US10714893B2 - Mid-infrared vertical cavity laser - Google Patents

Mid-infrared vertical cavity laser Download PDF

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US10714893B2
US10714893B2 US16/037,850 US201816037850A US10714893B2 US 10714893 B2 US10714893 B2 US 10714893B2 US 201816037850 A US201816037850 A US 201816037850A US 10714893 B2 US10714893 B2 US 10714893B2
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vcl
wavelength
mirror
quantum wells
active region
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US20190044304A1 (en
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Vijaysekhar Jayaraman
Kevin Lascola
Stephen Segal
Fredrick Towner
Alex Cable
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Thorlabs Inc
Praevium Research Inc
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Praevium Research Inc
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    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3218—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities specially strained cladding layers, other than for strain compensation
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G01J2003/423—Spectral arrangements using lasers, e.g. tunable
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity

Definitions

  • This invention relates generally to mid-infrared semiconductor lasers, and more particularly to tunable mid-infrared semiconductor lasers, and vertical cavity lasers.
  • RTCW room-temperature continuous-wave
  • VCL vertical cavity laser
  • ICL interband cascade laser
  • VCLs have short gain length and generally worse thermal impedance than edge-emitters.
  • RTCW operation has also not yet been achieved beyond 3.0 um in VCLs employing type I quantum wells.
  • An embodiment of the present invention describes the first RTCW VCL structure operating at wavelengths greater than 3.0 um.
  • An embodiment of the present invention employs type I compressively strained quantum wells comprising Indium, Arsenic, and Antimony in an optically pumped structure to achieve RTCW VCL operation.
  • the structure employs periodic gain, by which it is meant a structure in which at least one quantum well is substantially aligned with a peak in the optical standing wave.
  • Periodic gain typically includes structures with multiple quantum wells substantially aligned with multiple standing wave peaks.
  • This optically pumped VCL structure offers several advantages. First, optical pumping requires no dopants in the optical cavity, eliminating free carrier absorption, which is the primary source of loss in eVCLs.
  • the periodic gain structure ideal for optical pumping, but difficult to implement in electrical pumping, maximizes effective gain, since all quantum wells can be positioned very close to a peak in the optical standing wave. Periodic gain also alleviates strain accumulation, enabling the use of a larger number of widely separated highly compressively strained quantum wells for higher gain than electrically pumped type I structures.
  • An embodiment of the present invention employs a barrier and cladding designed to maximize hole confinement in the InGaAsSb quantum wells.
  • This barrier/cladding is AlInGaAsSb/AlAsSb in one preferred embodiment, pure GaSb in another preferred embodiment, and pure AlAsSb in another embodiment.
  • One embodiment of the present invention provides an optically pumped vertical cavity laser (VCL) optically pumped with a pump source at a pump wavelength and providing VCL emission at an emission wavelength, said VCL including a first mirror, a second mirror, and a periodic gain active region, wherein said periodic gain active region includes at least two type I quantum wells containing Indium, Arsenic, and Antimony, said active region further including a barrier region adjacent to said type I quantum wells which is absorbing at said pump wavelength, and a cladding region adjacent to said barrier region, which is substantially transparent at said pump wavelength.
  • VCL vertical cavity laser
  • VCL vertical cavity laser
  • said VCL including a first mirror, a second mirror, and a periodic gain active region, wherein said periodic gain active region includes at least two type I quantum wells containing Indium, Arsenic, and Antimony, said active region further including a GaSb barrier region adjacent to said type I quantum wells.
  • VCL vertical cavity laser
  • a pump source at a pump wavelength and providing VCL emission at an emission wavelength
  • said VCL including a first mirror, a second mirror, and a periodic gain active region, wherein said periodic gain active region includes at least two type I quantum wells containing Indium, Arsenic, and Antimony, and at least one of said first and second mirrors comprises GaAs.
  • FIG. 1 is band lineup of various materials lattice matched or nearly lattice matched to GaSb, illustrating hole and electron confinement according to an embodiment of the present invention.
  • FIG. 2A shows a laser structure according to a preferred embodiment of the present invention
  • FIGS. 2B and 2C show the RTCW laser results of this embodiment.
  • FIG. 3 shows a preferred embodiment of the present invention including a MEMS-tunable structure.
