US20010028589A1 - Self-refresh controlling apparatus - Google Patents
Self-refresh controlling apparatus Download PDFInfo
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- US20010028589A1 US20010028589A1 US09/745,427 US74542700A US2001028589A1 US 20010028589 A1 US20010028589 A1 US 20010028589A1 US 74542700 A US74542700 A US 74542700A US 2001028589 A1 US2001028589 A1 US 2001028589A1
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- control signal
- internal clock
- clock signal
- self refresh
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- 239000000872 buffer Substances 0.000 claims abstract description 57
- 230000004913 activation Effects 0.000 claims abstract description 35
- 230000003111 delayed effect Effects 0.000 claims abstract description 5
- 230000003139 buffering effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 9
- 230000001360 synchronised effect Effects 0.000 description 6
- 230000001934 delay Effects 0.000 description 5
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
Definitions
- the claimed inventions relate, at least generally, to a self-refresh controlling apparatus. More specifically, some of the claimed inventions feature a self refresh controlling apparatus capable of stabilizing circuit operation.
- self-refresh denotes a refresh operation performed internally with a predetermined period to maintain data stored in a memory cell during a waiting state in a semiconductor memory as a DRAM (Dynamic Random Access Memory).
- DRAM Dynamic Random Access Memory
- a problem occurs due to the difficulty of adjusting the timing between the signal synchronized with the external clock signal and the signal not synchronized with the external clock signal. Furthermore, when a variety of frequencies should be adjusted, proper delays are required and the problem becomes more serious.
- FIG. 1 is a block diagram of a conventional self-refresh controlling apparatus.
- the apparatus includes a clock enable signal buffer 10 for buffering an externally provided clock enable signal cke and generating a self-refresh exit control signal s_ref_exit.
- a self-refresh logic 20 controls activation of a clock buffer enable control signal buf-en by performing the self-refresh operation depending on the state of the self-refresh exit control signal s_ref_exit from the clock enable signal buffer 10 .
- a clock buffer 30 receives the clock buffer enable control signal buf-en for comparing the potential of an external input clock signal ext_clk with a reference to generate an internal clock signal int_clk.
- a command and address latch 40 latches a command and an address buffered with the internal clock signal int_clk in synchronization with the external clock signal ext_clk.
- FIG. 2 is a timing diagram explaining the operation of the self refresh controlling apparatus shown in FIG. 1 (Prior Art).
- the clock buffer enable control signal buf_en generated under control of the clock enable signal cke as shown in (d) is a signal generated that is riot synchronized with the external clock signal ext_clk.
- the self refresh controlling apparatus latches the output signal of a command and address buffer (not shown) in synchronization with the external clock signal ext_clk at the command and address latch 40 by using the internal clock signal int_clk.
- the output signal of the command and address buffer is adjusted so that it is applied from an external source as its set-up time and hold time match.
- the claimed inventions feature, at least in part, a self refresh controlling apparatus capable of stabilizing circuit operation. This stabilization is achieved by preventing failure after self refresh by matching the set-up time and the hold time of the clock buffer output signal by adjusting timing between the signal synchronized with the external clock signal and the signal not synchronized with the external clock signal. Accordingly, the self-refresh controlling apparatus of the present invention is useful for use with any semiconductor memory apparatus performing self-refresh.
- An exemplary embodiment of the claimed inventions provides a self refresh controlling apparatus including a first buffering unit for buffering a clock enable signal received from an external source to generate a self refresh completion control signal.
- a self refresh logic controls activation of a clock buffer enable control signal by performing self refresh operation depending on the state of the self refresh completion control signal from the first buffering unit.
- a second buffering unit receives the clock buffer enable control signal for comparing a potential of an external clock signal with a reference potential to generate an internal clock signal.
- a delay unit delays the clock buffer enable control signal by a predetermined time.
- An internal clock signal activation controlling unit controls activation of the internal clock signal by logically combining the internal clock signal with a control signal generated under control of the delayed clock buffer enable control signal from the delaying unit and the internal clock signal.
- a latching unit latches, in synchronization with the external clock signal, a command and an address buffered by the internal clock signal of which timing is adjusted at the internal clock signal activation controlling unit.
- FIG. 1 (Prior Art) is a block diagram of a conventional self refresh controlling apparatus
- FIG. 2 (Prior Art) is an operational timing diagram of the conventional self refresh controlling apparatus in FIG. 1;
- FIG. 3 is a block diagram of a self refresh controlling apparatus in accordance with the present invention.
- FIG. 4 is an embodiment of a delaying unit and an internal clock signal activation controlling unit (shown as a general block in FIG. 3);
- FIG. 5 is a timing diagram explaining the operation of a self refresh controlling apparatus in accordance with the present invention.
- FIG. 3 is a block diagram of an exemplary embodiment of a self refresh controlling apparatus constructed and arranged in accordance with the principles of the claimed inventions.
- a clock enable signal buffer 10 buffers a clock enable signal cke from an external source and generates a self-refresh exit control signal s_ref_exit.
- Self-refresh logic 20 controls activation of a clock buffer enable control signal buf-en by performing self-refresh operation depending on the state of the self-refresh exit control signal s_ref_exit from the clock enable signal buffer 10 .
- a clock buffer 30 receives the clock buffer enable control signal buf-en for comparing the potential of an external input clock signal ext_clk with a reference potential to generate an internal clock signal int_clk.
- a delaying unit delays the clock buffer enable control signal buf_en by a predetermined time delay Dt.
- An internal clock signal activation controlling unit 60 controls activation of a new internal clock signal new_int_clk by logically combining the internal clock signal int_clk with a control signal ctrl generated under control of the clock enable control signal buf_en_D from the delaying unit 50 and the internal clock signal int_clk.
- a command and address latch 40 latches, in synchronization with the external clock signal ext_clk, a command and an address buffered with the internal clock signal int_clk of which activation timing is adjusted at the internal clock signal activation controlling unit 60 .
- Clock buffer 30 generates the internal clock signal int_clk.
- Delaying unit 50 delays the clock buffer enable controlling signal buf_en from the self refresh logic 20 by the time delay Dt.
- Internal clock signal activation controlling unit 60 provides the control signal for the command and address latch by adjusting the activation timing of the internal clock signal int_clk delay at the delaying unit 50 . The following description focuses on elements 50 and 60 .
- FIG. 4 is a schematic diagram of an embodiment of a delaying unit and an internal clock signal activation controlling unit 60 (shown in FIG. 3).
- the delaying unit 50 can be simply constructed utilizing an inverter chain structure forming minimum delay Dt required to activate the clock buffer enable control signal buf_en later than the internal clock signal int_clk.
- Internal clock signal activation controlling unit 60 includes a first and a second PMOS transistors MP 1 , MP 2 serially coupled between the power voltage input and the control signal ctrl output.
- the gate of transistor MP 2 is coupled to receive int_clk.
- the gate of transistor MP 1 is coupled to receive the clock buffer enable control signal buf_en_D from the delaying unit 50 .
- An NMOS transistor MN 1 is coupled between the control signal ctrl output and the ground.
- the gate of MN 1 is coupled to the clock buffer enable control signal buf_en_D from the delaying unit 50 .
- a first logic unit including NAND 1 and IV 1 , serially coupled, AND-operate the internal clock signal int_clk and the control signal ctrl.
- a delaying unit 52 inverts and delays the output signal of the first logic unit NAND 1 and IV 1 , serially coupled.
- the clock buffer enable control signal buf_en_D notifying completion of self refresh mode changes to a logic high only after the delay time Dt resulted from delaying unit 50 even if the internal clock signal int_clk generated at the clock buffer 30 is activated to logic high. Therefore, activation of the internal clock signal int_clk that is generated latter after self refresh completion that would otherwise case a mis-operation is prevented.
- FIG. 5 is a timing diagram explaining the operation of a self refresh controlling apparatus in accordance with the present invention. As shown in ( b ) of FIG. 5, when the clock enable signal cke becomes low, the self refresh completion control signal s_ref_exit is deactivated and the clock buffer enable control signal buf_en notifying start of the self refresh mode changes to logic high as shown in ( d ).
