between thecells 46 can be consistently maintained. This facilitates construction of high cell density solar battery assemblies. - In FIG. 11, a variation of the inventive process is shown. In FIG. 11 the
insulative underfill layer 60 is formed as an insulating film pattern consisting of polyamide film formed vertically and horizontally so as to conform to thecells 46 nested thereagainst. Thelayer 60 is formed by screen printing on the surface of the conductive sheet/layer 42. The conductive sheet/layer 42 is then fixed by thermal compression bonding in contact with the P-type silicon spheres/layers 54. The conductive sheet/layer 42, on which thelayer 60 in FIG. 11 is applied, may be made from flexible copper foil, or the like. Theinsulative layer 60 in this embodiment effectively insulates between theunited solder layer 58 and outer electrode layers 50 and the conductive sheet/layer 42. - Another variation of the present invention is shown in FIG. 12. After etching of the
solder layer 58 takes place, as shown in FIG. 8, the joinedcells 46 are inverted from the FIG. 8 orientation to that shown in FIG. 12. Aninsulative layer 96 is then applied over theouter surface 98 of thesolder layer 58 and against theouter electrode layer 50. Theinsulative layer 96 may be made from a polyamide resin of low viscosity, which may be applied by spin coating so as to fully cover theouter surface 98 of thesolder layer 58. The remaining steps, previously described, may then be performed, with reference to FIGS. 9 and 10. - Another variation of the present invention is shown in FIG. 13. In FIG. 13, the solar battery assembly is shown at100 with
cells 102, corresponding to thecells 46 formed on the conductive sheet/layer 42. In this embodiment, aspherical metal core 104, made from copper, or the like, is utilized. On the exposedsurface 106 of themetal core 104, a P-typepolycrystal silicon layer 108 and N-typepolycrystal silicon layer 110, corresponding to thelayers surface 106 to make a P-N connection. The P-type and N-type layers type layers - For the conductive sheet/
layer 42 to be electrically connected to themetal core 104, portions of theouter electrode layer 50, the P-type layer 108, and N-type layer 110 are removed in theregion 112. - With this arrangement, low contact resistance with the conductive sheet/
layer 42 can be realized. This construction may also be used to make good series and parallel connection. With a series connection, thecells 102 which reverse the P-layer and N-layer at the outer and inner sides are alternately arranged. By connection in the same manner, a series connector can be formed. - A further variation, according to the present invention, is shown at FIG. 14. In FIG. 14, a solar battery assembly is shown at120 with
spherical cells 122 attached to the conductive sheet/layer 42. Thecells 122 have an insulativespherical core 124 which is surrounded by aconductive layer 126. Thecore 124 may be a 1 mm diameter glass element, with theconductive layer 126 being made from chrome. Thelayer 126 is covered by a semiconductor layer consisting of an N-typeamorphous silicon layer 128 and a P-typeamorphous silicon layer 130. Theouter electrode layer 50 has the composition and construction, previously described. A part of theouter electrode layer 50, the N-type layer 128, and P-type layer 130 can be removed to expose theconductive layer 126. This permits the exposedconductive layer 126 to be bonded directly to the conductive sheet/layer 42 so as to make electrical contact therewith. - The
solar battery 120 can be otherwise constructed, in the manner previously described, to form asolder layer 58 andinsulative underfill layer 60. - The inventive process lends itself to the construction of highly efficient solar batteries, i.e. with good electromotive force per unit area. Also miniaturization of the solar battery assemblies is facilitated.
- The various components of the
solar battery assemblies solar battery assemblies solar battery assemblies - In the embodiments described above, in addition to using polycrystal silicon and amorphous silicon, the use of monocrystal silicon applied to semiconductor layer compounds such as GaAs and GaP is also contemplated. Application to P-I-N structures is also contemplated.
- The foregoing disclosure of specific embodiments is intended to be illustrative of the broad concepts comprehended by the invention.
Claims (34)
1. A method of forming a solar battery assembly, said method comprising the steps of:
providing a plurality of spherically-shaped cells each comprising a semiconductor layer and an outer electrode layer;
forming a solder layer between the plurality of spherically-shaped cells so as to maintain the plurality of spherically-shaped cells in a desired relationship;
removing a part of the outer electrode layer to expose a part of the a semiconductor layer; and
placing an inner electrode in contact with the exposed part of the semiconductor layer.
2. The method of forming a solar battery assembly according to claim 1 further comprising the step of preliminarily maintaining the plurality of spherically-shaped cells in the desired relationship before forming the solder layer.
