UA49990U - Gunn diode from indium phosphide - Google Patents

Gunn diode from indium phosphide

Info

Publication number
UA49990U
UA49990U UAU200910362U UAU200910362U UA49990U UA 49990 U UA49990 U UA 49990U UA U200910362 U UAU200910362 U UA U200910362U UA U200910362 U UAU200910362 U UA U200910362U UA 49990 U UA49990 U UA 49990U
Authority
UA
Ukraine
Prior art keywords
indium phosphide
epitaxial structure
gunn diode
layers
layer
Prior art date
Application number
UAU200910362U
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Александр Евгеньевич Беляев
Раиса Васильевна Конакова
Ярослав Ярославович Кудрик
Виктор Владимирович Миленин
Георгий Никитович Веремийченко
Виктор Михайлович Ковтонюк
Владимир Николаевич Иванов
Илья Сергеевич Тарасов
Иван Никитич Арентьев
Александр Васильевич Бобиль
Original Assignee
Государственное Предприятие Научно-Исследовательский Институт "Орион"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственное Предприятие Научно-Исследовательский Институт "Орион" filed Critical Государственное Предприятие Научно-Исследовательский Институт "Орион"
Priority to UAU200910362U priority Critical patent/UA49990U/en
Publication of UA49990U publication Critical patent/UA49990U/en

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Abstract

A Gunn diode comprises epitaxial structure n++- n+- n, linear contacts with contacting connection layers are performed in n++ and n sides, between which titanium diboride and zirconium boresight antidiffusion layers are formed. The whole epitaxial structure is axisymmetrically placed and fixed in a dielectric ring housing, wherein on upper and low surfaces metallizing are performed, using the said metallization and a flexible flat conductor electric terminal to n++ side is made, to n-side – with help of an intermediate layer of a heatsink. The epitaxial structure is made of indium phosphide, n+ layer is made of porous indium phosphide of definite thickness d=8-10 mkm and required conductivity.
UAU200910362U 2009-10-13 2009-10-13 Gunn diode from indium phosphide UA49990U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU200910362U UA49990U (en) 2009-10-13 2009-10-13 Gunn diode from indium phosphide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU200910362U UA49990U (en) 2009-10-13 2009-10-13 Gunn diode from indium phosphide

Publications (1)

Publication Number Publication Date
UA49990U true UA49990U (en) 2010-05-25

Family

ID=50689369

Family Applications (1)

Application Number Title Priority Date Filing Date
UAU200910362U UA49990U (en) 2009-10-13 2009-10-13 Gunn diode from indium phosphide

Country Status (1)

Country Link
UA (1) UA49990U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2456715C1 (en) * 2011-04-01 2012-07-20 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Gunn diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2456715C1 (en) * 2011-04-01 2012-07-20 Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") Gunn diode

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