US20010042839A1 - Holder assembly system and method in an emitted energy system for photolithography - Google Patents
Holder assembly system and method in an emitted energy system for photolithography Download PDFInfo
- Publication number
- US20010042839A1 US20010042839A1 US09/772,447 US77244701A US2001042839A1 US 20010042839 A1 US20010042839 A1 US 20010042839A1 US 77244701 A US77244701 A US 77244701A US 2001042839 A1 US2001042839 A1 US 2001042839A1
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- Prior art keywords
- diffuser
- nozzle
- housing assembly
- emitted energy
- fluid
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
Definitions
- Photolithographic fabrication of semiconductor components is customary in the semiconductor industry.
- light may be used to cure or harden a photomask that is used to form a pattern of conductive, semiconductive, and insulative components in the semiconductor layer.
- the resulting pattern of conductive, semiconductive, and insulative components on the semiconductor layer form extremely small microelectronic devices, such as transistors, diodes, and the like.
- the microelectronic devices are generally combined to form various semiconductor components.
- the density of the microelectronic devices on the semiconductor layer may be increased by decreasing the size or geometry of the various conductive, semiconductive, and insulative components formed on the semiconductor layer. This decrease in size allows a larger number of such microelectronic devices to be formed on the semiconductor layer. As a result, the computing power and speed of the semiconductor component may be greatly improved.
- the lower limit on the size, often referred to as the linewidth, of a microelectronic device is generally limited by the wavelength of light used in the photolithographic process.
- Semiconductor component fabrication may be further improved by increasing the intensity of the light used in the photolithographic process, which reduces the time the photomask material needs to be radiated with light. Accordingly, the greater the intensity of light used in the photolithographic process, the shorter the time the photomask material is radiated with light. As a result, the semiconductor components may be produced faster and less expensively.
- EUV light has a very short wavelength and is preferable for photolithographic fabrication of semiconductor components.
- Conventional methods of generating EUV light typically include impinging an energy source into a hard target to produce, or radiate, EUV light.
- the energy source may be a high energy laser, electron beam, an electrical arc, or the like.
- the hard target is generally a ceramic, thin-film, or solid target comprising such materials as tungsten, tin, copper, gold, solid xenon, or the like.
- Optics such as mirrors and lenses, are used to reflect and focus the EUV light on the semiconductor layer.
- an improved emitted energy system and method may include a holder assembly for aligning a nozzle and a diffuser.
- the present invention provides a holder assembly system and method that substantially eliminates or reduces problems associated with the prior systems and methods.
- a holder assembly may comprise a nozzle mounting system coupled to a housing assembly to secure a nozzle in the housing.
- a diffuser mounting system may also be coupled to the housing assembly.
- the diffuser mounting system may secure a diffuser in the housing assembly.
- An alignment system may operate to align the nozzle and the diffuser in a spatial relationship with each other to optimize operation Qf the diffuser in relation to the nozzle.
- Conventional alignment systems can use separate holders for the nozzle and the diffuser.
- the separate holders necessitate the shutdown of the energy beam system during maintenance, which is extended due to the time required to align the nozzle and the diffuser.
- conventional alignment systems may not maintain precise alignment between the nozzle and the diffuser during extended periods of operation. The number and extended length of the maintenance operations increases production costs and decreases the production of semiconductor components.
- the present invention provides several technical advantages.
- the invention allows the nozzle and the diffuser to be prealigned and checked rapidly as a subunit prior to installation into a vacuum chamber. Accordingly, the system's downtime and maintenance may be decreased, thereby increasing productivity.
- Another technical advantage of the present invention is that the holder assembly maintains precise alignment between the nozzle and the diffuser over an extended period of operational time.
- a further technical advantage of the present invention is that the holder assembly may include provisions to cool the nozzle and diffuser during operation of the emitted energy system.
- FIG. 1 is a drawing in section with portions broken away illustrating an emitted energy system in accordance with one embodiment of the present invention
- FIG. 1A is a perspective view of a photolithography system interface in accordance with one embodiment of the present invention.
- FIG. 2 is a cross section illustrating a nozzle used in the emitted energy system of FIG. 1 in accordance with one embodiment of the present invention
- FIG. 3 is a cross section illustrating a method of manufacturing used to fabricate very small diameter deep passages, such as a very small diameter deep passage that may be used in the nozzle illustrated in FIG. 2 in accordance with one embodiment of the present invention
- FIG. 4 is a cross section illustrating a diffuser used in the emitted energy system of FIG. 1 in accordance with one embodiment of the present invention
- FIG. 5 is a side view in section with portions broken away illustrating a holder assembly used in the emitted energy system of FIG. 1 in accordance with one embodiment of the present invention.
- FIG. 6 is a rotated side view in section with portions broken away illustrating the holder assembly of FIG. 5 in accordance with one embodiment of the present invention.
- FIGS. 1 through 6 of the drawings like numerals being used for like and corresponding parts of the various drawings.
- FIGS. 1 through 6 illustrate an emitted energy system in accordance with one embodiment of the present invention.
- the emitted energy system may comprise a fluid system and an energy system that interact to produce a beam of emitted energy.
- the emitted energy may be extreme ultra-violet light for use in photolithographic production of microelectronic devices in semiconductor components.
- the extreme ultra-violet light allows the economical fabrication of microelectronic devices having linewidths smaller than 100 nanometers. Accordingly, the emitted energy system increases the number of microelectronic devices that may be placed on a semiconductor layer, thereby increasing the potential computing power and speed of a semiconductor component, such as an integrated circuit chip, memory chip, or the like.
- FIG. 1 is a drawing in section with portions broken away illustrating an emitted energy system 10 in accordance with one embodiment of the present invention.
- the emitted energy system 10 may be used to generate extreme ultra-violet light for use in photolithography. It will be understood that the emitted energy system 10 may be otherwise used without departing from the scope of the present invention.
- the emitted energy system 10 may be used to produce other wave lengths of light and can be used for welding, machining, chemistry, biological research, materials research, communication systems, and the like.
- the emitted energy system 10 comprises a fluid system 12 and an energy system 14 that interact to generate an emitted energy 16 .
- the emitted energy 16 may be collected and directed by an output optics 18 to a target 20 .
- the emitted energy system 10 may include other suitable components without departing from the scope of the present invention.
- the fluid system 12 includes a nozzle 22 and a fluid supply system 24 .
- the fluid system 12 includes the fluid supply system 24 and a subsystem 26 comprising the nozzle 22 , a diffuser 28 , and a holder assembly 30 that maintains the alignment between the nozzle 22 and the diffuser 28 .
- the fluid supply system 24 includes a supply system 32 .
- the supply system 32 operates to supply a fluid 34 to the nozzle 22 .
- the supply system 32 includes a supply tank 36 containing pressurized fluid 34 , connecting lines 38 between the supply tank 36 and the nozzle 22 , and a pressure regulator (not shown).
- the supply system 32 may include other suitable components without departing from the scope of the present invention.
- the supply system 32 may include a flow regulator, a filter, or other suitable devices.
- the pressurized fluid 34 flows through the nozzle 22 and is discharged in a fluid plume 40 .
- the fluid plume 40 is formed within a chamber 42 .
- the chamber 42 may be evacuated to a hard vacuum on the order of one millitorr. It will be understood that the chamber 42 may be otherwise evacuated without departing from the scope of the present invention.
- the fluid 34 is generally gaseous in form as it flows through the nozzle 22 .
- the fluid 34 is a noble gas such as xenon.
- the fluid 34 may be any material or combination of materials that produce the desired emitted energy 16 during the interaction of the fluid system 12 and the energy system 14 without departing from the scope of the present invention.
- the fluid 34 may be iodine, sodium, a noble gas such as argon or helium, or other suitable material.
- the chamber 42 captures the fluid 34 exiting the nozzle 22 .
- the diffuser 28 captures substantially all of the fluid 34 in the fluid plume 40 .
- the holder assembly 30 operates to maintain precise alignment between the nozzle 22 and the diffuser 28 to optimize operation of the diffuser 28 such that the fluid plume 40 is substantially captured by the diffuser 28 . It will be understood that the fluid 34 may be otherwise captured without departing from the scope of the present invention.
- the fluid supply system 24 may also include a recycle system 44 that operates to remove the captured fluid 34 .
- the captured fluid 34 may then be recirculated back to the supply system 32 for reuse.
- the recycle system 44 is connected to the chamber 42 .
- the recycle system 44 is connected to the diffuser 28 and the chamber 42 . It will be understood that the recycle system 44 may be otherwise configured without departing from the scope of the present invention.
- the recycle system 44 includes a chamber pump 46 connected to the chamber 42 to collect and remove the fluid 34 and any contaminates from the chamber 42 .
- the chamber pump 46 may comprise any suitable device or system for evacuating the chamber 42 without departing from the scope of the present invention.
- the chamber pump 46 may be a roughing pump, turbomolecular vacuum pump, cryopump, ion pump, or other suitable pump system or combination thereof.
- the recycle system 44 may include a diffuser pump 48 connected to the diffuser 28 to collect and remove the fluid 34 captured by the diffuser 28 .
- the diffuser pump 48 may comprise any suitable device or system for removing the captured fluid 34 from the diffuser 28 without departing from the scope of the present invention.
- the diffuser pump 48 may be a compressor, circulating pump, or other suitable pump system or combination thereof.
- the recycle system 44 may also include a compressor 50 connected to the chamber pump 46 and/or the diffuser pump 48 .
- the compressor 50 operates to receive the fluid 34 from the chamber pump 46 and/or the diffuser pump 48 , compress the fluid 34 , and then recycle the fluid 34 to the supply system 32 .
- the recycle system 44 may also include a filter system (not shown), a cooling system (not shown), and connecting lines (not shown) between the recycle system 44 and the supply system 32 . It will be understood that the recycle system 44 may comprise other suitable components without departing from the scope of the present invention.
- the fluid supply system 24 may provide pressurized fluid 34 in the form of a gas to the nozzle 22 .
- the pressurized fluid 34 flows through the nozzle 22 .
- the discharge, or exit, of the fluid 34 from the nozzle 22 forms the fluid plume 40 in the chamber 42 .
- the fluid 34 forming the fluid plume 40 is collected and removed by the recycle system 44 .
- the recycle system 44 operates to remove the fluid 34 from the chamber 42 .
- the volume of the fluid 34 discharged from the nozzle 22 is such that the chamber pump 46 operates to maintain an acceptable vacuum within the chamber 42 during operation of the emitted energy system 10 .
- the kinetic energy of the fluid 34 in the fluid plume 40 directs the fluid 34 into the diffuser 28 , allowing the diffuser 28 to capture substantially all of the fluid 34 in the fluid plume 40 .
- the diffuser 28 converts the kinetic energy of the fluid 34 into pressure to reduce the pumping speed requirements of the chamber pump 46 .
- the holder assembly 30 maintains the alignment and position between the nozzle 22 and the diffuser 28 .
- the recycle system 44 may compress, cool, and filter the fluid 34 before returning the fluid 34 to the supply system 32 .
- the fluid 34 may then be circulated back to the nozzle 22 for reuse.
- the fluid flow characteristics of the fluid 34 in the fluid plume 40 are strictly controlled and substantially defined by the design of the nozzle 22 .
- the design of the nozzle 22 generally controls the quantity of the fluid 34 being discharged, the average size of clustered gas atoms or molecules of the fluid 34 in the fluid plume 40 , the velocity of the fluid 34 , and the temperature of the fluid 34 , as well as the size and shape of the fluid plume 40 .
- These flow characteristics may individually and in combination affect the operation of the emitted energy system 10 .
- the fluid 34 discharged from the nozzle 22 may be subsonic or supersonic.
- the fluid 34 in the fluid plume 40 flows at a velocity of approximately Mach 3 .
- the nozzle 22 may be designed to allow the atoms or molecules of the fluid 34 to cluster. Clustering of the fluid 34 increases the average particle size of the clustered atoms or molecules of the fluid 34 in the fluid plume 40 .
- the clustered atoms or molecules of the fluid 34 in the fluid plume 40 may have an optimum cluster size which may increase the quantity of the emitted energy 16 produced during the interaction of the fluid system 12 and the energy system 14 . Accordingly, the efficiency of the emitted energy system 10 is increased. Additionally, the emitted energy system 10 produces a relatively debris-free emitted energy 16 of a particular wavelength, or wavelengths, at an intensity that may be used in photolithography fabrication processes.
- the energy system 14 interacts with the fluid plume 40 within the chamber 42 to produce the emitted energy 16 .
- the recycle system 44 is used to evacuate the chamber 42 to a very low vacuum pressure and to remove any contaminates from the chamber 42 .
