TWM645518U - Domino circuit with nmos tree - Google Patents

Domino circuit with nmos tree Download PDF

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TWM645518U
TWM645518U TW112201357U TW112201357U TWM645518U TW M645518 U TWM645518 U TW M645518U TW 112201357 U TW112201357 U TW 112201357U TW 112201357 U TW112201357 U TW 112201357U TW M645518 U TWM645518 U TW M645518U
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pmos transistor
nmos
domino
circuit
supply voltage
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TW112201357U
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Chinese (zh)
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蕭明椿
陳暐軒
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修平學校財團法人修平科技大學
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Abstract

本創作提出一種新穎架構之具NMOS樹之骨牌式電路,其係由一控制電路(3)、以及複數個具NMOS樹之骨牌式基本閘所組成,其中,每一具NMOS樹之骨牌式基本閘係包括有一NMOS樹(1)、一第一PMOS電晶體(MP1)、一第一NMOS電晶體(MN1)、一保持電路(2)以及一時脈(clk),該保持電路(2)更包括有一反相器(INV)以及一第二PMOS電晶體(MP2),而該控制電路(3)包括有一第三PMOS電晶體(MP3)以及一第四PMOS電晶體(MP4)。該具NMOS樹之骨牌式電路於求值相位(Evaluation phase)時(此時該時脈為邏輯高電位),由於呈關閉狀態之該第一PMOS電晶體(MP1)之基底係連接至電位較該第一電源電壓(Vdd)為高之該第二電源電壓(Vdd2),根據電晶體之本體效應(Body effect),該第一PMOS電晶體(MP1)之臨界電壓的絕對值上升,因此流經該第一PMOS電晶體(MP1)之次臨界漏電流減少;再者,由於該第一PMOS電晶體(MP1)閘極所接受之該時脈(clk)的邏輯高電位(Logic high)為該第二電源電壓(Vdd2)之電位,因此可進一步降低次臨界漏電流,結果,本創作所提出之具NMOS樹之骨牌式電路可有效地減少功率消耗。此外,本創作藉由對NMOS樹之所有內部節點進行預充電至邏輯高電位,從而提供無電荷分享之具NMOS樹之骨牌式電路。 This invention proposes a novel architecture of a domino-type circuit with an NMOS tree, which is composed of a control circuit (3) and a plurality of domino-type basic gates with an NMOS tree, wherein each domino-type basic gate with an NMOS tree The gate system includes an NMOS tree (1), a first PMOS transistor (MP1), a first NMOS transistor (MN1), a holding circuit (2) and a clock (clk). The holding circuit (2) updates It includes an inverter (INV) and a second PMOS transistor (MP2), and the control circuit (3) includes a third PMOS transistor (MP3) and a fourth PMOS transistor (MP4). The domino circuit with the NMOS tree is in the evaluation phase (when the clock is at a logic high level), because the base of the first PMOS transistor (MP1) in the off state is connected to a higher potential. The first power supply voltage (Vdd) is the high second power supply voltage (Vdd2). According to the body effect of the transistor (Body effect), the absolute value of the critical voltage of the first PMOS transistor (MP1) increases, so the current The subcritical leakage current through the first PMOS transistor (MP1) is reduced; furthermore, because the logic high of the clock (clk) received by the gate of the first PMOS transistor (MP1) is The potential of the second power supply voltage (Vdd2) can therefore further reduce the sub-critical leakage current. As a result, the domino circuit with an NMOS tree proposed in this invention can effectively reduce power consumption. In addition, this invention provides a domino circuit with an NMOS tree without charge sharing by precharging all internal nodes of the NMOS tree to a logic high potential.

Description

具NMOS樹之骨牌式電路 Domino circuit with NMOS tree

本創作係有關一種具NMOS(N-channel Metal Oxide Semiconductor,N通道金屬氧化物半導體)樹之骨牌式電路(Domino circuit),尤指利用一控制電路、以及複數個具NMOS樹(NMOS tree)之骨牌式基本閘所組成以求獲得無電荷分享(Charge-sharing-free)且具低功率消耗之互補式金屬氧化物半導體(CMOS)邏輯電路。 This creation is related to a domino circuit with an NMOS (N-channel Metal Oxide Semiconductor, N-channel metal oxide semiconductor) tree, especially one that uses a control circuit and a plurality of NMOS trees. The domino-type basic gate is composed of complementary metal oxide semiconductor (CMOS) logic circuits with charge-sharing-free and low power consumption.

動態電路(Dynamic Circuits)是CMOS邏輯電路中很重要的一種電路,相較於靜態電路(Static Circuits),動態電路一般來說具有較省面積、較高操作速度、或較省功率等優點,因此其常用於許多高性能的電路中,例如高速CPU(中央處理器)及DSP(數位訊號處理器)晶片。 Dynamic circuits are a very important type of circuit in CMOS logic circuits. Compared with static circuits, dynamic circuits generally have the advantages of less area, higher operating speed, or less power. Therefore, It is commonly used in many high-performance circuits, such as high-speed CPU (Central Processing Unit) and DSP (Digital Signal Processor) chips.

