US12267052B2 - Power amplifying device - Google Patents
Power amplifying device Download PDFInfo
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- US12267052B2 US12267052B2 US17/653,543 US202217653543A US12267052B2 US 12267052 B2 US12267052 B2 US 12267052B2 US 202217653543 A US202217653543 A US 202217653543A US 12267052 B2 US12267052 B2 US 12267052B2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3022—CMOS common source output SEPP amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45418—Indexing scheme relating to differential amplifiers the CMCL comprising a resistor addition circuit
Definitions
- Embodiments described herein relate generally to a power amplifying device.
- BTL Bridge-Tied Load, or Bridged Transformer Less
- FIG. 1 is a circuit diagram showing an example of a power amplifying device according to a first embodiment.
- FIG. 2 is a circuit diagram showing an example of an operational amplifier included in the power amplifying device according to the first embodiment.
- FIG. 3 is a circuit diagram showing an example of a limiter circuit included in the power amplifying device according to the first embodiment.
- FIG. 4 is a circuit diagram showing an example of an intermediate voltage generator included in the power amplifying device according to the first embodiment.
- FIG. 5 is a flowchart showing an operation of the power amplifying device according to the first embodiment.
- FIG. 6 is a diagram illustrating the advantageous effects of the power amplifying device according to the first embodiment.
- FIG. 7 is a circuit diagram showing an example of an operational amplifier included in a power amplifying device according to a first modification of the first embodiment.
- FIG. 8 is a circuit diagram showing an example of a limiter circuit included in a power amplifying device according to a second modification of the first embodiment.
- FIG. 9 is a circuit diagram showing an example of a power amplifying device according to a second embodiment.
- a power amplifying device includes a first amplifier including a plurality of input terminals to which a plurality of voltages are applied, respectively, the first amplifier being configured to output a first output signal, a second amplifier including a plurality of input terminals to which a plurality of voltages are applied, respectively, the second amplifier being configured to output a second output signal, a first circuit configured to output a third signal obtained by limiting a magnitude of a voltage value of the first output signal and a fourth signal obtained by limiting a magnitude of a voltage value of the second output signal, and a second circuit configured to transmit an average value of a voltage value of the third signal and a voltage value of the fourth signal, as a first feedback voltage to the first amplifier and the second amplifier.
- a power amplifying device according to a first embodiment will be described.
- a BTL amplifier will be described as an example of the power amplifying device.
- FIG. 1 is a circuit diagram showing an example of the power amplifying device.
- a power amplifying device 1 includes a power supply voltage interconnect 2 , a ground voltage interconnect 3 , a power supply voltage terminal T 1 , a ground voltage terminal T 2 , input terminals Tinp 1 and Tinm 1 , output terminals Toutp 1 and Toutm 1 , resistance elements Rs 1 and Rs 2 , a first operational amplifier A 1 , a second operational amplifier A 2 , resistance elements Rf 1 and Rf 2 , a limiter circuit LIM 1 , and an intermediate voltage generator CMFB 1 .
- the power supply voltage interconnect 2 is coupled to the power supply voltage terminal T 1 , and a power supply voltage VCC is externally applied thereto.
- the ground voltage interconnect 3 is coupled to the ground voltage terminal T 2 , and a ground voltage VSS is externally applied thereto.
- a signal INP 1 is externally input to the input terminal Tinp 1 .
- a signal INM 1 is externally input to the input terminal Tinm 1 .
- the signal INM 1 is a signal obtained by inverting a phase of a signal INP 1 .
- the resistance element Rs 1 has one end coupled to the input terminal Tinp 1 , and the other end coupled to a node ND 1 .
- the resistance element Rs 2 has one end coupled to the input terminal Tinm 1 , and the other end coupled to a node ND 2 .
- the first operational amplifier A 1 has a first power supply voltage terminal coupled to the power supply voltage interconnect 2 , and a second power supply voltage terminal coupled to the ground voltage interconnect 3 .
- the first operational amplifier A 1 includes a first non-inversion input terminal (hereinafter also referred to as a “TDFBp 1 terminal”), a second non-inversion input terminal (hereinafter also referred to as a “TCFBp 1 terminal”), a first inversion input terminal (hereinafter also referred to as a “TDFBm 1 terminal”), and a second inversion input terminal (hereinafter also referred to as a “TCFBm 1 terminal”).
- the first operational amplifier A 1 has the TDFBp 1 terminal coupled to the node ND 1 , the TCFBp 1 terminal coupled to a node ND 3 , the TDFBm 1 terminal coupled to the node ND 2 , and the TCFBm 1 terminal coupled to a node ND 4 .
- a reference voltage VCMREF 1 is applied to the node ND 3 .
- the reference voltage VCMREF 1 is, for example, a voltage VCC/2; however, it is not limited thereto.
- An output terminal of the first operational amplifier A 1 is coupled to the output terminal Toutp 1 .
