US11069732B2 - Semiconductor device and method for manufacturing semiconductor device - Google Patents
Semiconductor device and method for manufacturing semiconductor device Download PDFInfo
- Publication number
- US11069732B2 US11069732B2 US15/413,711 US201715413711A US11069732B2 US 11069732 B2 US11069732 B2 US 11069732B2 US 201715413711 A US201715413711 A US 201715413711A US 11069732 B2 US11069732 B2 US 11069732B2
- Authority
- US
- United States
- Prior art keywords
- plane
- hollow part
- semiconductor layer
- semiconductor device
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 211
- 238000000034 method Methods 0.000 title description 10
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000011343 solid material Substances 0.000 claims abstract description 77
- 239000012212 insulator Substances 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 148
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
Definitions
- a second aspect of the present disclosure provides a semiconductor device including a semiconductor layer that has a front surface on which a transistor is provided and a back surface opposite to the front surface.
- a virtual plane that includes the front surface and extends along the front surface is set as a first plane
- a virtual plane that includes the back surface and extends along the back surface is set as a second plane
- a virtual plane that is positioned at an equal distance from the first plane and the second plane is set as a third pane.
- FIGS. 4A and 4B are schematic views for explaining an example of the semiconductor device.
- a light shielding layer 303 corresponding to a region that should be blocked from light is arranged on the back surface 20 side of the semiconductor layer 102 through an insulating layer 302 .
- the light shielding layer 303 is electrically connected to the semiconductor layer 102 , and an insulating layer 312 is laminated on the light shielding layer 303 that is fixed to a predetermined electric potential.
- a planarized layer 304 is provided on the insulating layer 312 .
- a color filter array 305 for example, in red, green, and blue is arranged on the planarized layer 304 correspondingly to pixels, and a lens array 306 is arranged on the color filter array 305 .
- a difference between the first example ( FIG. 3A ) and the second example ( FIG. 3B ) lies in that a relation of a width of the isolation structure 702 and a width of the conductive member 310 in the in-plane direction X is different in the thickness direction Z.
- the width of the isolation structure 702 in the first plane 11 is wider than the width of the isolation structure 702 in the second plane 21 .
- a width We of the conductive member 310 in the first plane 11 is smaller than a width Wd of the conductive member 310 in the second plane 21 (Wc ⁇ Wd).
- the solid material 203 is provided at least between the second plane 21 and the intermediate plane 30 , that is, in the back-side region 32 .
- the solid material 203 is provided between the conductive member 310 and the semiconductor layer 102 .
- a part of the solid material 203 is provided also between the first plane 11 and the intermediate plane 30 , that is, in the front-side region 31 .
- the solid material 203 is provided to extend from the back-side region 32 to the front-side region 31 along the side surface 120 of the semiconductor layer 102 .
- the solid material 203 may be provided only between the second plane 21 and the third plane 30 .
- the distance P may be shorter than the distance Hb.
- the distance between the second plane 21 and the position 42 of the end of the hollow part 230 on the second plane 21 side is longer than the distance between the first plane 11 and the position 41 of the end of the hollow part 230 on the first plane 11 side.
- a difference between the first example ( FIG. 4A ) and the second example ( FIG. 4B ) lies in that a relation of a width of the isolation structure 712 and a width of the conductive member 310 in the in-plane direction X is different in the thickness direction Z.
- the width of the isolation structure 712 in the second plane 21 is greater than the width of the isolation structure 712 in the third plane 30 .
- the width of the isolation structure 712 in the second plane 21 is greater than the width of the isolation structure 712 in the first plane 11 .
- the element isolation unit 104 is formed on the front surface 10 side of a semiconductor substrate 101 having a thickness S.
- the element isolation unit 104 may have a LOCO structure or a STI structure.
- the element isolation unit 104 has the STI structure.
- the thickness S may be about 500 to 1000 ⁇ m.
- the thickness S of the semiconductor substrate 101 at this time is significantly greater than the thickness T of the semiconductor layer 102 obtained by thinning the semiconductor substrate 101 (for example, the thickness S is 10 to 1000 times the thickness T).