具NMOS樹之骨牌式基本閘是一種CMOS動態電路,習知具NMOS樹之骨牌式基本閘如第1圖所示,其係由一NMOS樹(1)、一保持電路(2)、一PMOS電晶體(MP1)、一NMOS電晶體(MN1)以及一時脈(clk)所組成,該保持電路(2)包含一PMOS電晶體(MP2)及一反向器(INV),其中,該PMOS電晶體(MP2)之源極連接至電源電壓(Vdd),汲極連接至一第一內部節點(N1),閘極則連接至反相器(INV)之輸出端(OUT);該PMOS電晶體(MP1)之源極連接至電源電壓(Vdd),閘極用於 接受該時脈(clk),而汲極則連接至該第一內部節點(N1);該NMOS電晶體(MN1)之源極連接至參考接地,閘極用於接受該時脈(clk),而汲極則連接至一第二內部節點(N2);該NMOS樹(1)連接在該第一內部節點(N1)與該第二內部節點(N2)之間,並接受複數個邏輯輸入信號(IN1、IN2…INn),以便對該等邏輯輸入信號(IN1、IN2…INn)執行一邏輯運算,該邏輯運算之結果經該反相器(INV)後傳送至一輸出端(OUT),以便供輸出及/或做為下一級具NMOS樹之骨牌式基本閘的一邏輯輸入信號。 The domino-type basic gate with an NMOS tree is a CMOS dynamic circuit. The conventional domino-type basic gate with an NMOS tree is as shown in Figure 1. It consists of an NMOS tree (1), a holding circuit (2), and a PMOS It is composed of a transistor (MP1), an NMOS transistor (MN1) and a clock (clk). The holding circuit (2) includes a PMOS transistor (MP2) and an inverter (INV). The PMOS transistor (INV) The source of the crystal (MP2) is connected to the power supply voltage (Vdd), the drain is connected to a first internal node (N1), and the gate is connected to the output terminal (OUT) of the inverter (INV); the PMOS transistor The source of (MP1) is connected to the supply voltage (Vdd), and the gate is used to To receive the clock (clk), the drain is connected to the first internal node (N1); the source of the NMOS transistor (MN1) is connected to the reference ground, and the gate is used to receive the clock (clk), The drain is connected to a second internal node (N2); the NMOS tree (1) is connected between the first internal node (N1) and the second internal node (N2), and accepts a plurality of logic input signals (IN1, IN2...INn), in order to perform a logical operation on the logical input signals (IN1, IN2...INn), and the result of the logical operation is sent to an output terminal (OUT) through the inverter (INV), In order to provide output and/or as a logical input signal of the domino-type basic gate of the next level with NMOS tree.

第1圖所示之具NMOS樹之骨牌式基本閘有二個工作相位,第一個工作相位稱為預放電相位(Pre-discharge phase),顧名思意就是將具NMOS樹之骨牌式基本閘之輸出端(OUT)預先放電至邏輯低電位(Logic low),此時該時脈(clk)為邏輯低電位(Logic low),該PMOS電晶體(MP1)被導通而該NMOS電晶體(MN1)被關閉,所以輸出端(OUT)會透過該反相器(INV)而被放電至邏輯低電位;第二個工作相位稱為求值相位(Evaluation phase),此時該時脈(clk)為邏輯高電位(Logic high),該PMOS電晶體(MP1)被關閉而該NMOS電晶體(MN1)被導通,由於此時該NMOS電晶體(MN1)和該NMOS樹(1)串接,而該NMOS電晶體(MN1)又被導通,所以輸出端(OUT)的邏輯值會由該等邏輯輸入信號(IN1、IN2…INn)而決定,並完成原先應該完成的布林函數。 The domino-type basic gate with NMOS tree shown in Figure 1 has two working phases. The first working phase is called the pre-discharge phase. As the name implies, it is the domino-type basic gate with NMOS tree. The output terminal (OUT) is pre-discharged to a logic low level (Logic low). At this time, the clock (clk) is a logic low level (Logic low), the PMOS transistor (MP1) is turned on and the NMOS transistor (MN1) is turned off, so the output terminal (OUT) will be discharged to a logic low level through the inverter (INV); the second working phase is called the evaluation phase (Evaluation phase), and at this time the clock (clk) is Logic high, the PMOS transistor (MP1) is turned off and the NMOS transistor (MN1) is turned on, because at this time the NMOS transistor (MN1) and the NMOS tree (1) are connected in series, and the The NMOS transistor (MN1) is turned on again, so the logic value of the output terminal (OUT) will be determined by the logic input signals (IN1, IN2...INn), and the Bollinger function that should be completed originally is completed.

