US10082481B2 - Bio-sensor pixel circuit with amplification - Google Patents

Bio-sensor pixel circuit with amplification Download PDF

Info

Publication number
US10082481B2
US10082481B2 US15/204,359 US201615204359A US10082481B2 US 10082481 B2 US10082481 B2 US 10082481B2 US 201615204359 A US201615204359 A US 201615204359A US 10082481 B2 US10082481 B2 US 10082481B2
Authority
US
United States
Prior art keywords
gate
pixel circuit
transistor
sensing
readout
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US15/204,359
Other languages
English (en)
Other versions
US20180011053A1 (en
Inventor
Benjamin James Hadwen
Campbell Donald BROWN
Christopher James Brown
Gregory Gay
Sally Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Life Science EU Ltd
Original Assignee
Sharp Life Science EU Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US15/204,359 priority Critical patent/US10082481B2/en
Application filed by Sharp Life Science EU Ltd filed Critical Sharp Life Science EU Ltd
Assigned to SHARP KABUSHIKI KAISHA reassignment SHARP KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GAY, GREGORY, ANDERSON, SALLY, Brown, Campbell Donald, BROWN, CHRISTOPHER JAMES, HADWEN, BENJAMIN JAMES
Assigned to SHARP MICROFLUIDIC SOLUTIONS LIMITED reassignment SHARP MICROFLUIDIC SOLUTIONS LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHARP KABUSHIKI KAISHA
Assigned to SHARP LIFE SCIENCE (EU) LIMITED reassignment SHARP LIFE SCIENCE (EU) LIMITED CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SHARP MICROFLUIDIC SOLUTIONS LIMITED
Priority to EP17178846.6A priority patent/EP3267188B1/fr
Priority to CN201710554879.8A priority patent/CN107589165B/zh
Publication of US20180011053A1 publication Critical patent/US20180011053A1/en
Priority to US16/101,915 priority patent/US10571426B2/en
Publication of US10082481B2 publication Critical patent/US10082481B2/en
Application granted granted Critical
Assigned to SHARP LIFE SCIENCE (EU) LIMITED reassignment SHARP LIFE SCIENCE (EU) LIMITED CHANGE OF APPLICANT'S ADDRESS Assignors: SHARP LIFE SCIENCE (EU) LIMITED
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Definitions

  • US2005/0230271 discloses an active matrix array of floating gate ISFETs. Sensing is performed by detection of the threshold voltage of two ISFETs, one of which is coated with a sensing material. The difference signal between the two ISFETs is amplified to give the output signal.
  • FIG. 1 is a schematic diagram depicting a microfluidic device with a sensor array comprised of thin-film electronics on a substrate and the associated control electronics;
  • FIG. 4 is a schematic diagram depicting a dual-gate ISTFT sensor element with feedback according to a first embodiment of the invention
  • FIG. 9 is a schematic diagram depicting a pixel circuit for use in the sensor array of FIG. 2 according to a third embodiment of the invention.
  • the row select elements may include a row select transistor located between the current supply input and the feedback connection between the second gate and the drain terminal of the dual-gate TFT configured as a sensing element.
  • the row select elements may also include a row select transistor located between the current sink connection and the source terminal of a readout transistor configured as a readout device. Referring to FIG. 7 , this circuit is made suitable for use as a pixel circuit within an array such as that depicted in FIG. 2 by the addition of a readout transistor 60 and row select transistors 62 and 64 .
  • the pixel circuit further includes a feedback connection between the second gate and a drain connected to the first gate.
  • the sensor array may include a plurality of pixels disposed on a substrate, each pixel including a pixel circuit according to any of the embodiments, row and column driver circuits configured to generate signals that selectively address one or more of the plurality of pixels and for reading out voltages at the sensing electrodes of the addressed pixels, and control electronics configured to control the row and column driver circuits.

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
US15/204,359 2016-07-07 2016-07-07 Bio-sensor pixel circuit with amplification Active 2036-08-15 US10082481B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/204,359 US10082481B2 (en) 2016-07-07 2016-07-07 Bio-sensor pixel circuit with amplification
EP17178846.6A EP3267188B1 (fr) 2016-07-07 2017-06-29 Circuit de pixels à biocapteur avec amplification
CN201710554879.8A CN107589165B (zh) 2016-07-07 2017-07-07 具有放大的生物传感器像素电路
US16/101,915 US10571426B2 (en) 2016-07-07 2018-08-13 Bio-sensor pixel circuit with amplification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/204,359 US10082481B2 (en) 2016-07-07 2016-07-07 Bio-sensor pixel circuit with amplification

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/101,915 Division US10571426B2 (en) 2016-07-07 2018-08-13 Bio-sensor pixel circuit with amplification