- Contaminates may include any atoms, molecules, ions, and material particulate contained within the chamber 42 that may degrade or interfere with the operation of the emitted energy system 10 .
- the energy system 14 may include an energy source 60 and an input optics 62 that are used in connection with the chamber 42 and the fluid plume 40 to generate the emitted energy 16 .
- the energy source 60 and input optics 62 operate to produce an input energy 64 that excites the fluid 34 in the fluid plume 40 into producing the emitted energy 16 .
- the energy source 60 and the input energy 64 are often dependent upon the fluid 34 used in the emitted energy system 10 .
- the fluid 34 comprises xenon and the input energy 64 is a high power laser beam having a wavelength of approximately 1.064 microns
- the emitted energy 16 is extreme ultraviolet light that may be used in photolithography production of semiconductor components.
- the input energy 64 is produced by a Nd:YAG laser. It will be understood that the input energy 64 may be otherwise produced and be any other suitable energy that excites the fluid 34 into producing the desired wavelength(s) of the emitted energy 16 without departing from the scope of the present invention.
- the input energy 64 may be an electric arc, ion or electron beam, coherent light such as a laser beam having different wavelengths, microwaves, or any other suitable energy.
- other types of emitted energy 16 may be generated by the emitted energy system 10 without departing from the scope of the present invention.
- the input energy 64 may be focused through the input optics 62 into the fluid plume 40 to form a plasma 66 that produces the emitted energy 16 .
- the input energy 64 may be directed into the fluid plume 40 such that the quantity of the emitted energy 16 reabsorbed by the fluid 34 is minimized.
- the input energy 64 may be focused on the fluid plume 40 proximate the nozzle 22 such that the distance the emitted energy 16 travels through the fluid plume 40 is minimized.
- Some suitable types of input energy 64 do not require input optics 62 , such as an electric arc. It will be understood that the present invention includes such types of input energy 64 .
- the input optics 62 may be a system of mirrors and lenses that collect, transmit, and focus the input energy 64 into the fluid plume 40 . It will be understood that the input optics 62 may be any suitable device or system for collecting, transmitting, or directing the input energy 64 into the fluid plume 40 without departing from the scope of the present invention.
- the emitted energy 16 may be collected and directed by the output optics 18 to the target 20 .
- the output optics 18 will be arranged proximate the input energy 64 , as the greatest intensity of the emitted energy 16 is produced proximate the input energy 64 .
- the output optics 18 may include a mirror system which substantially surrounds one end of the holder assembly 30 to reflect the emitted energy 16 through a system of mirrors and lenses. It will be understood that the output optics 18 may be any suitable device or system for collecting, transmitting, or directing the emitted energy 16 at the target 20 without departing from the scope of the present invention.
- the target 20 may be any material or system at which the emitted energy 16 is directed.
- the target 20 is a photolithography system interface 68 used in the photolithographic production of electronic devices.
- Other embodiments may utilize the emitted energy 16 in such simple applications as welding or manufacturing, or in such complicated applications as applied physics research, materials research, biological research, communications systems, and the like.
- FIG. 1A is a perspective view of the photolithography system interface 68 according to one embodiment of the present invention.
- the emitted energy system 10 is used in the fabrication of a semiconductor device 70 , such as an integrated circuit (IC), memory chip, application specific integrated circuit (ASIC), or the like.
- IC integrated circuit
- ASIC application specific integrated circuit
- the photolithography system interface 68 may include a mask 72 and a semiconductor target 74 .
- the mask 72 allows only a portion of the emitted energy 16 incident upon the mask 72 to reach the semiconductor target 74 .
- the mask 72 includes a mask pattern 76 such that the portion of the emitted energy 16 which reaches the semiconductor target 74 is in a pattern corresponding to the mask pattern 76 . In other words, by screening the emitted energy 16 incident upon the mask 72 , the mask 72 operates to replicate the mask pattern 76 onto the semiconductor target 74 .
- the mask 72 comprises a mask pattern 76 of reflective regions surrounded by non-reflective regions.
- the emitted energy 16 incident on the non-reflective regions of the mask 72 is screened, while the emitted energy 16 incident on the reflective regions of the mask 72 is reflected to the semiconductor target 74 .
- the mask 72 may comprise other devices or systems for forming a pattern of emitted energy 16 on the semiconductor target 74 without departing from the scope of the present invention.
- the mask 72 may be a one-to-one mask, a de-magnifying mask, a reticle mask, or other suitable mask.
- the semiconductor target 74 may comprise a substrate 78 covered by a photoresist layer 80 .
- the substrate 78 may be a semiconductor such as a wafer formed from a single-crystalline silicon material, an epitaxial semiconductor layer, a polycrystalline semiconductor material, or a metallic such as aluminum, tungsten, or copper, or any other such suitable material. It will be understood that the substrate 78 may comprise other suitable materials and layers without departing from the scope of the present invention.
- the photoresist layer 80 may be any suitable material that reacts to the emitted energy 16 .
- the photoresist layer 80 may react to the emitted energy 16 by curing, hardening, or positive or negative polymerization.
- the photoresist layer 80 comprises Extreme Ultraviolet (EUV) photoresist material. It will be understood that the photoresist layer 80 may be other suitable photo-reacting material without departing from the scope of the present invention.
- EUV Extreme Ultraviolet
- a photoresist mask 82 is formed within the photoresist layer 80 by exposing the photoresist layer 80 to a pattern of emitted energy 16 such that the portion of the photoresist layer 80 exposed to the emitted energy 16 reacts to the emitted energy 16 by curing, hardening, polymerizing, or the like. The unreacted portion of the photoresist layer is then removed, exposing a portion of the underlying substrate 78 . The remaining portion of the photoresist layer 80 forms the photoresist mask 82 .
- a structure 86 may be formed by semiconductor fabrication processes performed on the exposed portions of the underlying substrate 78 , such as wet etching, dry etching, ion implantation, or other suitable semiconductor fabrication processes.
- the structure 86 may be a component of a microelectronic device, such as a gate, source/drain, moat, or the like.
- the structure 86 may be processed to form the semiconductor device 70 .
- the photolithography system interface 68 may include other devices and systems for directing the emitted energy 16 without departing from the scope of the present invention.
- the photolithography system interface 68 may include additional optics, mirrors, or masks, that may affect the pattern of the emitted energy 16 impinging the photoresist layer 80 .
- the photolithography system interface 68 receives the emitted energy 16 from the output optics 18 and directs the emitted energy 16 toward the mask 72 .
- the mask 72 screens the emitted energy 16 such that a pattern of the emitted energy 16 is directed toward the photoresist layer 80 of the semiconductor target 74 .
- the portion of the photoresist layer 80 upon which the emitted energy 16 is incident reacts to the emitted energy 16 .
- the non-reacted portion of the photoresist layer 80 is then removed to expose a portion of the underlying substrate 78 .
- the remaining portion of the photoresist layer 80 forms -the photoresist mask 82 in a pattern corresponding to the mask pattern 76 in the mask 72 .
- Semiconductor fabrication processes such as wet etching, dry etching, ion implantation, or other suitable processes may then be performed on the exposed substrate 78 to form the structure 86 .
- the substrate 78 may be subjected to an ion implantation process such that a source region and a drain region of a transistor is formed.
- the substrate 78 could also be subjected to a plasma-based etch process such as a reactive ion etch (RIE) that anisotropically etches the substrate 78 to form an element of a transistor, such as a gate or a sidewall body.
- RIE reactive ion etch
- the structure 86 may be processed by any suitable semiconductor fabrication process.
- the semiconductor fabrication processes act on the underlying substrate to form the structure 86 , which may comprise portions of microelectronic devices such as transistors, capacitors, diodes, or the like.
- Various microelectronic devices may be combined to form a semiconductor device such as an integrated circuit (IC), memory chip, application specific integrated circuit (ASIC), or other such electronic devices.
- IC integrated circuit
- ASIC application specific integrated circuit
- the emitted energy system allows the economical and debris-free production of an emitted energy.
- the emitted energy is produced in a manner that reduces contamination of the components of the emitted energy system.
- the input and output optics, along with the surfaces of the diffuser, nozzle, chamber, and the holder assembly will not require the same level of maintenance and cleaning as required in conventional systems for producing an emitted energy.
- the fluid used to produce the emitted energy is not damaged or destroyed by operation of the emitted energy system.
- the emitted energy system may be economically produced because the pumping requirements of the recycle system may be reduced. Specifically, the pumping requirements of the chamber pump may be reduced.
- the emitted energy system will preferably produce extreme ultra-violet light at high intensity.
- the high intensity ultra-violet light attainable with the present invention will facilitate the cost effective fabrication of semiconductor devices that have microelectronic device features with linewidths of 100 nanometers or less.
- the emitted energy system will also allow a greater number of microelectronic devices to be placed within the semiconductor device, which will correspondingly increase the computing power and speed of the semiconductor device.
- FIG. 2 is a cross section illustrating the nozzle 22 in accordance with one embodiment of the present invention.
- the nozzle 22 is used to generate the fluid plume 40 .
- the nozzle 22 may be otherwise used without departing from the scope of the present invention.
- the nozzle 22 may be used as a directional steering jet on a space vehicle, a fuel injector for a combustion chamber, an ink jet in an ink jet printer, or any other suitable use.
- the nozzle 22 includes a generally cylindrical nozzle body 100 having an up-stream end 102 and a down-stream end 104 .
- the nozzle body 100 may be tapered adjacent to the down-stream end 104 of the nozzle body 100 to form a nozzle tip 106 .
- the up-stream end 102 of the nozzle body 100 may include a boss 108 for connecting the up-stream end 102 of the nozzle 22 to the supply system 32 .
- the up-stream end 102 may be connected by welding, brazing, hydraulic fittings or other suitable standard hydraulic means to the supply system 32 .
- the nozzle body 100 may be otherwise shaped and configured without departing from the scope of the present invention.
- a nozzle cavity 110 is disposed within the nozzle body 100 between the up-stream end 102 and the down-stream end 104 .
- the nozzle cavity 110 may include an inlet passage 112 defined within the up-stream end 102 of the nozzle cavity 110 .
- the up-stream end 102 of the inlet passage 112 may form an inlet 114 .
- the down-stream end 104 of the inlet passage 112 may form a transition passage 116 .
- the inlet passage 112 , inlet 114 , and the transition passage 116 may include a diverging, converging, or straight passage, or any suitable combination thereof.
- the inlet passage 112 is generally cylindrical and the inlet 114 is straight, or in other words has a constant diameter.
- the transition passage 116 is converging toward the down-stream end 104 . It will be understood that the inlet passage 112 may be otherwise shaped or configured without departing from the scope of the present invention.
- the nozzle cavity 110 also includes a nozzle passage 118 defined within the down-stream end 104 of the nozzle cavity 110 .
- the nozzle passage 118 may have an associated longitudinal length 120 .
- the longitudinal length 120 of the nozzle passage 118 is between 0.1 and 1.0 inches.
- the longitudinal length 120 of the nozzle passage 118 is approximately 0.5 inches.
- the longitudinal length 120 is sized to allow the particles of fluid 34 to cluster. It will be understood that the longitudinal length 120 may be otherwise sized without departing from the scope of the present invention.
- the nozzle passage 118 may also include a taper 122 .
- the taper 122 forms a diverging passage from the up-stream end 102 to the down-stream end 104 of the nozzle cavity 110 .
- the taper 122 may be between 1 and 30 degrees. In a particular embodiment, the taper 122 is approximately 6°. It will be understood that the nozzle passage 118 may be otherwise tapered without departing from the scope of the present invention.
- the taper 122 may be linear, non-linear, symmetric (i.e. conical) or non-symmetric (i.e. rectangular) and may be complex, containing diverging, converging, or straight passages, or any suitable combination thereof.
- the down-stream end 104 of the nozzle passage 118 forms a discharge orifice 124 .
- a diameter or average width 126 is associated with the discharge orifice 124 .
- the associated width 126 of the discharge orifice 124 is less than 0.25 inches.
- the associated width 126 of the discharge orifice 124 is on the order of 0.02 inches. It will be understood that the discharge orifice 124 may be otherwise sized without departing from the scope of the present invention.
- the width 126 of the discharge orifice 124 may be substantially less than the longitudinal length 120 of the nozzle passage 118 . In one embodiment, the width 126 of the discharge orifice 124 is less than the longitudinal length 120 of the nozzle passage 118 by a factor of at least 10 . In a particular embodiment, the width 126 of the discharge orifice 124 is less than the longitudinal length 120 of the nozzle passage 118 by a factor of approximately 20. It will be understood that the longitudinal length 120 of the nozzle passage 118 may be otherwise varied relative to the width 126 of the discharge orifice 124 without departing from the scope of the present invention.
- the transition between the inlet passage 112 and the nozzle passage 118 may form a throat 128 .