第1圖所示具NMOS樹之骨牌式基本閘並未考慮到於求值相位(Evaluation phase)時,由於該PMOS電晶體(MP1)被關閉而工作在次臨界區(Subthreshold region)之漏電流,因此仍有改良空間存在;再者,第1圖所示具NMOS樹之骨牌式基本閘並未對NMOS樹(1)之所有內部節點進行預充電至邏輯高電位,所以對於解決電荷分享問題仍稍嫌不足, 亦有改良空間存在。 The domino-type basic gate with the NMOS tree shown in Figure 1 does not take into account the leakage current due to the PMOS transistor (MP1) being turned off and operating in the subthreshold region during the evaluation phase. , so there is still room for improvement; furthermore, the domino-type basic gate with the NMOS tree shown in Figure 1 does not precharge all the internal nodes of the NMOS tree (1) to a logic high potential, so it is difficult to solve the charge sharing problem. Still a little inadequate, There is also room for improvement.

有鑑於此,本創作之主要目的係提出一種新穎架構之具NMOS樹之骨牌式電路,其可較先前之具NMOS樹之骨牌式基本閘具有更低之功率消耗。 In view of this, the main purpose of this invention is to propose a novel architecture of a domino circuit with an NMOS tree, which can have lower power consumption than the previous domino basic gate with an NMOS tree.

本創作之次要目的係提出一種一種新穎架構之具NMOS樹之骨牌式電路,其可藉由對NMOS樹之所有內部節點進行預充電至邏輯高電位,從而提供無電荷分享之具NMOS樹之骨牌式電路。 The secondary purpose of this creation is to propose a novel architecture of a domino circuit with an NMOS tree, which can provide an NMOS tree with no charge sharing by precharging all internal nodes of the NMOS tree to a logic high level. Domino circuit.

本創作提出一種新穎架構之具NMOS樹之骨牌式電路,其係由一控制電路(3)、以及複數個具NMOS樹之骨牌式基本閘所組成,其中,每一具NMOS樹之骨牌式基本閘係包括有一NMOS樹(1)、一第一PMOS電晶體(MP1)、一第一NMOS電晶體(MN1)、一保持電路(2)以及一時脈(clk),該保持電路(2)更包括有一反相器(INV)以及一第二PMOS電晶體(MP2),而該控制電路(3)包括有一第三PMOS電晶體(MP3)以及一第四PMOS電晶體(MP4)。該具NMOS樹之骨牌式電路於求值相位(Evaluation phase)時(此時該時脈為邏輯高電位),由於呈關閉狀態之該第一PMOS電晶體(MP1)之基底係連接至電位較該第一電源電壓(Vdd)為高之該第二電源電壓(Vdd2),根據電晶體之本體效應(Body effect),該第一PMOS電晶體(MP1)之臨界電壓的絕對值上升,因此流經該第一PMOS電晶體(MP1)之次臨界漏電流減少;再者,由於該第一PMOS電晶體(MP1)閘極所接受之該時脈(clk)的邏輯高電位(Logic high)為該第二電源電壓(Vdd2)之電位,因此可進一步降低次臨界漏電流,結果,本創作所提出之具 NMOS樹之骨牌式電路可有效地減少功率消耗。此外,本創作藉由對NMOS樹之所有內部節點進行預充電至邏輯高電位,從而提供無電荷分享之具NMOS樹之骨牌式電路。 This invention proposes a novel architecture of a domino-type circuit with an NMOS tree, which is composed of a control circuit (3) and a plurality of domino-type basic gates with an NMOS tree, wherein each domino-type basic gate with an NMOS tree The gate system includes an NMOS tree (1), a first PMOS transistor (MP1), a first NMOS transistor (MN1), a holding circuit (2) and a clock (clk). The holding circuit (2) updates It includes an inverter (INV) and a second PMOS transistor (MP2), and the control circuit (3) includes a third PMOS transistor (MP3) and a fourth PMOS transistor (MP4). The domino circuit with the NMOS tree is in the evaluation phase (when the clock is at a logic high level), because the base of the first PMOS transistor (MP1) in the off state is connected to a higher potential. The first power supply voltage (Vdd) is the high second power supply voltage (Vdd2). According to the body effect of the transistor (Body effect), the absolute value of the critical voltage of the first PMOS transistor (MP1) increases, so the current The subcritical leakage current through the first PMOS transistor (MP1) is reduced; furthermore, because the logic high of the clock (clk) received by the gate of the first PMOS transistor (MP1) is The potential of the second power supply voltage (Vdd2) can therefore further reduce the sub-critical leakage current. As a result, the method proposed in this invention The NMOS tree domino circuit can effectively reduce power consumption. In addition, this invention provides a domino circuit with an NMOS tree without charge sharing by precharging all internal nodes of the NMOS tree to a logic high potential.