Publications (2)

Publication Number Publication Date
US20180011053A1 US20180011053A1 (en) 2018-01-11
US10082481B2 true US10082481B2 (en) 2018-09-25

Family

ID=59276538

Family Applications (2)

Application Number Title Priority Date Filing Date
US15/204,359 Active 2036-08-15 US10082481B2 (en) 2016-07-07 2016-07-07 Bio-sensor pixel circuit with amplification
US16/101,915 Active 2036-09-24 US10571426B2 (en) 2016-07-07 2018-08-13 Bio-sensor pixel circuit with amplification

Family Applications After (1)

Application Number Title Priority Date Filing Date
US16/101,915 Active 2036-09-24 US10571426B2 (en) 2016-07-07 2018-08-13 Bio-sensor pixel circuit with amplification

Country Status (3)

Country Link
US (2) US10082481B2 (fr)
EP (1) EP3267188B1 (fr)
CN (1) CN107589165B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107764874B (zh) * 2016-08-15 2020-10-16 南京大学 一种新型主动噪声控制生物传感器
CN108227993B (zh) * 2018-01-04 2021-01-26 京东方科技集团股份有限公司 压电检测电路、阵列、触摸面板和方法
CN109061713B (zh) * 2018-08-08 2020-06-30 京东方科技集团股份有限公司 一种像素电路、阵列基板、x射线强度检测装置和方法
US10981168B2 (en) * 2018-12-03 2021-04-20 Sharp Life Science (Eu) Limited AM-EWOD array element circuitry with integrated sensing and method of sensing droplet merging
CN110084144A (zh) * 2019-04-08 2019-08-02 杭州士兰微电子股份有限公司 传感器组件及其像素电路和信号处理方法
CN110147718A (zh) * 2019-04-08 2019-08-20 杭州士兰微电子股份有限公司 传感器组件及其像素电路和信号处理方法
CN110460786B (zh) * 2019-08-09 2022-10-28 京东方科技集团股份有限公司 像素感应电路、第一偏置电压确定方法、电子设备
WO2023225516A2 (fr) * 2022-05-16 2023-11-23 Hememics Biotechnologies, Inc. Biocapteur multiplex pour diagnostics rapides de point de soins

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230271A1 (en) 2004-01-12 2005-10-20 Kalle Levon Floating gate field effect transistors for chemical and/or biological sensing
US20120176523A1 (en) * 2011-01-10 2012-07-12 Samsung Electronics Co., Ltd. Sense amplifier including negative capacitance circuit and apparatuses including same
US8247849B2 (en) 2010-06-30 2012-08-21 Life Technologies Corporation Two-transistor pixel array
US20130082936A1 (en) * 2011-09-29 2013-04-04 Sharp Kabushiki Kaisha Sensor array with high linearity
US8415716B2 (en) 2006-12-14 2013-04-09 Life Technologies Corporation Chemically sensitive sensors with feedback circuits
US20130200438A1 (en) 2011-10-31 2013-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for signal amplification with a dual-gate bio field effect transistor
US20140106494A1 (en) 2012-10-15 2014-04-17 International Business Machines Corporation Dual-gate bio/chem sensor
US20150330941A1 (en) 2014-05-13 2015-11-19 Arizona Board Of Regents On Behalf Of Arizona State University System and Method for Ion-Selective, Field Effect Transistor on Flexible Substrate
US20160313282A1 (en) * 2015-04-27 2016-10-27 Chan-Long Shieh Motft and array circuit for chemical/biochemical applications

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100301398A1 (en) * 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) * 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8653832B2 (en) * 2010-07-06 2014-02-18 Sharp Kabushiki Kaisha Array element circuit and active matrix device
WO2014197891A2 (fr) * 2013-06-07 2014-12-11 Cornell University Appareil capteur à base de grille flottante et applications d'appareil capteur à base de grille flottante apparentées
JP2017173976A (ja) * 2016-03-22 2017-09-28 株式会社ジャパンディスプレイ センサ及びセンサ付き表示装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230271A1 (en) 2004-01-12 2005-10-20 Kalle Levon Floating gate field effect transistors for chemical and/or biological sensing
US8415716B2 (en) 2006-12-14 2013-04-09 Life Technologies Corporation Chemically sensitive sensors with feedback circuits
US8247849B2 (en) 2010-06-30 2012-08-21 Life Technologies Corporation Two-transistor pixel array
US8741680B2 (en) 2010-06-30 2014-06-03 Life Technologies Corporation Two-transistor pixel array
US20120176523A1 (en) * 2011-01-10 2012-07-12 Samsung Electronics Co., Ltd. Sense amplifier including negative capacitance circuit and apparatuses including same
US20130082936A1 (en) * 2011-09-29 2013-04-04 Sharp Kabushiki Kaisha Sensor array with high linearity
US20130200438A1 (en) 2011-10-31 2013-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for signal amplification with a dual-gate bio field effect transistor
US20140106494A1 (en) 2012-10-15 2014-04-17 International Business Machines Corporation Dual-gate bio/chem sensor
US8940569B2 (en) 2012-10-15 2015-01-27 International Business Machines Corporation Dual-gate bio/chem sensor
US20150330941A1 (en) 2014-05-13 2015-11-19 Arizona Board Of Regents On Behalf Of Arizona State University System and Method for Ion-Selective, Field Effect Transistor on Flexible Substrate
US20160313282A1 (en) * 2015-04-27 2016-10-27 Chan-Long Shieh Motft and array circuit for chemical/biochemical applications

