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Application filed by Cherkasy State Tech UnivfiledCriticalCherkasy State Tech Univ
Priority to UA2003109132ApriorityCriticalpatent/UA67516A/en
Publication of UA67516ApublicationCriticalpatent/UA67516A/en
A method for the revelation of the defective near-surface layer of optical glass involving preliminary warming-up of the sample to 400...520 DEGREE c, irradiation of the sample with electron flow and movement thereof along the sample surface at a rate of 0.1...50 cm/c. According to the invention, the specific power at which the sample is loaded by an electronic flow is of , and the sample is subjected to a subsequent etching for about 10 minutes in the solution of fluorine-hydrogen acid in glycerin at a ratio of 1:9.
UA2003109132A2003-10-092003-10-09A method for the revelation of the defective near-surface layer
UA67516A
(en)
Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition