US20010038152A1 - Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate - Google Patents

Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate Download PDF

Info

Publication number
US20010038152A1
US20010038152A1 US09/725,431 US72543100A US2001038152A1 US 20010038152 A1 US20010038152 A1 US 20010038152A1 US 72543100 A US72543100 A US 72543100A US 2001038152 A1 US2001038152 A1 US 2001038152A1
Authority
US
United States
Prior art keywords
conductive
pad
chip
mounting
mounting surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/725,431
Other versions
US6400016B2 (en
Inventor
I-Ming Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evergrand Holdings Ltd
Original Assignee
I-Ming Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW089100578A external-priority patent/TW434848B/en
Priority claimed from US09/688,855 external-priority patent/US6420788B1/en
Priority to US09/725,431 priority Critical patent/US6400016B2/en
Application filed by I-Ming Chen filed Critical I-Ming Chen
Priority to US09/765,793 priority patent/US6437448B1/en
Publication of US20010038152A1 publication Critical patent/US20010038152A1/en
Priority to US10/121,782 priority patent/US6602732B2/en
Publication of US6400016B2 publication Critical patent/US6400016B2/en
Application granted granted Critical
Assigned to COMPUTECH INTERNATIONAL VENTURES LIMITED reassignment COMPUTECH INTERNATIONAL VENTURES LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, I-MING
Assigned to EVERGRAND HOLDINGS LIMITED reassignment EVERGRAND HOLDINGS LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: COMPUTECH INTERNATIONAL VENTURES LIMITED
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/5328Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0233Structure of the redistribution layers
    • H01L2224/02333Structure of the redistribution layers being a bump
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13005Structure
    • H01L2224/13008Bump connector integrally formed with a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/1316Iron [Fe] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys

Definitions

  • This invention relates to a method for mounting a semiconductor chip on a substrate and to a semiconductor device that is adapted for mounting on a substrate.
  • the applicant disclosed a method for mounting a semiconductor chip on a substrate to prepare a semiconductor device.
  • the substrate has a chip-mounting region provided with a plurality of solder points.
  • the semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region.
  • the method involves the steps of forming conductive bodies in a conductor-forming mold and transferring the conductive bodies from the mold to the pad-mounting surface of the semiconductor chip via known transfer printing techniques.
  • Each conductive body has an extension portion electrically connected to the respective one of the bonding pads, and a connection portion extending to the location corresponding to that of the respective one of the solder points on the chip-mounting region of the substrate.
  • the applicant disclosed another method for mounting a semiconductor chip on a substrate to prepare a semiconductor device.
  • the substrate has a chip-mounting region provided with a plurality of solder points.
  • the semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region.
  • the method involves the steps of forming a photoresist layer on the pad-mounting surface with a plurality of contact receiving cavities, each of which is registered with and exposes a portion of one of the bonding pads on the pad-mounting surface, and forming a plurality of conductive bodies, each of which is electrically connected to one of the bonding pads, and each of which has an anchor portion filling one of the contact receiving cavities and connected to the respective bonding pad, an extension portion extending from the anchor portion and formed on the surface of the photoresist layer, and a contact portion protruding from one end of the extension portion and formed on the surface of the photoresist layer opposite to the anchor portion.
  • the contact portion is disposed at the position corresponding to a respective one of the solder points on the chip-mounting region of the substrate.
  • the main object of the present invention is to provide a method of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/564,989, for mounting a semiconductor chip on a substrate so as to overcome the aforesaid drawback.
  • Another object of the present invention is to provide a semiconductor device of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/564,989 that is capable of overcoming the aforesaid drawback.
  • Still another object of the present invention is to provide a method of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/688,855 for mounting a semiconductor chip on a substrate so as to overcome the aforesaid drawback.
  • a further object of the present invention is to provide a semiconductor device of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/688,855 that is capable of overcoming the aforesaid drawback.
  • the semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region.
  • the method comprises the steps of: forming a plurality of conductive inner bumps, each of which is electrically connected to and is formed to protrude from a respective one of the bonding pads; forming a photoresist layer on the pad-mounting surface, wherein the inner bumps are embedded in the photoresist layer; forming access holes in the photoresist layer, each of which is registered with and exposes at least a portion of a respective one of the inner bumps; and forming a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion filling a respective one of the access holes and connecting electrically with and encapsulating at least a portion of a respective one of the inner bumps, the contact portion being formed on an upper surface of the photoresist layer opposite to the pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the upper
  • a semiconductor device is adapted for mounting on a substrate having a chip-mounting region provided with a plurality of solder points.
  • the semiconductor device comprises: a semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads which are disposed on the pad-mounting surface at locations that are offset from locations of corresponding ones of the solder points on the chip-mounting region; a plurality of conductive inner bumps electrically and respectively connected to and protruding from the bonding pads; a photoresist layer formed on the pad-mounting surface of the semiconductor chip, the photoresist layer being formed with a plurality of access holes registered with and exposing at least a portion of a respective one of the inner bumps on the bonding pads; and a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion filling a respective one of the access holes and connecting electrically with and encapsulating at
  • the semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region.
  • the method comprises the steps of: forming a plurality of conductive inner bumps, each of which is electrically connected to and is formed to protrude from a respective one of the bonding pads; and forming a plurality of spaced apart conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion connecting electrically with and encapsulating a respective one of the inner bumps, the contact portion being formed on said pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the pad-mounting surface and interconnecting the anchor and contact portions.
  • a semiconductor device is adapted for mounting on a substrate having a chip-mounting region provided with a plurality of solder points.
  • the semiconductor device comprises: a semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads which are disposed on the pad-mounting surface at locations that are offset from locations of corresponding ones of the solder points on the chip-mounting region; a plurality of conductive inner bumps electrically and respectively connected to and protruding from the bonding pads; and a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion connecting electrically with and encapsulating a respective one of the inner bumps, the contact portion being formed on the pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the pad-mounting surface and interconnecting the anchor and contact
  • FIG. 1 is a schematic view to illustrate an inner bump formed on a semiconductor chip, which is to be mounted on a substrate according to a method of this invention