- the throat 128 may be a diverging, converging, or straight passage, or any suitable combination thereof.
- the throat 128 has a diameter or average width 130 associated with the throat 128 .
- the throat 128 is a straight passage having a width 130 between 0.002 and 0.030 inches.
- the throat 116 has an average width 130 of approximately 0.008 inches. It will be understood that the throat 128 may be otherwise sized without departing from the scope of the present invention.
- the nozzle passage 118 may be otherwise configured without departing from the scope of the present invention.
- the nozzle passage 118 may include other diverging, converging, or straight passages, or any suitable combination thereof.
- the nozzle passage 118 may be defined, at least in part, by an internal surface 132 of a miniature tube insert 134 .
- the miniature tube insert 134 may be disposed in the nozzle cavity 110 between the inlet passage 112 and the down-stream end 104 of the nozzle body 100 .
- the miniature tube insert 134 may be disposed in a tube passage 136 formed in the nozzle cavity 110 .
- the tube passage 136 may be generally cylindrical in shape to frictionally receive the miniature tube insert 134 .
- the tube passage 136 may have a diameter greater than the width 126 of the discharge orifice 124 in order to form a stop 138 for securing the miniature tube insert 134 in the nozzle body 100 during operation.
- the nozzle cavity 110 may also include a small bore passage 140 fabricated between the tube passage 136 and the down-stream end 104 of the nozzle body 100 . It will be understood that the miniature tube insert 134 and the tube passage 136 may be otherwise fabricated and configured without departing from the scope of the present invention.
- the miniature tube insert 134 is fabricated with a small initial bore (not shown) within the miniature tube insert 134 .
- the small bore passage 140 is similarly fabricated with a small initial bore (not shown).
- the miniature tube insert 134 is then frictionally inserted into the tube passage 136 flush with the stop 138 such that the initial bores are concentrically aligned.
- the concentric passages are then machined together to form the continuous nozzle passage 118 .
- the miniature tube insert 134 is electro-formed by electro-depositing a material on the outside diameter of the miniature tube insert 134 and machining the outside diameter to the specified diameter. The electro-formed miniature tube insert 134 can then be welded to form the nozzle tip 106 .
- the small bore passage 140 and the internal surface 132 of the miniature tube insert 134 are fabricated separately to achieve passage features that may not be achieved using conventional fabrication techniques.
- the miniature tube insert 134 allows fabrication of the relatively long nozzle passage 118 in very small diameter sizes that are not generally obtainable by conventional fabrication techniques.
- the tube passage 136 provides a sufficiently large passage for machining the small bore passage 140 .
- the miniature tube insert 134 may be inserted into the tube passage 136 .
- the miniature tube insert 134 is inserted until the miniature tube insert 134 contacts the stop 138 .
- the miniature tube insert 134 is frictionally secured within the tube passage 136 . It will be understood that the miniature tube insert 134 may be otherwise secured within the tube passage 136 and nozzle cavity 110 without departing from the scope of the present invention.
- the pressurized fluid 34 enters the nozzle 22 at the inlet 114 .
- the fluid 34 flows through the transition passage 116 portion of the inlet passage 112 which may be converging for a short distance.
- the nozzle 22 is generally cooled to help maintain the temperature of the fluid 34 .
- the fluid 34 passes through the throat 128 and into the nozzle passage 118 that is diverging.
- the diverging nozzle passage 118 allows the fluid 34 flowing through the nozzle passage 118 to expand, thereby further decreasing the temperature and pressure of the fluid 34 .
- the density of the fluid 34 flowing through the diverging nozzle passage 118 decreases.
- the longitudinal length 120 of the diverging discharge passage 118 is sufficient to produce clustering of the cooled fluid 34 flowing through the nozzle 22 .
- Clustering is the clumping together of the atoms or molecules in the fluid 34 , thereby increasing the particle size of the individual fluid particles within the clustered fluid 34 forming the fluid plume 40 . This clustering is very important to the successful implementation of the fluid jet as a light-generating source.
- the fluid 34 exits the discharge orifice 124 of the nozzle 22 at a high speed, generally at supersonic velocities. In one embodiment, the velocity of the fluid 34 exiting the discharge orifice 124 is approximately Mach 3.
- the input energy 64 may be directed into the fluid plume 40 to form the plasma 66 .
- the plasma 66 may produce the emitted energy 16 that is collected and directed by the output optics 18 onto the target 20 .
- the nozzle although long and narrow in its internal passage must be very small in its throat diameter or cross-section.
- the nozzle must also be of smooth and regular internal contour so as to allow for unimpeded flow.
- the smaller the nozzle throat the less gas will pass into the vacuum chamber at the required nozzle inlet thermodynamic state, so pumping requirements to maintain proper pressure in the vacuum chamber can be correspondingly reduced.
- the longitudinal length and the taper of the nozzle passage cools the fluid and allows sufficient time for the fluid particles to cluster. Accordingly, the fluid plume may have fluid characteristics that are optimal for producing the emitted energy in response to the input energy.
- the size and shape of the fluid plume are strictly controlled and defined. Accordingly, the optimal location for directing the input energy into the fluid plume can be accurately determined to maximize the intensity of emitted energy produced.
- FIG. 3 is a cross section illustrating a method of manufacturing very small diameter deep passages in accordance with one embodiment of the present invention.
- the method of manufacturing very small diameter deep passages may be used to fabricate passages such as the inlet passage 112 and the nozzle passage 118 of the nozzle 22 which cannot be readily fabricated using conventional machining techniques.
- Such conventional manufacturing techniques include micro-machining, LASER, and Electrical Discharge Machine (EDM) methods as well as electroforming.
- EDM Electrical Discharge Machine
- the method may be used to fabricate other sized passages that are within the spirit and scope of the present invention.
- the method of manufacturing very small diameter deep passages may include providing an article 200 having a first side 202 and a second side 204 .
- a recess 206 may be fabricated in the first side 202 of the article 200 .
- the recess 206 includes a first portion 208 , a second portion 210 , a third portion 212 , and a fourth portion 214 .
- each portion 208 , 210 , 212 , and 214 is a constant diameter passage that is concentric to the other portions.
- the recess 206 may be otherwise configured, including having other shapes, sizes, or configurations without departing from the scope of the present invention.
- the recess 206 may include a single constant diameter passage, a single tapered passage, multiple cylindrical passages that may be concentric, and the like.
- An article passage 216 may be formed between the second side 204 of the article 200 and the recess 206 .
- the article passage 216 may be any shape or size and include parallel or tapered surfaces, contours, or any other detail as required by the application.
- the article passage 216 on the second side 204 of the article 200 may form an orifice 218 having a diameter 219 . Similar to the article passage 216 , the orifice 218 may be any suitable shape or size without departing from the scope of the present invention.
- An insert 220 may be provided that is sized to fit the recess 206 .
- the insert 220 includes a first button 222 , a second button 224 , a third button 226 , and a fourth button 228 , wherein each button is sized to fit a corresponding portion of the recess 206 .
- the insert 220 or the buttons 222 , 224 , 226 , and 228 forming the insert 220 may be otherwise configured including having other shapes or sizes without departing from the scope of the present invention.
- the insert 220 may include one or more buttons of the same or varying size and shape depending upon the size and shape of the recess 206 and upon the application.
- An insert passage 230 may be fabricated in the insert 220 .
- the insert passage 230 may be any shape or size and include parallel or tapered surfaces, contours, or any other detail as required by the application.
- the insert passage 230 may be fabricated in each button.
- the insert passage 23 in each button may vary in size and shape depending upon the application.
- the insert passage 230 is tapered.
- the insert passage 230 is constant in each button 222 , 224 , 226 , and 228 . It will be understood that the insert passage 230 may be other sizes, shapes, or configurations without departing from the scope of the present invention.
- the insert 220 may be securably disposed within the recess 206 of the article 200 .
- each button of the insert 220 is frictionally secured within that portion of the recess 206 corresponding to that particular button.
- the first button 222 is secured within the first portion 208 of the recess 206 with the insert passage 230 in the first button 222 aligned with the article passage 216 in the article 200 .
- the second button 224 is then secured within the second portion 210 of the recess 206 with the insert passage 230 in the second button 224 aligned with the insert passage 230 in the first button 222 .
- the third button 226 is then secured within the third portion 212 of the recess 206 with the insert passage 230 in the third button 226 aligned with the insert passage 230 in the second button 224 .
- the fourth button 228 is secured within the fourth portion 214 of the recess 206 with the insert passage 230 in the fourth button 228 aligned with the insert passage 230 in the third button 226 . It will be understood that the aforementioned process of stacking buttons within the recess may be repeated indefinitely to fabricate any diameter, size, or configuration of passage over an extended length or depth.
- the article passage 216 in the article 200 and the insert passage 230 in the insert 220 may be aligned to form an extended passage 232 that is smaller than can be fabricated using conventional fabrication techniques.
- the method of manufacturing very small diameter deep passages allows a very small diameter passage to be fabricated in an article at depths and with precision that greatly exceed the depths and precision that conventional machining techniques can achieve.
- the method of manufacturing very small diameter deep passages may include fabricating the very small diameter passage such that minute contours and details, which may not be machinable using conventional machining techniques, may be machined into the micro-diameter passage.
- the method of manufacturing very small diameter deep passages is preferably used in situations where long, small cross-section passages having accurate features must be fabricated.
- the initial passages, such as the tube passage may be used to provide sufficient access for coolant, electrolyte, or an EDM wire to fabricate additional internal features.
- FIG. 4 is a cross section illustrating the diffuser 28 in accordance with one embodiment of the present invention.
- the diffuser 28 may be used to substantially capture the fluid plume 40 produced by the nozzle 22 . It will be understood that the diffuser 28 may be otherwise used without departing from the scope of the present invention.
- the diffuser 28 may include a generally cylindrical diffuser body 300 having an inlet end 302 and an outlet end 304 .
- the diffuser body 300 may be tapered adjacent the inlet end 302 of the diffuser body 300 to form a diffuser tip 306 .
- the diffuser body 300 may also include a diffuser boss 308 .
- the diffuser boss 308 may be used to longitudinally position and secure the diffuser 28 within the holder assembly 30 . It will be understood that the diffuser body 300 may be otherwise shaped and configured without departing from the scope of the present invention.
- a diffuser passage 310 is disposed within the diffuser body 300 and extends between the inlet end 302 and the outlet end 304 .
- the inlet end 302 of the diffuser passage 310 may include a diffuser inlet 312 .
- the diffuser inlet 312 may have an associated diameter or average width 314 .
- the width 314 of the diffuser inlet 312 is larger than the width 126 of the discharge orifice 124 in the nozzle 22 illustrated in FIG. 2.
- the width 314 of the diffuser inlet 312 is larger than the width 126 of the discharge orifice 124 by a factor of approximately 10.
- the width 314 of the diffuser inlet 312 is approximately 0.19 inches. It will be understood that the width 314 of the diffuser inlet 312 may be otherwise sized without departing from the scope of the present invention.
- the diffuser passage 310 may also include a diffuser entry passage 316 extending from the diffuser inlet 312 toward the outlet end 304 .
- the diffuser entry passage 316 may include a taper 318 .
- the taper 318 may form a converging, diverging, or straight diffuser entry passage 316 .
- the diffuser entry passage 316 is a diverging passage in that the diameter of the diffuser entry passage 316 increases from the diffuser inlet 312 .
- the taper 318 of the diffuser entry passage 316 is less than 90 degrees.
- the taper 318 of the diffuser entry passage 316 is approximately 30 degrees. It will be understood that the diffuser entry passage 316 may be otherwise configured and internally contoured without departing from the scope of the present invention.
- the diffuser entry passage 316 may have an associated longitudinal length 320 .
- the longitudinal length 320 of the diffuser entry passage 316 is between 0.1 and 2.5 inches. In a particular embodiment, the longitudinal length 320 of the diffuser entry passage 316 is approximately 0.5 inches. It will be understood that the longitudinal length 320 of the diffuser entry passage 316 may be otherwise sized without departing from the scope of the present invention.
- the diffuser passage 310 may also include a center passage 322 extending from the diffuser entry passage 316 to the outlet end 304 of the diffuser passage 310 .
- the center passage 322 may be a converging, diverging, or straight passage.
- the center passage 322 may have an associated diameter or average width 324 .
- the width 324 of the center passage 322 is constant such that the center passage 322 is a straight passage.
- the width 324 of the center passage 322 is between 2 and 10 times larger than the width 314 of the diffuser inlet 312 .
- the width 324 of the center passage 322 is approximately 3 times larger than the width 314 of the diffuser inlet 312 .
