TWM645220U - Shield structure for pvd - Google Patents

Abstract

A shield structure for physical vapor deposition (PVD) is proposed, and the shield structure includes a tubular shielding body, an annular connecting body and an annular supporting body, two of which are adjoined to each other with an E-beam welding layer. In this way, the shield structure can be easily manufactured and maintained, thereby facilitating cost reduction and environment protection.

Description

Masking structures for physical vapor deposition

The present invention relates to a shielding structure, particularly to a shielding structure used for physical vapor deposition of semiconductors.

For semiconductor manufacturing or optoelectronic component manufacturing such as LCD, OLED, LED, etc., physical vapor deposition (PVD) is a commonly used process. This physical vapor deposition is mainly used on wafers (substrates). A thin film of material is deposited to create a semiconductor device. Physical vapor deposition needs to be performed in a high vacuum chamber. The substrate is placed in the chamber, and the chamber also contains a solid target of the material to be deposited on the substrate. Gas ions strike the target to sputter target material, which is then transferred to the substrate where it is deposited as a thin film of material.

In addition, a shielding structure is placed in the chamber to surround the substrate to define the process area and prevent the sputtered target material from depositing on the inner wall of the chamber or other components in the chamber, causing the inner wall or Component contamination. After the manufacturing process, the shielding structure needs to be cleaned or cleaned to remove surface deposits, usually by sandblasting or other methods. During this cleaning or cleaning process, the cleaning or cleaning media may deform the shielding structure, causing its size or accuracy (such as true roundness) to gradually deviate from expected values. In addition, during the physical vapor deposition process, when the substrate is heated, the shielding structure will also be heated. This heating cycle will also gradually deform the shielding structure. Furthermore, in the case where the thickness of the shielding structure is thin, the shielding structure may break during cleaning or cleaning.

Therefore, once the shielding structure is deformed or cracked to the point that it does not meet the requirements, it must be replaced with a new one to ensure its performance. If the replacement time of the shielding structure is inadvertently delayed, the yield or throughput of physical vapor deposition may be affected.

However, the price of the shielding structure is high, and the larger the size, the higher the price. Therefore, replacing a new shielding structure is also a considerable burden for the semiconductor manufacturer.

In summary, how to reduce the replacement cost of shielding structures is the goal of practitioners in related technical fields.

The purpose of the present invention is to provide a shielding structure using physical vapor deposition, so that the shielding structure can be more easily manufactured and repaired, reducing replacement costs, and is also helpful for the production rate or productivity of the process.

In order to achieve the above purpose, in the first aspect of the present invention, a shielding structure for physical vapor deposition is proposed, which may include: a tubular shielding body, including a first upright part and an extension part, and the extension part extends from the first upright part. part extends outward; the annular connection body includes a second upright part and an inward extension part, the second upright part is provided under the first upright part, and the inward extension part extends inwardly from the second upright part Out, wherein the height of the second upright part is less than the height of the first upright part; the annular support body includes a transverse part and an upward extension part, and the transverse part is arranged within the inner extension part of the annular connecting body , and the extended portion extends upward from the lateral portion; and the electron beam welding layer, wherein between the first upright portion and the second upright portion, and/or between the inward portion and the lateral portion, It is hermetically joined by this electron beam welding layer.

In the second aspect of the present invention, the first upright portion and the second upright portion can be hermetically joined by an electron beam welding layer, and the inward portion and the transverse portion can be integrally formed.

In a third aspect of the present invention, the inward portion and the transverse portion can be hermetically joined by an electron beam welding layer, and the first upright portion and the second upright portion can be integrally formed.

In the fourth aspect of the present invention, two of the tubular shielding body, the annular connecting body and the annular supporting body can be made of different materials.

In the fifth aspect of the present invention, a shielding structure for physical vapor deposition is proposed, which may include: a used tubular shield, a used annular connector, a replacement annular support and an electron beam welding layer , wherein the replacement annular support body abuts the used annular connector, and the electron beam forms the electron beam welding layer between the replacement annular support body and the used annular connector , so that the two are sealingly joined.