- the first operational amplifier A 1 amplifies a voltage based on a voltage Vinp 1 of the node ND 1 which is applied to the TDFBp 1 terminal, a voltage Vinm 1 of the node ND 2 which is applied to the TDFBm 1 terminal, a voltage (reference voltage VCMREF 1 ) of the node ND 3 which is applied to the TCFBp 1 terminal, and a voltage (feedback voltage VCMFB 1 to be described later) of the node ND 4 which is applied to the TCFBm 1 terminal.
- the first operational amplifier A 1 then outputs the amplified voltage as a signal OUTP 1 .
- the signal OUTP 1 is output from the output terminal Toutp 1 .
- a configuration of the first operational amplifier A 1 will be described later in detail.
- the second operational amplifier A 2 has a first power supply voltage terminal coupled to the power supply voltage interconnect 2 , and a second power supply voltage terminal coupled to the ground voltage interconnect 3 .
- the second operational amplifier A 2 includes a first non-inversion input terminal (hereinafter also referred to as a “TDFBp 2 terminal”), a second non-inversion input terminal (hereinafter also referred to as a “TCFBp 2 terminal”), a first inversion input terminal (hereinafter also referred to as a “TDFBm 2 terminal”), and a second inversion input terminal (hereinafter also referred to as a “TCFBm 2 terminal”).
- the second operational amplifier A 2 has the first non-inversion input terminal coupled to the node ND 2 , the second non-inversion input terminal coupled to the node ND 3 , the first inversion input terminal coupled to the node ND 1 , and the second inversion input terminal coupled to the node ND 4 .
- An output terminal of the second operational amplifier A 2 is coupled to the output terminal Toutm 1 .
- the second operational amplifier A 2 amplifies a voltage based on the voltage Vinm 1 of the node ND 2 which is applied to the TDFBp 2 terminal, the voltage Vinp 1 of the node ND 1 which is applied to the TDFBm 2 terminal, the voltage (reference voltage VCMREF 1 ) of the node ND 3 which is applied to the TCFBp 2 terminal, and the voltage (feedback voltage VCMFB 1 to be described later) of the node ND 4 which is applied to the TCFBm 2 terminal.
- the second operational amplifier A 2 then outputs the amplified voltage as a signal OUTM 1 .
- the signal OUTM 1 is output from the output terminal Toutm 1 .
- a configuration of the second operational amplifier A 2 will be described later in detail.
- the resistance element Rf 1 has one end coupled to the output terminal Toutp 1 and the other end coupled to the node ND 2 .
- the signal OUTP 1 is fed back to the TDFBm 1 terminal of the first operational amplifier A 1 with the resistance element Rf 1 intervening therebetween.
- the resistance element Rf 2 has one end coupled to the output terminal Toutm 1 and the other end coupled to the node ND 1 .
- the signal OUTM 1 is fed back to the TDFBm 2 terminal of the second operational amplifier A 2 with the resistance element Rf 2 intervening therebetween.
- a feedback operation through the resistance elements Rf 1 and Rf 2 will be referred to as a “first feedback operation”.
- the voltage VLIM 1 is applied to the limiter circuit LIM 1 .
- the limiter circuit LIM 1 is coupled to the output terminals Toutp 1 and Toutm 1 .
- the limiter circuit LIM 1 receives the signal OUTP 1 from the first operational amplifier A 1 , and receives the signal OUTM 1 from the second operational amplifier A 2 .
- the limiter circuit LIM 1 is coupled to the intermediate voltage generator CMFB 1 .
- the limiter circuit LIM 1 transmits a signal OUTPLIM 1 based on the signal OUTP 1 and a signal OUTMLIM 1 based on the signal OUTM 1 to the intermediate voltage generator CMFB 1 .
- the limiter circuit LIM 1 limits a magnitude of a voltage value of the signals OUTP 1 and OUTM 1 (the maximum voltage value or minimum voltage value of the signals OUTP 1 and OUTM 1 ) based on the voltage VLIM 1 .
- the voltage VLIM 1 is a voltage for determining the maximum voltage value or minimum voltage value of the signals OUTP 1 and OUTM 1 . A configuration of the limiter circuit LIM 1 will be described later in detail.
- the limiter circuit LIM 1 determines a maximum voltage value Vmax of the signals OUTP 1 and OUTM 1 based on the voltage VLIM 1 . In the case of the signals OUTP 1 and OUTM 1 being smaller than the maximum voltage value Vmax, the limiter circuit LIM 1 transmits the signals OUTP 1 and OUTM 1 as the signals OUTPLIM 1 and OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- the limiter circuit LIM 1 transmits the maximum voltage value Vmax as the signals OUTPLIM 1 and OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- the limiter circuit LIM 1 determines a minimum voltage value Vmin of the signals OUTP 1 and OUTM 1 based on the voltage VLIM 1 . In the case of the signals OUTP 1 and OUTM 1 being greater than the minimum voltage value Vmin, the limiter circuit LIM 1 transmits the signals OUTP 1 and OUTM 1 as the signals OUTPLIM 1 and OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- the limiter circuit LIM 1 transmits the minimum voltage value Vmin as the signals OUTP 1 and OUTM 1 to the intermediate voltage generator CMFB 1 .