3. The method of forming a solar battery assembly according to claim 2 wherein each of the plurality of spherically-shaped cells in the desired relationship has a top side and a diametrically opposite bottom side, and the step of preliminarily maintaining the plurality of spherically-shaped cells in the desired relationship comprises the step of applying an adhesive layer to the top sides of the plurality of spherically-shaped cells.
4. The method of forming a solar battery assembly according to claim 3 further comprising the step of aligning the plurality of spherically-shaped cells in the desired relationship on a tray surface before applying the adhesive layer.
5. The method of forming a solar battery assembly according to claim 4 further comprising the steps of inverting the adhesive layer with the plurality of spherically-shaped cells adhered thereto into a soldering orientation in which the bottom sides of the plurality of spherically-shaped cells are exposed and above the top sides of the plurality of spherically-shaped cells.
6. The method of forming a solar battery assembly according to claim 5 wherein the step of forming a solder layer comprises sprinkling solder particles over the plurality of spherically-shaped cells and into a space between the adhesive layer and the plurality of spherically-shaped cells with the adhesive layer and the plurality of spherically-shaped cells adhered thereto in the soldering orientation.
7. The method of forming a solar battery assembly according to claim 6 wherein the step of forming a solder layer further comprises the steps of liquefying the solder particles in the space between the adhesive layer and the plurality of spherically-shaped cells and thereafter solidifying the liquefied solder particles so that the solder layer connects between the plurality of spherically-shaped cells.
8. The method of forming a solar battery assembly according to claim 7 further comprising the steps of removing at least a part of the adhesive layer and etching the solder layer from the bottom sides of the plurality of spherically-shaped cells.
9. The method of forming a solar battery assembly according to claim 8 wherein the step of removing a part of the outer electrode layer comprises using the solder layer as a mask while removing the part of the outer electrode layer.
10. The method of forming a solar battery assembly according to claim 9 wherein the semiconductor layer comprises a P-type layer and an N-type layer and further comprising the step of removing a part of one of the N-type and P-type layers to expose a part of the other of the N-type and P-type layers and the step of placing the inner electrode in contact with the exposed part of the semiconductor layer comprises placing the inner electrode in contact with the part of the other of the N-type and P-type layers.
11. The method of forming a solar battery assembly according to claim 10 wherein the outer electrode layer comprises a transparent conducting film over the semiconductor layer.
12. The method of forming a solar battery assembly according to claim 1 wherein the step of placing the inner electrode in contact with the exposed part of the semiconductor layer comprises fixing a conductive sheet defining the inner electrode to the plurality of spherically-shaped cells to thereby maintain the plurality of spherically-shaped cells fixedly in the desired relationship.
13. The method of forming a solar battery assembly according to claim 12 further comprising the step of forming an insulative layer on the conductive sheet between the plurality of spherically-shaped cells to thereby insulate the inner electrode from the outer electrode layer.
14. The method of forming a solar battery assembly according to claim 1 further comprising the step of impregnating the exposed part of the semiconductor layer with impurities before placing the inner electrode in contact with the exposed part of the semiconductor layer.
15. The method of forming a solar battery assembly according to claim 10 further comprising the step of applying an insulative material to the solder layer after etching the solder layer and before removing the part of the outer electrode layer to expose a part of the semiconductor layer.
16. The method of forming a solar battery assembly according to claim 13 wherein the step of applying an insulative layer comprises applying an insulative layer comprising a low viscosity insulative resin.
17. The method of forming a solar battery assembly according to claim 16 wherein the insulative layer is applied as a film.
18. The method of forming a solar battery assembly according to claim 17 wherein the insulative layer is applied by spin coating.
19. The method of forming a solar battery assembly according to claim 10 wherein the plurality of spherically-shaped cells are in contact with each other with the spherically-shaped cells in the desired relationship.
20. The method of forming a solar battery assembly according to claim 1 wherein each of the plurality of spherically-shaped cells comprises a spherical core over which the semiconductor layer is applied.
21. The method of forming a solar battery assembly according to claim 20 wherein the spherical cores comprise an insulative material.
22. The method of forming a solar battery assembly according to claim 20 wherein the spherical cores comprise metal in electrical contact with the inner electrode.
23. The method of forming a solar battery assembly according to claim 10 wherein one of the N-type and P-type layers comprises a spherical core.
24. The method of forming a solar battery assembly according to claim 7 wherein the solder layer electrically connects between the outer electrodes of the plurality of spherically-shaped cells.