- center passage 322 may be otherwise configured and sized without departing from the scope of the present invention. It will be further understood that the diffuser passage 310 may be otherwise configured, including other and different tapered passages without departing from the scope of the present invention.
- the dimensions of the diffuser 28 may be varied substantially depending upon the application.
- the configuration of the diffuser inlet 312 , the longitudinal length 320 and the taper 318 of the diffuser entry passage 316 , and the length and configuration of the center passage 322 may be optimized for each application to obtain desirable recovery of the fluid 34 and to minimize contamination of the chamber 42 .
- the fluid 34 from the fluid plume 40 is substantially captured by the diffuser inlet 312 of the diffuser passage 310 .
- the fluid 34 flows through the diffuser inlet 312 into the diffuser entry passage 316 which is a diverging passage that helps prevent the fluid 34 from back-streaming out of the diffuser passage 310 into the chamber 42 .
- the fluid 34 then flows through the center passage 322 to the outlet end 304 of the diffuser passage 310 where the fluid 34 is removed by the recycle system 44 , as illustrated in FIG. 1.
- the diffuser in combination with the nozzle is configured to utilize the dynamic properties of the fluid to direct the fluid, and other contaminants formed during operation of the emitted energy system, into the diffuser to increase the pressure within the diffuser.
- the increased pressure of the fluid within the diffuser reduces the pumping requirements of the chamber pump. Accordingly, the cost of the emitted energy system may be decreased.
- the diffuser also reduces plasma-induced erosion by capturing contaminants that may contaminate the emitted energy system or condense on optic elements.
- the diffuser maximizes the emitted energy collected and transmitted by the output optics and helps promote stable, continuous system operation.
- FIGS. 5 and 6 are rotated side views in section with portions broken away illustrating a holder assembly 30 in accordance with one embodiment of the present invention.
- the holder assembly 30 operates to restrain and align the diffuser 28 with the nozzle 22 during operation of the emitted energy system 10 . It will be understood that the holder assembly 30 may be otherwise used without departing from the scope of the present invention.
- the holder assembly 30 includes a housing assembly 400 in the configuration of an annular ring having an aperture 402 .
- the housing assembly 400 may include a nozzle end 404 and a diffuser end 406 .
- the housing assembly 400 includes a nozzle receiver 408 and a diffuser receiver 410 coupled together by at least one bolt 412 .
- the housing assembly 400 may include thermal insulation (not shown) between the nozzle receiver 408 and the diffuser receiver 410 . The thermal insulation aids in the precise control of the temperature of both the nozzle receiver 408 and the diffuser receiver 410 .
- the holder assembly 30 may be otherwise configured without departing from the scope of the present invention.
- the housing assembly 400 may be configured as a single piece annular ring, or other suitable configuration.
- a nozzle mounting system 414 may be coupled to the nozzle end 404 of the housing assembly 400 .
- the nozzle mounting system 414 operates to restrain and longitudinally align the nozzle 22 within the housing assembly 400 .
- the nozzle mounting system 414 includes a nozzle bore 416 radially disposed within the nozzle receiver 408 .
- the nozzle 22 is inserted and positioned within the nozzle bore 416 .
- the nozzle mounting system 414 may include a nozzle longitudinal alignment system 418 .
- the nozzle longitudinal alignment system 418 may include a nozzle shim 420 inserted between the housing assembly 400 and the boss 108 illustrated in FIG. 2.
- the nozzle shim 420 provides precise longitudinal positioning of the nozzle 22 within the housing assembly 400 . It will be understood that the nozzle longitudinal alignment system 418 may be otherwise configured without departing from the scope of the present invention.
- the nozzle mounting system 414 may also comprise a nozzle retaining system 422 .
- the nozzle retaining system 422 may comprise a lock nut or a wedge fitting to restrain or lock the nozzle 22 in position within the housing assembly 400 . It will be understood that the nozzle retaining system 422 may comprise other devices or systems for restraining the nozzle 22 in the housing assembly 400 without departing from the scope of the present invention. It will be further understood that the nozzle mounting system 414 may comprise other devices or systems for restraining and aligning the nozzle 22 in the housing assembly 400 without departing from the scope of the present invention.
- a diffuser mounting system 430 may be coupled to the diffuser end 406 of the housing assembly 400 .
- the diffuser mounting system 430 may be any device or system for restraining and longitudinally aligning the diffuser 28 within the housing assembly 400 .
- the diffuser mounting system 430 may include a diffuser bore 432 radially disposed within the diffuser receiver 410 .
- the diffuser 28 is inserted and positioned within diffuser bore 432 .
- the diffuser mounting system 430 may include a diffuser longitudinal alignment system 434 .
- the diffuser longitudinal alignment system 434 may include a diffuser shim 436 inserted between the housing assembly 400 and the diffuser boss 308 .
- the diffuser shim 436 provides precise longitudinal positioning of the diffuser 28 within the housing assembly 400 . It will be understood that the diffuser longitudinal alignment system 434 may be otherwise configured without departing from the scope of the present invention.
- the diffuser mounting system 430 may also include a diffuser retaining system 438 .
- the diffuser retaining system 438 may comprise a lock nut or a wedge fitting to restrain or lock the diffuser 28 in position within the housing assembly 400 .
- the diffuser retaining system 438 may be any device or system for restraining the diffuser 28 in the housing assembly 400 without departing from the scope of the present invention.
- the diffuser mounting system 430 may comprise other devices or systems for restraining and aligning the diffuser 28 in the housing assembly 400 without departing from the scope of the present invention.
- the holder assembly 30 may also include an alignment system 450 that operates to provide spatial alignment between the nozzle 22 and the diffuser 28 to optimize operation of the diffuser 28 .
- the alignment system 450 may include the nozzle longitudinal alignment system 418 and a diffuser longitudinal alignment system 452 , along with a lateral alignment system 452 .
- the lateral alignment system 452 may include shims (not shown) in the nozzle bore 416 , the diffuser bore 432 , and/or between the nozzle receiver 408 and the diffuser receiver 410 .
- the lateral alignment system 452 may also include oversized holes (not shown) used in the housing assembly 400 at each bolt 412 location.
- the lateral alignment system 452 operates to adjust the nozzle 22 and the diffuser 28 such that a flow centerline 454 of the nozzle 22 and the flow centerline 456 of the diffuser 28 are parallel or substantially inline. It will be understood that the lateral alignment system 452 may be otherwise configured without departing from the scope of the present invention. It will be further understood that the alignment system 450 may include other spatial positioning devices and systems without departing from the scope of the present invention.
- the holder assembly 30 may also include a cooling system 458 for maintaining the temperature of the holder assembly 30 precisely within a specified range.
- the cooling system 458 includes a cooling jacket (not shown), connecting lines (not shown), and a refrigeration system (not shown).
- the cooling system 458 circulates a cooling fluid (not shown) through the cooling jacket to cool the housing assembly 400 , the nozzle 22 , and the diffuser 28 .
- the cooling system 458 circulates the cooling fluid through coolant passages 460 within the housing assembly 400 .
- the cooling system 458 individually cools the nozzle receiver 408 and the diffuser receiver 410 . It will be understood that the cooling system 458 may be otherwise configured without departing from the scope of the present invention.
- the holder assembly 30 may also include a radiative heat shield 462 formed within the aperture 402 of the housing assembly 400 .
- the shield 462 may be substantially cylindrical and include a reflective coating that forms a component of the output optics 18 and inhibits radiative heat transfer from the emitted energy 16 to the housing assembly 400 .
- the shield 462 may have a separate cooling line system (not shown) for cooling the radiative heat shield 462 . It will be understood that the shield 462 may be otherwise configured to allow the emitted energy 16 to be reflected while minimally obstructing the collection of the emitted energy 16 during the operation of the emitted energy system 10 .
- An insulator 464 may be disposed between the housing assembly 400 and the shield 462 .
- the shield 462 may have an increased temperature due to the effects of the emitted energy 16 .
- the insulator 464 operates to insulate the housing assembly 400 from the temperature effects of the shield 462 that would otherwise increase the temperature of the housing assembly 400 .
- the insulator 464 comprises a gap between the housing assembly 400 and the shield 462 . It will be understood that the insulator 464 may be comprise other suitable insulating materials and be otherwise formed without departing from the scope of the present invention.
- the holder assembly 30 allows the nozzle 22 and the diffuser 28 to be prealigned as a subsystem 13 .
- the subsystem 13 reduces the system downtime and maintenance and increases productivity, by allowing the subsystem 13 to be replaced as a unit.
- the holder assembly maintains an accurate alignment between the nozzle and diffuser.
- the holder assembly also allows the alignment between the nozzle and the diffuser to be maintained over an extended operational period of time.
- the holder assembly helps protect the nozzle and diffuser from the adverse affects of the emitted energy system, such as radiative heat from the emitted energy.
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Abstract
An emitted energy system for use in photolithography may include a holder assembly operable to precisely align a diffuser and a nozzle. In accordance with one embodiment of the present invention, a holder assembly (30) may comprise a nozzle mounting system (414) coupled to a housing assembly (400) to secure a nozzle (22). A diffuser mounting system (430) may be coupled to the housing assembly (400) to secure a diffuser (28). An alignment system (450) may operate to align the nozzle (22) and the diffuser (28) in a spatial relationship with each other to optimize operation of the diffuser (28) in relation to the nozzle (22).
Description
- Photolithographic fabrication of semiconductor components, such as integrated circuits and dynamic RAM (DRAM) chips, is customary in the semiconductor industry. In photolithographic fabrication, light may be used to cure or harden a photomask that is used to form a pattern of conductive, semiconductive, and insulative components in the semiconductor layer. The resulting pattern of conductive, semiconductive, and insulative components on the semiconductor layer form extremely small microelectronic devices, such as transistors, diodes, and the like. The microelectronic devices are generally combined to form various semiconductor components.
- The density of the microelectronic devices on the semiconductor layer may be increased by decreasing the size or geometry of the various conductive, semiconductive, and insulative components formed on the semiconductor layer. This decrease in size allows a larger number of such microelectronic devices to be formed on the semiconductor layer. As a result, the computing power and speed of the semiconductor component may be greatly improved.
- The lower limit on the size, often referred to as the linewidth, of a microelectronic device is generally limited by the wavelength of light used in the photolithographic process. The shorter the wavelength of light used in the photolithographic process, the smaller the size or linewidth of the microelectronic device that may be formed on the semiconductor layer. Semiconductor component fabrication may be further improved by increasing the intensity of the light used in the photolithographic process, which reduces the time the photomask material needs to be radiated with light. Accordingly, the greater the intensity of light used in the photolithographic process, the shorter the time the photomask material is radiated with light. As a result, the semiconductor components may be produced faster and less expensively.
- Extreme ultra-violet (EUV) light has a very short wavelength and is preferable for photolithographic fabrication of semiconductor components. Conventional methods of generating EUV light typically include impinging an energy source into a hard target to produce, or radiate, EUV light. The energy source may be a high energy laser, electron beam, an electrical arc, or the like. The hard target is generally a ceramic, thin-film, or solid target comprising such materials as tungsten, tin, copper, gold, solid xenon, or the like. Optics, such as mirrors and lenses, are used to reflect and focus the EUV light on the semiconductor layer.
- Conventional energy beam systems and processes suffer from numerous disadvantages. One disadvantage of conventional methods of producing EUV light is that debris from the energy source/target interaction is produced during the production of the EUV light. The production of debris increases with the intensity of the energy source and results in the target being degraded and eventually destroyed. The debris may coat and contaminate the optics and other components of the energy beam system, thereby reducing the efficiency and performance of the system. The reduced performance requires a greater frequency of system maintenance and system downtime.
- Accordingly, a need has arisen for an improved emitted energy system and method. One embodiment of an improved emitted energy system and method may include a holder assembly for aligning a nozzle and a diffuser. The present invention provides a holder assembly system and method that substantially eliminates or reduces problems associated with the prior systems and methods.
- In accordance with the present invention, a holder assembly may comprise a nozzle mounting system coupled to a housing assembly to secure a nozzle in the housing. A diffuser mounting system may also be coupled to the housing assembly. The diffuser mounting system may secure a diffuser in the housing assembly. An alignment system may operate to align the nozzle and the diffuser in a spatial relationship with each other to optimize operation Qf the diffuser in relation to the nozzle.
- Conventional alignment systems can use separate holders for the nozzle and the diffuser. The separate holders necessitate the shutdown of the energy beam system during maintenance, which is extended due to the time required to align the nozzle and the diffuser. In addition, conventional alignment systems may not maintain precise alignment between the nozzle and the diffuser during extended periods of operation. The number and extended length of the maintenance operations increases production costs and decreases the production of semiconductor components.
