Ужгородский Научно-Технологический Центр Материалов Оптических Носителей Информации Института Проблем Регистрации Информации Национальной Академии Наук Украины
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Application filed by Ужгородский Научно-Технологический Центр Материалов Оптических Носителей Информации Института Проблем Регистрации Информации Национальной Академии Наук УкраиныfiledCriticalУжгородский Научно-Технологический Центр Материалов Оптических Носителей Информации Института Проблем Регистрации Информации Национальной Академии Наук Украины
Priority to UAA200911244ApriorityCriticalpatent/UA94010C2/en
Publication of UA94010C2publicationCriticalpatent/UA94010C2/en
The invention relates to material science and may be used in manufacturing technology of ferroelectric apparatus operating components. The object of the invention is lowering temperature of segnetoelectric material phase transition. The segnetoelectric material comprises crystalline tin tio-gypo-diphosphate and glass-like arsenic sulfide with following ratio of components, mass. %: of tin tiohypodiphosphate - 50, arsenic sulfide – the rest.
UAA200911244A2009-11-052009-11-05Segnetoelectric material
UA94010C2
(en)
Stainless steel substrate for solar battery having excellent insulation properties and small thermal expansion coefficient, and process for producing same