UA115999U - ELECTRONIC RADIATION INSTALLATION FOR A FLAT SILICON INGOLD - Google Patents

Abstract

Installation for electron beam smelting and refining of silicon to obtain a flat ingot in a horizontal mold consists of a process chamber with a device placed in it for feeding the crude silicon, an intermediate tank, a horizontal mold, at least two guns of high-voltage incandescent discharge. The process chamber is divided by a vacuum partition into two zones, in the first of which there is a device for feeding crude silicon, an intermediate tank, and at least one low-vacuum gun VTR, and in the second - a horizontal mold and at least one medium vacuum gun. for the supply of refining gas.

Description

The useful model belongs to the field of special electrometallurgy, more specifically to the development of technological electron beam equipment for obtaining a flat ingot of silicon, including for the manufacture of solar batteries.

Known electron-beam installations for obtaining ingots-slabs, in which the formation of ingots is carried out in horizontal crystallizers under electron-beam heating, and the melt can be fed into them either by fusing the spent billet or by pouring it from a melting device, for example, an induction furnace (11.

The disadvantage of the known installations is the low efficiency of refining processing of the melt, which is limited only to evaporation from the surface in the crystallizer during the ingot formation process.

Also known is the installation for obtaining metal ingots, which consists of a vacuum chamber, a supply unit for remelting of compact or bulk material, a system of electron guns, an intermediate container and a horizontal crystallizer, which is installed on a cart that can move in the longitudinal direction, as well as a barrier , which is placed across the crystallizer and connected to the vertical movement mechanism (21.

The disadvantage of the installation remains the insufficient refining capacity, since, despite the presence of an intermediate container, the melting of the melt is realized starting with the fusion of the charge in this container and pouring it into the crystallizer, but this process is possible only when the pressure is set in the vacuum chamber, at which the operation of the electron guns is ensured .

There is also a well-known installation for electron-beam garnish melting in a crucible with electromagnetic stirring of the melt, chosen as a prototype, in which the melting chamber is divided into two zones by a special partition and in one of these zones a medium-vacuum high-voltage glow discharge gun is mounted, and in the other - a low-vacuum high-voltage gun smoldering discharge and this zone is equipped with a device for supplying refining gas (ZI.

The disadvantage of the installation is that the refining process is carried out at low and medium vacuum in the same crucible with melting of the melt through the hole in the bottom, which limits the possibilities of refining.

The basis of a useful model is the task of creating an electron beam installation, in the melting chamber of which there are zones for placing an intermediate container and a horizontal

From the crystallizer with heating, respectively, by low-vacuum and medium-vacuum high-voltage glow discharge guns.

The task is solved by the fact that in the installation for electron beam melting and refining of silicon with the production of a flat ingot in a horizontal crystallizer, which consists of a technological chamber with devices placed in it for feeding crude silicon to remelting, an intermediate tank, a horizontal crystallizer and at least two guns high-voltage glow discharge, according to a useful model, the technological chamber is divided by a vacuum partition into two zones, in the first of which there is a device for supplying raw silicon to remelting, an intermediate tank and at least one low-vacuum high-voltage glow discharge gun, and in the second - a horizontal crystallizer and at least one medium-vacuum high-voltage glow discharge gun, and the first zone is equipped with a device for supplying refining gas.

The essence of the useful model is explained by the drawing, which shows the diagram of the installation in section.

The technological chamber 1 of the installation is divided by a vacuum partition 2 into two zones A and B. In zone A there is a device C for feeding the blank 4 of crude silicon for remelting, an intermediate tank 5, a device for introducing refining gas b into zone A, and a low-vacuum gun VTR 7, which ensures the melting of the workpiece 4 and the heating of the melt in the container 5. The intermediate container 5 is water-cooled, and its discharge nozzle 8 ensures the melting of the melt into the horizontal crystallizer 9, which is located in zone B, which also houses the medium vacuum gun VTR 10, which ensures the heating of the melt in crystallizers 9.

The installation works as follows. After the preparation of the installation for melting and its sealing in zone A of the chamber 1, the low-vacuum gun of the VTR 7 begins to melt the raw silicon blank 4, and the resulting melt flows into the intermediate container 5. In the zone

And a pressure of at least 100 Pa is maintained by introducing refining gas into the atmosphere of zone A through device 6. This ensures the development of the refining process, for example, from boron, due to the formation of volatile compounds. The melt accumulated in the intermediate container 5 flows through the discharge nozzle 8 into zone B into the crystallizer 9, where it is heated by a medium-vacuum gun

VTR 10. In zone B, a pressure of about 1 Pa is maintained, which creates favorable conditions for the removal of impurities that evaporate easily, for example, aluminum. Along with refining, as a result of surface evaporation in the crystallizer 9, favorable conditions are created for the directional solidification of silicon due to the heating of the surface of the melt by the electron beam generated by the gun 10. Thus, the installation solves the task of both refining silicon and forming a flat ingot from it.

A probable field of application of the proposed installation may be the production of silicon ingots for the production of plates of photovoltaic solar energy converters, as well as flat ingots of other metals, for example, heat-resistant or titanium alloys.

Sources of information: 1. Paton B.E. Electron-beam melting / B.E. Paton, N.P. Trygub, D.A. Kozlytyn (and others) - K.:

Science opinion, 1997. -S. 244-255. 2. A.b. USSR Mo 302964, MKY C220 7/08. Publ. 15.06.1970. 3. Patent of Ukraine Mo 105577, IPC С21С 5/56, С228 9/04, СО1В 33/037. Publ. 05/26/2014.

Claims (1)

USEFUL MODEL FORMULA An installation for electron beam melting and refining of silicon with the production of a flat ingot in a horizontal crystallizer, consisting of a technological chamber with a device placed in it for feeding unrefined silicon to remelting, an intermediate tank, a horizontal crystallizer, at least two high-voltage glow discharge guns (VTR), which is distinguished by the fact that the technological chamber is divided by a vacuum partition into two zones, in the first of which there is a device for supplying unrefined silicon to the remelt, an intermediate container, and at least one low-vacuum VTR gun, and in the second - a horizontal crystallizer and at least one medium-vacuum VTR gun, and the first zone is equipped with a device for supplying refining gas. zhi Tenty KOVO ne pe he OK VNYM ZK: nya Soni ON i and THEH y and her -i Shen I KI TA NV yo kny MINE NN NO I A ZE NN o NI ME NE SCHE ry LY NA a s V NI NE SHE NK ШЩ шта ов or VIM,