1:NMOS樹 1: NMOS tree

2:保持電路 2: Hold circuit

3:控制電路 3:Control circuit

Vdd:第一電源電壓 Vdd: first power supply voltage

Vdd2:第二電源電壓 Vdd2: second power supply voltage

INV:反相器 INV: inverter

MP1:第一PMOS電晶體 MP1: The first PMOS transistor

MP2:第二PMOS電晶體 MP2: The second PMOS transistor

MP3:第三PMOS電晶體 MP3: The third PMOS transistor

MP4:第四PMOS電晶體 MP4: The fourth PMOS transistor

MN1:第一NMOS電晶體 MN1: The first NMOS transistor

N1:第一內部節點 N1: first internal node

N2:第二內部節點 N2: The second internal node

clk:時脈 clk: clock

/clk:反相時脈 /clk: inverted clock

IN1…INn:邏輯輸入信號 IN1…INn: logic input signal

Ni1…Nim:NMOS樹之內部節點 Ni1...Nim: internal node of NMOS tree

第1圖 係顯示一種習知具NMOS樹之骨牌式基本閘; Figure 1 shows a conventional domino-type basic gate with an NMOS tree;

第2圖 係顯示本創作較佳實施例之具NMOS樹之骨牌式電路。 Figure 2 shows a domino circuit with an NMOS tree according to a preferred embodiment of the present invention.

根據上述之目的,本創作提出一種具NMOS樹之骨牌式電路,如第2圖所示,為了便於說明起見,第2圖所示之電路僅以一控制電路(3)、以及一個具NMOS樹之骨牌式基本閘做為實施例來說明。 Based on the above purpose, this invention proposes a domino circuit with an NMOS tree, as shown in Figure 2. For the convenience of explanation, the circuit shown in Figure 2 only uses a control circuit (3) and an NMOS tree. The tree domino type basic gate is explained as an example.

如第2圖所示,該具NMOS樹之骨牌式電路係由一控制電路(3)、以及一具NMOS樹之骨牌式基本閘所組成,其中,該具NMOS樹之骨牌式基本閘係包括有一NMOS樹(1)、一第一PMOS電晶體(MP1)、一第一NMOS電晶體(MN1)、一保持電路(2)以及一時脈(clk),其中,該時脈(clk)之邏輯高電位(Logic high)為一第二電源電壓(Vdd2)之電位,而其邏輯低電位(Logic low)為參考接地之電位;該第一PMOS電晶體(MP1)之源極連接至第一電源電壓(Vdd),閘極用於接受該時脈(clk),而汲極則連接至一第一內部節點(N1);該第一NMOS電晶體(MN1)之源極連接至參考接地,閘極用於接受該時脈(clk),而汲極則連接至一第二內部節點(N2);該NMOS樹(1)連接在該第一內部節點(N1)與該第二內部節 點(N2)之間,並接受複數個邏輯輸入信號(IN1、IN2…INn),以便對該等邏輯輸入信號(IN1、IN2…INn)執行一邏輯運算,該邏輯運算之結果並經一反相器(INV)後傳送至一輸出端(OUT),供輸出或做為下一級具NMOS樹之骨牌式基本閘的一邏輯輸入信號。 As shown in Figure 2, the domino-type circuit with an NMOS tree is composed of a control circuit (3) and a domino-type basic gate with an NMOS tree, wherein the domino-type basic gate system with the NMOS tree includes There is an NMOS tree (1), a first PMOS transistor (MP1), a first NMOS transistor (MN1), a holding circuit (2) and a clock (clk), where the logic of the clock (clk) The high potential (Logic high) is the potential of a second power supply voltage (Vdd2), and its logic low potential (Logic low) is the potential of the reference ground; the source of the first PMOS transistor (MP1) is connected to the first power supply voltage (Vdd), the gate is used to receive the clock (clk), and the drain is connected to a first internal node (N1); the source of the first NMOS transistor (MN1) is connected to the reference ground, and the gate The pole is used to receive the clock (clk), and the drain pole is connected to a second internal node (N2); the NMOS tree (1) is connected between the first internal node (N1) and the second internal node. between points (N2), and accepts a plurality of logical input signals (IN1, IN2...INn) in order to perform a logical operation on these logical input signals (IN1, IN2...INn), and the result of the logical operation is inverted The phase detector (INV) is then sent to an output terminal (OUT) for output or as a logical input signal of the next stage domino-type basic gate with an NMOS tree.

請再參考第2圖,該保持電路(2)更包括有一反相器(INV)以及一第二PMOS電晶體(MP2),該反相器(INV)係連接在該第一內部節點(N1)與該輸出端(OUT)之間,而該第二PMOS電晶體(MP2)之汲極連接第一內部節點(N1),閘極連接至該輸出端(OUT),而源極則連接至一第一電壓源(Vdd)。該控制電路(3)包括有一第三PMOS電晶體(MP3)以及一第四PMOS電晶體(MP4),該第三PMOS電晶體(MP3)之源極連接至一第一電源電壓(Vdd),閘極用於接受該時脈(clk),而汲極則連接至該第一PMOS電晶體(MP1)之基底,而該第四PMOS電晶體(MP4)之源極連接至一第二電源電壓(Vdd2),閘極用於接受反相時脈(/clk),而汲極則連接至該第一PMOS電晶體(MP1)之基底,其中,該第二電源電壓(Vdd2)之電位係高於該第一電源電壓(Vdd)之電位。 Please refer to Figure 2 again. The holding circuit (2) further includes an inverter (INV) and a second PMOS transistor (MP2). The inverter (INV) is connected to the first internal node (N1 ) and the output terminal (OUT), and the drain of the second PMOS transistor (MP2) is connected to the first internal node (N1), the gate is connected to the output terminal (OUT), and the source is connected to a first voltage source (Vdd). The control circuit (3) includes a third PMOS transistor (MP3) and a fourth PMOS transistor (MP4). The source of the third PMOS transistor (MP3) is connected to a first power supply voltage (Vdd). The gate is used to receive the clock (clk), the drain is connected to the base of the first PMOS transistor (MP1), and the source of the fourth PMOS transistor (MP4) is connected to a second power supply voltage (Vdd2), the gate is used to receive the inverted clock pulse (/clk), and the drain is connected to the base of the first PMOS transistor (MP1), where the potential of the second power supply voltage (Vdd2) is high at the potential of the first power supply voltage (Vdd).