- the solid material 103 that is the insulator is formed in the trench 121 .
- the solid material 103 is able to be formed by forming a film of an insulating material with use of a CVD method or the like to fill the resultant in the trench 121 and removing the insulating material positioned outside the trench 121 by means of etching, a CMP method, or the like.
- the solid material 103 is formed in a region surrounding the conductive member 310 to be formed in the following step. At this time, the hollow part 130 is provided in a part of the trench 121 .
- the thinning is performed so that the hollow part 130 is not exposed to the side opposite to the front surface 10 .
- the center of the hollow part 130 is arranged to be closer to the front surface 10 side than the half of the depth D of the trench 121 , it is possible to reduce possibility that the hollow part 130 is exposed to the side opposite to the front surface 10 .
- a P-type semiconductor region (not illustrated) for suppressing dark current is formed on the back surface 20 side of the photodiode. While the thickness of the semiconductor substrate 101 before the thinning is, for example, about 600 ⁇ m, the thickness of the semiconductor layer 102 obtained after the thinning is, for example, about 1 to 10 ⁇ m. Thereby, electric charges generated by light incident through the back surface 20 are easily processed by the transistors on the front surface 10 side.
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/367,033 US11742372B2 (en) | 2016-01-26 | 2021-07-02 | Semiconductor device and method for manufacturing semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP2016-012868 | 2016-01-26 | ||
JP2016-012868 | 2016-01-26 | ||
JP2016012868A JP6700811B2 (en) | 2016-01-26 | 2016-01-26 | Semiconductor device and method of manufacturing semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/367,033 Continuation US11742372B2 (en) | 2016-01-26 | 2021-07-02 | Semiconductor device and method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
US20170213860A1 US20170213860A1 (en) | 2017-07-27 |
US11069732B2 true US11069732B2 (en) | 2021-07-20 |
Family
ID=59359530
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/413,711 Active 2037-10-28 US11069732B2 (en) | 2016-01-26 | 2017-01-24 | Semiconductor device and method for manufacturing semiconductor device |
US17/367,033 Active 2037-01-28 US11742372B2 (en) | 2016-01-26 | 2021-07-02 | Semiconductor device and method for manufacturing semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/367,033 Active 2037-01-28 US11742372B2 (en) | 2016-01-26 | 2021-07-02 | Semiconductor device and method for manufacturing semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (2) | US11069732B2 (en) |
JP (1) | JP6700811B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11749695B2 (en) | 2017-11-13 | 2023-09-05 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating the same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10048716B1 (en) * | 2017-02-10 | 2018-08-14 | Apple Inc. | Method and apparatus for power distribution in integrated circuits |
JP6779929B2 (en) | 2018-02-09 | 2020-11-04 | キヤノン株式会社 | Photoelectric converters and equipment |
US11756977B2 (en) * | 2018-06-21 | 2023-09-12 | Semiconductor Components Industries, Llc | Backside illumination image sensors |
CN109244086B (en) * | 2018-09-29 | 2020-06-23 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, display panel and display device |
JP2020113722A (en) * | 2019-01-17 | 2020-07-27 | 日本特殊陶業株式会社 | package |
Citations (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008021675A (en) | 2006-07-10 | 2008-01-31 | Renesas Technology Corp | Semiconductor device and its fabrication process |
US20090194836A1 (en) * | 2007-12-27 | 2009-08-06 | Kim Jong-Man | Image sensor and method for manufacturing the same |
JP2009267208A (en) | 2008-04-28 | 2009-11-12 | Toshiba Corp | Semiconductor device, and manufacturing method thereof |
US20100176271A1 (en) * | 2007-06-19 | 2010-07-15 | Siliconfile Technologies Inc. | Pixel array preventing the cross talk between unit pixels and image sensor using the pixel |
