US11435257B2 - System and method for monitoring vacuum valve closing condition in vacuum processing system - Google Patents
System and method for monitoring vacuum valve closing condition in vacuum processing system Download PDFInfo
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- US11435257B2 US11435257B2 US16/521,989 US201916521989A US11435257B2 US 11435257 B2 US11435257 B2 US 11435257B2 US 201916521989 A US201916521989 A US 201916521989A US 11435257 B2 US11435257 B2 US 11435257B2
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- pressure
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- ring
- vacuum
- sealing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/26—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors
- G01M3/28—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors for pipes, cables or tubes; for pipe joints or seals; for valves ; for welds
- G01M3/2876—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors for pipes, cables or tubes; for pipe joints or seals; for valves ; for welds for valves
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K37/00—Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
- F16K37/0025—Electrical or magnetic means
- F16K37/0041—Electrical or magnetic means for measuring valve parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K37/00—Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
- F16K37/0075—For recording or indicating the functioning of a valve in combination with test equipment
- F16K37/0083—For recording or indicating the functioning of a valve in combination with test equipment by measuring valve parameters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M13/00—Testing of machine parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M13/00—Testing of machine parts
- G01M13/003—Machine valves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M13/00—Testing of machine parts
- G01M13/005—Sealing rings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
-
- H01L21/67017—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
Definitions
- a feature e.g., a gate/drain/source feature of a transistor, a horizontal interconnect line, or a vertical via, etc.
- the wafer typically goes through a production line which comprises multiple processing stations typically using different process tools to perform various operations such as cleaning, photolithography, dielectric deposition, dry/wet etching, and metal deposition, for example.
- a “killer defect” caused by particles can occur on a semiconductor surface in one or more aforementioned malfunctioning processing stations along the production line.
- particles can be introduced to a vacuum processing chamber from one or more vacuum valves due to its misalignment with a mating surface on a vacuum chamber (e.g., leakage, friction, etc.).
- inspection of vacuum valves is manually performed by a human to determine their closing condition (e.g., alignment and pressure). Such manual inspection of vacuum valves has a poor resolution. Further, such a “manual” inspection often interrupts an automatic production line, which also increases the possibility of wafer contamination.
- FIG. 1 illustrates a cross-sectional overview of a vacuum processing system, in accordance with some embodiments of the present disclosure.
- FIG. 2A illustrates a cross-sectional view of a pressure monitoring tape for monitoring a closing condition of a vacuum valve with an o-ring on a bottom surface for sealing with a mating surface on a vacuum processing chamber, in accordance with some embodiments of the present disclosure.
- FIG. 2B illustrates a cross-sectional view of a pressure monitoring tape for monitoring a closing condition of a vacuum valve with an o-ring on a side surface for sealing with a mating surface on a vacuum processing chamber, in accordance with some embodiments of the present disclosure.
- FIG. 3 illustrates a cross-sectional view of a monitoring system for monitoring the closing condition of a vacuum valve in a vacuum processing system, in accordance with some embodiments of the present disclosure.
- FIG. 4 illustrates a flowchart of a method to use a pressure monitoring sensing tape in a vacuum processing system to monitor the closing condition of a vacuum valve in a vacuum processing chamber, in accordance with some embodiments of the present disclosure.
- the presented disclosure provides various embodiments of a method and system for monitoring a closing condition of a vacuum valve in a vacuum processing system.
- a vacuum valve widely used in vacuum processes needs to be inspected to prevent potential particle contamination caused by friction or leakage caused by a misalignment between the valve and the mating surface as part of a chamber wall.
- a valve and its alignment to the mating surface are inspected by a manual inspection.
- Such manual inspection of vacuum valves typically has a poor resolution. Further, such a “manual” inspection often interrupts an automatic production line, which also increases the possibility of wafer contamination.
- a system and method to automatically detect the alignment of a vacuum valve and its mating surface can provide critical insights into a wide variety of process characteristics (e.g., tools and conditions) without significantly interrupting the production line or affecting its throughput has been desired by the IC industry is presented. Accordingly, the above-mentioned issues may be advantageously avoided.