  • FIG. 2 is a schematic view to illustrate a photoresist layer formed on a pad-mounting surface of the semiconductor chip of FIG. 1 according to the method of this invention
  • FIG. 3 is a schematic view to illustrate a mask used in a photolithography process for the photoresist layer of FIG. 2 according to the method of this invention
  • FIG. 4 is a schematic view to illustrate an access hole formed in the photoresist layer of FIG. 3 according to the method of this invention
  • FIG. 5 is a schematic view to illustrate formation of a conductive body in the access hole of FIG. 4 according to the method of this invention
  • FIG. 6 is a schematic view to illustrate formation of another conductive body modified from that of FIG. 5;
  • FIG. 7 is a schematic view to illustrate a modified access hole formed in the photoresist layer of FIG. 3 according to the method of this invention.
  • FIG. 8 is a schematic view to illustrate formation of the conductive body in the modified access hole of FIG. 7;
  • FIG. 9 is a schematic view to illustrate formation of another conductive body modified from that of FIG. 8;
  • FIG. 10 is a schematic view to illustrate formation of the inner bump and the conductive body on the pad-mounting surface of the semiconductor chip according to a modified method of this invention.
  • FIG. 11 is a schematic view to illustrate formation of another conductive body modified from that of FIG. 10.
  • FIG. 1 illustrates a semiconductor chip 1 to be mounted on a substrate 7 according to the method of this invention.
  • the substrate 7 has a chip-mounting region provided with a plurality of solder points 71 (only one solder point 71 is shown).
  • the semiconductor chip 1 has a pad-mounting surface 10 provided with a plurality of bonding pads 11 (only one bonding pad 11 is shown), which are to be connected to corresponding ones of the solder points 71 and which are disposed on the pad-mounting surface 10 at locations that are offset from locations of the corresponding ones of the solder points 71 on the chip-mounting region of the substrate 7 .
  • FIGS. 1 to 5 illustrate consecutive steps of processing the semiconductor chip 1 for forming a semiconductor device that is to be mounted on the substrate 7 according to the method of this invention.
  • a plurality of conductive inner bumps 2 are respectively formed on and protrude from the bonding pads 11 on the pad-mounting surface 10 of the semiconductor chip 1 via known soldering techniques.
  • a light-curable layer such as a photoresist layer 3 , is formed on the pad-mounting surface 10 such that the inner bumps 2 are embedded in the photoresist layer 3 .
  • a mask 4 is superimposed on the phtoresist layer 3 , and the photoresist layer 3 is exposed at positions that are offset from the inner bumps 2 and the bonding pads 11 .
  • the exposed portion of the photoresist layer 3 hardens, and forms an insulative isolating layer that covers the pad-mounting surface 10 .
  • a plurality of access holes 30 are formed in the photoresist layer 3 by removing the unexposed portion of the photoresist layer 3 from the isolating layer via solvent washing. Each of the access holes 30 exposes a portion of a respective one of the inner bumps 2 . Each of the access hole 30 has a depth from an upper surface of the photoresist layer 3 to the pad-mounting surface 10 of the semiconductor chip 1 that is opposite to the upper surface of the photoresist layer 3 .
  • a plurality of conductive bodies 5 are formed respectively in the access holes 30 .
  • Each of the conductive bodies 5 has an extension portion 501 , and an anchor portion 500 and a contact portion 502 on opposite ends of the extension portion 501 .
  • the anchor portion 500 fills a respective one of the access holes 30 , and connects electrically with and encapsulates a respective one of the inner bumps 2 .
  • the contact portion 502 is formed on the upper surface of the photoresist layer 3 , and is disposed at the location corresponding to a respective one of the solder points 71 on the chip-mounting region of the substrate 7 .
  • the extension portion 501 is formed on the upper surface of the photoresist layer 3 , and interconnects the anchor and contact portions 500 , 502 .
  • An outer bump 6 is subsequently formed on and protrudes from the contact portion 502 of each conductive body 5 via known soldering techniques after formation of the conductive bodies 5 , and is registered with the respective one of the solder points 71 on the chip-mounting region of the substrate 7 .
  • the inner and outer bumps 2 are preferably formed from tin solder, and the conductive bodies 5 are formed from conductive paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
  • FIG. 6 illustrates a modified conductive body 5 for each bonding pad 11 .
  • the outer bump 6 is formed integrally with the anchor and extension portions 500 , 501 of the respective conductive body 5 .
  • FIGS. 7 to 9 illustrate a modified access hole 30 formed in the photoresist layer 3 for each conductive body 5 according to the aforesaid method of this invention.
  • Each access hole 30 extends from the upper surface of the photoresist layer 3 to a level that is above the pad-mounting surface 10 and that is below a top portion of the respective inner bump 2 .
  • the conductive bodies 5 shown in FIGS. 8 and 9 correspond to those shown in FIGS. 5 and 6, but with the anchor portions of the same encapsulating only portions of the inner bumps 2 .
  • the remaining portions of the inner bumps 2 are embedded in the photoresist layer 3 .
  • FIGS. 10 and 11 illustrate a modified method of this invention based on the previous embodiment.
  • the conductive bodies 5 shown in FIGS. 10 and 11 correspond to those shown in FIGS. 5 and 6, except that no photoresist layer 3 is formed on the pad-mounting surface 10 .
  • Formation of the conductive bodies 5 on the pad-mounting surface 10 in the method of FIGS. 10 and 11 can be carried out by known printing techniques as disclosed in the aforesaid co-pending applications.
  • the difficulty encountered in the prior art can be abated, and the production yield can be significantly increased.
  • the anchor portions 500 of the conductive bodies 5 anchoring at the inner bumps 2 the former can be held firmly in contact with the bonding pads 11 without peeling off during the subsequent processing steps, such as thermal test.

