US20010038558A1 - String programmable nonvolatile memory with NOR architecture - Google Patents
String programmable nonvolatile memory with NOR architecture Download PDFInfo
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- US20010038558A1 US20010038558A1 US09/817,363 US81736301A US2001038558A1 US 20010038558 A1 US20010038558 A1 US 20010038558A1 US 81736301 A US81736301 A US 81736301A US 2001038558 A1 US2001038558 A1 US 2001038558A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
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- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
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Definitions
- the string programming signal SP is brought to the non-active value (associated with the high logic value) to force the string enable signals YML 0 , . . . , YML 7 to the high logic value (FIG. 4). All the string selectors 29 are thus closed, and the column decoder 6 operates in a traditional way.
- the first level decoder 15 sets one of the first level signals YN 0 , . . . , YN 15 at the high logic level, and all the other first level signals YN 0 , . . . , YN 15 at the low logic level (FIG. 3).
- the local decoder 26 is connected to the address bus 20 , so as to receive the second level address bits ADD 2 -ADD 0 , and has eight outputs, each connected to a respective selection branch 56 and supplying a respective local addressing signal S 0 , . . . , S 7 .
Abstract
Description
- The present invention refers to a string programmable nonvolatile memory with NOR architecture.
- As known, many of the characteristics of a nonvolatile memory, such as reading and programming speeds, are determined by the architecture of the memory, as well as by the employed manufacturing process.
- At present, extensively used nonvolatile memories have a so-called NAND and NOR architectures.
- In NAND memories, groups of memory cells, arranged in series and belonging to distinct memory words, are connected to respective bit lines so as to form strings of cells. One memory word is formed by a plurality of adjacent cells connected to different bit lines, while a word string is formed by a plurality of cell strings. In particular, a word string comprises a number of memory words equal to the number of cells contained in a cell string.
- NAND memories are advantageous mainly because they have a low bulk and allow the so-called string programming. In fact, all the cells in a cell string can be programmed by biasing the gate terminal of each cell at a programming gate voltage, and the relevant bit line at a programming drain voltage. In this way, by the Fowler-Nordheim effect, controlled charges reach a floating gate region of each selected cell. Consequently, in a single programming step, byte strings (normally 8 or 16 bytes at a time) may be written. Programming of a NAND memory is therefore very fast.
- On the other hand, NAND memories have very long access times and consequently they do not meet the requisites of reading speed currently demanded in most applications. In addition, the manufacture of NAND memories is complex and costly.
- In NOR memories, instead, the memory cells belonging to a same column are connected in parallel between a same bit line and ground. In addition, the memory cells belonging to a same memory word have their gate terminals connected together via word lines and can be selected simultaneously for reading or for programming. Row and column decoder circuits allow a memory word to be addressed by selecting a word line and a plurality of bit lines.
- As compared to NAND memories, NOR memories have the advantage of having very short access times (thus they are faster during reading), moreover, they can be manufactured using a simpler and less costly fabrication process. However, NOR memories are disadvantageous in that allow only one memory word to be programmed at a time. Thus, it is not possible to perform string programming, and it is necessary to repeat the programming step entirely for each word to be stored in memory. Consequently, NOR memories are slow during programming and are not suited for use in fields in which fast acquisition of a high amount of data is required (as in the case, for instance, of digital photocameras).
- According to the present invention, a string programmable memory with NOR architecture is provided.
- A memory having a NOR architecture has a memory array including a plurality of memory cells arranged in rows and columns in NOR configuration, the memory cells arranged on a same row being connected to one of a plurality of word lines; and the memory cells arranged on a same column being connected to one of a plurality of bit lines, and a column decoder.
- The column decoder comprises a plurality of selection stages, each of which is connected to respective bit lines and receives first bit line addressing signals. The selection stages comprise word programming selectors controlled by the first bit line addressing signals and supplying a programming voltage to only one of the bit lines of each selection stage. Each selection stage moreover comprises a string programming selection circuit controlled by second bit line addressing signals, thereby simultaneously supplying the programming voltage to a plurality of the bit lines of each selection stage.
- The string programming selection circuit comprises a plurality of bit registers that are loaded, during successive clock cycles, with a plurality of data bits, which are then written, simultaneously, to a plurality of bit lines as previously described. Inasmuch as the loading time of a bit register is significantly faster than the programming time of a memory cell, the time saved by programming a string of words simultaneously far exceeds the time spent loading the registers in preparation for the string programming cycle.