- the intermediate voltage generator CMFB 1 is coupled to the node ND 4 .
- the intermediate voltage generator CMFB 1 generates an average value of the signals OUTPLIM 1 and OUTMLIM 1 received from the limiter circuit LIM 1 .
- the intermediate voltage generator CMFB 1 transmits the generated average value as the feedback voltage VCMFB 1 to the node ND 4 .
- the voltage VCMFB 1 is fed back from the intermediate voltage generator CMFB 1 to the TCFBm 1 terminal of the first operational amplifier A 1 and the TCFBm 2 terminal of the second operational amplifier A 2 .
- a configuration of the intermediate voltage generator CMFB 1 will be described later in detail.
- a feedback operation through the limiter circuit LIM 1 and the intermediate voltage generator CMFB 1 will be referred to as a “second feedback operation”.
- FIG. 2 is a circuit diagram showing an example of the first operational amplifier A 1 .
- the second operational amplifier A 2 has a similar configuration to that of the first operational amplifier A 1 .
- a source and a drain of a transistor are not distinguished from each other, one of them will be referred to as “one end of a transistor or a first end of a transistor” and the other of them will be referred to as “the other end of the transistor or a second end of the transistor”.
- the first operational amplifier A 1 includes a first transconductance circuit Gm_DFB, a second transconductance circuit Gm_CFB, a resistance element R 1 , a driver stage circuit DS, a p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) (hereinafter, also referred to as a “PMOS transistor”) P 1 , and an n-channel MOSFET (hereinafter, also referred to as an “NMOS transistor”) N 1 .
- MOSFET Metal Oxide Semiconductor Field Effect Transistor
- the first transconductance circuit Gm_DFB has a non-inversion input terminal coupled to the TDFBp 1 terminal of the first operational amplifier A 1 , and an inversion input terminal coupled to the TDFBm 1 terminal of the first operational amplifier A 1 .
- An output terminal of the first transconductance circuit Gm_DFB is coupled to a node ND 5 .
- the first transconductance circuit Gm_DFB outputs a current Idfb based on a voltage difference between the voltage Vinp 1 applied from the node ND 1 to the non-inversion input terminal and the voltage Vinm 1 applied from the node ND 2 to the inversion input terminal.
- a transconductance gm of the first transconductance circuit Gm_DFB is set to a given value. In the case of no voltage difference between the voltage Vinp 1 and the voltage Vinm 1 , the current Idfb is equal to 0.
- the second transconductance circuit Gm_CFB has a non-inversion input terminal coupled to the TCFBp 1 terminal of the first operational amplifier A 1 , and an inversion input terminal coupled to the TCFBm 1 terminal of the first operational amplifier A 1 .
- An output terminal of the second transconductance circuit Gm_CFB is coupled to the node ND 5 .
- the second transconductance circuit Gm_CFB outputs a current Icfb based on a voltage difference between the reference voltage VCMREF 1 applied from the node ND 3 to the non-inversion input terminal and the feedback voltage VCMFB 1 applied from the node ND 4 to the inversion input terminal.
- a transconductance gm of the second transconductance circuit Gm_CFB is set to a given value. In the case of no voltage difference between the reference voltage VCMREF 1 and the feedback voltage VCMFB 1 , the current Icfb is equal to 0.
- One end of the resistance element R 1 is connected to the node ND 5 , and the other end is grounded.
- a current Ir obtained by combining the current Idfb and the current Icfb flows through the resistance element R 1 .
- the current Ir is converted into a voltage Vr.
- the voltage VCC is applied to a first power supply voltage terminal (not shown) of the driver stage circuit DS, and the voltage VSS is applied to a second power supply voltage terminal (not shown) of the driver stage circuit DS.
- the driver stage circuit DS has an input terminal coupled to the node ND 5 , and an output terminal coupled to nodes ND 6 and ND 7 .
- the voltage Vr is applied to the driver stage circuit DS.
- the driver stage circuit DS amplifies the voltage Vr and outputs the amplified voltage, thereby driving the PMOS transistor P 1 and the NMOS transistor N 1 , which take a push-pull configuration.
- the PMOS transistor P 1 has one end to which the voltage VCC is applied, the other end coupled to a node ND 8 , and a gate coupled to the node ND 6 .
- the PMOS transistor P 1 is turned on when a voltage difference between a voltage of the node ND 6 and the voltage VCC exceeds a threshold voltage of the PMOS transistor P 1 , and outputs a current in accordance with the voltage difference between the voltage of the node ND 6 and the voltage VCC to the node ND 8 .