Abstract

A method for manufacturing a semiconductor device includes the steps of providing a semiconductor chip having a pad-mounting surface with a bonding pad, forming an inner bump on the bonding pad, and forming a conductive body on the pad-mounting surface. The conductive body has an anchor portion connecting electrically with and encapsulating the inner bump, and a contact portion offset from the anchor portion and adapted to be connected to a substrate.

Description

  • This application is a continuation-in-part (CIP) of a co-pending U.S. patent application Ser. No. 09/564,989, filed by the applicant on May 5, 2000, and a co-pending U.S. patent application Ser. No. 09/688,855 filed by the applicant on Oct. 16, 2000, the entire disclosures of which are incorporated herein by reference.[0001]
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • This invention relates to a method for mounting a semiconductor chip on a substrate and to a semiconductor device that is adapted for mounting on a substrate. [0003]
  • 2. Description of the Related Art [0004]
  • With the rapid advancement in semiconductor fabrication technology, the bonding pads on the surface of a semiconductor chip are getting smaller in size, and the distance between adjacent bonding pads are getting shorter. These can create difficulty when connecting the semiconductor chip to an external circuit, and can affect adversely the production yield. [0005]
  • In the co-pending U.S. patent application Ser. No. 09/564,989, the applicant disclosed a method for mounting a semiconductor chip on a substrate to prepare a semiconductor device. The substrate has a chip-mounting region provided with a plurality of solder points. The semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region. The method involves the steps of forming conductive bodies in a conductor-forming mold and transferring the conductive bodies from the mold to the pad-mounting surface of the semiconductor chip via known transfer printing techniques. Each conductive body has an extension portion electrically connected to the respective one of the bonding pads, and a connection portion extending to the location corresponding to that of the respective one of the solder points on the chip-mounting region of the substrate. [0006]
  • In the co-pending U.S. patent application Ser. No. 09/688,855, the applicant disclosed another method for mounting a semiconductor chip on a substrate to prepare a semiconductor device. Similar to the co-pending U.S. patent application Ser. No. 09/564,989, the substrate has a chip-mounting region provided with a plurality of solder points. The semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region. The method involves the steps of forming a photoresist layer on the pad-mounting surface with a plurality of contact receiving cavities, each of which is registered with and exposes a portion of one of the bonding pads on the pad-mounting surface, and forming a plurality of conductive bodies, each of which is electrically connected to one of the bonding pads, and each of which has an anchor portion filling one of the contact receiving cavities and connected to the respective bonding pad, an extension portion extending from the anchor portion and formed on the surface of the photoresist layer, and a contact portion protruding from one end of the extension portion and formed on the surface of the photoresist layer opposite to the anchor portion. The contact portion is disposed at the position corresponding to a respective one of the solder points on the chip-mounting region of the substrate. [0007]
  • SUMMARY OF THE INVENTION
  • The main object of the present invention is to provide a method of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/564,989, for mounting a semiconductor chip on a substrate so as to overcome the aforesaid drawback. [0008]
  • Another object of the present invention is to provide a semiconductor device of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/564,989 that is capable of overcoming the aforesaid drawback. [0009]
  • Still another object of the present invention is to provide a method of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/688,855 for mounting a semiconductor chip on a substrate so as to overcome the aforesaid drawback. [0010]
  • A further object of the present invention is to provide a semiconductor device of the type disclosed in the aforesaid co-pending U.S. patent application Ser. No. 09/688,855 that is capable of overcoming the aforesaid drawback. [0011]
  • According to one aspect of the present invention, there is provided a method for mounting a semiconductor chip on a substrate having a chip-mounting region provided with a plurality of solder points. The semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region. The method comprises the steps of: forming a plurality of conductive inner bumps, each of which is electrically connected to and is formed to protrude from a respective one of the bonding pads; forming a photoresist layer on the pad-mounting surface, wherein the inner bumps are embedded in the photoresist layer; forming access holes in the photoresist layer, each of which is registered with and exposes at least a portion of a respective one of the inner bumps; and forming a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion filling a respective one of the access holes and connecting electrically with and encapsulating at least a portion of a respective one of the inner bumps, the contact portion being formed on an upper surface of the photoresist layer opposite to the pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the upper surface of the photoresist layer and interconnecting the anchor and contact portions. [0012]
  • According to another aspect of the present invention, a semiconductor device is adapted for mounting on a substrate having a chip-mounting region provided with a plurality of solder points. The semiconductor device comprises: a semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads which are disposed on the pad-mounting surface at locations that are offset from locations of corresponding ones of the solder points on the chip-mounting region; a plurality of conductive inner bumps electrically and respectively connected to and protruding from the bonding pads; a photoresist layer formed on the pad-mounting surface of the semiconductor chip, the photoresist layer being formed with a plurality of access holes registered with and exposing at least a portion of a respective one of the inner bumps on the bonding pads; and a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion filling a respective one of the access holes and connecting electrically with and encapsulating at least a portion of a respective one of the inner bumps, the contact portion being formed on an upper surface of the photoresist layer opposite to the pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the upper surface of the photoresist layer and interconnecting the anchor and contact portions. [0013]
  • According to still another aspect of the present invention, there is provided a method for mounting a semiconductor chip on a substrate having a chip-mounting region provided with a plurality of solder points. The semiconductor chip has a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region. The method comprises the steps of: forming a plurality of conductive inner bumps, each of which is electrically connected to and is formed to protrude from a respective one of the bonding pads; and forming a plurality of spaced apart conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion connecting electrically with and encapsulating a respective one of the inner bumps, the contact portion being formed on said pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the pad-mounting surface and interconnecting the anchor and contact portions. [0014]