- For a better understanding of the invention, some embodiments thereof are now described, simply to provide non-limiting examples, with reference to the attached drawings, wherein:
- FIG. 1 shows a NOR memory of known type;
- FIG. 2 illustrates a simplified block diagram of a column decoder belonging to the memory of FIG. 1, implementing a first embodiment of the present invention;
- FIG. 3 illustrates a simplified circuit diagram of a block of the column decoder of FIG. 2;
- FIG. 4 shows a circuit diagram of a part of the block of FIG. 3 in greater detail;
- FIG. 5 illustrates a simplified block diagram of a column decoder belonging to the memory of FIG. 1, implementing a second embodiment of the present invention;
- FIG. 6 illustrates a simplified circuit diagram of a block of the column decoder of FIG. 5;
- FIGS. 7 and 8 illustrate circuit diagrams of parts of the block of FIG. 6; and
- FIG. 9 shows patterns of signals for the column decoder circuit of FIG. 5.
- FIG. 1 illustrates a two level nonvolatile memory having NOR architecture, in particular with 128 columns per bit. The
memory 1 comprises amemory array 2, formed by a plurality ofmemory cells 3 arranged in rows and columns, arow decoder 5, of known type, and acolumn decoder 6 having a structure described in detail with reference to the following figures. The gate terminals of thememory cells 3 belonging to a same row are connected together viaword lines 9 connected to therow decoder 5. In addition, thememory cells 3 belonging to a same column have their drain terminals connected each to arespective bit line 11. - With reference to FIG. 2, the
column decoder 6 comprises a firstlevel decoder stage 15, a secondlevel decoder stage 16, and a plurality ofbit selection stages 17. In particular, thebit selection stages 17 are equal in number to the bits forming a memory word (normally eight or sixteen). The example discussed below has an eight word memory configuration. - The first
level decoder stage 15 has inputs connected to anaddress bus 20 supplying a group of four first level address bits ADD6, ADD3 and an output connected to afirst level bus 22 and supplying sixteen first level signals YN0, . . . , YN15, each having a high logic value and a low logic value. - The second
level decoder stage 16 has inputs connected to theaddress bus 20 supplying a group of three second level address bits ADD2-ADD0 and outputs connected to asecond level bus 23 and supplying eight second level signals YM0 . . . , YM7, defining first bit line addressing signals. - Each of the
bit selection stages 17 has a group of first level inputs, connected to thefirst level bus 22, and a group of second level inputs, connected to thesecond level bus 23. Thebit selection stages 17 are also directly connected to theaddress bus 20 supplying second level address bits ADD2-ADD0. Thebit selection stages 17 are connected to the outside of thememory 1, to receive a string-programming signal SP, and to circuits inside the memory (known and not illustrated) supplying initialization pulses IN and synchronization pulses ATD. - In addition, the
bit selection stages 17 are each connected to respective groups ofbit lines 11 of thememory array 2 and to a respectivedata bus line 24. Each group ofbit lines 11 comprises, for example, 128bit lines 11. - FIG. 3 shows a simplified circuit diagram of a
bit selection stage 17, comprising a plurality ofselection branches 25 and alocal decoder 26 defining string decoder means. In particular, theselection branches 25 are equal in number to the second level signals YM0, . . . , YM7 (eight, in the case illustrated). - The
local decoder 26 is connected to theaddress bus 20, so as to receive at the input the second level address bits ADD2-ADD0, and has eight outputs, each of which is connected to arespective selection branch 25 and supplies a local addressing signal S0, . . . , S7 defining a second bit line addressing signal. In addition, the local decoder 26 (not illustrated in detail) comprises a combinatory circuit, obvious for the person skilled in the art, for selectively setting one of the local addressing signals S0, . . . , S7 at the low logic level, according to the second level address bits ADD2-ADD0. - Each of the
selection branches 25 comprises a firstlevel selector stage 27, a second level selector stage 28 (defining word programming selection means), astring selector 29, and a local enable register 30 (together defining string programming selection means). - Each first
level selector stage 27 comprises a plurality of first level selectors 31 (sixteen, in the case illustrated), preferably formed by NMOS transistors having drain terminals connected torespective bit lines 11 and source terminals connected to a respectivefirst connection line 34. In each firstlevel selector stage 27, moreover, eachfirst level selector 31 has its gate terminal connected to arespective line - In each
selection branch 25, thesecond level selector 28 and thestring selector 29, preferably formed by NMOS transistors, are connected in series between therespective selector stage 27 and asecond connection line 35. In addition, eachsecond level selector 28 has itsgate terminal 28 a connected to a respective line of the second level bus 23 (not shown), so as to receive one of the second level signals YM0, . . . , YM7, while eachstring selector 29 has itsgate terminal 29 a connected to an output of a respective local enable register 30 (defining enable means). - The
