UA49990U - Gunn diode from indium phosphide - Google Patents
Gunn diode from indium phosphideInfo
- Publication number
- UA49990U UA49990U UAU200910362U UAU200910362U UA49990U UA 49990 U UA49990 U UA 49990U UA U200910362 U UAU200910362 U UA U200910362U UA U200910362 U UAU200910362 U UA U200910362U UA 49990 U UA49990 U UA 49990U
- Authority
- UA
- Ukraine
- Prior art keywords
- indium phosphide
- epitaxial structure
- gunn diode
- layers
- layer
- Prior art date
Links
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title abstract 3
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 abstract 1
- 229910033181 TiB2 Inorganic materials 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
A Gunn diode comprises epitaxial structure n++- n+- n, linear contacts with contacting connection layers are performed in n++ and n sides, between which titanium diboride and zirconium boresight antidiffusion layers are formed. The whole epitaxial structure is axisymmetrically placed and fixed in a dielectric ring housing, wherein on upper and low surfaces metallizing are performed, using the said metallization and a flexible flat conductor electric terminal to n++ side is made, to n-side – with help of an intermediate layer of a heatsink. The epitaxial structure is made of indium phosphide, n+ layer is made of porous indium phosphide of definite thickness d=8-10 mkm and required conductivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU200910362U UA49990U (en) | 2009-10-13 | 2009-10-13 | Gunn diode from indium phosphide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU200910362U UA49990U (en) | 2009-10-13 | 2009-10-13 | Gunn diode from indium phosphide |
Publications (1)
Publication Number | Publication Date |
---|---|
UA49990U true UA49990U (en) | 2010-05-25 |
Family
ID=50689369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAU200910362U UA49990U (en) | 2009-10-13 | 2009-10-13 | Gunn diode from indium phosphide |
Country Status (1)
Country | Link |
---|---|
UA (1) | UA49990U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2456715C1 (en) * | 2011-04-01 | 2012-07-20 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Gunn diode |
-
2009
- 2009-10-13 UA UAU200910362U patent/UA49990U/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2456715C1 (en) * | 2011-04-01 | 2012-07-20 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Gunn diode |
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