- FIG. 1 illustrates a cross-sectional overview of a vacuum processing system 100 , in accordance with some embodiments of the present disclosure.
- the vacuum processing system 100 comprises a vacuum processing chamber 102 which can be a physical vapor deposition (PVD) chamber or a chemical vapor deposition (CVD) chamber, according to some embodiments.
- the physical vapor deposition chamber can be used in a DC magnetron sputtering system, a plasma enhanced sputtering system, etc.
- the vacuum processing chamber 102 can be an atomic layer deposition (ALD) chamber.
- the vacuum processing chamber 102 can be used for dry etching processes, e.g., deep reactive ion etching (DRIE).
- DRIE deep reactive ion etching
- the vacuum processing chamber 102 can be connected to a load lock chamber (not shown) and further to the ambient environment or to another vacuum processing chamber (not shown).
- the vacuum processing chamber 102 comprises at least one transfer port 104 with a corresponding vacuum valve 106 , at least one vacuum port 108 connected to a pressure control unit 110 (e.g., vacuum pump).
- the vacuum processing chamber 102 can comprise at least one gas-feeding port, a temperature control unit, a power control unit, a matching circuit depending on the application and system.
- the gas through the gas-feeding port to the processing chamber 102 may include at least one or a combination of O 2 , Ar, N 2 , H 2 , NH 3 , N 2 O, CF 4 , SF 6 , CCl 4 , CH 4 , H 2 S, SiH 4 , metal-containing precursors, etc.
- the vacuum processing chamber 102 may be also equipped with a plurality of pressure gauges, thickness monitor systems (quartz crystal monitor, spectroscopic ellipsometer, reflection high-energy electron diffraction detector (RHEED)), shutters, a rotational manipulator, viewports, transfer ports, etc.
- the vacuum processing system 100 can be used in processing the surface layers of a semiconductor wafer 112 .
- any of a photoresist layer, mask layer, or other layer of a semiconductor wafer as desired can be processed before or after an etch step, or any combination thereof, according to a specified recipe.
- the recipe also specifies parameters used to establish the proper environment in the vacuum processing chamber 102 for realizing the desired features and feature dimensions on the semiconductor wafer 112 .
- the recipe can specify a type of reactant gas to be introduced into the vacuum processing chamber 102 and its flow rate, a pressure during reaction, a temperature and a power.
- the semiconductor wafer 112 that can be transferred through the transfer port 104 to the vacuum processing chamber 102 for desired processes.
- the vacuum valve 106 comprises a mechanism to provide an opening and a closing motion to the vacuum valve.
- the vacuum processing system 100 further comprises a wafer transfer mechanism 114 for loading the semiconductor wafer 112 to and unloading the semiconductor wafer 112 from a wafer stage 116 in the vacuum processing chamber 102 .
- the semiconductor wafer 112 may be a bulk silicon substrate although other semiconductor materials including group III, group IV, and group V elements may also be used. Alternatively, the semiconductor wafer 112 may be a silicon-on-insulator (SOI) substrate.
- SOI silicon-on-insulator
- a device layer may be a polysilicon layer (not shown) disposed on the semiconductor wafer for the formation of one or more polysilicon gates in the wafer.
- the device layer may be a metallization layer such as an inter-layer dielectric (ILD) or an inter-metal dielectric layer (IMD) for forming interconnect structures (e.g., metal lines and/or vias).
- the device layer may be any layer in the semiconductor wafer 112 that may be patterned using photolithography and etching processes.
- the wafer may include numerous device layers.
- the device layer may include a buffer layer (e.g., an oxide interfacial layer, not shown), an etch stop layer (e.g., a silicon nitride layer, a silicon carbide layer, or the like), or the like.
- a hard mask may be formed over the device layer for use as a patterning mask.
- the hard mask may comprise an oxide, silicon oxynitride (SiON), silicon nitride (Si 3 N 4 ), titanium nitride (TiN), or the like.
- FIG. 2A illustrates a cross-sectional view 200 of a pressure monitoring tape 208 for monitoring a closing condition of a vacuum valve 106 with an o-ring 204 on a bottom surface for sealing with a mating surface 206 on a vacuum processing chamber 102 , in accordance with some embodiments of the present disclosure.
- the vacuum valve 106 is a transfer valve, a transfer door, a gate valve, a pendulum valve, etc. with a single-axis or a multi-axis closing mechanism.
- the axis 201 along which the vacuum valve 106 closes is perpendicular to the transfer port 104 .
- the transfer port 104 for transferring semiconductor wafers 112 can be in different shapes, for example, rectangular triangular, and hexagonal according to the process configurations.
- the vacuum valve 106 can be made of stainless steel.
- the vacuum valve 106 can be made of aluminum for magnetic sensitive processes.
- an o-ring 204 can be made of elastomers with different hardness. In some embodiments, the hardness of the o-ring 204 is selected so that the o-ring 204 can adapt to the unevenness of the mating surfaces 206 to ensure a seamless contact. The surface of the o-ring 204 is free of releasing grease, smooth and crack/scratch-free.
- the o-ring 204 is coated with a thin film of a low vapor pressure grease (e.g., silicon grease, mineral oil based or perfluoropolyether-based grease), which is used to smooth out small irregularities on the surface of the o-ring 204 and the pressure sensing tape 208 on the mating surface 206 .
- a low vapor pressure grease e.g., silicon grease, mineral oil based or perfluoropolyether-based grease
- the cord diameter of the o-ring 204 is in a range of 2-12 millimeter (mm), which is selected to ensure that the o-ring 204 provides a proper sealing effect and is not excessively compressed.
- the o-ring 204 is placed in axial or a radial grooves 202 depending on the closing motion of the valve relative to the mating surface.
- the o-ring groove 202 is larger than the diameter of the o-ring 204 to ensure a secured assembly.
- a plurality of o-rings 204 in o-ring grooves 202 can be configured on the vacuum valve 106 .
- the o-ring 204 is aligned with the pressure monitoring tape 208 so that the pressure monitoring tape 208 can measure the pressure between the o-ring 104 and the mating surface 206 to evaluate the alignment and the pressure of the vacuum valve 106 .
- the pressure monitoring tape 208 comprises a plurality of sensing elements configured as an array.
- each of the plurality of sensing elements comprises thin film sensors with a thickness of 10 microns to several hundreds of microns.
- the back of the pressure monitoring tape 208 comprises adhesives that allow a facile integration to the mating surface 206 on the vacuum processing chamber 102 .
- the adhesive is vacuum grade and has low vapor pressure to avoid degassing into the vacuum system.
- the pressure monitoring tape 208 is flexible.
- the sensing element 308 in the pressure monitoring tape 208 can detect the contact and measure the surface contact pressure between the surface of the o-ring 204 and the mating surface 206 once properly calibrated.
- the sensing element is a tactile force sensor which can be based on different technologies and materials, for example, capacitive, piezoresistive, which will be discussed further in detail below in FIG. 4 .
- FIG. 2B illustrates a cross-sectional view 210 of a pressure monitoring tape 208 for monitoring a closing condition of a vacuum valve 106 with an o-ring 204 on a side surface for sealing with a mating surface 206 on a vacuum processing chamber 102 , in accordance with some embodiments of the present disclosure.
- the closing motion of the vacuum valve 106 e.g., single axis gate valve or a pendulum valve
- the o-ring 204 in the o-ring groove 202 can be on the edge surface of the vacuum valve 106 to make a proper seal with the mating surface 206 .
- the pressure monitoring tape 208 is configured on the mating surface 206 according to the position of the o-ring 204 . In the illustrated embodiment, the pressure monitoring tape 208 is placed on the inner surface of a flange attached to the transfer port 104 .
- FIG. 3 illustrates a cross-sectional view of a monitoring system 300 for monitoring the closing condition of a vacuum valve 106 in a vacuum processing system 100 , in accordance with some embodiments of the present disclosure.
- the pressure monitoring system 300 comprises a pressure monitoring tape 208 on a mating surface 206 , a data acquisition unit 310 , a data processing unit 312 , a local computer 314 and a deposition control unit 316 , according to the illustrated embodiment.