In the sixth aspect of the present invention, the thickness of the replacement annular support body may be greater than the thickness of the used annular connecting body.

In the seventh aspect of the present invention, after the electron beam welding layer is formed, the replacement annular support body can be further ground to become thinner.

In the eighth aspect of the present invention, the replacement annular support body and the used annular connecting body can be made of different materials.

In the ninth aspect of the present invention, a shielding structure for physical vapor deposition is proposed, which may include a used tubular shield, a replacement annular connector, a replacement annular support and an electron beam welding layer, wherein , the replacement annular connector abuts the used tubular shield, and the electron beam forms the electron beam welding layer between the replacement annular connector and the used tubular shield, so that the two The two are sealingly joined.

In the tenth aspect of the present invention, the replacement annular support body and annular connecting body can be integrally formed.

In the eleventh aspect of the present invention, the thickness of the replacement annular support body and the annular connecting body may be greater than the thickness of the used tubular shielding body.

In the twelfth aspect of the present invention, after the electron beam welding layer is formed, the replacement annular support body and annular connecting body can be further ground to become thinner.

In the thirteenth aspect of the present invention, the replacement annular support body and annular connecting body can be made of materials different from the used tubular shielding body.

The objects, features and advantages disclosed herein will become more apparent to those of ordinary skill in the art from the description of the following embodiments and with reference to the drawings.

The following description is combined with the drawings to describe the embodiments of the present invention in detail. Unless the context clearly indicates otherwise, the embodiments described The technical features should not be understood as limitations of the present invention, and the following embodiments and the technical features in each embodiment can be combined with each other as long as there is no conflict. In addition, unless clearly stated otherwise, the singular form "a" used herein also includes the plural form (and the specific number is not limited), and the described orientation (such as front, back, up, down, one side, both sides, etc.) means It is a relative orientation, which can be defined according to the usage status of the present invention. It does not expressly or imply that the present invention requires a structure or operation in a specific direction, nor can it be understood as a restriction on the present invention. In addition, the terms "first", "second" and similar terms are mainly used to distinguish one feature (component, structure, surface, etc.) from another feature and do not imply priority or superiority.

Please refer to FIG. 1 . According to a preferred embodiment of the present invention, a shield structure 10 for physical vapor deposition is proposed, which is disposed in a physical vapor deposition device 20 . The physical vapor deposition device 20 may be any type or commercially available physical vapor deposition device or equipment, and is not limited thereto. In addition to the shielding structure 10 , the physical vapor deposition device 20 may also include a chamber 21 , a base 22 , a cover ring 23 , a target 24 , etc. The shielding structure 10, the base 22, the cover ring 23 and the target 24 are all disposed in the chamber 21. The shielding structure 10 is disposed on the base 22 to be supported by the base 22. The shielding structure 10 is also located below the target 24. The cover ring 23 is disposed within the shielding structure 10 and can contact the annular structure 12 included in the shielding structure 10 described later. Optionally, the base 22 is a vertically movable lifting base and may also include a heating element.

The physical vapor deposition device 20 can also include an inner shielding structure (not shown in the figure). The inner shielding structure is disposed within the shielding structure 10, so the shielding structure The structure 10 may also be called an outer shield structure (or outer shield) at this time.

The substrate 30 (wafer) to be subjected to the physical vapor deposition process may be placed in the chamber 21 of the physical vapor deposition apparatus 20 and under the cover ring 23 . Material from target 24 may be deposited on substrate 30, and optionally, substrate 30 may be heated by base 22. The shielding structure 10 can define a deposition area of the substrate 30 and protect the chamber 21 from being affected by the material of the target 24 .

Please refer to FIGS. 2 to 4 . As for the shielding structure 10 itself, it is mainly formed in a circular symmetry around an axis 10A. According to the structure or appearance, the shielding structure 10 can include (divided into): a tubular shielding The body 11, an annular connecting body 12 and an annular supporting body 13 are described in sequence as follows.

