US10644176B2 - Quantum dot photodetector apparatus and associated methods - Google Patents
Quantum dot photodetector apparatus and associated methods Download PDFInfo
- Publication number
- US10644176B2 US10644176B2 US15/779,213 US201615779213A US10644176B2 US 10644176 B2 US10644176 B2 US 10644176B2 US 201615779213 A US201615779213 A US 201615779213A US 10644176 B2 US10644176 B2 US 10644176B2
- Authority
- US
- United States
- Prior art keywords
- electrical current
- photodetector
- photodetectors
- pair
- channel member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims description 24
- 230000008859 change Effects 0.000 claims abstract description 45
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 38
- 230000007423 decrease Effects 0.000 claims abstract description 17
- 238000012546 transfer Methods 0.000 claims description 42
- 239000003446 ligand Substances 0.000 claims description 31
- 239000002800 charge carrier Substances 0.000 claims description 30
- 230000005684 electric field Effects 0.000 claims description 19
- 238000004590 computer program Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000006870 function Effects 0.000 description 17
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 230000015654 memory Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 229910021389 graphene Inorganic materials 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 229910052946 acanthite Inorganic materials 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000011664 signaling Effects 0.000 description 4
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 2
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000003973 alkyl amines Chemical class 0.000 description 2
- ZWOASCVFHSYHOB-UHFFFAOYSA-N benzene-1,3-dithiol Chemical compound SC1=CC=CC(S)=C1 ZWOASCVFHSYHOB-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229940049964 oleate Drugs 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021428 silicene Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4406—Plural ranges in circuit, e.g. switchable ranges; Adjusting sensitivity selecting gain values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H01L51/42—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
Definitions
- the present disclosure relates particularly to photodetectors, associated methods and apparatus.
- Certain embodiments specifically concern an apparatus comprising at least one pair of first and second photodetectors each having a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation.
- the apparatus is configured such that the first and second photodetectors generate electron-hole pairs which produce an increase and decrease in electrical current respectively, the combined change in electrical current of the pair of first and second photodetectors being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation.
- Some embodiments may relate to portable electronic devices, in particular, so-called hand-portable electronic devices which may be hand-held in use (although they may be placed in a cradle in use). Such hand-portable electronic devices include so-called Personal Digital Assistants (PDAs) and tablet PCs.
- PDAs Personal Digital Assistants
- tablet PCs tablet PCs.
- the portable electronic devices/apparatus may provide one or more audio/text/video communication functions (e.g. tele-communication, video-communication, and/or text transmission, Short Message Service (SMS)/Multimedia Message Service (MMS)/emailing functions, interactive/non-interactive viewing functions (e.g. web-browsing, navigation, TV/program viewing functions), music recording/playing functions (e.g. MP3 or other format and/or (FM/AM) radio broadcast recording/playing), downloading/sending of data functions, image capture function (e.g. using a (e.g. in-built) digital camera), and gaming functions.
- audio/text/video communication functions e.g. tele-communication, video-communication, and/or text transmission, Short Message Service (SMS)/Multimedia Message Service (MMS)/emailing functions, interactive/non-interactive viewing functions (e.g. web-browsing, navigation, TV/program viewing functions), music recording/playing functions (e.g. MP3
- an apparatus comprising at least one pair of first and second photodetectors,
- the apparatus may be configured such that the first and second photodetectors of the photodetector pair generate electron-hole pairs which simultaneously produce an increase and decrease in electrical current through the channel members, respectively.
- the plurality of quantum dots may comprise ligands attached thereto which are configured to enable the transfer of either electrons or holes of the generated electron-hole pairs to the channel member leaving the remaining charge carriers on the quantum dots to produce the detectable change in electrical current.
- the first and second photodetectors of the photodetector pair may comprise similarly doped channel members, and the ligands of the first photodetector may be configured to enable the transfer of a different type of charge carrier to the respective channel member than the ligands of the second photodetector in order to produce the different changes in electrical current.
- the first and second photodetectors of the photodetector pair may comprise oppositely doped channel members, and the ligands of the first photodetector may be configured to enable the transfer of the same type of charge carrier to the respective channel member as the ligands of the second photodetector in order to produce the different changes in electrical current.
- the first and second photodetectors of the photodetector pair may each comprise a gate electrode configured to generate an electric field upon the application of a voltage thereto, the generated electric field enabling the transfer of either electrons or holes of the generated electron-hole pairs to the channel member leaving the remaining charge carriers on the quantum dots to produce the detectable change in electrical current.
- the first and second photodetectors of the photodetector pair may comprise similarly doped channel members, and the voltage applied to the gate electrode of the first photodetector may have an opposite polarity to the voltage applied to the gate electrode of the second photodetector such that the resulting electric fields enable the transfer of different types of charge carrier to the respective channel members in order to produce the different changes in electrical current.