- the pressure monitoring tape 208 comprises an array of sensing elements 304 .
- the sensing element 304 is a tactile sensor based on various technologies.
- the sensing element 304 can be a capacitive tactile sensor with two parallel plates, in which the applied force can change the charge stored in the capacitor by changing the distance between the two parallel plates.
- the sensing element 304 can be a piezoelectric tactile sensor, in which an electrical potential is formed according to the applied stress or strain.
- the sensing element 304 can be a piezoresistive tactile sensor, in which the resistivity change according to the applied stress or strain.
- the sensing element 304 can be fabricated using a CMOS (complementary metal-oxide-semiconductor) technology on semiconductors. Although three are 3 sensing elements in one row shown in the illustrated embodiment, it should be noted that any number of sensing elements in a row and any number of columns/rows in an array can be used and are within the scope of this disclosure.
- the array of sensing elements is configured according to the size/number of the sensing elements 304 and requirement of the spatial resolution.
- the array of sensing element 304 in the pressure monitoring tape 208 can be coated with a protective coating 302 . Proper calibration is required to compensate a constant drift of change of properties (e.g., capacitance, resistance, etc.) under a constant pressure for a prolonged duration of time.
- the sensing element 304 is a flexible film pressure sensor or an electronic skin.
- the sensing element is protected by a flexible thin film or a Teflon coating.
- the array of sensing element 304 is then connected to a data acquisition unit 310 , according to some embodiments.
- the data acquisition unit 310 comprises a scanning circuit, an address generator, a decoder, etc., which allows a readout from each sensing element 304 in the array.
- the scan speed across the entire array can be a few tens of kilohertz and can be configured by users according to the number of sensing elements and their response time.
- the data acquisition unit 310 is further connected to a data processing unit 312 and a local computer 314 , where the measurement data can be processed by an analog-to-digital (A/D) converter, displayed and stored on a local computer.
- A/D analog-to-digital
- the data can be displayed in real-time on the screen of the local computer 314 to monitor the closing process of the vacuum chamber, the status of the vacuum valve 106 , the contacting area between surfaces in order to convert measured force to pressure. Furthermore, the system presented here can also provide opportunities to monitor the lifetime of the o-ring 204 for early detection of failure in o-ring 204 to prevent leakage or contamination to the vacuum processing system 100 .
- the local computer 314 can be further configured to obtain an average pressure value, a maximum pressure value, a minimum pressure value and a deviation of pressure values. In some embodiments, these values can be compared to predefined or user-preconfigured threshold values in order to determine whether a process in the vacuum processing chamber 102 can be performed. If a value is within a predefined or user-preconfigured threshold value, the local computer 314 can further instruct the vacuum processing control unit 316 to perform the vacuum processing. If a value is out of a predefined or user-preconfigures threshold value, the local computer 314 can further alarm the operator and trigger a preconfigured maintenance procedure.
- the control unit 316 is a representative device and may comprise a processor, a memory, an input/output interface, a communications interface, and a system bus.
- the processor may comprise any processing circuitry operative to control the operations and performance of the control unit 316 of the system 100 .
- the processor may be implemented as a general purpose processor, a chip multiprocessor (CMP), a dedicated processor, an embedded processor, a digital signal processor (DSP), a network processor, an input/output (I/O) processor, a media access control (MAC) processor, a radio baseband processor, a co-processor, a microprocessor such as a complex instruction set computer (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, and/or a very long instruction word (VLIW) microprocessor, or other processing device.
- the processor also may be implemented by a controller, a microcontroller, an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a programmable logic device (PLD), and so forth.
- the processor may be arranged to run an operating system (OS) and various applications.
- OS operating system
- applications comprise, for example, a telephone application, a camera (e.g., digital camera, video camera) application, a browser application, a multimedia player application, a gaming application, a messaging application (e.g., email, short message, multimedia), a viewer application, and so forth.
- At least one non-transitory computer-readable storage medium having computer-executable instructions embodied thereon, wherein, when executed by at least one processor, the computer-executable instructions cause the at least one processor to perform embodiments of the methods described herein.
- This computer-readable storage medium can be embodied in the memory.