The tubular shielding body 11 is mainly used to shield and block the material from the target 24 , and its volume is relatively larger than the annular connecting body 12 and the annular supporting body 13 . The tubular shielding body 11 may include a first upright part 111 and an extension part 112. The extension part 112 extends outward from the first upright part 111 (formed integrally), that is, is integrally formed outward from the upper edge 111A of the first upright part 111. The ground extends out. More specifically, the first upright portion 111 does not need to be completely vertical (that is, parallel to the axis 10A), and can be slightly inclined, but the angle with the axis 10A does not exceed, for example, 5 degrees, 10 degrees, 15 degrees, etc. The extension portion 112 extends outward relative to the axis 10A, and may be horizontal or slightly inclined relative to the horizontal plane. Optionally, the tubular shielding body 11 may also include one or a plurality of through holes 113 and/or through parts 114 for placement of other components or for air extraction.

The annular connector 12 is mainly used to connect the tubular shielding body 11 and the annular support 13 therein. The annular connector 12 may include a second The upright part 121 and an inwardly extending part 122, the second upright part 121 is disposed under the first upright part 111 (that is, disposed at the lower edge 111B of the first upright part 111), and the inwardly extending part 122 extends from the second upright part 121 Extending inwardly (integrally formed), that is, extending inwardly and integrally from the lower edge 121B of the second upright portion 121 . More specifically, the upper edge 121A of the second upright part 121 is joined to the lower edge 111B of the first upright part 111 (the horizontal dotted line shown in FIG. 4 represents the connection between the second upright part 121 and the first upright part 111 (that is, where the upper edge 121A and the lower edge 111B are), and in this embodiment, the annular connecting body 12 (the second upright part 121) and the tubular shielding body 11 (the first upright part 111) can be They are integrally formed (made of the same metal material), so the upper edge 121A of the second upright part 121 and the lower edge 111B of the first upright part 111 are continuous. In addition, the height of the second upright portion 121 (dimension from the upper edge 121A to the lower edge 121B) is smaller than the height of the first upright portion 111 (dimension from the upper edge 111A to the lower edge 111B).

The inward extension 122 extends inwardly relative to the axis 10A, and may be horizontal or slightly inclined relative to the horizontal plane. Furthermore, the inner extension portion 122 may include a rounded corner section close to the second upright portion 121 .

The ring-shaped support body 13 is mainly used to support the cover ring 23 or the substrate 30 , and can also be used to shield and block the material from the target 24 . The annular support body 13 may include a transverse part 131 and an upward extension part 132, and the transverse part 131 is disposed within the inwardly extending part 122 of the annular connecting body 12 (that is, disposed at the inner edge 122A of the inwardly extending part 122), And the upward extending portion 132 extends upward (integratedly formed), that is, extends upward integrally from the inner edge 131A of the transverse portion 131 . More specifically, in the same extending manner as the inwardly extending portion 122 , the transverse portion 131 also extends inwardly (horizontally or slightly inclined) relative to the axis 10A, and its outer edge 131B is joined to the inner edge 122A of the inwardly extending portion 122 . The extended portion 132 extends upward relative to the axis 10A, and may be vertical or inclined relative to the axis 10A.

In this embodiment, the transverse portion 131 and the inward portion 122 are not integrally formed, but are produced separately. That is, the tubular shielding body 11 and the annular connecting body 12 are integrally formed, but the annular supporting body 13 is Separately produced and formed. Therefore, the tubular shielding body 11 and the annular connector 12 can be made of the same material (such as aluminum), while the annular support body 13 can be made of different materials (such as stainless steel with better strength and corrosion resistance); of course, the annular support body 13 can be made of different materials (such as stainless steel with better strength and corrosion resistance). 13The same material (such as aluminum) can also be used.