  • FIG. 4 shows absorption lines of several industrially and environmentally important gases in a range of 3000-3600 nm.
  • FIG. 5 shows pressure-broadened absorption spectra of several gases important in combustion in a range of 4500-6000 nm.
  • FIG. 6 shows an optical spectroscopy system according to an embodiment of the present invention capable of measuring gas concentration as a function of spatial location.
  • the operating wavelength of the VCL is 3-5 um.
  • 6-12 compressively strained (1-2% strain) InGaAsSb quantum wells are employed, with pairs of quantum wells at 3-6 standing wave peaks in the optical cavity.
  • the InGaAsSb quantum wells are adjacent to a wider bandgap barrier layer, and the barrier layer is adjacent to a still wider bandgap cladding layer.
  • the barrier layer is quinary AlInGaAsSb substantially lattice-matched to GaSb
  • the cladding layer is AlAsSb substantially lattice-matched to GaSb.
  • the AlInGaAsSb absorbs a preferred pump wavelength in the range of 1.55 um, while AlAsSb is transparent to this pump wavelength and also serves as a hole blocking layer, as discussed further below.
  • the amount of quinary material is preferably adjusted to obtain a single-pass absorption efficiency of the active region of about 40-80% of the pump light, giving efficient use of pump energy in combination with relatively uniform pumping of quantum wells. Note that although InGaAsSb is the preferred well composition, InAsSb or other compounds may also be employed to obtain longer wavelengths closer to 5 um.
  • the InGaAsSb quantum wells are clad by pure GaSb layers, which can provide good hole confinement and thermal conductivity. Achieving this alternate embodiment, however, requires low temperature growth to overcome strain limitations.
  • the quantum wells can be clad directly by AlAsSb, without an intermediate AlInGaAsSb layer. This implementation is less preferred as the wide bandgap AlAsSb does not absorb pump wavelengths near 1.55 um, and absorption will occur only in the quantum wells, reducing absorption efficiency and increasing required threshold power.
  • the AlAsSb cladding could be eliminated, leaving only the AlInGaAsSb barrier. This approach has the disadvantage of increasingly poor hole confinement when moving to wavelengths substantially longer than about 3.0 um.
  • FIG. 1 shows estimated band offsets between strained InGaAsSb quantum wells, an adjacent AlInGaAsSb quinary barrier region, and an AlAsSb cladding region. These offsets are estimated from “The 6.1 Angstrom family (GaSb, InAs, AlSb) and its heterostructures: a selective review,” by H.
  • the 1.55 um pump wavelength is preferred, as cost-effective pump lasers are widely available at this wavelength, and in the range of about 1.45-1.65 um. This wavelength is also preferred because it will be absorbed by quinary AlInGaAsSb lattice-matched to GaSb, which is the preferred barrier material. Alternate pump wavelengths in the ranges of about 0.95-1.15 um and 1.7-2.1 um could be used in alternate preferred embodiments.
  • 6-12 quantum wells (approximate width 9 nm) with AlInGaAsSb barriers (50 nm width) and 1.55 um range pumping in this design provides both adequate gain and adequate absorption length, enabling efficient use of available pump power.
  • the VCL uses at least one wafer-bonded mirror containing Al(x)Ga(1 ⁇ x)As, where 0 ⁇ x ⁇ 1, grown on a GaAs substrate.
  • GaAs-based mirrors composed of alternating quarter wave layers of GaAs/AlGaAs are known to have very low mid-infrared loss, as discussed in “High performance near- and mid-infrared crystalline coatings,” by G. D. Cole et al, Optica vol. 3, issue 6, pp. 647-656 (2016).
  • These mirrors also have large refractive index contrast, correspondingly large bandwidth, are transparent to pump wavelengths >0.9 um, and have excellent thermal conductivity, as is well-known to those skilled in the art of NIR VCLs.
  • these mirrors can be grown with the requisite large thicknesses and high surface quality on large 4 to 6-inch substrates, so are commercially attractive for volume production of mid-IR VCLs.
  • Alternate preferred embodiments could use either epitaxially grown or wafer-bonded mirrors grown on GaSb substrates, such as alternating layers of GaSb/AlAsSb, which also provide high refractive index contrast.
  • the GaSb in the mirror would absorb the preferred pump wavelength of 1.55 um, reducing pump efficiency as well as increasing free-carrier loss in the mirror as the pump is absorbed and free-carriers are generated.
  • deposited mirrors such as Germanium/Zinc Sulfide (Ge/ZnS), or mirrors employing ZnSe, ThF4, CaF2, or Si could be used on one or both sides of the optical cavity.
  • FIGS. 2A-2C show a reduction to practice of a preferred embodiment of the present invention, demonstrating RTCW operation near 3.349 um.
  • the active region of the structure in this embodiment uses 5 pairs of compressively strained (1-2%) quantum wells 210 (about 9 nm thickness) with an approximate composition of In(0.55)Ga(0.45)As(0.26)Sb(0.74) on 5 peaks of a standing wave 270 .