- the memory may comprise any machine-readable or computer-readable media capable of storing data, including both volatile/non-volatile memory and removable/non-removable memory.
- the memory may comprise at least one non-volatile memory unit.
- the non-volatile memory unit is capable of storing one or more software programs.
- the software programs may contain, for example, applications, user data, device data, and/or configuration data, or combinations therefore, to name only a few.
- the software programs may contain instructions executable by the various components of the control circuits 112 of the system 100 .
- memory may comprise read-only memory (ROM), random-access memory (RAM), dynamic RAM (DRAM), Double-Data-Rate DRAM (DDR-RAM), synchronous DRAM (SDRAM), static RAM (SRAM), programmable ROM (PROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), flash memory (e.g., NOR or NAND flash memory), content addressable memory (CAM), polymer memory (e.g., ferroelectric polymer memory), phase-change memory (e.g., ovonic memory), ferroelectric memory, silicon-oxide-nitride-oxide-silicon (SONOS) memory, disk memory (e.g., floppy disk, hard drive, optical disk, magnetic disk), or card (e.g., magnetic card, optical card), or any other type of media suitable for storing information.
- ROM read-only memory
- RAM random-access memory
- DRAM dynamic RAM
- DDR-RAM Double-Data-Rate DRAM
- the memory may contain an instruction set, in the form of a file for executing a method of generating one or more timing libraries as described herein.
- the instruction set may be stored in any acceptable form of machine-readable instructions, including source code or various appropriate programming languages.
- Some examples of programming languages that may be used to store the instruction set comprise, but are not limited to: Java, C, C++, C#, Python, Objective-C, Visual Basic, or .NET programming.
- a compiler or interpreter is comprised to convert the instruction set into machine executable code for execution by the processor.
- the I/O interface may comprise any suitable mechanism or component to at least enable a user to provide input to the control unit 316 of the system 300 and the control unit 316 to provide output to the user.
- the I/O interface may comprise any suitable input mechanism, including but not limited to, a button, keypad, keyboard, click wheel, touch screen, or motion sensor.
- the I/O interface may comprise a capacitive sensing mechanism, or a multi-touch capacitive sensing mechanism (e.g., a touchscreen).
- the I/O interface may comprise a visual peripheral output device for providing a display visible to the user.
- the visual peripheral output device may comprise a screen such as, for example, a Liquid Crystal Display (LCD) screen, incorporated into the control unit 316 of the system 300 .
- the visual peripheral output device may comprise a movable display or projecting system for providing a display of content on a surface remote from the control unit 316 of the vacuum processing system 100 .
- the visual peripheral output device can comprise a coder/decoder, also known as a Codec, to convert digital media data into analog signals.
- the visual peripheral output device may comprise video Codecs, audio Codecs, or any other suitable type of Codec.
- the visual peripheral output device also may comprise display drivers, circuitry for driving display drivers, or both.
- the visual peripheral output device may be operative to display content under the direction of the processor.
- the visual peripheral output device may be able to play media playback information, application screens for applications implemented on the control unit 316 of the system 300 , information regarding ongoing communications operations, information regarding incoming communications requests, or device operation screens, to name only a few.
- the communications interface may comprise any suitable hardware, software, or combination of hardware and software that is capable of coupling the control unit 316 of the system 300 to one or more networks and/or additional devices.
- the communications interface may be arranged to operate with any suitable technique for controlling information signals using a desired set of communications protocols, services or operating procedures.
- the communications interface may comprise the appropriate physical connectors to connect with a corresponding communications medium, whether wired or wireless.
- the network may comprise local area networks (LAN) as well as wide area networks (WAN) including without limitation Internet, wired channels, wireless channels, communication devices including telephones, computers, wire, radio, optical or other electromagnetic channels, and combinations thereof, including other devices and/or components capable of/associated with communicating data.
- LAN local area networks
- WAN wide area networks
- the communication environments comprise in-body communications, various devices, and various modes of communications such as wireless communications, wired communications, and combinations of the same.
- Wireless communication modes comprise any mode of communication between points (e.g., nodes) that utilize, at least in part, wireless technology including various protocols and combinations of protocols associated with wireless transmission, data, and devices.