- the NMOS transistor N 1 has one end coupled to the node ND 8 , the other end to which the voltage VSS is applied, and a gate coupled to the node ND 7 .
- the NMOS transistor N 1 is turned on when a voltage difference between a voltage of the node ND 7 and the ground voltage VSS exceeds a threshold voltage of the NMOS transistor N 1 , and outputs a current in accordance with the voltage difference between the voltage of the node ND 7 and the voltage VSS to the node ND 8 .
- a voltage of the node ND 8 is controlled in accordance with a value of the current output from the PMOS transistor P 1 or the NMOS transistor N 1 . That is, the signal OUTP 1 is determined.
- the first operational amplifier A 1 outputs, as the signal OUTP 1 , a voltage obtained by amplifying the voltage Vr to the positive side.
- the first operational amplifier A 1 outputs, as the signal OUTP 1 , a voltage obtained by amplifying the voltage Vr to the negative side.
- FIG. 3 is a circuit diagram showing a limiter circuit for a low-side amplifier, as an example of the limiter circuit LIM 1 .
- the limiter circuit LIM 1 includes NMOS transistors N 2 and N 3 .
- the NMOS transistor N 2 has one end coupled to the output terminal Toutp 1 , the other end coupled to the intermediate voltage generator CMFB 1 , and a gate to which the voltage VLIM 1 applied.
- the voltage VLIM 1 is greater than, for example, the reference voltage VCMREF 1 , and is a voltage that turns on the NMOS transistor N 2 .
- a maximum voltage value Vmaxp of the signal OUTP 1 is determined based on the voltage VLIM 1 . In the case of the signal OUTP 1 being smaller than the maximum voltage value Vmaxp, a voltage value of the signal OUTPLIM 1 is equal to a voltage value of the signal OUTP 1 .
- the limiter circuit LIM 1 transmits the signal OUTP 1 as the signal OUTPLIM 1 to the intermediate voltage generator CMFB 1 .
- a voltage value of the signal OUTPLIM 1 is equal to the maximum voltage value Vmaxp.
- the limiter circuit LIM 1 transmits the maximum voltage value Vmaxp as the signal OUTPLIM 1 to the intermediate voltage generator CMFB 1 .
- the NMOS transistor N 3 has one end coupled to the output terminal Toutp 1 , the other end coupled to the intermediate voltage generator CMFB 1 , and a gate to which the voltage VLIM 1 is applied.
- the voltage VLIM 1 is greater than, for example, the reference voltage VCMREF 1 and is a voltage that turns on the NMOS transistor N 3 .
- the maximum voltage value Vmaxm of the signal OUTM 1 is determined based on the voltage VLIM 1 . In the case of the signal OUTM 1 being smaller than the maximum voltage value Vmaxm, a voltage value of the signal OUTMLIM 1 is equal to a voltage value of the signal OUTM 1 .
- the limiter circuit LIM 1 transmits the signal OUTM 1 as the signal OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- a voltage value of the signal OUTMLIM 1 is equal to the maximum voltage value Vmaxm.
- the limiter circuit LIM 1 transmits the maximum voltage value Vmaxm as the signal OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- FIG. 4 is a circuit diagram showing an example of the intermediate voltage generator CMFB 1 .
- the intermediate voltage generator CMFB 1 includes resistance elements R 2 and R 3 .
- the resistance elements R 2 and R 3 are equal in terms of resistance value.
- the resistance element R 2 has one end coupled to the limiter circuit LIM 1 , and the other end coupled to the node ND 4 .
- the resistance element R 3 has one end coupled to the node ND 4 , and the other end coupled to the limiter circuit LIM 1 .
- the intermediate voltage generator CMFB 1 transmits an average value of a voltage value of the signal OUTPLIM 1 and a voltage value of the signal OUTMLIM 1 as the feedback voltage VCMFB 1 to the node ND 4 .
- FIG. 5 is a flowchart showing the feedback operation of the power amplifying device 1 .
- the second feedback operation will be described hereinafter.
- the limiter circuit LIM 1 generates the signal OUTPLIM 1 based on the voltage VLIM 1 and the signal OUTP 1 , and generates the signal OUTMLIM 1 based on the voltage VLIM 1 and the signal OUTM 1 (S 10 ).
- the intermediate voltage generator CMFB 1 generates an average value of a voltage value of the signal OUTPLIM 1 and a voltage value of the signal OUTMLIM 1 (S 11 ).
- the intermediate voltage generator CMFB 1 transmits the average value generated in S 11 as the feedback voltage VCMFB 1 to the TCFBm 1 terminal of the first operational amplifier A 1 and the TCFBm 2 terminal of the second operational amplifier A 2 (S 12 ).
- FIG. 6 is a diagram illustrating the advantageous effects of the power amplifying device 1 according to the present embodiment.