第2圖所示之具NMOS樹之骨牌式電路有二個工作相位,第一個工作相位為預放電相位(Pre-discharge phase),此時該時脈(clk)為參考接地之邏輯低電位(Logic low),該第一NMOS電晶體(MN1)被關閉而該第一PMOS電晶體(MP1)被導通,所以輸出端(OUT)會透過該反相器(INV)而放電至邏輯低電位;第二個工作相位為求值相位(Evaluation phase),此時該時脈(clk)為該第二電源電壓(Vdd2)之邏輯高電位(Logic high),該第一NMOS電晶體(MN1)被導通而該第一PMOS電晶體(MP1)被關閉,所以輸出端(OUT)的邏輯值會由該等邏輯輸入信 號(IN1、IN2…INn)而決定,並完成原先應該完成的布林函數。 The domino circuit with NMOS tree shown in Figure 2 has two working phases. The first working phase is the pre-discharge phase. At this time, the clock (clk) is the logic low potential of the reference ground. (Logic low), the first NMOS transistor (MN1) is turned off and the first PMOS transistor (MP1) is turned on, so the output terminal (OUT) will be discharged to a logic low level through the inverter (INV) ; The second working phase is the evaluation phase (Evaluation phase). At this time, the clock (clk) is the logic high of the second power supply voltage (Vdd2), and the first NMOS transistor (MN1) is turned on and the first PMOS transistor (MP1) is turned off, so the logic value of the output terminal (OUT) will be determined by the logic input signal (IN1, IN2...INn), and complete the Boolean function that should be completed originally.

此外,於求值相位時,由於該時脈(clk)為該第二電源電壓(Vdd2)之邏輯高電位,而反相時脈(/clk)為參考接地之邏輯低電位,因此該控制電路(3)中之該第三PMOS電晶體(MP3)被關閉,且該控制電路(3)中之該第四PMOS電晶體(MP4)被導通,於是該第一PMOS電晶體(MP1)之基底係連接至該第二電源電壓(Vdd2);而於預放電相位時,由於此時該時脈(clk)為參考接地之邏輯低電位,而該反相時脈(/clk)為該第二電源電壓(Vdd2)之邏輯高電位,因此該控制電路(3)中之該第三PMOS電晶體(MP3)被導通,且該控制電路(3)中之該第四PMOS電晶體(MP4)被關閉,於是該第一PMOS電晶體(MP1)之基底係連接至該第一電源電壓(Vdd)。 In addition, when evaluating the phase, since the clock (clk) is the logic high level of the second power supply voltage (Vdd2), and the inverting clock (/clk) is the logic low level of the reference ground, the control circuit The third PMOS transistor (MP3) in (3) is turned off, and the fourth PMOS transistor (MP4) in the control circuit (3) is turned on, so the substrate of the first PMOS transistor (MP1) is connected to the second power supply voltage (Vdd2); and in the pre-discharge phase, because the clock (clk) is the logic low potential of the reference ground at this time, and the inverted clock (/clk) is the second The power supply voltage (Vdd2) is at a logic high level, so the third PMOS transistor (MP3) in the control circuit (3) is turned on, and the fourth PMOS transistor (MP4) in the control circuit (3) is turned on. is turned off, so the base of the first PMOS transistor (MP1) is connected to the first supply voltage (Vdd).