second connection line 35 is connected to a column amplifier 60 (“sense amplifier”) and to aprogramming voltage source 70 supplying a programming voltage VPD. The output of thecolumn amplifier 60 is connected to adata line 24 j of thedata bus 24. - Each local enable
register 30, described in detail hereinafter, receives the string programming signal SP, the sync pulses ATD and initialization pulses IN, and is connected to a respective output of thelocal decoder circuit 26, so as to receive one of the local addressing signals S0, S7. In addition, all the local enable registers 30 belonging to a samebit selection stage 17 have further respective inputs connected to thedata line 24 j of thedata bus 24. Each of the local enablecircuits 30 supplies on its own output a string enable signal YML0, . . . , YNL7 to control therespective string selector 29 on and off. - With reference to FIG. 4, each local enable
register 30 comprises a NORgate 40, anOR gate 41, and abistable circuit 42 of the set-reset type. - The NOR
gate 40 has a first input connected to thedata line 24 j of thedata bus 24 and a second input connected to a respective output of thelocal decoder circuit 26 supplying one of the local addressing signals S0, . . . , S7, here indicated for reasons of simplicity by Sk. In addition, an output of the NORgate 40 is connected to a set terminal 42 a of thebistable circuit 42 via aswitch 43 which has acontrol terminal 43 a receiving the sync pulses ATD. Conveniently, theswitch 43 comprises aCMOS pass gate 45 having a first and a second control terminals both connected to thecontrol terminal 43 a, the former directly, and the latter via aninverter 46. Consequently, theswitch 43 is normally open and closes only in the presence of a sync pulse ATD. - The
bistable circuit 42 preferably comprises a pair ofinverters 48, arranged back-to-back and connected between respective drain terminals of a first and asecond drive transistors first drive transistor 49 forms the set terminal 42 a, while the gate terminal and the drain terminal of thesecond drive transistor 50 form, respectively, areset terminal 42 b receiving the initialization pulses IN, and anoutput terminal 42 c of thebistable circuit 42. Consequently, theoutput terminal 42 c supplies a selection value (having a high logic value) if a pulse is supplied to the set terminal 42 a, and a deselection value (having a low logic value) if a pulse is supplied to thereset terminal 42 b. - The OR gate has a first input connected to the
output terminal 42 c of thebistable circuit 42, a second input receiving the string programming signal SP, and an output connected to thegate terminal 29 a of therespective string selector 29 and supplying one of the string enable signals YML0, . . . , YML7, here indicated for reasons of convenience by YMLk. - The operation of the
memory 1 is the following. - Before single word programming or string programming, the
memory 1 is erased to bring thememory cells 3 into a non-programmed state, normally associated with the high logic value. A programmed state, instead, is associated to the low logic value. Consequently, after erasing, it is necessary to program only thememory cells 3 in which a low logic value is to be stored. - During single word reading or programming, the string programming signal SP is brought to the non-active value (associated with the high logic value) to force the string enable signals YML0, . . . , YML7 to the high logic value (FIG. 4). All the
string selectors 29 are thus closed, and thecolumn decoder 6 operates in a traditional way. In particular, thefirst level decoder 15 sets one of the first level signals YN0, . . . , YN15 at the high logic level, and all the other first level signals YN0, . . . , YN15 at the low logic level (FIG. 3). In this way, in each firstlevel selector stage 27, only onefirst level selector 31 is closed, and therelevant bit line 11 is connected to itsrespective connection line 34. Likewise, thesecond level decoder 16 sets one of the second level signals YM0, . . . , YM7 at the high logic value so as to cause the relevantsecond level selector 28 to close, while all the other second level signals YM0, . . . , YM7 are kept at the low logic value. Consequently, only onebit line 11 is selected for reading or programming and is connected, via thecolumn amplifier 60, to thedata bus 24 or to theprogramming voltage source 70. - When, instead, string programming is carried out, all the second level signals YM0, . . . , YM7 are brought to the high logic value, so as to close all the
second level selectors 28. The string programming signal SP is brought to the active value (associated with the low logic value) and alternatively allows the selection or the deselection value present on theoutput terminals 42 c of the respectivebistable circuit 42 to be supplied to thegate terminals 29 a of the string selectors 29(FIG. 4). - With reference to FIG. 4, an initialization pulse IN is first supplied to the
reset terminals 42 b of thebistable circuits 42, so as to bring all theoutput terminals 42 c of thebistable circuits 42 and the string enable signals YML0, . . . , YML7 to the deselection value (in practice, all thebistable circuits 42 are brought in a reset state). - Then, in successive clock cycles, a control unit (of known type and not illustrated) supplies the
data bus 24 with words having consecutive column addresses and forming a string to be stored in thememory 1. In the described embodiment, one string is formed by eight words, for example, of sixteen bits each. - The words of the string to be stored are sequentially and temporarily loaded in the local enable registers30 (FIG. 3).