  • According to a further aspect of the present invention, a semiconductor device is adapted for mounting on a substrate having a chip-mounting region provided with a plurality of solder points. The semiconductor device comprises: a semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads which are disposed on the pad-mounting surface at locations that are offset from locations of corresponding ones of the solder points on the chip-mounting region; a plurality of conductive inner bumps electrically and respectively connected to and protruding from the bonding pads; and a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion connecting electrically with and encapsulating a respective one of the inner bumps, the contact portion being formed on the pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the pad-mounting surface and interconnecting the anchor and contact portions.[0015]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • In drawings which illustrate embodiments of the invention, [0016]
  • FIG. 1 is a schematic view to illustrate an inner bump formed on a semiconductor chip, which is to be mounted on a substrate according to a method of this invention; [0017]
  • FIG. 2 is a schematic view to illustrate a photoresist layer formed on a pad-mounting surface of the semiconductor chip of FIG. 1 according to the method of this invention; [0018]
  • FIG. 3 is a schematic view to illustrate a mask used in a photolithography process for the photoresist layer of FIG. 2 according to the method of this invention, [0019]
  • FIG. 4 is a schematic view to illustrate an access hole formed in the photoresist layer of FIG. 3 according to the method of this invention; [0020]
  • FIG. 5 is a schematic view to illustrate formation of a conductive body in the access hole of FIG. 4 according to the method of this invention; [0021]
  • FIG. 6 is a schematic view to illustrate formation of another conductive body modified from that of FIG. 5; [0022]
  • FIG. 7 is a schematic view to illustrate a modified access hole formed in the photoresist layer of FIG. 3 according to the method of this invention; [0023]
  • FIG. 8 is a schematic view to illustrate formation of the conductive body in the modified access hole of FIG. 7; [0024]
  • FIG. 9 is a schematic view to illustrate formation of another conductive body modified from that of FIG. 8; [0025]
  • FIG. 10 is a schematic view to illustrate formation of the inner bump and the conductive body on the pad-mounting surface of the semiconductor chip according to a modified method of this invention; and [0026]
  • FIG. 11 is a schematic view to illustrate formation of another conductive body modified from that of FIG. 10.[0027]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • FIG. 1 illustrates a [0028] semiconductor chip 1 to be mounted on a substrate 7 according to the method of this invention. The substrate 7 has a chip-mounting region provided with a plurality of solder points 71 (only one solder point 71 is shown). The semiconductor chip 1 has a pad-mounting surface 10 provided with a plurality of bonding pads 11 (only one bonding pad 11 is shown), which are to be connected to corresponding ones of the solder points 71 and which are disposed on the pad-mounting surface 10 at locations that are offset from locations of the corresponding ones of the solder points 71 on the chip-mounting region of the substrate 7.
  • FIGS. [0029] 1 to 5 illustrate consecutive steps of processing the semiconductor chip 1 for forming a semiconductor device that is to be mounted on the substrate 7 according to the method of this invention.
  • In FIG. 1, a plurality of conductive inner bumps [0030] 2 (only one inner bump is shown) are respectively formed on and protrude from the bonding pads 11 on the pad-mounting surface 10 of the semiconductor chip 1 via known soldering techniques.
  • In FIG. 2, a light-curable layer, such as a [0031] photoresist layer 3, is formed on the pad-mounting surface 10 such that the inner bumps 2 are embedded in the photoresist layer 3.
  • In FIG. 3, a [0032] mask 4 is superimposed on the phtoresist layer 3, and the photoresist layer 3 is exposed at positions that are offset from the inner bumps 2 and the bonding pads 11. The exposed portion of the photoresist layer 3 hardens, and forms an insulative isolating layer that covers the pad-mounting surface 10.
  • In FIG. 4, a plurality of access holes [0033] 30 (only one is shown) are formed in the photoresist layer 3 by removing the unexposed portion of the photoresist layer 3 from the isolating layer via solvent washing. Each of the access holes 30 exposes a portion of a respective one of the inner bumps 2. Each of the access hole 30 has a depth from an upper surface of the photoresist layer 3 to the pad-mounting surface 10 of the semiconductor chip 1 that is opposite to the upper surface of the photoresist layer 3.
  • In FIG. 5, a plurality of conductive bodies [0034] 5 (only one is shown) are formed respectively in the access holes 30. Each of the conductive bodies 5 has an extension portion 501, and an anchor portion 500 and a contact portion 502 on opposite ends of the extension portion 501. The anchor portion 500 fills a respective one of the access holes 30, and connects electrically with and encapsulates a respective one of the inner bumps 2. The contact portion 502 is formed on the upper surface of the photoresist layer 3, and is disposed at the location corresponding to a respective one of the solder points 71 on the chip-mounting region of the substrate 7. The extension portion 501 is formed on the upper surface of the photoresist layer 3, and interconnects the anchor and contact portions 500, 502. An outer bump 6 is subsequently formed on and protrudes from the contact portion 502 of each conductive body 5 via known soldering techniques after formation of the conductive bodies 5, and is registered with the respective one of the solder points 71 on the chip-mounting region of the substrate 7.
  • The inner and [0035] outer bumps 2 are preferably formed from tin solder, and the conductive bodies 5 are formed from conductive paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
  • FIG. 6 illustrates a modified [0036] conductive body 5 for each bonding pad 11. Instead of forming the outer bump 6 on the contact portion 502 of each conductive body 5 by soldering techniques, the outer bump 6 is formed integrally with the anchor and extension portions 500, 501 of the respective conductive body 5.
  • FIGS. [0037] 7 to 9 illustrate a modified access hole 30 formed in the photoresist layer 3 for each conductive body 5 according to the aforesaid method of this invention. Each access hole 30 extends from the upper surface of the photoresist layer 3 to a level that is above the pad-mounting surface 10 and that is below a top portion of the respective inner bump 2. The conductive bodies 5 shown in FIGS. 8 and 9 correspond to those shown in FIGS. 5 and 6, but with the anchor portions of the same encapsulating only portions of the inner bumps 2. The remaining portions of the inner bumps 2 are embedded in the photoresist layer 3.
  • FIGS. 10 and 11 illustrate a modified method of this invention based on the previous embodiment. The [0038] conductive bodies 5 shown in FIGS. 10 and 11 correspond to those shown in FIGS. 5 and 6, except that no photoresist layer 3 is formed on the pad-mounting surface 10. Formation of the conductive bodies 5 on the pad-mounting surface 10 in the method of FIGS. 10 and 11 can be carried out by known printing techniques as disclosed in the aforesaid co-pending applications.
  • With the design of the [0039] conductive bodies 5 according to the method of this invention, the difficulty encountered in the prior art can be abated, and the production yield can be significantly increased. Moreover, with the anchor portions 500 of the conductive bodies 5 anchoring at the inner bumps 2, the former can be held firmly in contact with the bonding pads 11 without peeling off during the subsequent processing steps, such as thermal test.
  • With the invention thus explained, it is apparent that various modifications and variations can be made without departing from the spirit of the present invention. It is therefore intended that the invention be limited only as recited in the appended claims. [0040]