Then, the inner extension portion 122 of the annular connecting body 12 and the transverse portion 131 of the annular supporting body 13 are sealed and joined by an electron beam welding layer 14 . Specifically, as shown in FIG. 5 , the electron beam welding layer 14 is formed by an electron beam welding (E-beam welding) machine. The inner edge 122A of the inward extension 122 abuts against the outer edge 131B of the transverse portion 131 (the two are maintained abutted by a clamp), and then the two are placed in the vacuum chamber of the electron beam welding machine (not shown in the figure) within. The electron beam EB will be generated in the vacuum chamber, so that the electron beam EB is aligned with the interface between the inner edge 122A and the outer edge 131B, and melts the inner edge 122A and the outer edge 131B at high temperature, thereby forming a gap between the inner edge 122A and the outer edge 131B. Form a bead. Furthermore, the inward portion 122 and the transverse portion 131 are rotated 360 degrees (around the axis 10A) so that the weld beads are continuously formed in a circle. In this way, an electron beam welding layer 14 (or simply a welding layer) is formed between the inner edge 122A of the inwardly extending portion 122 and the outer edge 131B of the transverse portion 131 , so that the inwardly extending portion 122 and the transverse portion 131 are hermetically joined. In addition, the electron beam welding layer 14 can be formed vertically/or obliquely, because the inner edge 122A and the outer edge 131B may be vertical surfaces or inclined surfaces.

Thereby, the sealing performance between the inward portion 122 and the lateral portion 131 is substantially the same as that obtained by integral molding, so the material of the target 24 is difficult to leak from between the inward portion 122 and the lateral portion 131 . In addition, in addition to quickly forming the electron beam welding layer 14 through electron beam welding, the formed electron beam welding layer 14 is thin and deep, which means that the electron beam welding layer 14 has little thermal impact on the inward portion 122 and the transverse portion 131 (such as less distortion) and high joint strength.

Since the annular support body 13 does not need to be made from the same, single metal block together with the tubular shielding body 11 and the annular connecting body 12, the entire manufacturing process of the shielding structure 10 is easier and the manufacturing cost is correspondingly less. The quality is also better (for example, the roundness of the ring-shaped support body 13 is good), etc.

Please refer to Figure 6. According to a preferred embodiment of the present invention, another shielding structure 10' for physical vapor deposition is proposed. The technical contents of the shielding structure 10 in the previous embodiments can be referenced to each other, so they are the same. The description will be omitted or simplified, and the technical contents of the two embodiments can also be combined or replaced with each other for application.

The main difference between the shielding structure 10' and the shielding structure 10 is that the annular connecting body 12 (inward extension part 122) and the annular supporting body 13 (transverse part 131) are integrally formed, but the tubular shielding body 11 is manufactured separately. Specifically, the annular connecting body 12 and the annular supporting body 13 can be made of the same material (such as stainless steel with better strength and corrosion resistance), while the tubular shielding body 11 can be made of different materials (such as lighter weight aluminum). Then, the first upright portion 111 of the tubular shielding body 11 and the second upright portion 121 of the annular connecting body 12 are sealed and joined by an electron beam welding layer 14 .

More specifically, please refer to FIG. 7 . The lower edge 111B of the first upright part 111 abuts the upper edge 121A of the second upright part 121 , and then the two are placed in the vacuum chamber of the electron beam welding machine (not shown in the figure). ) within. At this time, the first upright portion 111 and the second upright portion 121 can be placed horizontally, so that the electron beam EB can be aligned with the interface between the lower edge 111B and the upper edge 121A to melt the lower edge 111B and the upper edge 121A. In this way, a circle of welding beads will be formed between the lower edge 111B of the first upright portion 111 and the upper edge 121A of the second upright portion 121 to form the electron beam welding layer 14, so that the two can be hermetically joined to each other.

Thereby, the entire manufacturing process of the shielding structure 10' can be easier, the manufacturing cost is correspondingly lower, and the manufacturing quality is also better (for example, the roundness of the annular support 13 is good).

