UA46501U - Microelectronic device for determination of diffusion length of minor carriers in semiconductors - Google Patents

Microelectronic device for determination of diffusion length of minor carriers in semiconductors

Info

Publication number
UA46501U
UA46501U UAU200906799U UAU200906799U UA46501U UA 46501 U UA46501 U UA 46501U UA U200906799 U UAU200906799 U UA U200906799U UA U200906799 U UAU200906799 U UA U200906799U UA 46501 U UA46501 U UA 46501U
Authority
UA
Ukraine
Prior art keywords
field
effect transistor
resistor
lead
voltage source
Prior art date
Application number
UAU200906799U
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Юрий Степанович Кравченко
Владимир Степанович Осадчук
Александр Владимирович Осадчук
Максим Николаевич Плахотнюк
Original Assignee
Винницкий Национальный Технический Университет
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Винницкий Национальный Технический Университет filed Critical Винницкий Национальный Технический Университет
Priority to UAU200906799U priority Critical patent/UA46501U/en
Publication of UA46501U publication Critical patent/UA46501U/en

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention proposes a microelectronic device intended for determination of diffusion length of minor carriers in semiconductors, in which a signal processing and indication unit, a microelectronic frequency converter including a first and second resistors, a first and second field-effect transistors, an inductance, a capacitor and a first and second DC voltage source are incorporated. A first pole the first DC voltage source is connected to gate of the first field-effect transistor, source of which is connected to first lead of the inductance, to upper contact of the first resistor and to gate of the second field-effect transistor, to which a first output terminal of the microelectronic frequency converter circuit is connected, drain of the first field-effect transistor is connected to drain of the second field-effect transistor, to low contact of the first resistor and to upper contact of the second resistor, second lead of the inductance is connected to first lead of the capacitor and to the first pole of the second DC voltage source. A second pole is connected to second lead of the capacitor and to second terminal of the first DC voltage source, source of second field-effect transistor and to low contact of a second resistor which form a common bus to which second output terminal of the device is connected, to output terminals the signal processing and indication unit is connected..
UAU200906799U 2009-06-30 2009-06-30 Microelectronic device for determination of diffusion length of minor carriers in semiconductors UA46501U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU200906799U UA46501U (en) 2009-06-30 2009-06-30 Microelectronic device for determination of diffusion length of minor carriers in semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU200906799U UA46501U (en) 2009-06-30 2009-06-30 Microelectronic device for determination of diffusion length of minor carriers in semiconductors

Publications (1)

Publication Number Publication Date
UA46501U true UA46501U (en) 2009-12-25

Family

ID=50639022

Family Applications (1)

Application Number Title Priority Date Filing Date
UAU200906799U UA46501U (en) 2009-06-30 2009-06-30 Microelectronic device for determination of diffusion length of minor carriers in semiconductors

Country Status (1)

Country Link
UA (1) UA46501U (en)

Similar Documents

Publication Publication Date Title
WO2013052833A3 (en) High power semiconductor electronic components with increased reliability
WO2008039549A3 (en) Symmetric blocking transient voltage suppressor (tvs) using bipolar transistor base snatch
TW200943529A (en) Integration of a sense FET into a discrete power MOSFET
JP2013033228A5 (en)
WO2014014939A3 (en) Semiconductor electronic components with integrated current limiters
WO2011085260A3 (en) Electronic devices and components for high efficiency power circuits
EP1885066A3 (en) Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same
WO2010039463A3 (en) Inductive load power switching circuits
EP2363885A3 (en) Efficient high voltage switching circuits and monolithic integration of same
TW201612887A (en) Liquid crystal display device and electronic device including the same
JP2011142621A5 (en) Semiconductor device
TW200723691A (en) Semiconductor integrated circuit apparatus and electronic apparatus
JP2013168210A5 (en) Semiconductor device, display device and electronic device
WO2010151604A3 (en) Methods for fabricating passivated silicon nanowires and devices thus obtained
JP2011028237A5 (en) Display device
JP2011205882A5 (en) Semiconductor device and wireless communication device
JP2016212944A5 (en) Semiconductor device and electronic component
JP2011238334A5 (en)
IN2012DN04871A (en)
JP2010193434A5 (en) Semiconductor device
TW200600997A (en) Voltage detection circuit
JP2011124560A5 (en)
JP2012239167A5 (en)
EA201001214A1 (en) ELECTRONIC SWITCH FOR DC CIRCUIT
JP2011059709A5 (en)