接下來說明本創作如何減少功率消耗,首先比較第1圖所示之習知具NMOS樹之骨牌式基本閘與第2圖所示之本創作較佳實施例,由上述之分析可知,於預放電相位時(此時該時脈(clk)為邏輯低電位),本創作較佳實施例與第1圖所示之習知具NMOS樹之骨牌式基本閘具有相同的工作原理;而於求值相位時(此時該時脈(clk)為邏輯高電位),本創作較佳實施例之該第一PMOS電晶體(MP1)之基底係連接至電位較該第一電源電壓(Vdd)為高之該第二電源電壓(Vdd2),而第1圖所示之習知具NMOS樹之骨牌式基本閘的PMOS電晶體(MP1)之基底係連接至該第一電源電壓(Vdd),根據電晶體之本體效應(Body effect),本創作較佳實施例之該第一PMOS電晶體(MP1)之臨界電壓的絕對值會較第1圖所示之習知具NMOS樹之骨牌式基本閘的PMOS電晶體(MP1)之臨界電壓的絕對值為大,因此流經本創作較佳實施例之該第一PMOS電晶體(MP1)之 次臨界漏電流會較流經第1圖所示之習知具NMOS樹之骨牌式基本閘的PMOS電晶體(MP1)之次臨界漏電流更少,結果,本創作較佳實施例可降低次臨界漏電流。 Next, we will describe how this invention reduces power consumption. First, compare the conventional domino-type basic gate with an NMOS tree shown in Figure 1 and the preferred embodiment of this invention shown in Figure 2. From the above analysis, it can be seen that in advance During the discharge phase (when the clock (clk) is at a logic low level), the preferred embodiment of the present invention has the same working principle as the conventional domino-type basic gate with an NMOS tree shown in Figure 1; When the value phase is reached (the clock (clk) is at a logic high potential at this time), the substrate of the first PMOS transistor (MP1) in the preferred embodiment of the present invention is connected to a potential higher than the first power supply voltage (Vdd). The second power supply voltage (Vdd2) is high, and the base of the conventional PMOS transistor (MP1) with the domino-type basic gate of the NMOS tree shown in Figure 1 is connected to the first power supply voltage (Vdd), according to Due to the body effect of the transistor, the absolute value of the critical voltage of the first PMOS transistor (MP1) in the preferred embodiment of the present invention is larger than that of the conventional domino-type basic gate with an NMOS tree shown in Figure 1. The absolute value of the critical voltage of the PMOS transistor (MP1) is large, so the voltage flowing through the first PMOS transistor (MP1) of the preferred embodiment of the present invention The sub-critical leakage current will be less than the sub-critical leakage current flowing through the conventional PMOS transistor (MP1) with the domino-type basic gate of the NMOS tree shown in Figure 1. As a result, the preferred embodiment of the present invention can reduce the sub-critical leakage current. critical leakage current.

再者,由於本創作較佳實施例之該第一PMOS電晶體(MP1)閘極所接受之該時脈(clk)的邏輯高電位為該第二電源電壓(Vdd2)之電位,而第1圖所示之習知具NMOS樹之骨牌式基本閘的PMOS電晶體(MP1)閘極所接受之該時脈(clk)的邏輯高電位為該第一電源電壓(Vdd)之電位,亦即本創作較佳實施例之該第一PMOS電晶體(MP1)的閘源極電壓為該第二電源電壓(Vdd2)扣減該該第一電源電壓(Vdd)之電壓,其值為一正數,而第1圖所示之習知具NMOS樹之骨牌式基本閘的PMOS電晶體(MP1)之閘源極電壓為0伏特,根據美國專利公告第US6865119號專利案第3(A)及3(B)圖可知,對於PMOS電晶體而言,閘源極電壓為+0.1伏特時之次臨界漏電流約為閘源極電壓為0伏特時之次臨界漏電流的1%,因此本創作較佳實施例可更進一步降低次臨界漏電流。 Furthermore, because the logic high potential of the clock (clk) received by the gate of the first PMOS transistor (MP1) in the preferred embodiment of the present invention is the potential of the second power supply voltage (Vdd2), and the first The logic high potential of the clock (clk) received by the gate of the PMOS transistor (MP1) of the conventional domino-type basic gate of the NMOS tree shown in the figure is the potential of the first power supply voltage (Vdd), that is In the preferred embodiment of this invention, the gate-source voltage of the first PMOS transistor (MP1) is the voltage of the second power supply voltage (Vdd2) minus the first power supply voltage (Vdd), and its value is a positive number. The gate source voltage of the conventional PMOS transistor (MP1) with a domino-type basic gate of an NMOS tree shown in Figure 1 is 0 volts. According to US Patent No. 6865119 No. 3(A) and 3( Figure B) shows that for PMOS transistors, the sub-critical leakage current when the gate-source voltage is +0.1 volts is about 1% of the sub-critical leakage current when the gate-source voltage is 0 volts, so this invention is better Embodiments may further reduce sub-critical leakage current.

接著,討論該第二電源電壓(Vdd2)與該第一電源電壓(Vdd)之關係,既然該第二電源電壓(Vdd2)之電位較該第一電源電壓(Vdd)之電位為高,但為了避免產生閘極引發汲極洩漏(Gate Induced Drain Leakage,簡稱GIDL)電流,該第二電源電壓(Vdd2)之電位較該第一電源電壓(Vdd)之電位以不超過例如1伏特、0.8伏特或0.6伏特為限。 Next, the relationship between the second power supply voltage (Vdd2) and the first power supply voltage (Vdd) is discussed. Since the potential of the second power supply voltage (Vdd2) is higher than the potential of the first power supply voltage (Vdd), but in order to To avoid generating Gate Induced Drain Leakage (GIDL) current, the potential of the second power supply voltage (Vdd2) should be no more than, for example, 1 volt, 0.8 volt or more than the potential of the first power supply voltage (Vdd). 0.6 volt limit.