Next, a method for repairing a shielding structure for physical vapor deposition according to a preferred embodiment of the present invention will be described. This repair method can repair a damaged shielding structure into the same or similar shielding structure 10, 10' of the above embodiment. Therefore, the technical content of the maintenance method and the technical content of the shielding structure 10, 10' can be referenced and applied to each other, and the same parts will be omitted or simplified.

When the shielding structures 10 and 10' are worn due to use or cleaning, usually the annular support body 13 will be severely worn (in traditional shielding structures, the parts corresponding to or similar to the annular support body 13 are also the easiest to was wasted). This loss will affect the roundness and other accuracy of the annular support body 13, thereby affecting the process results of physical vapor deposition.

Therefore, compared with scrapping the entire shielding structure, discarding it and directly purchasing a new product, this new model only repairs the lost annular support 13 while retaining most of the other shielding structures 10 and 10', which can reduce costs and make it more convenient. Contribute to environmental protection.

Specifically, please first refer to the flow chart of the shielding structure maintenance method shown in Figure 8 (the order of the steps shown is not limiting unless explicitly stated or implicitly implied). In step S21, first provide a physical gas The shielding structure used in phase deposition can be a traditional shielding structure, and the following description takes the shielding structure 10 as an example (as shown in FIG. 2 ). The shielding structure 10 includes a used tubular shielding body 11, annular connecting body 12 and annular supporting body 13, some of whose dimensions or accuracy have changed or deteriorated. The used tubular shielding body 11 and the annular connecting body 12 are integrally formed and joined, while the used annular connecting body 12 and the annular supporting body 13 are joined by the electron beam welding layer 14 (or integrally formed).

Next, step S23 is performed to cut and separate the used annular support body 13 from the used annular connecting body 12 (as shown in FIG. 4 ). This can be achieved, for example, by a milling machine, a lathe or a wire cutting machine. Cutting removes less amount or makes the cutting surface flatter. When cutting and separating, it can be cut along the interface between the outer edge 131B of the transverse portion 131 of the original annular support body 13 and the inner edge 122A of the inner extension 122 of the annular connecting body 12 . In other words, the cutting surface of the annular support body 13 and the cutting surface of the annular connecting body 12 caused by cutting and separation are respectively defined as the outer edge 131B and the inner edge 122A.

The inner edge 122A of the inner extension 122 of the annular connector 12 due to cutting may be uneven (slightly inclined or rough), so it can optionally be made flat by grinding, milling or lathe processing. , to facilitate subsequent electron beam welding.

Then step S25 is performed to provide a replacement annular support body 13N. The replacement annular support body 13N is pre-made and the size and accuracy meet the requirements. Generally speaking, the replacement annular support 13N has not been used in the semiconductor manufacturing process (new product), or has been used but has been refurbished (new product). In addition, the provided replacement annular support body 13N can be made of different materials (such as stainless steel) to make the annular support body 13 more durable. Moreover, this step S25 can be performed before step S23, that is, it can be prepared in advance.

Then proceed to step S27, and refer to Figure 4, the used annular connecting body 12 is pressed against the replacement annular supporting body 13N, that is, the inner edge 122A of the inner extension 122 of the annular connecting body 12 ( The cutting surface) is in contact with the outer edge 131B of the transverse portion 131 of the replacement ring-shaped support body 13N, and the two can be kept in contact with each other by a clamping jig.

Finally, step S29 is performed, and referring to FIG. 5 , the electron beam EB is used to form the electron beam welding layer 14 between the used annular connector 12 and the replacement annular support 13N, so that the annular connector 12 and the annular support 13N are connected. The support body 13N is sealingly joined to each other. After the two are sealingly joined, if the electron beam welding layer 14 has an exposed portion, the exposed portion can be selectively ground or polished.

In addition, preferably, the thickness of the replacement annular support body 13N can be greater than the thickness of the used annular connector 12 to increase the structural strength of the annular support body 13N and make it more durable. Moreover, after the electron beam welding layer 14 is formed, if necessary, the annular support body 13N can be further ground to become thinner, so that the surface of the annular support body 13N and the surface of the annular connecting body 12 can be continuous without interruption. Difference.