US20120025199A1 (en) * | 2010-07-27 | 2012-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd | Image Sensor with Deep Trench Isolation Structure |
US20120217605A1 (en) | 2011-02-25 | 2012-08-30 | Renesas Electronics Corporation | Semiconductor device |
US20120248580A1 (en) * | 2011-03-28 | 2012-10-04 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
US20120292782A1 (en) | 2011-05-19 | 2012-11-22 | Samsung Electronics Co., Ltd. | Microelectronic devices having conductive through via electrodes insulated by gap regions |
US20130115769A1 (en) | 2011-11-07 | 2013-05-09 | Globalfounderies Singapore Pte. Ltd. | Method for forming an air gap around a through-silicon via |
JP2013128036A (en) | 2011-12-19 | 2013-06-27 | Sony Corp | Image pickup element, image pickup apparatus, and manufacturing apparatus and method |
US20130323875A1 (en) * | 2012-05-30 | 2013-12-05 | Byung-Jun Park | Methods of forming a through via structure |
US20140002700A1 (en) * | 2012-06-29 | 2014-01-02 | Kabushiki Kaisha Toshiba | Solid-state image sensor |
US20140054662A1 (en) * | 2011-03-02 | 2014-02-27 | Sony Corporation | Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device |
US20140299958A1 (en) | 2013-04-08 | 2014-10-09 | Canon Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US20150008555A1 (en) * | 2013-07-05 | 2015-01-08 | Sony Corporation | Solid state imaging apparatus, production method thereof and electronic device |
US20150263054A1 (en) * | 2014-03-14 | 2015-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation with air-gap in backside illumination image sensor chips |
US20150372031A1 (en) * | 2014-06-23 | 2015-12-24 | Junho YOON | Image sensor and method of fabricating the same |
US20160163749A1 (en) * | 2014-12-09 | 2016-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench spacing isolation for complementary metal-oxide-semiconductor (cmos) image sensors |
US9379043B1 (en) * | 2015-02-10 | 2016-06-28 | Powertech Technology Inc. | TSV structure having insulating layers with embedded voids |
US20160204143A1 (en) * | 2015-01-13 | 2016-07-14 | Yun Ki Lee | Image sensors and methods of forming the same |
US20170069670A1 (en) * | 2015-08-28 | 2017-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench isolation structure in image sensor device |
US20180269237A1 (en) * | 2017-03-14 | 2018-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolation structure for reducing crosstalk between pixels and fabrication method thereof |
US20180294300A1 (en) * | 2015-09-30 | 2018-10-11 | Nikon Corporation | Image sensor and image-capturing device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012256785A (en) * | 2011-06-10 | 2012-12-27 | Elpida Memory Inc | Semiconductor device and manufacturing method therefor |
CN104253082B (en) * | 2013-06-26 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
JP2015076569A (en) * | 2013-10-11 | 2015-04-20 | ソニー株式会社 | Imaging device, manufacturing method thereof and electronic apparatus |
-
2016
- 2016-01-26 JP JP2016012868A patent/JP6700811B2/en active Active
-
2017
- 2017-01-24 US US15/413,711 patent/US11069732B2/en active Active
-
2021
- 2021-07-02 US US17/367,033 patent/US11742372B2/en active Active
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008021675A (en) | 2006-07-10 | 2008-01-31 | Renesas Technology Corp | Semiconductor device and its fabrication process |
US20100176271A1 (en) * | 2007-06-19 | 2010-07-15 | Siliconfile Technologies Inc. | Pixel array preventing the cross talk between unit pixels and image sensor using the pixel |
US20090194836A1 (en) * | 2007-12-27 | 2009-08-06 | Kim Jong-Man | Image sensor and method for manufacturing the same |
JP2009267208A (en) | 2008-04-28 | 2009-11-12 | Toshiba Corp | Semiconductor device, and manufacturing method thereof |
US20120025199A1 (en) * | 2010-07-27 | 2012-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd | Image Sensor with Deep Trench Isolation Structure |
US20120217605A1 (en) | 2011-02-25 | 2012-08-30 | Renesas Electronics Corporation | Semiconductor device |
US8884319B2 (en) * | 2011-02-25 | 2014-11-11 | Renesas Electronics Corporation | Semiconductor device with isolation insulating layer containing air gap |