  • Quinary barriers 220 (about 50 nm) with an approximate composition of Al(0.22)Ga(0.46)In(0.32)As(0.3)Sb(0.7) surround the InGaAsSb quantum wells, and absorb 1550 nm (1.55 um) pump radiation.
  • Lattice matched AlAsSb cladding regions 230 which are transparent to 1550 nm light, provide additional hole confinement.
  • the distance between pairs of wells is one half wavelength or approximately 485 nm.
  • the laser employs a GaAs/AlGaAs quarter wave wafer-bonded distributed Bragg reflector (DBR) mirror 240 , 250 on either side of the active region.
  • An optical pump beam at 1.55 um enters through the GaAs substrate 260 and the 3.349 um emission emerges through the opposite side of the structure.
  • DBR distributed Bragg reflector
  • the AlInGaAsSb and AlAsSb in FIG. 2A could be replaced by either pure GaSb or pure AlAsSb. This would require either low-temperature growth due to increased strain (pure GaSb) or higher pump power due to reduced absorption (pure AlAsSb).
  • the emission in this structure is single-wavelength, representing a single transverse and longitudinal mode.
  • FIG. 2B illustrates the trace provided by an FTIR optical spectrum analyzer (OSA) both above and below threshold, illustrating a clear lasing peak above threshold and only OSA noise below threshold.
  • FIG. 2C shows thermal tuning of the lasing wavelength as the pump power is varied. This device employs a shallow annular etch of approximately 20 um inner diameter at the wafer-bonded interface, to provide refractive index guiding.
  • the near field spot size needed to achieve efficient single-mode operation should preferably be in a range of about 8-26 um for emission in the range of 3.34 um.
  • This lateral beam dimension roughly scales with wavelength, and the ideal single-mode beam size should be in the range of about 2.5-7 times the emission wavelength.
  • the lateral mode field diameter can be controlled in a manner analogous to NIR VCSELs, using etched post or oxide confined geometries, as is well-known to those skilled in the art of VCSELs.
  • the structure of FIG. 2A can be fabricated according to an embodiment as follows. First the GaAs/AlGaAs DBR mirrors are grown on a GaAs substrate. In addition, the 10 QW periodic gain active region is separately grown on a GaSb substrate, and includes an InAsSb stop-etch layer to aid subsequent substrate removal.
  • the DBR mirror and active region can be joined by plasma-activated low temperature bonding, as is well-understood by those skilled in the art of wafer bonding. In this process both the GaAs surface and GaSb surface at the bond interface are plasma activated using an oxygen plasma, and two wafers are joined with the aid of a small amount of H 2 O at the bond interface to create an oxide bond.
  • This oxide may be an oxide of gallium, arsenic, indium, or antimony.
  • An interfacial Al 2 O 3 or SiO 2 layer can also be introduced at the interface to increase bond strength. The bond forms over several hours at room temperature, and subsequent annealing at 100-200° C. can increase bond strength.
  • An alternate bonding method is to use metal bonding, such as gold-gold bonding with an aperture in the metal to allow for light passage.
  • the GaSb substrate can be removed using well-known mixtures of HF/CrO 3 , stopping on an InAsSb stop-etch layer.
  • a mixture of 2:1 citric acid:hydrogen peroxide can be used to remove the stop etch layer and stop on a GaSb layer.
  • a second wafer bonding step joins the second GaAs/AlGaAs mirror to the active region, completing the laser cavity.
  • the GaAs substrate associated with the second mirror can be removed using 30:1 H 2 O 2 :NH 4 OH etching, stopping on a high aluminum containing AlGaAs layer as a stop-etch. This leaves the entire laser cavity on a single GaAs substrate associated with the bottom mirror.
  • the VCL comprises a fixed half-VCL comprising a fixed mirror and the active region, and a second movable mirror separated by a variable gap from the fixed half-VCL.
  • the movable mirror is actuated by a microelectromechanical system (MEMS).
  • MEMS microelectromechanical system
  • FIG. 3 illustrates a preferred embodiment of the periodic gain type I optically pumped MEMS-tunable VCL.
  • a fixed bottom mirror 310 is composed of GaAs/AlGaAs and joined at a wafer-bonded interface 320 to a type I periodic gain active region 330 comprising InGaAsSb quantum wells as described above.
  • a 1550 nm pump beam enters through the GaAs substrate 340 and bottom GaAs/AlGaAs mirror 310 , and is absorbed in the type I active region 330 .
  • the top mirror 350 is disposed on a Silicon nitride (SiN) membrane 360 , and is composed of deposited materials.
  • the SiN membrane 360 includes an aperture, such that no SiN is in the optical path.
  • the top mirror 350 includes alternating layers of ZnS and Ge. Alternate preferred materials for the top mirror include ZnSe, ThF 4 , and CaF 2 .
  • the top mirror could be GaAs/AlGaAs and the membrane GaAs instead of silicon nitride.
  • the top mirror should have a reflectivity in the range of 99% to 99.9%, and a roundtrip loss of less than 0.2%.