- The present invention provides several technical advantages. For example, the invention allows the nozzle and the diffuser to be prealigned and checked rapidly as a subunit prior to installation into a vacuum chamber. Accordingly, the system's downtime and maintenance may be decreased, thereby increasing productivity. Another technical advantage of the present invention is that the holder assembly maintains precise alignment between the nozzle and the diffuser over an extended period of operational time. A further technical advantage of the present invention is that the holder assembly may include provisions to cool the nozzle and diffuser during operation of the emitted energy system.
- Other technical advantages will be readily apparent to one skilled in the art from the following figures, descriptions, and claims.
- For a more complete understanding of the present invention, the objects and advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings in which:
- FIG. 1 is a drawing in section with portions broken away illustrating an emitted energy system in accordance with one embodiment of the present invention;
- FIG. 1A is a perspective view of a photolithography system interface in accordance with one embodiment of the present invention;
- FIG. 2 is a cross section illustrating a nozzle used in the emitted energy system of FIG. 1 in accordance with one embodiment of the present invention;
- FIG. 3 is a cross section illustrating a method of manufacturing used to fabricate very small diameter deep passages, such as a very small diameter deep passage that may be used in the nozzle illustrated in FIG. 2 in accordance with one embodiment of the present invention;
- FIG. 4 is a cross section illustrating a diffuser used in the emitted energy system of FIG. 1 in accordance with one embodiment of the present invention;
- FIG. 5 is a side view in section with portions broken away illustrating a holder assembly used in the emitted energy system of FIG. 1 in accordance with one embodiment of the present invention; and
- FIG. 6 is a rotated side view in section with portions broken away illustrating the holder assembly of FIG. 5 in accordance with one embodiment of the present invention.
- The preferred embodiment of the present invention and its advantages are best understood by referring to FIGS. 1 through 6 of the drawings, like numerals being used for like and corresponding parts of the various drawings.
- FIGS. 1 through 6 illustrate an emitted energy system in accordance with one embodiment of the present invention. As described in more detail below, the emitted energy system may comprise a fluid system and an energy system that interact to produce a beam of emitted energy. The emitted energy may be extreme ultra-violet light for use in photolithographic production of microelectronic devices in semiconductor components. The extreme ultra-violet light allows the economical fabrication of microelectronic devices having linewidths smaller than 100 nanometers. Accordingly, the emitted energy system increases the number of microelectronic devices that may be placed on a semiconductor layer, thereby increasing the potential computing power and speed of a semiconductor component, such as an integrated circuit chip, memory chip, or the like.
- FIG. 1 is a drawing in section with portions broken away illustrating an emitted
energy system 10 in accordance with one embodiment of the present invention. In this embodiment, the emittedenergy system 10 may be used to generate extreme ultra-violet light for use in photolithography. It will be understood that the emittedenergy system 10 may be otherwise used without departing from the scope of the present invention. For example, the emittedenergy system 10 may be used to produce other wave lengths of light and can be used for welding, machining, chemistry, biological research, materials research, communication systems, and the like. - Referring to FIG. 1, the emitted
energy system 10 comprises afluid system 12 and anenergy system 14 that interact to generate an emittedenergy 16. The emittedenergy 16 may be collected and directed by anoutput optics 18 to atarget 20. It will be understood that the emittedenergy system 10 may include other suitable components without departing from the scope of the present invention. - In one embodiment, the
fluid system 12 includes anozzle 22 and afluid supply system 24. In another embodiment, thefluid system 12 includes thefluid supply system 24 and asubsystem 26 comprising thenozzle 22, adiffuser 28, and aholder assembly 30 that maintains the alignment between thenozzle 22 and thediffuser 28. - The
fluid supply system 24 includes asupply system 32. Thesupply system 32 operates to supply a fluid 34 to thenozzle 22. In one embodiment, thesupply system 32 includes asupply tank 36 containingpressurized fluid 34, connectinglines 38 between thesupply tank 36 and thenozzle 22, and a pressure regulator (not shown). It will be understood that thesupply system 32 may include other suitable components without departing from the scope of the present invention. For example, thesupply system 32 may include a flow regulator, a filter, or other suitable devices. - The pressurized
fluid 34 flows through thenozzle 22 and is discharged in afluid plume 40. In general, thefluid plume 40 is formed within achamber 42. Thechamber 42 may be evacuated to a hard vacuum on the order of one millitorr. It will be understood that thechamber 42 may be otherwise evacuated without departing from the scope of the present invention. - The
fluid 34 is generally gaseous in form as it flows through thenozzle 22. In one embodiment, the fluid 34 is a noble gas such as xenon. It will be understood that the fluid 34 may be any material or combination of materials that produce the desired emittedenergy 16 during the interaction of thefluid system 12 and theenergy system 14 without departing from the scope of the present invention. For example, the fluid 34 may be iodine, sodium, a noble gas such as argon or helium, or other suitable material. - In one embodiment, the
chamber 42 captures the fluid 34 exiting thenozzle 22. In another embodiment, thediffuser 28 captures substantially all of the fluid 34 in thefluid plume 40. In this embodiment, theholder assembly 30 operates to maintain precise alignment between thenozzle 22 and thediffuser 28 to optimize operation of thediffuser 28 such that thefluid plume 40 is substantially captured by thediffuser 28. It will be understood that the fluid 34 may be otherwise captured without departing from the scope of the present invention. - The
fluid supply system 24 may also include arecycle system 44 that operates to remove the capturedfluid 34. The capturedfluid 34 may then be recirculated back to thesupply system 32 for reuse. In one embodiment, therecycle system 44 is connected to thechamber 42. In another embodiment, therecycle system 44 is connected to thediffuser 28 and thechamber 42. It will be understood that therecycle system 44 may be otherwise configured without departing from the scope of the present invention. - The
recycle system 44 includes achamber pump 46 connected to thechamber 42 to collect and remove the fluid 34 and any contaminates from thechamber 42. It will be understood that thechamber pump 46 may comprise any suitable device or system for evacuating thechamber 42 without departing from the scope of the present invention. For example, thechamber pump 46 may be a roughing pump, turbomolecular vacuum pump, cryopump, ion pump, or other suitable pump system or combination thereof. - In one embodiment, the
recycle system 44 may include adiffuser pump 48 connected to thediffuser 28 to collect and remove the fluid 34 captured by thediffuser 28. It will be understood that thediffuser pump 48 may comprise any suitable device or system for removing the captured fluid 34 from thediffuser 28 without departing from the scope of the present invention. For example, thediffuser pump 48 may be a compressor, circulating pump, or other suitable pump system or combination thereof. - The
recycle system 44 may also include acompressor 50 connected to thechamber pump 46 and/or thediffuser pump 48. Thecompressor 50 operates to receive the fluid 34 from thechamber pump 46 and/or thediffuser pump 48, compress the fluid 34, and then recycle the fluid 34 to thesupply system 32. Therecycle system 44 may also include a filter system (not shown), a cooling system (not shown), and connecting lines (not shown) between therecycle system 44 and thesupply system 32. It will be understood that therecycle system 44 may comprise other suitable components without departing from the scope of the present invention. - In operation, the
fluid supply system 24 may providepressurized fluid 34 in the form of a gas to thenozzle 22. Thepressurized fluid 34 flows through thenozzle 22. The discharge, or exit, of the fluid 34 from thenozzle 22 forms thefluid plume 40 in thechamber 42. The fluid 34 forming thefluid plume 40 is collected and removed by therecycle system 44. - In one embodiment, the
recycle system 44 operates to remove the fluid 34 from thechamber 42. In this embodiment, the volume of the fluid 34 discharged from thenozzle 22 is such that thechamber pump 46 operates to maintain an acceptable vacuum within thechamber 42 during operation of the emittedenergy system 10. - In an embodiment in which the
recycle system 44 is coupled to thediffuser 28, the kinetic energy of the fluid 34 in thefluid plume 40 directs the fluid 34 into thediffuser 28, allowing thediffuser 28 to capture substantially all of the fluid 34 in thefluid plume 40. Thediffuser 28 converts the kinetic energy of the fluid 34 into pressure to reduce the pumping speed requirements of thechamber pump 46. Theholder assembly 30 maintains the alignment and position between thenozzle 22 and thediffuser 28. - The
recycle system 44 may compress, cool, and filter the fluid 34 before returning the fluid 34 to thesupply system 32. The fluid 34 may then be circulated back to thenozzle 22 for reuse. - The fluid flow characteristics of the fluid34 in the
fluid plume 40 are strictly controlled and substantially defined by the design of thenozzle 22. The design of thenozzle 22 generally controls the quantity of the fluid 34 being discharged, the average size of clustered gas atoms or molecules of the fluid 34 in thefluid plume 40, the velocity of the fluid 34, and the temperature of the fluid 34, as well as the size and shape of thefluid plume 40. These flow characteristics may individually and in combination affect the operation of the emittedenergy system 10. - The fluid34 discharged from the
nozzle 22 may be subsonic or supersonic. In one embodiment, the fluid 34 in thefluid plume 40 flows at a velocity of approximately Mach 3. In this embodiment, as discussed in detail below, thenozzle 22 may be designed to allow the atoms or molecules of the fluid 34 to cluster. Clustering of the fluid 34 increases the average particle size of the clustered atoms or molecules of the fluid 34 in thefluid plume 40. The clustered atoms or molecules of the fluid 34 in thefluid plume 40 may have an optimum cluster size which may increase the quantity of the emittedenergy 16 produced during the interaction of thefluid system 12 and theenergy system 14. Accordingly, the efficiency of the emittedenergy system 10 is increased. Additionally, the emittedenergy system 10 produces a relatively debris-free emittedenergy 16 of a particular wavelength, or wavelengths, at an intensity that may be used in photolithography fabrication processes. - As illustrated in FIG. 1, the
energy system 14 interacts with thefluid plume 40 within thechamber 42 to produce the emittedenergy 16. Therecycle system 44 is used to evacuate thechamber 42 to a very low vacuum pressure and to remove any contaminates from thechamber 42. Contaminates may include any atoms, molecules, ions, and material particulate contained within thechamber 42 that may degrade or interfere with the operation of the emittedenergy system 10. - The
energy system 14 may include anenergy source 60 and aninput optics 62 that are used in connection with thechamber 42 and thefluid plume 40 to generate the emittedenergy 16. Theenergy source 60 andinput optics 62 operate to produce aninput energy 64 that excites the fluid 34 in thefluid plume 40 into producing the emittedenergy 16. Theenergy source 60 and theinput energy 64 are often dependent upon the fluid 34 used in the emittedenergy system 10. In an embodiment in which the fluid 34 comprises xenon and theinput energy 64 is a high power laser beam having a wavelength of approximately 1.064 microns, the emittedenergy 16 is extreme ultraviolet light that may be used in photolithography production of semiconductor components. In this embodiment, theinput energy 64 is produced by a Nd:YAG laser. It will be understood that theinput energy 64 may be otherwise produced and be any other suitable energy that excites the fluid 34 into producing the desired wavelength(s) of the emittedenergy 16 without departing from the scope of the present invention. For example, theinput energy 64 may be an electric arc, ion or electron beam, coherent light such as a laser beam having different wavelengths, microwaves, or any other suitable energy. It will be further understood that other types of emittedenergy 16 may be generated by the emittedenergy system 10 without departing from the scope of the present invention. - The
input energy 64 may be focused through theinput optics 62 into thefluid plume 40 to form aplasma 66 that produces the emittedenergy 16. Theinput energy 64 may be directed into thefluid plume 40 such that the quantity of the emittedenergy 16 reabsorbed by the fluid 34 is minimized. Thus, theinput energy 64 may be focused on thefluid plume 40 proximate thenozzle 22 such that the distance the emittedenergy 16 travels through thefluid plume 40 is minimized. Some suitable types ofinput energy 64 do not requireinput optics 62, such as an electric arc. It will be understood that the present invention includes such types ofinput energy 64. - In one embodiment, the
input optics 62 may be a system of mirrors and lenses that collect, transmit, and focus theinput energy 64 into thefluid plume 40. It will be understood that theinput optics 62 may be any suitable device or system for collecting, transmitting, or directing theinput energy 64 into thefluid plume 40 without departing from the scope of the present invention. - The emitted
energy 16 may be collected and directed by theoutput optics 18 to thetarget 20. In general, theoutput optics 18 will be arranged proximate theinput energy 64, as the greatest intensity of the emittedenergy 16 is produced proximate theinput energy 64. In one embodiment, theoutput optics 18 may include a mirror system which substantially surrounds one end of theholder assembly 30 to reflect the emittedenergy 16 through a system of mirrors and lenses. It will be understood that theoutput optics 18 may be any suitable device or system for collecting, transmitting, or directing the emittedenergy 16 at thetarget 20 without departing from the scope of the present invention. - The
target 20 may be any material or system at which the emittedenergy 16 is directed. In one embodiment, thetarget 20 is aphotolithography system interface 68 used in the photolithographic production of electronic devices. Other embodiments may utilize the emittedenergy 16 in such simple applications as welding or manufacturing, or in such complicated applications as applied physics research, materials research, biological research, communications systems, and the like. - FIG. 1A is a perspective view of the
photolithography system interface 68 according to one embodiment of the present invention. In this embodiment, the emittedenergy system 10 is used in the fabrication of asemiconductor device 70, such as an integrated circuit (IC), memory chip, application specific integrated circuit (ASIC), or the like. - The
photolithography system interface 68 may include amask 72 and asemiconductor target 74. Themask 72 allows only a portion of the emittedenergy 16 incident upon themask 72 to reach thesemiconductor target 74. Themask 72 includes amask pattern 76 such that the portion of the emittedenergy 16 which reaches thesemiconductor target 74 is in a pattern corresponding to themask pattern 76. In other words, by screening the emittedenergy 16 incident upon themask 72, themask 72 operates to replicate themask pattern 76 onto thesemiconductor target 74. - In one embodiment, the
mask 72 comprises amask pattern 76 of reflective regions surrounded by non-reflective regions. The emittedenergy 16 incident on the non-reflective regions of themask 72 is screened, while the emittedenergy 16 incident on the reflective regions of themask 72 is reflected to thesemiconductor target 74. It will be understood that themask 72 may comprise other devices or systems for forming a pattern of emittedenergy 16 on thesemiconductor target 74 without departing from the scope of the present invention. For example, themask 72 may be a one-to-one mask, a de-magnifying mask, a reticle mask, or other suitable mask. - The