- the points comprise, for example, wireless devices such as wireless headsets, audio and multimedia devices and equipment, such as audio players and multimedia players, telephones, including mobile telephones and cordless telephones, and computers and computer-related devices and components, such as printers, network-connected machinery, and/or any other suitable device or third-party device.
- Wired communication modes comprise any mode of communication between points that utilize wired technology including various protocols and combinations of protocols associated with wired transmission, data, and devices.
- the points comprise, for example, devices such as audio and multimedia devices and equipment, such as audio players and multimedia players, telephones, including mobile telephones and cordless telephones, and computers and computer-related devices and components, such as printers, network-connected machinery, and/or any other suitable device or third-party device.
- the wired communication modules may communicate in accordance with a number of wired protocols.
- wired protocols may comprise Universal Serial Bus (USB) communication, RS-232, RS-422, RS-423, RS-485 serial protocols, FireWire, Ethernet, Fiber Channel, MIDI, ATA, Serial ATA, PCI Express, T-1 (and variants), Industry Standard Architecture (ISA) parallel communication, Small Computer System Interface (SCSI) communication, or Peripheral Component Interconnect (PCI) communication, to name only a few examples.
- USB Universal Serial Bus
- RS-422 RS-422
- RS-423 RS-485 serial protocols
- FireWire FireWire
- Ethernet Fiber Channel
- MIDI MIDI
- ATA Serial ATA
- PCI Express PCI Express
- T-1 and variants
- ISA Industry Standard Architecture
- SCSI Small Computer System Interface
- PCI Peripheral Component Interconnect
- the communications interface may comprise one or more interfaces such as, for example, a wireless communications interface, a wired communications interface, a network interface, a transmit interface, a receive interface, a media interface, a system interface, a component interface, a switching interface, a chip interface, a controller, and so forth.
- the communications interface may comprise a wireless interface comprising one or more antennas, transmitters, receivers, transceivers, amplifiers, filters, control logic, and so forth.
- the communications interface may provide voice and/or data communications functionality in accordance a number of wireless protocols.
- wireless protocols may comprise various wireless local area network (WLAN) protocols, including the Institute of Electrical and Electronics Engineers (IEEE) 802.xx series of protocols, such as IEEE 802.11a/b/g/n, IEEE 802.16, IEEE 802.20, and so forth.
- WLAN wireless local area network
- IEEE Institute of Electrical and Electronics Engineers
- Other examples of wireless protocols may comprise various wireless wide area network (WWAN) protocols, such as GSM cellular radiotelephone system protocols with GPRS, CDMA cellular radiotelephone communication systems with 1 ⁇ RTT, EDGE systems, EV-DO systems, EV-DV systems, HSDPA systems, and so forth.
- WWAN wireless wide area network
- wireless protocols may comprise wireless personal area network (PAN) protocols, such as an Infrared protocol, a protocol from the Bluetooth Special Interest Group (SIG) series of protocols, including Bluetooth Specification versions v1.0, v1.1, v1.2, v2.0, v2.0 with Enhanced Data Rate (EDR), as well as one or more Bluetooth Profiles, and so forth.
- PAN personal area network
- SIG Bluetooth Special Interest Group
- wireless protocols may comprise near-field communication techniques and protocols, such as electromagnetic induction (EMI) techniques.
- EMI techniques may comprise passive or active radio-frequency identification (RFID) protocols and devices.
- RFID radio-frequency identification
- Other suitable protocols may comprise Ultra Wide Band (UWB), Digital Office (DO), Digital Home, Trusted Platform Module (TPM), ZigBee, and so forth.
- control unit 316 of the system 300 may comprise a system bus that couples various system components including the processor, the memory, and the I/O interface.
- the system bus can be any of several types of bus structure(s) including a memory bus or memory controller, a peripheral bus or external bus, and/or a local bus using any variety of available bus architectures including, but not limited to, 9-bit bus, Industrial Standard Architecture (ISA), Micro-Channel Architecture (MCA), Extended ISA (EISA), Intelligent Drive Electronics (IDE), VESA Local Bus (VLB), Personal Computer Memory Card International Association (PCMCIA) Bus, Small Computer System Interface (SCSI) or other proprietary bus, or any custom bus suitable for computing device applications.