- At each clock cycle, the
local decoder 26 sets in sequence one of the local addressing signals S0, . . . , S7 at the low logic value, while all the other signals are kept at the high logic value. - When the local addressing signal Sk is brought to the high logic value, the low logic value is forced on the output of the NOR
gate 40 and on the set terminal 42 a, regardless of the logic value present on thedata line 24 j of thedata bus 24. Consequently, thebistable circuit 42 does not switch and remains in the state previously set. - When the local addressing signal Sk is set at the low logic value, the output of the NOR
gate 40 supplies a complementary logic value with respect to the logic value present on thedata bus 24. This complementary logic value is transferred to the set terminal 42 a of thebistable circuit 42 upon arrival of a sync pulse ATD, when theswitch 43 is closed. Consequently, if thedata line 24 j of thedata bus 24 supplies the high logic level, the low logic level is supplied to the set terminal 42 a, and thebistable circuit 42 remains in the initial reset state. If, instead, a low logic level is present on thedata line 24 j of thedata bus 24, the high logic level is supplied to the set terminal 42 a, thebistable circuit 42 switches to a set state, and theoutput terminal 42 c is brought to the selection value. - In practice, at the end of loading of the words of the string to be stored, the
bistable circuits 42 associated tomemory cells 3 to be programmed at the low logic value are in the set state, and all the others are in the reset state. - Since, as has been mentioned previously, the string programming signal has the active value (low logic value), the values present on the
output terminals 42 c of thebistable circuits 42 are transferred onto the outputs of the respective ORgates 41. - Consequently, the string enable signals YML0, . . . , YML7 associated with
bistable circuits 42 in the set state are at the high logic value, and theirrespective string selectors 29 are closed. The string enable signals YML0, . . . , YML7 associated withbistable circuits 42 in the reset state are at the low logic value, and theirrespective string selectors 29 are open. - In this way (FIG. 3), only the bit lines11 connected to
memory cells 3 that are to be programmed within the word string to be stored are selected. - The selected
memory cells 3 may be then written and verified as usually, until the desired programming level is reached. - The time for programming a plurality of words forming a string is therefore equal to the time required for programming the
slowest memory cell 3 among the selected ones, and is therefore considerably shorter than in known memories, where the time for programming a plurality of words is proportional to the number of the words. - FIGS.5-8, wherein the parts in common with FIGS. 1-4 are designated by the same reference numbers, illustrate a second embodiment of the present invention, which, in particular, may be used for multilevel nonvolatile memories. For convenience, hereinafter reference will be made to a four-level memory, without thereby limiting thereto.