  • Application of a voltage between a top contact 370 integral with the flexible membrane and a bottom contact 380 integral with the fixed half-VCL causes contraction of the gap 390 and tuning to shorter wavelengths.
  • the gap is occupied with a sacrificial layer, such as polyimide, silicon, or germanium, as is well-known to those skilled in the art of MEMS, and the sacrificial layer is released near the end of the fabrication process to create the gap and suspended structure.
  • the fabrication of the MEMS actuator shown in FIG. 3 is very similar to MEMS actuators in the near-infrared. Key fabrication steps are well-known to those skilled in the art of MEMS-VCSELs, and are described for example in chapter 23 of “Optical Coherence Tomography: Principles and Applications,” by Wolfgang Drexler and James Fujimoto, 2 nd edition, 2015.
  • the MEMS tuning mechanism of FIG. 3 provides a wide tuning range, alternate tunable structures are possible, such as thermal tuning by an integrated resistive heater, or by variation of pump power, as shown in FIG. 2C .
  • An additional approach is the use of a second mirror that is detached from the half-VCL and is either fixed or movable depending on the tuning requirements.
  • One specific case would be the use of an optical fiber as the second movable mirror, attached to a transducer such as a piezoelectric translator to effect the tuning. This optical fiber would have an appropriate highly reflective optical coating on the fiber end face that acts as the movable mirror.
  • the tunable VCL according to an embodiment of the present invention can be incorporated into a number of spectroscopic detection systems.
  • Such systems can be configured to detect a variety of properties of a liquid, solid, or gas sample. Examples include concentration of environmentally and industrially important gases such methane, ethane, ammonia, carbon dioxide, water vapor, HF vapor, nitrous oxide, acetylene, carbonyl sulfide, dimethyl sulfide, hydrogen cyanide, ozone, and carbon monoxide.
  • FIGS. 4 and 5 illustrate the spectral dependence of the absorption of several of these gases, including pressure-broadened spectra of gases important in combustion in FIG. 5 .
  • a common way of measuring gas concentration is to measure the spectral dependence of tuned laser emission transmitted through a gas using an optical detector, and compare with the spectral dependence of light incident on the gas. Absorption lines will manifest as dips in the transmitted spectrum and the magnitude of these dips can with appropriate signal processing be related to the concentration of the gases of interest.
  • Optical spectroscopy using the VCL of an embodiment of the present invention can measure any change in wavelength dependence of optical emission from the VCL after interaction with a sample, including but not limited to changed spectral dependence of intensity, polarization, phase, or other parameters, and relate that change to a property of the sample. Interaction with a sample can also take multiple forms, including but not limited to transmission, reflection, or scattering.
  • tunable emission from a VCL will have a first spectral dependence, which will change to a transformed spectral dependence upon interaction with a sample of interest.
  • Quantifying the transformed spectral dependence relative to the first spectral dependence with an optical detector and appropriate signal processing, well-known to those skilled in the art of optical spectroscopy, can be used to determine properties of a sample of interest.
  • This analysis can be fed back to optimize another system.
  • a VCL based spectroscopy system can monitor gas concentration in a combustion system, and feed back to the combustion engine to optimize for example fuel efficiency.
  • FIG. 6 shows an example, in which tunable emission from a VCL 610 according to an embodiment of the present invention is steered across an oil well pad 630 using, for example, conventional beam-steering mirrors.
  • the beam traverses the entire oil well pad as it reflects off various retro-reflectors 620 and returns to an optical detector that is co-located with the beam-steered tunable VCL.
  • Analyzing the detected optical power vs. time can quantify the spatial distribution of methane gas across the oil well pad, and be used to assess methane leaks.
  • This information can be fed back to a shutoff valve to turn off or alter a gas flow in response to a detected leak.
  • Other applications of the generic configuration of FIG. 6 could include spatial mapping and monitoring of toxic gases in public setting such as stadiums, parks, airports, or in volcanically active areas.
  • VCL capable of RTCW operation described by the present disclosure may be employed below room temperature and/or in pulsed mode depending on the application. Such a VCL would still fall under the scope of the present invention.
  • VCL of FIGS. 2A and 3 can be fabricated in array form to create higher power or multi-wavelength arrays, as has previously been demonstrated in NIR VCSELs.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190348813A1 (en) * 2018-05-11 2019-11-14 Axsun Technologies, Inc. Optically pumped tunable VCSEL employing geometric isolation