semiconductor target 74 may comprise asubstrate 78 covered by aphotoresist layer 80. Thesubstrate 78 may be a semiconductor such as a wafer formed from a single-crystalline silicon material, an epitaxial semiconductor layer, a polycrystalline semiconductor material, or a metallic such as aluminum, tungsten, or copper, or any other such suitable material. It will be understood that thesubstrate 78 may comprise other suitable materials and layers without departing from the scope of the present invention. - The
photoresist layer 80 may be any suitable material that reacts to the emittedenergy 16. For example, thephotoresist layer 80 may react to the emittedenergy 16 by curing, hardening, or positive or negative polymerization. in one embodiment, thephotoresist layer 80 comprises Extreme Ultraviolet (EUV) photoresist material. It will be understood that thephotoresist layer 80 may be other suitable photo-reacting material without departing from the scope of the present invention. - A
photoresist mask 82 is formed within thephotoresist layer 80 by exposing thephotoresist layer 80 to a pattern of emittedenergy 16 such that the portion of thephotoresist layer 80 exposed to the emittedenergy 16 reacts to the emittedenergy 16 by curing, hardening, polymerizing, or the like. The unreacted portion of the photoresist layer is then removed, exposing a portion of theunderlying substrate 78. The remaining portion of thephotoresist layer 80 forms thephotoresist mask 82. - A
structure 86 may be formed by semiconductor fabrication processes performed on the exposed portions of theunderlying substrate 78, such as wet etching, dry etching, ion implantation, or other suitable semiconductor fabrication processes. Thestructure 86 may be a component of a microelectronic device, such as a gate, source/drain, moat, or the like. Thestructure 86 may be processed to form thesemiconductor device 70. Thephotolithography system interface 68 may include other devices and systems for directing the emittedenergy 16 without departing from the scope of the present invention. For example, thephotolithography system interface 68 may include additional optics, mirrors, or masks, that may affect the pattern of the emittedenergy 16 impinging thephotoresist layer 80. - In operation, the
photolithography system interface 68 receives the emittedenergy 16 from theoutput optics 18 and directs the emittedenergy 16 toward themask 72. Themask 72 screens the emittedenergy 16 such that a pattern of the emittedenergy 16 is directed toward thephotoresist layer 80 of thesemiconductor target 74. The portion of thephotoresist layer 80 upon which the emittedenergy 16 is incident, reacts to the emittedenergy 16. The non-reacted portion of thephotoresist layer 80 is then removed to expose a portion of theunderlying substrate 78. The remaining portion of thephotoresist layer 80 forms -thephotoresist mask 82 in a pattern corresponding to themask pattern 76 in themask 72. Semiconductor fabrication processes such as wet etching, dry etching, ion implantation, or other suitable processes may then be performed on the exposedsubstrate 78 to form thestructure 86. For example, thesubstrate 78 may be subjected to an ion implantation process such that a source region and a drain region of a transistor is formed. Thesubstrate 78 could also be subjected to a plasma-based etch process such as a reactive ion etch (RIE) that anisotropically etches thesubstrate 78 to form an element of a transistor, such as a gate or a sidewall body. - The
structure 86 may be processed by any suitable semiconductor fabrication process. The semiconductor fabrication processes act on the underlying substrate to form thestructure 86, which may comprise portions of microelectronic devices such as transistors, capacitors, diodes, or the like. Various microelectronic devices may be combined to form a semiconductor device such as an integrated circuit (IC), memory chip, application specific integrated circuit (ASIC), or other such electronic devices. - In short, the emitted energy system allows the economical and debris-free production of an emitted energy. The emitted energy is produced in a manner that reduces contamination of the components of the emitted energy system. For example, the input and output optics, along with the surfaces of the diffuser, nozzle, chamber, and the holder assembly will not require the same level of maintenance and cleaning as required in conventional systems for producing an emitted energy. In addition, the fluid used to produce the emitted energy is not damaged or destroyed by operation of the emitted energy system. Furthermore, the emitted energy system may be economically produced because the pumping requirements of the recycle system may be reduced. Specifically, the pumping requirements of the chamber pump may be reduced.
- In photolithographic applications, the emitted energy system will preferably produce extreme ultra-violet light at high intensity. The high intensity ultra-violet light attainable with the present invention will facilitate the cost effective fabrication of semiconductor devices that have microelectronic device features with linewidths of 100 nanometers or less. The emitted energy system will also allow a greater number of microelectronic devices to be placed within the semiconductor device, which will correspondingly increase the computing power and speed of the semiconductor device.
- FIG. 2 is a cross section illustrating the
nozzle 22 in accordance with one embodiment of the present invention. In this embodiment, thenozzle 22 is used to generate thefluid plume 40. It will be understood that thenozzle 22 may be otherwise used without departing from the scope of the present invention. For example, thenozzle 22 may be used as a directional steering jet on a space vehicle, a fuel injector for a combustion chamber, an ink jet in an ink jet printer, or any other suitable use. - In one embodiment, the
nozzle 22 includes a generallycylindrical nozzle body 100 having an up-stream end 102 and a down-stream end 104. Thenozzle body 100 may be tapered adjacent to the down-stream end 104 of thenozzle body 100 to form anozzle tip 106. The up-stream end 102 of thenozzle body 100 may include aboss 108 for connecting the up-stream end 102 of thenozzle 22 to thesupply system 32. For example, the up-stream end 102 may be connected by welding, brazing, hydraulic fittings or other suitable standard hydraulic means to thesupply system 32. It will be understood that thenozzle body 100 may be otherwise shaped and configured without departing from the scope of the present invention. - A
nozzle cavity 110 is disposed within thenozzle body 100 between the up-stream end 102 and the down-stream end 104. Thenozzle cavity 110 may include aninlet passage 112 defined within the up-stream end 102 of thenozzle cavity 110. The up-stream end 102 of theinlet passage 112 may form aninlet 114. The down-stream end 104 of theinlet passage 112 may form atransition passage 116. Theinlet passage 112,inlet 114, and thetransition passage 116 may include a diverging, converging, or straight passage, or any suitable combination thereof. - In one embodiment, the
inlet passage 112 is generally cylindrical and theinlet 114 is straight, or in other words has a constant diameter. In this embodiment, thetransition passage 116 is converging toward the down-stream end 104. It will be understood that theinlet passage 112 may be otherwise shaped or configured without departing from the scope of the present invention. - The
nozzle cavity 110 also includes anozzle passage 118 defined within the down-stream end 104 of thenozzle cavity 110. Thenozzle passage 118 may have an associatedlongitudinal length 120. In one embodiment, thelongitudinal length 120 of thenozzle passage 118 is between 0.1 and 1.0 inches. In a particular embodiment, thelongitudinal length 120 of thenozzle passage 118 is approximately 0.5 inches. In another embodiment, thelongitudinal length 120 is sized to allow the particles offluid 34 to cluster. It will be understood that thelongitudinal length 120 may be otherwise sized without departing from the scope of the present invention. - The
nozzle passage 118 may also include ataper 122. In one embodiment, thetaper 122 forms a diverging passage from the up-stream end 102 to the down-stream end 104 of thenozzle cavity 110. Thetaper 122 may be between 1 and 30 degrees. In a particular embodiment, thetaper 122 is approximately 6°. It will be understood that thenozzle passage 118 may be otherwise tapered without departing from the scope of the present invention. For example, thetaper 122 may be linear, non-linear, symmetric (i.e. conical) or non-symmetric (i.e. rectangular) and may be complex, containing diverging, converging, or straight passages, or any suitable combination thereof. - The down-
stream end 104 of thenozzle passage 118 forms adischarge orifice 124. A diameter oraverage width 126 is associated with thedischarge orifice 124. In one embodiment, the associatedwidth 126 of thedischarge orifice 124 is less than 0.25 inches. In a particular embodiment, the associatedwidth 126 of thedischarge orifice 124 is on the order of 0.02 inches. It will be understood that thedischarge orifice 124 may be otherwise sized without departing from the scope of the present invention. - In another embodiment, the
width 126 of thedischarge orifice 124 may be substantially less than thelongitudinal length 120 of thenozzle passage 118. In one embodiment, thewidth 126 of thedischarge orifice 124 is less than thelongitudinal length 120 of thenozzle passage 118 by a factor of at least 10. In a particular embodiment, thewidth 126 of thedischarge orifice 124 is less than thelongitudinal length 120 of thenozzle passage 118 by a factor of approximately 20. It will be understood that thelongitudinal length 120 of thenozzle passage 118 may be otherwise varied relative to thewidth 126 of thedischarge orifice 124 without departing from the scope of the present invention. - The transition between the
inlet passage 112 and thenozzle passage 118 may form athroat 128. Thethroat 128 may be a diverging, converging, or straight passage, or any suitable combination thereof. Thethroat 128 has a diameter oraverage width 130 associated with thethroat 128. In one embodiment, thethroat 128 is a straight passage having awidth 130 between 0.002 and 0.030 inches. In a particular embodiment, thethroat 116 has anaverage width 130 of approximately 0.008 inches. It will be understood that thethroat 128 may be otherwise sized without departing from the scope of the present invention. It will be further understood that thenozzle passage 118 may be otherwise configured without departing from the scope of the present invention. For example, thenozzle passage 118 may include other diverging, converging, or straight passages, or any suitable combination thereof. - In accordance with one aspect of the present invention, the
nozzle passage 118 may be defined, at least in part, by aninternal surface 132 of aminiature tube insert 134. Theminiature tube insert 134 may be disposed in thenozzle cavity 110 between theinlet passage 112 and the down-stream end 104 of thenozzle body 100. In particular, theminiature tube insert 134 may be disposed in atube passage 136 formed in thenozzle cavity 110. Thetube passage 136 may be generally cylindrical in shape to frictionally receive theminiature tube insert 134. In addition, thetube passage 136 may have a diameter greater than thewidth 126 of thedischarge orifice 124 in order to form astop 138 for securing theminiature tube insert 134 in thenozzle body 100 during operation. Thenozzle cavity 110 may also include asmall bore passage 140 fabricated between thetube passage 136 and the down-stream end 104 of thenozzle body 100. It will be understood that theminiature tube insert 134 and thetube passage 136 may be otherwise fabricated and configured without departing from the scope of the present invention. - In a particular embodiment, the
miniature tube insert 134 is fabricated with a small initial bore (not shown) within theminiature tube insert 134. Thesmall bore passage 140 is similarly fabricated with a small initial bore (not shown). Theminiature tube insert 134 is then frictionally inserted into thetube passage 136 flush with thestop 138 such that the initial bores are concentrically aligned. The concentric passages are then machined together to form thecontinuous nozzle passage 118. In another embodiment, theminiature tube insert 134 is electro-formed by electro-depositing a material on the outside diameter of theminiature tube insert 134 and machining the outside diameter to the specified diameter. The electro-formedminiature tube insert 134 can then be welded to form thenozzle tip 106. - In an alternative embodiment, the
small bore passage 140 and theinternal surface 132 of theminiature tube insert 134 are fabricated separately to achieve passage features that may not be achieved using conventional fabrication techniques. - Use of the
miniature tube insert 134 allows fabrication of the relativelylong nozzle passage 118 in very small diameter sizes that are not generally obtainable by conventional fabrication techniques. In addition, thetube passage 136 provides a sufficiently large passage for machining thesmall bore passage 140. - Furthermore, conventional fabrication techniques are generally expensive and may not be able to fabricate the
nozzle passage 118 to obtain the desired fluid flow properties. After theminiature tube insert 134 has been fabricated, theminiature tube insert 134 may be inserted into thetube passage 136. In an embodiment in which thestop 138 is formed, theminiature tube insert 134 is inserted until theminiature tube insert 134 contacts thestop 138. In one embodiment, theminiature tube insert 134 is frictionally secured within thetube passage 136. It will be understood that theminiature tube insert 134 may be otherwise secured within thetube passage 136 andnozzle cavity 110 without departing from the scope of the present invention. - In operation, and according to the embodiment illustrated in FIGS. 1 and 2, the
pressurized fluid 34 enters thenozzle 22 at theinlet 114. The fluid 34 flows through thetransition passage 116 portion of theinlet passage 112 which may be converging for a short distance. Thenozzle 22 is generally cooled to help maintain the temperature of the fluid 34. The fluid 34 passes through thethroat 128 and into thenozzle passage 118 that is diverging. The divergingnozzle passage 118 allows the fluid 34 flowing through thenozzle passage 118 to expand, thereby further decreasing the temperature and pressure of the fluid 34. As the temperature and pressure of the fluid 34 decreases, the density of the fluid 34 flowing through the divergingnozzle passage 118 decreases. Thelongitudinal length 120 of the divergingdischarge passage 118 is sufficient to produce clustering of the cooledfluid 34 flowing through thenozzle 22. Clustering is the clumping together of the atoms or molecules in the fluid 34, thereby increasing the particle size of the individual fluid particles within the clusteredfluid 34 forming thefluid plume 40. This clustering is very important to the successful implementation of the fluid jet as a light-generating source. - The fluid34 exits the
discharge orifice 124 of thenozzle 22 at a high speed, generally at supersonic velocities. In one embodiment, the velocity of the fluid 34 exiting thedischarge orifice 124 is approximately Mach 3. Thehigh speed fluid 34 exiting thedischarge orifice 124 and contains the clusteredfluid 34 which forms thefluid plume 40. As discussed previously, theinput energy 64 may be directed into thefluid plume 40 to form theplasma 66. Theplasma 66 may produce the emittedenergy 16 that is collected and directed by theoutput optics 18 onto thetarget 20. - The nozzle, although long and narrow in its internal passage must be very small in its throat diameter or cross-section. The nozzle must also be of smooth and regular internal contour so as to allow for unimpeded flow. The smaller the nozzle throat, the less gas will pass into the vacuum chamber at the required nozzle inlet thermodynamic state, so pumping requirements to maintain proper pressure in the vacuum chamber can be correspondingly reduced. In addition, the longitudinal length and the taper of the nozzle passage cools the fluid and allows sufficient time for the fluid particles to cluster. Accordingly, the fluid plume may have fluid characteristics that are optimal for producing the emitted energy in response to the input energy. Moreover, the size and shape of the fluid plume are strictly controlled and defined. Accordingly, the optimal location for directing the input energy into the fluid plume can be accurately determined to maximize the intensity of emitted energy produced.