- the first and second photodetectors of the photodetector pair may comprise oppositely doped channel members, and the voltage applied to the gate electrode of the first photodetector may have the same polarity as the voltage applied to the gate electrode of the second photodetector such that the resulting electric fields enable the transfer of the same type of charge carrier to the respective channel members in order to produce the different changes in electrical current.
- the gate electrode of one or more of the first and second photodetectors of the photodetector pair may be configured such that the electric field generated by the applied voltage facilitates or inhibits the transfer of charge carriers by the ligands to the respective channel member.
- the gate electrode of one or more of the first and second photodetectors of the photodetector pair may be configured such that the electric field generated by the applied voltage causes electrostatic doping of the respective channel member.
- the first and second photodetectors of the photodetector pair may be arranged such that the combined change in electrical current is converted into a corresponding voltage signal.
- the first and second photodetectors of the photodetector pair may be arranged to form a half-bridge circuit configured to convert the combined change in electrical current into a single-ended voltage signal.
- the apparatus may comprise at least two pairs of first and second photodetectors arranged to form a full-bridge circuit configured to convert the combined change in electrical current into a differential voltage signal.
- One or more of the material, size and shape of the quantum dots may be configured such that the electron-hole pairs are generated on exposure to at least one of the following types of electromagnetic radiation: x-rays, visible light, infrared, ultraviolet, radio waves, microwaves, gamma rays and thermal radiation.
- the channel member of at least one photodetector may comprise one or more of a two-dimensional material, graphene, a graphene-like material and a transition metal dichalcogenide. It will be appreciated that channel members may comprise membranes/foils of nanometre thick carbon structures.
- the graphene-like material may comprise one or more of graphene oxide, phosphorene, silicene, germanene, stanene, h-BN, AlN, GaN, InN, InP, InAs, BP, BAs and GaP.
- the quantum dots of at least one photodetector may comprise one or more of PbS, CdSe, CdS, PbSe, ZnO, ZnS, CZTS, Cu 2 S, Bi 2 S 3 , Ag 2 S, Ag 2 S, HgTe, CdHgTe, InAs, InSb, Ge and CIS.
- the ligands of at least one photodetector may comprise one or more of oleate, trioctylphosphine oxide, alkylphosphonic acid, fatty acid, long-chain alkylamine, 1,2-ethanedithiol, pyridine, butylamine and 1,3-benzenedithiol.
- the source, drain and gate electrodes of at least one photodetector may comprise one or more of a metal, a metal nanoparticle ink, silver, gold, copper, nickel, cobalt, palladium, a conductive metal oxide, a carbon-based material, an organic material and a polymer.
- the apparatus may be one or more of an electronic device, a portable electronic device, a portable telecommunications device, a mobile phone, a personal digital assistant, a tablet, a phablet, a desktop computer, a laptop computer, a server, a smartphone, a smartwatch, smart eyewear, a sensor, an x-ray sensor, and a module for one or more of the same.
- the method may comprise forming the at least one pair of first and second photodetectors.
- One or more of the computer programs may, when run on a computer, cause the computer to configure any apparatus, including a battery, circuit, controller, or device disclosed herein or perform any method disclosed herein.
- One or more of the computer programs may be software implementations, and the computer may be considered as any appropriate hardware, including a digital signal processor, a microcontroller, and an implementation in read only memory (ROM), erasable programmable read only memory (EPROM) or electronically erasable programmable read only memory (EEPROM), as non-limiting examples.
- the software may be an assembly program.
- One or more of the computer programs may be provided on a computer readable medium, which may be a physical computer readable medium such as a disc or a memory device, or may be embodied as a transient signal.
- a transient signal may be a network download, including an internet download.
- the present disclosure includes one or more corresponding aspects, example embodiments or features in isolation or in various combinations whether or not specifically stated (including claimed) in that combination or in isolation.
- Corresponding means for performing one or more of the discussed functions are also within the present disclosure.
- FIG. 1 shows one example of a photodetector apparatus comprising a half-bridge circuit
- FIG. 2 shows a photodetector comprising a quantum dot field effect transistor
- FIG. 3 shows one example of the present apparatus comprising a half-bridge circuit
- FIG. 4 shows how ligands can be used to control the transfer of charge carriers from a quantum dot to the channel member
- FIG. 5 shows how a gate electrode can be used to control the transfer of charge carriers from a quantum dot to the channel member
- FIG. 6 shows how the optoelectronic response of a quantum dot photodetector varies with applied gate voltage
- FIG. 7 shows one example of a photodetector apparatus comprising a full-bridge circuit
- FIG. 8 shows one example of the present apparatus comprising a full-bridge circuit
- FIG. 9 shows example voltage output signals for the apparatus illustrated in FIGS. 1, 3, 7 and 8 ;
- FIG. 10 shows another example of the present apparatus
- FIG. 11 shows a method of using the present apparatus
- FIG. 12 shows a method of making the present apparatus
- FIG. 13 shows a computer-readable medium comprising a computer program configured to perform, control or enable a method described herein.