The flow chart of the method for repairing the shielding structure shown in Figure 8 can also be performed by taking the shielding structure 10' (shown in Figure 6) as an example, as described below (the same or similar parts will be omitted or simplified).

In step S23, the used annular support body 13 and the annular connecting body 12 are cut and separated from the used tubular shielding body 11. When cutting and separating, it can be done along the interface between the lower edge 111B of the first upright portion 111 of the original tubular shielding body 11 and the upper edge 121A of the second upright portion 121 of the annular connecting body 12 . In other words, the cut surface of the tubular shielding body 11 and the cut surface of the annular connecting body 12 caused by cutting and separation are respectively defined as the lower edge 111B and the upper edge 121A. Alternatively, the lower edge 111B of the first upright portion 111 of the tubular shielding body 11 resulting from cutting can be made flat by grinding, milling or lathe processing.

In step S25, a replacement annular support body 13N and an annular connecting body 12N are provided, which may be integrally formed. The integrally formed annular support body 13N and annular connecting body 12N are pre-made or prepared and the size and accuracy meet the requirements, and can be brand new or brand new. In addition, the annular supporting body 13N and the annular connecting body 12N can be made of different materials, and their thickness can be greater than the thickness of the used tubular shielding body 11 .

In step S27, and referring to Figure 7, the used tubular shielding body 11 is pressed against the replacement annular connector 12N, that is, the lower edge 111B of the first upright portion 111 of the tubular shielding body 11 is aligned with the annular connecting body 12N. The upper edges 121A of the second upright portions 121 of the connecting body 12N abut against each other.

In step S29, with continued reference to Figure 7, the electron beam EB is used to form the electron beam welding layer 14 between the used tubular shielding body 11 and the replacement annular connector 12N, so that the tubular shielding body 11 and the annular connector 12N are The 12N phase is hermetically joined. In addition, the annular connecting body 12N and the annular supporting body 13N can be further ground to become thinner, so that the surfaces of the annular connecting body 12N and the annular supporting body 13N and the surface of the tubular shielding body 11 can be continuous without discontinuity.

The shielding structures 10 and 10' obtained through the above repair method can have the same size as new products, but the cost can be lower than the price of new products. The repairer can choose which parts of the shielding structure to replace (eg, only the ring support, or both the ring connector and the ring support). In addition, after the repaired shielding structure has been used several times, the above repair method can be performed again to replace the used annular support body (or annular connector and annular support body). Therefore, compared with the traditional method of replacing a new shielding structure, it will be more cost-effective. In addition, since the maintenance cost is relatively cheap, semiconductor manufacturers can consider increasing the frequency of maintenance of the shielding structure so that the shielding structure can always be maintained in a better condition. condition.

To sum up, the shielding structure provided by the present invention can make the shielding structure easier to manufacture and maintain, reducing the user's cost burden, and is also helpful for the yield or production capacity of the process.

Although the present invention has been described only with respect to the selected embodiments above, various changes, modifications or substitutions are possible without departing from the scope of the invention as defined in the appended patent application, as long as they do not substantially Affects intended operation or functionality. Therefore, the foregoing embodiments are only for illustrative purposes and are not intended to limit the invention. The scope claimed in this application is defined by the patent scope and its equivalents.

10,10’: shielding structure

10A:Axis

11: Tubular shielding body

111:First upright part

111A:Shangyuan

111B: Lower edge

112:Extension Department

113:Through hole

114: Penetration Department

12. 12N: cyclic connector

121:Second upright part

121A: Upper edge

121B: Lower edge

122: Inner extension

122A:Inner edge

13,13N: Annular support

131: Transverse part

131A:Inner edge

131B:Outer edge

132:Shangyan Department

14: Electron beam welding layer

EB: electron beam

20:Physical vapor deposition device

21: Chamber

22: base

23: cover ring

24:Target

30:Substrate

[Fig. 1] is a schematic diagram of a physical vapor deposition device according to a preferred embodiment of the present invention.