- the clock buffer enable control signal buf_en is delayed by the predetermined delay time Dt which is the minimum time duration required to repress activation of the internal clock signal generated late as shown in ( e ) to transfer as the control signal of the internal clock signal activation controlling unit 60 .
- the internal clock signal activation controlling unit 60 configured as shown in FIG. 4 causes the output signal of the first logic unit NAND 1 and IN 1 , serially coupled, to be low, keeping the control signal ctrl low before the delay time Dt.
- the internal clock signal int_clk is generated as logic high in completion of the self refresh operation, the internal clock signal int_clk is not generated at the internal clock signal activation controlling unit 60 before the delay time undergone at the delaying unit 50 so that a late-generated internal clock signal that could lead to a mis-operation can be pressed.
- the internal clock signal is repressed by activation control so that mismatching of the set-up time and the hold time of the command and address buffer output signal due to the internal clock signal generated late in completion of the self refresh operation and a mis-operation can be prevented.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Electric Clocks (AREA)
Abstract
Description
- 1. Field of the Invention
- The claimed inventions relate, at least generally, to a self-refresh controlling apparatus. More specifically, some of the claimed inventions feature a self refresh controlling apparatus capable of stabilizing circuit operation.
- 2. General Background and Related Art
- Generally, self-refresh denotes a refresh operation performed internally with a predetermined period to maintain data stored in a memory cell during a waiting state in a semiconductor memory as a DRAM (Dynamic Random Access Memory).
- A problem occurs due to the difficulty of adjusting the timing between the signal synchronized with the external clock signal and the signal not synchronized with the external clock signal. Furthermore, when a variety of frequencies should be adjusted, proper delays are required and the problem becomes more serious.
- FIG. 1 (Prior Art) is a block diagram of a conventional self-refresh controlling apparatus. The apparatus includes a clock enable
signal buffer 10 for buffering an externally provided clock enable signal cke and generating a self-refresh exit control signal s_ref_exit. A self-refresh logic 20 controls activation of a clock buffer enable control signal buf-en by performing the self-refresh operation depending on the state of the self-refresh exit control signal s_ref_exit from the clock enablesignal buffer 10. Aclock buffer 30 receives the clock buffer enable control signal buf-en for comparing the potential of an external input clock signal ext_clk with a reference to generate an internal clock signal int_clk. A command and addresslatch 40 latches a command and an address buffered with the internal clock signal int_clk in synchronization with the external clock signal ext_clk. - FIG. 2 (Prior Art) is a timing diagram explaining the operation of the self refresh controlling apparatus shown in FIG. 1 (Prior Art). The clock buffer enable control signal buf_en generated under control of the clock enable signal cke as shown in (d) is a signal generated that is riot synchronized with the external clock signal ext_clk.
- Therefore, when the external clock signal ext_clk is logic high during activation of the
clock buffer 30, the internal clock signal int_clk is generated latter as shown in (c). - The self refresh controlling apparatus latches the output signal of a command and address buffer (not shown) in synchronization with the external clock signal ext_clk at the command and address
latch 40 by using the internal clock signal int_clk. The output signal of the command and address buffer is adjusted so that it is applied from an external source as its set-up time and hold time match. - Subsequently, when the internal clock signal int_clk is activated latter as described above, the set-up time and the hold time of the output signal from the command and address buffer does not match, which leads error in operation that adversely affects circuit stability.
- The claimed inventions feature, at least in part, a self refresh controlling apparatus capable of stabilizing circuit operation. This stabilization is achieved by preventing failure after self refresh by matching the set-up time and the hold time of the clock buffer output signal by adjusting timing between the signal synchronized with the external clock signal and the signal not synchronized with the external clock signal. Accordingly, the self-refresh controlling apparatus of the present invention is useful for use with any semiconductor memory apparatus performing self-refresh.