- FIG. 1 shows one example of an existing photodetector device comprising a resistor R and a field-effect transistor-based photodetector FET connected in series between power supply VDD and ground GND terminals.
- Field-effect transistors comprise source and drain electrodes configured to enable a flow of electrical current through a channel member between the source and drain electrodes, and a gate electrode configured to vary the electrical current flowing through the channel member when a voltage is applied thereto.
- the gate electrode is replaced (or supplemented) by a photosensitive material configured to produce a detectable change in the electrical current on exposure to incident electromagnetic radiation 101 which is indicative of one or more of the presence and magnitude of the incident electromagnetic radiation.
- FIG. 2 shows a photodetector device comprising a photosensitive material on top of the channel member 202 of the field-effect transistor (which itself is supported on a substrate 207 ).
- the device also comprises a power supply configured to apply a potential difference V between the source 203 and drain 204 electrodes, and an ammeter 205 configured to measure the electrical current flowing through the channel member 202 .
- the photosensitive material comprises a plurality of quantum dots 206 configured to generate electron-hole pairs on exposure to the incident electromagnetic radiation 201 .
- the apparatus is configured such that, after the generation of these electron-hole pairs, either the electrons or the holes are transferred to the channel member 202 leaving the remaining charge carriers on the quantum dots 206 . These remaining charge carriers then gate the channel member 202 causing a detectable change in the current flowing therethrough.
- the output signal of the photodetector is passed to an analogue-to-digital converter (ADC) to enable subsequent digital signal processing.
- ADC analogue-to-digital converter
- the current mode signal of the field-effect transistor i.e. the change in electrical current flowing through the channel member 202
- VN the voltage signal
- An alternative option is to incorporate a transimpedance amplifier, but this requires more hardware, power and surface area.
- FIG. 3 shows one example of the present apparatus.
- the apparatus comprises at least one pair of first FET 1 and second FET 2 photodetectors.
- Each photodetector of the photodetector pair FET 1 , 2 comprises a channel member, respective source and drain electrodes configured to enable a flow of electrical current through the channel member between the source and drain electrodes, and a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation 301 to produce a detectable change in the electrical current flowing through the channel member.
- the apparatus is configured such that the first FET 1 and second FET 2 photodetectors of the photodetector pair FET 1 , 2 generate electron-hole pairs which (e.g. simultaneously) produce an increase and decrease in electrical current through the channel members respectively, the combined change in electrical current of the pair of first FET 1 and second FET 2 photodetectors being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation 301 .
- the output signal of the present apparatus can be up to twice as large as the photodetector device of FIG. 1 .
- the second photodetector FET 2 essentially replaces the resistor R of FIG. 1 , and also removes the need for an additional transimpedence amplifier, a greater surface area of the apparatus may be used for detection of the incident electromagnetic radiation 301 . This aspect provides for a more efficient device.
- the channel member of each photodetector FET 1 , 2 may comprise graphene.
- Graphene exhibits a relatively high charge carrier mobility which is particularly sensitive to the electric field generated by the gate electrode or photosensitive material.
- the channel member of at least one photodetector FET 1 , 2 may comprise different two-dimensional materials such as a graphene-like material (e.g. graphene oxide, phosphorene, silicone, germanene, stanine, h-BN, AlN, GaN, InN, InP, InAs, BP, BaS or GaP) or a transition metal dichalcogenide (e.g.
- the source, drain and gate electrodes of at least one photodetector may comprise one or more of a metal, a metal nanoparticle ink, silver, gold, copper, nickel, cobalt, a conductive metal oxide, a carbon-based material, an organic material and a polymer.
- the apparatus may be configured such that the first FET 1 and second FET 2 photodetectors produce different changes in electrical current. For example, it may be achieved using different ligands attached to the quantum dots of the respective photodetectors FET 1 , 2 .
- the first FET 1 and second FET 2 photodetectors of the photodetector pair FET 1 , 2 may comprise similarly doped channel members, and the ligands of the first photodetector FET 1 may be configured to enable the transfer of a different type of charge carrier to the respective channel member than the ligands of the second photodetector FET 2 .