- FIG. 6 shows waveforms of the signal OUTP 1 , the signal OUTM 1 , and a signal corresponding to a difference (OUTP 1 ⁇ OUTM 1 ) between the signal OUTP 1 and the signal OUTM 1 .
- the reference voltage VCMREF 1 is set to be smaller than the voltage VCC/2 and greater than the voltage VSS.
- the signals OUTP 1 and OUTM 1 are not clipped (non-clip).
- the amplitude of the signals OUTP 1 and OUTM 1 is vertically symmetric, and the feedback voltage VCMFB 1 is maintained to a fixed value equal to the reference voltage VCMREF 1 .
- the signals OUTP 1 and OUTM 1 are clipped on the voltage VSS side.
- the unclipped signal OUTP 1 or OUTM 1 increases in amplitude because of the first feedback operation, so that the signals OUTP 1 and OUTM 1 become no longer vertically symmetric.
- the limiter circuit LIM 1 limits the maximum voltage value Vmax of the signals OUTP 1 and OUTM 1 based on the voltage VLIM 1 . Therefore, a voltage value of the signals OUTPLIM 1 and OUTMLIM 1 becomes smaller than or equal to the maximum voltage value Vmax determined based on the voltage VLIM 1 .
- the limiter circuit LIM 1 transmits the signals OUTPLIM 1 and OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- the intermediate voltage generator CMFB 1 generates an average value of a voltage value of the signal OUTPLIM 1 and a voltage value of the signal OUTMLIM 1 , and transmits the average value as the feedback voltage VCMFB 1 to the first operational amplifier A 1 and the second operational amplifier A 2 .
- a voltage value of the signals OUTPLIM 1 and OUTMLIM 1 is limited to the maximum voltage value Vmax or smaller.
- the feedback voltage VCMFB 1 is maintained to a fixed value equal to the reference voltage VCMREF 1 . That is, the configuration according to the present embodiment reduces variations in midpoint potential of the signals OUTP 1 and OUTM 1 .
- a gain of the first operational amplifier A 1 takes on a fixed value Rf 1 /Rs 1
- a gain of the second operational amplifier A 2 takes on a fixed value Rf 2 /Rs 2 . This can suppress deterioration in distortion of the signals OUTP 1 and OUTM 1 and OUTP 1 ⁇ OUTM 1 .
- the present embodiment can improve operation reliability of the power amplifying device.
- the power amplifying device 1 according to a first modification of the first embodiment will be described.
- the power amplifying device 1 according to the present modification differs from the first embodiment in terms of the configuration of the first operational amplifier A 1 and the second operational amplifier A 2 .
- the following description will in principle concentrate on the features different from the first embodiment.
- FIG. 7 is a circuit diagram showing an example of the first operational amplifier A 1 .
- the second operational amplifier A 2 has a similar configuration to that of the first operational amplifier A 1 .
- the first transconductance circuit Gm_DFB, the second transconductance circuit Gm_CFB, and the resistance element R 1 are eliminated from the first operational amplifier A 1 .
- the first operational amplifier A 1 further includes a first voltage control voltage source A_DFB and a second voltage control voltage source A_CFB.
- the first voltage control voltage source A_DFB has a first power supply voltage terminal coupled to the node ND 5 , and a second power supply voltage terminal coupled to a node ND 9 .
- the first voltage control voltage source A_DFB has a non-inversion input terminal coupled to the TDFBp 1 terminal of the first operational amplifier A 1 , and an inversion input terminal coupled to the TDFBm 1 terminal of the first operational amplifier A 1 .
- the first voltage control voltage source A_DFB outputs a voltage difference dVdfb between the voltage Vinp 1 applied from the node ND 1 to the non-inversion input terminal and the voltage Vinm 1 applied from the node ND 2 to the inversion input terminal.
- the amplification factor of the first voltage control voltage source A_DFB is set to a given value.
- the second voltage control voltage source A_CFB has a first power supply voltage terminal coupled to the node ND 9 , and the second power supply voltage terminal which is ground.
- the second voltage control voltage source A_CFB outputs a voltage difference dVcfb between the reference voltage VCMREF 1 applied from the node ND 3 to the non-inversion input terminal and the feedback voltage VCMFB 1 applied from the node ND 4 to the inversion input terminal.
- the amplification factor of the second voltage control voltage source A_CFB is set to a given value.
- the rest of the configuration of the first operational amplifier A 1 is similar to that of FIG. 2 according to the first embodiment.
- a voltage Vd obtained by combining the voltage difference dVdfb and the voltage difference dVcfb is applied to the driver stage circuit DS.
- the driver stage circuit DS amplifies the voltage Vd and outputs the amplified voltage, thereby driving the PMOS transistor P 1 and the NMOS transistor N 1 , which take a push-pull configuration.
- the power amplifying device 1 according to a second modification of the first embodiment will be described.
- the power amplifying device 1 according to the present modification differs from the first embodiment in terms of the configuration of the limiter circuit LIM 1 .