25. A solar battery assembly comprising:
a plurality of cells each comprising a semiconductor layer and an outer electrode layer,
the semiconductor layer comprising a P-type layer and an N-type layer,
there being a part of one of the N-type and P-type layers exposed through the outer electrode layer;
a conductive layer fixed to the plurality of cells in contact with the exposed part of the one of the N-type and P-type layers; and
a solder layer between the conductive layer and the plurality of cells so as to electrically connect between the outer electrodes of the plurality of cells,
the solder layer electrically insulated from the conductive layer.
26. The solar battery assembly according to claim 25 wherein the plurality of cells are spherically-shaped cells.
27. The solar battery assembly according to claim 26 wherein the outer electrode layer comprises a transparent conducting film.
28. The solar battery assembly according to claim 26 further comprising an insulative layer on the solder layer between the solder layer and the conductive layer.
29. The solar battery assembly according to claim 25 wherein one of the P-type and N-type layers comprises a silicon sphere and the other of the P-type and N-type layer comprises a silicon layer on the silicon sphere.
30. The solar battery assembly according to claim 25 wherein each of the plurality of cells comprises a metal core.
31. The solar battery assembly according to claim 30 wherein each metal core has a spherical shape.
32. The solar battery assembly according to claim 30 wherein the metal core is exposed through the semiconductor layer and in electrical contact with the conductive layer.
33. The solar battery assembly according to claim 32 wherein the semiconductor layer is formed around the metal core.
34. The solar battery assembly according to claim 25 further comprising an insulative layer over the conductive layer which electrically insulates the outer electrode layers from the conductive layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35817999A JP3992126B2 (en) | 1999-12-16 | 1999-12-16 | Manufacturing method of solar cell |
JP11-358179 | 1999-12-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020023675A1 true US20020023675A1 (en) | 2002-02-28 |
US6417442B1 US6417442B1 (en) | 2002-07-09 |
Family
ID=18457951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/740,229 Expired - Fee Related US6417442B1 (en) | 1999-12-16 | 2000-12-18 | Solar battery assembly and method of forming a solar battery assembly |
Country Status (2)
Country | Link |
---|---|
US (1) | US6417442B1 (en) |
JP (1) | JP3992126B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6897085B2 (en) | 2003-01-21 | 2005-05-24 | Spheral Solar Power, Inc. | Method of fabricating an optical concentrator for a photovoltaic solar cell |
US20060185715A1 (en) * | 2003-07-25 | 2006-08-24 | Hammerbacher Milfred D | Photovoltaic apparatus including spherical semiconducting particles |
NL2005944C2 (en) * | 2010-12-31 | 2012-07-03 | M H Mensink Beheer B V | Solar panel, solar cell converter and method of manufacturing a solar panel. |
KR101976673B1 (en) * | 2017-12-19 | 2019-05-10 | 한국에너지기술연구원 | Silicon solar cell |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001210843A (en) * | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | Photovoltaic power generating panel and method of manufacturing it |
JP3992126B2 (en) * | 1999-12-16 | 2007-10-17 | 株式会社三井ハイテック | Manufacturing method of solar cell |
JP2002104819A (en) * | 2000-09-28 | 2002-04-10 | Kyocera Corp | Crystalline silicon particle, its manufacturing method and photoelectric converter using crystalline silicon particle |
US6706959B2 (en) * | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
US6563041B2 (en) * | 2000-11-29 | 2003-05-13 | Kyocera Corporation | Photoelectric conversion device |
US6653552B2 (en) * | 2001-02-28 | 2003-11-25 | Kyocera Corporation | Photoelectric conversion device and method of manufacturing the same |
KR20050004005A (en) * | 2003-07-01 | 2005-01-12 | 마츠시타 덴끼 산교 가부시키가이샤 | Mount assembly, optical transmission line and photoelectric circuit board |
AU2006335660B2 (en) * | 2006-01-11 | 2012-01-19 | Sphelar Power Corporation | Semiconductor module for light reception or light emission |
JP2011181534A (en) * | 2010-02-26 | 2011-09-15 | Hitachi Ltd | Spherical compound semiconductor cell and method for manufacturing module |