Claims (22)

I claim:
1. A method for mounting a semiconductor chip on a substrate, the substrate having a chip-mounting region provided with a plurality of solder points, the semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region, said method comprising the steps of:
forming a plurality of conductive inner bumps, each of which is electrically connected to and is formed so as to protrude from a respective one of the bonding pads;
forming a photoresist layer on the pad-mounting surface, wherein the inner bumps are embedded in the photoresist layer;
forming access holes in the photoresist layer, each of which is registered with and exposes at least a portion of a respective one of the inner bumps; and
forming a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion filling a respective one of the access holes and connecting electrically with and encapsulating at least a portion of a respective one of the inner bumps, the contact portion being formed on an upper surface of the photoresist layer opposite to the pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on the upper surface of the photoresist layer and interconnecting the anchor and contact portions.
2. The method of
claim 1
, wherein each of the access holes has a depth from the upper surface of the photoresist layer to the pad-mounting surface of the semiconductor chip.
3. The method of
claim 1
, wherein each of the access holes has a depth from the upper surface of the photoresist layer to a level above the respective one of the bonding pads and below a top portion of the respective one of the inner bumps.
4. The method of
claim 1
, wherein the contact portion of each of the conductive bodies is formed with a conductive outer bump that protrudes therefrom in a transverse direction relative to the extension portion, and is integrally formed with the anchor and extension portions.
5. The method of
claim 1
, further comprising the step of forming a conductive outer bump on the contact portion of each of the conductive bodies after formation of the conductive bodies such that the outer bump protrudes from the contact portion in a transverse direction relative to the extension portion.
6. The method of
claim 1
, wherein the inner bumps are made of tin solder, and the conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
7. The method of
claim 5
, wherein the inner and outer bumps are made of tin solder, and the conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
8. A semiconductor device adapted for mounting on a substrate, the substrate having a chip-mounting region provided with a plurality of solder points, said semiconductor device comprising:
a semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads which are disposed on said pad-mounting surface at locations that are offset from locations of corresponding ones of the solder points on the chip-mounting region;
a plurality of conductive inner bumps electrically and respectively connected to and protruding from said bonding pads;
a photoresist layer formed on said pad-mounting surface of said semiconductor chip, said photoresist layer being formed with a plurality of access holes registered with and exposing at least a portion of a respective one of said inner bumps on said bonding pads; and
a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of said extension portion, said anchor portion filling a respective one of said access holes and connecting electrically with and encapsulating at least a portion of a respective one of said inner bumps, said contact portion being formed on an upper surface of said photoresist layer opposite to said pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, said extension portion being formed on said upper surface of said photoresist layer and interconnecting said anchor and contact portions.
9. The semiconductor device of
claim 8
, wherein each of said access holes has a depth from said upper surface of said photoresist layer to said pad-mounting surface of said semiconductor chip.
10. The semiconductor device of
claim 8
, wherein each of said access holes has a depth from said upper surface of said photoresist layer to a level above the respective one of said bonding pads and below a top portion of the respective one of said inner bumps.
11. The semiconductor device of
claim 8
, wherein said contact portion of each of said conductive bodies is formed with a conductive outer bump that protrudes therefrom in a transverse direction relative to said extension portion, and is integrally formed with said anchor and extension portions.
12. The semiconductor device of
claim 8
, further comprising a conductive outer bump formed on said contact portion of each of the conductive bodies such that said outer bump protrudes from said contact portion in a transverse direction relative to said extension portion.
13. The semiconductor device of
claim 8
, wherein said inner bumps are made of tin solder, and said conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
14. The semiconductor device of
claim 12
, wherein said inner and outer bumps are made of tin solder, and said conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
15. A method for mounting a semiconductor chip on a substrate, the substrate having a chip-mounting region provided with a plurality of solder points, the semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads, which are to be connected to corresponding ones of the solder points and which are disposed on the pad-mounting surface at locations that are offset from locations of the corresponding ones of the solder points on the chip-mounting region, said method comprising the steps of:
forming a plurality of conductive inner bumps, each of which is electrically connected to and is formed so as to protrude from a respective one of the bonding pads; and
forming a plurality of spaced apart conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of the extension portion, the anchor portion connecting electrically with and encapsulating a respective one of the inner bumps, the contact portion being formed on said pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, the extension portion being formed on said pad-mounting surface and interconnecting the anchor and contact portions.
16. The method of
claim 15
, further comprising the step of forming a conductive outer bump on the contact portion of each of the conductive bodies after formation of the conductive bodies such that the outer bump protrudes from the contact portion in a transverse direction relative to the extension portion.
17. The method of
claim 15
, wherein the inner bumps are made of tin solder, and the conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
18. The method of
claim 16
, wherein the inner and outer bumps are made of tin solder, the conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
19. A semiconductor device adapted for mounting on a substrate, the substrate having a chip-mounting region provided with a plurality of solder points, said semiconductor device comprising:
a semiconductor chip having a pad-mounting surface provided with a plurality of bonding pads which are disposed on said pad-mounting surface at locations that are offset from locations of corresponding ones of the solder points on the chip-mounting region;
a plurality of conductive inner bumps electrically and respectively connected to and protruding from said bonding pads; and
a plurality of conductive bodies, each of which has an extension portion, and an anchor portion and a contact portion on opposite ends of said extension portion, said anchor portion connecting electrically with and encapsulating a respective one of said inner bumps, said contact portion being formed on said pad-mounting surface and being disposed at the location corresponding to a respective one of the solder points on the chip-mounting region of the substrate, said extension portion being formed on said pad-mounting surface and interconnecting said anchor and contact portions.
20. The semiconductor device of
claim 19
, further comprising a conductive outer bump formed on said contact portion of each of said conductive bodies such that said outer bump protrudes from said contact portion in a transverse direction relative to said extension portion.
21. The semiconductor device of
claim 19
, wherein said inner bumps are made of tin solder, and said conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin, and aluminum.
22. The semiconductor device of
claim 20
, wherein said inner and outer bumps are made of tin solder, and said conductive bodies are made of a conductive metal paste that contains a metal selected from a group consisting of gold, silver, copper, iron, tin.
US09/725,431 2000-01-14 2000-11-29 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate Expired - Fee Related US6400016B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US09/725,431 US6400016B2 (en) 2000-01-14 2000-11-29 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
US09/765,793 US6437448B1 (en) 2000-01-14 2001-01-18 Semiconductor device adapted for mounting on a substrate
US10/121,782 US6602732B2 (en) 2000-01-14 2002-04-11 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
TW089100578A TW434848B (en) 2000-01-14 2000-01-14 Semiconductor chip device and the packaging method
US09/564,989 US6333561B1 (en) 2000-01-14 2000-05-05 Method for mounting a semiconductor chip on a substrate, and semiconductor device adapted for mounting on a substrate
TW089100578A02 2000-09-29
US09/688,855 US6420788B1 (en) 2000-08-25 2000-10-16 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
US09/725,431 US6400016B2 (en) 2000-01-14 2000-11-29 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US09/564,989 Continuation-In-Part US6333561B1 (en) 2000-01-14 2000-05-05 Method for mounting a semiconductor chip on a substrate, and semiconductor device adapted for mounting on a substrate
US09/688,855 Continuation-In-Part US6420788B1 (en) 2000-01-14 2000-10-16 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US09/765,793 Continuation-In-Part US6437448B1 (en) 2000-01-14 2001-01-18 Semiconductor device adapted for mounting on a substrate
US10/121,782 Division US6602732B2 (en) 2000-01-14 2002-04-11 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Publications (2)