- the following description will in principle concentrate on the features different from the first embodiment.
- FIG. 8 is a circuit diagram showing a limiter circuit for a high-side amplifier, as an example of the limiter circuit LIM 1 .
- the limiter circuit LIM 1 includes PMOS transistors P 2 and P 3 .
- the PMOS transistor P 2 has one end coupled to the output terminal Toutp 1 , the other end coupled to the intermediate voltage generator CMFB 1 , and a gate to which the voltage VLIM 1 is applied.
- the voltage VLIM 1 is smaller than, for example, the reference voltage VCMREF 1 and is a voltage that turns on the PMOS transistor P 2 .
- the minimum voltage value Vminp of the signal OUTP 1 is determined based on the voltage VLIM 1 . In the case of the signal OUTP 1 being greater than the minimum voltage value Vminp, a voltage value of the signal OUTPLIM 1 is equal to a voltage value of the signal OUTP 1 .
- the limiter circuit LIM 1 transmits the signal OUTP 1 as the signal OUTPLIM 1 to the intermediate voltage generator CMFB 1 .
- a voltage value of the signal OUTPLIM 1 is equal to the minimum voltage value Vminp.
- the limiter circuit LIM 1 transmits the minimum voltage value Vminp as the signal OUTPLIM 1 to the intermediate voltage generator CMFB 1 .
- the PMOS transistor P 3 has one end coupled to the output terminal Toutm 1 , the other end coupled to the intermediate voltage generator CMFB 1 , and a gate to which the voltage VLIM 1 is applied.
- the voltage VLIM 1 is smaller than, for example, the reference voltage VCMREF 1 and is a voltage that turns on the PMOS transistor P 3 .
- a minimum voltage value Vminm of the signal OUTM 1 is determined based on the voltage VLIM 1 . In the case of the signal OUTM 1 being greater than the minimum voltage value Vminm, a voltage value of the signal OUTMLIM 1 is equal to a voltage value of the signal OUTM 1 .
- the limiter circuit LIM 1 transmits the signal OUTM 1 as the signal OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- a voltage value of the signal OUTMLIM 1 is equal to the minimum voltage value Vminm.
- the limiter circuit LIM 1 transmits the minimum voltage value Vminm as the signal OUTMLIM 1 to the intermediate voltage generator CMFB 1 .
- a feedback operation of the power amplifying device 1 according to the present modification will be described.
- a flowchart showing a second feedback operation of the power amplifying device 1 according to the present modification is similar to that of FIG. 5 according to the first embodiment.
- the limiter circuit LIM 1 limits, as the second feedback operation, the minimum voltage value Vmin of the signals OUTP 1 and OUTM 1 based on the voltage VLIM 1 . Therefore, a voltage value of the signals OUTPLIM 1 and OUTMLIM 1 becomes greater than or equal to the minimum voltage value Vmin determined based on the voltage VLIM 1 .
- the reference voltage VCMREF 1 is set to be a voltage greater than the voltage VCC/2 and smaller than the voltage VCC, the signals OUTP 1 and OUTM 1 are clipped on the voltage VCC side when their amplitude increases.
- the configuration according to the present modification reduces variations in midpoint potential of the signals OUTP 1 and OUTM 1 .
- the configuration according to the present modification can suppress deterioration in distortion of the signals OUTP 1 and OUTM 1 , and OUTP 1 ⁇ OUTM 1 .
- the power amplifying device 1 according to a second embodiment will be described.
- the power amplifying device 1 according to the present embodiment differs from the first embodiment in terms of containing a BTL amplifier (hereinafter also referred to as a “high-side amplifier HS”) including a third operational amplifier A 3 and a fourth operational amplifier A 4 .
- the first embodiment is directed to a 1ch (1 channel) power amplifying device
- the second embodiment is directed to a 2ch (2 channel) power amplifying device.
- the second embodiment can operate with a higher degree of efficiency by sharing power consumed by the high-side amplifier HS with the low-side amplifier LS.
- the following description will in principle concentrate on the feature different from the first embodiment.
- FIG. 9 is a circuit diagram showing an example of the power amplifying device 1 .
- the power amplifying device 1 further includes a buffer circuit BUF, a first voltage interconnect 4 , and a first voltage terminal T 3 .
- the buffer circuit BUF generates a voltage VCC/2 as a divided voltage of a voltage between the power supply voltage interconnect 2 and the ground voltage interconnect 3 .
- the first voltage interconnect 4 is coupled to the first voltage terminal T 3 , and the voltage VCC/2 is supplied from the buffer BUF to the first voltage terminal T 3 .
- the BTL amplifier (hereinafter also referred to as a “low-side amplifier LS”) including the first operational amplifier A 1 and the second operational amplifier A 2 further includes the switches SW 1 and SW 2 .