- An exemplary embodiment of the claimed inventions provides a self refresh controlling apparatus including a first buffering unit for buffering a clock enable signal received from an external source to generate a self refresh completion control signal. A self refresh logic controls activation of a clock buffer enable control signal by performing self refresh operation depending on the state of the self refresh completion control signal from the first buffering unit. A second buffering unit receives the clock buffer enable control signal for comparing a potential of an external clock signal with a reference potential to generate an internal clock signal. A delay unit delays the clock buffer enable control signal by a predetermined time. An internal clock signal activation controlling unit controls activation of the internal clock signal by logically combining the internal clock signal with a control signal generated under control of the delayed clock buffer enable control signal from the delaying unit and the internal clock signal. A latching unit latches, in synchronization with the external clock signal, a command and an address buffered by the internal clock signal of which timing is adjusted at the internal clock signal activation controlling unit.
- Exemplary embodiments of the claimed inventions will be explained in detail with reference to the accompanying drawings, in which:
- FIG. 1 (Prior Art) is a block diagram of a conventional self refresh controlling apparatus;
- FIG. 2 (Prior Art) is an operational timing diagram of the conventional self refresh controlling apparatus in FIG. 1;
- FIG. 3 is a block diagram of a self refresh controlling apparatus in accordance with the present invention;
- FIG. 4 is an embodiment of a delaying unit and an internal clock signal activation controlling unit (shown as a general block in FIG. 3); and
- FIG. 5 is a timing diagram explaining the operation of a self refresh controlling apparatus in accordance with the present invention.
- Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
- FIG. 3 is a block diagram of an exemplary embodiment of a self refresh controlling apparatus constructed and arranged in accordance with the principles of the claimed inventions. A clock enable
signal buffer 10 buffers a clock enable signal cke from an external source and generates a self-refresh exit control signal s_ref_exit. Self-refresh logic 20 controls activation of a clock buffer enable control signal buf-en by performing self-refresh operation depending on the state of the self-refresh exit control signal s_ref_exit from the clock enablesignal buffer 10. Aclock buffer 30 receives the clock buffer enable control signal buf-en for comparing the potential of an external input clock signal ext_clk with a reference potential to generate an internal clock signal int_clk. A delaying unit delays the clock buffer enable control signal buf_en by a predetermined time delay Dt. An internal clock signalactivation controlling unit 60 controls activation of a new internal clock signal new_int_clk by logically combining the internal clock signal int_clk with a control signal ctrl generated under control of the clock enable control signal buf_en_D from the delayingunit 50 and the internal clock signal int_clk. A command andaddress latch 40 latches, in synchronization with the external clock signal ext_clk, a command and an address buffered with the internal clock signal int_clk of which activation timing is adjusted at the internal clock signalactivation controlling unit 60. -
Clock buffer 30 generates the internal clock signal int_clk. Delayingunit 50 delays the clock buffer enable controlling signal buf_en from theself refresh logic 20 by the time delay Dt. Internal clock signalactivation controlling unit 60 provides the control signal for the command and address latch by adjusting the activation timing of the internal clock signal int_clk delay at the delayingunit 50. The following description focuses onelements - FIG. 4 is a schematic diagram of an embodiment of a delaying unit and an internal clock signal activation controlling unit60 (shown in FIG. 3). The delaying
unit 50 can be simply constructed utilizing an inverter chain structure forming minimum delay Dt required to activate the clock buffer enable control signal buf_en later than the internal clock signal int_clk. - Internal clock signal
activation controlling unit 60 includes a first and a second PMOS transistors MP1, MP2 serially coupled between the power voltage input and the control signal ctrl output. The gate of transistor MP2 is coupled to receive int_clk. The gate of transistor MP1 is coupled to receive the clock buffer enable control signal buf_en_D from the delayingunit 50. An NMOS transistor MN1 is coupled between the control signal ctrl output and the ground. The gate of MN1 is coupled to the clock buffer enable control signal buf_en_D from the delayingunit 50. A first logic unit including NAND1 and IV1, serially coupled, AND-operate the internal clock signal int_clk and the control signal ctrl. A delayingunit 52 inverts and delays the output signal of the first logic unit NAND1 and IV1, serially coupled. A second logic unit including NAND2 and IV2, serially coupled, AND-operate the output of the first logic unit NAND1 and IV1, serially coupled, and the output signal of the delayingunit 52. - Because of the configuration of delaying
unit 50 and the internal clock signal activation control unit 60 d as described above, the clock buffer enable control signal buf_en_D notifying completion of self refresh mode changes to a logic high only after the delay time Dt resulted from delayingunit 50 even if the internal clock signal int_clk generated at theclock buffer 30 is activated to logic high. Therefore, activation of the internal clock signal int_clk that is generated latter after self refresh completion that would otherwise case a mis-operation is prevented. - FIG. 5 is a timing diagram explaining the operation of a self refresh controlling apparatus in accordance with the present invention. As shown in (b) of FIG. 5, when the clock enable signal cke becomes low, the self refresh completion control signal s_ref_exit is deactivated and the clock buffer enable control signal buf_en notifying start of the self refresh mode changes to logic high as shown in (d).