- FIG. 3 is a cross section illustrating a method of manufacturing very small diameter deep passages in accordance with one embodiment of the present invention. The method of manufacturing very small diameter deep passages may be used to fabricate passages such as the
inlet passage 112 and thenozzle passage 118 of thenozzle 22 which cannot be readily fabricated using conventional machining techniques. Such conventional manufacturing techniques include micro-machining, LASER, and Electrical Discharge Machine (EDM) methods as well as electroforming. In addition to manufacturing very small diameter deep passages, the method may be used to fabricate other sized passages that are within the spirit and scope of the present invention. - Referring to FIG. 3, the method of manufacturing very small diameter deep passages may include providing an
article 200 having afirst side 202 and asecond side 204. Arecess 206 may be fabricated in thefirst side 202 of thearticle 200. In one embodiment and as illustrated in FIG. 3, therecess 206 includes afirst portion 208, asecond portion 210, athird portion 212, and afourth portion 214. In this embodiment, eachportion recess 206 may be otherwise configured, including having other shapes, sizes, or configurations without departing from the scope of the present invention. Thus, therecess 206 may include a single constant diameter passage, a single tapered passage, multiple cylindrical passages that may be concentric, and the like. - An
article passage 216 may be formed between thesecond side 204 of thearticle 200 and therecess 206. Thearticle passage 216 may be any shape or size and include parallel or tapered surfaces, contours, or any other detail as required by the application. Thearticle passage 216 on thesecond side 204 of thearticle 200 may form anorifice 218 having adiameter 219. Similar to thearticle passage 216, theorifice 218 may be any suitable shape or size without departing from the scope of the present invention. - An
insert 220 may be provided that is sized to fit therecess 206. For the embodiment illustrated in FIG. 3, theinsert 220 includes afirst button 222, asecond button 224, athird button 226, and afourth button 228, wherein each button is sized to fit a corresponding portion of therecess 206. It will be understood that theinsert 220 or thebuttons insert 220 may be otherwise configured including having other shapes or sizes without departing from the scope of the present invention. Thus, theinsert 220 may include one or more buttons of the same or varying size and shape depending upon the size and shape of therecess 206 and upon the application. - An
insert passage 230 may be fabricated in theinsert 220. Theinsert passage 230 may be any shape or size and include parallel or tapered surfaces, contours, or any other detail as required by the application. In applications where theinsert 220 includes one or more buttons, theinsert passage 230 may be fabricated in each button. The insert passage 23 in each button may vary in size and shape depending upon the application. For example, in one embodiment theinsert passage 230 is tapered. In another embodiment and as illustrated in FIG. 3, theinsert passage 230 is constant in eachbutton insert passage 230 may be other sizes, shapes, or configurations without departing from the scope of the present invention. - The
insert 220 may be securably disposed within therecess 206 of thearticle 200. For the embodiment illustrated in FIG. 3, each button of theinsert 220 is frictionally secured within that portion of therecess 206 corresponding to that particular button. In particular, thefirst button 222 is secured within thefirst portion 208 of therecess 206 with theinsert passage 230 in thefirst button 222 aligned with thearticle passage 216 in thearticle 200. Thesecond button 224 is then secured within thesecond portion 210 of therecess 206 with theinsert passage 230 in thesecond button 224 aligned with theinsert passage 230 in thefirst button 222. Similarly, thethird button 226 is then secured within thethird portion 212 of therecess 206 with theinsert passage 230 in thethird button 226 aligned with theinsert passage 230 in thesecond button 224. Likewise, thefourth button 228 is secured within thefourth portion 214 of therecess 206 with theinsert passage 230 in thefourth button 228 aligned with theinsert passage 230 in thethird button 226. It will be understood that the aforementioned process of stacking buttons within the recess may be repeated indefinitely to fabricate any diameter, size, or configuration of passage over an extended length or depth. - The
article passage 216 in thearticle 200 and theinsert passage 230 in theinsert 220 may be aligned to form anextended passage 232 that is smaller than can be fabricated using conventional fabrication techniques. - In short, the method of manufacturing very small diameter deep passages allows a very small diameter passage to be fabricated in an article at depths and with precision that greatly exceed the depths and precision that conventional machining techniques can achieve. In addition, the method of manufacturing very small diameter deep passages may include fabricating the very small diameter passage such that minute contours and details, which may not be machinable using conventional machining techniques, may be machined into the micro-diameter passage. The method of manufacturing very small diameter deep passages is preferably used in situations where long, small cross-section passages having accurate features must be fabricated. The initial passages, such as the tube passage, may be used to provide sufficient access for coolant, electrolyte, or an EDM wire to fabricate additional internal features.
- FIG. 4 is a cross section illustrating the
diffuser 28 in accordance with one embodiment of the present invention. In this embodiment, thediffuser 28 may be used to substantially capture thefluid plume 40 produced by thenozzle 22. It will be understood that thediffuser 28 may be otherwise used without departing from the scope of the present invention. - In one embodiment, the
diffuser 28 may include a generallycylindrical diffuser body 300 having aninlet end 302 and anoutlet end 304. Thediffuser body 300 may be tapered adjacent theinlet end 302 of thediffuser body 300 to form adiffuser tip 306. Thediffuser body 300 may also include adiffuser boss 308. Thediffuser boss 308 may be used to longitudinally position and secure thediffuser 28 within theholder assembly 30. It will be understood that thediffuser body 300 may be otherwise shaped and configured without departing from the scope of the present invention. - A
diffuser passage 310 is disposed within thediffuser body 300 and extends between theinlet end 302 and theoutlet end 304. Theinlet end 302 of thediffuser passage 310 may include adiffuser inlet 312. Thediffuser inlet 312 may have an associated diameter oraverage width 314. In general, thewidth 314 of thediffuser inlet 312 is larger than thewidth 126 of thedischarge orifice 124 in thenozzle 22 illustrated in FIG. 2. In one embodiment, thewidth 314 of thediffuser inlet 312 is larger than thewidth 126 of thedischarge orifice 124 by a factor of approximately 10. In another embodiment, thewidth 314 of thediffuser inlet 312 is approximately 0.19 inches. It will be understood that thewidth 314 of thediffuser inlet 312 may be otherwise sized without departing from the scope of the present invention. - The
diffuser passage 310 may also include adiffuser entry passage 316 extending from thediffuser inlet 312 toward theoutlet end 304. Thediffuser entry passage 316 may include ataper 318. Thetaper 318 may form a converging, diverging, or straightdiffuser entry passage 316. In one embodiment, thediffuser entry passage 316 is a diverging passage in that the diameter of thediffuser entry passage 316 increases from thediffuser inlet 312. In this embodiment, thetaper 318 of thediffuser entry passage 316 is less than 90 degrees. In a particular embodiment, thetaper 318 of thediffuser entry passage 316 is approximately 30 degrees. It will be understood that thediffuser entry passage 316 may be otherwise configured and internally contoured without departing from the scope of the present invention. - The
diffuser entry passage 316 may have an associatedlongitudinal length 320. In one embodiment, thelongitudinal length 320 of thediffuser entry passage 316 is between 0.1 and 2.5 inches. In a particular embodiment, thelongitudinal length 320 of thediffuser entry passage 316 is approximately 0.5 inches. It will be understood that thelongitudinal length 320 of thediffuser entry passage 316 may be otherwise sized without departing from the scope of the present invention. - The
diffuser passage 310 may also include acenter passage 322 extending from thediffuser entry passage 316 to theoutlet end 304 of thediffuser passage 310. Thecenter passage 322 may be a converging, diverging, or straight passage. Thecenter passage 322 may have an associated diameter oraverage width 324. In one embodiment, thewidth 324 of thecenter passage 322 is constant such that thecenter passage 322 is a straight passage. In this embodiment, thewidth 324 of thecenter passage 322 is between 2 and 10 times larger than thewidth 314 of thediffuser inlet 312. In a particular embodiment, thewidth 324 of thecenter passage 322 is approximately 3 times larger than thewidth 314 of thediffuser inlet 312. It will be understood that thecenter passage 322 may be otherwise configured and sized without departing from the scope of the present invention. It will be further understood that thediffuser passage 310 may be otherwise configured, including other and different tapered passages without departing from the scope of the present invention. - The dimensions of the
diffuser 28 may be varied substantially depending upon the application. In particular, the configuration of thediffuser inlet 312, thelongitudinal length 320 and thetaper 318 of thediffuser entry passage 316, and the length and configuration of thecenter passage 322 may be optimized for each application to obtain desirable recovery of the fluid 34 and to minimize contamination of thechamber 42. - In operation, and as illustrated in FIGS. 1 and 4, the fluid34 from the
fluid plume 40 is substantially captured by thediffuser inlet 312 of thediffuser passage 310. The fluid 34 flows through thediffuser inlet 312 into thediffuser entry passage 316 which is a diverging passage that helps prevent the fluid 34 from back-streaming out of thediffuser passage 310 into thechamber 42. The fluid 34 then flows through thecenter passage 322 to theoutlet end 304 of thediffuser passage 310 where the fluid 34 is removed by therecycle system 44, as illustrated in FIG. 1. - In short, the diffuser in combination with the nozzle is configured to utilize the dynamic properties of the fluid to direct the fluid, and other contaminants formed during operation of the emitted energy system, into the diffuser to increase the pressure within the diffuser. The increased pressure of the fluid within the diffuser reduces the pumping requirements of the chamber pump. Accordingly, the cost of the emitted energy system may be decreased. The diffuser also reduces plasma-induced erosion by capturing contaminants that may contaminate the emitted energy system or condense on optic elements. Furthermore, the diffuser maximizes the emitted energy collected and transmitted by the output optics and helps promote stable, continuous system operation.