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112805889A (zh) * 2018-10-08 2021-05-14 统雷有限公司 电泵浦垂直腔激光器
TWI742714B (zh) * 2019-06-11 2021-10-11 全新光電科技股份有限公司 半導體雷射二極體
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CN113839305B (zh) * 2021-11-23 2022-02-18 中国科学院苏州纳米技术与纳米仿生研究所 中红外垂直腔面激光器及其制作方法
US20230258848A1 (en) * 2022-02-11 2023-08-17 California Institute Of Technology Thin-film Structures for Optical Applications Comprising Fluoride Mixtures

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
US20020025590A1 (en) * 2000-08-22 2002-02-28 Hall Eric M. Method of fabricating a distributed bragg reflector by controlling material composition using molecular beam epitaxy
WO2003058771A2 (en) 2001-12-27 2003-07-17 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US20030164503A1 (en) * 2002-03-04 2003-09-04 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
US20040135136A1 (en) * 2002-11-21 2004-07-15 Takashi Takahashi Semiconductor light emitter
US20050173694A1 (en) 2004-02-05 2005-08-11 Mawst Luke J. Type II quantum well mid-infrared optoelectronic devices
US8000371B2 (en) * 2009-09-22 2011-08-16 Palo Alto Research Center Incorporated Vertical surface emitting semiconductor device
WO2014018945A1 (en) 2012-07-27 2014-01-30 Thorlabs.Inc. Quantum well tunable short cavity laser
US20150270677A1 (en) * 2014-03-18 2015-09-24 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Optically pumped semiconductor disk laser
US20170117684A1 (en) * 2014-05-21 2017-04-27 Universite De Montpellier Vertical external cavity surface emitting laser devices allowing high coherence, high power and large tunability

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010069987A1 (de) 2008-12-19 2010-06-24 Deutsches Krebsforschungszentrum Verfahren und vorrichtung zur dynamischen verlagerung eines lichtstrahls gegenüber einer den lichtstrahl fokussierenden optik
CN101510667A (zh) * 2009-04-07 2009-08-19 中国科学院长春光学精密机械与物理研究所 大孔径衬底出光垂直腔面发射半导体激光器
US8441633B2 (en) 2009-10-29 2013-05-14 California Institute Of Technology Multiple-photon excitation light sheet illumination microscope
US10283658B2 (en) * 2011-02-09 2019-05-07 The Board Of Regents Of The University Of Oklahoma Interband cascade devices
WO2012133623A1 (ja) 2011-03-31 2012-10-04 株式会社ニコン 走査型顕微鏡
JP2013527629A (ja) * 2011-04-20 2013-06-27 アメリカ合衆国 設計されたキャリア密度を有するバンド間カスケードレーザー
DE102013218795A1 (de) 2013-09-19 2015-03-19 Carl Zeiss Microscopy Gmbh Laserscanningmikroskop und Verfahren zur Korrektur von Abbildungsfehlern insbesondere in der hochauflösenden Scanning-Mikroskopie
WO2017075628A1 (en) 2015-11-01 2017-05-04 Howard Hughes Medical Institute Large field of view, high resolution microscope