Publication Number Publication Date
US20010038152A1 true US20010038152A1 (en) 2001-11-08
US6400016B2 US6400016B2 (en) 2002-06-04

Family

ID=26666824

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/725,431 Expired - Fee Related US6400016B2 (en) 2000-01-14 2000-11-29 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
US10/121,782 Expired - Fee Related US6602732B2 (en) 2000-01-14 2002-04-11 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/121,782 Expired - Fee Related US6602732B2 (en) 2000-01-14 2002-04-11 Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate

Country Status (1)

Country Link
US (2) US6400016B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120153475A1 (en) * 2010-12-16 2012-06-21 Stmicroelectronics (Crolles 2) Sas Method of assembling two integrated circuits and corresponding structure

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7247932B1 (en) * 2000-05-19 2007-07-24 Megica Corporation Chip package with capacitor
EP1346411A2 (en) * 2000-12-01 2003-09-24 Broadcom Corporation Thermally and electrically enhanced ball grid array packaging
US20020079572A1 (en) * 2000-12-22 2002-06-27 Khan Reza-Ur Rahman Enhanced die-up ball grid array and method for making the same
US7161239B2 (en) 2000-12-22 2007-01-09 Broadcom Corporation Ball grid array package enhanced with a thermal and electrical connector
US6906414B2 (en) * 2000-12-22 2005-06-14 Broadcom Corporation Ball grid array package with patterned stiffener layer
US7259448B2 (en) * 2001-05-07 2007-08-21 Broadcom Corporation Die-up ball grid array package with a heat spreader and method for making the same
FR2830636A1 (en) * 2001-10-05 2003-04-11 St Microelectronics Sa HIGH EFFICIENCY ERROR DETECTION AND / OR CORRECTION CODE
US7550845B2 (en) * 2002-02-01 2009-06-23 Broadcom Corporation Ball grid array package with separated stiffener layer
US6825108B2 (en) * 2002-02-01 2004-11-30 Broadcom Corporation Ball grid array package fabrication with IC die support structures
US6861750B2 (en) * 2002-02-01 2005-03-01 Broadcom Corporation Ball grid array package with multiple interposers
ATE541312T1 (en) * 2004-05-28 2012-01-15 Nxp Bv CHIP WITH TWO GROUPS OF CHIP CONTACTS
US7482686B2 (en) 2004-06-21 2009-01-27 Braodcom Corporation Multipiece apparatus for thermal and electromagnetic interference (EMI) shielding enhancement in die-up array packages and method of making the same
US7432586B2 (en) * 2004-06-21 2008-10-07 Broadcom Corporation Apparatus and method for thermal and electromagnetic interference (EMI) shielding enhancement in die-up array packages
US7411281B2 (en) * 2004-06-21 2008-08-12 Broadcom Corporation Integrated circuit device package having both wire bond and flip-chip interconnections and method of making the same
US7786591B2 (en) 2004-09-29 2010-08-31 Broadcom Corporation Die down ball grid array package
EP1900025B1 (en) * 2005-06-09 2010-02-10 Lester E. Burgess Hybrid conductive coating method for electrical bridging connection of RFID die chip to composite antenna
US8183680B2 (en) 2006-05-16 2012-05-22 Broadcom Corporation No-lead IC packages having integrated heat spreader for electromagnetic interference (EMI) shielding and thermal enhancement
US20080169555A1 (en) * 2007-01-16 2008-07-17 Ati Technologies Ulc Anchor structure for an integrated circuit
KR101022912B1 (en) * 2008-11-28 2011-03-17 삼성전기주식회사 A printed circuit board comprising a metal bump and a method of manufacturing the same
US8508054B2 (en) * 2011-06-16 2013-08-13 Broadcom Corporation Enhanced bump pitch scaling