- Accordingly, if the internal clock signal int_clk is not generated as shown in (c) and the self refresh operation is started. At this time, because the clock buffer enable control signal buf_en is not synchronized with the external clock signal ext_elk, the internal clock signal int_clk is generated late as shown in (c) when the external clock signal ext_clk becomes high when the
clock buffer 30 is again activated after completion of the self refresh operation. - In order to repress the internal clock signal int_clk that is generated late and could lead to a mis-operation, the clock buffer enable control signal buf_en is delayed by the predetermined delay time Dt which is the minimum time duration required to repress activation of the internal clock signal generated late as shown in (e) to transfer as the control signal of the internal clock signal
activation controlling unit 60. - Then, because the clock buffer enable control signal buf_en changes to a logic low only after the delay time Dt even when the internal clock signal int_clk generated at the
internal clock buffer 30 is activated to logic high, the internal clock signalactivation controlling unit 60 configured as shown in FIG. 4 causes the output signal of the first logic unit NAND1 and IN1, serially coupled, to be low, keeping the control signal ctrl low before the delay time Dt. - Accordingly, even though the internal clock signal int_clk is generated as logic high in completion of the self refresh operation, the internal clock signal int_clk is not generated at the internal clock signal
activation controlling unit 60 before the delay time undergone at the delayingunit 50 so that a late-generated internal clock signal that could lead to a mis-operation can be pressed. - In the self refresh controlling apparatus of the present invention, the internal clock signal is repressed by activation control so that mismatching of the set-up time and the hold time of the command and address buffer output signal due to the internal clock signal generated late in completion of the self refresh operation and a mis-operation can be prevented.
- While the present invention has been shown and described with respect to the particular embodiments, it will be apparent to those skilled in the art that many changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1999-60931 | 1999-12-23 | ||
KR99-60931 | 1999-12-23 | ||
KR1019990060931A KR100328556B1 (en) | 1999-12-23 | 1999-12-23 | Self reflesh controller |
Publications (2)
Publication Number | Publication Date |
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US20010028589A1 true US20010028589A1 (en) | 2001-10-11 |
US6333886B2 US6333886B2 (en) | 2001-12-25 |
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US09/745,427 Expired - Fee Related US6333886B2 (en) | 1999-12-23 | 2000-12-26 | Self-refresh controlling apparatus |
Country Status (4)
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US (1) | US6333886B2 (en) |
JP (1) | JP4618879B2 (en) |
KR (1) | KR100328556B1 (en) |
TW (1) | TW498338B (en) |
Cited By (2)
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EP1671357A2 (en) * | 2003-10-09 | 2006-06-21 | Micron Technology, Inc. | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
US20110075502A1 (en) * | 2009-09-30 | 2011-03-31 | Hynix Semiconductor Inc. | Bank active signal generation circuit |
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DE10002374C2 (en) * | 2000-01-20 | 2002-10-17 | Infineon Technologies Ag | Semiconductor memory arrangement with refresh logic circuit and method for refreshing the memory content of a semiconductor memory arrangement |
KR100495916B1 (en) | 2002-11-20 | 2005-06-17 | 주식회사 하이닉스반도체 | Semiconductor device with CKE buffer |