最後,討論本創作如何藉由對NMOS樹(1)之所有內部節點進行預充電至邏輯高電位,該第一PMOS電晶體(MP1)可設計成多汲極MOS電晶體(MD-MOS transistor),並藉由其中之另一汲極對NMOS樹(1)之所有內部節點(Ni1、Ni2…Nim)進行預充電至邏輯高電位,從而有效提供 無電荷分享之具NMOS樹之骨牌式電路。 Finally, discuss how this creation can be designed as a multi-drain MOS transistor (MD-MOS transistor) by precharging all internal nodes of the NMOS tree (1) to a logic high potential. , and precharges all internal nodes (Ni1, Ni2...Nim) of the NMOS tree (1) to a logic high potential through another drain electrode, thereby effectively providing Domino circuit with NMOS tree without charge sharing.

雖然本創作特別揭露並描述了所選之最佳實施例,但舉凡熟悉本技術之人士可明瞭任何形式或是細節上可能的變化均未脫離本創作的精神與範圍。因此,所有相關技術範疇內之改變都包括在本創作之申請專利範圍內。 Although the present invention specifically discloses and describes selected preferred embodiments, those familiar with the art will understand that any possible changes in form or details may be made without departing from the spirit and scope of the invention. Therefore, all changes within the relevant technical scope are included in the patentable scope of this creation.

【創作功效】 【Creative effect】

本創作提出一種之具NMOS樹之骨牌式電路,具有如下功效:(1)有效地減少功率消耗:由於呈關閉狀態之第一PMOS電晶體(MP1)之基底係連接至電位較第一電源電壓(Vdd)為高之第二電源電壓(Vdd2),且第一PMOS電晶體(MP1)閘極所接受之時脈(clk)的邏輯高電位(Logic high)為第二電源電壓(Vdd2)之電位,因此可有效地減少功率消耗;(2)無電荷分享問題:第一PMOS電晶體(MP1)可設計成多汲極MOS電晶體(MD-MOS transistor),並藉由其中之另一汲極對NMOS樹(1)之所有內部節點(Ni1、Ni2…Nim)進行預充電至邏輯高電位,從而有效地提供無電荷分享之具NMOS樹之骨牌式電路。 This invention proposes a domino circuit with an NMOS tree, which has the following effects: (1) Effectively reduce power consumption: because the base of the first PMOS transistor (MP1) in the off state is connected to a potential higher than the first power supply voltage (Vdd) is the high second power supply voltage (Vdd2), and the logic high potential (Logic high) of the clock pulse (clk) received by the gate of the first PMOS transistor (MP1) is the second power supply voltage (Vdd2) potential, so it can effectively reduce power consumption; (2) No charge sharing problem: the first PMOS transistor (MP1) can be designed as a multi-drain MOS transistor (MD-MOS transistor), and through another drain The pole precharges all internal nodes (Ni1, Ni2...Nim) of the NMOS tree (1) to a logic high potential, thereby effectively providing a domino circuit with an NMOS tree without charge sharing.

1:NMOS樹 1: NMOS tree

2:保持電路 2: Hold circuit

3:控制電路 3:Control circuit

Vdd:第一電源電壓 Vdd: first power supply voltage

Vdd2:第二電源電壓 Vdd2: second power supply voltage

INV:反相器 INV: inverter

MP1:第一PMOS電晶體 MP1: The first PMOS transistor

MP2:第二PMOS電晶體 MP2: The second PMOS transistor

MP3:第三PMOS電晶體 MP3: The third PMOS transistor

MP4:第四PMOS電晶體 MP4: The fourth PMOS transistor

MN1:第一NMOS電晶體 MN1: The first NMOS transistor

N1:第一內部節點 N1: first internal node

N2:第二內部節點 N2: The second internal node

clk:時脈 clk: clock

/clk:反相時脈 /clk: inverted clock

IN1…INn:邏輯輸入信號 IN1…INn: logic input signal

Ni1…Nim:NMOS樹之內部節點 Ni1...Nim: internal node of NMOS tree

Claims (5)