- ISA Industrial Standard Architecture
- MCA Micro-Channel Architecture
- EISA Extended ISA
- IDE Intelligent Drive Electronics
- VLB VESA Local Bus
- PCMCIA Personal Computer Memory Card International Association
- SCSI Small Computer System Interface
- FIG. 4 illustrates a flowchart of a method 400 to use a pressure monitoring sensing tape 208 in a vacuum processing system 100 to monitor the closing condition of a vacuum valve 106 in a vacuum processing chamber 102 , in accordance with some embodiments of the present disclosure. It is understood that additional operations may be provided before, during, and after the method 400 of FIG. 4 , and that some other operations may be omitted or only briefly described herein.
- the method 400 starts with operation 402 in which a vacuum processing chamber 102 is prepared for a vacuum process, according to some embodiments.
- This preparation includes, but not limited to, cleaning the vacuum processing chamber 102 using in-situ dry etching, configuring a pressure in the vacuum processing chamber 102 using a pressure control unit 110 , configuring a temperature on a stage 116 , configuring an environment in the vacuum processing chamber 102 by providing at least one gas to the vacuum processing chamber 102 , and configuring a reaction recipe using a reaction control unit 316 , in accordance with some embodiments.
- the method 400 continues with operation 404 , in which the vacuum processing chamber 102 receives a semiconductor wafer 112 through a transfer port 104 for processing, according to some embodiments.
- a vacuum valve 106 is open so that a wafer transfer mechanism 114 delivers the semiconductor wafer 112 from a load lock chamber or another processing chamber to the vacuum processing chamber 102 .
- the semiconductor wafer 112 is delivered to and secured on the wafer stage 116 .
- the wafer transfer mechanism 114 retracts from the vacuum processing chamber 102 and the vacuum valve 106 closes to make a seal with a mating surface 206 on the vacuum processing chamber 102 through a pressure monitoring tape 208 , in some embodiments.
- the method 400 continues with operation 406 , in which a pressure profile mapping is performed using a pressure monitoring tape 208 , according to some embodiments.
- the pressure monitoring tape 208 comprises a plurality of sensing elements 304 .
- the pressure profile between a surface of an o-ring 204 and a top surface of the pressure monitoring tap is measured.
- a stress or a strain applied on the sensing elements creates a measurable electrical signal that can be collected by a data acquisition unit 310 .
- a pressure value from each of the sensing elements 304 can be obtained from the electrical signal with proper calibration, e.g., contact area, by a data processing unit 312 to create a pressure profile mapping, in some embodiments.
- a 2-dimensional or a 3-dimensional pressure profile, i.e., pressure value versus position can be then displayed on a screen attached to a local computer 314 .
- the method 400 continues with operation 408 , in which pressure data is compared to a predefined or user-preconfigured threshold values to determine the closing status of the vacuum valve 106 , according to some embodiments.
- the local computer 314 is further configured to analyze the pressure profile mapping to obtain values such as an average pressure value, a maximum pressure value, a minimum pressure value, a standard deviation value, etc. These values are then compared to predetermined threshold values to determine the alignment between the vacuum valve 106 and the mating surface 206 and the closing condition of the vacuum valve 106 . If the measured values are within the predetermined threshold values, the local computer 314 instructs the reaction control unit to continue with operation 410 in which the vacuum processing is performed on the semiconductor wafer 112 .
- the method continues with operation 412 in which the local computer 314 triggers a maintenance procedure using the reaction control unit 316 , for example examining the closing mechanism on the vacuum valve 106 , cleaning or replacing the o-ring 204 , etc.
- the pressure profile mapping is measured again through operation 406 and the vacuum processing is further performed on the semiconductor wafer 112 when the measured values are within the predetermined threshold values, in some embodiments.
- a vacuum valve closing condition monitoring system comprising: a vacuum valve comprising at least one sealing O-ring; and a pressure monitoring tape on a mating surface on a vacuum processing chamber, wherein the pressure monitoring tape is configured to perform a pressure profile mapping between the mating surface on the vacuum processing chamber and a surface of the at least one sealing O-ring on the vacuum valve to determine a closing condition of the vacuum valve.
- a vacuum valve closing condition monitoring method comprising: closing a vacuum valve on a vacuum processing chamber, wherein the vacuum valve comprises at least one sealing O-ring; and determining a closing condition of the vacuum valve using a pressure monitoring tape, wherein the pressure monitoring tape is configured on a mating surface on the vacuum processing chamber to perform the pressure profile mapping between the mating surface on the vacuum processing chamber and a surface of the at least one sealing O-ring on the vacuum valve.
- a vacuum valve closing condition monitoring system comprising: a vacuum valve comprising at least one sealing O-ring; a pressure monitoring tape configured between a mating surface on a vacuum processing chamber and a surface of the at least one sealing O-ring on the vacuum valve; a data acquisition unit configured to collect a plurality of signals from a plurality of pressure sensing elements on the pressure monitoring tape, respectively; a data processing unit configured to process the plurality of signals from the plurality of pressure sensing elements to determine a plurality of pressure values, respectively; and a local computer configured to determine the closing condition of the vacuum valve based on the plurality of pressure values.
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Indication Of The Valve Opening Or Closing Status (AREA)
Abstract
Description
Claims (20)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/521,989 US11435257B2 (en) | 2018-07-27 | 2019-07-25 | System and method for monitoring vacuum valve closing condition in vacuum processing system |
| CN201910691330.2A CN110778783B (en) | 2018-07-27 | 2019-07-29 | Vacuum valve monitoring system and method |
| TW108126792A TWI716047B (en) | 2018-07-27 | 2019-07-29 | Vacuum valve monitoring system and method |
| US17/881,307 US12111233B2 (en) | 2018-07-27 | 2022-08-04 | System and method for monitoring vacuum valve closing condition in vacuum processing system |
| US18/770,570 US20240361203A1 (en) | 2018-07-27 | 2024-07-11 | System and method for monitoring vacuum valve closing condition in vacuum processing system |
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| US201862711398P | 2018-07-27 | 2018-07-27 | |
| US16/521,989 US11435257B2 (en) | 2018-07-27 | 2019-07-25 | System and method for monitoring vacuum valve closing condition in vacuum processing system |
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| US17/881,307 Continuation US12111233B2 (en) | 2018-07-27 | 2022-08-04 | System and method for monitoring vacuum valve closing condition in vacuum processing system |
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| US18/770,570 Pending US20240361203A1 (en) | 2018-07-27 | 2024-07-11 | System and method for monitoring vacuum valve closing condition in vacuum processing system |
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| US18/770,570 Pending US20240361203A1 (en) | 2018-07-27 | 2024-07-11 | System and method for monitoring vacuum valve closing condition in vacuum processing system |
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| CN111811755B (en) * | 2020-07-02 | 2024-12-27 | 甘肃酒钢集团宏兴钢铁股份有限公司 | A device and method for calibrating and setting the gas lock valve in three-break self-locking protection |
| KR102441993B1 (en) * | 2021-12-23 | 2022-09-08 | 주식회사 에이치피에스피 | Double O-ring Structure High Pressure Chamber Gas Leak Detection System |
| US20250379067A1 (en) * | 2024-06-06 | 2025-12-11 | Applied Materials, Inc. | Sealing structures for processing chambers |
| CN120927225B (en) * | 2025-08-22 | 2026-03-20 | 河南泉舜流体控制科技有限公司 | Eccentric butterfly valve performance detection method and system based on optical detection |
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Also Published As
| Publication number | Publication date |
|---|---|
| US12111233B2 (en) | 2024-10-08 |
| TWI716047B (en) | 2021-01-11 |
| CN110778783B (en) | 2022-04-05 |
| TW202020417A (en) | 2020-06-01 |
| US20220373426A1 (en) | 2022-11-24 |
| CN110778783A (en) | 2020-02-11 |
| US20200033225A1 (en) | 2020-01-30 |
| US20240361203A1 (en) | 2024-10-31 |
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