- FIGS. 5 and 6 are rotated side views in section with portions broken away illustrating a
holder assembly 30 in accordance with one embodiment of the present invention. Theholder assembly 30 operates to restrain and align thediffuser 28 with thenozzle 22 during operation of the emittedenergy system 10. It will be understood that theholder assembly 30 may be otherwise used without departing from the scope of the present invention. - In one embodiment, the
holder assembly 30 includes ahousing assembly 400 in the configuration of an annular ring having anaperture 402. Thehousing assembly 400 may include anozzle end 404 and adiffuser end 406. In one embodiment, thehousing assembly 400 includes anozzle receiver 408 and adiffuser receiver 410 coupled together by at least onebolt 412. In this embodiment, thehousing assembly 400 may include thermal insulation (not shown) between thenozzle receiver 408 and thediffuser receiver 410. The thermal insulation aids in the precise control of the temperature of both thenozzle receiver 408 and thediffuser receiver 410. It will be understood that theholder assembly 30 may be otherwise configured without departing from the scope of the present invention. For example, thehousing assembly 400 may be configured as a single piece annular ring, or other suitable configuration. - A
nozzle mounting system 414 may be coupled to thenozzle end 404 of thehousing assembly 400. Thenozzle mounting system 414 operates to restrain and longitudinally align thenozzle 22 within thehousing assembly 400. In one embodiment, thenozzle mounting system 414 includes anozzle bore 416 radially disposed within thenozzle receiver 408. In this embodiment, thenozzle 22 is inserted and positioned within the nozzle bore 416. - The
nozzle mounting system 414 may include a nozzlelongitudinal alignment system 418. The nozzlelongitudinal alignment system 418 may include anozzle shim 420 inserted between thehousing assembly 400 and theboss 108 illustrated in FIG. 2. Thenozzle shim 420 provides precise longitudinal positioning of thenozzle 22 within thehousing assembly 400. It will be understood that the nozzlelongitudinal alignment system 418 may be otherwise configured without departing from the scope of the present invention. - The
nozzle mounting system 414 may also comprise anozzle retaining system 422. In one embodiment, thenozzle retaining system 422 may comprise a lock nut or a wedge fitting to restrain or lock thenozzle 22 in position within thehousing assembly 400. It will be understood that thenozzle retaining system 422 may comprise other devices or systems for restraining thenozzle 22 in thehousing assembly 400 without departing from the scope of the present invention. It will be further understood that thenozzle mounting system 414 may comprise other devices or systems for restraining and aligning thenozzle 22 in thehousing assembly 400 without departing from the scope of the present invention. - A
diffuser mounting system 430 may be coupled to thediffuser end 406 of thehousing assembly 400. Thediffuser mounting system 430 may be any device or system for restraining and longitudinally aligning thediffuser 28 within thehousing assembly 400. In one embodiment, thediffuser mounting system 430 may include adiffuser bore 432 radially disposed within thediffuser receiver 410. In this embodiment, thediffuser 28 is inserted and positioned withindiffuser bore 432. - The
diffuser mounting system 430 may include a diffuserlongitudinal alignment system 434. The diffuserlongitudinal alignment system 434 may include adiffuser shim 436 inserted between thehousing assembly 400 and thediffuser boss 308. Thediffuser shim 436 provides precise longitudinal positioning of thediffuser 28 within thehousing assembly 400. It will be understood that the diffuserlongitudinal alignment system 434 may be otherwise configured without departing from the scope of the present invention. - The
diffuser mounting system 430 may also include adiffuser retaining system 438. In one embodiment, thediffuser retaining system 438 may comprise a lock nut or a wedge fitting to restrain or lock thediffuser 28 in position within thehousing assembly 400. It will be understood that thediffuser retaining system 438 may be any device or system for restraining thediffuser 28 in thehousing assembly 400 without departing from the scope of the present invention. It will be further understood that thediffuser mounting system 430 may comprise other devices or systems for restraining and aligning thediffuser 28 in thehousing assembly 400 without departing from the scope of the present invention. - The
holder assembly 30 may also include analignment system 450 that operates to provide spatial alignment between thenozzle 22 and thediffuser 28 to optimize operation of thediffuser 28. Thealignment system 450 may include the nozzlelongitudinal alignment system 418 and a diffuserlongitudinal alignment system 452, along with alateral alignment system 452. - In one embodiment, the
lateral alignment system 452 may include shims (not shown) in the nozzle bore 416, the diffuser bore 432, and/or between thenozzle receiver 408 and thediffuser receiver 410. Thelateral alignment system 452 may also include oversized holes (not shown) used in thehousing assembly 400 at eachbolt 412 location. Thelateral alignment system 452 operates to adjust thenozzle 22 and thediffuser 28 such that aflow centerline 454 of thenozzle 22 and theflow centerline 456 of thediffuser 28 are parallel or substantially inline. It will be understood that thelateral alignment system 452 may be otherwise configured without departing from the scope of the present invention. It will be further understood that thealignment system 450 may include other spatial positioning devices and systems without departing from the scope of the present invention. - The
holder assembly 30 may also include acooling system 458 for maintaining the temperature of theholder assembly 30 precisely within a specified range. In one embodiment, thecooling system 458 includes a cooling jacket (not shown), connecting lines (not shown), and a refrigeration system (not shown). In this embodiment, thecooling system 458 circulates a cooling fluid (not shown) through the cooling jacket to cool thehousing assembly 400, thenozzle 22, and thediffuser 28. In another embodiment, thecooling system 458 circulates the cooling fluid throughcoolant passages 460 within thehousing assembly 400. In a particular embodiment, thecooling system 458 individually cools thenozzle receiver 408 and thediffuser receiver 410. It will be understood that thecooling system 458 may be otherwise configured without departing from the scope of the present invention. - The
holder assembly 30 may also include aradiative heat shield 462 formed within theaperture 402 of thehousing assembly 400. In one embodiment, theshield 462 may be substantially cylindrical and include a reflective coating that forms a component of theoutput optics 18 and inhibits radiative heat transfer from the emittedenergy 16 to thehousing assembly 400. Theshield 462 may have a separate cooling line system (not shown) for cooling theradiative heat shield 462. It will be understood that theshield 462 may be otherwise configured to allow the emittedenergy 16 to be reflected while minimally obstructing the collection of the emittedenergy 16 during the operation of the emittedenergy system 10. - An
insulator 464 may be disposed between thehousing assembly 400 and theshield 462. Theshield 462 may have an increased temperature due to the effects of the emittedenergy 16. Theinsulator 464 operates to insulate thehousing assembly 400 from the temperature effects of theshield 462 that would otherwise increase the temperature of thehousing assembly 400. In one embodiment, theinsulator 464 comprises a gap between thehousing assembly 400 and theshield 462. It will be understood that theinsulator 464 may be comprise other suitable insulating materials and be otherwise formed without departing from the scope of the present invention. - The
holder assembly 30 allows thenozzle 22 and thediffuser 28 to be prealigned as a subsystem 13. The subsystem 13 reduces the system downtime and maintenance and increases productivity, by allowing the subsystem 13 to be replaced as a unit. - In short, the holder assembly maintains an accurate alignment between the nozzle and diffuser. The holder assembly also allows the alignment between the nozzle and the diffuser to be maintained over an extended operational period of time. In addition, the holder assembly helps protect the nozzle and diffuser from the adverse affects of the emitted energy system, such as radiative heat from the emitted energy.
- Although the present invention has been described with several embodiments, various changes and modifications may be suggested to one skilled in the art. It is intended that the present invention encompass such changes and modifications as fall within the scope of the present appended claims.
Claims (20)
1. A holder assembly comprising:
a nozzle mounting system coupled to a housing assembly to secure a nozzle;
a diffuser mounting system coupled to the housing assembly to secure a diffuser; and
an alignment system operable to align the nozzle and the diffuser in spatial relationship with each other to optimize operation of the diffuser in relation to the nozzle.
2. The holder assembly of , the nozzle maintaining system comprising a nozzle shim disposed between the nozzle and the housing assembly to vary a longitudinal spatial relationship of the nozzle in relation to the housing assembly.
claim 1
3. The holder assembly of , the diffuser mounting system comprising a diffuser shim disposed between the diffuser and the housing assembly to vary a longitudinal spatial relationship of the diffuser in relation to the housing assembly.
claim 1
4. The holder assembly of , the alignment system comprising a lateral adjustment system coupled to the housing assembly, the lateral adjustment system operable to adjust a lateral spatial relationship between the nozzle and the diffuser.
claim 1
5. The holder assembly of , the housing assembly further comprising a nozzle receiver and a diffuser receiver that forms, at least in part, the lateral adjustment system.
claim 4
6. The holder assembly of , the housing assembly comprising an annular ring having an aperture.
claim 1
7. The holder assembly of , wherein the nozzle and diffuser are radially disposed within the annular ring opposite of one another.
claim 6
8. The holder assembly of , further comprising a radiative heat shield disposed within the aperture.
claim 6
9. The holder assembly of , further comprising an insulator disposed between the radiative heat shield and the aperture of the housing assembly.
claim 8
10. The holder assembly of , further comprising a cooling system operable to cool the housing assembly.
claim 1
11. A semiconductor device fabricated with an emitted energy system, the emitted beam system comprising:
an energy system and a fluid system that interact to produce an emitted energy, the emitted energy directed at a photolithography system interface to produce the semiconductor device;
wherein the fluid system includes a holder assembly to align and secure a nozzle with a diffuser, the holder assembly comprising:
a nozzle mounting system coupled to a housing assembly to secure the nozzle;
a diffuser mounting system coupled to the housing assembly to secure the diffuser; and
an alignment system operable to align the nozzle and the diffuser in spatial relationship with each other to optimize operation of the diffuser in relation to the nozzle.
12. The emitted energy system of , the alignment system comprising a lateral adjustment system operable to spatially align a centerline of the nozzle with a centerline of the diffuser.
claim 11
13. The emitted energy system of , the housing assembly comprising an upper receiver and a lower receiver that forms, at least in part, the lateral adjustment system.
claim 12
14. The emitted energy system of , the housing assembly further comprising an aperture.
claim 11
15. The emitted energy system of , further comprising a radiative heat shield disposed within the aperture.
claim 14
16. The emitted energy system of , wherein the nozzle and the diffuser are radially disposed within the housing assembly opposite one another.
claim 14
17. A method of manufacturing a holder assembly to align and secure a nozzle and a diffuser, the method comprising the steps of:
providing a housing assembly;
fabricating a nozzle mounting system in the housing assembly, the nozzle mounting system having a nozzle restraining system;
fabricating a diffuser mounting system in the housing assembly, the diffuser mounting system having a diffuser restraining system; and
forming an aperture within the housing assembly.
18. The method of , further comprising the step of fabricating an alignment system in the housing assembly, the alignment system operable to vary the spatial relationship between the nozzle and the diffuser.
claim 17
19. The method of , further comprising the step of forming an insulator within the housing assembly, the insulator substantially surrounding the aperture.
claim 17
20. The method of , wherein the step of providing the housing assembly comprises the step of providing a housing assembly having an upper receiver and a lower receiver.
claim 17
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US09/772,447 US6353232B2 (en) | 1998-04-03 | 2001-01-29 | Holder assembly system and method in an emitted energy system for photolithography |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/055,035 US6180952B1 (en) | 1998-04-03 | 1998-04-03 | Holder assembly system and method in an emitted energy system for photolithography |
US09/772,447 US6353232B2 (en) | 1998-04-03 | 2001-01-29 | Holder assembly system and method in an emitted energy system for photolithography |
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US09/055,035 Continuation US6180952B1 (en) | 1998-04-03 | 1998-04-03 | Holder assembly system and method in an emitted energy system for photolithography |
Publications (2)
Publication Number | Publication Date |
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US20010042839A1 true US20010042839A1 (en) | 2001-11-22 |
US6353232B2 US6353232B2 (en) | 2002-03-05 |
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US09/055,035 Expired - Fee Related US6180952B1 (en) | 1998-04-03 | 1998-04-03 | Holder assembly system and method in an emitted energy system for photolithography |
US09/772,447 Expired - Fee Related US6353232B2 (en) | 1998-04-03 | 2001-01-29 | Holder assembly system and method in an emitted energy system for photolithography |
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US09/055,035 Expired - Fee Related US6180952B1 (en) | 1998-04-03 | 1998-04-03 | Holder assembly system and method in an emitted energy system for photolithography |
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US6180952B1 (en) | 2001-01-30 |
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