一種具NMOS樹之骨牌式電路,其包括:一控制電路(3)以及複數個具NMOS樹之骨牌式基本閘;每一具NMOS樹之骨牌式基本閘更包括有:一第一PMOS電晶體(MP1),其源極連接至一第一電源電壓(Vdd),閘極用於接受一時脈(clk),而汲極則連接至一第一內部節點(N1);一第一NMOS電晶體(MN1),其源極連接至參考接地,閘極用於接受該時脈(clk),而汲極則連接至一第二內部節點(N2);一NMOS樹(1),其連接在該第一內部節點(N1)與該第二內部節點(N2)之間,並接受複數個邏輯輸入信號(IN1、IN2、……INn),以便對該等邏輯輸入信號(IN1、IN2、……INn)執行一邏輯運算;一保持電路(2),供有效保持該具NMOS樹之骨牌式電路的輸出端(OUT)之信號不受電荷重新分佈、耦合雜訊、及/或漏電流等的影響;以及該時脈(clk),具有一第二電源電壓(Vdd2)之邏輯高電位與該參考接地之邏輯低電位;其中,該保持電路(2)更包括有:一反相器(INV),該反相器(INV)係連接在該第一內部節點(N1)與該具NMOS樹之骨牌式電路的該輸出端(OUT)之間;以及一第二PMOS電晶體(MP2),其汲極連接至該第一內部節點(N1),閘極連接至該具NMOS樹之骨牌式電路的該輸出端(OUT),而源極則連接至一第一電源電壓(Vdd);而該控制電路(3)則更包括有:一第三PMOS電晶體(MP3),該第三PMOS電晶體(MP3)之源極連接至該第一電源電壓(Vdd),閘極用於接受該時脈(clk),而汲極則連接至該第一PMOS電晶體(MP1)之一基底;以及一第四PMOS電晶體(MP4),該第四PMOS電晶體(MP4)之源極連接至該第二電源電壓(Vdd2),閘極用於接受一反相時脈(/clk),而汲極則連接至該第一PMOS電晶體(MP1)之該基底。 A domino-type circuit with an NMOS tree, which includes: a control circuit (3) and a plurality of domino-type basic gates with an NMOS tree; each domino-type basic gate with an NMOS tree further includes: a first PMOS transistor (MP1), its source is connected to a first power supply voltage (Vdd), the gate is used to receive a clock pulse (clk), and the drain is connected to a first internal node (N1); a first NMOS transistor (MN1), its source is connected to the reference ground, the gate is used to receive the clock (clk), and the drain is connected to a second internal node (N2); an NMOS tree (1), which is connected to the between the first internal node (N1) and the second internal node (N2), and accepts a plurality of logical input signals (IN1, IN2, ... INn) in order to process the logical input signals (IN1, IN2, ... INn) performs a logical operation; a holding circuit (2) for effectively keeping the signal at the output terminal (OUT) of the domino circuit with NMOS tree from charge redistribution, coupling noise, and/or leakage current, etc. influence; and the clock (clk) has a logic high potential of the second power supply voltage (Vdd2) and a logic low potential of the reference ground; wherein, the holding circuit (2) further includes: an inverter (INV ), the inverter (INV) is connected between the first internal node (N1) and the output terminal (OUT) of the domino circuit with an NMOS tree; and a second PMOS transistor (MP2), Its drain is connected to the first internal node (N1), its gate is connected to the output end (OUT) of the domino circuit with NMOS tree, and its source is connected to a first power supply voltage (Vdd); and The control circuit (3) further includes: a third PMOS transistor (MP3), the source of the third PMOS transistor (MP3) is connected to the first power supply voltage (Vdd), and the gate is used to receive the clock (clk), and the drain is connected to a substrate of the first PMOS transistor (MP1); and a fourth PMOS transistor (MP4), the source of the fourth PMOS transistor (MP4) is connected to The second power supply voltage (Vdd2), the gate is used to receive an inverted clock pulse (/clk), and the drain is connected to the substrate of the first PMOS transistor (MP1). 如申請專利範圍第1項所述之具NMOS樹之骨牌式電路,其中,該第二電源電壓(Vdd2)之電位係高於該第一電源電壓(Vdd)之電位。 For example, in the domino circuit with NMOS tree described in item 1 of the patent application, the potential of the second power supply voltage (Vdd2) is higher than the potential of the first power supply voltage (Vdd). 如申請專利範圍第1項所述之具NMOS樹之骨牌式電路,其中,該時脈(clk)於一預放電相位(Pre-discharge phase)期間,係為該參考接地之邏輯低電位。 For example, in the domino circuit with an NMOS tree described in item 1 of the patent application, the clock (clk) is the logic low potential of the reference ground during a pre-discharge phase. 如申請專利範圍第1項所述之具NMOS樹之骨牌式電路,其中,該時脈(clk)於一求值相位(Evaluation phase)期間,係為該第二電源電壓(Vdd2)之邏輯高電位。 The domino circuit with an NMOS tree as described in item 1 of the patent application, wherein the clock (clk) is the logic high of the second power supply voltage (Vdd2) during an evaluation phase (Evaluation phase). Potential. 如申請專利範圍第1項所述之具NMOS樹之骨牌式電路,該第一PMOS電晶體(MP1)設計成多汲極MOS電晶體(MD-MOS transistor),其中,該等多汲極中之一汲極連接至該第一內部節點(N1),另一汲極對該等NMOS樹之所有內部節點(Ni1、Ni2、……Nim)進行預充電至邏輯高電位,從而有效地提供無電荷分享(Charge-sharing-free)之該具NMOS樹之骨牌式電路。 For example, in the domino circuit with an NMOS tree described in item 1 of the patent application, the first PMOS transistor (MP1) is designed as a multi-drain MOS transistor (MD-MOS transistor), in which the multi-drain middle One of the drains is connected to the first internal node (N1), and the other drain precharges all the internal nodes (Ni1, Ni2,...Nim) of these NMOS trees to a logic high potential, thereby effectively providing a wireless Charge-sharing-free domino circuit with NMOS tree.
TW112201357U 2023-02-17 2023-02-17 Domino circuit with nmos tree TWM645518U (en)

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