- the switch SW 1 is coupled to the first power supply voltage terminal of the first operational amplifier A 1 , and switches the coupling between the first power supply voltage terminal of the first operational amplifier A 1 and the power supply voltage interconnect 2 and the coupling between the first power supply voltage terminal of the first operational amplifier A 1 and the first voltage interconnect 4 .
- the switch SW 2 is coupled to the first power supply voltage terminal of the second operational amplifier A 2 , and switches the coupling between the first power supply voltage terminal of the second operational amplifier A 2 and the power supply voltage interconnect 2 and the coupling between the first power supply voltage terminal of the second operational amplifier A 2 and the first voltage interconnect 4 .
- the switches SW 1 and SW 2 are coupled to the first voltage interconnect 4 .
- the voltage VCC/2 and the voltage VSS are applied to the first operational amplifier A 1 and the second operational amplifier A 2 .
- the switches SW 1 and SW 2 are coupled to the power supply voltage interconnect 2 .
- the voltage VCC and the voltage VSS are applied to the first operational amplifier A 1 and the second operational amplifier A 2 .
- the reference voltage VCMREF 1 is, for example, a voltage VCC/4.
- the high-side amplifier HS includes input terminals Tinp 2 and Tinm 2 , output terminals Toutp 2 and Toutm 2 , resistance elements Rs 3 and Rs 4 , a third operational amplifier A 3 , a fourth operational amplifier A 4 , resistance elements Rf 3 and Rf 4 , switches SW 3 and SW 4 , a limiter circuit LIM 2 , and an intermediate voltage generator CMFB 2 .
- the input terminals Tinp 2 and Tinm 2 respectively correspond to the input terminals Tinp 1 and Tinm 1 of the low-side amplifier LS.
- the output terminals Toutp 2 and Toutm 2 respectively correspond to the output terminals Toutp 1 and Toutm 1 of the low-side amplifier LS.
- the resistance elements Rs 3 and Rs 4 respectively correspond to the resistance elements Rs 1 and Rs 2 of the low-side amplifier LS.
- a TDFBp 3 terminal, a TCFBp 3 terminal, a TDFBm 3 terminal, and a TCFBm 3 terminal of the third operational amplifier A 3 respectively correspond to the TDFBp 1 terminal, the TCFBp 1 terminal, the TDFBm 1 terminal, and the TCFBm 1 terminal of the first operational amplifier A 1 of the low-side amplifier LS.
- the third operational amplifier A 3 has a similar configuration to that of the first operational amplifier A 1 .
- a TDFBp 4 terminal, a TCFBp 4 terminal, a TDFBm 4 terminal, and a TCFBm 4 terminal of the fourth operational amplifier A 4 respectively correspond to the TDFBp 2 terminal, the TCFBp 2 terminal, the TDFBm 2 terminal, and the TCFBm 2 terminal of the second operational amplifier A 2 of the low-side amplifier LS.
- the fourth operational amplifier A 4 has a similar configuration to that of the second operational amplifier A 2 .
- the resistance elements Rf 3 and Rf 4 respectively correspond to the resistance elements Rf 1 and Rf 2 of the low-side amplifier LS.
- the switch SW 3 is coupled to the second power supply voltage terminal of the third operational amplifier A 3 , and switches the coupling between the second power supply voltage terminal of the third operational amplifier A 3 and the ground voltage interconnect 3 and the coupling between the second power supply voltage terminal of the third operational amplifier A 3 and the first voltage interconnect 4 .
- the switch SW 3 corresponds to the switch SW 1 of the low-side amplifier LS.
- the switch SW 4 is coupled to the second power supply voltage terminal of the fourth operational amplifier A 4 , and switches the coupling between the second power supply voltage terminal of the fourth operational amplifier A 4 and the ground voltage interconnect 3 and the coupling between the second power supply voltage terminal of the fourth operational amplifier A 4 and the first voltage interconnect 4 .
- the switch SW 4 corresponds to the switch SW 2 of the low-side amplifier LS.
- the switches SW 3 and SW 4 are coupled to the first voltage interconnect 4 .
- the voltage VCC and the voltage VCC/2 are applied to the third operational amplifier A 3 and the fourth operational amplifier A 4 .
- the switches SW 3 and SW 4 are coupled to the ground voltage interconnect 3 .
- the voltage VCC and the voltage VSS are applied to the third operational amplifier A 3 and the fourth operational amplifier A 4 .
- the limiter circuit LIM 2 corresponds to the limiter circuit LIM 1 of the low-side amplifier LS.
- the limiter circuit LIM 2 has a configuration similar to that of the limiter circuit LIM 1 according to the second modification of the first embodiment.
- the intermediate voltage generator CMFB 2 corresponds to the intermediate voltage generator CMFB 1 of the low-side amplifier LS.
- the intermediate voltage generator CMFB 2 has a configuration similar to that of the intermediate voltage generator CMFB 1 .