[Fig. 2] is a perspective view of a shielding structure for physical vapor deposition according to a preferred embodiment of the present invention.

[Fig. 3] is a front view of the shielding structure shown in Fig. 2.

[Fig. 4] is a cross-sectional view of the shielding structure shown in Fig. 2 (in an exploded state or as a cutting diagram).

[Fig. 5] is a schematic diagram of an electron beam being applied to the shielding structure shown in Fig. 4.

[Fig. 6] is a cross-sectional view (exploded state or cutting diagram) of a shielding structure for physical vapor deposition according to another preferred embodiment of the present invention.

[Fig. 7] is a schematic diagram showing an electron beam being applied to the shielding structure shown in Fig. 6.

[Fig. 8] is a flow chart of a method for repairing a shielding structure for physical vapor deposition according to a preferred embodiment of the present invention.

10:Shading structure

10A:Axis

11: Tubular shielding body

12: cyclic connector

13,13N: Annular support

14: Electron beam welding layer

111:First upright part

112:Extension Department

121:Second upright part

122: Inner extension

131: Transverse part

132:Shangyan Department

EB: electron beam

Claims (13)

A shielding structure for physical vapor deposition, including: a tubular shielding body including a first upright part and an extension part, the extension part extending outward from the first upright part; an annular connecting body including a second upright part and an inwardly extending portion, the second upright portion is disposed under the first upright portion, and the inwardly extending portion extends inwardly from the second upright portion, wherein the height of the second upright portion is smaller than the first upright portion. the height of the upright portion; the annular support body including a transverse portion and an upward extension portion, the transverse portion is disposed within the inward extension portion, and the upward extension portion extends upward from the transverse portion; and an electron beam welding layer, wherein , the first upright part and the second upright part, and/or the inward part and the transverse part, are sealed and joined by the electron beam welding layer. The shielding structure as claimed in claim 1, wherein the first upright part and the second upright part are sealingly joined by the electron beam welding layer, and the inward extension part and the transverse part are connected by Formed in one piece. The shielding structure as claimed in claim 1, wherein the inward portion and the transverse portion are hermetically joined by the electron beam welding layer, and the first upright portion and the second upright portion are sealedly joined together. Formed in one piece. The shielding structure of claim 2 or 3, wherein two of the tubular shielding body, the annular connecting body and the annular supporting body are made of different materials. A shielding structure for physical vapor deposition, including Contains a used tubular shielding body, a used annular connector connected to the used tubular shielding body and disposed under the used tubular shielding body, and a used annular connector disposed on the used annular connector The replacement annular support body and the electron beam welding layer in the The electron beam welding layer is formed between the annular connectors so that the two are hermetically joined. The shielding structure of claim 5, wherein the thickness of the replacement annular support is greater than the thickness of the used annular connector. The shielding structure of claim 6, wherein after forming the electron beam welding layer, the replacement annular support system is further ground to become thinner. The shielding structure according to any one of claims 5 to 7, wherein the replacement annular support body and the used annular connection system are made of different materials. A shielding structure for physical vapor deposition, including a used tubular shield, a replacement annular connector arranged under the used tubular shield, and a replacement annular connector connected and arranged A replacement annular support body and an electron beam welding layer within the replacement annular connector, wherein the replacement annular connector abuts the used tubular shield, and the electron beam is in the replacement The electron beam welding layer is formed between the annular connecting body and the used tubular shielding body so that the two are sealingly joined. The shielding structure as claimed in claim 9, wherein the replacement annular support body and the annular connecting system are integrally formed. The shielding structure of claim 9, wherein the thickness of the replacement annular support body and the annular connecting body is greater than the thickness of the used tubular shielding body. The shielding structure of claim 9, wherein after forming the electron beam welding layer, the replacement annular support and annular connection system are further ground to become thinner. The shielding structure according to any one of claims 9 to 12, wherein the replacement annular support body and annular connection system are made of materials different from the used tubular shielding body.

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