- first FET 1 and second FET 2 photodetectors of the photodetector pair FET 1 , 2 may comprise oppositely doped channel members, and the ligands of the first photodetector FET 1 may be configured to enable the transfer of the same type of charge carrier to the respective channel member as the ligands of the second photodetector FET 2 .
- FIG. 4 shows how ligands 408 can be used to control the transfer of charge carriers 409 from a quantum dot 406 to the channel member 402 .
- the incident electromagnetic radiation 401 causes excitation of an electron 409 in the quantum dot 406 generating an electron-hole pair.
- the ligands 408 attached to the quantum dot 406 are configured such that the electron 409 of the electron-hole pair is able to tunnel through the ligands 408 to the channel member 402 leaving the remaining hole 410 on the quantum dot 406 to produce the detectable change in electrical current.
- the ligands 408 attached to the quantum dot 406 may be configured such that the hole 410 of the electron-hole pair is able to tunnel through the ligands 408 to the channel member 402 leaving the remaining electron 409 on the quantum dot 406 to produce the detectable change in electrical current.
- the charge transfer mechanism is not limited solely to electron/hole tunnelling, however. In some examples, thermally-activated electron/hole hopping may be used as well as or instead of electron/hole tunnelling.
- the channel member 402 When the channel member 402 is p-doped and the ligands 408 enable the transfer of electrons 409 from the quantum dot 406 to the channel member 402 , the remaining holes 410 on the quantum dot 406 create a depletion region in the channel member 402 causing a decrease in the electrical current flowing therethrough.
- the ligands 408 enable the transfer of holes 410 from the quantum dot 406 to the channel member 402
- the remaining electrons 409 on the quantum dot 406 create a conductive region in the channel member 402 causing an increase in the electrical current flowing therethrough.
- the channel member 402 is n-doped.
- One or more of the material, size and shape of the quantum dots 406 may be configured such that the electron-hole pairs are generated on exposure to at least one of the following types of electromagnetic radiation 401 : x-rays, visible light, infrared, ultraviolet, radio waves, microwaves, gamma rays and thermal radiation.
- the quantum dots 406 of at least one of the photodetectors may comprise one or more of PbS, CdSe, CdS, PbSe, ZnO, ZnS, CZTS, Cu 2 S, Bi 2 S 3 , Ag 2 S, Ag 2 S, HgTe, CdHgTe, InAs, InSb, Ge and ClS, and the ligands 408 of at least one of the photodetectors may comprise one or more of oleate, trioctylphosphine oxide, alkylphosphonic acid, fatty acid, long-chain alkylamine, 1,2-ethanedithiol, pyridine, butylamine and 1,3-benzenedithiol.
- the transfer of charge carriers 409 , 410 is also dependent upon the band structure between the quantum dot 406 and the channel member 402 , which can be affected by doping or bias voltages.
- another way of configuring the apparatus such that the first and second photodetectors produce different changes in electrical current is by applying voltages of opposite polarity to respective gate electrodes of the first and second photodetectors.
- the first and second photodetectors of the photodetector pair may comprise similarly doped channel members 402 , and the voltage applied to the gate electrode of the first photodetector may have an opposite polarity to the voltage applied to the gate electrode of the second photodetector.
- first and second photodetectors of the photodetector pair may comprise oppositely doped channel members 402 , and the voltage applied to the gate electrode of the first photodetector may have the same polarity as the voltage applied to the gate electrode of the second photodetector.
- FIG. 5 shows how a gate electrode 511 can be used to control the transfer of charge carriers 509 , 510 from a quantum dot 506 to the channel member 502 .
- the gate electrode 511 is separated from the channel member 502 by a layer of dielectric material 512 to prevent a flow of electrical current therebetween.
- a voltage 513 is applied to the gate electrode 511 , an electric field is produced which enables the transfer of an electron 509 or hole 510 of the generated electron-hole pair to the channel member 502 leaving the remaining charge carrier on the quantum dot 506 to produce the detectable change in electrical current.
- the resulting electric field enables the transfer of an electron 509 from the quantum dot 506 to the channel member 502 .
- a negative voltage is applied to the gate electrode 511 , the resulting electric field enables the transfer of a hole 510 from the quantum dot 506 to the channel member 502 . Therefore, when the channel member 502 is p-doped and the applied voltage 513 enables the transfer of an electron 509 from the quantum dot 506 to the channel member 502 , the remaining hole 510 on the quantum dot 506 creates a depletion region in the channel member 502 causing a decrease in the electrical current flowing therethrough.
- the applied voltage 513 enables the transfer of a hole 510 from the quantum dot 506 to the channel member 502 , the remaining electron 509 on the quantum dot 506 creates a conductive region in the channel member 502 causing an increase in the electrical current flowing therethrough.
- the channel member 502 is n-doped.