KR100646940B1 (en) * | 2003-12-15 | 2006-11-17 | 주식회사 하이닉스반도체 | Refresh controller with low peak current |
KR100573831B1 (en) * | 2004-03-03 | 2006-04-26 | 주식회사 하이닉스반도체 | Semiconductor memory device having safely entery and exit for self-refresh mode |
KR100623601B1 (en) * | 2005-03-31 | 2006-09-14 | 주식회사 하이닉스반도체 | Semiconductor memory device |
KR100700331B1 (en) * | 2005-08-17 | 2007-03-29 | 주식회사 하이닉스반도체 | Device for controlling self refresh current |
KR100791918B1 (en) * | 2006-05-08 | 2008-01-04 | 삼성전자주식회사 | Temperature sensor having self-calibration function and method there-of |
KR100772689B1 (en) * | 2006-09-29 | 2007-11-02 | 주식회사 하이닉스반도체 | Memory device which includes small clock buffer |
KR100899394B1 (en) * | 2007-10-31 | 2009-05-27 | 주식회사 하이닉스반도체 | Refresh controlling circuit |
KR100937939B1 (en) * | 2008-04-24 | 2010-01-21 | 주식회사 하이닉스반도체 | Internal voltage generator of semiconductor device |
KR100945940B1 (en) | 2008-06-27 | 2010-03-05 | 주식회사 하이닉스반도체 | Circuit of generating refresh signal |
KR101096262B1 (en) * | 2009-12-29 | 2011-12-23 | 주식회사 하이닉스반도체 | Clock generation circuit comprising clock control circuit |
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JP2000357390A (en) * | 1999-06-11 | 2000-12-26 | Hitachi Ltd | Pulse generating circuit |
KR100311974B1 (en) * | 1999-06-15 | 2001-11-02 | 윤종용 | Internal clock generating circuit for use in synchronous type semiconductor memory device and internal clock generating method |
US6195303B1 (en) * | 1999-10-25 | 2001-02-27 | Winbond Electronics Corporation | Clock-based transparent refresh mechanisms for DRAMS |
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- 1999-12-23 KR KR1019990060931A patent/KR100328556B1/en not_active IP Right Cessation
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- 2000-12-22 TW TW089127723A patent/TW498338B/en not_active IP Right Cessation
- 2000-12-22 JP JP2000390975A patent/JP4618879B2/en not_active Expired - Fee Related
- 2000-12-26 US US09/745,427 patent/US6333886B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1671357A2 (en) * | 2003-10-09 | 2006-06-21 | Micron Technology, Inc. | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
US20060274592A1 (en) * | 2003-10-09 | 2006-12-07 | Schoenfeld Aaron M | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
EP1671357A4 (en) * | 2003-10-09 | 2007-03-14 | Micron Technology Inc | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
KR100903012B1 (en) | 2003-10-09 | 2009-06-17 | 마이크론 테크놀로지 인코포레이티드 | A method of executing a refresh operation, and a memory device and a processor-based system therefor, for low power refresh operation |
US7606101B2 (en) | 2003-10-09 | 2009-10-20 | Micron Technology, Inc. | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
US20100014371A1 (en) * | 2003-10-09 | 2010-01-21 | Schoenfeld Aaron M | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
US7983110B2 (en) | 2003-10-09 | 2011-07-19 | Round Rock Research, Llc | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
US8400868B2 (en) | 2003-10-09 | 2013-03-19 | Round Rock Research, Llc | Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
US20110075502A1 (en) * | 2009-09-30 | 2011-03-31 | Hynix Semiconductor Inc. | Bank active signal generation circuit |
US8233348B2 (en) * | 2009-09-30 | 2012-07-31 | Hynix Semiconductor Inc. | Bank active signal generation circuit |
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KR100328556B1 (en) | 2002-03-15 |
JP4618879B2 (en) | 2011-01-26 |
JP2001222887A (en) | 2001-08-17 |
TW498338B (en) | 2002-08-11 |
KR20010057488A (en) | 2001-07-04 |
US6333886B2 (en) | 2001-12-25 |
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