TW201414054A (en) * | 2012-09-21 | 2014-04-01 | Td Hitech Energy Inc | Connection structure of power storage set |
KR102165004B1 (en) * | 2018-11-06 | 2020-10-13 | (주)소프트피브이 | A photovoltaic particle unit and a transparent solar battery with the unit |
KR102177476B1 (en) * | 2019-02-28 | 2020-11-11 | (주)소프트피브이 | A solar battery module easily connnected in series |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2904613A (en) * | 1957-08-26 | 1959-09-15 | Hoffman Electronics Corp | Large area solar energy converter and method for making the same |
US5091319A (en) * | 1989-07-31 | 1992-02-25 | Hotchkiss Gregory B | Method of affixing silicon spheres to a foil matrix |
KR100377825B1 (en) * | 1996-10-09 | 2003-07-16 | 나가다 죠스게 | Semiconductor device |
CA2269632C (en) * | 1997-08-27 | 2003-09-02 | Josuke Nakata | Spherical semiconductor device and method of manufacturing same |
JP2000216335A (en) * | 1999-01-25 | 2000-08-04 | Seiko Epson Corp | Manufacture of semiconductor device |
JP3992126B2 (en) * | 1999-12-16 | 2007-10-17 | 株式会社三井ハイテック | Manufacturing method of solar cell |
-
1999
- 1999-12-16 JP JP35817999A patent/JP3992126B2/en not_active Expired - Fee Related
-
2000
- 2000-12-18 US US09/740,229 patent/US6417442B1/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6897085B2 (en) | 2003-01-21 | 2005-05-24 | Spheral Solar Power, Inc. | Method of fabricating an optical concentrator for a photovoltaic solar cell |
US7312097B2 (en) | 2003-01-21 | 2007-12-25 | Spheral Solar Power, Inc. | Method of fabricating an optical concentrator for a photovoltaic solar cell |
US20060185715A1 (en) * | 2003-07-25 | 2006-08-24 | Hammerbacher Milfred D | Photovoltaic apparatus including spherical semiconducting particles |
NL2005944C2 (en) * | 2010-12-31 | 2012-07-03 | M H Mensink Beheer B V | Solar panel, solar cell converter and method of manufacturing a solar panel. |
KR101976673B1 (en) * | 2017-12-19 | 2019-05-10 | 한국에너지기술연구원 | Silicon solar cell |
Also Published As
Publication number | Publication date |
---|---|
JP2001177121A (en) | 2001-06-29 |
JP3992126B2 (en) | 2007-10-17 |
US6417442B1 (en) | 2002-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6417442B1 (en) | Solar battery assembly and method of forming a solar battery assembly | |
EP2211389B1 (en) | Solar battery, method for manufacturing solar battery, method for manufacturing solar battery module, and solar battery module | |
JP5067815B2 (en) | Inter-element wiring member, photoelectric conversion element connector, and photoelectric conversion module | |
EP0482511A1 (en) | Integrated photovoltaic device | |
US20100282288A1 (en) | Solar Cell Interconnection on a Flexible Substrate | |
US4454372A (en) | Photovoltaic battery | |
WO1994027327A1 (en) | Series interconnected photovoltaic cells and method for making same | |
JPH09326497A (en) | Solar battery module and its manufacturing method | |
JP3436723B2 (en) | Solar cell manufacturing method and solar cell | |
JP2010157530A (en) | Wiring sheet, solar battery cell with wiring sheet, and solar battery module | |
JP3939082B2 (en) | Manufacturing method of solar cell | |
JP3407131B2 (en) | Method for manufacturing semiconductor device | |
JP2690007B2 (en) | Method for manufacturing an array of solar cells | |
US11575053B2 (en) | Photovoltaic device and solar cell module including same | |
JP3964123B2 (en) | Manufacturing method of solar cell | |
WO2010150749A1 (en) | Solar cell, solar cell with wiring sheet attached, and solar cell module | |
JP2001177132A (en) | Method of cutting globular body, and solar battery using the globular body and method of manufacturing the same | |
JPH09293890A (en) | Solar battery and manufacture thereof | |
JPH0567017U (en) | Solar cell module | |
JP3925770B2 (en) | Manufacturing method of solar cell | |
JP3925766B2 (en) | Manufacturing method of solar cell | |
JP2001185744A (en) | Solar cell and its manufacturing method | |
JP2002111021A (en) | Manufacturing method of solar battery | |
JP3995134B2 (en) | Solar cell manufacturing method and solar cell | |
JPS6230507B2 (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: MITSUI HIGH-TEC, INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FUKUI, ATSUSHI;KIMOTO, KEISUKE;ISHIDA, MIGAKU;REEL/FRAME:012888/0124;SIGNING DATES FROM 20010412 TO 20010416 |
|
CC | Certificate of correction | ||
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Expired due to failure to pay maintenance fee |
Effective date: 20140709 |