Національний Технічний Університет України "Київський Політехнічний Інститут"
Национальный Технический Университет Украины "Киевский Политехнический Институт"
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Priority to UA97125905ApriorityCriticalpatent/UA30026A/en
Publication of UA30026ApublicationCriticalpatent/UA30026A/en
A method for purification from admixtures and growing monocrystals of refractory materials comprises displacement of narrow zone of melt through long-length, solid, highly homogenous blank. Monocrystals are grown of porous pressings, formed of mixture of refractory material and admixtures solvent with melting temperature lower than melting temperature of refractory material. The melting process is performed in such a way that admixtures solvent moves in pore channels in front of blank melting front, recrystallizes taken separately particles of refractory material powder, dissolving the main mass of admixtures, activates compacting of refractory material to porousless state in melting front and is removed on porous channels of blank without getting to refractory material melt.
UA97125905A1997-12-091997-12-09A method for purification of admixtures and growing monocrystals of refractory materials
UA30026A
(en)