- FIG. 6 shows an example of how the optoelectronic response of a quantum dot photodetector can vary with applied gate voltage.
- an increase in the intensity of the incident electromagnetic radiation caused a decrease in electrical current when a negative voltage was applied to the gate electrode, and an increase in electrical current when a positive voltage was applied to the gate electrode. Therefore, if the first photodetector FET 1 is biased with a positive gate voltage and the second photodetector FET 2 is biased with a negative gate voltage, the incident electromagnetic radiation will cause an increase and decrease in electrical current through the associated channel members respectively.
- one or more of the first FET 1 and second FET 2 photodetectors may utilise ligands and a gate electrode to control the transfer of charge carriers from the quantum dots to the respective channel member.
- the electric field generated by the applied gate voltage can be used to facilitate or inhibit the transfer of charge carriers by the ligands to the respective channel member.
- a positive gate voltage may be used to facilitate the transfer of electrons or a negative gate voltage may be used to inhibit the transfer of electrons.
- the electric field generated by the gate voltage increases or decreases the speed of charge transfer, respectively.
- the channel member of one or more of the first FET 1 and second FET 2 photodetectors of the photodetector pair FET 1 , 2 may be chemically doped with impurities.
- the gate electrode of one or more of the first FET 1 and second FET 2 photodetectors may be configured such that the electric field generated by the applied gate voltage causes electrostatic doping of the respective channel member.
- a positive gate voltage can be used to transfer holes from an undoped channel member to the quantum dots leaving the electrons of the electron-hole pairs in the channel member (i.e.
- the gate electrode may be used to control the transfer of charge carriers both to and from the channel member.
- FIG. 7 shows another example of a photodetector device.
- the photodetectors FET and resistors R are arranged to form a full-bridge circuit configured to convert the change in electrical current into a differential voltage signal VN, VP.
- Differential signals VN, VP tend to be less sensitive to supply interference and common mode noise, which results in a greater signal-to-noise ratio.
- FIG. 8 shows another example of the present apparatus.
- the resistors R of FIG. 7 are replaced with photodetectors FET 1 configured to provide an opposite response to the incident electromagnetic radiation than the existing photodetectors FET 2 .
- the full-bridge circuit of FIG. 8 therefore comprises two pairs of first FET 1 and second FET 2 photodetectors, but it could be extended to include one or more further photodetector pairs FET 1 , 2 .
- FIG. 9 shows example voltage output signals for the apparatus illustrated in FIGS. 1, 3, 7 and 8 (respectively from left to right).
- the left-hand side of the figure shows the single-ended voltage output signals for the half-bridge circuits and the right-hand side of the figure shows the differential voltage output signals for the full-bridge circuits.
- the magnitude of the output signal increases with the number of photodetectors (active components) per branch.
- FIG. 10 shows another example of the present apparatus 1014 .
- the apparatus 1014 may be one or more of an electronic device, a portable electronic device, a portable telecommunications device, a mobile phone, a personal digital assistant, a tablet, a phablet, a desktop computer, a laptop computer, a server, a smartphone, a smartwatch, smart eyewear, a sensor, an x-ray sensor, and a module for one or more of the same.
- the apparatus 1014 comprises the various components described previously (denoted collectively by reference numeral 1015 ), an ammeter 1016 , a voltmeter 1017 , a power supply 1018 , a processor 1019 and a storage medium 1020 , which are electrically connected to one another by a data bus 1021 .
- the processor 1019 is configured for general operation of the apparatus 1014 by providing signalling to, and receiving signalling from, the other components to manage their operation.
- the storage medium 1020 is configured to store computer code configured to perform, control or enable operation of the apparatus 1014 .
- the storage medium 1020 may also be configured to store settings for the other components.
- the processor 1019 may access the storage medium 1020 to retrieve the component settings in order to manage the operation of the other components.
- the power supply 1018 is configured to apply a voltage between the source and drain electrodes of each photodetector to enable a flow of electrical current through the respective channel member.
- the power supply 1018 may be configured to apply a further voltage to the gate electrode to control the transfer of charge carriers between the quantum dots and channel member.
- the ammeter 1016 is configured to measure the electrical current through the channel members of the respective photodetectors so that any changes in current caused by the incident electromagnetic radiation can be determined. Additionally or alternatively, the voltmeter 1017 is configured to measure the voltage signal corresponding to the combined change in electrical current.
- the processor 1019 is configured to determine one or more of the presence and magnitude of the incident electromagnetic radiation. In order to determine the presence/magnitude of the incident electromagnetic radiation, the processor 1019 may use predetermined calibration data saved in the storage medium 1020 which correlates the intensity of the electromagnetic radiation with the combined change in current or the corresponding voltage signal.
- the processor 1019 may be a microprocessor, including an Application Specific Integrated Circuit (ASIC).
- the storage medium 1020 may be a temporary storage medium such as a volatile random access memory.
- the storage medium 1020 may be a permanent storage medium such as a hard disk drive, a flash memory, or a non-volatile random access memory.
- the power supply 1018 may comprise one or more of a primary battery, a secondary battery, a capacitor, a supercapacitor and a battery-capacitor hybrid.
- FIG. 11 shows schematically the main steps 1122 - 1123 of a method of using the present apparatus.
- the method generally comprises: measuring the combined change in electrical current of the first and second photodetectors or the corresponding voltage signal 1122 ; and determining one or more of the presence and magnitude of the incident electromagnetic radiation based on the combined change in electrical current or corresponding voltage signal 1123 .
- FIG. 12 shows schematically the main steps 1224 - 1225 of a method of making the present apparatus.
- the method generally comprises: forming at least one pair of first and second photodetectors 1224 ; and configuring the apparatus such that the first and second photodetectors generate electron-hole pairs which produce an increase and decrease in electrical current, respectively 1225 .
- step 1224 may be performed separately from step 1225 and is therefore optional.
- FIG. 13 illustrates schematically a computer/processor readable medium 1326 providing a computer program according to one embodiment.
- the computer program may comprise computer code configured to perform, control or enable one or more of the method steps 1122 - 1225 of FIG. 11 or 12 .
- the computer/processor readable medium 1326 is a disc such as a digital versatile disc (DVD) or a compact disc (CD).
- DVD digital versatile disc
- CD compact disc
- the computer/processor readable medium 1326 may be any medium that has been programmed in such a way as to carry out an inventive function.
- the computer/processor readable medium 1326 may be a removable memory device such as a memory stick or memory card (SD, mini SD, micro SD or nano SD).
- feature number 1 can also correspond to numbers 101 , 201 , 301 etc. These numbered features may appear in the figures but may not have been directly referred to within the description of these particular embodiments. These have still been provided in the figures to aid understanding of the further embodiments, particularly in relation to the features of similar earlier described embodiments.
- any mentioned apparatus/device and/or other features of particular mentioned apparatus/device may be provided by apparatus arranged such that they become configured to carry out the desired operations only when enabled, e.g. switched on, or the like. In such cases, they may not necessarily have the appropriate software loaded into the active memory in the non-enabled (e.g. switched off state) and only load the appropriate software in the enabled (e.g. on state).
- the apparatus may comprise hardware circuitry and/or firmware.
- the apparatus may comprise software loaded onto memory.
- Such software/computer programs may be recorded on the same memory/processor/functional units and/or on one or more memories/processors/functional units.
- a particular mentioned apparatus/device may be pre-programmed with the appropriate software to carry out desired operations, and wherein the appropriate software can be enabled for use by a user downloading a “key”, for example, to unlock/enable the software and its associated functionality.
- Advantages associated with such embodiments can include a reduced requirement to download data when further functionality is required for a device, and this can be useful in examples where a device is perceived to have sufficient capacity to store such pre-programmed software for functionality that may not be enabled by a user.
- any mentioned apparatus/circuitry/elements/processor may have other functions in addition to the mentioned functions, and that these functions may be performed by the same apparatus/circuitry/elements/processor.
- One or more disclosed aspects may encompass the electronic distribution of associated computer programs and computer programs (which may be source/transport encoded) recorded on an appropriate carrier (e.g. memory, signal).
- any “computer” described herein can comprise a collection of one or more individual processors/processing elements that may or may not be located on the same circuit board, or the same region/position of a circuit board or even the same device. In some embodiments one or more of any mentioned processors may be distributed over a plurality of devices. The same or different processor/processing elements may perform one or more functions described herein.
- signal may refer to one or more signals transmitted as a series of transmitted and/or received signals.
- the series of signals may comprise one, two, three, four or even more individual signal components or distinct signals to make up said signalling. Some or all of these individual signals may be transmitted/received simultaneously, in sequence, and/or such that they temporally overlap one another.
- processors and memory may comprise a computer processor, Application Specific Integrated Circuit (ASIC), field-programmable gate array (FPGA), and/or other hardware components that have been programmed in such a way to carry out the inventive function.
- ASIC Application Specific Integrated Circuit
- FPGA field-programmable gate array
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
-
- each photodetector of the photodetector pair comprising a channel member, respective source and drain electrodes configured to enable a flow of electrical current through the channel member between the source and drain electrodes, and a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation to produce a detectable change in the electrical current flowing through the channel member,
- wherein the apparatus is configured such that the first and second photodetectors of the photodetector pair generate electron-hole pairs which produce an increase and decrease in electrical current through the channel members respectively, the combined change in electrical current of the pair of first and second photodetectors being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation.
-
- the apparatus comprising at least one pair of first and second photodetectors,
- each photodetector of the photodetector pair comprising a channel member, respective source and drain electrodes configured to enable a flow of electrical current through the channel member between the source and drain electrodes, and a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation to produce a detectable change in the electrical current flowing through the channel member,
- wherein the apparatus is configured such that the first and second photodetectors of the photodetector pair generate electron-hole pairs which produce an increase and decrease in electrical current through the channel members respectively, the combined change in electrical current of the pair of first and second photodetectors being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation,
- the method comprising determining one or more of the presence and magnitude of electromagnetic radiation incident upon the apparatus based on the combined change in electrical current of the pair of first and second photodetectors as a result of the incident electromagnetic radiation.
-
- the apparatus comprising at least one pair of first and second photodetectors, each photodetector of the photodetector pair comprising a channel member, respective source and drain electrodes configured to enable a flow of electrical current through the channel member between the source and drain electrodes, and a plurality of quantum dots configured to generate electron-hole pairs on exposure to incident electromagnetic radiation to produce a detectable change in the electrical current flowing through the channel member,
- the method comprising configuring the apparatus such that the first and second photodetectors of the photodetector pair generate electron-hole pairs which produce an increase and decrease in electrical current through the channel members respectively, the combined change in electrical current of the pair of first and second photodetectors being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation.
Claims (16)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15196932 | 2015-11-30 | ||
EP15196932.6 | 2015-11-30 | ||
EP15196932.6A EP3174108B1 (en) | 2015-11-30 | 2015-11-30 | A quantum dot photodetector apparatus and associated methods |
PCT/EP2016/078730 WO2017093124A1 (en) | 2015-11-30 | 2016-11-24 | A quantum dot photodetector apparatus and associated methods |
Publications (2)
Publication Number | Publication Date |
---|---|
US20180337295A1 US20180337295A1 (en) | 2018-11-22 |
US10644176B2 true US10644176B2 (en) | 2020-05-05 |
Family
ID=54754498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/779,213 Active 2037-02-06 US10644176B2 (en) | 2015-11-30 | 2016-11-24 | Quantum dot photodetector apparatus and associated methods |
Country Status (7)
Country | Link |
---|---|
US (1) | US10644176B2 (en) |
EP (1) | EP3174108B1 (en) |
JP (1) | JP6667657B2 (en) |
KR (1) | KR102103707B1 (en) |
CA (1) | CA3005818C (en) |
ES (1) | ES2739176T3 (en) |
WO (1) | WO2017093124A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3163325B1 (en) * | 2015-10-28 | 2020-02-12 | Nokia Technologies Oy | An apparatus and associated methods for computed tomography |
EP3214656B1 (en) | 2016-03-04 | 2019-01-09 | Nokia Technologies Oy | A quantum dot photodetector apparatus and associated methods |
JP6887487B2 (en) * | 2017-03-10 | 2021-06-16 | 三菱電機株式会社 | Electromagnetic wave detector, electromagnetic wave detector array and electromagnetic wave detection method |
US10446699B2 (en) * | 2017-07-28 | 2019-10-15 | Cisco Technology, Inc. | Germanium photodetector with extended responsivity |
TWI791099B (en) * | 2018-03-29 | 2023-02-01 | 日商日本碍子股份有限公司 | Junction body and elastic wave element |
TWI787475B (en) * | 2018-03-29 | 2022-12-21 | 日商日本碍子股份有限公司 | Junction body and elastic wave element |
KR20210100408A (en) | 2020-02-06 | 2021-08-17 | 삼성전자주식회사 | Opto-electronic device having junction field-effect transistor structure and image sensor including the opto-electronic device |
CN111554770A (en) * | 2020-05-14 | 2020-08-18 | 中国科学院宁波材料技术与工程研究所 | Three-terminal thin film transistor, preparation method thereof and photosensitive neurosynaptic device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008214363A (en) | 2007-02-28 | 2008-09-18 | Canon Inc | Nanoparticle luminescent material, electroluminescent element using the same, ink composition and display apparatus |
WO2008131313A2 (en) | 2007-04-18 | 2008-10-30 | Invisage Technologies, Inc. | Materials systems and methods for optoelectronic devices |