- FIG. 5 shows a column decoder106 differing from the
column decoder 6 of FIG. 2 in that the bit selection stages 17 are replaced by column selection stages 55. In particular, as for the bit selection stages 17 of FIG. 2, the column selection stages 55 are connected to the first level andsecond level decoders first level decoders 15 through thefirst level bus 22, supplying the first level signals YN0, . . . , YN15, and to thesecond level decoders 16 through thesecond level bus 23, supplying the second level signals YM0, YM7. Eachcolumn selection stage 55 is moreover connected to a plurality of bit lines 11 (for example, 128 lines), to theaddress bus 20, and to a respective pair ofdata lines data bus 24, and receives the string programming signal SP, the sync pulses ATD, and the initialization pulses IN. - With reference to FIG. 6, a
column selection stage 55 comprises a plurality of selection branches 56 (eight, in the case in point) and thelocal decoder 26. - As in FIG. 3, the
local decoder 26 is connected to theaddress bus 20, so as to receive the second level address bits ADD2-ADD0, and has eight outputs, each connected to arespective selection branch 56 and supplying a respective local addressing signal S0, . . . , S7. - Each
selection branch 56 comprises a firstlevel selector stage 27, formed by a plurality offirst level selectors 31, asecond level selector 28, and astring selector 29. Thesource terminals 29 b of thestring selector 29 are connected together and to thedata bus 24, through thecolumn amplifier 60, as well as to theprogramming voltage source 70. In addition, each of theselection branches 56 comprises adata register 61, acomparator 62, and a local enableregister 63, which, all together, define enable means. - The data registers61 are each connected to a respective output of the
local decoder 26, and receive a respective local addressing signal S0, . . . , S7, and to the respective pair ofdata lines data bus 24. In addition, each data register 61 has two outputs connected tofirst inputs 62 a of arespective comparator 62, which has twosecond inputs 62 b connected to thecolumn amplifier 60. Furthermore, each of thecomparators 62 has anoutput 62 c connected to a respective local enableregister 63 and issuing a respective programming interrupt signal PI0, . . . , PI7. Eachcomparator 62 is formed by a combinatory circuit (for example, formed byXOR gates 67 and one ANDgate 68—FIG. 8) thereby allowing eachfirst input 62 a to be compared with a respectivesecond input 62 b of thecomparator 62. When the logic values present on the first andsecond inputs comparator 62 are equal two by two, the respective programming interrupt signal PI0, . . . , PI7 is set at a high logic value; otherwise, it is set at a low logic value. - The local enable registers63 are connected to a respective output of the
local decoder 26, supplying each local enableregister 63 with a local addressing signal S0, . . . , S7, and to the data lines 24 a, 24 a of thedata bus 24. In addition, the local enable registers 63 receive the string programming signal SP, the sync pulses ATD, and the initialization pulses IN, and have outputs connected torespective gate terminals 29 a of thestring selectors 29. - With reference to FIG. 7, a local enable
register 63 comprises the same elements as the local enableregister 30 of FIG. 4. The local enableregister 63 moreover comprises an ANDgate 71 having inputs connected to the pair ofdata lines data bus 24, and an output connected to the first input of the NORgate 40. Furthermore, in the local enableregister 63 thebistable circuit 42 has afirst reset input 42 b and asecond reset input 42 d. In particular, thefirst reset terminal 42 b receives the initialization pulses IN, and thesecond reset terminal 42 d is connected to theoutput 62 c of arespective comparator 62 and receives a respective programming interrupt signal, here indicated PIk. Thesecond reset terminal 42 d is connected to a gate terminal of athird drive transistor 73, of NMOS type, which has grounded source terminal and drain terminal connected to theoutput 42 c of thebistable circuit 42. In practice, the second andthird drive transistors - The operation of the
column selection stage 55 will now be described with reference to FIGS. 6-8. - When string programming is performed, one of the first level signals YN0, . . . , YN15 is set to a high logic level, so as to select, in each first
level selector stage 27, arespective bit line 11. In addition, the second-level signals YM0, . . . , YM7 are set at a high logic value, the string programming signal SP is brought to the active value (high logic value), and an initialization pulse IN is supplied, so as to bring all thebistable circuits 42 in the reset state, as evident from FIG. 7. - Then, in successive clock cycles, words forming a string to be stored are loaded in the data register61. FIG. 9 illustrates the patterns of the signals present on the
data bus 24 and on theaddress bus 20 during loading of an eight-word string. In particular, two bits are loaded in each data register 61 (each memory cell may store four possible programming levels). - At the same time, the