- the signals INP 2 and INM 2 respectively correspond to the signals INP 1 and INM 1 of the low-side amplifier LS.
- the nodes ND 11 and ND 12 respectively correspond to the nodes ND 1 and ND 2 of the low-side amplifier LS.
- the voltages Vinp 2 and Vinm 2 respectively correspond to the voltages Vinp 1 and Vinm 1 of the low-side amplifier LS.
- the reference voltage VCMREF 2 and the feedback voltage VCMFB 2 respectively correspond to the reference voltage VCMREF 1 and the feedback voltage VCMFB 1 of the low-side amplifier LS.
- the reference voltage VCMREF 2 is, for example, a voltage 3VCC/4.
- the nodes ND 13 and ND 14 respectively correspond to the nodes ND 3 and ND 4 of the low-side amplifier LS.
- the signals OUTP 2 and OUTM 2 respectively correspond to the signals OUTP 1 and OUTM 1 of the low-side amplifier LS.
- the voltage VLIM 2 and the signals OUTPLIM 2 and OUTMLIM 2 respectively correspond to the voltage VLIM 1 of the low-side amplifier LS and the signals OUTPLIM 1 and OUTMLIM 1 .
- a feedback operation of the power amplifying device 1 according to the present embodiment will be described.
- a flowchart showing a second feedback operation in the low-side amplifier LS and the high-side amplifier HS of the power amplifying device 1 according to the present embodiment is similar to that of FIG. 5 according to the first embodiment.
- the present embodiment has advantageous effects similar to those described in the first embodiment.
- the present embodiment reduces variations in midpoint potential of the signals OUTP 1 and OUTM 1 and variations in midpoint potential of the signals OUTP 2 and OUTM 2 .
- the power amplifying device including two or more power amplifying devices according to the second embodiment even if output terminals of the low-side amplifiers LS are coupled to each other by mistake and output terminals of the high-amplifiers HS are coupled to each other by mistake, a potential difference between the output terminals coupled together by mistake is small because variations in midpoint potential are small. This decreases a value of a flowing short-circuit current. Accordingly, a circuit for protecting a short-circuit with another channel is not necessarily provided.
- the present embodiment is applicable to the first modification of the first embodiment.
- a power amplifying device ( 1 ) includes a first amplifier (A 1 ) including a plurality of input terminals to which a plurality of voltages are applied, respectively, the first amplifier (A 1 ) being configured to output a first output signal (OUTP 1 ), a second amplifier (A 2 ) including a plurality of input terminals to which a plurality of voltages are applied, respectively, the second amplifier (A 2 ) being configured to output a second output signal (OUTM 1 ), a first circuit (LIM 1 ) configured to output a third signal (OUTPLIM 1 ) obtained by limiting a magnitude of a voltage value of the first output signal (OUTP 1 ) and a fourth signal (OUTMLIM 1 ) obtained by limiting a magnitude of a voltage value of the second output signal (OUTM 1 ), and a second circuit (CMFB 1 ) configured to transmit an average value of a voltage value of the third signal (OUTPLIM 1 ) and a voltage value of the fourth
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Abstract
Description
Claims (14)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021154124A JP7657687B2 (en) | 2021-09-22 | 2021-09-22 | Power Amplifier |
| JP2021-154124 | 2021-09-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20230091797A1 US20230091797A1 (en) | 2023-03-23 |
| US12267052B2 true US12267052B2 (en) | 2025-04-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US17/653,543 Active 2043-11-03 US12267052B2 (en) | 2021-09-22 | 2022-03-04 | Power amplifying device |
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| Country | Link |
|---|---|
| US (1) | US12267052B2 (en) |
| JP (1) | JP7657687B2 (en) |
| CN (1) | CN115940848B (en) |
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| JPH0567932A (en) * | 1990-12-27 | 1993-03-19 | Pioneer Electron Corp | Amplifier |
| JP4297748B2 (en) * | 2003-08-21 | 2009-07-15 | 日置電機株式会社 | Limiter circuit |
| JP4738090B2 (en) * | 2005-08-05 | 2011-08-03 | 株式会社東芝 | BTL type amplifier circuit |
| JP5498998B2 (en) * | 2011-08-12 | 2014-05-21 | 株式会社東芝 | Power amplifier circuit |
| JP2014045360A (en) * | 2012-08-27 | 2014-03-13 | Sony Corp | Limiter circuit and television receiver |
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- 2021-09-22 JP JP2021154124A patent/JP7657687B2/en active Active
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- 2022-01-18 CN CN202210053341.XA patent/CN115940848B/en active Active
- 2022-03-04 US US17/653,543 patent/US12267052B2/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| US20230091797A1 (en) | 2023-03-23 |
| JP2023045602A (en) | 2023-04-03 |
| JP7657687B2 (en) | 2025-04-07 |
| CN115940848A (en) | 2023-04-07 |
| CN115940848B (en) | 2026-01-16 |
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