WO2011037041A1 (en) | 2009-09-28 | 2011-03-31 | 株式会社 村田製作所 | Nanoparticle material and photoelectric conversion device |
US20110278541A1 (en) | 2010-05-17 | 2011-11-17 | University Of Washington Through Its Center For Commercialization | Color-selective quantum dot photodetectors |
WO2013021095A2 (en) | 2011-08-09 | 2013-02-14 | Nokia Corporation | An apparatus and associated methods |
US20140299741A1 (en) | 2013-04-05 | 2014-10-09 | Nokia Corporation | Transparent Photodetector for Mobile Devices |
US20190140060A1 (en) * | 2016-04-13 | 2019-05-09 | Nokia Technologies Oy | An apparatus and method comprising two dimensional material |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5616405B2 (en) * | 1973-10-25 | 1981-04-16 | ||
US9680038B2 (en) * | 2013-03-13 | 2017-06-13 | The Regents Of The University Of Michigan | Photodetectors based on double layer heterostructures |
-
2015
- 2015-11-30 ES ES15196932T patent/ES2739176T3/en active Active
- 2015-11-30 EP EP15196932.6A patent/EP3174108B1/en active Active
-
2016
- 2016-11-24 JP JP2018546752A patent/JP6667657B2/en active Active
- 2016-11-24 US US15/779,213 patent/US10644176B2/en active Active
- 2016-11-24 CA CA3005818A patent/CA3005818C/en active Active
- 2016-11-24 WO PCT/EP2016/078730 patent/WO2017093124A1/en active Application Filing
- 2016-11-24 KR KR1020187018642A patent/KR102103707B1/en active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008214363A (en) | 2007-02-28 | 2008-09-18 | Canon Inc | Nanoparticle luminescent material, electroluminescent element using the same, ink composition and display apparatus |
WO2008131313A2 (en) | 2007-04-18 | 2008-10-30 | Invisage Technologies, Inc. | Materials systems and methods for optoelectronic devices |
WO2011037041A1 (en) | 2009-09-28 | 2011-03-31 | 株式会社 村田製作所 | Nanoparticle material and photoelectric conversion device |
US20110278541A1 (en) | 2010-05-17 | 2011-11-17 | University Of Washington Through Its Center For Commercialization | Color-selective quantum dot photodetectors |
WO2013021095A2 (en) | 2011-08-09 | 2013-02-14 | Nokia Corporation | An apparatus and associated methods |
US20140299741A1 (en) | 2013-04-05 | 2014-10-09 | Nokia Corporation | Transparent Photodetector for Mobile Devices |
US20190140060A1 (en) * | 2016-04-13 | 2019-05-09 | Nokia Technologies Oy | An apparatus and method comprising two dimensional material |
Non-Patent Citations (2)
Title |
---|
European Search Report dated May 24, 2016 corresponding to European Patent Application No. 15 19 6932. |
International Search Report & Written Opinion dated Feb. 2, 2017 corresponding to International Patent Application No. PCT/EP2016/078730. |
Also Published As
Publication number | Publication date |
---|---|
CA3005818A1 (en) | 2017-06-08 |
ES2739176T3 (en) | 2020-01-29 |
KR20180090319A (en) | 2018-08-10 |
KR102103707B1 (en) | 2020-04-24 |
CA3005818C (en) | 2021-02-23 |
US20180337295A1 (en) | 2018-11-22 |
EP3174108B1 (en) | 2019-05-01 |
JP2018536298A (en) | 2018-12-06 |
JP6667657B2 (en) | 2020-03-18 |
WO2017093124A1 (en) | 2017-06-08 |
EP3174108A1 (en) | 2017-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10644176B2 (en) | Quantum dot photodetector apparatus and associated methods | |
KR102091343B1 (en) | Quantum dot photodetector device and associated method | |
US10483423B2 (en) | Quantum dot photodetector apparatus and associated methods | |
Fan et al. | Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry | |
US10367112B2 (en) | Device for direct X-ray detection | |
US10727361B2 (en) | Apparatus and associated methods for reducing noise in photodetectors | |
US10541348B2 (en) | Quantum dot photodetector apparatus and associated methods | |
Yasir et al. | Integration of antenna array and self-switching graphene diode for detection at 28 GHz | |
KR102056016B1 (en) | Radiation sensing device | |
US11393810B2 (en) | Array apparatus and associated methods | |
US8963265B1 (en) | Graphene based quantum detector device | |
US10944928B2 (en) | Array apparatus and associated methods | |
John et al. | Electronic properties and potential applications of the heterojunction between silicon and multi‐nanolayer amorphous selenium | |
Wu et al. | Responsivity enhanced NMOSFET photodetector fabricated by standard CMOS technology |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: EMBERION OY, FINLAND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KALLIOINEN, SAMI SEPPO ANTERO;VOUTILAINEN, MARTTI KALEVI;REEL/FRAME:045902/0306 Effective date: 20180523 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: SMAL); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY Year of fee payment: 4 |