US1765335A - Electric-current valve - Google Patents
Electric-current valve Download PDFInfo
- Publication number
- US1765335A US1765335A US212603A US21260327A US1765335A US 1765335 A US1765335 A US 1765335A US 212603 A US212603 A US 212603A US 21260327 A US21260327 A US 21260327A US 1765335 A US1765335 A US 1765335A
- Authority
- US
- United States
- Prior art keywords
- resistance
- current
- electric
- inverse
- current valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 4
- 229910000431 copper oxide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/168—Treatment of the complete device, e.g. electroforming, ageing
Definitions
- the pertinent characteristic of these copper oxide films is their diflerential resistance to currents oppositein direction. It is therefore requisite to stabilize two resistances; namely, the resistance to the useful current hereinafter called the useful resistance, and the resistance to the inverse current hereinafter called the inverse resistance.
- the obj'ectof the present invention is to provide the process by which the resistance to the current phase to be suppressed can be developed and stabilized within a relatively short period of time, thereby permitting the segregation and elimination of those elements initially possessed of a predisposition to undesirable deterioration.
- This process substantially develops the ultimate inverse resistance characteristics of the valve element, thereby permitting selection and discarding of elements in relation to the desired characteristics of the contemplated rectifier and its intended use.
- the method of developing the ultimate inverse resistance of copper oxide current valves which comprises, subjecting the elements to electrical potential in the direction of the proposed inverse current, said potential from 100%400% in excess of that to c which the elements are to be subjected in service- -for a period of approximately an hour.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Description
Patented June 17, 193i) NITED STATES PATENT orrrcn:
ROBERT C. JACQUELET, OF NOBWOOD, OHIO ELECTRIC-CURRENT VALVE No Drawing.
while in service. The tendency of the recti fiers heretofore produced has been to de 15.crease in out-put over the course of the first several weeks of usage. Moreover, practically no two rectifiers behave in the same manner under exactly the same conditions.
Some lose their desirable properties more rapidly and.more completely than others.
Obviously a test lasting several weeks on each rectifier or on each plate thereof, which would be necessary to supply rectifiers for uses requiring any constancy would be a highly impractical and uncommercial proposition.
The pertinent characteristic of these copper oxide films is their diflerential resistance to currents oppositein direction. It is therefore requisite to stabilize two resistances; namely, the resistance to the useful current hereinafter called the useful resistance, and the resistance to the inverse current hereinafter called the inverse resistance.
The obj'ectof the present invention is to provide the process by which the resistance to the current phase to be suppressed can be developed and stabilized within a relatively short period of time, thereby permitting the segregation and elimination of those elements initially possessed of a predisposition to undesirable deterioration.
()ne important factor enters into the inverse resistance or its absence and that is the presence of ununiform spots or areas in the copper oxide film, which areas are often possessed of low, questionable or uncertain rectifying properties. These areas are often due to the presence of foreign matter in the 50 film but may also be due to other causes.
Application filed August 12, 1927. Serial No. 212,603.
When the rectifier is in service, the resistance often lessens gradually at and about these aforesaid areas, with the result that more inverse current leaks through and the output is diminished. This preinclination toward deterioration or decreasing resistance in minute and often isolated areas can be and is developed and detected by subjecting the rectifying element to a potential in the direction of the proposed inverse current of from 100 to 400 per cent greater than the potential to which the rectifying element was designed to be subjectedpreferably for a period of approximately an hour or less.
This process substantially develops the ultimate inverse resistance characteristics of the valve element, thereby permitting selection and discarding of elements in relation to the desired characteristics of the contemplated rectifier and its intended use.
Having described my invention, I claim: 1. The method of developing the ultimate inverse resistance of copper oxide current valves, which comprises, subjecting the elementsto electrical potential in the direction of the proposed inverse current, said potential from 100%400% in excess of that to which the elements are to be subjected in I service. a
2. The method of developing the ultimate inverse resistance of copper oxide current valves, which comprises, subjecting the elements to electrical potential in the direction of the proposed inverse current, said potential from 100%400% in excess of that to c which the elements are to be subjected in service- -for a period of approximately an hour.
In witness whereof, I hereunto subscribe n my name.
ROBERT C. JACQUELET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US212603A US1765335A (en) | 1927-08-12 | 1927-08-12 | Electric-current valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US212603A US1765335A (en) | 1927-08-12 | 1927-08-12 | Electric-current valve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US1765335A true US1765335A (en) | 1930-06-17 |
Family
ID=22791709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US212603A Expired - Lifetime US1765335A (en) | 1927-08-12 | 1927-08-12 | Electric-current valve |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US1765335A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0190605A2 (en) * | 1985-01-31 | 1986-08-13 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Process for locally altering the atomic composition of solid bodies, especially semiconductors |
-
1927
- 1927-08-12 US US212603A patent/US1765335A/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0190605A2 (en) * | 1985-01-31 | 1986-08-13 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Process for locally altering the atomic composition of solid bodies, especially semiconductors |
| EP0190605A3 (en) * | 1985-01-31 | 1989-07-12 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Process for locally altering the atomic composition of solid bodies, especially semiconductors |
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