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Application filed by Ужгородский Национальный УниверситетfiledCriticalУжгородский Национальный Университет
Priority to UAU200712034UpriorityCriticalpatent/UA29879U/en
Publication of UA29879UpublicationCriticalpatent/UA29879U/en
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
Abstract
A method for growing monocrystals ofsapphire of α-AlOform by directional molten crystallization relates to the technology for monocrystals of refractory substances growing,in particular to growing of bulk monocrystals of sapphire – α-AlOof given form.
UAU200712034U2007-10-312007-10-31Method for growing monocrystals of sapphire (-al2o3) of given form by directional molten crystallization
UA29879U
(en)
Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by the process
Apparatus for producing sic single crystal by solution growth method, method for producing sic single crystal using apparatus for producing sic single crystal by solution growth method, and crucible used in apparatus for producing sic single crystal by solution growth method