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
Chin Y-L et al., "A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process", Sensors and Actuators B Chemical. vol. 76, 2001, pp. 582-593.
Extended Search Report of EP Application No. 17178846.6 dated Nov. 7, 2017, 10 pages.
Go, J. et al., "Coupled Heterogeneous Nanowire-Nanoplate Planar Transistor Sensors for Giant (>10 V/pH) Nernst Response." ACS Nano, 6(7), 2012, pp. 5972-5979.
Guliga H. et al., "Extended gate field effect transistor (EGFET) integrated readout interfacing circuit for pH sensing", 2014 2nd International Conference on Electrical, Electronics and System Engineering (ICEESE), Dec. 9, 2014, pp. 11-14 (Abstract only).
Jang H-J. et al., "Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation", Sensors and Actuators B: Chemical vol. 181, May 2013, pp. 880-884 (Abstract only).
Lee IK et al., "A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen.", Nanoscale. Oct. 28, 2015;7(40):16789-97 (Abstract only).
Smith, J. et al., "Flexible ISFET Biosensor Using IGZO Metal Oxide TFTs and an ITO Sensing Layer", IEEE Sensors Journal. 14(4), Apr. 2014, pp. 937-938.

Also Published As

Publication number Publication date
CN107589165A (zh) 2018-01-16
EP3267188A1 (fr) 2018-01-10
US20190004009A1 (en) 2019-01-03
CN107589165B (zh) 2020-01-17
US20180011053A1 (en) 2018-01-11
EP3267188B1 (fr) 2021-03-03
US10571426B2 (en) 2020-02-25

Similar Documents

Publication Publication Date Title
US10571426B2 (en) Bio-sensor pixel circuit with amplification
EP2589084B1 (fr) Circuits à transistors pour la détection et la mesure de réactions chimiques et de composés
US11008611B2 (en) Double gate ion sensitive field effect transistor
US7662341B2 (en) Sensor arrangement and method for operating a sensor arrangement
US20210148856A1 (en) Dual gate biologically sensitive field effect transistor
US10078986B2 (en) Active matrix device and method of driving
JP5876044B2 (ja) 低濃度ドープドレインを有する化学的感応性センサ
US7084641B2 (en) Measuring cell and measuring field comprising measuring cells of this type, use of a measuring and use of a measuring field
US20060223170A1 (en) Biomolecule detecting apparatus and biomolecule detecting method employing the same
US20230408441A1 (en) Ion sensing device

Legal Events

Date Code Title Description
AS Assignment

Owner name: SHARP KABUSHIKI KAISHA, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HADWEN, BENJAMIN JAMES;BROWN, CAMPBELL DONALD;BROWN, CHRISTOPHER JAMES;AND OTHERS;SIGNING DATES FROM 20160630 TO 20160706;REEL/FRAME:039207/0646

AS Assignment

Owner name: SHARP MICROFLUIDIC SOLUTIONS LIMITED, UNITED KINGDOM

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SHARP KABUSHIKI KAISHA;REEL/FRAME:041967/0561

Effective date: 20170330

Owner name: SHARP MICROFLUIDIC SOLUTIONS LIMITED, UNITED KINGD

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SHARP KABUSHIKI KAISHA;REEL/FRAME:041967/0561

Effective date: 20170330

AS Assignment

Owner name: SHARP LIFE SCIENCE (EU) LIMITED, UNITED KINGDOM

Free format text: CHANGE OF NAME;ASSIGNOR:SHARP MICROFLUIDIC SOLUTIONS LIMITED;REEL/FRAME:042527/0075

Effective date: 20170520

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: SHARP LIFE SCIENCE (EU) LIMITED, UNITED KINGDOM

Free format text: CHANGE OF APPLICANT'S ADDRESS;ASSIGNOR:SHARP LIFE SCIENCE (EU) LIMITED;REEL/FRAME:058948/0187

Effective date: 20220110

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4