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5632631A (en) * 1994-06-07 1997-05-27 Tessera, Inc. Microelectronic contacts with asperities and methods of making same
JPH08236586A (en) * 1994-12-29 1996-09-13 Nitto Denko Corp Semiconductor device and manufacturing method thereof
JP3060896B2 (en) * 1995-05-26 2000-07-10 日本電気株式会社 Structure of bump electrode
US6200143B1 (en) * 1998-01-09 2001-03-13 Tessera, Inc. Low insertion force connector for microelectronic elements
TW434848B (en) * 2000-01-14 2001-05-16 Chen I Ming Semiconductor chip device and the packaging method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120153475A1 (en) * 2010-12-16 2012-06-21 Stmicroelectronics (Crolles 2) Sas Method of assembling two integrated circuits and corresponding structure
US8674517B2 (en) * 2010-12-16 2014-03-18 Stmicroelectronics (Crolles 2) Sas Method of assembling two integrated circuits and corresponding structure

Also Published As

Publication number Publication date
US6602732B2 (en) 2003-08-05
US6400016B2 (en) 2002-06-04
US20020109225A1 (en) 2002-08-15

Similar Documents

Publication Publication Date Title
US6602732B2 (en) Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
JP3443567B2 (en) Method of mounting semiconductor chip on substrate and semiconductor device suitable for mounting on substrate
US7109065B2 (en) Bumped chip carrier package using lead frame and method for manufacturing the same
US7247526B1 (en) Process for fabricating an integrated circuit package
US6670219B2 (en) Method of fabricating a CDBGA package
KR100671921B1 (en) Semiconductor device and manufacturing method thereof
US6611063B1 (en) Resin-encapsulated semiconductor device
US8241967B2 (en) Semiconductor package with a support structure and fabrication method thereof
US6921980B2 (en) Integrated semiconductor circuit including electronic component connected between different component connection portions
US20100233855A1 (en) Method for fabricating chip scale package structure with metal pads exposed from an encapsulant
US6949470B2 (en) Method for manufacturing circuit devices
US6610558B2 (en) Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
US6437448B1 (en) Semiconductor device adapted for mounting on a substrate
KR100422346B1 (en) chip scale package and method of fabricating the same
US20070108609A1 (en) Bumped chip carrier package using lead frame and method for manufacturing the same
US7088004B2 (en) Flip-chip device having conductive connectors
KR100420780B1 (en) Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
US20010012644A1 (en) Method for mounting a semiconductor chip on a substrate, and semiconductor device adapted for mounting on a substrate
KR100415239B1 (en) Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
JP2691891B2 (en) Electrical connection structure between semiconductor chip and printed circuit board and method for connecting the same
KR100800135B1 (en) Method for fabricating chip size package
AU742589B2 (en) Method for mounting a semiconductor chip on a substrate, and semiconductor device adapted for mounting on substrate
EP1162654A1 (en) Method for mounting a semiconductor chip on a substrate, and semiconductor device adapted for mounting on a substrate
KR20000050695A (en) Method for fabricating a semiconductor package

Legal Events

Date Code Title Description
AS Assignment

Owner name: COMPUTECH INTERNATIONAL VENTURES LIMITED, VIRGIN I

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHEN, I-MING;REEL/FRAME:013352/0572

Effective date: 20020801

AS Assignment

Owner name: EVERGRAND HOLDINGS LIMITED, VIRGIN ISLANDS, BRITIS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:COMPUTECH INTERNATIONAL VENTURES LIMITED;REEL/FRAME:015653/0116

Effective date: 20041110

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20140604