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
US20020025590A1 (en) * 2000-08-22 2002-02-28 Hall Eric M. Method of fabricating a distributed bragg reflector by controlling material composition using molecular beam epitaxy
WO2003058771A2 (en) 2001-12-27 2003-07-17 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US20030164503A1 (en) * 2002-03-04 2003-09-04 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
US20040135136A1 (en) * 2002-11-21 2004-07-15 Takashi Takahashi Semiconductor light emitter
US20050173694A1 (en) 2004-02-05 2005-08-11 Mawst Luke J. Type II quantum well mid-infrared optoelectronic devices
US8000371B2 (en) * 2009-09-22 2011-08-16 Palo Alto Research Center Incorporated Vertical surface emitting semiconductor device
WO2014018945A1 (en) 2012-07-27 2014-01-30 Thorlabs.Inc. Quantum well tunable short cavity laser
WO2014018942A1 (en) 2012-07-27 2014-01-30 Thorlabs, Inc. Tunable short cavity laser sensor
US20150270677A1 (en) * 2014-03-18 2015-09-24 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Optically pumped semiconductor disk laser
US20170117684A1 (en) * 2014-05-21 2017-04-27 Universite De Montpellier Vertical external cavity surface emitting laser devices allowing high coherence, high power and large tunability

Non-Patent Citations (15)

* Cited by examiner, † Cited by third party
Title
G. Belenky et al.,"Type-I Diode Lasers for Spectral Region Above 3 μm," IEEE Journal of Selected Topics in Quantum Electronics, vol. 17. No. 5, Sep./Oct. 2011, pp. 1426-1434.
G. Belenky, et al,"Type I Diode Lasers for Spectral Region Above 3.0um," IEEE Journal of Selected Topics in Quantum Electronics, vol. 17. No. 5, Sep./Oct. 2011.
G.D. Cole et al,"High performance near- and midinfrared crystalline coatings," Optica vol. 3, issue 6, pp. 647-656 (2016).
G.D. Cole et al.,"High performance near- and mid-infrared crystalline coatings," Optica vol. 3, No. 6, Jun. 2016, pp. 647-656.
G.K. Veerabathran et al., "Room-temperature vertical cavity surface emitting lasers at 4um with GaSb-based type II quantum wells,"; Applied Physics Letters 110, (2017), pp. 071104-1 to 071104-5.
G.K. Veerabathran, et al; "Room-temperature vertical cavity surface emitting lasers at 4um with GaSb-based type II quantum wells,"; Applied Physics Letters 110, 071104, (2017).
H. Kroemer, "The 6.1 Angstrom family (GaSb, InAs, AlSb) and its heterostructures: a selective review," Physica E, 20 (2004), 196-203.
H. Kroemer, "The 6.1 Angstrom family (GaSb, InAs, AlSb) and its heterostructures: a selective review," Physica E, 20 (2004), pp. 196-203.
I. Vurgaftman et al., "Band Parameters for III-V compound semiconductors and their alloys," Journal of Applied Physics, vol. 89, No. 11, Jun. 1, 2001, pp. 5815-5875.
I. Vurgaftmann, et al, "Band Parameters for III-V compound semiconductors and their alloys," Journal of Applied Physics, vol. 80, no. 11, Jun. 1, 2001.
International search report and written opinion issued for corresponding International Patent Application No. PCT/US2018/042512, dated Oct. 25, 2018.
VCSEL "Widely Tunable VCSEL Fabrication" VJ chapter 23 Oct. (and MEMS-VCSEL fabrication).
W. Drexler et al., "Optical Coherence Tomography: Principles and Applications," 2nd edition, chapter 23, 2015, 2 pages.
W.W. Bewley et al., "Room-temperature Mid-Infrared Interband Cascade Vertical Cavity Surface Emitting Lasers,"; Applied Physics Letters 109, (2016), pp. 151108-1 to 151108-5.
W.W. Bewley et al; "Room-temperature Mid-Infrared Interband Cascade Vertical Cavity Surface Emitting Lasers,"; Applied Physics Letters 109, 151108 (2016).

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190348813A1 (en) * 2018-05-11 2019-11-14 Axsun Technologies, Inc. Optically pumped tunable VCSEL employing geometric isolation
US10951007B2 (en) * 2018-05-11 2021-03-16 Excelitas Technologies Corp. Optically pumped tunable VCSEL employing geometric isolation
JP2021527943A (ja) * 2018-05-11 2021-10-14 エクセリタス テクノロジーズ コーポレイション 幾何学的分離を採用する光ポンピングチューナブルｖｃｓｅｌ
US11749962B2 (en) 2018-05-11 2023-09-05 Excelitas Technologies Corp. Optically pumped tunable VCSEL employing geometric isolation
JP7443248B2 (ja) 2018-05-11 2024-03-05 エクセリタス テクノロジーズ コーポレイション 幾何学的分離を採用する光ポンピングチューナブルｖｃｓｅｌ

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