UA103551U - A method of manufacturing barrier contacts to semiconductor compounds a3b5 type - Google Patents

A method of manufacturing barrier contacts to semiconductor compounds a3b5 type

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Publication number
UA103551U
UA103551U UAU201505137U UAU201505137U UA103551U UA 103551 U UA103551 U UA 103551U UA U201505137 U UAU201505137 U UA U201505137U UA U201505137 U UAU201505137 U UA U201505137U UA 103551 U UA103551 U UA 103551U
Authority
UA
Ukraine
Prior art keywords
semiconductor compounds
type
barrier contacts
manufacturing barrier
contact
Prior art date
Application number
UAU201505137U
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Oleksandr Yevgenovich Belyayev
Mikola Silovich Boltovets
Olegovich Vinogradov Anatoliy
Raisa Vasilivna Konakova
Yaroslav Kudric
Tamara Vasilivna Korostinska
Masood Ualiyevich Nasirov
Akumis Berisbaivna Ataubayeva
Original Assignee
V E Lashkarev Inst Of Semiconductor Physics Of Nat Academy Of Sciences Of Ukraine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V E Lashkarev Inst Of Semiconductor Physics Of Nat Academy Of Sciences Of Ukraine filed Critical V E Lashkarev Inst Of Semiconductor Physics Of Nat Academy Of Sciences Of Ukraine
Priority to UAU201505137U priority Critical patent/UA103551U/en
Publication of UA103551U publication Critical patent/UA103551U/en

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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Спосіб виготовлення бар'єрних контактів до напівпровідникових з'єднань типу АВвключає очищення поверхні підкладки напівпровідникового з'єднання типу АВ, магнетронне напилювання контактоутворюючого та зовнішнього контактного шарів і швидкий термічний відпал при температурі 450÷550 °C. Для створення контактоутворюючого шару здійснюють магнетронне напилювання квазіаморфної плівки ТіВтовщиною 50÷200 нм при струмі ~0,4 А і додатково проводять ненагрівну мікрохвильову обробку з частотою 2,45÷24 ГГц, емітансом 1,5÷7,5 Вт/см, протягом 1÷2 с.A method of manufacturing barrier contacts to AB-type semiconductor compounds involves cleaning the substrate surface of AB-type semiconductor compounds, magnetron sputtering of contact and external contact layers, and rapid thermal annealing at 450 ÷ 550 ° C. To create a contact-forming layer, magnetron sputtering of a quasiamorphic Ti film with a thickness of 50 ÷ 200 nm at a current of ~ 0.4 A is carried out and additionally conduct a non-heating microwave treatment with a frequency of 2.45 ÷ 24 GHz, emitting 1.5 ÷ 7.5 W / cm, for 1 С 2 sec.

UAU201505137U 2015-05-25 2015-05-25 A method of manufacturing barrier contacts to semiconductor compounds a3b5 type UA103551U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU201505137U UA103551U (en) 2015-05-25 2015-05-25 A method of manufacturing barrier contacts to semiconductor compounds a3b5 type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU201505137U UA103551U (en) 2015-05-25 2015-05-25 A method of manufacturing barrier contacts to semiconductor compounds a3b5 type

Publications (1)

Publication Number Publication Date
UA103551U true UA103551U (en) 2015-12-25

Family

ID=55172073

Family Applications (1)

Application Number Title Priority Date Filing Date
UAU201505137U UA103551U (en) 2015-05-25 2015-05-25 A method of manufacturing barrier contacts to semiconductor compounds a3b5 type

Country Status (1)

Country Link
UA (1) UA103551U (en)

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