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Application filed by Дмитрий Иванович Блецкан, Ярослав Михайлович ПекарьfiledCriticalДмитрий Иванович Блецкан
Priority to UAA200711837ApriorityCriticalpatent/UA86317C2/en
Publication of UA86317C2publicationCriticalpatent/UA86317C2/en
The invention relates to the technology of growth of sapphire monocrystals by direct crystallization of smelt with modificatorymethod. A device for fixing inoculating crystal in plant for growth of sapphire monocrystals comprises inoculant holder is made of refractory material, with landing place for inoculant holder crystal in its case, chuck for connection of inoculant holder with mechanism of rotation and moving of crystal, and is characterized by that the case of inoculant holder in the bottom part comprises fluidized groove of rectangular section on half or two thirds of height of inoculant holder, which width decreases from top to down, at that the bottom part of the case is made as blunted cone. The construction of the device allows increasing of fixing reliability of inoculating crystal, simplifies of fixing process, provides of coaxiality of inoculating crystal with rod for moving and rotation and vertical axis crystalization unit of plant for growth of crystals.
UAA200711837A2007-10-262007-10-26Method for fixing of inoculating crystal
UA86317C2
(en)
Production of semiconductor crystal by floating zone method, comprises melting semiconductor raw material, binding the material at seed crystal, growing semiconductor material on the crystallized side and stopping the supply of material
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL BY USING THE PRODUCTION APPARATUS AND CRUCIBLE USED IN THE PRODUCTION APPARATUS