bistable circuits 42 are brought in the set state if connected to amemory cell 3 to be written; otherwise, they are kept in the reset state. In fact, for four-level memory cells the non-programmed state normally corresponds to the value “11” (two bits at the high logic value). Consequently, when thememory cell 3 is to remain in the non-programmed state, both the data lines 24 a, 24 a of thedata bus 24 are at a high logic value. The output of the ANDgate 71 is at a high logic value, and, when the local addressing signal Sk is set at the low logic value and a sync pulse ATD is supplied, the low logic value is supplied to the set terminal 42 a of thebistable circuit 42. Consequently, thebistable circuit 42 is kept in the reset state, and the string enable signal YML0, . . . , YML7 is at the low logic value and determines opening of the respective string selector 29 (FIG. 6). Thecorresponding bit line 11 and thememory cell 3 connected thereto are thus deselected. - The
memory cell 3 must instead be written when the value to be stored is other than “11,” i.e., when at least one of the data lines 24 a, 24 a of thedata bus 24 is at the low logic value. In this case (FIG. 7), a high logic value is transferred to the set terminal 42 a through the ANDgate 71 and the NORgate 40, and thebistable circuit 42 switches to the set state and closes the respective string selector 29 (FIG. 6). - In this way, the
memory cells 3 to be written are selected. - Next, a first writing step, to reach a first programming level of the selected memory cells3 (corresponding to the value “10”), and a verify step, in which the selected
memory cells 3 are read sequentially, are carried out. During verify, thecolumn amplifier 60 supplies, to thesecond inputs 62 b of thecomparators 62, pairs of logic values corresponding to the values stored in thememory cells 3. - The
comparators 62 compare the values stored in the data registers 61 with the values stored in thememory cells 3. These values are equal for thememory cells 3 that have reached the desired programming level. In this case, the corresponding programming interrupt signals PI0, . . . , PI7 are set at the high logic value, so as to bring the respectivebistable circuits 42 into the reset state and cause therespective string selectors 29 to open. Thememory cells 3 that have reached the desired programming level are thus deselected, and the others remain selected. - The process is then repeated until programming of the
memory cells 3 associated with the string to be stored is completed. - The advantages of the present invention emerge clearly from the foregoing description.
- The described
memory 1, in fact, can be string programmed even if it has NOR architecture, and may be programmed considerably faster than known NOR memories. Consequently, thememory 1 has a reduced access time, low manufacture costs, and high programming speed, and can thus be advantageously used in a wide range of applications. - Finally, it is clear that numerous modifications and variations can be made to the described memory, all falling within the scope of the invention, as specified in the attached claims.
- In particular, the number of bit selection stages or column selection stages may be varied so as to obtain words of different length. In addition, the column decoder may comprise a different number of selection branches, so enabling programming of strings of different length.
- In addition, instead of using a
local decoder 26 for eachbit selection stage 17 or for eachcolumn selection stage 55, it is possible to use a single global string decoder arranged like the first and second level decoder stages 15, 16 and connected, via a respective bus, to thebit selection stage 17 or thecolumn selection stage 55, even though this entails a bigger consumption of area of the buses present inside thememory 1.
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US10/742,181 US6954395B2 (en) | 2000-03-21 | 2003-12-19 | String programmable nonvolatile memory with NOR architecture |
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JP2838993B2 (en) | 1995-11-29 | 1998-12-16 | 日本電気株式会社 | Nonvolatile semiconductor memory device |
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-
2000
- 2000-03-21 EP EP00830209A patent/EP1137011B1/en not_active Expired - Lifetime
- 2000-03-21 DE DE60041037T patent/DE60041037D1/en not_active Expired - Lifetime
-
2001
- 2001-03-20 US US09/817,363 patent/US6414875B2/en not_active Expired - Lifetime
-
2002
- 2002-06-24 US US10/179,553 patent/US6683808B2/en not_active Expired - Lifetime
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2003
- 2003-12-19 US US10/742,181 patent/US6954395B2/en not_active Expired - Lifetime
- 2003-12-19 US US10/742,429 patent/US7072212B2/en not_active Expired - Lifetime
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US6683808B2 (en) | 2004-01-27 |
US20040130948A1 (en) | 2004-07-08 |
US7072212B2 (en) | 2006-07-04 |
US20040130949A1 (en) | 2004-07-08 |
EP1137011A1 (en) | 2001-09-26 |
DE60041037D1 (en) | 2009-01-22 |
US6954395B2 (en) | 2005-10-11 |
US6414875B2 (en) | 2002-07-02 |
EP1137011B1 (en) | 2008-12-10 |
US20020163833A1 (en) | 2002-11-07 |
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