US20140054662A1 (en) * | 2011-03-02 | 2014-02-27 | Sony Corporation | Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device |
US20120248580A1 (en) * | 2011-03-28 | 2012-10-04 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
US20120292782A1 (en) | 2011-05-19 | 2012-11-22 | Samsung Electronics Co., Ltd. | Microelectronic devices having conductive through via electrodes insulated by gap regions |
US20130115769A1 (en) | 2011-11-07 | 2013-05-09 | Globalfounderies Singapore Pte. Ltd. | Method for forming an air gap around a through-silicon via |
JP2013128036A (en) | 2011-12-19 | 2013-06-27 | Sony Corp | Image pickup element, image pickup apparatus, and manufacturing apparatus and method |
US20130323875A1 (en) * | 2012-05-30 | 2013-12-05 | Byung-Jun Park | Methods of forming a through via structure |
US20140002700A1 (en) * | 2012-06-29 | 2014-01-02 | Kabushiki Kaisha Toshiba | Solid-state image sensor |
US20140299958A1 (en) | 2013-04-08 | 2014-10-09 | Canon Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US20150008555A1 (en) * | 2013-07-05 | 2015-01-08 | Sony Corporation | Solid state imaging apparatus, production method thereof and electronic device |
US20150263054A1 (en) * | 2014-03-14 | 2015-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation with air-gap in backside illumination image sensor chips |
US20150372031A1 (en) * | 2014-06-23 | 2015-12-24 | Junho YOON | Image sensor and method of fabricating the same |
US20160163749A1 (en) * | 2014-12-09 | 2016-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench spacing isolation for complementary metal-oxide-semiconductor (cmos) image sensors |
US20160204143A1 (en) * | 2015-01-13 | 2016-07-14 | Yun Ki Lee | Image sensors and methods of forming the same |
US9379043B1 (en) * | 2015-02-10 | 2016-06-28 | Powertech Technology Inc. | TSV structure having insulating layers with embedded voids |
US20170069670A1 (en) * | 2015-08-28 | 2017-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench isolation structure in image sensor device |
US20180294300A1 (en) * | 2015-09-30 | 2018-10-11 | Nikon Corporation | Image sensor and image-capturing device |
US20180269237A1 (en) * | 2017-03-14 | 2018-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolation structure for reducing crosstalk between pixels and fabrication method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11749695B2 (en) | 2017-11-13 | 2023-09-05 | Samsung Electronics Co., Ltd. | Image sensor and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US11742372B2 (en) | 2023-08-29 |
JP6700811B2 (en) | 2020-05-27 |
US20170213860A1 (en) | 2017-07-27 |
JP2017135222A (en) | 2017-08-03 |
US20210335863A1 (en) | 2021-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11742372B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
US20200365641A1 (en) | Semiconductor device, manufacturing method thereof, and electronic apparatus | |
US9842878B2 (en) | Semiconductor device and a manufacturing method thereof | |
KR100855407B1 (en) | Image sensor and method for manufacturing thereof | |
JP5306123B2 (en) | Back-illuminated solid-state imaging device | |
JP5459357B2 (en) | Solid-state imaging device | |
US9324744B2 (en) | Solid-state image sensor having a trench and method of manufacturing the same | |
JP2006261638A (en) | Solid state imaging device, and driving method thereof | |
TW201106457A (en) | Semiconductor device | |
US11329088B2 (en) | Semiconductor apparatus and equipment | |
JP2021121043A (en) | Semiconductor device and semiconductor device manufacturing method | |
US10304889B2 (en) | Image sensor device and manufacturing method thereof | |
JP6701149B2 (en) | Imaging device and camera | |
JP6236181B2 (en) | Solid-state imaging device and manufacturing method thereof | |
JP2020129688A (en) | Imaging apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: CANON KABUSHIKI KAISHA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:UKIGAYA, NOBUTAKA;REEL/FRAME:042242/0597 Effective date: 20161226 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: AWAITING TC RESP., ISSUE FEE NOT PAID |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT RECEIVED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |